CN1527754A - Ultraviolet laser ablative patterning of microstructures in semiconductors - Google Patents

Ultraviolet laser ablative patterning of microstructures in semiconductors Download PDF

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Publication number
CN1527754A
CN1527754A CNA028044045A CN02804404A CN1527754A CN 1527754 A CN1527754 A CN 1527754A CN A028044045 A CNA028044045 A CN A028044045A CN 02804404 A CN02804404 A CN 02804404A CN 1527754 A CN1527754 A CN 1527754A
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laser system
laser
substrate
output
pedestal
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CN1301178C (en
Inventor
B・W・贝尔德
B·W·贝尔德
沃尔夫
M·J·沃尔夫
哈里斯
R·S·哈里斯
法蒂
K·P·法蒂
麦克尼尔
L－C·邹
T·R·麦克尼尔
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Electro Scientific Industries Inc
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Electro Scientific Industries Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0626—Energy control of the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0869—Devices involving movement of the laser head in at least one axial direction
    • B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
    • B23K26/0884—Devices involving movement of the laser head in at least one axial direction in at least two axial directions in at least in three axial directions, e.g. manipulators, robots
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/52—Ceramics

Abstract

Patterns with feature sizes of less than 50 microns are rapidly formed directly in semiconductors, particularly silicon, using ultraviolet laser ablation. These patterns include very high aspect ratio cylindrical through-hole openings for integrated circuit connections; singulation of processed die contained on semiconductor wafers; and microtab cutting to separate microcircuit workpieces from a parent semiconductor wafer. Laser output pulses (32) from a diode-pumped, Q-switched frequency-tripled Nd:YAG, Nd:YVO4, or Nd:YLF is directed to the workpiece (12) with high speed precision using a compound beam positioner. The optical system produces a Gaussian spot size, or top hat beam profile, of about 10 microns. The pulse energy used for high-speed ablative processing of silicon using this focused spot size is greater than 200 [micro]J per pulse at PRFs greater than 5 kHz and preferably above 15 kHz. The laser pulsewidth measured at the full width half-maximum points is preferably less than 80 ns.

Description

The patterning of the ultraviolet laser ablative of micro-structural in the semiconductor
Related application
Present application for patent is advocated priority according to following two application cases: the 09/803rd, No. 382 U.S. patent application case of the 60/265th, No. 556 U.S. Provisional Application case of application on January 31 calendar year 2001 and application on March 9 calendar year 2001.
Technical field
The invention relates to the method and/or the equipment that form the micro-scale features size with the semiconductor ablation at a high speed, particularly for silicon, it is to use the pulse output of Ultra-Violet Laser.
Background technology
Semi-conductor industry uses multiple technologies to cut apart different electronic components, and these elements often are called as crystal grain (die), and it is to cut apart from semiconductor wafer when making this element.A kind ofly be used for carrying out this commonsense method of cutting apart and be to use diamond cutter.Be used for reducing the Method for Area that is assigned as Cutting Road in the semiconductor wafer and be required when producing useful crystal grain, to obtain more large-area wafer utilization rate, and then increase the crystal grain output of each wafer.Laser technology provides the chance of the Cutting Road size of a this reduction semiconductor wafer cutting.
Concerning those are familiar with the people of this technology, use infrared laser, for example to carry out the silicon laser process be known to Q-switching regulator 1064 nanometer Nd:YAG laser.Yet,, operate in this kind wavelength or during near this wavelength, laser cutting process suffers from significant problem because silicon is weak absorbers in 1064 nanometers.Along wafer surface and on the cutting wall, cut quality and can observe usually and have silicon and deposit caused stained again.
People such as Carlson are the 4th, 541, No. 035 United States Patent (USP), and Anthony is the 4th, 589, describe the pulse of using 1064 nanometers in No. 190 the United States Patent (USP) and export the silicon cell characteristic size manufacturing of being carried out, for example from a kind of ESI model that is incorporated into: acousto-optic formula Q-switching regulator infrared ray (1R) the Nd:YAG laser of 5 laser marking systems.(also can be with reference to the applicating physical magazine of T.R.Anthony in December nineteen eighty-two, 53 volumes, the 9154th.9164 pages " with laser drill and spread made this diode ").People such as Alcorn also illustrate a kind of method with this imaging spectrometer of laser treatment silicon cell system in the 4th, 618, No. 380 United States Patent (USP)s.
People such as Wills are the 5th, 543, in No. 365 the United States Patent (USP), a next laser marking equipment that forms the polysilicon streak in silicon wafer of pulse output that uses 1064 nanometers is described, for example export c alternatively with the pulse with the Nd:YAG laser that surpasses 4 nanosecond pulse width, the frequency multiplication wavelength that they mention 532 nanometers can be used.
In " producing the silicon through hole that is used in the 3D interconnection line " (international electronic manufacturing technology seminar of IEEE/CHMT in 1992) this piece article with quasi-molecule contrast Nd:YAG laser, people such as Lee have reported the Nd:YAG laser that uses 1064 nanometers and 532 nano wave lengths and have produced a through hole that penetrates silicon wafer surface, to reach the production purpose of polycrystalline sheet module.Lee reported with 1064 nanometer lasers in silicon wafer during the Drilling through hole, in case when reaching the degree of depth of an approval, melted material just condenses on the wall on the hole continually.The tangible silicon of this kind deposits and makes that these holes are improper and be further processed.Lee has reported the quality that the two boring procedures that use 1064 nanometers improve hole.Lee has illustrated in perforation procedure the application of the 532 nanometer double frequency pulse laser of being exported from lamp pumping Q-switching regulator Nd:YAG laser, this perforation procedure is to use the relay lens for the biasing of incident laser light beam, with the hole of one 4 mil (the about 100 micron) diameter of cutting in silicon.He has reported the pulse recurrence frequency at 3 KHzs, when having the pulse width of 70 nanoseconds, and each pulse 833 little Jiao's processing parameter.On the wall of laser drill through hole and silicon on every side deposit still again and be observed, and a kind of chemically etching process is used for cleaning this hole.
Lee has further reported the method for holing at a kind of PRK of 248 nano wave lengths of using in silicon.He has reported the hole of the side of the dead smooth that obtains when using high pulse energy.He has reported and has used the burnt energy of each pulse 290 milli to get out the hole that penetrates silicon wafer when 250 hertz of pulse recurrence frequencies and the big or small focal spot of 5 mils (about 125 microns) in 30 seconds.He has compared the 3 seconds required drilling times of 532 nanometer Nd:YAG puncturing techniques that use him.Lee advises one via projective technique, reduces the method for silicon hole boring required time with 248 nanometer PRKs.As those people that are familiar with known item technology cognition is arrived, use each pattern of the hole that this technology forms for need, this technology depends on a kind of suitable aperture shade.
At United States Patent (USP) the 5th, 870, in No. 421, Dahm discusses the problem of using near infrared ray laser to carry out the silicon wafer cutting.He mentions when using near infrared ray laser, and the main cause of the bad cutting quality of deposition generation is to come from the laser pulse that uses width to surpass about 1 nanosecond to produce again.Dahm mentions the very dark absorption degree of depth of using the near infrared ray laser with the short pulse width that is less than about 1 nanosecond to solve near infrared ray wavelength in the silicon, and it can produce the surface plasma as the high absorption layer when being described in the pulse width of this weak point.Dahm also mentions near infrared ray laser, 1064 nanometer Nd:YAG laser for example, be used among the high-speed application because they have generation than the more powerful ability of Ultra-Violet Laser, he discusses Ultra-Violet Laser and can't generate the silicon that enough power carries out at a high speed and handle.
People such as Owen are at United States Patent (USP) the 5th, 593, in No. 606, the use advantage of Ultra-Violet Laser system have been described, it is that the laser output pulse that produces in the parameter with advantage forms the two-layer at least through hole that penetrates in the sandwich type element.These parameters comprise usually: have the sequential pulse be shorter than 100 nanosecond width non-quasi-molecule output pulse, have spot diameter less than 100 microns light point area and in repetition rate during greater than 200 hertz, the mean intensity or the width of cloth greater than 100 milliwatts in whole light point area shine.
At United States Patent (USP) the 5th, 841, in No. 099, people such as Owen with similar parameter described above in change the output of Ultra-Violet Laser, obtain different power densities when processing different materials with box lunch.He they change intensity to change the laser PRF so that coup impact workpiece laser spot energy density and/or change the size of luminous point.
At United States Patent (USP) the 5th, 751, in No. 585, people such as Cutler illustrate a kind of high speed, and pinpoint accuracy multiple platform navigation system is used for carrying out the location accurately and fast of multiple instrument, for example relevant with the target above workpiece laser beam.They use a multiple speed fixture system, and this multiple speed fixture system is to handle workpiece target positioning instruction and they are converted to reaching the instruction of quick positioner at a slow speed.These locators are to move according to the response of a string navigation data, and it might not stop.In one embodiment, this kind technology can make the miniature processing of laser of the tiny characteristic size pattern of whole large-scale workpiece carry out, and allows the production capacity of the miniature processing component of laser to increase by this.
Summary of the invention
The purpose of this invention is to provide a kind of modification method that uses laser to produce little feature in the semiconductor, these semiconductors comprise that silicon, arsenicization transfers (GaAs), carborundum (SiC silicon), silicon nitride (SiN), and/or germanium: silicon, and/or be included in the semiconductor processes by the various semiconductors of sequence ground processing, these processes are including but not limited to photoetching and etching, for those are familiar with the people of this technology, also comprise those, comprise the extra play that produces useful electronics and optoelectronic circuit on the semiconductor wafer on semiconductor chip.
Another object of the present invention provides a kind of method of using the non-Excimer UV laser of high confidence level, and the non-Excimer UV laser of this high confidence level can be exported with the high impulse energy at high pulse repetition frequency and move.
The invention provides a kind ofly in the semiconductor workpiece that uses Ultra-Violet Laser to ablate, form the pattern that has less than 50 micron feature sizes fast and directly.Composite light beam locator is used at the workpiece place the focusing output of non-Excimer UV laser location fast, every pulse output emission high-energy that this Ultra-Violet Laser can high pulse repetition frequency.These patterns can comprise: form the cylinder open of the high the ratio of width to height that for example is used in the integrated circuit connection, as through hole or blind hole (blind vias); The curve or the straight line that are contained in the crystal grain of the processing on the silicon wafer are cut apart (singulation); Miniature journey word cutting separates from the parent crystal sheet with the microcircuit that will form in semiconductor workpiece; Form optical waveguide, as the curve in array waveguide grating (AWGS) or the microelectromechanical systems (MEMS) or the formation of linear feature; And will aim at, identify, or other mark line are in wafer surface.
Utilization of the present invention is shorter than the optical maser wavelength of 390 nanometers because its silicon optical absorption be number than at United States Patent (USP) the 4th, 541,035,4,589, No. 190 and 5,543,1064 nano wave lengths that use in No. 365 be that number is big 1000 times.Q-switching regulator treble frequency Nd:YAG, a Nd:YVO 4, or ND:YLF diode pumping (diode-pumped) the laser preferable source that provides ultraviolet ray to ablate output.The optical system of laser produces Gauss's luminous point of about 10 microns sizes.Alternatively, can use a kind of optical system that produces the apical cap type beam shape.The example pulse energy of using this kind focal spot to carry out silicon ablation processes at a high speed is greater than 5 KHzs and under preferably greater than 15 KHzs, every pulse is greater than 200 little Jiao in pulse recurrence frequency.The full width at half maximum point measurement to laser pulse width be preferably less than for 80 nanoseconds.
Use the advantage of ultraviolet wavelength to be, it has generation significantly less than the ability of the luminous point size that produces with the longer wavelength source.The ability of the little spot definition of this generation makes the characteristic size that can produce micro-dimension in silicon.Simultaneously, for the fixed spots size that can reach with traditional Gauss's focusing technology, because the bigger depth of focus that provides in ultraviolet wavelength, short wavelength can generate the feature of the ratio of width to height with improvement.
The present invention also is used for the almost completely unreflecting material and the novel manufacturing technology of workpiece support structure by use, also provide and be used for reducing the damage of handled semiconductor workpiece or stained several method, damage or stained be from workpiece support structure, for example the spurious reflections that produces from the ultraviolet processing beam of wafer base (waferchuck) generates.
Other purpose of the present invention and advantage will be easy to understand after graphic explanation of the detailed description of following preferred embodiment and reference.
Description of drawings
Fig. 1 shows that the optical absorption of silicon is the figure of number as function of wavelength.
Fig. 2 shows that the optical absorption of GaAs is the figure of number as function of wavelength.
Fig. 3 is the preferable laser system rough schematic view that is used for according to the present invention in the micro structured pattern of semiconductor medium ultraviolet laser ablation.
Fig. 4 is used at semiconductor another preferable laser system rough schematic view with Ultra-Violet Laser ablation formation micro structured pattern.
Fig. 5 is an optionally rough schematic view of image optical module, and it can be used for forming with the Ultra-Violet Laser ablation in the semiconductor laser system of micro structured pattern.
Fig. 6 is a pulsed laser energy that uses when enforcement is of the present invention and the characteristic relation figure between the pulse recurrence frequency.
Fig. 7 is the representative illustration of the ultraviolet ray ablation pattern of a cylinder open in silicon.
Fig. 8 is the representative illustration of the ultraviolet ray ablation pattern of a groove in silicon.
Fig. 9 is a reduced graph that is used for growing the example fragment cutting profile of cutting in semi-conducting material.
Figure 10 is a reduced graph that is used for growing the substituting fragment cutting profile of cutting in semi-conducting material.
Figure 11 is the representative illustration of the ultraviolet ray ablation pattern of a MEMS element in semiconductor wafer.
Figure 12 is a ultraviolet ray ablation pattern representative illustration that is manufactured on the AWG element on the semiconductor wafer.
Figure 13 is the pedestal representative illustration of a ultraviolet (uv) transmission, is placed at semiconductor workpiece to be used to use ultraviolet ablation patterning method to carry out breakthrough process on this pedestal.
The specific embodiment
Fig. 1 shows that the optical absorption of silicon is the figure of number as the function of wavelength.With reference to figure 1, silicon represents very zooming optical absorption in ultraviolet wavelength.Advantage of the present invention is to utilize the optical maser wavelength that is shorter than 390 nanometers, and the absorption usefulness of utilizing silicon to increase in the ultraviolet ray silicon of ablating effectively, and thereby directly forms multiple useful pattern or feature in silicon.Relatively compare with the feature that use 532 nanometers of being taught in the technology formerly or the pulse of 1064 nanometers output form, this absorption behavior promotes silicon in ultraviolet ablative removal consumingly, and reduces its heat-affected zone in a large number.
Fig. 2 shows that the optical absorption of GaAs is the function of number as wavelength.With reference to figure 2, GaAs shows a very zooming optical absorption in ultraviolet wavelength.GaAs and silicon are that number is quite approaching in the absorption of 355 nanometers.GaAs for example is a key material in diode laser and the detector at optoelectronic component.
Fig. 3 and Fig. 4 show the substituting preferred embodiment of each laser processing system 10a and 10b (being commonly referred to as 10), its use has the composite light beam navigation system 40 of wafer base assembly 140, and this assembly can be used for according to the Ultra-Violet Laser ablation micro structured pattern in semiconductor workpiece 12 of the present invention.With reference to figure 3 and Fig. 4, the preferred embodiment of laser system 10 comprises solid-state (SS) Ultra-Violet Laser 14 of a Q-switching regulator diode pumping (DP), and it preferably comprises a kind of solid-state laser material such as Nd:YAG, ND:YLP or Nd:YVO 4Laser 14 preferably can be provided in wavelength and be for example 355 nanometers (frequency tripling Nd:YAG), 266 nanometers (quadruple Nd:YAG), or 213 nanometers (five frequency multiplication Nd:YAG) and mainly have TEM 00One or a plurality of laser pulse Ultra-Violet Laser output 16 that produces in the harmonic wave mode of space mode form.
Though Gauss's form can be used for illustrating the width of cloth photograph of laser output 16, can not launch and have M yet the people who has the knack of this technology will recognize most laser 14 2The perfect Gauss of=1 value exports 16.For convenience's sake, this term of Gauss is used to comprise M here 2Less than or equal about form at 1.5 o'clock, even M 2Value be preferable less than 1.3 or 1.2.
In a preferred embodiment, laser 14 comprises one greatly about Q-switching regulator, three times of Nd:YAG laser of the model 210-VO6 of 355 nano-manipulations, and it can obtained from Lightwave electronics corporation on the market.This kind laser has used in micro through-hole hole-drilling system ESI pattern 2700, and it can be obtained in the Electro Scientific Ind., Inc. in Oregon Portland city.In alternate embodiment, a kind of can be at Q-switching regulator, the frequency tripling Nd:YAG laser of the Lightwave of about 355 nano-manipulations pattern 210-VO9, obtaining when high pulse repetition frequency (PRF), each pulse has high-energy.The laser that the people who knows present technique will figure out other can be used and other wavelength can obtain from the laser material that other is listed.Though laser cavity arrangement, harmonic wave produce, the operation of Q-switching regulator, and navigation system all is as well known to those skilled in the art, and the specific detail of some above assemblies will illustrate in the discussion of preferred embodiment.
Ultraviolet laser output 16 is optionally by several known amplifications and/or collimating optical system 18, propagate along an optical path 20, then by beam position system 30 guiding, laser system is exported pulse 32 shoot and want the laser target position 34 shot above the workpiece 12.Beam position system 30 preferably comprises a transmission platform locator, it preferably uses at least two horizontal platforms 36 and 38, support for example X, Y, and/or several positioning mirrors 42 and 44 such as Z, and allow fast moving between the several targets position 34 on the identical or different workpiece 12
In a preferred embodiment, the transmission platform locator is a branch axle system, wherein, usually the Y platform 36 that moves along track 46 by linear motor supports and travelling workpiece 12, and the X platform 38 that the typical case moves along track 48 by linear motor is to support and move a quick positioner 50 and relevant (a plurality of) focusing lens.Z dimension between X platform 38 and Y platform 36 also is adjustable.Positioning mirror 42 and 44 will be by any turning alignment optical path 20 between laser 14 and the quick positioner 50, and it is along optical path 20 location.For instance, quick positioner 50 can use high-resolution line style motor or a pair of galvanometer mirror, and it can based on the test that provides or design data makes single or the operation of processing repeatedly generation effect.Platform 36,38 and locator 50 can be controlled, then with independence or coordinated mode, with in response to precasting or not precasting data and move together.
Quick positioner 50 preferably also comprises a vision system, and they can be in alignment with at workpiece 12 lip-deep one or a plurality of fids (fiducial).Beam position system 30 can use traditional vision or light beam effect alignment system, and these systems are via object lens 36 or separate camera with one and come work in the mode from axle, and these are that those skilled in the art scholar is known.In one embodiment, utilize the HRVX vision box of the use Freedom library software in the navigation system 30 that Electro Scient Ind Inc sells, carry out the aligning between laser system 10 and the target position 34 above the workpiece 12.Other alignment system that is suitable for is being obtainable on the market.Alignment system preferably uses on the bright visual field, the axle illumination, particularly for the workpiece of minute surface reflection as repeatedly type or polishing type wafer.
In addition, beam position system 30 preferably also uses contactless small displacement sensing device to decide because pitching, the deflection of platform 36 and 38, or the Abbe error (Abbeerror) that causes of lift-over, these are to can't help the shaft position indicator, and for example linear-scale encoder or laser interferometer are indicated.Abbe error correction system can be calibrated at accurate normative reference, and therefore this calibration only depends on the absolute accuracy that the very little reading of experiencing in the sensor changes rather than depend on sensor reading.This Abbe error correction system is in July 19 calendar year 2001, the disclosed WO01/52004A1 number world was open and in October 18 calendar year 2001, disclosed 2001-0029674A1 number open middle detailed description the in detail of the U.S., the relevant part that the corresponding U.S. Patent application of Cutler is disclosed for the 09/755th, No. 950 is come combination as reference here.
The navigation system 30 of a lot of different types is that to know the personage of present technique known, and the embodiment of some navigation systems 30 describes in detail in No. the 5th, 751,585, people's such as Cutler United States Patent (USP).A kind of micro through-hole hole-drilling system ESI model 5320 that can obtain from the Electro Scient Ind Inc in Oregon Portland city is preferable realizations of navigation system 30, and its resin cladding copper that has been used in the electronics industry encapsulates in the laser drill.27xx, 43xx, 44xx that other preferable navigation system is for example made in Oregon Portland city Electro Scient Ind Inc, or 53xx model sequence also can be used.Using the X-Y linear motor to come travelling workpiece 12 and use X-Y platform to come some systems of mobile scan lens is the navigation system with production cost efficient (cost effective) for growing straight cuts.Those skilled in the art scholar also will figure out the system that carries out the workpiece location with single X-Y platform, can alternatively use, and it is to locate with a fixing positioning of beam (beam position) and/or fixed galvanometer.Those skilled in the art can be by sequencing to utilize the path file to this system with cognition, path file (pathfile) will be in high-speed down dynamically with related art ultraviolet laser systems output pulse 32 location that focus on, to produce multiple useful pattern, it can be periodic or acyclic.Those skilled in the art also will recognize, this ability have more advantage and surmounted Lee dispose the suggestion that is produced on through hole in the silicon via projection imaging.
A kind of optionally laser power control 52, for example the dull and stereotyped polarizer of half-wave can be located along optical path 20.In addition, one or more beam detection assembly 54, for example photodiode can be the downstream of laser power control 52, for example aims at the positioning mirror 44 that is suitable for the wavelength part transmission of laser output 16.Beam detection assembly 54 preferably is communicated with light beam diagnosis electronic building brick, and this electronic building brick transmits signal to revise the effect of laser power control 54.
With reference to figure 4, laser system 10b preferably uses at least two laser 14a and 14b, their emissions each other laser output 16a and 16b, and these outputs are linear polarizations at horizontal direction, and, propagate towards reflection subassembly 42a and 42b respectively respectively along optical path 20a and 20b.One optionally flat plate 56 can place along optical path 20b.Reflection subassembly 42a is the light beam colligator of a polarization sensitive preferably, and places in conjunction with laser output 16a and 16b to propagate along common optical path 20 along two optical path 20a and 20b.
Laser 14a and 14b can be the laser of identical or different kenels, and can produce and have identical or different wavelength of laser output 16a and 16b.For example, laser output 16a can be the wavelength with about 266 nanometers, and laser output 16b can be the wavelength with about 355 nanometers.The personage who knows present technique will recognize that laser 14a and 14b can be arranged side by side or one on another, and both are attached to transmission platform 36 or 38 on one of them.Laser system 10b has the ability of the laser output pulse 32b that produces very high energies.The peculiar advantage of a configuration that in Fig. 4, shows be produce shooting working surface, have every pulse increase energy in conjunction with laser output 32, it is difficult to produce in existing single laser head.It is to have advantage especially that this every pulse increase energy is used for ablating in thick silicon wafer very dark groove or very dark cylinder open.
Although laser system output pulse 32 has rounded form basically, yet the improvement of beam shape quality can be reached with a kind of optionally image optical module 62, the false shadow of unwanted therein light beam, for example residual astigmatism or oval or other shape facility is to filter in the space mode.With reference to figure 5, image optical module 62 preferably comprises an optical module 64, lens 66, and aperture mask 68 that is placed on or approaches the beam waist of optical module 64 generations, to stop any undesired light beam accessory lobes and peripheral part, an accurate shape luminous point form is to image on working surface substantially as a result.In preferred embodiment, optical module 64 is condenser lenses, and lens 66 are collimating mirror group lens, to increase the configurational elasticity of laser system 48.
The size that changes aperture can be controlled the peripheral vividness of luminous point form to produce less, distinct peripheral intensity form, the degree of accuracy that so can improve aligning.In addition, with this configuration, the shape of aperture can be accurate circular or change into rectangle, ellipse, or other can be parallel or be in vertical alignment with the non-circular shape of a cut direction.The aperture of shielding 68 can optionally outwards scatter at its light emitting side.In image optical module 62, shielding 68 can contain the material of ultraviolet reflection or ultraviolet radiation absorption, but, give coating with the high ultraviolet reflection coating of multilayer or with other ultraviolet photoresistance coating preferably with dielectric material for example ultraviolet ray level fused quartz or sapphire.Those skilled in the art scholar will figure out aperture mask 68 and can not use optical module 64 and use in 66 o'clock.
In the preferred embodiment that substitutes, optical module 64 comprises one or a plurality of beam-shaping assembly, it is one to have the pulse that is close to uniformly that " apical cap type " is shaped (and focusing) according to the laser pulse of form that its conversion has original Gauss's width of cloth, and the super Gauss's width of cloth that perhaps particularly is adjacent to optical module 64 downstream aperture mask 68 is according to form.This beam-shaping assembly can comprise non-spherical optics or diffraction optical assembly.In a preferred embodiment, lens 66 comprise the image optics assembly that is used to control beam size and disperses.Those skilled in the art scholar will figure out single imaging len assembly or the multiple lens assembly can be used.Those skilled in the art scholar also will figure out forming laser output and can use when not using aperture mask 68.
In a preferred embodiment, the forming assembly of light beam comprises diffraction optical assembly (DOE), and it can carry out complicated beam-shaping with high-effect and high accuracy.The beam-shaping assembly is not only changed Gauss's width of cloth becomes one near the width of cloth is according to form uniformly according to form, and they also will be shaped to export and focus on a decidable or specific luminous point size.Though single component DOE is preferable, but those skilled in the art scholar will figure out DOE can be comprised by people such as Dickey at United States Patent (USP) the 5th, 864, the multiple separation assembly such as phase disk and the transition components that disclose for No. 430, it also discloses the technology that is used for as the design DOE of beam-shaping purpose.Shaping discussed above and imaging technique disclose in WO00/73013 number in the world of distribution on December 7th, 2000 detailed description.Apply on May 26th, 2000, the relevant part that the corresponding U.S. Patent application that is proposed by people such as Dunsky is disclosed for the 09/580th, No. 396 is incorporated reference at this.
For the purpose that the elasticity that reaches the dynamic range that each pulse energy is provided increases, a quick response amplitude controlling mechanism, the pulse energy that for example a kind of acousto-optic formula modulator or electrical-optical modulator are used to modulate continuous impulse.Alternatively, or combine with quick response amplitude controlling mechanism, pulse recurrence frequency can increase or reduce the change with the pulse energy that produces continuous impulse.Fig. 6 is illustrated in and carries out when of the present invention characteristic relation between the pulse energy of the laser 14 of use and the pulse recurrence frequency (PRF).As shown in Figure 6, the pulse energy greater than 200 little Jiao can obtain from model 210-V06.In addition, also shown, be used for the characteristic relation between pulse energy and pulse recurrence frequency of substituting laser such as Lightwave210-VO9L and Lightwave210-V09H.One of skill in the art will appreciate that Fig. 6 is exemplary and the alternate embodiment of laser system 10 will be created in characteristic relations different between pulse energy and the pulse recurrence frequency to the main points of explanation.
The performance characteristic of related art ultraviolet laser systems 10 described above can be used in semiconductor ablation mode, and particularly for silicon, forms the micro-scale characteristic size at high speed.These characteristic sizes comprise, and do not penetrate or high the ratio of width to height cylinder open 100 of partial penetration silicon wafer or other silicon workpiece 12 but be not only limited to; The groove of the complex geometry form that formation penetrates or partly penetrates is to reach the cut-out purpose of handling crystal grain at silicon wafer or above the silicon workpiece 12; Forming fine protruding feature size separates from the parent crystal sheet with the microcircuit that will form in silicon; The formation of characteristic size and/or cut-out above the AWG; And the formation of characteristic size in MEMS.In addition, the present invention promotes not have characteristic size that remarkable melt-edge forms, do not have remarkable slag to form and does not have notable feature size edge to peel off the characteristic size of formation.
Fig. 7 is the representative illustration of a columniform opening 100, and it is formed by ultraviolet ray ablation pattern in silicon workpiece 12.This workpiece can be for example to have the intrinsic silicon substrate 70 of 500 micron thickness, its silicon dioxide passivation layer covering with 0.5 micron thickness (not demonstration).It should be appreciated by those skilled in the art that the thickness of silicon workpiece and the thickness of passivation layer can change.
The target position 34 of location, the position by in the focal plane of laser system 10 silicon workpiece 12 preferably, and a series of laser system output pulse 32 is guided in target position 34 above the silicon workpiece 12, with columniform opening 100 patternings.In this embodiment, guiding laser system 10 is in the centre of form target position 34 that X and Y direction move 12 to computer programings of silicon workpiece, and this position is the precalculated position of cylinder open 100.Each of continuous laser system output pulse 32 is incided above the centre of form target position 34 of this sequencing.
The ablation patterning that carries out with continuous overlapping pulses, be called the punching of the cylinder open 100 of silicon workpiece here, in the preferred range of the combined treatment parameter that comprises the energy of each pulse, pulse recurrence frequency (PRF) and focal spot size, for the quick punching of useful cylinder open 100 is beneficial especially.
In punch process, when workpiece 12 was fixed on X and Y-axis position, continuous laser system output pulse 32 was incided respectively above the centre of form target position 34 of sequencing.Ablation patterning process for the silicon of this example, the preferable energy range of each pulse approximately is little Jiao of 100 little Jiao to 1500, reasonablely be, the scope of each pulse energy is from little Jiao of about 200 little Jiao to 1000, be more preferably little Jiao, preferably approximately surpass 360 little Jiao from about 300 little Jiao to 800.Preferable range of pulse repetition frequency greatly about 5 KHzs between 100 KHzs, and be more preferably, the scope of pulse recurrence frequency from about 7 KHzs to 50 KHzs, and preferably, range of pulse repetition frequency from about 10 KHzs to 30 KHzs.The magnitude range of preferable focal spot approximately be 1 micron to 25 microns, be more preferably, scope is from about 3 microns to 20 a microns focal spot size, and preferably, the focal spot size is from about 8 microns to 15 microns.Those skilled in the art arrives cognition, as is presented at laser activity among Fig. 6 can obtain each pulse in pulse recurrence frequency optimum range as explained above output energy.Forward actual conditions to, cause the output of 100 cylinder open of per second with the sequencing ESI model 2700 of optimum process parameter running, wherein each columniform opening is 35 microns at the diameter that penetrates punching of 750 micron thickness silicon wafer workpiece 12.
In another embodiment, the Z-height of laser focus position is moved simultaneously in the mode that meets each follow-up laser system output pulse 32, laser is focused in the silicon workpiece 12 in the darker continuously position, by this focal spot is maintained and excess silicon surface more in the consistent location.
In a preferred embodiment, cylinder open 100 penetrates the whole thickness 102 of workpiece 12 fully, and it is to use greater than 300 little joules (μ J), finishes with the output pulse energy that about 100 continuous laser systems are exported the laser 14 of pulses 32.Laser system output pulse 32 is with the focal spot size (l/e of about 12 micron diameters 2) incide on the working surface.The cylinder open 100 of Chan Shenging has about 20 microns upper surface open diameter (d usually in this embodiment t) 104 and about 13 microns outlet diameter (d b) 106, therefore produced the ratio of width to height of about 30:1 and with this through hole cylinder open of 0.4 ° the opening angle that is tapered.
Those skilled in the art will further figure out the quantity that produces the accurate energy value of each pulse, focal spot size and the pulse of 100 palpuses of high-quality cylinder open that penetrate silicon effectively, can be along with the thickness 102 of silicon workpiece 12, relative thickness, tectal composition and change, wherein silica is an example, and also according to using accurate ultraviolet wavelength to decide.For example, in order to produce through hole cylinder open 100 in silicon, with as the position of surface pattern integrated circuit on the silicon crystal grain to the direct conductive interconnection circuit of printed circuit, this silicon can be for example to have only 50 microns thickness.In this example, use ten pulses approximately having only seldom to scan to produce think through hole cylinder open 100.One of skill in the art will appreciate that the columniform opening of the whole thickness 102 of incomplete penetration silicon, can select to produce via above-mentioned correct parameter.
One of skill in the art will appreciate that this cylinder open 100 with the high the ratio of width to height of passing silicon and very little bevel angle, is to have very much advantage for Electronic Packaging and interconnection applications.In addition, one or more these small through hole cylinder open 100 of multigroup can be placed on top near workpiece 12, circuit or crystal grain periphery, or among mark, section or Cutting Road or their crosspoint, make the back of workpiece 12 or base can be accurately in alignment with the characteristic size on top.This aligning promotes the back for example to handle laser labelling or cutting to improve processing speed or quality.With in front and/or the wafer slice or the cutting technique at the back side among following patent case, more gone through: the 09/803rd of application on March 9 calendar year 2001, No. 382, title is " for example cutting of the ultraviolet laser of the target frangible, high melt temperature of pottery or glass or form are revised " U.S. Patent application, and June 28 calendar year 2001 application the 60/301st, No. 701, title is the U.S. Provisional Patent Application of " having the wafer cutting of surface component layer or the multiple step laser treatment of boring ".
Fig. 8 is the ultraviolet ray ablation patterning representative icon of a groove 110 in the silicon workpiece 12.The patterning of groove 110 is preferably by being positioned at silicon workpiece 12 on the focal plane of laser system 10, and, a succession of overlapping in succession laser system is exported pulse 32 direct on the silicon workpiece 12 by when laser orientation system 30 during along the X-of workpiece 12 and/or Y-axle travelling workpiece 12.
For the ablation patterning process that in silicon, forms groove, the preferable energy range of each pulse approximately is between little Jiao of 100 little Jiao to 1500, and preferably, the little burnt scope of the energy of each pulse about 200 little Jiao to 1000 is more preferably from little Jiao of about 300 little Jiao to 800 and preferably above about 360 little Jiao.Preferable range of pulse repetition frequency approximately is 5 KHzs in 100 KHzs, and is more preferably, and range of pulse repetition frequency from about 7 KHzs to 50 KHzs, and best is, from about 10 KHzs to 30 KHzs.Preferable focal spot magnitude range approximately is from 1 micron to 25 microns, and is more preferably, and the focal spot magnitude range is from about 3 microns to 20 microns, and best is, from about 8 microns to 15 microns.This preferable very range of small be about 0.1 micron to 10 microns, be preferably, very little size range is to about 0.3 micron to 5 microns, and preferably very little of about 0.5 micron to 3 microns.This very little size can be by the laser beam navigation system one or two platform speed are controlled and are adjusted and adjust by the mode of coordinating translational speed and PRF and Laser emission.
In a preferred embodiment, by using about 360 little burnt pulse energy outputs from laser 14, and with the 1 micron very little size (bite size) of platform speed on 180 roads (passes) inherent workpiece 12 of 10 mm/second, linear channel 110 is penetrated the intrinsic silicon of 750 micron thickness that are coated with 2.0 micron silica passivation layers by cutting fully.These laser pulses are with the focal spot size (l/e of 12 microns of diameters 2) be incident on this working surface.Those skilled in the art is with the different pattern of cognition to various different geometric shapes, including but not limited to, the geometric shape of square, rectangle, ellipse, spirality and/or combination, can via laser system 10 employed tool path Documentorizations and during handling the navigation system 30 along X and Y-axle location silicon workpiece 12 produce.As for laser cutting, beam position system 30 is preferably in alignment with known typical cutting machine cutting or the pattern on other datum mark or the wafer surface.If this wafer is mechanically by indentation, then preferably overcome the tolerance limit degree and the alignment error of cutting machine to aim at the cut edge.
Laser cutting is destroyed less material (less than 50 microns wide and preferably less than 25 microns wide otch) significantly than machine cuts (about 300 microns Cutting Road and about 150 microns cutting path), therefore the assembly on wafer can be made in more close mode, allows more assembly to produce on each wafer.Therefore, spacing and the spacing between assembly between laser cutting process will be listed as are reduced to minimum.
Machine cuts remove the assembly manufacturing that also can simplify in the workpiece 10.Particularly, machine cuts can distribute significant mechanical stress to assembly so that they break away from from their carrier.Lose for fear of row, the assembly manufacturing can be used strong stalemate agent or epoxides between row and carrier.Full laser process has reduced significantly and has been used for row are fixed on the requirement of mechanical strength of the stalemate agent above the carrier.Therefore, laser cutting just need not used strong stalemate agent or the epoxides that fixedly is listed as carrier and need not use and remove their required violent chemicals.On the contrary, stalemate agent can select to slow down and get loose, and for example reduces the time that gets loose and minimizing and is exposed in the potential aggressive chemistry medicine, and for the biddability of UV laser process, reduce the risk of assembly damage in large quantities, also therefore improves output.
It is crooked that the section of laser row reduces row, because laser dicing can not apply the mechanical pressure so many as the machinery section.Yet, be significantly if row bending or other Lieque fall into, these row can remedy these defectives with laser stripping and slicing (and section again), and need not be concerned about that key component is used for doing the required assembly alignment of mechanical stripping and slicing between row.For convenience's sake, (penetrating) cut this term and can be used for comprising section (common relevant with the wafer column split) widely or cut (often with relevant from the isolation of wafer row bulk-breaking), and cuts into slices and cut and can be used in interchangeably in the content of the present invention.
Because navigation system 30 can aligned through holes 100 or datum mark, so laser system 10 can be handled each row and/or each assembly independently.For diagonal, laser spot can in position be carried out the transverse cuts across diagonal, this appropriate location is for the outward flange of assembly, and it has platform and/or light beam transmission between each cutting, the rectangle of wanting with generation or the waveform patterns of curve.Therefore, laser cutting can compensate the fixing defective of row and perhaps can save the whole row assembly that machine cuts is damaged.
By long cutting path is divided into short fragment, can improve the output that the ultraviolet laser cutting penetrates silicon and analog material.For example, for thicker silicon penetrate cutting or groove cutting, these fragments preferably from about 10 microns to 1 millimeter to, be more preferably from about 100 microns to 1000 microns, and preferably from about 200 microns to 500 microns.Laser beam be in one first short-movie section with a pre-determined number by scanning, be moved then and among one second short-movie section with a pre-determined number by scanning.Overlapping quantity and the kenel that can be controlled so that groove is filled up of this very little size, fragment size and fragment minimizes.
Fig. 9 depicts the reduced representation mode of an example fragment cutting form 112a.With reference to figure 9, cutting form 112a is shown, and for convenience, it has path cut direction from left to right and has the separation cuts fragment 116k that forms from right to left 1-116r 3(being commonly referred to as cutting fragment 116).Though cutting fragment 116k 1-116r 3Among Fig. 9, describe in a parallel manner for convenience, but cutting fragment 116k 1-116r 3Be actually same online.Fig. 9 depicts multiple set of segments 114a, its each comprise an initial fragment 116k and the multiple overlapping fragments of growth gradually 116m-116r, it is preferably alphabetically handled.Preferably, each set 114a was processed to selected intermediate depth or penetrated cutting fully before next one set is processed.Though each set 114a has only 5 overlapping fragmentses to be shown, but those skilled in the art scholar will figure out the overlapping fragments 116 of the bigger quantity of reality and can be used, particularly when needs cooperate target material thickness, can increase small incremental length.Those skilled in the art scholar also will understand take office what or all use fragments 116 among cutting form 112a can be processed at both direction, rather than as the single direction of Fig. 9 demonstration.
Figure 10 depicts the reduced representation mode of a kind of example fragment cutting form 112b, and it is more or less similar in appearance to form 112a.With reference to Figure 10, form 112b and form 112a are as beginning with same clip set 114.Yet, set of segments 114b omit fragment 116k and little by little with in advance processed set of segments reach 60% overlapping.In the example of this kind embodiment, fragment 116k 1With 30 times by cutting and have 200 microns length.Then, fragment 116m 1(200 microns add fragment 116k with the length of cutting and having 240 microns for 6 times by (30 times pass through 1/5) 1 Length 1/5).Then, fragment 116n 1With 6 times by cutting and have 280 microns length (200 microns add fragment 116k 1Length 2/5).This kind sequence is continued to be done up to set of segments 114b.This kind example can represent the cutting speed that is greater than or equal to 8.5 centimeters/minute.
The part that scans again that monitoring in real time also can be used to finish the cutting path of cutting reduces.In addition, the polarised direction of laser beam can be interrelated with further raising production with cut direction.These fragment cutting techniques the 60/297th, No. 218 of June 8 calendar year 2001 application and title for " section of laser fragment or cutting " and U.S. Provisional Patent Application in gone through.
The Another application of this ultraviolet ablation patterning method is to be used for producing MEMS (MEMS) assembly 120.Figure 11 is the representative diagram of the ultraviolet ray ablation patterning of a MEMS assembly 120.Among a preferred embodiment, be to use top illustrated method to make MEMS assembly 120 patternings, in silicon, to produce groove 122a, 122b, 122c, 122d and 122e (being commonly referred to as groove 122).Those skilled in the art scholar will figure out via the X of laser orientation system 30 and/or the computer control of Y-axis, this guided laser system output pulse 32 can be guided working surface, makes overlapping pulses produce a pattern of expressing any complex curve geometric shape.The ability of the ultraviolet ablation patterning method of this combination can be used to be created in the geometrical pattern of complex curve in the silicon, and its effective production for multiple AWG assembly 120 is of great use.
The Another application of this ultraviolet ablation patterning method is to handle optical integrated circuit, for example produces a kind of array waveguide optical grating (AWG) assembly 130 on semiconductor wafer workpiece 12.Figure 12 is the representative icon of the ultraviolet ray ablation patterning of an AWG assembly 130.In a preferred embodiment, be to use top illustrated method with AWG 130 patternings, to produce curved grooves 132, for example have 132a, 132b, 132c, 132d in silicon, and the 132e part.Though groove 132 is shown as symmetry, those skilled in the art scholar will figure out via the X of laser orientation system 30 and/or the computer control of Y-axis, this guided laser system output pulse 32 can be guided working surface, makes overlapping pulses 32 produce one and expresses any complex curve form or the pattern of geometric shape.The ability of the ultraviolet ablation patterning method of this combination can be used to be created in the complex curve geometrical pattern in the silicon, and its effective production for multiple AWG assembly 120 is of great use.
With for example use of the pedestal made of aluminium of conventional metals, be not have an advantage for breakthrough process silicon workpiece 12, because these traditional metal materials can cause the damage at silicon workpiece 12 backs in ultraviolet high reflection.The remarkable evidence that demonstrates of experiment is, at columniform via openings 100 or penetrate around the groove 110, after breakthrough process is finished, from the back injury that energy caused of metal base top reflection.Yet, cylindrical hole opening 100 or penetrate groove 110 near do not find back injury, be to drill on these whole finishing holes in the pedestal top with being easy to find.。
Figure 13 is the representative diagram of base assembly 140, and silicon workpiece 12 preferably is placed in the above, carries out breakthrough process to use ultraviolet ablation patterning method.Base assembly 140 preferably comprises a vacuum pedestal 142, pedestal top 144 and one and optionally keeps carrier 146.Pedestal 142 is preferably to make and preferably be tethered to an extra flat board 148 with traditional metal materials.Dull and stereotyped 148 be used for being connected to simply in platform 36 or 38 at least one and from its disengaging.Engagement mechanisms is mechanical type and can comprise the groove and the protuberance of butt joint and can comprise a locking mechanism preferably.The mechanism that those skilled in the art scholar will figure out a variety of accurate alignings and locking and key is possible.Those skilled in the art scholar also will figure out this pedestal 142 can be alternatively in order to be directly fixed on platform 36 or 38.
Pedestal top 144 is preferably with the dielectric material manufacturing, and it has lower reflectivity when selecting the ultraviolet wavelength of using as special patterning.A use by frequency tripling, in the preferred embodiment of the 355 micron wave lengths output of Q-switching regulator diode pumping ND:YAG laser, ultraviolet transparent pedestal top 144 is with ultraviolet ray level or PRK level vitreous silica, MgF2 or CaF2 manufacturing.In another embodiment, ultraviolet transparent pedestal top 144 can be alternatively or extraly with liquid cools, to assist to keep the temperature stability of silicon workpiece 12.Those skilled in the art is the transparent material of a kind of ultraviolet ray with cognition to vitreous silica, and it is made up of the oxidation non-crystalline silicon, and is formed with the chemical bond of silicon and oxygen.
Refer again to Figure 13, one keeps carrier 146 can be placed on above the pedestal top 144, to reach the purpose that supports silicon workpiece 12 and it is being fastened behind ultraviolet ray ablation patterning.Keep carrier 146 also preferably with the transparent material manufacturing of a kind of ultraviolet ray, be damaged to the workpiece 12 that perforation is handled to prevent the back reflection.Keep carrier 146 preferably through processing to comprise shallow cavity type, so that processed silicon workpiece 12 is stabilized in wherein after the breakthrough process operation.
In an alternate embodiment, pedestal top 144 or maintenance carrier 146 can be with a kind of ultraviolet absorption material manufacturings, for example aluminium or copper, so that laser system 10 can be used the tool path archives with shallow cavity pattern, this cavity is pierced among the workpiece 12 material that pattern-cut with correspondence becomes pedestal top 144 or keeps carrier 146.This cavity can be, for example corresponding to wanting drilled hole or third edge pattern and preventing that in the perforation cuts process back of workpiece 12 from sustaining damage.In addition, any residue that produces from process can Shen Dian to cavity away from workpiece 12 backs.In a preferred embodiment, the pattern of shallow cavity is treated for having a little greater than the workpiece 12 of correspondence the size after processed, workpiece 12 after processed can be fixed be placed in the cavity that keeps carrier 146.In an alternate embodiment, keeping carrier 146 is with for example optics manufacturing or the etching mode manufacturing of the transparent material of ultraviolet ray to substitute, and aims at with being connect preface and be fixed on above the pedestal top 144.These embodiment of base assembly 140 for example also have some useful applications in the ultraviolet through hole boring of polyamide at other material.
Person of skill in the art will appreciate that Purge gas, for example nitrogen, argon, helium, and dry air can usefully be used for assisting removing discarded flue gas from workpiece 12.Can use the near zone that this Purge gas is sent to very close working surface attached to the transmission head of laser system 10.
In order to use ultraviolet ablation pattern method to improve the surface quality of the silicon workpiece 12 of processing, processed workpiece 12 can use ultrasonic to bathe and clean in liquid, and this liquid includes but not limited to water, acetone, methyl alcohol and ethanol.Person of skill in the art will appreciate that and clean the silicon workpiece of handling 12 in hydrofluoric acid, can be helpful when removing unwanted oxide layer.
Though the explanation that provides above mainly is at handling silicon and GaAs, illustrated method also can be applicable to the semiconductor of other substrate that can be used as workpiece 12 70 usually, for example carborundum, silicon nitride, or indium phosphide.
To one skilled in the art, clearly, do not break away from of the present invention according to the principle prerequisite under, can change top illustrated embodiment of the invention details.Therefore, scope of the present invention should be defined by claims.

Claims (37)

1. one kind in order to laser treatment silicon, GaAs, indium phosphide, or the method for monocrystalline sapphire substrate, and it is to comprise following step:
From the positioning system signal processor, provide and reach the fast moving control signal at a slow speed;
Respond this mobile at a slow speed control signal, utilize at a slow speed the locator driver to control relatively moving of transmission platform on a large scale;
Respond this fast moving control signal, utilize the quick positioner driver to control relatively moving among a small circle of quick positioner;
Producing wavelength is shorter than 400 nanometers and has first laser system output greater than 200 little Jiao's output pulse energy;
This first laser system output steering is arrived this on-chip target position, on this target position, to have first spot area in ablation on this target material less than 25 microns;
Producing wavelength is shorter than 400 nanometers and has second laser system output greater than 200 little Jiao's output pulse energy;
Guide this second laser system output, to impinge upon the lip-deep second target position that has less than 25 micron second spot area of this target material, so that this second spot area is overlapping to small part and this first spot area.
2. one kind is used in laser treatment silicon, GaAs, indium phosphide, or the method for monocrystalline sapphire substrate, and it is to comprise following step;
Producing wavelength is shorter than 400 nanometers and has first laser system output greater than 200 little Jiao's output pulse energy;
With this first laser system output steering to this on-chip target position, with ablation at the lip-deep substrate material that has less than 25 microns first spot area of this target material in this target position;
Producing wavelength is shorter than 400 nanometers and has second laser system output greater than 200 little Jiao's output pulse energy;
Guide this second laser system output, to impinge upon the lip-deep second target position that has less than 25 micron second spot area of this target material, so that this second spot area penetrates the through hole of this substrate to small part and this first spot area are overlapping with formation, this substrate thickness is at least 50 microns and this through hole and has the ratio of width to height that is approximately greater than 20: 1.
3. method as claimed in claim 2, wherein this laser system output comprises at least 5 laser system output pulses.
4. method as claimed in claim 2, wherein this substrate front surface is clashed into and this through hole penetrates its back of the body surface, and this method further comprises:
Use the feature of the through hole on this back of the body surface to come alignment member, to carry out a process on this substrate back of the body surface.
5. method as claimed in claim 4 wherein forms at least two through holes, and use two through holes with the back of the body surface of aiming at this substrate further to handle.
6. method as claimed in claim 2, the front surface and this through hole that wherein clash into this substrate penetrate its back of the body surface, and wherein this substrate is with base supports, and the surfacing of this pedestal is for not reflecting basically for this laser system output.
7. method as claimed in claim 6, wherein this surfacing of this pedestal is to suppress the back of the body surface of damage from laser to this substrate basically.
8. method as claimed in claim 6, wherein this surfacing of this pedestal is transmission for this laser system output basically.
9. method as claimed in claim 6, wherein this surfacing of this pedestal absorbs the wavelength of this laser system output basically.
10. method as claimed in claim 2 wherein clashes into this substrate front surface and through hole and penetrate its back of the body surface, and wherein this substrate is a base supports, and the surfacing of this pedestal has the opening that carries out the through hole processing thereon.
11. a laser treatment silicon, GaAs, indium phosphide, or the method for monocrystalline sapphire substrate, it is to comprise following step:
Producing wavelength is shorter than 400 nanometers and has first laser system output greater than 200 little Jiao's output pulse energy;
With the output steering of this first laser system to this on-chip target position, with ablation at the lip-deep substrate material that has less than 25 microns first spot area of this target material in this target position;
Producing wavelength is shorter than 400 nanometers and has second laser system output greater than 200 little Jiao's output pulse energy;
Guide the output of this second laser system to impinge upon the lip-deep second target position that has less than 25 microns second spot area of this target material, so that this second spot area is overlapping to small part and this first spot area, to form the joint-cutting of length dimension greater than this luminous point size.
12. method as claimed in claim 11, wherein the feature of this laser output suppresses the formation of melt-edge.
13. method as claimed in claim 11, wherein the feature of this laser output suppresses the formation of slag.
14. method as claimed in claim 11, wherein the feature of this laser output suppresses peeling off of this joint-cutting edge.
15. method as claimed in claim 11 further comprises:
Producing wavelength is shorter than 400 nanometers and has continuous laser system output greater than 200 little Jiao's output pulse energy;
Guide the output of this continuous laser system, impinging upon the continuous target position that has on this target material surface less than 25 microns spot area so that this continuous spot area to small part with distinctly spot area is overlapping with the formation joint-cutting the preceding.
16. method as claimed in claim 11, wherein this joint-cutting comprises the form of a curve.
17. method as claimed in claim 11 further comprises:
From a location system signal processor, provide and reach the fast moving control signal at a slow speed;
Utilize at a slow speed the locator driver to control relatively moving of transmission platform on a large scale, to respond this mobile at a slow speed control signal;
Utilize the quick positioner driver to control relatively moving among a small circle of quick positioner to influence the tracing pattern of this joint-cutting, to respond this fast moving control signal.
18. method as claimed in claim 11, wherein this substrate has the deep seam with bottom, should element be separated deep seam, but keep sufficient substrate thickness to connect this element in the bottom of this deep seam, method further comprises uses this laser system to export separately this element.
19. method as claimed in claim 11, wherein this substrate is with base supports, and the surfacing of this pedestal exports for this laser system that right and wrong are reflexive basically.
20. method as claimed in claim 19, wherein the surfacing of this pedestal suppresses the laser hazard on this substrate back of the body surface basically.
21. method as claimed in claim 19, wherein the surfacing of this pedestal is to be transmission basically for this laser system output.
22. method as claimed in claim 19, wherein the surfacing of this pedestal is absorbefacient to the wavelength of this laser system output basically.
23. method as claimed in claim 11, wherein this substrate has the substrate degree of depth and this joint-cutting extends through this substrate degree of depth, and wherein this pedestal has and penetrates the opening that joint-cutting is handled thereon.
24. a method of having additional supply of work-piece throughput, this workpiece have at least 300 microns the substrate material degree of depth and comprise silicon, GaAs, indium phosphide, or the monocrystalline sapphire substrate, this method comprises:
Sign first feature on the first surface of this workpiece;
With respect to this first feature on this first surface, aim at the first target position of laser system, so that this first target position is on this first surface and at the near zone on one side that this workpiece assembly is wanted;
Guide the output of one or more first laser, with the first surface that impinges upon this first target position and make joint-cutting form first joint-cutting subsequently linearly less than this depth of material;
With respect to second feature on this first surface or the second surface, aim at the second target position of this laser system, so that this second target position is on the second surface and at the near zone on one side of wanting of assembly and in identical plane, this first target position; And
Guide the output of one or more second laser, impinging upon the second surface of this second target position, and in the plane identical, form second joint-cutting defines one side that this assembly wants with formation the cutting that penetrates subsequently linearly with this first joint-cutting.
25. method as claimed in claim 24, wherein first and second feature comprises each other through hole, its be with laser drill pass depth of material and significantly this first and this second surface on.
26. method as claimed in claim 24, wherein this substrate is with base supports, and the surfacing of this pedestal is for non-reflexive for this laser system output basically.
27. method as claimed in claim 24, wherein the surfacing of this pedestal suppresses the back of the body surface of damage from laser to this substrate basically.
28. method as claimed in claim 24, wherein output is transmission to the surfacing of this pedestal basically for laser system.
29. method as claimed in claim 24, wherein the surfacing of this pedestal absorbs basically for the wavelength of this laser system output.
30. method as claimed in claim 24, wherein this pedestal has an opening that carries out the through hole processing thereon.
31. one kind has first and silicon, GaAs, the indium phosphide of second surface in order to laser treatment, or the method for the workpiece substrate of monocrystalline sapphire, method comprises:
Provide from a location system signal processor and to reach the fast moving control signal at a slow speed;
Utilize at a slow speed the locator driver to control relatively moving of transmission platform on a large scale, to respond this mobile at a slow speed control signal, this transmission platform comprises or supporting base, and this pedestal has the surfacing that for laser system output is essentially non-reflection;
Utilize the quick positioner driver to control relatively moving among a small circle of quick positioner to respond this fast moving control signal;
Producing wavelength is shorter than 400 nanometers and has output greater than the continuous laser system of 200 little Jiao's output pulse energy;
Guide this continuous laser system output, with the continuous target position of having on the first surface that impinges upon this workpiece less than 25 microns spot area, so that continuous spot area is overlapping to small part and indivedual aforesaid spot area, to form through hole at this substrate or to penetrate cutting and do not damage second surface basically.
32. method as claimed in claim 31, wherein the surfacing of this pedestal is transmission for this laser system output basically.
33. method as claimed in claim 31, wherein the surfacing of this pedestal absorbs basically for the wavelength of this laser system output.
34. one kind with handle silicon, GaAs, indium phosphide, or the laser system of the workpiece substrate of monocrystalline sapphire, it comprises:
A locator at a slow speed, be used to influence relatively moving between instrument and this workpiece on a large scale, this at a slow speed locator comprise that one contains or the transmission platform of supporting base, this pedestal has the surfacing that for laser system output is essentially non-reflection;
A quick anchor drive is used to influence relatively moving among a small circle between this laser system output and this workpiece;
A framing signal processor is used for obtaining at a slow speed and the fast moving control signal from positioning instruction;
A locator driver at a slow speed is used to control relatively moving to respond this movable signal at a slow speed of this transmission platform on a large scale;
A quick positioner driver is used to control relatively moving to respond this movable signal at a slow speed of this quick positioner on a large scale; And
A resonator is used to produce this laser system output.
35. laser system as claimed in claim 34, wherein the surfacing of this pedestal is exported transmission basically for this laser system.
36. laser system as claimed in claim 34, wherein the surfacing of this pedestal absorbs basically for the wavelength of this laser system output.
37. laser system as claimed in claim 34, wherein this quick positioner driver promotion has the generation of the joint-cutting of tracing pattern.
CNB028044045A 2001-01-31 2002-01-10 Ultraviolet laser ablative patterning of microstructures in semiconductors Expired - Fee Related CN1301178C (en)

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US09/803,382 US20020033558A1 (en) 2000-09-20 2001-03-09 UV laser cutting or shape modification of brittle, high melting temperature target materials such as ceramics or glasses

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CA2436736A1 (en) 2002-08-08
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WO2002060636A1 (en) 2002-08-08
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JP4634692B2 (en) 2011-02-16

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