CN1599047A - 半导体集成电路器件的制造方法 - Google Patents
半导体集成电路器件的制造方法 Download PDFInfo
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- CN1599047A CN1599047A CNA2004100586828A CN200410058682A CN1599047A CN 1599047 A CN1599047 A CN 1599047A CN A2004100586828 A CNA2004100586828 A CN A2004100586828A CN 200410058682 A CN200410058682 A CN 200410058682A CN 1599047 A CN1599047 A CN 1599047A
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- H01L2924/153—Connection portion
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Abstract
Description
Claims (20)
Applications Claiming Priority (2)
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JP327046/2003 | 2003-09-19 | ||
JP2003327046A JP4206320B2 (ja) | 2003-09-19 | 2003-09-19 | 半導体集積回路装置の製造方法 |
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CNA2008101690418A Division CN101431036A (zh) | 2003-09-19 | 2004-07-28 | 半导体集成电路器件的制造方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102623402A (zh) * | 2007-06-19 | 2012-08-01 | 瑞萨电子株式会社 | 半导体集成电路装置的制造方法 |
CN110476236A (zh) * | 2017-01-30 | 2019-11-19 | 株式会社新川 | 安装装置以及安装系统 |
CN113394133A (zh) * | 2021-05-08 | 2021-09-14 | 桂林芯飞光电子科技有限公司 | 一种探测器芯片转运用封装调节装置及方法 |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4206320B2 (ja) * | 2003-09-19 | 2009-01-07 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
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US7948034B2 (en) * | 2006-06-22 | 2011-05-24 | Suss Microtec Lithography, Gmbh | Apparatus and method for semiconductor bonding |
FR2949695B1 (fr) * | 2009-09-10 | 2011-12-23 | Commissariat Energie Atomique | Procede d'assemblage pour brasage |
JP2011061073A (ja) * | 2009-09-11 | 2011-03-24 | Toshiba Corp | 半導体装置の製造方法及び半導体製造装置 |
US8381965B2 (en) | 2010-07-22 | 2013-02-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermal compress bonding |
US8104666B1 (en) | 2010-09-01 | 2012-01-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermal compressive bonding with separate die-attach and reflow processes |
US8177862B2 (en) | 2010-10-08 | 2012-05-15 | Taiwan Semiconductor Manufacturing Co., Ltd | Thermal compressive bond head |
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US8381967B1 (en) * | 2012-01-05 | 2013-02-26 | Texas Instruments Incorporated | Bonding a solder bump to a lead using compression and retraction forces |
US8870051B2 (en) | 2012-05-03 | 2014-10-28 | International Business Machines Corporation | Flip chip assembly apparatus employing a warpage-suppressor assembly |
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US9082885B2 (en) | 2013-05-30 | 2015-07-14 | Samsung Electronics Co., Ltd. | Semiconductor chip bonding apparatus and method of forming semiconductor device using the same |
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US9165902B2 (en) * | 2013-12-17 | 2015-10-20 | Kulicke And Soffa Industries, Inc. | Methods of operating bonding machines for bonding semiconductor elements, and bonding machines |
JP6400938B2 (ja) * | 2014-04-30 | 2018-10-03 | ファスフォードテクノロジ株式会社 | ダイボンダ及びボンディング方法 |
KR20160048301A (ko) * | 2014-10-23 | 2016-05-04 | 삼성전자주식회사 | 본딩 장치 및 그를 포함하는 기판 제조 설비 |
US10475764B2 (en) | 2014-12-26 | 2019-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Die bonder and methods of using the same |
DE102015120156B4 (de) * | 2015-11-20 | 2019-07-04 | Semikron Elektronik Gmbh & Co. Kg | Vorrichtung zur materialschlüssigen Verbindung von Verbindungspartnern eines Leistungselekronik-Bauteils und Verwendung einer solchen Vorrichtung |
TWI607587B (zh) * | 2016-09-13 | 2017-12-01 | 台灣琭旦股份有限公司 | 固晶穩固製程 |
JP6789791B2 (ja) * | 2016-12-13 | 2020-11-25 | 東レエンジニアリング株式会社 | 半導体装置の製造装置および製造方法 |
IT201800006846A1 (it) * | 2018-07-02 | 2020-01-02 | Gruppo di pressatura per una pressa di sinterizzazione di componenti elettronici su un substrato | |
IT201800020275A1 (it) * | 2018-12-20 | 2020-06-20 | Amx Automatrix S R L | Pressa di sinterizzazione per sinterizzare componenti elettronici su un substrato |
CN111816614A (zh) * | 2020-02-28 | 2020-10-23 | 浙江集迈科微电子有限公司 | 一种芯片贴装方式 |
KR102196378B1 (ko) * | 2020-04-13 | 2020-12-30 | 제엠제코(주) | 반도체 부품 부착 장비 |
KR20210157200A (ko) | 2020-06-19 | 2021-12-28 | 삼성전자주식회사 | 칩 본딩 장치 |
US11804467B2 (en) * | 2020-06-25 | 2023-10-31 | Micron Technology, Inc. | Radiative heat collective bonder and gangbonder |
WO2023164251A1 (en) * | 2022-02-28 | 2023-08-31 | Board Of Regents, The University Of Texas System | Programmable precision etching |
CN117139836B (zh) * | 2023-10-31 | 2024-01-23 | 常州天正智能装备有限公司 | 激光切割除尘器用清洁罐、除尘系统及其工作方法 |
Family Cites Families (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3617682A (en) * | 1969-06-23 | 1971-11-02 | Gen Electric | Semiconductor chip bonder |
US3698621A (en) * | 1970-10-27 | 1972-10-17 | Collins Radio Co | Bonding apparatus |
US3946931A (en) * | 1974-11-27 | 1976-03-30 | Western Electric Company, Inc. | Methods of and apparatus for bonding an article to a substrate |
US4607779A (en) * | 1983-08-11 | 1986-08-26 | National Semiconductor Corporation | Non-impact thermocompression gang bonding method |
JPS60140897A (ja) * | 1983-12-28 | 1985-07-25 | 日本電気株式会社 | 樹脂絶縁多層基板 |
US4603802A (en) * | 1984-02-27 | 1986-08-05 | Fairchild Camera & Instrument Corporation | Variation and control of bond force |
US4605833A (en) * | 1984-03-15 | 1986-08-12 | Westinghouse Electric Corp. | Lead bonding of integrated circuit chips |
DE3722730A1 (de) * | 1987-07-09 | 1989-01-19 | Productech Gmbh | Geheizter stempel |
JPH02284438A (ja) | 1989-04-26 | 1990-11-21 | Seiko Epson Corp | 半導体装置の実装方法 |
JPH03215951A (ja) * | 1990-01-20 | 1991-09-20 | Toshiba Corp | インナリードボンダ |
JPH052177A (ja) | 1991-06-26 | 1993-01-08 | Osaki Eng Kk | 液晶モジユール製造装置 |
JP2839215B2 (ja) * | 1991-09-04 | 1998-12-16 | 株式会社カイジョー | ボンディング装置 |
US5425491A (en) * | 1992-07-01 | 1995-06-20 | Sumitomo Electric Industries, Ltd. | Bonding tool, production and handling thereof |
JP3331570B2 (ja) * | 1993-09-08 | 2002-10-07 | ソニー株式会社 | 熱圧着装置と熱圧着方法および液晶表示装置の生産方法 |
JP2616558B2 (ja) * | 1993-12-14 | 1997-06-04 | 日本電気株式会社 | バンプ形成装置およびバンプ形成方法 |
DE19549635B4 (de) * | 1995-02-15 | 2004-12-09 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Verbindung eines flexiblen Substrats mit einem Chip |
US5894982A (en) * | 1995-09-29 | 1999-04-20 | Kabushiki Kaisha Toshiba | Connecting apparatus |
TW422874B (en) * | 1996-10-08 | 2001-02-21 | Hitachi Chemical Co Ltd | Semiconductor device, semiconductor chip mounting substrate, methods of manufacturing the device and substrate, adhesive, and adhesive double coated film |
JP3330037B2 (ja) * | 1996-11-29 | 2002-09-30 | 富士通株式会社 | チップ部品の接合方法および装置 |
JP3293512B2 (ja) * | 1997-03-10 | 2002-06-17 | 松下電器産業株式会社 | コネクタの熱圧着方法 |
JP3094948B2 (ja) * | 1997-05-26 | 2000-10-03 | 日本電気株式会社 | 半導体素子搭載用回路基板とその半導体素子との接続方法 |
US5988487A (en) * | 1997-05-27 | 1999-11-23 | Fujitsu Limited | Captured-cell solder printing and reflow methods |
JP2997231B2 (ja) * | 1997-09-12 | 2000-01-11 | 富士通株式会社 | マルチ半導体ベアチップ実装モジュールの製造方法 |
JP3368814B2 (ja) * | 1997-10-20 | 2003-01-20 | 松下電器産業株式会社 | 電子部品の熱圧着装置 |
JP2000036501A (ja) * | 1998-05-12 | 2000-02-02 | Sharp Corp | ダイボンド装置 |
US6672500B2 (en) * | 1998-06-25 | 2004-01-06 | International Business Machines Corporation | Method for producing a reliable solder joint interconnection |
JP2000100837A (ja) * | 1998-09-17 | 2000-04-07 | Miyagi Oki Denki Kk | 半導体素子の実装装置 |
JP2000114314A (ja) * | 1998-09-29 | 2000-04-21 | Hitachi Ltd | 半導体素子実装構造体およびその製造方法並びにicカード |
EP1030349B2 (de) | 1999-01-07 | 2013-12-11 | Kulicke & Soffa Die Bonding GmbH | Verfahren und Vorrichtung zum Behandeln von auf einem Substrat angeordneten elektronischen Bauteilen, insbesondere von Halbleiterchips |
KR100502222B1 (ko) * | 1999-01-29 | 2005-07-18 | 마츠시타 덴끼 산교 가부시키가이샤 | 전자부품의 실장방법 및 그 장치 |
JP3301075B2 (ja) * | 1999-04-20 | 2002-07-15 | ソニーケミカル株式会社 | 半導体装置の製造方法 |
CN100382261C (zh) * | 1999-07-02 | 2008-04-16 | 松下电器产业株式会社 | 电荷发生半导体基板用凸起形成装置、电荷发生半导体基板的除静电方法、电荷发生半导体基板用除静电装置、及电荷发生半导体基板 |
JP2001034187A (ja) * | 1999-07-22 | 2001-02-09 | Nec Corp | 熱圧着装置および熱圧着方法 |
JP2001068487A (ja) * | 1999-08-31 | 2001-03-16 | Toray Eng Co Ltd | チップボンディング方法及びその装置 |
JP4068844B2 (ja) * | 1999-11-29 | 2008-03-26 | 芝浦メカトロニクス株式会社 | 部品実装装置および部品実装方法 |
JP2001168146A (ja) | 1999-12-09 | 2001-06-22 | Sony Corp | 部品装着装置及び部品装着方法 |
TW475227B (en) * | 1999-12-28 | 2002-02-01 | Nissei Plastics Ind Co | IC-card manufacturing apparatus |
JP2002076589A (ja) * | 2000-08-31 | 2002-03-15 | Hitachi Ltd | 電子装置及びその製造方法 |
JP2002151551A (ja) * | 2000-11-10 | 2002-05-24 | Hitachi Ltd | フリップチップ実装構造、その実装構造を有する半導体装置及び実装方法 |
JP3665579B2 (ja) * | 2001-02-26 | 2005-06-29 | ソニーケミカル株式会社 | 電気装置製造方法 |
TW559963B (en) * | 2001-06-08 | 2003-11-01 | Shibaura Mechatronics Corp | Pressuring apparatus of electronic device and its method |
JP3645511B2 (ja) * | 2001-10-09 | 2005-05-11 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
JP2003188210A (ja) * | 2001-12-18 | 2003-07-04 | Mitsubishi Electric Corp | 半導体装置 |
JP2003338587A (ja) * | 2002-05-21 | 2003-11-28 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2004096048A (ja) * | 2002-09-04 | 2004-03-25 | Seiko Epson Corp | 基板の接続方法、熱圧着装置、電気光学装置の製造方法、電気光学装置、および電子機器 |
JP2004145129A (ja) * | 2002-10-25 | 2004-05-20 | Advanced Display Inc | 表示装置およびその製造方法ならびに表示装置の製造装置 |
JPWO2004107432A1 (ja) * | 2003-05-29 | 2006-07-20 | 富士通株式会社 | 電子部品の実装方法、取外し方法及びその装置 |
JP3921459B2 (ja) * | 2003-07-11 | 2007-05-30 | ソニーケミカル&インフォメーションデバイス株式会社 | 電気部品の実装方法及び実装装置 |
JP4206320B2 (ja) * | 2003-09-19 | 2009-01-07 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
JP3898689B2 (ja) * | 2003-11-10 | 2007-03-28 | 芝浦メカトロニクス株式会社 | 部品ボンディング装置 |
JP2005223202A (ja) * | 2004-02-06 | 2005-08-18 | Seiko Epson Corp | 半導体装置の製造方法及びその製造装置 |
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US7674987B2 (en) * | 2007-03-29 | 2010-03-09 | Ibiden Co., Ltd. | Multilayer printed circuit board |
US7919849B2 (en) * | 2007-04-04 | 2011-04-05 | Ibiden Co., Ltd. | Package substrate and device for optical communication |
-
2003
- 2003-09-19 JP JP2003327046A patent/JP4206320B2/ja not_active Expired - Fee Related
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2004
- 2004-07-28 CN CNA2008101690418A patent/CN101431036A/zh active Pending
- 2004-07-28 CN CNB2004100586828A patent/CN100435301C/zh not_active Expired - Fee Related
- 2004-07-29 KR KR1020040059614A patent/KR20050029110A/ko not_active Application Discontinuation
- 2004-07-30 US US10/901,999 patent/US7270258B2/en not_active Expired - Fee Related
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2007
- 2007-08-10 US US11/837,168 patent/US7757930B2/en active Active
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2010
- 2010-07-14 US US12/836,432 patent/US7861912B2/en active Active
- 2010-11-30 US US12/956,524 patent/US8074868B2/en not_active Expired - Fee Related
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2011
- 2011-11-14 US US13/295,336 patent/US8292159B2/en not_active Expired - Fee Related
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102623402A (zh) * | 2007-06-19 | 2012-08-01 | 瑞萨电子株式会社 | 半导体集成电路装置的制造方法 |
CN102623402B (zh) * | 2007-06-19 | 2014-08-27 | 瑞萨电子株式会社 | 半导体集成电路装置的制造方法 |
CN110476236A (zh) * | 2017-01-30 | 2019-11-19 | 株式会社新川 | 安装装置以及安装系统 |
CN110476236B (zh) * | 2017-01-30 | 2023-08-25 | 株式会社新川 | 安装装置以及安装系统 |
CN113394133A (zh) * | 2021-05-08 | 2021-09-14 | 桂林芯飞光电子科技有限公司 | 一种探测器芯片转运用封装调节装置及方法 |
Also Published As
Publication number | Publication date |
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US8640943B2 (en) | 2014-02-04 |
US20110070696A1 (en) | 2011-03-24 |
CN101431036A (zh) | 2009-05-13 |
US20120329211A1 (en) | 2012-12-27 |
JP2005093838A (ja) | 2005-04-07 |
JP4206320B2 (ja) | 2009-01-07 |
US7861912B2 (en) | 2011-01-04 |
US20070287262A1 (en) | 2007-12-13 |
US20100279464A1 (en) | 2010-11-04 |
CN100435301C (zh) | 2008-11-19 |
KR20050029110A (ko) | 2005-03-24 |
US7270258B2 (en) | 2007-09-18 |
US20050061856A1 (en) | 2005-03-24 |
US7757930B2 (en) | 2010-07-20 |
US8074868B2 (en) | 2011-12-13 |
US20120058603A1 (en) | 2012-03-08 |
US8292159B2 (en) | 2012-10-23 |
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