CN1653554A - 通过使用关于所存储数据的质量的信息来增加错误校正码的效率和操作多电平存储系统 - Google Patents
通过使用关于所存储数据的质量的信息来增加错误校正码的效率和操作多电平存储系统 Download PDFInfo
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- CN1653554A CN1653554A CNA038113287A CN03811328A CN1653554A CN 1653554 A CN1653554 A CN 1653554A CN A038113287 A CNA038113287 A CN A038113287A CN 03811328 A CN03811328 A CN 03811328A CN 1653554 A CN1653554 A CN 1653554A
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- G—PHYSICS
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
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- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1012—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using codes or arrangements adapted for a specific type of error
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- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1072—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in multilevel memories
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
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- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
- G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C2029/0411—Online error correction
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- G—PHYSICS
- G11—INFORMATION STORAGE
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- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
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- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
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- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (34)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/152,137 US6751766B2 (en) | 2002-05-20 | 2002-05-20 | Increasing the effectiveness of error correction codes and operating multi-level memory systems by using information about the quality of the stored data |
US10/152,137 | 2002-05-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1653554A true CN1653554A (zh) | 2005-08-10 |
CN100576359C CN100576359C (zh) | 2009-12-30 |
Family
ID=29419533
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN03811328A Expired - Lifetime CN100576359C (zh) | 2002-05-20 | 2003-05-12 | 通过使用关于所存储数据的质量的信息来增加错误校正码的效率和操作多电平存储系统 |
Country Status (8)
Country | Link |
---|---|
US (3) | US6751766B2 (zh) |
EP (1) | EP1506552B8 (zh) |
JP (1) | JP4638224B2 (zh) |
KR (1) | KR100993493B1 (zh) |
CN (1) | CN100576359C (zh) |
AU (1) | AU2003241428A1 (zh) |
TW (1) | TWI277099B (zh) |
WO (1) | WO2003100791A1 (zh) |
Cited By (7)
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CN102804146A (zh) * | 2009-06-29 | 2012-11-28 | 桑迪士克科技股份有限公司 | 跟踪存储器件内的错误数据的系统和方法 |
CN101512661B (zh) * | 2006-05-12 | 2013-04-24 | 苹果公司 | 用于存储设备的失真估计与纠错编码的组合 |
CN103208309A (zh) * | 2006-05-12 | 2013-07-17 | 苹果公司 | 存储设备中的失真估计和消除 |
US8650462B2 (en) | 2005-10-17 | 2014-02-11 | Ramot At Tel Aviv University Ltd. | Probabilistic error correction in multi-bit-per-cell flash memory |
CN103902483A (zh) * | 2012-12-26 | 2014-07-02 | 擎泰科技股份有限公司 | 非易失性存储器的数据安排方法及存储器控制系统 |
CN101529525B (zh) * | 2005-10-17 | 2016-03-30 | 特拉维夫大学拉莫特有限公司 | 每单元多位的闪速存储器的概率错误校正 |
CN107633257A (zh) * | 2017-08-15 | 2018-01-26 | 上海数据交易中心有限公司 | 数据质量评估方法及装置、计算机可读存储介质、终端 |
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US6751766B2 (en) * | 2002-05-20 | 2004-06-15 | Sandisk Corporation | Increasing the effectiveness of error correction codes and operating multi-level memory systems by using information about the quality of the stored data |
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US7817469B2 (en) * | 2004-07-26 | 2010-10-19 | Sandisk Il Ltd. | Drift compensation in a flash memory |
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CN103902483A (zh) * | 2012-12-26 | 2014-07-02 | 擎泰科技股份有限公司 | 非易失性存储器的数据安排方法及存储器控制系统 |
CN107633257A (zh) * | 2017-08-15 | 2018-01-26 | 上海数据交易中心有限公司 | 数据质量评估方法及装置、计算机可读存储介质、终端 |
CN107633257B (zh) * | 2017-08-15 | 2020-04-17 | 上海数据交易中心有限公司 | 数据质量评估方法及装置、计算机可读存储介质、终端 |
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EP1506552A1 (en) | 2005-02-16 |
CN100576359C (zh) | 2009-12-30 |
JP4638224B2 (ja) | 2011-02-23 |
US20080155380A1 (en) | 2008-06-26 |
JP2005527062A (ja) | 2005-09-08 |
US8103938B2 (en) | 2012-01-24 |
US20040225947A1 (en) | 2004-11-11 |
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TW200401303A (en) | 2004-01-16 |
EP1506552B1 (en) | 2016-09-07 |
US7360136B2 (en) | 2008-04-15 |
EP1506552B8 (en) | 2016-11-02 |
US20030217323A1 (en) | 2003-11-20 |
KR100993493B1 (ko) | 2010-11-10 |
US6751766B2 (en) | 2004-06-15 |
EP1506552A4 (en) | 2009-09-23 |
KR20050027216A (ko) | 2005-03-18 |
WO2003100791A1 (en) | 2003-12-04 |
TWI277099B (en) | 2007-03-21 |
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