CN1678767A - 向－制程室提供气体的方法及设备 - Google Patents

向－制程室提供气体的方法及设备 Download PDF

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CN1678767A
CN1678767A CNA038204096A CN03820409A CN1678767A CN 1678767 A CN1678767 A CN 1678767A CN A038204096 A CNA038204096 A CN A038204096A CN 03820409 A CN03820409 A CN 03820409A CN 1678767 A CN1678767 A CN 1678767A
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tank body
equipment
precursor material
gas
inlet port
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S·甘古里
L·陈
V·W·库
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Applied Materials Inc
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract

兹提供一种形成用于一制程系统之气体的方法及设备。于一实施例中，一种形成用于一制程系统之气体的设备包括一罐体，其具有至少一设于两埠间之挡板且该罐体含有一先趋物材料。该先趋物材料在一界定压力下加热至一界定温度时系适于形成一气体蒸气。该挡板可驱使载气按一延伸之平均路径(位于该入口埠及出口埠间)移动。于另一实施例中，一种用于形成气体之设备包括一罐体，其具有一管体，该管体可将流入该罐体之载气引离该罐体内之先趋物材料。

Description

向一制程室提供气体的方法及设备
技术领域
本发明之实施例一般系关于一种用于提供气体至一制程室之方法及设备。
背景技术
集成电路已发展成可于单一晶片上设有无数个电晶体、电容器以及电阻之复杂元件。晶片设计的持续发展也需要更快的电路系统及更高的电路密度以求取更精确的制程。基材的精确制程需要准确的控制温度，以及制程期间所用流体传递之比例及压力，一般系利用设有各种阀门、节流器、流量控制器及类似者之气体面板以促进此等流体的控制。
制程期间所用流体系供应至气体面板，而液体或气体则来自中心气体源或设于该面板邻近处之供应导管。某些制程气体可由一固体材料经升华制程而在(或接近)该气体面板处形成。升华制程一般系指气体在一特定压力及温度下，由一固体直接形成气体，而不经过液体状态。某些可经由升华制程产生之气体包括二氟化氙(xenon difluoride)、四羰化镍(nickel carbonyl)、六羰基钨(tungsten hexa-carbonyl)，尤其是五(二甲氨)钽(pentakis(dimethylamino)tantalum(PDMAT))。此等材料非常活泼且昂贵，故升华制程时需费心控制以管理升华固体的形成，避免过度浪费。
习知升华制程一般系实施于一加热导管中，其中装有(或填有)欲升华之固体先趋物材料。当需要气体时，可加热支撑该固体先趋物材料之导管壁及/或托架以产生气体。
可替代之气体形成制程包括将一固体或液体先趋物材料与一液体混合。载气(carrier gas)则接着藉混合而沸腾以载送所产生之制程气体。
然而，当载气经由(或撞击)固体先趋物或液体/固体混合物而沸腾时，来自固体先趋物或液体之粒子会由载气搭送至制程室中。液体或固体粒子便成为处理室或基材的污染来源。因此，减少粒子由先趋物气体产生器进入制程室中将有两种效果。第一，减少粒子将可降低基材缺陷。第二，减少粒子也可缩减清理处理室表面污染所需的停机时间。
因此，业界对可改良提供先趋气体至制程室之方法及设备仍有需求。
发明的内容
本发明之一态样大致系提供一种形成用于制程系统之气体的设备。于一实施例中，形成用于制程系统之气体的设备包括一含有一先趋物材料之罐体。该罐体包括一顶部、一底部及一侧壁以界定出一内体积。该内体积具有一上方区域及一下方区域，其中该下方区域至少部分由该先趋物材料所填充。一入口埠及一出口埠系穿设于该罐体并与该上方区域流通。该罐体上方区域内之该入口埠及该出口埠之间并设至少一挡板。
于本发明之另一态样中，系提供一种形成用于制程系统之气体的方法。于一实施例中，该用以形成气体之方法包括提供一先趋物材料于该罐体之下方区域中、由该入口埠流动一载气经该罐体之上方区域沿一延伸平均路径至出口埠、以及加热该先趋物材料以形成制程气体。
附图说明
本发明于上文所概述之更特定说明可藉由参照阐示于附加图式之实施例而得。然应注意的是，该等附加图示说明仅为本发明之一般实施例，因此不应视为本发明之限制，本发明应涵盖其他等效之实施例。
第1图系一具有气体形成系统之一实施例之制程系统的简略概要图。
第2A图系一气体形成罐体之一实施例的截面侧视图。
第2B图系一气体形成罐体之一实施例的截面俯视图。
第3图系一气体形成罐体之另一实施例的截面图；及
第4图系一气体形成罐体之另一实施例的截面侧视图。
为便于了解，全文均使用相同参考标号来表示共同出现于图式中之相同元件。
具体实施方式
第1图大致说明一半导体晶圆制程系统120之简略概要图。该制程系统120一般包含一与一气体输送系统104耦接之制程系统106。该制程系统106可为任何合适之制程室，例如该等由加州圣塔克拉拉市美商应用材料公司(Applied Materials)所上市之制程室。例示性之制程室包括DPS CENTURA蚀刻处理室、PRODUCER化学气相沉积处理室、及ENDURA物理气相沉积处理室以及除此等以外之其他处理室。
该气体输送系统104一般系控制输送至制程室106的各种制程以及惰性气体之速率及压力。制程种类及数量以及其他输送至该制程室106之气体一般系依据欲执行于与之耦接之该制程室106的制程而选定。虽然为简化说明而仅于第1图之该气体输送系统104中显示一单一气体输送线路，然应理解的是额外的气体输送线路也可使用。
该气体输送系统104一般系耦接于一载气源102及该制程室106之间。该载气源102可为一区域或远端导管、或一可供应载气遍及该设备之中央设备源。该载气源102一般系供应如氩气、氮气、氦气或其他惰性或非反应性气体之载气。
该气体输送系统104一般包括一流量控制器110，其耦接于该载气源102及一制程气体源罐体100之间。该流量控制器110可为一平衡阀、调节阀、针阀、调整器、质流控制器或类似者。一种可使用之流量控制器110系由加州蒙特瑞市之西爱尔(Sierra)设备公司所上市。
气体源罐体100一般系耦接且设于一第一及第二阀112、114之间。于一实施例中，该第一及第二阀112、114系耦接至该罐体100，且适接于分离式配件(未示出)以便由该气体输送系统104移除与该罐体100连接之阀112、114。第三阀116系设于该第二阀114及该制程室106之间，以避免在罐体100由该气体输送系统104移除后把污染物引入制程室106。
第2A及2B图系说明该罐体100之一实施例之截面图。该罐体100大致包含一注射瓶或其他具有一外壳220之密闭式容器，其适合盛装一先趋物材料214(经由升华或蒸馏制程即可将先趋物材料形成制程气体)。某些可能会经由升华制程于罐体100中形成制程气体之固体先趋物材料214包括二氟化氙(xenon difluoride)、四羰化镍(nickel carbonyl)、六羰基钨(tungsten hexa-carbonyl)，尤其是五(二甲氨)钽(pentakis(dimethylamino)tantalum，PDMAT)。某些可能会经由蒸馏制程于罐体100中形成制程气体之液体先趋物材料包括四(二甲氨)钛(tetrakis(dimethylamino)titanium，TDMAT)、第三丁基亚氨三(二乙氨)钽(tertbutyliminotris(diethylamino)tantalum，TBTDET)以及五(甲乙氨)钽(pentakis(ethylmethylamino)tantalum，PEMAT)，及除此等以外之其他材料。该外壳220一般系由大致对先趋物材料214以及由其形成之气体呈惰性之材料制成，因此结构材料可依据形成之气体而改变。于一实施例中，六羰基钨系于该罐体100内形成，且该外壳220是由一大致对六羰基钨呈惰性之材料所制，例如不锈钢、铝、PFA或其他合适之无机材料。
该外壳220可为任何数目之几何形式。于第2A及2B图中所示之实施例中，该外壳220至少包含一柱形侧壁202及一底部232，其并由一盖子204封闭之。该盖子204可藉焊接、结合、黏结剂或其他非渗漏方法耦接至侧壁202。或者，该侧壁202及该盖子204间之接合部可为一封垫、O形环、衬垫或类似者，该结合部系经设置以避免由罐体100泄漏出。该侧壁202或者也可包含其他中空几何形式，例如一中空方形管。
一入口埠206及一出口埠208系穿设于该罐体，以让气体由该罐体100进出。该等埠206、208可穿设于该盖子204及/或该罐体100之侧壁202。该等埠206、208一般可予以封闭，以在将罐体100由气体输送系统104移除时可让罐体100内部与周围环境隔绝。于一实施例中，阀112、114系封闭地耦接至该等埠206、208，避免在将罐体100由气体输送系统104(示于第1图)移除以再填充先趋物材料214、或替换罐体时泄漏气体。相适之分离配件236A、236B也可耦接至阀112、114以便由该气体输送系统104移除或替换该罐体100。阀112、114一般为球形阀或其他确实的密封阀，以让罐体100可由系统移除以进行有效的装载及再利用，同时在填充、输送或耦接至气体输送系统104期间将由罐体100泄漏的可能性降至最低。或者，该罐体100可经由一再填充埠(未示出)再予填充，例如设于该罐体100之盖子204上具有VCR配件之小型管体。
该罐体100具有一内体积238，其包含一上方区域218及一下方区域234。该罐体100之下方区域234至少部份以先趋物材料214填充。或者，液体216也可加至一固体先趋物材料214以形成浆体212。该先趋物材料214、液体216或预混合之浆体212可藉移除该盖子204或经由该等埠206、208之一者而引入罐体100。该液体216系经选择以使其与先趋物材料214不具反应性、使先趋物材料214不溶于液体中、且液体216与该先趋物材料214相比具有一可忽略之蒸气压等特性。例如，一加至固体先趋物材料214(如六羰基钨)之液体216应具有一较六羰基钨高约1×103Torr之蒸气压，以确保升华之蒸气主要包含六羰基钨以及一可忽略之液体量。
与液体216混合之先趋物材料214可个别搅动以保持先趋物材料214悬浮在浆体212之液体216中。于一实施例中，先趋物材料214及液体216系藉磁性搅拌器240搅动。该磁性搅拌器240包括一设于该罐体100底部232下方之磁性马达242，以及一设于该罐体100下方区域234中之磁性片244。该磁性马达242可操作以旋转罐体100内之磁性片244，藉以混合该浆体212。该磁性片244之外材料涂层应与该先趋物材料214、液体216或罐体100不具反应性。合适之磁性混合物均已上市，例示性之磁性混合物为南加州威灵顿市之IKAWork公司所上市之IKAMAREO。或者，浆体212也可以其他方式搅动，例如藉一搅拌器、起泡器或类似者。
液体216之搅动会促使小滴液体216载附于载气中，并载送至制程室106。为避免上述小滴液体216接触制程室106，可选择性的将油气捕集器250耦接于罐体100之出口埠208。油气捕集器250包括一本体252，其中含数个插入式档板254，该等档板254延伸超过油气捕集器本体252之中线256，且呈至少略为朝向下方罐体100之角度。该等档板254可驱使气体绕该档板254之迂回路径流向该制程室106。该档板254之表面区域暴露一大表面积予该表面之流动气体，使油气捕集器可截补黏附之气体。档板254的向下角度可让任何累积于油气捕集器中之油气向下流动，并流回罐体100中。
该罐体100包括至少一档板210，设于该罐体100之上方区域218内。该档板210系设于入口埠206及出口埠208之间，形成一延伸之平均路径以避免载气直接(亦即沿笔直线路)由入口埠206流至出口埠208。此具有增加罐体100中载气之平均停留时间的效果，以及增加由载气载送之升华或汽化先趋物气体之量。此外，该档板210可引导载气覆盖于该罐体100中先趋物材料214的所有暴露表面，以确保可重复气体之形成特性以及该先趋物材料214之有效消耗量。
该档板210之数目、间距以及形状可作选择以将罐体100调整至形成先趋物气体之最佳状态。例如，可选择档板210之数目为最多量以提高先趋物材料214之载气速度、或档板210形状可配置以控制先趋物材料214之消耗量，以更有效使用先趋物材料。
档板210可接附至侧壁202或盖子204，或档板210可为一预制之插入型设计以安装于罐体100内。于一实施例中，设于罐体100内之档板210至少包含五片矩形板片，该等板片之材料与侧壁202相同。参照第2B图，该等档板210可以焊接或其他方式固定于该侧壁202，且彼此呈交叉状。该等档板210系以插入、交替形式固定于固定于该罐体之相对侧，以形成蜿蜒延伸之平均流动路径。此外，档板210系设于该盖子204(当放置于侧壁202上)上该入口埠206及该出口埠208之间，以使该等档板210及盖子204间没有空气可流动的空间。该等档板210可额外延伸至少一部份进入该罐体100之下方区域234，因此界定出一延伸之平均流动路径以供载气流经上方区域218。
或可选择的是，入口管222可设于该罐体100之内埠体积238。该管体222可藉第一端224耦接至该罐体100之入口埠206，并终止于该罐体100上方区域218中之第二端226。该管体222可将载气注入该罐体100上方区域218，即靠近该先趋物材料214或浆体212之位置处。
该先趋物材料214可于一预定温度及压力下形成一先趋物气体。由先趋物材料214升华或汽化之气体会累积在该罐体100之上方区域218中，并藉一通过入口埠206且由出口埠208离开的惰性载送气体(可载送至制程室106)清除之。于一实施例中，该先趋物材料214系藉一电阻加热器230(邻设于侧壁202处)加热至一预定义温度。或者，该先趋物材料214可以其他方式加热，例如可藉由设于该罐体100下方区域234或上方区域218之筒式加热器(未示出)、或以一置于该载气入口埠206上游处之加热器(未示出)预热该载气。为能使浆体212达最大均匀热分布，液体216及档板210应为热的良导体。
于一例示性之操作模式中，该罐体100之下方区域234系至少部份地填充予六羰基钨及扩散泵油(diffusion pump oil)之混合物所形成的浆体212。该浆体212系维持在约5 Torr之压力，并藉一电子式加热器230(邻设于该罐体100)加热至摄氏约40至约50度之温度范围。由氩气组成之载气以约200标准cc/分之速率流经入口埠206进入上方区域218。该氩气系以延伸之平均流动路径流动，而该平均流动路径系以经出口埠208离开罐体100之前通过档板210之曲折路径所定义之，较佳系增加罐体100上方区域218中氩气之平均停留时间。于罐体100中所增加之停留时间可有利的增加载气内升华之六羰基钨的饱和度。此外，通过档板210之曲折路径可有利的将所有先趋物材料214之暴露表面积实质的暴露于载气流，以使先趋物材料214之消耗量均匀，并形成先趋物气体。
第3图系描述用于形成制程气体之罐体300的另一实施例之截面图。该罐体包括一侧壁202、一盖子204及一底部232以围出一内部体积238。至少一盖子204或侧壁202包含入口埠206及一出口埠208用以进出气体。该罐体300之内部体积238系划分为上方区域218及一下方区域234。先趋物材料214至少部份地填充该下方区域234。先趋物材料214可为固体、液体或浆体形式，且系适于以升华及/或汽化形成制程气体。
管体302系设于该罐体300之内体积238中，且适于将该罐体300内之气流导离该先趋物材料214，较佳系避免由管体302流出之气体直接撞击先趋物材料214，而使微粒成为空气浮粒并载送至出口埠208进入制程处理室106。该管体302于第一端304耦接至入口埠206。该管体302由该第一端304延伸至第二端326A(位于先趋物材料214上方之上方区域218中)。该第二端326A可适于将气流导向侧壁202，因而避免气体直接(例如直线或视线可及的直线方式)流经该等埠206、208间的罐体300，形成延伸之平均流动路径。
于一实施例中，该管体302之第二端326A的出口306系相对于该罐体300之中心轴308呈约15至约90度角。于另一实施例中，该管体302具一「J」形第二端326B，以引导气流离开出口306而移向罐体300之盖子204。于另一实施例中，该管体302具有一第二端326C，其有一插塞或罩体310以封闭该管体302之一端。该第二端326C具有至少一开口328，其形成于该管体302邻近该罩体310之侧。由开口328离开之气体一般系以垂直于该中心轴308的方式引离位于罐体300下方区域234的先趋物材料214。亦可选择的是，前述至少一档板210(以虚线表示)可设于该处理室300内，并以并列形式应用于前述该管体302之任一实施例中。
于一例示性操作模式中，该罐体300之下方区域234系至少部份填充以六羰基钨以及扩散泵油之混合物所形成的浆体212。该浆体212系维持在约5Torr之压力，并以一电阻式加热器230(邻设于罐体300处)加热至摄氏约40至约50度。以氩气组成之载气系以约200标准cc/分之速率流经入口埠206及管体302而进入上方区域218。该管体302之第二端326A可将载气流以一延伸之平均流动路径(远离该出口埠208)流动，较佳系增加该罐体300之上方区域218中氩气的平均停留时间，并避免载气直接流动于该先趋物材料214之上，藉以尽量减少粒子形成。在罐体300中所增加的停留时间可有利的增加升华之六羰基钨于载气内的饱和度，同时减少粒子形成以改善制程良率，节省来源固体并减少下游处的污染物。
第4图系说明一用于形成先趋物气体之罐体400之另一实施例的截面图。该罐体400包括一侧壁202、一盖子204及一底部232以围出一内部体积238。至少一盖子204或侧壁202系包含一入口埠206及一出口埠208以供气体进出。入口及出口埠206、208系耦接至阀112、114(适接于相适之分离配件236A、236B)以便于由该气体输送系统104移除或替换该罐体400。亦可选择的是，油气捕集器250可耦接于该出口埠208及阀114之间，以捕集任何流至制程室106之气体中的油性粒子。
该罐体400之内体积238系划分为一上方区域218及一下方区域234。先趋物材料214及液体216至少部份填充该下方区域234。管体402系设于该罐体400之内部体积238中，且其适于将罐体400内之第一气流F1引离先趋物材料及液体混合物，并将一第二气流F2引经该混合物。该气流F1较气流F2为大。气流F2系经配置以扮演一起泡器的角色，其大小应足以搅动该先趋物材料及液体混合物、但不至于使先趋物材料214或液体216之粒子或微滴成为空气浮粒。因此，此实施例可有效的搅动先趋物材料及液体混合物，同时减少因管体402流出气流直接碰撞先趋物材料214形成的粒子成为空气浮粒，载送经出口埠208而进入制程室106。
该管体402系以一第一端404耦接至该入口埠206。该管体402系由该第一端404延伸至位于罐体400下方区域234(即位于先趋物材料及液体混合物内)之第二端406。该管体402具有一开口408，设于该罐体400之上方区域218中以将第一气流F1导向该罐体400之侧壁202。该管体400具有一限制部410，其设于该罐体400上方区域238中该开口408之下方处。该限制部410系用于减少流向管体402之第二端406并进入浆体212的第二气流F2。藉由调整该限制部的流量，该第一及第二气流F1及F2之相对速率便可作调节。此限制部具有至少两种用途，第一，可最小化该第二气流F2，提供恰巧足够的搅动以维持液体216中先趋物材料214之混合或悬浮，同时并减少粒子形成及制程室106之潜在污染。第二，第一气流F1可经调整以维持需提供由先趋物材料214升华及/或汽化至制程室106所需量的总流量体积。
亦可选择的是，前文所述之至少一档板210(以虚线图示)可设于该处理室400内，并以并列形式应用于前述该管体402之任一实施例中。
虽然前文所述系关于本发明之较佳实施例，然其他以及本发明更进一步之实施态样亦可于不悖离本发明基本范围的情况下提出。本发明之范围系由下文申请专利范围界定之。
主要原件代表符号说明
100  制程气体源罐体        102  载气源
104  气体输送系统          106  制程室
110  流量控制器            112  阀
114  阀                    120  制程系统
202  侧壁                  206  入口埠
208  出口埠                210  档板
214  先趋物材料            216  液体
218  上方区域              220  外壳
222  入口管                224  第一端
226  第二端                230  加热器
232  底部                  234  下方区域
236A 分离配件              236B 分离配件
238  内体积                240  搅拌器
242  马达                  244  磁性片
250  油性捕集器            252  油性捕集器本体
254  档板                  256  中线
300  罐体                  302  管体
304  第一端                306  出口
308  中心轴                310  罩体
326  第二端                328  开口
400  罐体                  402  管体
404  第一端                406  第二端
408  开口                  410  限制部

Claims (59)

1.一种形成用于一半导体制程系统之气体的设备，其至少包含：
一罐体，其具有一侧壁、一顶部及一底部以界定一内部体积，该内部体积具有一上方区域及一下方区域；
一入口埠及一出口埠，其穿设于该罐体并与该上方区域连通；
至少一档板，其系设于该罐体之上方区域内，且介于该入口埠及该出口埠之间；以及
一先趋物材料，至少部份填充该罐体之下方区域。
2.如权利要求1所述之设备，其特征在于该入口埠及该出口埠之至少一者系穿设于该罐体之该侧壁。
3.如权利要求1所述之设备，其特征在于该入口埠及该出口埠之至少一者系穿设于该罐体之顶部。
4.如权利要求3所述之设备，它还包含：
一第一阀，耦接于该入口埠；以及
一第二阀，耦接于该出口埠。
5.如权利要求1所述之设备，它还包含一管体，该管体具有一耦接至该入口埠之第一端以及一终止于该罐体之上方区域中的第二端。
6.如权利要求5所述之设备，其特征在于该第二端相对于该罐体之一轴系呈约15度至约90度角。
7.如权利要求5所述之设备，其特征在于该管体之该第二端系朝向该罐体之顶部。
8.如权利要求5所述之设备，其特征在于该管体之该第二端系被罩住且具有至少一出口开口，该出口开口系穿设于该管体之一壁且邻近该第二端。
9.如权利要求1所述之设备，它还包含一与该先趋物材料混合并形成一浆体之液体，其中该液体与该先趋物材料不具反应性，且相对于该先趋物材料具有一可忽略之蒸气压，同时该先趋物材料系不溶于其中。
10.如权利要求9所述之设备，其特征在于该先趋物材料系六羰基钨(tungstenhexacarbonyl)且该液体系一扩散泵油(diffusion pump oil)。
11.如权利要求9所述之设备，它还包含搅动装置，用于搅动该浆体。
12.如权利要求11所述之设备，其特征在于该搅动装置系选自由磁性搅拌器、搅拌器及起泡器组成之群组中。
13.如权利要求1所述之设备，其特征在于该先趋物材料系选自由二氟化氙(xenon difluoride)、四羰化镍(nickel carbonyl)、六羰基钨(tungsten hexa-carbonyl)，以及五(二甲氨)钽(pentakis(dimethylamino)tantalum)组成之群组中。
14.如权利要求1所述之设备，它还包含一耦接至该出口埠之油气捕集器。
15.如权利要求1所述之设备，其特征在于该至少一档板系指数片档板。
16.如权利要求15所述之设备，其特征在于该数片档板系至少部份延伸至该罐体之下方区域。
17.如权利要求1所述之设备，它还包含一加热装置，用于加热该先趋物材料。
18.如权利要求17所述之设备，其特征在于该用于加热该先趋物材料之加热装置系一电阻式加热器(邻设于该侧壁)、一设于该罐体内之筒式加热器，或为一预热载气之至少一者。
19.如权利要求1所述之设备，其特征在于该先趋物材料系选自由四(二甲氨)钛(tetrakis(dimethylamino)titanium，TDMAT)、第三丁基亚氨三(二乙氨)钽(tertbutyliminotris(diethylamino)tantalum，TBTDET)以及五(甲乙氨)钽(pentakis(ethylmethylamino)tantalum，PEMAT)所组成之群组中。
20.一种形成用于一半导体制程系统之气体的设备，其至少包含：
一罐体，具有一侧壁、一顶部及一底部以界定一内部体积，该内部体积具有一上方区域及一下方区域；
一入口埠及一出口埠，其穿设于该罐体并与该上方区域流通；
一管体，其具有一耦接至该入口埠之第一端以及一终止于该罐体之上方区域中的第二端；以及
一孔径，形成于该管体之第二端，其系朝向该罐体之侧壁或顶部。
21.如权利要求20所述之设备，其特征在于该入口埠及该出口埠之至少一者系穿设于该罐体之侧壁。
22.如权利要求20所述之设备，其特征在于该入口埠及该出口埠之至少一者系穿设于该罐体之顶部。
23.如权利要求22所述之设备，它还包含：
一第一阀，耦接至该入口埠；以及
一第二阀，耦接至该出口埠，该第一及第二阀系适接于相适之分离配件。
24.如权利要求20所述之设备，其特征在于形成于该第二端之孔径系相对于该罐体之一轴呈约15度至约90度角。
25.如权利要求20所述之设备，其特征在于形成于该管体第二端之孔径系朝向该罐体之顶部。
26.如权利要求20所述之设备，其特征在于该管体之第二端具有一封闭底部，且该孔径系穿设于该管体之一壁中且接近该第二端处。
27.如权利要求20所述之设备，它还包含一先趋物材料至少部份地填充该罐体之下方区域。
28.如权利要求20所述之设备，它还包含一与该先趋物材料混合并形成一浆体之液体，其中该液体与该先趋物材料不具反应性，且相对于该先趋物材料具有一可忽略之蒸气压，同时该先趋物材料系不溶于其中。
29.如权利要求28所述之设备，其特征在于该先趋物材料系选自由二氟化氙、四羰化镍、六羰基钨，以及五(二甲氨)钽组成之群组中。
30.如权利要求28所述之设备，其特征在于该先趋物材料系六羰基钨且该液体系一扩散泵油。
31.如权利要求28所述之设备，它还包含搅动装置，用于搅动该浆体。
32.如权利要求31所述之设备，其特征在于该搅动装置系选自由磁性搅拌器、搅拌器及起泡器组成之群组中。
33.如权利要求20所述之设备，它还包含一耦接至该出口埠之油气捕集器。
34.如权利要求20所述之设备，它还包含至少一档板设于该罐体之上方区域内，且介于该入口埠及该出口埠之间。
35.如权利要求34所述之设备，其特征在于该至少一档板系指数片档板。
36.如权利要求35所述之设备，其特征在于该数片档板系至少部份延伸至该罐体之下方区域。
37.如权利要求20所述之设备，它还包含一加热装置，用于加热该罐体之内部体积。
38.如权利要求37所述之设备，其特征在于该用于加热该罐体之内部体积的加热装置为一电阻式加热器(邻设于该侧壁)、一设于该罐体内之筒式加热器，或为一预热载气之至少一者。
39.如权利要求27所述之设备，其特征在于该先趋物材料系由四(二甲氨)钛(TDMAT)、第三丁基亚氨三(二乙氨)钽(TBTDET)以及五(甲乙氨)钽(PEMAT)所组成之群组中选出。
40.一种形成用于一制程系统之气体的设备，其至少包含：
一罐体，其具有一侧壁、一顶部及一底部以界定一内部体积，该内部体积具有一上方区域及一下方区域；
一入口埠及一出口埠，其穿设于该罐体并与该上方区域流通；
一第一阀，耦接至该入口埠；以及
一第二阀，耦接至该出口埠，该第一及第二阀系适配于相适之分离配件以将该设备由一半导体制程气体输送系统模组式移除；
一管体，其具有一耦接至该入口埠之第一端以及一终止于该罐体之上方区域中的第二端，其中该第二端相对于该罐体之一中心轴系呈约15度至约90度角；以及
数片档板，其设于该罐体之上方区域内，及介于该入口埠及该出口埠之间。
41.如权利要求420所述之设备，它还包含：
固体先趋物材料，其至少部份地填充该罐体之下方区域；
一液体，与该固体先趋物材料混合形成一浆体，其中该液体与该固体先趋物材料不具反应性，且相对于该固体先趋物材料具有一可忽略之蒸气压，同时该固体先趋物材料系不溶于其中；
加热装置，用于加热该罐体之内部体积；以及
搅动装置，用于搅动该浆体。
42.如权利要求41所述之设备，其特征在于用于加热该罐体之内部体积的加热装置为一电阻式加热器(邻设于该侧壁)、一设于该罐体内之筒式加热器，或为一预热载气之至少一者。
43.如权利要求42所述之设备，其特征在于该用于搅动该浆体的搅动装置系选自由磁性搅拌器、搅拌器及一起泡器组成之群组中。
44.一种形成用于一制程系统之气体的方法，其至少包含下列步骤：
提供一先趋物材料于一罐体之一下方区域中；
由一入口埠沿一延伸之平均路径流动一载气，使之经过该罐体之一上方区域而至一出口埠；以及
加热该先趋物材料以形成一制程气体。
45.如权利要求44所述之方法，其特征在于沿该延伸之平均路径流动载气之步骤更包含将一载气流引离该浆体。
46.如权利要求45所述之方法，其特征在于该气流系被导向该罐体之一侧壁。
47.如权利要求45所述之方法，其特征在于该气流系被导向该罐体之一顶部。
48.如权利要求45所述之方法，其特征在于该气流系被导经一或多个穿设于该管体之一侧壁的孔径。
49.如权利要求44所述之方法，其特征在于沿该延伸之平均路径流动该载气的步骤更包含将一载气流绕着设于该罐体之一入口埠及一出口埠间之至少一档板流动。
50.如权利要求49所述之方法，其特征在于该至少一档板为数片形成一蜿蜒路径之插入式档板。
51.如权利要求44所述之方法，其特征在于该加热步骤至少包含由加热该罐体、加热该罐体之一内部体积以及在进入该罐体前先加热该载气等加热步骤所组成之群组中选出至少一种。
52.如权利要求44所述之方法，它还包含搅动该先趋物材料之步骤。
53.如权利要求52所述之方法，其特征在于该搅动该先趋物材料之步骤系以一磁性搅拌器、一搅拌器或一起泡器之至少一者进行。
54.如权利要求52所述之方法，它还包含捕集搭载于制程气体中之粒子物质的步骤。
55.如权利要求44所述之方法，其特征在于该加热步骤更包含升华该先趋物材料。
56.一种形成一用于制程系统之气体的方法，其至少包含下列步骤：
流动一载气于数片档板间，该等档板可界定出一曲折流动路径；以及
由一设于该等档板间之先趋物材料形成一气体。
57.如权利要求56所述之方法，其特征在于形成一气体之步骤更包含升华该先趋物材料。
58.如权利要求57所述之方法，它还包含调整该等档板间之载气流动的步骤。
59.如权利要求58所述之方法，其特征在于该调整步骤更包含调整由档板数目、档板间距以及档板形状所组成之特性群组中之至少一者。
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