CN1714131A - 各向异性导电粘合剂及使用该粘合剂的电路连接方法和结构 - Google Patents

各向异性导电粘合剂及使用该粘合剂的电路连接方法和结构 Download PDF

Info

Publication number
CN1714131A
CN1714131A CNA03825610XA CN03825610A CN1714131A CN 1714131 A CN1714131 A CN 1714131A CN A03825610X A CNA03825610X A CN A03825610XA CN 03825610 A CN03825610 A CN 03825610A CN 1714131 A CN1714131 A CN 1714131A
Authority
CN
China
Prior art keywords
anisotropic
electroconductive adhesive
electroconductive
insulating
binder component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA03825610XA
Other languages
English (en)
Other versions
CN1304510C (zh
Inventor
卞廷日
李坰峻
郑在容
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Cable Ltd filed Critical LG Cable Ltd
Publication of CN1714131A publication Critical patent/CN1714131A/zh
Application granted granted Critical
Publication of CN1304510C publication Critical patent/CN1304510C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/002—Inhomogeneous material in general
    • H01B3/004—Inhomogeneous material in general with conductive additives or conductive layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29311—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29318—Zinc [Zn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29324—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29357—Cobalt [Co] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/2936—Iron [Fe] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29371—Chromium [Cr] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/2949—Coating material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0104—Properties and characteristics in general
    • H05K2201/0129—Thermoplastic polymer, e.g. auto-adhesive layer; Shaping of thermoplastic polymer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0224—Conductive particles having an insulating coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles

Abstract

本发明公开了一种各向异性导电粘合剂，其包括绝缘粘合剂组分，该组分包含自由基可聚合化合物和聚合引发剂；还包括多个分散于该绝缘粘合剂组分中的绝缘涂覆导电粒子，所述绝缘涂覆导电粒子在导电粒子的表面上具有由绝缘热塑性树脂构成的涂层，其中该绝缘热塑性树脂的软化点低于该绝缘粘合剂组分的放热峰值温度。该各向异性导电粘合剂使该绝缘粘合剂组分能够在低温下快速固化，并且由于即使当导电粒子聚集时其也可以防止电路短路而不导致电路连接故障，因此其对于制造电路连接结构非常有用。

Description

各向异性导电粘合剂及使用该粘合剂的电路连接方法和结构
技术领域
本发明涉及一种各向异性导电粘合剂及使用该粘合剂的电路连接方法和结构。更具体而言，本发明涉及一种各向异性导电粘合剂，其可以用于需要电连接精细模式电路(fine pattern circuits)的结构，例如LCD(液晶显示器)与柔性电路板或TAB(胶带自动粘结)膜之间的连接，或TAB膜与印刷电路板之间的连接，或半导体IC与IC-组装(IC-built)电路板之间的连接；本发明还涉及使用该粘合剂的电路连接方法和结构。
背景技术
最近以来，电子仪器随技术发展快速微型化，从而具有更小的厚度。这使得精细模式电路之间或精细模式电路与精密部件(minute part)之间的连接增加。各向异性导电粘合剂应用于那些连接。使用传统各向异性导电粘合剂连接精细模式电路的方法如下。
参阅图1，分别在上层板10的下表面和下层板20的上表面设置电路电极11和21，以便电路电极11和21彼此面对。将各向异性导电粘合剂30置于电路电极11和21之间，各向异性导电粘合剂30由绝缘粘合剂组分(component)40和多个分散于绝缘粘合剂组分40中的导电粒子(particles)50构成。然后，上层板10和下层板20在预定温度和压力下热压(thermo-compressed)。然后，置于电路电极11和21之间的导电粒子50使电路电极11和21如图2所示那样电连接。此外，还可以确保相邻的电路之间在热压过程中绝缘。当绝缘粘合剂组分40完全硬化时，上层板10和下层板20彼此牢固粘结。然而，如果分散在绝缘粘合剂组分40中的导电粒子50如图3中″A″所示那样聚集，那么传统各向异性导电粘合剂在相邻电路电极之间可以显示电连接，这可能引起短路。
在传统各向异性导电粘合剂中所用的粘合剂组分通常分为热塑型粘合剂组分和热固型粘合剂组分，其中前者具有通过加热和熔融产生的粘合性，后者具有通过加热和固化(curing)产生的粘合性。
如果使用热塑性树脂作为粘合剂组分的各向异性导电粘合剂被使用，则当粘合时需要将加热温度控制在树脂的熔点之上。然而，依照粘合剂的选择，在相对低的温度下使粘合对象连接是可能的，并且由于使用该粘合剂的连接并不伴随有化学反应，因而其花费较短时间来连接粘合对象。因此，能够抑制所连接的粘合对象的热损伤。然而，当使用该粘合剂进行电路连接时，因为连接部件的耐热性、耐湿性和耐化学性受限，所以可能产生与连接可靠性和稳定性相关的问题。
如果使用热固性树脂作为粘合剂组分的各向异性导电粘合剂被使用，则需要控制加热温度以与树脂的固化温度相同。此外，为了获得连接的足够粘合强度和可靠性，需要充分地进行固化反应，并需要将加热温度维持在150℃和200℃之间持续大约30秒。主要使用这一类各向异性导电粘合剂，因为在充分热固化之后其具有卓越的耐热性、耐湿性和耐化学性。
在热固性树脂中，主要使用环氧树脂基粘合剂。因为该粘合剂能够获得高粘合强度以及卓越的耐水性和耐热性，所以其在各种各样的应用中经常被使用，如电气、电子技术、建筑、汽车和飞行器。尤其是，鉴于一次填充(1-packing)型环氧树脂基粘合剂不必将粘合剂内的主要组分和固化剂混合、并且可以简化使用粘合剂，该粘合剂通常以膜、糊状物和粉末的形式使用。然而，虽然膜形式的环氧树脂基粘合剂具有卓越的加工性能，但是如果使用这样的膜型粘合剂，就需要将粘合剂在150℃～180℃加热持续约20秒的连接时间，并在180℃～210℃持续约10秒的连接时间。
此外，由于当前的环氧基粘合剂在高温下进行处理，该粘合剂给连接对象带来一些问题，例如热损伤以及由热膨胀和收缩造成的尺寸变化。另外，如果使用该粘合剂，为了提高该粘合剂的生产率，需要将连接时间减少到10秒或更短。
发明内容
本发明旨在解决现有技术的此类问题，因此本发明的一个目的是提供可靠的各向异性导电粘合剂，该粘合剂在短时间内确保电路连接，即使当导电粒子聚集时也能够防止短路，并且没有连接故障。
本发明的另一目的是提供一种使用该各向异性导电粘合剂的电路连接方法。
本发明的再一目的是提供一种使用该各向异性导电粘合剂的电路连接结构。
在本发明的一个方案中，提供一种各向异性导电粘合剂，其包括绝缘粘合剂组分，该组分包含自由基可聚合化合物和聚合引发剂；还包括多个分散于绝缘粘合剂组分中的绝缘涂覆导电粒子，绝缘涂覆导电粒子在导电粒子的表面上具有由绝缘热塑性树脂构成的涂层，其中绝缘热塑性树脂的软化点(softening point)低于绝缘粘合剂组分的放热峰值温度。
就在低温下快速固化而言，优选地，绝缘粘合剂组分的放热峰值温度范围为80℃～120℃。
另外，依照软化的涂层，鉴于涂层和彼此面对电极间电连接的绝缘，由绝缘热塑性树脂构成的涂层优选具有0.01μm～10μm的厚度。
为达成本发明的另一个目的，本发明还提供一种电路连接方法，其包括如下步骤：(a)置于包括绝缘粘合剂组分的各向异性导电粘合剂，该组分包含自由基可聚合化合物和聚合引发剂；该各向异性导电粘合剂还包括多个分散于绝缘粘合剂组分中的绝缘涂覆导电粒子，绝缘涂覆导电粒子在导电粒子的表面上具有由绝缘热塑性树脂构成的涂层，其中绝缘热塑性树脂的软化点低于绝缘粘合剂组分的放热峰值温度，而在电路板之间分别具有彼此面对的电路电极；(b)通过在导电粒子的表面上移除一部分绝缘热塑性树脂涂层，而使彼此面对的电路电极电连接，其中导电粒子通过热压与彼此面对的电路电极相接触；和(c)固化绝缘粘合剂组分以便电路电极粘合并固定。
为达成本发明的再一目的，本发明还提供一种电路连接结构，其中各向异性导电粘合剂置于电路板之间，而电路板分别具有彼此面对的电路电极以便电路电极彼此电连接，该各向异性导电粘合剂包括绝缘粘合剂组分，该组分包含自由基可聚合化合物和聚合引发剂；该各向异性导电粘合剂还包括多个分散于绝缘粘合剂组分中的绝缘涂覆导电粒子，绝缘涂覆导电粒子在导电粒子的表面上具有由绝缘热塑性树脂构成的涂层，其中绝缘热塑性树脂的软化点低于绝缘粘合剂组分的放热峰值温度。
附图说明
本发明优选实施例的这些及其它特征、方案和优点将在以下详细说明中结合附图给予更加充分的阐述。在附图中：
图1为示出置于具有彼此面对的电路电极的电路板之间的传统各向异性导电粘合剂的示意图；
图2为示出使用传统各向异性导电粘合剂电连接的电路连接结构的示意图；
图3为用于示出使用传统各向异性导电粘合剂电连接的电路连接结构的短路的示意图；
图4为示出按照本发明实施例的各向异性导电粘合剂的剖面图；
图5为示出分散于本发明各向异性导电粘合剂内的绝缘涂覆导电粒子的剖面图；
图6为示出按照本发明置于具有彼此面对的电路电极的电路板之间的各向异性导电粘合剂的示意图；以及
图7为示出使用本发明的各向异性导电粘合剂电连接的电路连接结构的示意图。
具体实施方式
以下，将详细阐述按照本发明的各向异性导电粘合剂、使用该粘合剂的电路连接方法和电路连接结构。
在按照本发明的各向异性导电粘合剂内，粘合剂组分被用来提供基板之间的牢固粘合。该组分包含自由基可聚合化合物和聚合引发剂。鉴于在低温下快速固化和贮藏性质，优选的是，该组分的放热峰值温度在80℃与120℃之间。
自由基可聚合化合物是具有官能团的材料，官能团通过自由基聚合。除单体之外，如同化合物，低聚物可以单独使用或与单体结合使用。自由基可聚合化合物例如包括：丙烯酸酯基或甲基丙烯酸酯基化合物，如丙烯酸甲酯，丙烯酸乙酯，双酚A乙二醇改性二丙烯酸酯(diacrylate)，乙二醇异氰脲酸酯改性二丙烯酸酯，三丙二醇(tripropylene glycol)二丙烯酸酯，四甘醇二丙烯酸酯，聚乙二醇二丙烯酸酯，季戊四醇三丙烯酸酯，三羟甲基丙烷三丙烯酸酯，三羟甲基丙烷丙二醇三丙烯酸酯，三羟甲基丙烷乙二醇三丙烯酸酯，乙二醇异氰脲酸酯改性三丙烯酸酯，二季戊四醇五丙烯酸酯，二季戊四醇六丙烯酸酯，季戊四醇四丙烯酸酯，二环戊烯基(dicyclopentenyl)丙烯酸酯，三环癸烯基(tricyclodecanyl)丙烯酸酯。尤其是，优选使用含二环戊烯基和/或三环癸烯基和/或三嗪环的丙烯酸酯基或甲基丙烯酸酯基化合物，因为其具有高热阻。另外，自由基可聚合化合物是：马来酰亚胺化合物，不饱和聚酯，丙烯酸，醋酸乙烯酯，丙烯腈，甲基丙烯腈等等，其可以单独使用或相互结合使用。
聚合引发剂实现的功能是活化任何自由基可聚合化合物以形成高分子网状结构或高分子IPN结构。当形成这样的交联结构时，固化绝缘粘合剂组分。热聚合引发剂和/或光聚合引发剂可以用作聚合引发剂。尽管引发剂的含量可以按照自由基可聚合化合物的种类和电路所需粘合工序的可靠性和工作性质而变化，然而对于每100wt％的自由基可聚合化合物，引发剂优选为0.1～10wt％。
热聚合引发剂是通过加热分解并产生自由基的化合物。引发剂是过氧化合物(peroxide compound)、偶氮基化合物等，尤其是优选使用有机过氧化物。有机过氧化物中具有过氧(O-O)键，并通过加热产生自由基，随后表现出活性。有机过氧化物分成：过氧化酮，过氧化酮缩醇(peroxyketal)，氢过氧化物，二烷基过氧化物，过氧化二酰，过氧化碳酸酯，过氧化酯等等。过氧化酮包括过氧化环己酮、过氧化甲基环己酮等；过氧化酮缩醇包括1，1-二(叔-丁基过氧环己酮)、1，1-二(叔-丁基过氧-3，3，5-三甲基环己酮)等；氢过氧化物包括叔-过氧化氢丁酯、氢过氧化枯烯等；二烷基过氧化物包括过氧化异丙苯(dicumyl peroxide)、二-叔-丁基过氧化物等；过氧化二酰包括月桂酰过氧化物、过氧化苯甲酰等；过氧化二碳酸酯包括二异丙基过氧化二碳酸酯、二-(4-叔-丁基环己基)过氧化二碳酸酯等；而过氧化酯包括叔-丁基过氧化苯甲酸酯、叔-丁基过氧化(2-己酸乙酯)、叔-丁基过氧化异丙基碳酸酯、1，1，3，3-四甲基丁基过氧化-2-己酸乙酯等。鉴于涉及存储、固化和粘合性能的平衡，优选使用过氧化酮缩醇和过氧化酯。此外，无机过氧化物类热聚合引发剂包括过硫酸钾和过硫酸铵盐等；偶氮基热聚合引发剂包括偶氮二异丁腈，2，2′-偶氮二-2-甲基丁腈和4，4-偶氮二-4-氰戊酸(cyanovalericacid)。上述热聚合引发剂单独使用或相互组合使用。考虑到所需的连接温度、连接时间、有效时间(available time)等，通过选择适当的热聚合引发剂，能够在短时间内固化自由基可聚合化合物。
此外，光聚合引发剂可以用来代替热聚合引发剂。按照自由基可聚合化合物，多种光聚合引发剂可以组合使用，其包括羰基化合物，含硫化合物，偶氮基化合物等。
在按照本发明的各向异性导电粘合剂内，为增强粘合性能和可靠性，绝缘粘合剂组分可以与环氧树脂、环氧基固化剂、酚醛树脂和酚基固化剂以及自由基可聚合材料和聚合引发剂一起使用。基于100wt％的自由基可聚合化合物，优选加入20-200wt％的绝缘粘合剂组分。
此外，在按照本发明的各向异性导电粘合剂内，绝缘粘合剂组分优选包含热塑性树脂。尽管当前环氧基粘合剂内所用的树脂可被用作热塑性树脂，但是为快速固化尤其优选使用与自由基可聚合化合物相容的树脂。此类热塑性树脂是：苯乙烯一丁二烯共聚物，苯乙烯-异戊二烯共聚物，苯乙烯-丁二烯饱和共聚物，苯乙烯-异戊二烯饱和共聚物，苯乙烯-乙烯-丁烯-苯乙烯共聚物，丙烯腈-丁二烯共聚物，甲基丙烯酸甲酯聚合物，丙烯酸橡胶，聚氨酯树脂，苯氧基树脂，聚酯树脂，聚苯乙烯树脂，聚乙烯醇缩丁醛树脂，聚乙烯醇缩甲醛，聚酰胺，聚酰亚胺，热塑性环氧树脂和酚醛树脂等等。为增强粘合性能，优选使用聚氨酯树脂或苯氧基树脂。各向异性导电粘合剂可以用上述热塑性树脂以膜的形式生产。在这种情况下，如果热塑性树脂在其端处有羟基或羧基，热塑性树脂优选地提供改善的粘合性能。这些热塑性树脂可以单独使用或组合使用。混合到自由基可聚合化合物的热塑性树脂的量的比率优选为从10/90到90/10，更优选为从30/70到70/30。
此外，必要时，填充物、软化剂、助催化剂(promoter)、着色剂(coloringagent)、耐火剂(flame-resistant agent)、光稳定剂、偶合剂、阻聚剂等可以加到按照发明的各向异性导电粘合剂。例如，当加入填充物时，连接可靠性改善。此外，当加入偶合剂时，各向异性导电粘合剂粘合表面的粘合性能得以改善，并且粘合强度、热阻或防潮性可被改善以增加连接可靠性。此类偶合剂尤其是硅烷偶联剂，例如β-(3，4-环氧环己基)乙基三甲氧基硅烷、γ-巯基丙基(mercaptopropyl)三甲氧基硅烷、γ-甲基丙烯酰氧基丙基三甲氧基硅烷等。
组成按照本发明的各向异性导电粘合剂的绝缘涂覆导电粒子由下列工序制备。
如果能够确保电路间的电连接，那么所有的涂覆有绝缘热塑性树脂的导电粒子都可以使用。例如，如图5(a)和图5(b)所示，金属如镍、铁、铜、铝、锡、锌、铬、钴、银、金等，或本身具有导电性的粒子如金属氧化物、焊料(solder)、碳等可以用作导电粒子。另外，这样的粒子可以用作导电粒子151，即该粒子在核心材料153的表面上通过层形成方法如化学镀(electroless plating)而形成金属薄层154，核心材料153例如是玻璃、陶瓷、聚合物等。尤其是，导电粒子中在每一个聚合核心材料的表面上形成金属薄层，这样的导电粒子在加压工序中在压力方向变形，以增加与电极的接触面积，以便改善电连接的可靠性。聚合核心材料可以用各种丙烯酸酯制备，例如：聚乙烯，聚丙烯，聚苯乙烯，甲基丙烯酸甲酯-苯乙烯共聚物，丙烯腈-苯乙烯共聚物，丙烯腈-丁二烯-苯乙烯共聚物，聚碳酸酯和聚甲基丙烯酸甲酯；聚乙烯醇缩丁醛，聚乙烯醇缩甲醛，聚酰亚胺，聚酰胺，聚酯，聚氯乙烯；各种聚合树脂例如：氟树脂，尿素树脂，三聚氰胺树脂，苯代三聚氰胺树脂，酚-甲醛树脂(phenol-formalin resin)，酚醛树脂，二甲苯树脂，二芳基邻苯二甲酸酯树脂，环氧树脂，聚异氰酸酯树脂，苯氧基树脂，硅酮树脂。这些树脂可以单独使用或至少两种树脂结合使用。此外，必要时，能够使用具有交联结构的聚合树脂，而交联结构是通过加入添加剂例如交联剂和固化剂然后使其反应而产生的。核心材料可以由下列方法生产，这些方法例如：乳液聚合，悬浮聚合，非水分散聚合(non-aqueous dispersionpolymerization)，分散聚合，界面聚合(interface polymerization)，原位聚合(in-situ polymerization)，浸液涂漆内固化(curing-in-solution coating)，溶液内干燥(drying-in-solution)，融化-分散冷却(melting-dispersioncooling)，喷雾干燥等。导电粒子优选具有比电路电极的间距更小的特定直径。特定直径优选为0.1-50μrn，更优选为1-20μm，最优选为2-10μn。
在导电粒子表面上形成的涂层材料同时具有绝缘性和热塑性。如果树脂的软化点比绝缘涂覆导电粒子分散其中的绝缘粘合剂组分的放热峰值温度低，那么这样的树脂全部都可以使用。绝缘热塑性树脂包括：聚乙烯和其共聚物，聚苯乙烯和其共聚物，聚甲基丙烯酸甲酯和其共聚物，聚氯乙烯和其共聚物，聚碳酸酯和其共聚物，聚丙烯和其共聚物，丙烯酸酯基橡胶(esteracrylate based rubber)，聚乙烯醇缩醛，聚乙烯醇缩丁醛，丙烯腈-丁二烯共聚物，苯氧基树脂，热塑性环氧树脂，聚氨基甲酸酯等。这些树脂可以单独使用，或至少两种树脂结合使用，或适当改性后使用。
公知的涂覆方法，例如静电喷涂、热融化涂覆(thermal-melting coating)、溶液涂布(solution application)和干混合方法，可以用作在导电粒子表面上形成含绝缘热塑性树脂的涂层的方法。例如，在导电粒子上涂覆绝缘热塑性树脂的方法如下所述，其中通过溶液涂布在树脂粒子表面上形成金属薄层。首先，为了将上面形成有金属薄层的树脂粒子与涂覆于其上的绝缘热塑性树脂容易地结合，将粒子表面用偶合剂处理，例如硅烷偶联剂或钛基偶合剂。例如，如果将其中在树脂粒子表面形成金属薄层的导电粒子均匀地分散入硅烷偶联剂溶液，并搅拌大约一小时然后干燥，从而获得用硅烷偶联剂处理过表面的导电粒子。接着，将表面处理过的导电粒子溶解并均匀地分散到绝缘热塑性树脂溶液，该绝缘热塑性树脂溶液将被按规定时间涂覆到表面处理过的导电粒子。然后，在滴下(dropped)绝缘热塑性树脂溶液并同时用均质器(homogenizer)均匀分散并随后冷冻干燥后，涂覆有绝缘热塑性树脂的绝缘涂覆导电粒子得以获得。
绝缘热塑性树脂涂层的厚度优选为0.01-10μm，更优选为0.05-5μm，最优选为0.2-2μm，其厚度与绝缘粒子特定直径的比率优选为1/100-1/5，相比较更优选为1/50-1/10。如果绝缘热塑性树脂涂层的厚度太薄，绝缘性能下降；而如果太厚，即使在热压中，绝缘涂层在与电路电极相接触的压力方向上也不会移除，而这将导致导通(continuity)失败。
绝缘涂覆导电粒子的含量优选为绝缘粘合剂组分的0.1～30wt％到100wt％。由于在导电粒子表面上形成的绝缘涂层，即使导电粒子聚集，在导电粒子间也没有产生任何电连接从而不会因此而短路。基于这个理由，绝缘涂覆导电粒子的比率可以增加直到绝缘粘合剂组分重量份的1/3。
以下，使用按照本发明的各向异性导电粘合剂连接电路的操作如下所述。
参阅图4，多个绝缘涂覆导电粒子150分散入绝缘粘合剂组分140，其中在导电粒子151表面上形成由绝缘热塑性树脂构成的涂层152。在导电粒子151表面上形成的形成涂层152的绝缘热塑性树脂具有比绝缘粘合剂组分140的放热峰值温度低的软化点。这里，放热峰值温度意味着这样的最大放热温度，即从附近(vicinities)以10℃/min的比率增加粘合剂组分的温度并用DSC(差分扫描量热计)测定的最大放热温度。换言之，在放热峰值温度，反应最突然。然后如下使用各向异性导电粘合剂130连接电路。
首先，上述各向异性导电粘合剂130置于上层板10和下层板20之间，两板分别具有彼此面对的电路电极11和21(参见图6)。
接着，如果以预定温度和压力热压，绝缘粘合剂组分140固化之前涂层152内的绝缘热塑性树脂软化。从而，涂层152沿压力方向与电路电极11和21接触的部分被移除，随后电路电极11和21通过导电粒子151实现电连接。另一方面，虽然被软化，但不在压力方向上的涂层152不会脱离导电粒子151的表面。因而，即使绝缘涂覆导电粒子150聚集，相邻电极之间仍然保持绝缘。这可以防止短路。如果在导电粒子151上形成的组成涂层152的绝缘热塑性树脂的软化点高于绝缘粘合剂组分140的放热峰值温度，绝缘粘合剂组分140将在涂层152软化之前固化，所以在压力方向上与电路电极11和21相接触的涂层未被移除，从而导致短路。
然后，绝缘粘合剂组分140完全固化，以便上层板10和下层板20牢固地粘合并固定。通过上述工序，可以提供具有高可靠性的电路连接结构，其中两彼此面对的电路电极使用按照本发明的各向异性导电粘合剂电连接。
以下，本发明的实施例将详细加以阐述。然而，本发明的实施例可以多种方式变更，因而不应当将本发明的范围解释为局限于那些实施例。本发明的实施例仅仅用于向本领域普通技术人员提供更好的对于本发明的说明。
第一实施例
绝缘涂覆导电粒子的制备
由金属涂覆树脂粒子制成的导电粒子(由Sekisui Chemical制造，商标为Micropearl AU205TM，5.0μm)放入5wt％的丙酮溶液，即3-甲基丙烯酰氧基丙基三甲氧基硅烷(由Aldrich制造)，并均匀地分散于其中，然后干燥以获得表面处理的导电粒子。接着，将3g表面处理的导电粒子加入到溶液中，其中3g聚苯乙烯(由Nova Chemical制造，商标为STYROSUN 2158TM，软化点为96℃)溶于15g的n-正己烷。然后，将溶液慢慢加入到含非离子乳化剂(单月桂酸山梨醇酐酯)的100g溶液同时用均质器均匀混合，然后冷冻干燥以获得绝缘涂覆导电粒子，其为用聚苯乙烯涂覆的导电粒子。此处，涂层的厚度为0.7μm。
各向异性导电粘合剂的制备
50g的苯氧基树脂(Inchem Co.制造，商标PKHCTM，平均分子量为45,000)溶入混合溶液，混合溶液中甲苯(沸点：110.6℃，SP(溶度参数)值8.90)和丙酮(沸点：56.1℃，SP值10.0)以重量比50∶50混合，以此制备包含40％固体的的溶液。接着，调配溶液以使溶液按照固体重量比含：50g的苯氧基树脂，50g的三羟基乙基乙二醇二甲基丙烯酸酯树脂(由Kyoeisha Chemical制造，80MFATM)作为自由基可聚合化合物，以及3g叔-过氧丁基-2-己酸乙二酯(由SEKI ATOFINA制造，商标Ruperox 26TM)作为聚合引发剂，从而制造绝缘粘合剂组分。然后，3wt％如上制备的绝缘涂覆导电粒子混合入100wt％的此种粘合剂组分，并均匀分散以制造各向异性导电粘合剂。然后，用敷帖器(applicator)将各向异性导电粘合剂涂覆在50μm厚的PET膜上，其中一面进行过表面处理，然后使用70℃热风干燥10分钟以获得各向异性导电粘合剂膜，其中粘合层厚度为35μm。此处，绝缘粘合剂组分的放热峰值温度测定为107℃。
第二实施例
50g的苯氧基树脂(Inchem Co.制造，商标PKHCTM，平均分子量为45,000)溶入混合溶液，混合溶液中甲苯(沸点：110.6℃，SP值8.90)和丙酮(沸点：56.1℃，SP值10.0)以重量比50∶50混合，以此制备包含40％固体的的溶液。接着，将溶液调配为按固体重量比含：50g的苯氧基树脂，30g的三羟基乙基乙二醇二甲基丙烯酸酯树脂(由Kongyoungsa Fat&Oil制造，80MFATM)，1.8g的叔-过氧丁基-2-己酸乙酯(由Segiatopina制造，Ruperox26TM)，20g的热固性酚醛树脂(phenol resin)(由Kolon Chemical制造，商标为KRD-HM2TM)，以及1g的固化剂(六亚甲基四胺，HMTA)，从而制造绝缘粘合剂组分。然后，3wt％第一实施例的绝缘涂覆导电粒子混合入100wt％的此种粘合剂组分，并均匀分散以制造各向异性导电粘合剂。然后，用敷帖器将各向异性导电粘合剂涂覆在PET膜上，其中50μm厚的一面进行异性处理(hetero-treated)，然后使用70℃热风干燥10分钟以获得各向异性导电粘合剂膜，其中粘合层厚度为35μm。此处，绝缘粘合剂组分的放热峰值温度测定为109℃。
对比例1
以与第一实施例同样的方法制造各向异性导电粘合剂膜，区别之处在于以具有122℃软化点的聚苯乙烯(由Nova Chemical制造，DYLARK 232TM)代替第一实施例具有96℃软化点的聚苯乙烯(由Nova Chemical制造，STYROSUN 2158TM)。
由第一、第二实施例和对比例1制造的各向异性导电粘合剂膜分别置于柔性印刷电路(FPC)之间，该柔性印刷电路包括500个铜电路，而该铜电路为50μm线宽(line width)、100μm节距(pitch)和18μm厚。将各向异性导电粘合剂膜的粘合表面附着到FPC的一面，然后以70℃的温度和5kg/cm2的压力热压5秒钟，以此通过2mm宽度临时连接。然后，分离PET膜以便各向异性导电粘合剂膜连接到FPC的另外一面，从而连接电路。接着，膜以160℃的温度和30kg/cm2的压力热压10秒钟，以此制造电路连接结构。
对于如上制造的电路连接结构，在65℃和95％相对湿度的条件下过1000小时后测定粘合强度、连接阻抗(connection resistance)和连接阻抗可靠性。测定结果在以下表格1中列示。
表格1
  粘合强度(g/cm) 连接阻抗(Ω) 连接阻抗可靠性(Ω)
  第一实施例   815   1.0   4.0
  第二实施例   950   1.1   4.3
  对比例1   812   24.0   N/A
参见表格1，很清楚使用按照本发明第一和第二实施例的各向异性导电粘合剂的电路连接结构显示优良的粘合强度、连接阻抗和连接阻抗可靠性。
另一方面，估计对比例1显示高连接阻抗是因为组成导电粒子绝缘涂层的聚苯乙烯树脂具有122℃的软化点，而该软化点比绝缘粘合剂组分的放热峰值温度107℃更高，因此粘合剂组分在绝缘涂覆导电粒子的绝缘涂层软化并充分移除之前被固化。
工业实用性
如上所述，因为在低温下能够快速固化，本发明的各向异性导电粘合剂可以显著增加生产效率。此外，因为即使当导电粒子聚集时仍然可以防止电路短路而不导致连接故障，所以本发明的各向异性导电粘合剂对于制造电路连接结构非常有用。
本发明已经详细阐述。然而，应当理解在指出本发明的优选实施例时仅仅是通过例证说明的方式给出详细说明和特定例子，因为在本发明精神和范围内的各种变化和修改对本领域普通技术人员依据该详细说明是显而易见的。

Claims (10)

1.一种各向异性导电粘合剂，包括：
绝缘粘合剂组分，该组分包含自由基可聚合化合物和聚合引发剂；以及
多个分散于该绝缘粘合剂组分中的绝缘涂覆导电粒子，所述绝缘涂覆导电粒子在导电粒子的表面上具有由绝缘热塑性树脂构成的涂层；
其中该绝缘热塑性树脂的软化点低于该绝缘粘合剂组分的放热峰值温度。
2.如权利要求1所述的各向异性导电粘合剂，其中该绝缘粘合剂组分的放热峰值温度范围为80℃～120℃。
3.如权利要求1所述的各向异性导电粘合剂，其中由该绝缘热塑性树脂构成的涂层具有0.01μm～10μm的厚度。
4.如权利要求1或3所述的各向异性导电粘合剂，其中所述导电粒子是通过在核心材料的表面上形成金属薄层而制成。
5.如权利要求1或2所述的各向异性导电粘合剂，其中该绝缘粘合剂组分进一步包含热固性树脂和固化剂。
6.如权利要求1所述的各向异性导电粘合剂，其中该自由基可聚合化合物是丙烯酸酯基或甲基丙烯酸酯基化合物。
7.如权利要求1或2所述的各向异性导电粘合剂，其中该聚合引发剂是有机过氧化物。
8.如权利要求1或2所述的各向异性导电粘合剂，其中该绝缘粘合剂组分进一步包含热塑性树脂。
9.一种电路连接方法，包括如下步骤：
(a)将各向异性导电粘合剂置于到分别具有电路电极的电路板之间，所述电路电极彼此面对，该各向异性导电粘合剂包括绝缘粘合剂组分，该组分包含自由基可聚合化合物和聚合引发剂；该各向异性导电粘合剂还包括多个分散于该绝缘粘合剂组分中的绝缘涂覆导电粒子，所述绝缘涂覆导电粒子在导电粒子的表面上具有由绝缘热塑性树脂构成的涂层，其中该绝缘热塑性树脂的软化点低于该绝缘粘合剂组分的放热峰值温度；
(b)通过移除一部分在导电粒子表面上的绝缘热塑性树脂涂层，使彼此面对的电路电极电连接，所述导电粒子通过热压与彼此面对的电路电极相接触；以及
(c)固化该绝缘粘合剂组分，以便所述电路电极粘合和固定。
10.一种电路连接结构，其中将权利要求1所述的各向异性导电粘合剂置于分别具有电路电极的电路板之间，所述电路电极彼此面对，以便所述电路电极彼此电连接。
CNB03825610XA 2002-12-13 2003-07-29 各向异性导电粘合剂及使用该粘合剂的电路连接方法和结构 Expired - Fee Related CN1304510C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020020079857 2002-12-13
KR1020020079857A KR20040052126A (ko) 2002-12-13 2002-12-13 이방 도전성 접착제, 이를 이용한 회로 접속 방법 및 회로접속 구조체

Publications (2)

Publication Number Publication Date
CN1714131A true CN1714131A (zh) 2005-12-28
CN1304510C CN1304510C (zh) 2007-03-14

Family

ID=36165425

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB03825610XA Expired - Fee Related CN1304510C (zh) 2002-12-13 2003-07-29 各向异性导电粘合剂及使用该粘合剂的电路连接方法和结构

Country Status (7)

Country Link
US (1) US20060054277A1 (zh)
JP (1) JP2006509884A (zh)
KR (1) KR20040052126A (zh)
CN (1) CN1304510C (zh)
AU (1) AU2003256092A1 (zh)
TW (1) TWI276674B (zh)
WO (1) WO2004055126A1 (zh)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7703997B2 (en) 2006-01-18 2010-04-27 Visera Technologies, Co., Ltd. Image sensor module having precise image-projection control
CN102461349A (zh) * 2009-06-15 2012-05-16 住友电气工业株式会社 电极连接方法、电极连接结构、用于电极连接的导电粘合剂、以及电子装置
CN102533195A (zh) * 2010-12-31 2012-07-04 第一毛织株式会社 各向异性导电膜
CN102884590A (zh) * 2010-07-28 2013-01-16 积水化学工业株式会社 带有绝缘性粒子的导电性粒子、带有绝缘性粒子的导电性粒子的制造方法、各向异性导电材料及连接结构体
CN102959641A (zh) * 2010-07-02 2013-03-06 积水化学工业株式会社 带有绝缘性粒子的导电性粒子、各向异性导电材料及连接结构体
CN104106182A (zh) * 2012-02-20 2014-10-15 迪睿合电子材料有限公司 各向异性导电连接材料、连接结构体、连接结构体的制造方法和连接方法
CN111052881A (zh) * 2017-09-11 2020-04-21 日立化成株式会社 电路连接用粘接剂膜及其制造方法、电路连接结构体的制造方法、以及粘接剂膜收纳组件
CN114170923A (zh) * 2021-12-09 2022-03-11 武汉华星光电半导体显示技术有限公司 显示面板

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6641315B2 (en) * 1997-07-15 2003-11-04 Silverbrook Research Pty Ltd Keyboard
US7791860B2 (en) 2003-07-09 2010-09-07 Maxwell Technologies, Inc. Particle based electrodes and methods of making same
US7342770B2 (en) * 2003-07-09 2008-03-11 Maxwell Technologies, Inc. Recyclable dry particle based adhesive electrode and methods of making same
US7352558B2 (en) 2003-07-09 2008-04-01 Maxwell Technologies, Inc. Dry particle based capacitor and methods of making same
US7295423B1 (en) * 2003-07-09 2007-11-13 Maxwell Technologies, Inc. Dry particle based adhesive electrode and methods of making same
US20060147712A1 (en) * 2003-07-09 2006-07-06 Maxwell Technologies, Inc. Dry particle based adhesive electrode and methods of making same
US20050266298A1 (en) * 2003-07-09 2005-12-01 Maxwell Technologies, Inc. Dry particle based electro-chemical device and methods of making same
US7508651B2 (en) * 2003-07-09 2009-03-24 Maxwell Technologies, Inc. Dry particle based adhesive and dry film and methods of making same
US20070122698A1 (en) 2004-04-02 2007-05-31 Maxwell Technologies, Inc. Dry-particle based adhesive and dry film and methods of making same
US7920371B2 (en) 2003-09-12 2011-04-05 Maxwell Technologies, Inc. Electrical energy storage devices with separator between electrodes and methods for fabricating the devices
US7495349B2 (en) * 2003-10-20 2009-02-24 Maxwell Technologies, Inc. Self aligning electrode
US7384433B2 (en) * 2004-02-19 2008-06-10 Maxwell Technologies, Inc. Densification of compressible layers during electrode lamination
US7090946B2 (en) * 2004-02-19 2006-08-15 Maxwell Technologies, Inc. Composite electrode and method for fabricating same
US20060246343A1 (en) * 2004-04-02 2006-11-02 Maxwell Technologies, Inc. Dry particle packaging systems and methods of making same
KR100601341B1 (ko) * 2004-06-23 2006-07-14 엘에스전선 주식회사 이방 도전성 접착제 및 이를 이용한 접착필름
KR100622598B1 (ko) * 2004-12-08 2006-09-19 엘에스전선 주식회사 피티씨 특성을 갖는 이방 도전성 접착제
US7440258B2 (en) 2005-03-14 2008-10-21 Maxwell Technologies, Inc. Thermal interconnects for coupling energy storage devices
US7492574B2 (en) * 2005-03-14 2009-02-17 Maxwell Technologies, Inc. Coupling of cell to housing
JP4900554B2 (ja) * 2005-03-30 2012-03-21 ソニーケミカル＆インフォメーションデバイス株式会社 熱硬化型異方性導電接着剤
CN102510661B (zh) * 2005-05-11 2014-11-19 日立化成株式会社 各向异性导电薄膜及使用该薄膜的电路板
KR100811430B1 (ko) * 2005-12-20 2008-03-07 제일모직주식회사 속경화형 이방성 도전 접착 필름용 조성물 및 이를 이용한이방성 도전 접착 필름
US7647210B2 (en) * 2006-02-20 2010-01-12 Ford Global Technologies, Llc Parametric modeling method and system for conceptual vehicle design
US8518573B2 (en) * 2006-09-29 2013-08-27 Maxwell Technologies, Inc. Low-inductive impedance, thermally decoupled, radii-modulated electrode core
KR100841193B1 (ko) * 2006-12-21 2008-06-24 제일모직주식회사 카르복실 변성 폴리 아세탈 수지를 사용하는 이방 도전성접착제 조성물 및 이를 이용한 접착필름
US7727423B2 (en) * 2006-12-29 2010-06-01 Cheil Industries, Inc. Anisotropic conductive film composition and film including the same
US20080204973A1 (en) * 2007-02-28 2008-08-28 Maxwell Technologies, Inc. Ultracapacitor electrode with controlled iron content
US20080201925A1 (en) * 2007-02-28 2008-08-28 Maxwell Technologies, Inc. Ultracapacitor electrode with controlled sulfur content
KR100871760B1 (ko) * 2007-04-13 2008-12-05 엘에스엠트론 주식회사 이방 도전성 접착용 도전볼
KR100871759B1 (ko) * 2007-04-13 2008-12-05 엘에스엠트론 주식회사 이방 도전성 접착용 도전볼
US20100123258A1 (en) * 2008-11-14 2010-05-20 Myung Jin Yim Low Temperature Board Level Assembly Using Anisotropically Conductive Materials
JP2010121007A (ja) * 2008-11-18 2010-06-03 Sumitomo Electric Ind Ltd 異方導電性フィルム
WO2010125966A1 (ja) * 2009-04-28 2010-11-04 日立化成工業株式会社 異方導電粒子
JP5303489B2 (ja) * 2010-02-16 2013-10-02 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8427775B2 (en) * 2010-06-30 2013-04-23 HGST Netherlands B.V. Particle-capturing device including a component configured to provide an additional function within an enclosure exclusive of capturing particles
WO2013181211A1 (en) * 2012-05-30 2013-12-05 Exatec, Llc Plastic assembly, methods of making and using the same, and articles comprising the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03223380A (ja) * 1990-01-30 1991-10-02 Oki Electric Ind Co Ltd 異方性導電接着剤
JPH08325543A (ja) * 1995-06-05 1996-12-10 Soken Chem & Eng Co Ltd 異方導電性接着剤
JP3928753B2 (ja) * 1996-08-06 2007-06-13 日立化成工業株式会社 マルチチップ実装法、および接着剤付チップの製造方法
JPH11236540A (ja) * 1998-02-23 1999-08-31 Sumitomo Bakelite Co Ltd 異方導電性接着剤
JP3679618B2 (ja) * 1998-08-25 2005-08-03 積水化学工業株式会社 絶縁被覆導電性微粒子、異方性導電接着剤及び導電接続構造体
JP2000169821A (ja) * 1998-09-30 2000-06-20 Three Bond Co Ltd 紫外線硬化性異方導電接着剤
JP3816254B2 (ja) * 1999-01-25 2006-08-30 京セラケミカル株式会社 異方性導電接着剤

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7703997B2 (en) 2006-01-18 2010-04-27 Visera Technologies, Co., Ltd. Image sensor module having precise image-projection control
CN102461349A (zh) * 2009-06-15 2012-05-16 住友电气工业株式会社 电极连接方法、电极连接结构、用于电极连接的导电粘合剂、以及电子装置
US9226406B2 (en) 2009-06-15 2015-12-29 Sumitomo Electric Industries, Ltd. Electrode connection method, electrode connection structure, conductive adhesive used therefor, and electronic device
CN102959641B (zh) * 2010-07-02 2013-12-11 积水化学工业株式会社 带有绝缘性粒子的导电性粒子、各向异性导电材料及连接结构体
CN102959641A (zh) * 2010-07-02 2013-03-06 积水化学工业株式会社 带有绝缘性粒子的导电性粒子、各向异性导电材料及连接结构体
CN102884590A (zh) * 2010-07-28 2013-01-16 积水化学工业株式会社 带有绝缘性粒子的导电性粒子、带有绝缘性粒子的导电性粒子的制造方法、各向异性导电材料及连接结构体
CN102884590B (zh) * 2010-07-28 2014-01-15 积水化学工业株式会社 带有绝缘性粒子的导电性粒子、带有绝缘性粒子的导电性粒子的制造方法、各向异性导电材料及连接结构体
CN102533195B (zh) * 2010-12-31 2014-07-23 第一毛织株式会社 各向异性导电膜
CN102533195A (zh) * 2010-12-31 2012-07-04 第一毛织株式会社 各向异性导电膜
CN104106182A (zh) * 2012-02-20 2014-10-15 迪睿合电子材料有限公司 各向异性导电连接材料、连接结构体、连接结构体的制造方法和连接方法
CN111052881A (zh) * 2017-09-11 2020-04-21 日立化成株式会社 电路连接用粘接剂膜及其制造方法、电路连接结构体的制造方法、以及粘接剂膜收纳组件
CN111052881B (zh) * 2017-09-11 2024-02-13 株式会社力森诺科 电路连接用粘接剂膜及其制造方法、电路连接结构体的制造方法、以及粘接剂膜收纳组件
CN114170923A (zh) * 2021-12-09 2022-03-11 武汉华星光电半导体显示技术有限公司 显示面板

Also Published As

Publication number Publication date
WO2004055126A1 (en) 2004-07-01
US20060054277A1 (en) 2006-03-16
TW200416268A (en) 2004-09-01
AU2003256092A1 (en) 2004-07-09
JP2006509884A (ja) 2006-03-23
TWI276674B (en) 2007-03-21
KR20040052126A (ko) 2004-06-19
CN1304510C (zh) 2007-03-14

Similar Documents

Publication Publication Date Title
CN1304510C (zh) 各向异性导电粘合剂及使用该粘合剂的电路连接方法和结构
CN100491489C (zh) 各向异性的导电性粘接剂以及应用该粘接剂的薄膜
US8395052B2 (en) Conductive particle, anisotropic conductive film, joined structure, and joining method
KR20110056555A (ko) 접착제 필름
TWI468487B (zh) An anisotropic conductive material, a method for manufacturing the same, and a structure thereof and a method for manufacturing the same
KR101254474B1 (ko) 회로 접속 재료 및 접속 구조체
KR20110057253A (ko) 회로 접속 구조체
JP5621320B2 (ja) 接続構造体の製造方法
JPH07105716A (ja) 被覆粒子および異方導電性接着剤
KR100710957B1 (ko) 이방 도전성 접착제, 이를 이용한 회로 접속 방법 및 회로 접속 구조체
JP5044880B2 (ja) 樹脂組成物、これを用いた回路部材接続用接着剤及び回路板
JP5613220B2 (ja) 電子部品接続材料及び接続構造体
JP7020029B2 (ja) 導電性接着フィルム
JP4539813B2 (ja) 絶縁被覆導電粒子
JP2001156430A (ja) 回路板の製造方法及び回路接続材料
KR100871503B1 (ko) 이방 도전성 접착제, 이를 이용한 회로 접속 방법 및 회로접속 구조체
KR102228473B1 (ko) 재생 전자 부품의 제조 방법 및 접속 구조체
JP2003198119A (ja) 回路接続材料及びそれを用いた回路接続体の製造方法
KR102174943B1 (ko) 도전입자, 도전재료 및 접속 구조체
JP5796232B2 (ja) 導電性粒子、異方性導電材料及び接続構造体
JP3856213B2 (ja) 表面処理配線板、それを用いた電極の接続方法並びに電極の接続構造
KR100719807B1 (ko) 절연 도전성 미립자 및 이를 이용한 이방 도전성 필름
KR102169554B1 (ko) 접착제, 및 전자 부품의 접속 방법
JP2000285730A (ja) 回路板
JPH11154687A (ja) 回路板

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: LG INNOTEK CO., LTD.

Free format text: FORMER OWNER: LG CABLE LTD.

Effective date: 20100324

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: SEOUL, SOUTH KOREA TO: SEOUL CITY, SOUTH KOREA

TR01 Transfer of patent right

Effective date of registration: 20100324

Address after: Seoul, South Korea

Patentee after: IG Innotek Co., Ltd.

Address before: Seoul, South Kerean

Patentee before: LG Cable Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20070314

Termination date: 20170729