CN1742343A - 有机存储单元及其驱动电路 - Google Patents

有机存储单元及其驱动电路 Download PDF

Info

Publication number
CN1742343A
CN1742343A CNA2004800027653A CN200480002765A CN1742343A CN 1742343 A CN1742343 A CN 1742343A CN A2004800027653 A CNA2004800027653 A CN A2004800027653A CN 200480002765 A CN200480002765 A CN 200480002765A CN 1742343 A CN1742343 A CN 1742343A
Authority
CN
China
Prior art keywords
organic
field effect
storage unit
capacitor
effect tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2004800027653A
Other languages
English (en)
Other versions
CN1742343B (zh
Inventor
沃尔夫冈·克莱门斯
沃尔特·菲克斯
阿克塞尔·格尔特
安德烈亚斯·厄尔曼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pollick And AG Co GmbH
PolyIC GmbH and Co KG
Original Assignee
Pollick And AG Co GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pollick And AG Co GmbH filed Critical Pollick And AG Co GmbH
Publication of CN1742343A publication Critical patent/CN1742343A/zh
Application granted granted Critical
Publication of CN1742343B publication Critical patent/CN1742343B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/80—Interconnections, e.g. terminals

Abstract

本发明涉及有机存储单元和其驱动电路。有机存储单元具有可双稳态转换的材料层或包括一个电路，该电路中两个OFET串联连接且一个OFET与其低电势侧的电容并联，使得电容器与放电OFET并联连接且通过第二OFET充电。

Description

有机存储单元及其驱动电路
技术领域
本发明涉及一种有机存储单元及其驱动电路。
背景技术
例如在DE 10045192.6中公开了有机物基存储单元。
对于许多基于有机电子器件的应用，需要有机、一次写入或可重写存储器(例如，在RFID标签或在简单的电子游戏中)。最重要的，对于比如电子条形码或水印来说，非易失存储器是不可缺少的。
公知基于铁电材料的无源有机存储单元(Electronic Design，August 20，2001，page 56)(在该文献中提出了“聚合物铁电RAM”等)。这涉及到非易失的存储矩阵装配系统，还涉及由外部电路，优选为常规硅电路控制的系统。
这里的缺点为存储单元的控制，其通过外部电路操作。
发明内容
因此，本发明的一个目的是提供一种有机物基非易失存储单元，其在没有外部电路的情况下可读且可重复写。
本发明涉及一种有机物基存储单元，其包括至少一个有机功能层，其中可以双稳态地转换一性能(诸如介电常数、电导率、磁导率)。本发明还涉及一种有机电容存储器，其通过包括电容器的电路设置来实现，其中两个有机场效应晶体管(OFET)串联连接且电容与有机场效应晶体管之一并联连接，该有机场效应晶体管为放电有机场效应晶体管。
有机存储单元包括至少以下的功能层：(诸)下电极；绝缘体，可选地具有集成的存储材料；和上电极。
依据本发明的一个实施例，简单地通过增加施加到上电极的电压写入存储单元。
依据本发明的另一实施例，存储单元集成在有机场效应晶体管(OFET)中。
依据另一实施例，电容器组件充当存储器。
对于存储单元，需要一种材料，其中可以通过外部影响双稳态地转换某些性能(例如，电导率、介电常数或磁导率)，即，可以有效地传输至少两个状态且这些状态在时间上保持稳定。另外，有机存储单元包括进一步的元件，通过它可以读和改变双稳态材料的状态。优选地，读取不改变双稳态材料的状态。
附图说明
参考示出本发明的实施例的三个附图在以下更详细地描述本发明。
图1显示了集成在OFET中的存储器；
图2显示了充当存储器的电容器；和
图3显示了包括充当存储器的电容器的电路布置。
具体实施方式
在图1中，示意地示出OFET的横截面，其显示了例如聚酯膜的衬底1，向衬底1以有结构的形式涂布源极/漏极电极2。这可以例如通过印刷或光刻的方法执行。下电极2(源极/漏极)埋入半导体层3中，其被绝缘层4覆盖。这些层可以又通过印刷、刮刀涂布、离心沉积或喷涂涂布。由于一些其物理性能，诸如介电常数、电导率和/或磁导率可以双稳态转换的材料还具有绝缘特性，所以存储器可以与绝缘层4相同。在OFET组件中的层5则不需要且栅电极可以直接连接到绝缘层4。但是，另一方面，也可以存在附加的可选的非常薄的层5，其由双稳态转换材料构成且其位于绝缘层4下方或上方。最后，在双稳态转换材料4的绝缘层上或者附着于其的层5上设置上栅电极6。可以通过对源极/漏极电极施加电压读取双稳态转换层5的状态。通过对栅电极6施加电压可以编写(program)层5中的状态。
图2显示了如何使用电容器组件作为存储器：具有可变介电常数的介质层5夹在下电极2和上电极6之间。于是层5中具有可调介电常数的材料位于衬底1上两个导电层-下电极2和上电极6之间。介电常数可以通过高电压的方法转换。然后通过电容的充电电流判定存储状态，其当然依据介电常数为高或低。
所使用的具有可转换介电常数的材料可以是例如聚偏二氯乙烯(PVDC)或聚偏二氟乙烯(PVDF)。在这些材料的情况中，介电常数通过高电场转换。
图3显示了具有充当存储器的电容器的电路设置。该有机存储器单元或该有机电容存储器可以在不需要特殊材料的情况下利用以下电路实现：两个OFET9、10串联连接，且电容器，或更准确地，存储电容器11与放电OFET10并联连接。充电OFET由9指示而放电OFET由10指示。供给电压施加到7和8。在7处供给电压低，而在8处供给电压高。可以通过向输入13施加短脉冲对电容器11充电，而向输入12施加短脉冲对电容器11放电。输入12连接到放电OFET 10且输入13连接到充电OFET 9。存储器的状态可以在存储单元的输出14查询，例如通过另一OFET的方法。
本发明涉及有机存储单元和其驱动电路。有机存储单元具有可双稳态转换材料的层或包括一个电路，在该电路中两个OFET串联连接且一个OFET与其低电势侧的电容器并联，使得电容器与放电OFET并联连接且通过第二OFET充电。
这里描述的有机存储单元的主要优点在于它们可以容易地纳入有机或聚合物电子电路中，因为它们构造简单，可以容易地集成入生产工艺中。生产工艺可以容易地组合。另一优点在于存储单元的控制简单，另一重要的优点为该存储单元是非易失的。

Claims (5)

1.一种有机物基存储单元，包括至少一个可双稳态转换的有机功能层，其性能(诸如介电常数、电导率、和/或磁导率)可以双稳态地转换。
2.如权利要求1所述的存储单元，其中，除了绝缘层之外，所述可双稳态转换的有机功能层集成在有机场效应晶体管中。
3.如权利要求1所述的存储单元，其中，所述可双稳态转换的有机功能层具有绝缘性能，且用于有机场效应晶体管中作为绝缘层。
4.如权利要求2或3所述的存储单元，其中，所述可双稳转换的有机功能层在施加电势的条件下改变其介电常数。
5.一种有机电容存储单元，通过包括电容器的电路布置实现，其中，两个有机场效应晶体管串联连接且一电容器与所述有机场效应晶体管之一并联连接，这一有机场效应晶体管是放电有机场效应晶体管。
CN2004800027653A 2003-01-29 2004-01-14 有机存储单元及其驱动电路 Expired - Fee Related CN1742343B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10303445.5 2003-01-29
DE10303445 2003-01-29
PCT/EP2004/000221 WO2004068534A2 (de) 2003-01-29 2004-01-14 Organisches speicherbauelement und ansteuerungsschaltung dazu

Publications (2)

Publication Number Publication Date
CN1742343A true CN1742343A (zh) 2006-03-01
CN1742343B CN1742343B (zh) 2011-10-19

Family

ID=32797281

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2004800027653A Expired - Fee Related CN1742343B (zh) 2003-01-29 2004-01-14 有机存储单元及其驱动电路

Country Status (10)

Country Link
US (1) US20070051940A1 (zh)
EP (1) EP1588375B1 (zh)
JP (1) JP2006519483A (zh)
KR (1) KR100749126B1 (zh)
CN (1) CN1742343B (zh)
AT (1) ATE476739T1 (zh)
CA (1) CA2515614A1 (zh)
DE (1) DE502004011477D1 (zh)
MX (1) MXPA05007878A (zh)
WO (1) WO2004068534A2 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4893908B2 (ja) * 2004-03-25 2012-03-07 独立行政法人産業技術総合研究所 情報記録素子
NO20041733L (no) * 2004-04-28 2005-10-31 Thin Film Electronics Asa Organisk elektronisk krets med funksjonelt mellomsjikt og fremgangsmate til dens fremstilling.
US7956352B2 (en) * 2005-03-25 2011-06-07 Semiconductor Energy Laboratory Co., Ltd. Memory element comprising an organic compound and an insulator
CN101167189B (zh) 2005-04-27 2013-09-18 株式会社半导体能源研究所 半导体器件的制造方法
DE102005030627A1 (de) 2005-06-30 2007-01-04 Bundesdruckerei Gmbh Sicherheits- oder Wertdokument mit einer Einrichtung zur kontaktlosen Kommunikation mit einem externen Lese- und/oder Schreibgerät
JP4893912B2 (ja) * 2005-09-02 2012-03-07 独立行政法人産業技術総合研究所 情報記録素子
JP5459894B2 (ja) * 2005-12-27 2014-04-02 株式会社半導体エネルギー研究所 半導体装置
CN101401209B (zh) * 2006-03-10 2011-05-25 株式会社半导体能源研究所 存储元件以及半导体器件
US7719001B2 (en) * 2006-06-28 2010-05-18 Semiconductor Energy Laboratory Co., Ltd Semiconductor device with metal oxides and an organic compound
EP1883109B1 (en) * 2006-07-28 2013-05-15 Semiconductor Energy Laboratory Co., Ltd. Memory element and method of manufacturing thereof
US7988057B2 (en) * 2006-11-28 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US7679951B2 (en) * 2007-12-21 2010-03-16 Palo Alto Research Center Incorporated Charge mapping memory array formed of materials with mutable electrical characteristics
DE102008039473A1 (de) 2008-08-25 2010-03-18 Polyic Gmbh & Co. Kg Mehrschichtiges Folienelement
KR102089347B1 (ko) 2013-10-08 2020-03-16 경북대학교 산학협력단 비휘발성 메모리 소자 및 이의 제조 방법

Family Cites Families (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3769096A (en) * 1971-03-12 1973-10-30 Bell Telephone Labor Inc Pyroelectric devices
JPS60246098A (ja) * 1984-05-04 1985-12-05 アドバンスト・マイクロ・デイバイシズ・インコーポレーテツド プログラマブルリードオンリメモリ
DE3768112D1 (de) * 1986-03-03 1991-04-04 Toshiba Kawasaki Kk Strahlungsdetektor.
US5892244A (en) * 1989-01-10 1999-04-06 Mitsubishi Denki Kabushiki Kaisha Field effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor
US5206525A (en) * 1989-12-27 1993-04-27 Nippon Petrochemicals Co., Ltd. Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials
FR2664430B1 (fr) * 1990-07-04 1992-09-18 Centre Nat Rech Scient Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques.
JP2660111B2 (ja) * 1991-02-13 1997-10-08 株式会社東芝 半導体メモリセル
US5408109A (en) * 1991-02-27 1995-04-18 The Regents Of The University Of California Visible light emitting diodes fabricated from soluble semiconducting polymers
KR940006711B1 (ko) * 1991-09-12 1994-07-25 포항종합제철 주식회사 델타도핑 양자 우물전계 효과 트랜지스터의 제조방법
JPH0770470B2 (ja) * 1991-10-30 1995-07-31 フラウンホファー・ゲゼルシャフト・ツール・フォルデルング・デル・アンゲバンテン・フォルシュング・アインゲトラーゲネル・フェライン 照射装置
JP2709223B2 (ja) * 1992-01-30 1998-02-04 三菱電機株式会社 非接触形携帯記憶装置
JPH05347422A (ja) * 1992-06-16 1993-12-27 Fujitsu Ltd 二安定ダイオード
JP3457348B2 (ja) * 1993-01-15 2003-10-14 株式会社東芝 半導体装置の製造方法
FR2701117B1 (fr) * 1993-02-04 1995-03-10 Asulab Sa Système de mesures électrochimiques à capteur multizones, et son application au dosage du glucose.
US5567550A (en) * 1993-03-25 1996-10-22 Texas Instruments Incorporated Method of making a mask for making integrated circuits
AU7563294A (en) * 1993-08-24 1995-03-21 Metrika Laboratories, Inc. Novel disposable electronic assay device
JP3460863B2 (ja) * 1993-09-17 2003-10-27 三菱電機株式会社 半導体装置の製造方法
FR2710413B1 (fr) * 1993-09-21 1995-11-03 Asulab Sa Dispositif de mesure pour capteurs amovibles.
US5556706A (en) * 1993-10-06 1996-09-17 Matsushita Electric Industrial Co., Ltd. Conductive layered product and method of manufacturing the same
WO1995031833A2 (en) * 1994-05-16 1995-11-23 Philips Electronics N.V. Semiconductor device provided with an organic semiconductor material
JP3246189B2 (ja) * 1994-06-28 2002-01-15 株式会社日立製作所 半導体表示装置
US5574291A (en) * 1994-12-09 1996-11-12 Lucent Technologies Inc. Article comprising a thin film transistor with low conductivity organic layer
US5630986A (en) * 1995-01-13 1997-05-20 Bayer Corporation Dispensing instrument for fluid monitoring sensors
US5652645A (en) * 1995-07-24 1997-07-29 Anvik Corporation High-throughput, high-resolution, projection patterning system for large, flexible, roll-fed, electronic-module substrates
US6072454A (en) * 1996-03-01 2000-06-06 Kabushiki Kaisha Toshiba Liquid crystal display device
JP3080579B2 (ja) * 1996-03-06 2000-08-28 富士機工電子株式会社 エアリア・グリッド・アレイ・パッケージの製造方法
DE19629656A1 (de) * 1996-07-23 1998-01-29 Boehringer Mannheim Gmbh Diagnostischer Testträger mit mehrschichtigem Testfeld und Verfahren zur Bestimmung von Analyt mit dessen Hilfe
US6344662B1 (en) * 1997-03-25 2002-02-05 International Business Machines Corporation Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages
US5946551A (en) * 1997-03-25 1999-08-31 Dimitrakopoulos; Christos Dimitrios Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric
KR100248392B1 (ko) * 1997-05-15 2000-09-01 정선종 유기물전계효과트랜지스터와결합된유기물능동구동전기발광소자및그소자의제작방법
JP4509228B2 (ja) * 1997-08-22 2010-07-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 有機材料から成る電界効果トランジスタ及びその製造方法
WO1999013441A2 (en) * 1997-09-11 1999-03-18 Precision Dynamics Corporation Radio frequency identification tag on flexible substrate
US5997817A (en) * 1997-12-05 1999-12-07 Roche Diagnostics Corporation Electrochemical biosensor test strip
WO1999030432A1 (en) * 1997-12-05 1999-06-17 Koninklijke Philips Electronics N.V. Identification transponder
JPH11242207A (ja) * 1997-12-26 1999-09-07 Sony Corp 電圧発生回路、光学空間変調素子、画像表示装置並びに画素の駆動方法
US6083104A (en) * 1998-01-16 2000-07-04 Silverlit Toys (U.S.A.), Inc. Programmable toy with an independent game cartridge
AU739848B2 (en) * 1998-01-28 2001-10-18 Thin Film Electronics Asa A method for generation of electrical conducting or semiconducting structures in three dimensions and methods for erasure of the same structures
US6087196A (en) * 1998-01-30 2000-07-11 The Trustees Of Princeton University Fabrication of organic semiconductor devices using ink jet printing
US6045977A (en) * 1998-02-19 2000-04-04 Lucent Technologies Inc. Process for patterning conductive polyaniline films
US6033202A (en) * 1998-03-27 2000-03-07 Lucent Technologies Inc. Mold for non - photolithographic fabrication of microstructures
US5967048A (en) * 1998-06-12 1999-10-19 Howard A. Fromson Method and apparatus for the multiple imaging of a continuous web
JP3620310B2 (ja) * 1998-10-16 2005-02-16 富士ゼロックス株式会社 パルス発生装置および画像記録装置
US6321571B1 (en) * 1998-12-21 2001-11-27 Corning Incorporated Method of making glass structures for flat panel displays
US6517955B1 (en) * 1999-02-22 2003-02-11 Nippon Steel Corporation High strength galvanized steel plate excellent in adhesion of plated metal and formability in press working and high strength alloy galvanized steel plate and method for production thereof
AU5646800A (en) * 1999-03-02 2000-09-21 Helix Biopharma Corporation Card-based biosensor device
US6207472B1 (en) * 1999-03-09 2001-03-27 International Business Machines Corporation Low temperature thin film transistor fabrication
US6383664B2 (en) * 1999-05-11 2002-05-07 The Dow Chemical Company Electroluminescent or photocell device having protective packaging
US6340822B1 (en) * 1999-10-05 2002-01-22 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
US6335539B1 (en) * 1999-11-05 2002-01-01 International Business Machines Corporation Method for improving performance of organic semiconductors in bottom electrode structure
US6284562B1 (en) * 1999-11-17 2001-09-04 Agere Systems Guardian Corp. Thin film transistors
DE10033112C2 (de) * 2000-07-07 2002-11-14 Siemens Ag Verfahren zur Herstellung und Strukturierung organischer Feldeffekt-Transistoren (OFET), hiernach gefertigter OFET und seine Verwendung
US7875975B2 (en) * 2000-08-18 2011-01-25 Polyic Gmbh & Co. Kg Organic integrated circuit completely encapsulated by multi-layered barrier and included in RFID tag
DE10045192A1 (de) * 2000-09-13 2002-04-04 Siemens Ag Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers
NO20005980L (no) * 2000-11-27 2002-05-28 Thin Film Electronics Ab Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling
JP4244525B2 (ja) * 2001-03-09 2009-03-25 株式会社日立製作所 薄膜トランジスタ基板の製造方法
US6870180B2 (en) * 2001-06-08 2005-03-22 Lucent Technologies Inc. Organic polarizable gate transistor apparatus and method
JP2003089259A (ja) * 2001-09-18 2003-03-25 Hitachi Ltd パターン形成方法およびパターン形成装置
DE10156470B4 (de) * 2001-11-16 2006-06-08 Infineon Technologies Ag RF-ID-Etikett mit einer Halbleiteranordnung mit Transistoren auf Basis organischer Halbleiter und nichtflüchtiger Schreib-Lese-Speicherzellen
US6812509B2 (en) * 2002-06-28 2004-11-02 Palo Alto Research Center Inc. Organic ferroelectric memory cells
US6870183B2 (en) * 2002-11-04 2005-03-22 Advanced Micro Devices, Inc. Stacked organic memory devices and methods of operating and fabricating

Also Published As

Publication number Publication date
EP1588375A2 (de) 2005-10-26
WO2004068534A3 (de) 2004-12-09
CN1742343B (zh) 2011-10-19
US20070051940A1 (en) 2007-03-08
MXPA05007878A (es) 2006-02-08
EP1588375B1 (de) 2010-08-04
ATE476739T1 (de) 2010-08-15
WO2004068534A8 (de) 2005-02-03
DE502004011477D1 (de) 2010-09-16
CA2515614A1 (en) 2004-08-12
KR20050111582A (ko) 2005-11-25
KR100749126B1 (ko) 2007-08-13
WO2004068534A2 (de) 2004-08-12
JP2006519483A (ja) 2006-08-24

Similar Documents

Publication Publication Date Title
CN1742343A (zh) 有机存储单元及其驱动电路
RU2714307C2 (ru) Устройство актюации
CN100403450C (zh) 具有自组装聚合物薄膜的内存装置及其制造方法
JP5960905B2 (ja) 液体の接触角及び接触面積の変化を用いたエネルギー転換装置
Yu et al. Harvesting energy from low-frequency excitations through alternate contacts between water and two dielectric materials
JP5638511B2 (ja) 不揮発性メモリ機能を有する電界効果型半導体の電子又は光電子能動デバイス及びその製造方法
Sun et al. Bioinspired tribotronic resistive switching memory for self-powered memorizing mechanical stimuli
CN1691334A (zh) 利用具有分级电阻变化的多层的存储器件
Chung et al. Enhanced output performance on LbL multilayer PVDF-TrFE piezoelectric films for charging supercapacitor
CN101061629A (zh) 用于切换多个开关电压电平的变换器电路
JP2006245280A5 (zh)
KR100966301B1 (ko) 강유전체 메모리장치의 제조방법
CN102959850B (zh) 半导体器件和静电致动器的驱动方法
CN1447434A (zh) 强电介质存储装置
KR920008939A (ko) 다층 콘덴서 유전체막이 있는 반도체장치 및 그 제어방법
CN100338776C (zh) 铁电门器件
RU2723889C2 (ru) Устройство актуатора на основе электроактивного полимера
Jaafar et al. Printed and flexible organic and inorganic memristor devices for non-volatile memory applications
CN1960146A (zh) 一种电荷泵装置
EP2124517A3 (de) Elektrisches Speichersystem mit Doppelschichtkodensatoren
WO2010031416A1 (en) Capacitive method of mechanical energy conversion into electric energy and capacitive high voltage dc generator
Ghasemi et al. Polymeric memory capacitor based on polarization effect fabricated by direct UV cross-linking method
KR20130063365A (ko) 에너지 수확 소자 및 이를 제조하는 방법
Abunahla et al. AMemImp: Novel Analog Memimpedance Device and Circuits for MAC Unit
RU2737791C2 (ru) Устройство привода, имеющее в своем составе электроактивный полимерный привод, и способ управления

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20111019

Termination date: 20150114

EXPY Termination of patent right or utility model