CN1755498A - Photonic MEMS and structures - Google Patents

Abstract

An optical device includes a non-transparent substrate. The optical device further includes a first optical layer which is at least partially transmissive and at least partially reflective to incident light. The optical device further includes a second optical layer which is at least partially reflective to incident light. The second optical layer is spaced from the first optical layer. At least one of the first optical layer and the second optical layer is movable between a first position with a first distance between the first and second optical layers and a second position with a second distance between the first and second optical layers. Movement of the at least one of the first optical layer and the second optical layer between the first and second positions modulates the reflectivity of the device.

Description

Photonic MEMS and structure

Technical field

The present invention relates to MEMS (micro electro mechanical system) (MEMS).

Background technology

MEMS (micro electro mechanical system) (MEMS) comprises micromechanical component, driver and electronic equipment.Micromechanical component can adopt deposition, etching or other several portions that can etch away substrate and/or institute's deposited material layer maybe can add several layers and make with the micromachined technology that forms electric and electromechanical assembly.One type MEMS device is called as interferometric modulator.As used herein, term interferometric modulator or interferometric light modulator refer to utilize the principle of optical interference optionally to absorb and/or catoptrical device.In certain embodiments, interferometric modulator can comprise the pair of conductive plate, one of them or the two can be transparently whole or in part and/or reflection, and can when applying a suitable electric signal, make relative motion.In a specific embodiment, a plate can comprise a quiescent layer that is deposited on the substrate, and another plate can comprise a metal film that separates with described quiescent layer by air gap.In the describing in detail of this paper, plate can change the optical interference that is incident on the light on the described interferometric modulator with respect to the position of another plate.Said apparatus is with a wide range of applications, and in this technology, utilizes and/or revises the characteristic of these types of devices so that its characteristic can be used for improving existing product and makes still undeveloped at present new product will be rather useful.

Summary of the invention

In certain embodiments, optical devices comprise an opaque substrate.Described optical devices further comprise one first optical layers, its transmission and reflect incident light at least in part at least in part.Described optical devices further comprise one second optical layers, and it reflects incident light at least in part.Described second optical layers and first optical layers are spaced apart.In described first optical layers and described second optical layers at least one can move between the second place that has a second distance between first optical layers and second optical layers in the primary importance that has one first distance between first optical layers and second optical layers and one.The reflectivity of the mobile modulation described device of at least one in described first optical layers and described second optical layers between the primary importance and the second place.

In certain embodiments, optical devices comprise and are used for catoptrical first member.The transmission and reflect incident light at least in part at least in part of described first reflecting member.Described optical devices further comprise and are used for catoptrical second member.Described second reflecting member reflects incident light at least in part.Described second reflecting member and described first reflecting member are spaced apart.In described first reflecting member and described second reflecting member at least one can move between the second place that has a second distance between first reflecting member and second reflecting member in the primary importance that has one first distance between first reflecting member and second reflecting member and one.The reflectivity of the mobile modulation described device of at least one in described first reflecting member and described second reflecting member between the primary importance and the second place.Described optical devices further comprise at least one the member that is used for supporting first reflecting member and second reflecting member, and described supporting member is opaque.

In certain embodiments, a kind of method is made optical devices.Described method comprises provides an opaque substrate.Described method further is included in and forms one or more layer on the described opaque substrate.Described one or more layer comprises one first optical layers, its transmission and reflect incident light at least in part at least in part.Described one or more layer comprises one second optical layers, and it reflects incident light at least in part.Described second optical layers and described first optical layers are spaced apart.In described first optical layers and described second optical layers at least one can move between the second place that has a second distance between first and second optical layers in the primary importance that has one first distance between first and second optical layers and one.The reflectivity of the mobile modulation described device of at least one in described first optical layers and described second optical layers between the primary importance and the second place.

In certain embodiments, a kind of method light modulated.Described method comprises provides optical devices.Described optical devices comprise an opaque substrate.Described optical devices further comprise one first optical layers, its transmission and reflect incident light at least in part at least in part.Described optical devices further comprise one second optical layers, and it reflects incident light at least in part.Described second optical layers and described first optical layers are spaced apart.In described first optical layers and described second optical layers at least one can move between the second place that has a second distance between first and second optical layers in the primary importance that has one first distance between first and second optical layers and one.Described method moves at least one in described first optical layers and described second optical layers when further being included in the described device of rayed.

Description of drawings

Figure 1A is a schematic cross-section of incorporating the exemplary demonstration substrate of an anti-reflection coating and integrated additional illumination device into.

Figure 1B schematically illustrates another program of additional illumination device.

Fig. 2 schematically illustrates the details of the exemplary manufacturing process of a micromachined arc lamp light source.

Fig. 3 has illustrated the exemplary bias voltage centre-driven scheme of interferometric modulator array in a display.

Fig. 4 A is the figure of explanation one based on the exemplary colored displaying scheme of the notion of " substrate+pigment ".

Fig. 4 B is that one to provide reconfigurable be the structural drawing of illustrative system of the product at center with the display.

It is the product at center with the display that Fig. 4 C schematically illustrates an exemplary generic.

Fig. 5 A schematically illustrates the geometric configuration of an exemplary interferometric modulator (being shown as non-actuated state), its slave electric operation state (behavior) decoupling optics operating condition.

Fig. 5 B schematically illustrates the interferometric modulator among Fig. 5 A under actuated state.

Fig. 5 C is the curve of performance that is illustrated in the interferometric modulator design of Fig. 5 A under the black and white state and Fig. 5 B.

Fig. 5 D is the curve of performance that is illustrated in the interferometric modulator design of Fig. 5 A under several color state and Fig. 5 B.

Fig. 6 A schematically illustrates another exemplary interferometric modulator, its slave electric operation state coupling optics operating condition and hidden supporting construction, and described interferometric modulator is shown as non-actuated state.

Fig. 6 B schematically illustrates the interferometric modulator among Fig. 6 A under actuated state.

Fig. 7 A schematically illustrates the exemplary interferometric modulator design under a state, and it has utilized the anisotropic stress film.

Fig. 7 B schematically illustrates the interferometric modulator of Fig. 7 A under another state.

Fig. 8 A schematically illustrates an exemplary interferometric modulator that utilizes rotation excitation.

Fig. 8 B schematically illustrates the exemplary manufacturing sequence of the interferometric modulator of Fig. 8 A.

Fig. 9 A is the structural drawing of an exemplary mems switch.

Fig. 9 B is based on the structural drawing of the exemplary line driver of mems switch.

Fig. 9 C is based on the structural drawing of the exemplary row driver of mems switch.

Fig. 9 D is based on the structural drawing of the exemplary NOT-AND gate of mems switch.

Fig. 9 E is the structural drawing of incorporating into based on the exemplary display system of the logic of MEMS and actuator assembly.

Figure 10 A schematically illustrates structure, manufacturing and the operation of an exemplary mems switch to Figure 10 H.

Figure 10 I and Figure 10 J have illustrated two alternative expressivity switch designs.

Figure 11 A schematically illustrates an exemplary 2-D photon structure based on little ring.

Figure 11 B schematically illustrates an exemplary periodicity 2-D photon structure.

Figure 12 schematically illustrates an exemplary 3-D photon structure.

Figure 13 A schematically illustrates one and incorporates a little ring structure and the exemplary interferometric modulator under non-actuated state into.

Figure 13 B schematically illustrate Figure 13 A under actuated state interferometric modulator.

Figure 13 C schematically illustrates an exemplary interferometric modulator of incorporating one-period property 2-D photon structure into.

Figure 14 A schematically illustrates an exemplary interferometric modulator as optical switch.

Figure 14 B schematically illustrates the exemplary distortion as the interferometric modulator of Figure 14 A of optical attenuator.

Figure 15 A schematically illustrates an interferometric modulator as optical switch or optics decoupling device.

Figure 15 B schematically illustrates the combination as the interferometric modulator of N * N optical switch.

Figure 16 schematically illustrates the exemplary manufacturing sequence of an adjustable interferometric modulator structure.

Figure 17 A schematically illustrates an exemplary adjustable interferometric modulator structure of incorporating in the wavelength-selective switches.

Figure 17 B schematically illustrates the wavelength-selective switches of Figure 17 A that further incorporates in the solid-state device.

Figure 17 C schematically illustrates the collision coupling unit integrated with wavelength-selective switches.

Figure 18 A is the schematic representative of an exemplary two-channel equalizer/frequency mixer.

Figure 18 B schematically illustrates the exemplary construction of employing based on balanced device/frequency mixer of Figure 18 A of the assembly of interferometric modulator.

Figure 19 schematically illustrates a continuous manufacturing process based on volume.

The distortion that Figure 20 A schematically illustrates to Figure 20 F in the rete of an interferometric modulator has caused by the shown change in color of described interferometric modulator.Figure 20 G schematically illustrates an illustrative system that can be used for assessing the residual stress state of a deposit film.

Figure 21 A schematically illustrates discontinuous film to Figure 21 E.Figure 21 A schematically illustrates one and has the exemplary form of the discontinuous film of unique antireflection character.Figure 21 B and Figure 21 C schematically illustrate the exemplary film in the stage of formation in early days.Figure 21 D and Figure 21 E schematically illustrate the discontinuous film of an exemplary porous.

Figure 22 A schematically illustrates a counter-rotative type interferometric modulator, the optics and the electromechanical property of the described device of wherein said configuration decoupling.

Figure 22 B schematically illustrates another exemplary counter-rotative type interferometric modulator, and wherein said substrate is a high reflection.

Figure 23 A and Figure 23 B are the system construction drawings that explanation one comprises the exemplary display device of interferometric modulator.

Embodiment

Following embodiment relates to some embodiments of the invention.But the present invention can implement by being permitted different ways.With reference to the accompanying drawings, in the accompanying drawings, similar parts use similar number-mark from start to finish in the embodiment of this paper.To be not difficult to find that the present invention can show that no matter one be motion (video) or static (rest image) and no matter be to implement in the device of image of literal or picture form any being configured to according to following description.More specifically, expection the present invention can implement in inferior multiple electronic installation or is associated with these electronic installations for example (but being not limited to): mobile phone, wireless device, personal digital assistant (PDA), handheld computer or portable computer, gps receiver/omniselector, camera, the MP3 player, video camera (camcorder), game machine, wrist-watch, clock, counter, TV monitor, flat-panel monitor, computer monitor, automotive displays (for example, mileometer display etc.), driving cabin controller and/or display, the camera view display (for example, the rear view cameras display of vehicle), electronic photo, electronics billboard or label, projector, building structure (for example layout of brick and tile), packing and aesthetic structures (for example, the image display of a jewelry).Also can be used in the non-display application such as electronic switching device with the MEMS device of similar described herein.

Anti-reflection coating

The attribute of a previously described interferometric modulator design is the efficient of its dark state, and wherein it can be absorbed into nearly 99.7% of the light that is mapped on it.This higher dark state efficient is of value to reflective display.In described design, interferometric modulator reflects the light of certain color under non-actuated state, and under actuated state absorbing light.

Because interferometric modulator array is present on the substrate, so the inborn reflex of described substrate has reduced the potential possibility that absorbs.Under the situation of glass substrate, volume reflection is generally about 4% of visible spectrum.Therefore, no matter the receptivity of interferometric modulator structure how, a dark state only can be the same dark with the front surface reflection of permission with described substrate.

A kind of improvement one is by incorporating anti-reflection coating (AR coating) into based on the method for the overall performance of the display of interferometric modulator.These coatings can comprise one or more thin dielectric retes that are deposited on the substrate surface, and it is through designing to reduce the reflection from those surfaces.These films have many different possible configurations, and its design and manufacturing are our known technology.A kind of simple film design is the single coating of magnesium fluoride, and its thickness is approximately the quarter-wave of relative photo.Another example has used and has been deposited on quarter-wave lead fluoride film on glass, is quarter-wave magnesium fluoride film subsequently, and another the 3rd example is to insert a zinc sulfide film between double-layer films.

Figure 1A has illustrated an exemplary methods, and wherein an AR coating can be incorporated in the interferometric modulator display to improve the performance of described display system.In Figure 1A, AR coating 100 (can comprise one or more layers film as mentioned above) is deposited on the surface of the glassy layer 102 that is attached on the glass substrate 106, makes interferometric modulator array 108 at the opposite side of glass substrate 106.The existence of AR coating 100 reduces from the amount of the incident light 109 of described surface reflection by more incident light 109 being coupled into glassy layer 102 in certain embodiments.The result is worked by 108 pairs of more incident lights 109 of interferometric modulator array, and can obtain a darker show state when described interferometric modulator operates in absorption mode following time.AR coating 100 also can directly be deposited on the glass substrate 106 on the surface of a side relative with interferometric modulator array 108 in certain embodiments.

The integrated lighting device

How Figure 1A can supply with the additional illumination light source described display if also having showed in certain embodiments.In the exemplary embodiments of Figure 1A, the micro-arc lamp 104 of an array is made in the glassy layer 102.Arc lamp is effective light source.Once adopted the technology relevant to make arc lamp in history with making common bulb.At United States Patent (USP) the 4th, 987, a canonical form of this kind lamp has been described in No. 496.Make a glass container, and the electrode that will make respectively is closed in the described container.After filling a suitable gas, with described seal of vessel.Though that this kind bulb can be made is enough little, its manufacture method may be not suitable for the manufacturing of the big integral array of this kind bulb.

The technology that is used to make micro mechanical structure can be applicable to make micro-discharge lamp or arc lamp.Because the micro-size of these " midget lamps " significantly is lower than the voltage and current that the arc lamp that utilizes conventional method and size manufacturing is supplied with in requirement so drive the voltage and current of " midget lamp " in certain embodiments.In the example of Figure 1A, make the feasible light 113 that sends by lamp 104 of described array by an inborn reflex layer 111 guiding interferometric modulator array 108, this will be described below.

Fig. 2 provides about how making the details of an exemplary lamp of this kind (being used for a flat-panel monitor through optimization).Following description order.As in step 1 as seen, adopt wet type or dry chemical etching to come etching glass layer 200 to form a reverberation bowl 201.The degree of depth of described bowl and shape are by the required lighting area decision of each lamp.One shallow bowl will produce that a wider reflecting bundle is expanded and a parabolic shape bowl will tend to collimate the light that is reflected.The diameter of described bowl can change between hundreds of microns at 10 microns.This size can be acceptably fuzzy display area amount by the angle from the observer and decides in certain embodiments.It also is the function of the array density of midget lamp.In step 2, use standard deposition technique (for example, sputter) and standard photolithography techniques deposits and patterning one reverberator/metal halide 204 and sacrifice layer 202.Described reverberator/metal halide can be and comprises aluminium (reverberator) and such as the stacks of thin films of the metal halide of thallium iodide, potassium iodide and indium iodide.Described metal halide can (though on non-intrinsically safe) strengthens the character of the light that produces.Described sacrifice layer can be the layer such as silicon.

Then, in step 3, deposition and patterned electrode layer 206 are to form two independently electrodes.This material can be the refractory metal such as tungsten, and will have the thickness that is enough to provide mechanical support, is about thousands of dusts.Utilize a dry type release tech to remove sacrifice layer 202 then.Make by the substrate 106 (showing among Figure 1A) that subassembly (with the form of these lamps of an array) is attached to a similar glass plate in certain embodiments described slotted-type reflector surface is sealed described subassembly to described plate.The cavity that the gas backfill of use such as xenon is formed by lamp in seal process is to the pressure of an about atmospheric pressure.This can finish by carrying out seal process in the sealed chamber of formerly having filled xenon.

In step 4, the electrode of each lamp is applied enough voltage will cause discharging in the gas between electrode end and causing on direction, sending light 205 away from reverberator 204.If gap clearance is for hundreds of approximately microns or still less, this voltage can be low to moderate tens of volts so.If electrode material is with minimum stress deposition, sacrifice layer 202 is with the position of determining electrode in described bowl so.In this case, select thickness in certain embodiments so that discharge is positioned on the focus of described bowl.If have residual stress (it will cause that electrode moves when being released), select thickness so in certain embodiments to compensate this motion.In general, described thickness will only be certain mark of the described bowl degree of depth, from several microns to tens microns.

See Figure 1A again, show that wherein light is along a path 113 propagation.Therefore, light sends towards described interferometric modulator array, is applied and 110 is reflexed to interface 107 and observer 115 by described array along the path subsequently at its place's light.

Do not comprise that the reflection horizon makes that its omnidirectional is luminous but described lamp can be manufactured.

Can be used in the multiple application of micro-light source of needs or array of source through manufacturing the lamp that has or do not have reverberator.These application can comprise the projection display, are used for the backlight of emissivity flat-panel monitor or are used for inside (dwelling house, buildings) or the ordinary light source of outside (automobile, electric torch) purposes.

Referring to Figure 1B, wherein show a kind of alternative expressivity additional illumination light source method.Photoconduction 118 comprises a glass or a plastic layer that has been attached to substrate 112.Light source 116 is installed in (it can comprise the transmitting illuminant of any number, such as fluorescent tube, led array or aforementioned midget lamp array) opposite side of described photoconduction.Use a collimator 120 that light 122 is coupled in the described photoconduction, thereby make most of light be collected in the described guides by total internal reflection.A zone of described photoconduction during scattering pad 124, it has used wet type or the roughening of dry chemical method.Described scattering pad scribbles a material or stacks of thin films 126, and there be a reflecting surface and the sorbent surface towards observer 128 towards substrate 112 in it.

When the light in being collected in guides is incident on the scattering pad, the condition of total internal reflection and some part 129 scattering on all directions of light have been violated.The scattered light that escapes in the surrounding medium towards observer 128 under the normal condition reflects and enters substrate 112 owing to the existence of reflectance coating side 126.Be similar to aforesaid midget lamp, the scattering pad of some embodiment is manufactured into an array, and wherein each pad is formed required size and makes that the fuzzy display part of its direct-view almost can not be in sight.Though these sizes less (be about tens of micron), it can provide enough additional illuminations owing to the intrinsic optical efficiency of following interferometric modulator array 114.The shape of described scattering pad can be the arbitrary shape that circle, rectangle maybe can minimize observer's consciousness.

Addressing element in an array

In certain embodiments, with the array of coordination mode excitation interferometric modulator, the mode that is known as " line at a time " with usually is applied to a contact potential series on the row and column of described array in order to show purpose.Key concept makes the voltage that is applied on the select column cause that according to described column voltage the respective element on select row encourages or release for applying an enough voltage to a particular row.Threshold value among some embodiment and the voltage that applies must make the element on select row only be subjected to the influence of the column voltage that applied.By select in regular turn to comprise described capable group of described display can be in one period the whole array of addressing.

In Fig. 3, showed an exemplary straightforward procedure finishing this purpose.Hysteresis curve 300 is the corresponding desirable expressions of the electric light of a reflectivity interferometric modulator.The x axle is showed the voltage that is applied, and the y axle is showed catoptrical amplitude.Because when voltage increased above connection threshold value (pull-inthreshold), described interferometric modulator structure encouraged and becomes high absorption, so the interferometric modulator of some embodiment shows hysteresis phenomenon.When reducing the voltage that is applied, the voltage that is applied is dropped to discharge below the threshold value so that described structure is return the state of non-excited target.Described connection threshold value and the difference that discharges between the threshold value have produced lag windwo.At United States Patent (USP) the 5th, 986, a described lag-effect and an addressing scheme that substitutes have been discussed in No. 796.In certain embodiments can by keep all the time a bias voltage Vbias with keep described interferometric modulator its driven or any state in d/d state under utilize described lag windwo.Voltage Voff and Von are corresponding to excitation or discharge the required voltage of described interferometric modulator structure.The electronic equipment that is known as row driver and line driver by use imposes on described row and row to drive described array with voltage in certain embodiments.Connection threshold value with 6 volts and 3 volts release threshold value interferometric modulator have been fabricated to.For described device, the representative value of Vbias, Voff and Von is respectively 4.5 volts, 0 volt and 9 volts.

In Fig. 3, sequential chart 302 explanations can apply the waveform catalog with the array of excitation interferometric modulator, and the array of described interferometric modulator shows that one is similar to the hysteresis curve of curve 300.Always have five voltages (two column voltages and three capable voltages) and be used for some embodiment.Select described voltage to make that Vco11 just in time is the twice of Vbias value in certain embodiments, and Vco10 is zero volt.Select described capable voltage to make the difference between Vsel F0 and Vco10 equal Von in certain embodiments, and the difference between VselF0 and the Vco11 equal Voff.On the contrary, in certain embodiments, the difference between Vsel F1 and the Vco11 equals Von, and the difference between Vsel F1 and the Vco10 equals Voff.

Addressing occurs in the frame 0 and 1 alternately.In exemplary addressing order, the data with row 0 during frame 0 are written into described row driver, and causing according to described data is binary one or zero to apply the voltage level of Vco11 or Vco10 respectively.After arranging data properly, line driver 0 applies a strobe pulse with Vsel F0 value.This causes existing any interferometric modulator that lists of Vco10 to become excited target, and exists the interferometric modulator that lists of Vco11 to discharge.Data with next line are written into described row and apply a strobe pulse to this journey or the like in regular turn, until the end that arrives described display.Addressing and then from row 0; Yet current described addressing occurs in the frame 1.

Be to have changed corresponding relation between data voltage and column voltage in the difference between the described frame, now represent binary zero, and described capable strobe pulse now is the level of Vsel F1 by Vco10.Utilize this technology, the whole polarity of voltages that impose on array of display in certain embodiments replace with each frame.This is especially useful to the display based on MEMS, because it allows compensation generable any DC level electric charge accumulation when only applying the voltage of single polarity.Electric charge accumulation in described structure can be offset the electric light curve of described interferometric modulator or other MEMS devices significantly.

Colored displaying scheme

Because interferometric modulator is the fexible unit with various potential optic responses, so that many different colored displaying schemes have different attributes.A potential scheme has been utilized this fact: existence can realize the scale-of-two interferometric modulator design of color state, dark or black state and white states in identical interferometric modulator.This ability can be used for realizing that one can be described as the color schemes of " substrate+pigment ".Thereby the reason of using this term is described method and is similar to by pigment being added to a white substrate to finish the mode that the color of wanting produces color of paint.By using the method, some paint can add the kind of pigment of substrate and quantity to by control and obtain any color in the spectrum and the saturation degree of any level.Same procedure can be used for describing a display of incorporating chromatic colour and monochrome pixels into.

Shown in Fig. 4 A, an exemplary pixel 400 comprises five sub-pixel elements 402,404,406 and 408, and each sub-pixel can be distinguished reflect red, green glow, blue light and white light.All sub-pixels can both be in a dark state.By being used in United States Patent (USP) the 5th, 835, the technology of being discussed in No. 255 relevant with pulse-length modulation realizes the brilliance control to each sub-pixel.Combine with the size of the relative sub-pixel of suitable selection, this can cause producing a pixel, wherein described pixel intensity and saturation degree is carried out control largely.For example, by minimizing the overall brightness of white sub-pixels, can realize HI SA highly saturated color.On the contrary, the brightness by minimizing color sub-pixel or by with white sub-pixels in combination with the brightness maximization of color sub-pixel, can realize the white-black pattern that becomes clear.Clearly also can obtain all changes form between it.

The user is to the control of color schemes

Some embodiment and the display based on interferometric modulator of the previous color schemes of describing provide the elasticity on the display performance in the build-in attribute aspect resolution, gray scale depth and the refresh rate.Given this scope, it is useful providing a product that comprises this display to make the user be controlled its general characteristic to the user.Perhaps, display automatically adapts to the different advantages of watching needs to can be equally having.

For example, if under the situation of only watching text, the user may want to use product down in white-black pattern so.Yet under another situation, described user may want to watch high-quality colored rest image, or it may want to watch the on-the-spot broadcasting video under another pattern.Although each pattern in these patterns all is in the scope of a given interferometric modulator display configuration potentially, all require the balance of some attribute.Balance comprises low refresh rate, if require high-resolution imaging; Or comprise the ability that realizes the high gray degree of depth, if only require black and white.

For this elasticity as required is provided to the user, the controller hardware of some embodiment can be reconfigured to a certain extent.Balance is this true result: any display only has the bandwidth of certain tittle, and it fundamentally is subjected to the restriction of pixel element response time and has therefore determined displayable quantity of information in a preset time.

One of explanation can provide this type of flexible exemplary display structure among Fig. 4 B.In this block scheme, logic controller 412 is implemented by using a kind of technology in various IC (integrated circuit) technology, comprising programmable logic device (PLA) and field programmable gate array (FPGA), it allows to change or reconfigure the function of described assembly after dispatching from the factory.This type of can be these processing high-performance is provided being used for device such as the special applications of digital signal processing or compression of images traditionally, provides elasticity simultaneously during the design phase of incorporating the product that these devices are arranged into.

The controller 412 of some embodiment provides signal and data to the drive electronics 414 and 416 that is used for addressing display 418.Conventional controller is based on IC or Application Specific Integrated Circuit (ASIC), and it relies on its design during manufacture and " is programmed " effectively.The controller 412 of some embodiment comprises an inside chip layout (chip layout) that includes the logic module (logic gate and logic module or door assembly) of many bases and higher level.By using the field programmable device such as PLA or FPGA, different configurations shown can be loaded on the display controller assembly from the form of an assembly 410 that can be storer or custom microprocessor and storer with hardware applications or " hardware applications (hardapp.) ".Described storer can be the form of EEPROM (EEPROM (Electrically Erasable Programmable Read Only Memo)) or other programmable storage, and described processor can adopt the form of simple microcontroller, its function is for to be loaded on FPGA with hardware applications from storer, unless this loading procedure is carried out by any processor that is associated with the general utility functions of described product.The method is than the tool advantage, and reason is that it may realize the different display usefulness configurations of broad range and the scanning of a display speed of mixing with simple relatively circuit, and has the potential that it is combined.

The part of screen (for example) can be used as the input text area territory of a low resolution and is operated, and another part provides the high-quality reproduction to receiving Email simultaneously.Under the restriction of display overall bandwidth, this can realize by the refresh rate and the scanning times that change the different sections of display.It is text filed and corresponding to only run-down or twice of one or two s' gray scale depth to scan low resolution fast.The scanning height Email zone of reproducing and scan three times or four times fast corresponding to three or four s' GTG.

Configurable electronic product

This notion can expand to the function that not only comprises display controller in certain embodiments, and comprises the function of entire product.Fig. 4 C shows the exemplary configuration of a universal portable electronic product 418, and it has a programmable logic device or impartial device in its core 420 places.Be in the personal electric product at center with the display such as PDA (personal digital assistant) and communicator many, central processing unit is one to use the distortion of the RISC (Reduced Instruction Set Computer) of an instruction set of simplifying.Although risc processor is the distortion that has more efficient of the CPU of the most of PC of support, it remains to carrying out the general processor that iterative task (such as search instruction from storer) consumes big energy.

" ng for Generl-Purpose ", Proc.IEEE Workshop on FPGA-basedCustom Computing Machines has a detailed description in 1998.

Once more referring to Fig. 4 C, in certain embodiments, hardware applications processor 420 is in the center of the set of I/O equipment and peripheral equipment, and it will adopt, revise or ignores described I/O equipment and peripheral equipment based on the character and the function of the current hardware applications that loads.In certain embodiments, described hardware applications can the storer 422 from be present in product in and load, or via RF or IR interface 424 and from an external source, load, it can be from the internet, cellular network or other electronic installation are downloaded hardware applications, together with the relevant content of some hardware applications.Other example of hardware applications comprises speech recognition or phonetic synthesis algorithm, the handwriting recognition algorithm of pen control input 426 and the compression of images and the tupe of display 428 and image-input device 430 of audio interface 432.This product can rely on its primary clustering, carries out countless functions with display as main user interface and reconfigurable core processor.Whole energy consumptions of this device can be on the order of magnitude of tens of milliwatts, and the catabiotic order of magnitude of existing product is hundreds of milliwatts comparatively speaking.

Decoupling zero electromechanical characteristics on the optical signature

" ng for General-Purpose ", Proc.IEEE Workshopng forGeneral-Purpose ", Proc.IEEE Workshop on FPGA-based Custom ComputingMachines has a detailed description in 1998.

Once more referring to Fig. 4 C, in certain embodiments, hardware applications processor 420 is in the center of the set of I/O equipment and peripheral equipment, and it will adopt, revise or ignores described I/O equipment and peripheral equipment based on the character and the function of the current hardware applications that loads.In certain embodiments, described hardware applications can the storer 422 from be present in product in and load, or via RF or IR interface 424 and from an external source, load, it can be from the internet, cellular network or other electronic installation are downloaded hardware applications, together with the relevant content of some hardware applications.Other example of hardware applications comprises speech recognition or phonetic synthesis algorithm, the handwriting recognition algorithm of pen control input 426 and the compression of images and the tupe of display 428 and image-input device 430 of audio interface 432.This product can rely on its primary clustering, carries out countless functions with display as main user interface and reconfigurable core processor.Whole energy consumptions of this device can be on the order of magnitude of tens of milliwatts, and the catabiotic order of magnitude of existing product is hundreds of milliwatts comparatively speaking.

Decoupling zero electromechanical characteristics on the optical signature

United States Patent (USP) the 6th, 674 had before been described the exemplary interferometric modulator design that is used for from its electromechanical properties of optical property decoupling zero of an interferometric modulator No. 562.Some embodiment described herein utilizes counter-rotative type interferometric modulator configuration, and the example is illustrated in Fig. 5 A, Fig. 5 B, Fig. 6 A, Fig. 6 B, Figure 22 A and Figure 22 B, with decoupling zero electromechanical properties at least in part on optical property.Be similar to many other interferometric modulator designs, the design of counter-rotative type interferometric modulator uses electrostatic force to change the geometric configuration of an interference cavity.Some embodiment described herein is from the dynamo-electric operating condition of the optics operating condition decoupling zero interferometric modulator of interferometric modulator, and then allows to be applicable to that the structural design and the material of some assembly of interferometric modulator are independent of its optical property and are carried out selection.

In the exemplary interferometric modulator that Fig. 5 A and Fig. 5 B are showed, electrode 502 be made on the substrate 500 and by insulation film 504 and with film/minute surface 506 electrical isolations.Described electrode 502 is relatively placed and only as an electrode with watching the surface, but not as a minute surface.One optical cell 505 is formed between the film/minute surface 506 and second minute surface 508.Provide support for second minute surface 508 by a transparent superstructure 510, described superstructure can be a thick sedimentary organic material, such as SU-8, polyimide or an inorganic material.

In certain embodiments, do not apply voltage, film/minute surface 506 remains in some position with respect to second minute surface 508 that Fig. 5 A is showed, it is decided by the sacrificial layer thickness that is deposited during making.For the driving voltage that is beset with approximately, it is suitable that the thickness of thousands of dusts can be.If described second minute surface is made by a suitable material (for example, chromium) and described minute surface/film is made by a reflective material (such as aluminium), so described structure can be reflection the light 511 of some frequency that observer 512 discovered.Particularly, if described chromium layer is enough thin reaching translucent (about 40 dusts), and described aluminium lamination is enough thick in reaching opaque (at least 500 dust), and so described structure can have an optic response comparatively widely.The black and white of the exemplary interferometric modulator of Fig. 5 C and Fig. 5 D difference exploded view 5A and Fig. 5 B and the example of color response.In some this type of embodiment, optic response is decided by chamber length and the thickness of forming layer.

Fig. 5 B shows voltage is put on the result who is produced between the central electrode 502 of exemplary interferometric modulator of Fig. 5 A and the film/minute surface 506.Therefore shown in Fig. 5 B, 506 perpendicular displacements of film/minute surface have changed the length of optical cell and have therefore changed the optical property of interferometric modulator.Fig. 5 C shows an exemplary reflectivity optics response, and it has two possibility states: show black state 521 when device is encouraged fully; When device shows a white states 523 when not exclusively being encouraged.Fig. 5 D shows an exemplary optics response, corresponds respectively to blueness, green and red with color peak value 525,527 and 529.Therefore, the dynamo-electric operating state that installs described in some embodiment can be independent of optical property and be controlled.In certain embodiments, the material of substrate 500, central electrode 502 or insulation film 504 and configuration can influence the electromechanical property of interferometric modulator, but do not influence the optical property of interferometric modulator apparently.In some this type of embodiment, one or more than one these elements can be independent of the material that includes second minute surface and selected.

Between machinery/specular layer 2210 and the metallic mirror surface 2214.Machinery/specular layer 2210 is supported by first support column 2208, and hyaline layer 2216 is supported by second support column 2212.In certain embodiments, conductor 2204 is connected to a driving mechanism and is applicable to the electrostatic displacemen of machinery/specular layer 2210.The solid line illustrated one of machinery/specular layer 2210 does not drive or displacement state not among Figure 22 A, and the dash lines show one of machinery/specular layer 2210 is driven or displacement state among Figure 22 A.Between logical machinery/specular layer 2210 and the metallic mirror surface 2214.Machinery/specular layer 2210 is supported by first support column 2208, and hyaline layer 2216 is supported by second support column 2212.In certain embodiments, conductor 2204 is connected to a driving mechanism and is applicable to the electrostatic displacemen of machinery/specular layer 2210.The solid line illustrated one of machinery/specular layer 2210 does not drive or displacement state not among Figure 22 A, and the dash lines show one of machinery/specular layer 2210 is driven or displacement state among Figure 22 A.Usually machinery/specular layer 2210 is selected when it contacts with dielectric 2206 incident light is produced a desired optic response.

In certain embodiments, observer 2201 observes image from the relative avris of substrate 2202.When machinery/specular layer 2210 stood electrostatic displacemen in certain embodiments, first chamber 2218 subsided and second chamber 2220 expands, and made gap enlargement between speculum surface layer 2214 and the machinery/specular layer 2210.As United States Patent (USP) the 6th, 055, the exemplary simple interferometric modulator design of other described in No. 090 realizes a reflectivity color state and realizes a dark state via absorption by using to interfere.Because optimally being in second chamber 2220, the standing wave peak value of gained absorbs maximization, so in some this type of exemplary interferometric modulator, can realize dark state.When machinery/specular layer 2210 moved to contact or more close dielectric 2206, standing wave shifted out the position, reflect blue, green glow or ruddiness according to the predetermined gap between dielectric 2206 and the machinery/specular layer 2210.By with the gap turn narrow between speculum surface layer 2214 and the machinery/specular layer 2210, modulator is all wavelength in the reflect visible light spectrum substantially, to cause a reflectivity state of white light.As indicated above, in certain embodiments, the observer 2201 of a counter-rotative type interferometric modulator observes image from the relative avris of substrate, rather than observes image by substrate.

In certain embodiments, substrate comprise be positioned on the removable minute surface with show a side that side is relative and substantially not with the synergistic a part of counter-rotative type interferometric modulator of modulated light.As used herein, term " demonstration side " is used in reference to Gong observer for the counter-rotative type interferometric modulator and sees a side through light modulated.The substrate 2202 of Figure 22 A, conductor 2204 and dielectric layer 2206 all are in the below of machinery/specular layer 2210, and then are positioned at a side relative with the demonstration side of machinery/specular layer 2210.Opaque substantially (for example at machinery/specular layer 2210, total reflection) among some embodiment, shines on the modulator 2200 and be not subjected to the influence of the optical property of substrate 2202, conductor 2204 or dielectric layer 2206 by the light of modulator 2200 modulation substantially from showing side.Therefore, in certain embodiments, at least one in substrate 2202, conductor 2204 and the dielectric layer 2206 can be selected as substantially to light opaque (for example, opaque, highly reflective or translucent).In certain embodiments, substrate 2202 comprise conductor 2204, dielectric layer 2206 or comprise conductor 2204 and dielectric layer 2206 both.

In the substrate of counter-rotative type interferometric modulator, conductor and the dielectric layer at least one is that opaque some embodiment provides undiscovered advantage in other counter-rotative type interferometric modulator.For example, typical counter-rotative type interferometric modulator has conductive trace on the substrate or in substrate, and these conductive traces are conductively coupled to conductor.If substrate is transparent substantially, so from showing that side these conductive traces of looking are " floating " and need not any visual supporting construction.When showing that side is watched the counter-rotative type interferometric modulator, the combination of described conductive trace and transparent substrates can produce a gray or have the peripheral part of moire fringe (moire pattern) between modulator.In addition, can see the light that (for example, passes a transparent part of substrate) from the below and enter into modulator from showing side.Therefore, when when showing that side is watched, adopt the display of counter-rotative type interferometric modulator to show the contrast that weakens with a transparent substrates.

Light shield or matte can be used for attempting to avoid the situation of this type of contrast reduction, yet these light shields require to be added into extra structure and treatment step to described counter-rotative type interferometric modulator.In certain embodiments, substrate is selected as opaque (for example, opaque, highly reflective or translucent), makes the optical appearance of itself and conductive trace be complementary, and then when from showing that side provides a uniform peripheral part when observing.In some other embodiment, substrate is selected as opaque and non-reflexive (for example, dark), makes that the color when itself and described counter-rotative type interferometric modulator are in dark state is complementary.In some other embodiment, substrate is selected to avoid adopting photomask structure or treatment step.

In certain embodiments, having an opaque substrate advantageously avoids owing to the handling problem that light scattering produced during the photoetching.In certain embodiments, during the manufacturing of counter-rotative type interferometric modulator, photoetching technique is used to form the various features of modulator.For the photolithographic fabrication of structure on the substrate,, so then can cause the photoetching diffusion of light by the parts of substrate below or the light of surperficial institute scattering if substrate sees through the light (for example, ultraviolet light) that is used for photoetching substantially.This light scattering then can influence (for example, restriction sharpness, precision or minimum dimension) photoetching of gained and form the size of structure.Similarly, a transparent conductor or a transparency dielectric layer can produce undesired photoetching scattering of light, and then influence is covered in the size of the photoetching formation structure of top.In some embodiment described herein, the opaque substantially substrate of photoetching light is weakened or eliminates this type of scattering by using.

In certain embodiments, have the circuit that an opaque substrate advantageously covers the below and avoid the influence of parasitic light.In certain embodiments, the counter-rotative type interferometric modulator in a Semiconductor substrate that comprises circuit (for example, silicon) make on, wherein said circuit (for example includes, but is not limited to passive component, thin film resistor, capacitor, inductor) and driving component (for example, diode, transistor, integrated circuit).For example, a silicon substrate may be made in and has the capacitive sensing circuit that can be scaled to the interferometric modulator array size.In certain embodiments, this type of sensor circuit can be used for monitoring the state (for example, so that memory function to be provided) of each interferometric modulator in the array or is used to respond to the external force (for example, so that touch screen function to be provided) that is applied on the substrate.In some other embodiment, substrate comprises control circuit.

If substrate is transparent, parasitic light can enter into the circuit of substrate so.Described parasitic light can damage circuit potentially or can produce charge carrier in circuit, and then influence is by the noise that circuit produced and the degree of accuracy of signal.By using an opaque substrate, the substrate circuitry of protection below is avoided the influence of parasitic light substantially.

In certain embodiments, having an opaque substrate advantageously allows the standard semiconductor treatment facility to be used to make interferometric modulator.For example, for make flat-panel monitor by the use silicon substrate for, various manufacturing steps all depend on the orientation of silicon wafer.The upper surface of silicon wafer has usually and is formed at top various structures, makes that the optical property of treated upper surface of silicon wafer is different with those optical properties of unprocessed lower surface.Existing treatment facility uses the optical property of the treated upper surface different with the optical property of undressed lower surface to determine the orientation of silicon wafer.

The interferometric modulator that uses this existing treatment facility manufacturing to have a transparent glass substrate is very difficult.Because formed structure can both be seen from two surfaces on the upper surface, so the optical property of upper surface seems that the optical property with lower surface is identical substantially.Therefore, glass substrate does not provide existing treatment facility to be used for the different optical character on two surfaces of definite wafer orientation.For overcoming the difficulty of using in the glass substrate, require various technology so that two surfaces are distinguished.Yet these technology may be numerous and diverse and be difficult to other manufacturing technology integrated.In certain embodiments, by using an opaque substrate (for example, silicon), the standard semiconductor treatment facility can be easy to be used for forming interferometric modulator on described substrate because on the upper surface formed structure to look from lower surface no longer be visible.

In certain embodiments, having an opaque substrate advantageously allows the manufacturing of interferometric modulator and the manufacturing of below control circuit to integrate.For example, the standard semiconductor treatment facility is used in and forms control circuit on semiconductor (for example, the silicon) substrate and form interferometric modulator on described substrate.

In certain embodiments, having an opaque substrate advantageously enlarges the area of control circuit and has advantageously reduced and control circuit is integrated in restriction relevant in the interferometric modulator.For the interferometric modulator that wherein has control circuit, control circuit has occupied and can be used for the zone of light modulated originally, and then has limited and be optically active viewing area.Therefore expectation is dwindled by the occupied viewing area part of control circuit.By in the substrate below the optical module that control circuit is placed interferometric modulator or on substrate, some embodiment described herein advantageously removes control circuit and be provided for from the viewing area to form the big zone of control circuit.

In certain embodiments, have an opaque substrate advantageously convenient use in the interferometric modulator array integrated lighting source.Previous described for the situation of lighting source being incorporated into to the interferometric modulator.For example, for the counter-rotative type interferometric modulator, lighting source (for example, Organic Light Emitting Diode) can incorporate into to interferometric modulator to provide illumination from display.Yet the light that a transparent substrates can be from lighting source provides a path not help to strengthen the brightness of described display for its escape.In certain embodiments, at least a portion of substrate is a highly reflective, to reduce the loss of passing substrate from the light of lighting source.

In certain embodiments, by using a reflective substrate can form a counter-rotative type interferometric modulator structure that substitutes.Figure 22 B illustrates that schematically wherein substrate 2202 is another exemplary counter-rotative type interferometric modulator 2200 of highly reflective.Machinery/specular layer 2210 of Figure 22 B is partially transparent and partial reflection.For example, in certain embodiments, machinery/specular layer 2210 comprises one and is used for part transmission and catoptrical thin chromium layer and and is used to apply the transparent ITO layer of an appropriate voltage with excitation interferometric modulator 2200.The substrate 2202 of Figure 22 B be highly reflective and as a static reflecting body (stationary reflector).In certain embodiments, interferometric modulator 2200 further comprises one and is in passivation layer 2222, on the substrate 2202 and is in conductor 2204 and on the passivation layer 2222 and is in dielectric layer 2206 on the conductor 2204.In certain embodiments, conductor 2204 comprises a transparent ITO layer, and in some other embodiment, and conductor 2204 comprises a metal with a passivation layer.Encourage interferometric modulator 2200 to make machinery/specular layer 2210 move by appropriate voltage being applied to machinery/specular layer 2210 and being applied to conductor 2204, and then change the size of its middle optical cell with respect to substrate 2202.In some other embodiment, conductor 2204 be highly reflective and as static reflecting body.

As indicated above, in certain embodiments, optics and electromechanical properties by the decoupling zero interferometric modulator, the side relative that reversible type configuration places reflectivity machinery minute surface 2210 with substrate 2202, conductor 2204 and dielectric layer 2206 with transparent observing surface 2216, and therefore be in optical path outside with the synergistic light of interferometric modulator.Therefore, different with the design of other interferometric modulator, the material that is used to make substrate 2202, conductor 2204 and dielectric layer 2206 need not to have any particular optical characteristic, but can be made by any suitable material.

In certain embodiments, the degree of freedom that is had on the material that is used to make substrate 2202, dielectric 2206 and conductor 2204 is selected advantageously provides the improvement to an interferometric modulator one or an above attribute, and wherein these attributes comprise (but being not limited to) size, physical durability, intensity, weight, elasticity, cost, manufacturing time/resource and electromechanical properties.For example, in certain embodiments, substrate 2202, dielectric 2206 and/or conductor 2204 can comprise with respect to previous interferometric modulator and dispose the opaque material that desired transparent material has better structural property.For example, has the material of a greater density and/or young's modulus (Young ' s modulus) applicable to substrate 2202, dielectric 2206 and/or conductor 2204, to allow the higher and less assembly of working strength in interferometric modulator than desired transparent material in the past.For example,, can advantageously reduce substrate thickness, and therefore reduce the integral thickness of interferometric modulator by using a metal substrate.In addition, the general reason of the flat screen display return of goods is the glass substrate breakage of these displays.As substrate, can advantageously prolong the serviceable life of display by the material that intensity is higher and comparatively durable.In certain embodiments, substrate 2202, dielectric 226 and/or conductor 2204 by density greater than 2.5g/cm ³, 3.0g/cm ³, 3.5g/cm ³, 4.0g/cm ³, 5.0g/cm ³, 6.0g/cm ³Or 7.0g/cm ³And/or young's modulus is made greater than the material of 60 gigapascals, 70 gigapascals, 80 gigapascals, 90 gigapascals, 100 gigapascals, 150 gigapascals, 200 gigapascals or 300 gigapascals.

The substrate of counter-rotating interferometric modulator can be made by any suitable material that comprises opaque and trnaslucent materials.Suitable backing material (for example includes, but is not limited to metal, stainless steel, aluminium), anodized metal, silicon (for example, silicon wafer), polysilicon, plastics, pottery, polymkeric substance are (for example, polyimide, MYLAR ), the compound of carbon (for example, graphite), glass and quartz and alloy and these materials.Comprise among some embodiment of an elastoplast or metal foil material at substrate, substrate has enough elasticity with electronic circuit (for example to be used to, thin film transistor (TFT), resistor, capacitor) be formed in " the scroll bar formula " or " web-type " processing procedure on the described substrate (for example, via deposition or photoetching technique).In some this type of embodiment, circuit may be made in and strides across than large tracts of land (for example, length is a meter or longer) and compatible with the subsequent manufacturing processes of large-scale interferometric modulator display.In one embodiment, described substrate is one to comprise the opaque plastics substrate of a passivation printed circuit board (PCB).In some this type of embodiment, described passivation printed circuit board (PCB) can be formed into and comprise desired circuit, and film is handled to be used on the passivation printed circuit board (PCB) and made interferometric modulator.Some this type of embodiment advantageously separates the manufacture process of circuit board with the manufacture process of interferometric modulator.Described substrate also can comprise the stepped construction of a plurality of backing materials.Described substrate can be rigidity or flexible.For example, an elastic substrate can comprise skim metal or plastic foil.Although the thickness range that does not limit herein to be quoted, substrate thickness can be about 0.1 millimeter to about 1.0 millimeters, and more preferably from about 0.3 millimeter to about 0.7 millimeter.The opaque substrate of skim can form operation by the metal such as tractive (for example, a sheet metal is stretched by or pass at least one mould so that it is thinner) and obtain.

Described substrate is preferably that moisture can't permeate and by suitably passivation.In various embodiments, on the surface of an opaque substrate, form a protectiveness passivation layer.In certain embodiments, form described passivation layer so that substrate is used for subsequent treatment (for example, forming conductor or dielectric layer).In some embodiment that uses a metal substrate, described passivation layer provides electrical isolation to prevent other structure and described metal substrate short circuit.It is an independent stratum that the protectiveness passivation layer need not, but can be formed at the top of described opaque substrate by preliminary Passivation Treatment.The Passivation Treatment of some embodiment includes, but is not limited to by chemical dissolution the mode pig iron or iron compound outside the surface removes, and most applications removes surface contamination with acid solution usually and handles, but can't the opaque substrate of appreciable impact itself.These processing comprise the purpose for the spontaneous formation that strengthens a protectiveness passivation layer, chemically to handle an opaque substrate such as the weak oxide thing of salpeter solution.In addition, described passivation step can comprise the spin coating of an oxidate and an organic complanation layer.

The dielectric layer of counter-rotating interferometric modulator can comprise any suitable material known in this technical field, such as metal oxide (for example, aluminium oxide or silicon dioxide), silicon nitride etc.As indicated above, the dielectric layer of a counter-rotating interferometric modulator need not to have any specific optical signature, and therefore can be selected to optimize its electrical properties the structural design and the material of described dielectric layer.For example, dielectric layer can by otherwise the opaque material (for example, opaque, highly reflective or trnaslucent materials) that is not used in the design of other interferometric modulator form.In addition, the dielectric layer of counter-rotating in the interferometric modulator can be substantially to influence the dielectric layer of same material in the interferometric modulator of optical property than dielectric layer wherein thicker.The dielectric layer that one thickness increases can be improved the various aspects of dielectric layer and/or interferometric modulator, such as electrical properties and manufacturing cost.One thicker dielectric layer also can provide improvement on material ranges, configuration and manufacture method, these material ranges, configuration and manufacture method can be used on the dielectric layer of interferometric modulator and other layer of observing on the surperficial opposite side, comprising substrate and conductor.For example, the galvanochemistry coating technology is used in and makes described conductor on the substrate, deposits a dielectric layer that thickens subsequently.In various embodiments, the dielectric layer thickness of counter-rotating interferometric modulator is greater than about 200 dusts, 300 dusts, 400 dusts, 500 dusts, 600 dusts, 700 dusts, 800 dusts, 900 dusts, 1000 dusts, 2000 dusts or thousands of dust.

Various structures and configuration be made and be can be applicable to the counter-rotative type interferometric modulator can by the whole bag of tricks.For example, can be by (for example using such as photoetching, deposition, such as " dry type " method of chemical vapor deposition (CVD) with such as the wet method of spin coating), shade, shade shade, lift-off processing and etching (such as, the dry method of plasma etching and wet method) semiconductor make technology and make the counter-rotative type interferometric modulator.The example of the proper technology compatible with embodiment described herein is at United States Patent (USP) the 6th, 040, description arranged in No. 937.

In one embodiment; counter-rotative type interferometric modulator shown in Figure 22 A is made by following steps: form a protectiveness passivation layer 2222 on opaque substrate 2202, and form a conductor 2204 and in addition patterning and etching subsequently by deposition of electrode material then.Conductor material for conduction and can comprise in this technology known any suitable material such as metal or doped semiconductor (such as, silicon) to have desired electric conductivity (such as, tin indium oxide).In certain embodiments, described conductor and substrate comprise a printed circuit board (PCB).Then, dielectric 2206 preferably is formed on the conductor 2204 by chemical vapor deposition (CVD) by deposition.Thereafter, deposition one in etching step subsequently with the sacrifice layer (not shown) that is removed.Described sacrifice layer can be any suitable material known in this technology, comprising (but being not limited to) molybdenum, silicon, tungsten or titanium.One etch stop layer is preferably used on the top of described sacrifice layer, described etch stop layer can be the material that more can resist subsequent than described sacrifice layer, and (for example can be metal, titanium, aluminium, silver, chromium), dielectric substance, it is preferably metal oxide (as aluminium oxide), or in this technology known any other suitable material.Described sacrifice layer forms first support column 2208 by using a light shield to be patterned and to be etched with, and carries out optional planarization process subsequently.Form machinery/specular layer 2210 by deposition (succeeded by optional planarization process) then.In certain embodiments, machinery/specular layer can comprise silicon nitride, silicon dioxide, magnesium fluoride or calcium fluoride as a substrate, and can hundreds of dust orders of magnitude such as the metallic film of aluminium, silver or any amount of metal and be formed on the described substrate.Described material can be selected based on spectral quality, electrical resistance property etc., and it can comprise known and employed any material in this technology.According to circumstances, can form such as metal oxide one the insulation and/or the reflection enhancement film.

One etch stop layer can be formed on the top of machinery/specular layer 2210.With another sacrifice layer deposition, patterning and be etched with and form second support column 2212 (succeeded by optional planarization process).The speculum surface layer 2214 that can comprise any suitable material known in Cr or this technology deposits and hyaline layer 2216 is deposited on it.After the above-mentioned manufacture process, (for example) carries out XeF ₂Be etched with and remove described sacrifice layer.XeF ₂Be F ₂The convenient source of gas.Other known in this technology etchant is (such as F ₂) can be used for substituting XeF ₂Or at XeF ₂Outside use extraly.

Fig. 6 A shows another example of a counter-rotative type interferometric modulator.As the embodiment among Fig. 5, on substrate 600 made electrode 602 by insulation film 604 and with film/minute surface 608 electrical isolations.Electrode 602 places relative part with sightingpiston and only as an electrode but not equally as a minute surface.Different with embodiment shown in Fig. 5, supporting construction 606 location that will be used for support membrane/minute surface 608 are so that hidden it by film/minute surface 608.In this way, effectively reduced the quantity of inertia area, because observer 614 only sees the minimum space between the regional and adjacent interferometric modulator that is covered by film/minute surface 608.Be different from the structure among Fig. 5 herein, wherein the film supporting construction be visible and from the color angle it constitutes inertia area and inaccurate zone.Fig. 6 A explanation is in the structure of nonexcited state, and wherein film/minute surface 608 contacts with second minute surface 612 that is supported by transparent superstructure 610.Fig. 6 B shows the same structure that is in actuated state, and wherein film/minute surface 608 is towards insulation film 604, electrode 602 and substrate 600 translations.

In Fig. 7 A, another geometric configuration that is used for interferometric modulator structure is described.This design class is similar to United States Patent (USP) the 5th, 638, the design of being showed in No. 084.That design depends on one and is subjected to the opaque plastics film of anisotropic stress so that it remains in a rolled state naturally.Applying a voltage makes described film flatten so that an optical gate based on MEMS to be provided.

The function of described device can be improved by making it become interferometric device.Show the distortion of interferometric modulator among Fig. 7 A, wherein stacks of thin films 704 with as United States Patent (USP) the 6th, 040, the dielectric/conductor/insulation body on the basis of the induced absorption device interferometric modulator design of discussing in No. 937 piles up similar.

In certain embodiments, aluminium film 702 and pile up 704 between apply a voltage and cause described film 702 to keep flat to prop up described piling up.During the manufacturing of some embodiment, aluminium film 702, also can comprise other reflective metal (silver, copper, nickel), dielectric or be coated with the organic material of the undercoat of a reflective metal, be placed on a thin sacrifice layer (not shown) and go up and make by using Wet-type etching or gas phase release tech its release.Aluminium film 702 further directly is deposited on the support teat 716 that light piles up on 704 by one and is mechanically secured on the substrate 700.Since this, thereby incide described teat and the described light that piles up overlapping part is absorbed, so that this inertia area mechanically becomes the zone of optics inertia equally.This technology has been eliminated the needs that use an independent black light shield in this design and the design of other interferometric modulator.

In certain embodiments, incident light 706 is absorbed fully or reflects the light 708 of characteristic frequency according to the gap of the layer that piles up.Described optics operating condition is similar to United States Patent (USP) the 6th, 040, the operating condition of the induced absorption device interferometric modulator described in No. 937.

Fig. 7 B shows the configuration of described device when not applying voltage.In certain embodiments, the residual stress in the film 702 makes it be curled into a coil that closely twines.Residual stress can apply by skim material 718 (as shown in Figure 7A) being deposited on film 702 tops, and described layer material 718 has high residual stretch stress.Chromium is one wherein can realize the example of higher stress with the film thickness that is low to moderate hundreds of dusts.Because film 702 no longer hinders its path, thereby allow light beam 706 to pass to pile up 704 (shown in Fig. 7 A).Then, light beam 712 intersects with plate 710.Plate 710 can remain in high absorbing state, and light beam 712 is absorbed in the case; Or remaining in high reflective condition (particular color or white), light beam 712 is reflected into 714 in the case.For the situation that modulator is used for a reflective display, light can be piled up 704 and be designed to be energized that Shi Qike reflects a particular color (if plate 710 is absorbefacient) or for absorbefacient (if plate 710 is reflexive) when described device.

Rotary excitation

Shown in Fig. 8 A, the geometric configuration of another interferometric modulator depends on rotary excitation.By being used in United States Patent (USP) the 6th, 040, the example procedure of being discussed in No. 937, the aluminium film and the insulator 806 that electrode 802, thickness are about 1000 dusts are made on the substrate 800.Support column 808 and rotary gemel 810 support flashboard 812, deposit one group of reflective film 813 on described flashboard 812.Described support flashboard can be the thick aluminium film of thousands of dusts.Its X-Y size can be in tens of orders of magnitude that arrive hundreds of microns.That described film can be interfere type and be designed to reflect particular color.Being similar to United States Patent (USP) the 6th, 040, the fixedly interfere type that the induced absorption device form of the induced absorption device of describing in No. 937 exists piles up and meets the demands.Described film also can comprise with the color pigment polymers impregnated, or it can be aluminium or silver-colored in broadband reflection to be provided.Electrode 802 and flashboard 812 for some embodiment are designed, and make to apply a voltage (for example, 10 volts) between the two and cause flashboard 812 rotation around the shaft portion ground of hinge 810 or fully described.Although all flashboards of a common given pixel are all as one man driven by the signal on the shared bus electrode 804, only flashboard 818 is shown as and is in rotation status.If the distance of hinge and electrode is designed to the feasible spring tension that during rotation overcomes hinge in the electrostatic attraction of some some place electrode, this flashboard may experience a kind of electromechanics hysteresis of form so.Therefore described flashboard will have two kinds of dynamo-electric steady state (SS)s.

In a transmissive mode of operation, flashboard can hinder incident light or allow it to pass.Fig. 8 A explanation incident light 822 is reflected back to observer 820 reflective-mode.In this pattern and in a state, if flashboard 812 is metallized, flashboard 812 reflected white-light so; If perhaps it is coated with interfere type film or pigment, it reflects the light of a particular color or the light of one group of color so.United States Patent (USP) the 6th, 040 has also been described representative thickness and gained color that an interfere type piles up in No. 937.In other state, allow light to pass flashboard 812, if wherein the surface-coated of substrate 800 has an absorbent films or the so described light of number layer film (not shown) to be absorbed in substrate 800.These films can comprise another pigment or one with organic film dipping and be designed to absorbefacient induced absorption device and pile up.On the contrary, flashboard 812 can be a surface of (for example, black) of high-absorbable and substrate 800 can highly reflective film 824 or optionally applied with pigment or interfere type film, to reflect the light of different colours with above-mentioned color reflective film.

In certain embodiments, the operation of described device can further strengthen by adding auxiliary electrode 814, and it provides extra moment of torsion for described flashboard when described auxiliary electrode 814 is charged to the electromotive force of the electrostatic attraction between induction auxiliary electrode 814 and the flashboard 812.Auxiliary electrode 814 comprises the combination of a conductor 814 and supporting construction 816.Described electrode can comprise the transparent conductor that a thickness is about 1,000 dusts, such as ITO (tin indium oxide).The materials processing that all structures and related electrode preferably are deposited on the single substrate surface on the whole obtains, and therefore its owing to being easy to manufactured to the better control in electrode gap space and being energized reliably.For example, if this electrode is installed on the relative substrate, so described device substrate will be combined with the variation on the relative substrate surface and produce several microns or more deviation.Therefore, the voltage that specific change requires that influences in the operating condition can change on tens of volts or more amount.The made of one piece structure is accurately followed the variation of substrate surface and can be subjected to the influence of this type of variation hardly.

Step 1-7 among Fig. 8 B shows the exemplary manufacturing sequence of rotary modulator.In step 1, substrate 830 has been coated with electrode 834 and insulator 832.Typical electrode and insulating material are aluminium and silicon dioxide, and wherein the thickness of each is 1,000 dusts.In step 2 with its patterning.In step 3, will sacrifice sexual isolation thing 836, and be several microns the material deposition of silicon and patterning as thickness and in step 4, it is applied with post/hinge/flashboard material 838.It can be the aluminium alloy or the titanium/tungalloy of about 1000 dusts of thickness.In step 5, with material 838 patternings to form bus electrode 844, support column 840 and flashboard 842.Deposition and patterning flashboard reflecting body 846 in step 6.In step 7, etch away and sacrifice the sexual isolation thing to obtain complete structure.Step 7 also shows the vertical view of described structure, wherein shows the details of the hinge that comprises support column 848, reverse arm 850 and flashboard 852.

On-off element

For comprising, only require the voltage level of lesser amt to come addressing one display as for some embodiment of the interferometric modulator of binary device.Driver electronics need not to produce the realization GTG and operates desired simulating signal.

Therefore, described electronic equipment can be implemented by using other method.Particularly, described driver electronics and logic function can be implemented based on the on-off element of MEMS by using.

Fig. 9 A illustrates the notion of some embodiment to Fig. 9 E.Fig. 9 A illustrates a basic switch tectonic block, makes an input end 900 be connected to output terminal 904 by applying a control signal 902.How Fig. 9 B explanation implements a line driver.The line driver of above-mentioned addressing scheme requires the output of three voltage levels.Appropriate control signals is applied to described line driver allows to select in the described input voltage level one to be used for output terminal 912.Input voltage is Vco11, Vco10 and the Vbias corresponding to 906,908 and 910 among Fig. 9 B.Similarly, for the row driver shown in Fig. 9 C, appropriate control signals causes one of selection or other input voltage level to be sent to output terminal 920.Input voltage is corresponding to the Vsel F1 of 914,916 and 918 among Fig. 9 C, Vsel F0 and ground voltage.How Fig. 9 D explanation is by using basic switch tectonic block 934,936,938 and 940 to construct a logical unit 932 (being a Sheffer stroke gate in this case).All these assemblies can one allow the mode of display subsystem shown in the shop drawings 9E and are configured and make up.Described subsystem comprises logic controller 926, line driver 924, row driver 928 and array of display 930, and it uses the above-mentioned addressing scheme among Fig. 3.

Manufacturing makes and might make a whole display system by using single processing procedure as the switching device of MEMS device.Described switch manufacture process becomes the subprocess of interferometric modulator manufacture process and is illustrated in Figure 10 H at Figure 10 A.

Show step 1 in Figure 10 A and Figure 10 B, it shows side view and the vertical view of starting stage respectively.The perspective direction of arrow 1004 indication side views.Substrate 1000 has in its surface deposition and the sacrifice sexual isolation thing 1002 of patterning, the thick silicon layer of about 2000 dusts.The step 2 of Figure 10 C and (from watching) shown in Figure 10 D with the identical perspective direction of Figure 10 A and Figure 10 B, a structural material, the aluminium alloy of number micron thickness be deposited and patterning to form source electrode bar 1010, drain electrode structure 1008 and door 1006.The corrosion resistant metal of hundreds of dusts (such as gold, iridium or platinum) is plated on the described structured material and keeps low contact resistance with the length of life at described switch.Etching notch 1012 moves to help be parallel on the plane of substrate plane in described bar in source electrode bar 1010.Figure 10 E has illustrated step 3 in Figure 10 H.Figure 10 E and Figure 10 G describe front view, and wherein directions are had an X-rayed in arrow 1016 indications, and Figure 10 F and Figure 10 H describe vertical view.In step 3, expendable material is etched away so that source electrode bar 1010 maintains the original state and moves freely.

Figure 10 F shows the switch that is in the non-actuated state 1014.Shown in Figure 10 H, in actuated state 1018, voltage source 1017 puts on a voltage between source electrode bar 1010 and the door 1006 (shown in Figure 10 D) and source electrode bar 1010 contacts drain electrode 1008 towards door 1006 offset straight to it, and then electrically contacts with draining to set up between 1008 at source electrode bar 1010.Incentive mode is parallel with substrate surface, therefore allow one with the compatible manufacture process of manufacture process of main interference formula modulator.In certain embodiments, this processing process also requires the less step of process than the switch that encourages on the direction that is used to be manufactured on perpendicular to substrate surface.

Two alternative designs of Figure 10 I and Figure 10 J illustrated planar mems switch.The difference of switch is in case a voltage is put between switch bundle 1028 and the door 1022 among Figure 10 I, switch bundle 1028 be used to provide drain 1024 with source electrode 1022 between contact.In the switch of Figure 10 H, electric current must pass the source electrode bar may influence switching threshold to drain electrode at Figure 10 A, makes the design of circuit become complicated.Switch among Figure 10 I is not this type of situation.Switch among Figure 10 J shows another enhancing mode.In this case, insulator 1040 is switch lever 1042 and contact lever 1038 electrical isolations, described contact lever 1038 when a voltage being applied between door 1032 and the switch lever 1042, provide drain 1034 with source electrode 1036 between contact.Insulator 1040 can be can use routine techniques to deposit and patterning such as SiO ₂Material.The use of this switch has been eliminated switch drive voltage and the needs that comprise the logical signal electrical isolation in the circuit of these switches.

The multidimensional photon structure

In general, interferometric modulator is characterised in that its element has useful optical property and can be by excitation member and moving with respect to self or other electric devices, mechanical organ or optical element.

The assembly of thin films that produces interference stack is a subset than the large level structure, and we should be referred to as the multidimensional photon structure.Put it briefly, we are defined as a photon structure as follows: it has the ability of revising electromagnetic wave propagation because of the relevant change of the geometric configuration of described structure and refractive index.Such structure has the dimension aspect, because it interacts with main light along one or more axle.Multidimensional structure also refers to photonic band gap structure (PBG) or photonic crystal.By texts that the people showed " Photonic Crystals " such as John D.Joannopoulos periodic photon structure has been described.

One dimension PBG can stacks of thin films form take place.For example, Figure 16 shows a manufacturing and a finished product thereof with the interferometric modulator of the form of dielectric Fabry-Perot (Fabry-Perot) wave filter.Stacks of thin films 1614 and 1618 (it can be the alternating layer of silicon and silicon dioxide, and each layer thickness is a quarter-wave) has been manufactured on the substrate 1600 to form an interferometric modulator structure of incorporating center cavity 16l6 into.In general, be continuous on described X of being stacked on and the Y direction, but on the Z axle, have the periodicity on the optical significance owing to the change of refractive (because it comprises the alternating layer with high index of refraction and low-refraction) of material.This structure can be thought one dimension because for the ripple of propagating along an axle (being the Z axle in this case) with its periodic maximum effect.

Figure 11 A and Figure 11 B have illustrated two kinds of forms of expression of two-dimensional photon structure.In Figure 11 A, can adopt wherein one (for example, the alloys of tantalum pentoxide and silicon dioxide) of a large amount of materials known of knowing of technology cause to make a micro-ring resonator 1102.Concerning being used for the device of the wavelength in 1.55 mu m ranges with optimization, typical dimensions is w=1.5 μ m, h=1.0 μ m and r=10 μ m.

Owing to be manufactured on the substrate 1100 (glass be a kind of may, though there are many other possibilities) on, described structure is a disc waveguide substantially, thereby refractive index and size w, r and h have determined light frequency and the pattern that will propagate therein.Described resonator (if correct design) can be used as the frequency selective filter that is coupled into broadband radiation wherein.In this case, described radiation is propagated in the XY plane by phasing signal 1101 indications usually.The one dimension analog of this device will be the fabry-perot filter that uses the individual layer minute surface to make.Two kinds of devices are because the optical cycle property of not showing high-order by the formed individual layer of minute surface " border "; Yet, on broad sense, it can be thought photon structure.

Showed more traditional PBG among Figure 11 B.The columnar arrays 1106 that is manufactured on the substrate 1104 has presented the cyclical variation of refractive index on X and Y direction.If electromagnetic radiation is propagated in the XY plane indicated by phasing signal 1103, it will be the most influenced propagating the electromagnetic radiation of passing this medium so.

Because its periodic property, the array of Figure 11 B is shared the attribute (except that the dimension of its higher-order) of one dimension stacks of thin films.Described array is for being periodically along passing described array some axle in described XY plane, and refractive index changes between the refractive index of the refractive index of column material and material around (being generally air).The optic response (minute surface, bandpass filter, boundary filter etc.) to the wide scope of the radiation effects of propagating is made in the suitable design permission of this array of the variant of the principle that utilization is identical with being applied to the stacks of thin films design in the XY plane.Array 1106 among Figure 11 B is included in a singular point or the defective 1108 of the form of the different post in size and/or refractive index aspect.For example, the diameter of the comparable wash-out of diameter of this post (its diameter is about quarter-wave) is bigger a little or less a little, or it can be a different materials (perhaps being that air is to silicon dioxide).The size of population of described array is by the optical system of needs manipulation or the size decision of assembly.Depend on desired operating condition, the form that described defective also can lack a post or a plurality of post (delegation) takes place.This similar is in the dielectric fabry-perot filter of Figure 16, but it only works in two dimension.In this case, described defective is similar to cavity 1616 (as shown in figure 16).Wash-out is similar to adjacent two dimension and piles up.

The relative dimensions of the structure of Figure 11 B can be that the row x of sx, the row y that spacing is sy (can with any one thinks lattice constant among both), column diameter d and array height h indicate by spacing.Be similar to quarter-wave and pile up (one dimension equivalent), column diameter and spacing are about quarter-wave.Height h determine by desired communication mode, its be only used for single-mode propagation wavelength 1/2nd.The size of structure and its equation that influence of light is interrelated have been known for us and be recorded in the texts that the people showed " Photonic Crystals " such as John D.Joannopoulos.

This structure also can use the same material and the technology that are used to make resonator 1102 (shown in Figure 11 A) to make.For example, can adopt routine techniques with single silicon deposited film on a glass substrate and make its patterning, and adopt reactive ion etching to be etched with the row that produce high aspect ratio.For the wavelength of 1.55 μ m, the diameter of post and spacing can be about 0.5 μ m and 0.1 μ m respectively.

Photon structure also make might be under restricted geometrical constraint direct radiation.Therefore, it is very useful in following application: some frequency or the frequency band that need again guiding and/or selective light when dimension constraint is very strict.Can make the optical waveguide that channel transfer is propagated in the XY plane, it can force light to carry out 90 degree in less than the space of light wavelength and turn.This can create by (for example) and finish with the post defective with the linear rows form that can be used as waveguide.

Explanation one three-dimensional structure in Figure 12.The 1202 pairs of radiation of propagating in XY, YZ and XZ plane of three-dimensional periodic structure that are manufactured on the substrate 1200 are worked.Can obtain multiple light reaction by suitable project organization and its component material of selection.Use identical design rule, yet can use herein three-dimensionally.Defective occurs with the form of point, line or zone (with respect to Points And lines), and they are different with surrounding medium aspect size and/or refractive index.In Figure 12, defective 1204 is the single-point element, but it also can be element linear or that be linearity or the element of zone and point or the combination in zone.For example, but " linearity " of manufacturing place defective or " snakelike " array make it follow any three-dimensional path that passes PBG, and are used as the waveguide of the strictness constraint of a pair of light of propagating therein.But described defective is usually located at inner shows from the teeth outwards for purposes of illustration.The relative dimensions of this structure has been described in the drawings.The diameter of PBG, spacing and material are what rely on to use fully, yet, but the also design rule of application of aforementioned and equation.

Three-dimensional PBG manufactures more complicated.If be applied to three-dimensional, the conventional method that is used for making one dimension or two dimensional character will be referred to deposit, the repeatedly application of patterning and etch cycle to be to realize the third dimension in described structure.The manufacturing technology that is used for the construction schedule three-dimensional structure comprises: holographic technique wherein is exposed to a photochromics one standing wave and duplicates described ripple with the form of the variations in refractive index of material itself; Between the depositional stage of material, use the self-organization organic material or, promptly rely on inherent viscosity of some copolymerization material and the array that directional nature is made cylindricality or spherical structure from combined material; Ceramic methods, it can relate to incorporates the supply of the spherical structure of controlled size into a liquid suspension, and it is in case described structure is just organized in curing, and it can remove by dissolving or high temperature; The combination of these methods; With other technologies known in this technology.

The copolymerization self-combination technology is especially interesting, because it all is low temperature and needs minimum or do not need photoetching.In general, this technology relates to a polymkeric substance (example is polyphenyl quinoline-block-polystyrene (PPQmPSn)) is dissolved in the solvent such as carbon disulphide.Solution coat on a substrate and allow after the described solvent evaporation, is obtained inflating the hexagonal array of the tight filling of polymerization ball.Described method can repeat repeatedly producing multilayer, and the number of repeating units of component (m and n) that can be by the manipulation polymkeric substance is controlled the cycle of described array.The effect that the colloid that introducing comprises metal, oxide or semi-conductive nanometer size can have the further minimizing array cycle and increase the refractive index of polymkeric substance.

Can manipulate directly at the material of submicron-scale such as the instrument of focused ion beam or atomic force microscope by use and introduce defective.The former is used in and removes in the very little selected area or add material or be used to change the optical property of material.Generating material removes when leaving material such as sputter on by the employed energy particle Shu Zaiqi of focused ion beam tool path.Generating material adds when focused ion beam is passed the volatile metal of containing gas (such as tungsten hexafluoride (for the tungsten conductor) or silicon tetrafluoride (for the silicon dioxide of insulation)).Described decomposing gas, and component is deposited on beam and contacts part with substrate.The atomic force microscopy is used in mobile material on a part yardstick.

Other method relates to uses the technology be called little electro-deposition, and it is described in detail in United States Patent (USP) the 5th, 641, in No. 391.In the method, single microelectrode can be used for defining the three-dimensional feature of the submicron resolution that uses multiple material and substrate.The metal " defective " of oxidable subsequently deposition in this way can use above-mentioned technology to make the PBG array to form a dielectric defect around described dielectric defect.

During also can be used as the formation that is used at PBG, the existence on the substrate (making PBG thereon) produces the template of the defective in the PBG with the surface characteristics of the form of the pattern of other materials.This is especially relevant with the PBG technology (mainly referring to from combined method) to the substrate condition responsive.According to the specific nature of described technology, these features can promote or be suppressed at " growth " of the PBG in the seed height restricted area on every side.With the method, can produce the pattern of defective " seed " and form PBG subsequently, wherein defective results from its inside in the PBG forming process.

Therefore, can further widen the device classification that is known as interferometric modulator by incorporating modulator itself into than the multidimensional photon structure of big kind.It is that the photon structure of any kind of of staticizer becomes dynamically in essence that geometric configuration that now can be by changing photon structure and/or the proximity that changes itself and other structure make.Similarly, can come the tuning micromechanics fabry-perot filter (as shown in figure 16) that comprises two minute surfaces (each all is the one dimension photon structure) by changing cavity width statically.

Figure 13 shows two examples of the interferometric modulator design of incorporating two-dimentional PBG into.In Figure 13 A, a sectional view 1300 shows the film 1304 of a self-supporting, and the micro-ring resonator 1306 that its use is installed on the side of faces substrate 1303 is made.The waveguide 1301 that is positioned at substrate bulk 1303 inside is plane and parallel with 1302, and can use the known technology manufacturing.In Figure 13 A, described interferometric modulator is showed non-being subjected under the driving condition in position, has a limited air gap (numeral) between little ring and substrate.Making described little ring makes that the paired waveguide of its position and substrate below is overlapping and aims at.The size of little ring is identical with example among above-mentioned Figure 11 A.The size that xsect 1305 is showed waveguide, its size can be w=1 μ m, h=0.5 μ m and t=100nm.At the non-driving condition that is subjected to, light 1308 is interference-free propagation in waveguide 1302, and identical with input 1308 on output beam 1310 spectrum.

Drive described interferometric modulator and contact the optics operating condition that has changed described device closely with substrate and waveguide to force little ring.The optically-coupled that can will propagate in waveguide 1302 by the dissipation phenomenon now encircles in a subtle way.Described little ring (if size suitably) is as an optical resonantor, and it is coupled a selected frequency of self-waveguide 1302 and is injected into waveguide 1301.This is showed among Figure 13 B, and wherein light beam 1312 is shown as on the direction opposite with input beam 1308 and output beam 1310 and propagates.This device can be used as a frequency selective switch, and it makes described structure come to select specific wavelength from a waveguide with other members that the waveguide of below contacts closely by applying voltage or application need.Paper " Vertically Coupled Microring Resonator Channel Dropping Filter " people such as B.E.Little, IEEE Photonics Technology Letters, 1999 the 11st volume the 2nd interim static versions of having described this geometric configuration.

Another example has been described in Figure 13 C.In this case, a pair of waveguide 1332 and 1330 resonator 1314 are manufactured on the substrate with the form of a cylindricality PBG.Described PBG is the uniform array of post, wherein defines waveguide (each waveguide delegation) by removing two row, and defines resonator by removing two posts.Vertical view 1333 provides the more details of the structure of waveguide 1330 and 1332 resonator 1314.Size depends on relevant wavelength and employed material.For the wavelength of 1.55 μ m, the diameter of post and spacing can be about 0.5 μ m and 1 μ m respectively.The communication mode that height h decision will be supported is and if only propagate single-mode it should be a bit larger tham half wavelength so.

Making on the inside surface of film 1315 has two independently posts 1311, and it is directed downwards and has and identical size and the identical materials (or being the suitable material of an optics) of post on the substrate.Resonator and post are designed to replenish mutually; Settling post part corresponding post that lacks in described resonator on the described film.

When interferometric modulator is in the non-state that is driven, between PBG and film post, there is the limited vertical air gap 1312 of hundreds of at least nanometers, and therefore optical interaction does not take place.The resonator center pillar lack similar defective effect, cause the coupling between waveguide 1330 and 1332.The device of being showed in installing the used and Figure 13 B that is risen described in this state is identical, and the light 1328 of the selected frequency of propagating along waveguide 1330 injects waveguides 1332, and propagates on the direction 1329 opposite with input beam 1328 and output beam 1326.

Yet the driving interferometric modulator contacts with PBG has put into resonator with post, and this has changed its operating condition.Eliminated the defective of described resonator by placing the film post.Device role in this state is identical with the device shown in Figure 13 A, and wherein light 1328 is propagated under glitch-free situation.

At the paper " Channel drop filters in photonic crystals " of H.A.Haus, Optics Express, 1998 the 3rd volume the 1st interim static versions of having described this geometric configuration.

Optical switch

In Figure 14 A, one device based on the induced absorption device comprises the aluminium film 1400 (being about tens of to hundreds of square microns) of a self-supporting, it is suspended on the material stacks 1402, describedly piles up 1402 combinations that are included in the metal and the oxide of patterning on the transparent substrates 1404.Be described in United States Patent (USP) the 6th, 040, the film that uses in the induced absorption device modulator in No. 937 can be used for this purpose.Film on the substrate also can comprise a transparent conductor, such as ITO (tin indium oxide).Described structure can be incorporated a smooth metallic film on its downside, be the molybdenum or the tungsten of hundreds of dusts such as thickness.

Dispose the material of some embodiment so that described device is reflected in the driving condition non-being subjected in a particular wavelength region, absorbability is arranged very much but when described film is driven to contact, become.Side view 1410 has been showed the device view of seeing into the side of substrate 1412.Light beam 1408 passes substrate 1412 with certain arbitrarily angled propagation and is incident on and is shown as on the non-interferometric modulator 1406 that is subjected under the driving condition.Suppose described light frequency corresponding at the non-reflector space that is subjected to the interferometric modulator under the driving condition, then described light is reflected with a complementary angle 1411 and propagates and leave.Side view 1414 has been showed at the identical interferometric modulator that is subjected under the driving condition.Because described device has absorbability now very much, so the light of incident on it no longer is reflected by the absorbed in the piling up of interferometric modulator.

Therefore, in this configuration, interferometric modulator can be used as the optical switch of the light of propagating in substrate, wherein makes described interferometric modulator on described substrate.The described substrate of machining with form high polish, highly parallel (to relevant light wavelength 1/10 in) and than the surface of the thick manyfold of optical wavelength.This allows described substrate as one substrate/waveguide, the repeatedly reflection of experience from a surface to another surface because light beam is propagated on the direction that on average is parallel to described substrate.Light wave in this structure often is called the substrate guided wave.

Figure 14 B shows the variation on this theme.Film 1422 is patterned in through Optical stack 1424 and makes film 1422 no longer be rectangle but narrow down gradually towards an end 1420 on the substrate 1426.When the mechanical spring constant of described structure when its length keeps constant, electrode area reduces.Therefore, but the amount of the power that static applies is lower at narrow end 1420 places of taper.If apply a voltage that increases gradually, film 1422 will be at first begins to encourage and along with the increase excitation of voltage will be advanced along arrow 1428 in thicker end.

Concerning incident light, interferometric modulator is operating as an absorption region with area of the value that depends on the voltage that applies.Side view 1434 is showed the effect of propagating the substrate of light beam when not applying voltage.Corresponding reflective surface area 1429 Figure 143 5 (its angle from incoming beam is showed interferometric modulator) has been showed " footprint " 1431 of the light beam that is overlapped on the reflective surface area 1429.Because entire emission area 1429 is non-absorbent, thus light beam 1430 with the form of light beam 1432 from interferometric modulator 1428 be reflected (having minimising loss).

In side view 1436, so apply an interim magnitude of voltage and decay to a certain extent for absorbability reflecting bundle 1440 partly because the reflective surface area of showing among Figure 143 7 1429 is existing.Figure 143 8 and 1439 shows because the result of excitation fully that reflective surface area 1429 causes for absorbability fully and the complete attenuation of described bundle.

Therefore, by using a taper geometry, can be made into a variable optical attenuator, its reaction is directly relevant with the magnitude of voltage that is applied.

Another kind of optical switch has been described in Figure 15 A.Make support frame 1500 by the metal that such as thickness is the aluminium of thousands of dusts, it is electrically connected to minute surface 1502 in this way.Minute surface 1502 is present on the transparent optical bearing 1501, and described bearing is attached to and supports 1500.Minute surface 1502 can comprise the combination of single metallic film or metal, oxide and semiconductive thin film.

Bearing 1501 is by having identical with substrate 1504 or making than its high refractive index materials.This can be SiO ₂(identical refractive index) or have the polymkeric substance of a variable refractive index.Machining bearing 1501 makes that minute surface 1502 is supported with miter angle.Can use the technology that is known as the simulation photoetching to finish the machining of bearing 1501, described technology relies on a light shield, and described light shield has according to its optical density (OD) and variable continuously feature.By suitable variation this density on a special characteristic, can in a photoresist that uses this light shield to expose, form 3D shape.Described shape can then be transferred to other materials by reactive ion etching.Whole subassembly hangs on conductor 1503 tops, and described conductor 1503 patterning enters below substrate 1504 so that " window " 1505 that is not subjected to stop to be provided.That is, conductor block 1503 is removed in etching, makes to expose the window 1505 that comprises naked glass.Can encourage the switch that is similar to other interferometric modulators to contact with described substrate/waveguide to drive whole subassembly.Side view 1512 has been showed the optics operating condition.Light beam 1510 is propagated in described substrate with the angle that becomes 45 degree with normal, and described angle prevents beyond its border of propagating out substrate.This be because miter angle greater than the angle that is known as critical angle, described critical angle allows to treat that the principle of interface 1519 places of reflected beams 1508 between substrate and external agency by total internal reflection (TIR) is reflected and has only minimum loss or free of losses.

The TIR principle relies on Si Nieer (Snell) law, but basic demand be refractive index at the substrate external agency must be littler than the refractive index of substrate.In side view 1512, described device is shown as to have and is in the non-state of switch that is driven 1506, and light beam 1510 is propagated in not interrupted mode.Shown in side view 1514,, changed beam path 1518 when switch 1506 excited target are when contacting with substrate 1516.Because described bearing has the refractive index more than or equal to substrate 1516, so light beam is no longer experiencing TIR at the interface.Beam propagation goes out substrate 1516 and enters the optics bearing, locates it by direct reflection at it.Minute surface becomes miter angle, makes reflecting bundle 1518 now with the angular spread vertical with the plane of substrate.The result is: so it can be propagated and passes substrate interface because light no longer satisfies the TIR criterion, and can be caught by fiber coupler 1520, described fiber coupler 1520 is installed on the opposite side of substrate/waveguide.At people's such as X.Zhou paper " Waveguide Panel Display UsingElectromechanical Spatial Modulators " SID Digest, in the XXIX volumes in 1998 similar notion has been described.Design this specific device and be used for the emissivity display application.Minute surface also can a reflection grating form implement, it can use the conventional etched surface that enters bearing of patterning techniques.Yet the method is owing to a plurality of orders of diffraction (it is not a problem for the film minute surface) are showed wavelength dependency and loss.In addition, available alternative optical texture is replaced minute surface, and it has separately attribute and shortcoming.These structures can be categorized as refraction, reflection with diffraction, and can comprise lenticule (transmission and reflectivity), concave mirror or convex lens, diffraction optical element, holographic optical elements (HOE), prism and can use the optical element of any other form that micro-fabrication technology makes.Using one to substitute under the situation of optical element, according to the character of micro optical element, bearing and its give angle on the described optical element can be unnecessary.

This variation on interferometric modulator is as the decoupling zero switch of light.Broadband radiation or characteristic frequency (if minute surface design ground is correct) can arbitrarily be coupled out outside described substrate/waveguide.Side view 1526 is showed a more detailed embodiment, wherein becomes an extra fixedly minute surface 1528 of miter angle to be manufactured on the opposite side of substrate 1524 with respect to decoupling zero switch 1506.This minute surface is different with described switch because it can not be energized.Two kinds of structural angles, the light 1522 of effectively separating decoupling substrate 1524 by switch 1506 can be coupled into substrate (dotted line) again by the minute surface 1528 that is coupled again by careful selection minute surface.Yet, having the different directed minute surfaces of coupling again 1528 in the XY plane by being manufactured on, described minute surface combination can be used for again on any new direction of direct light in substrate/waveguide.The combination of these two kinds of structures will be called director switch.The minute surface that is coupled again also can be used for being coupling in any light that propagates into substrate on the direction perpendicular to the surface.

Figure 15 B shows an embodiment of an array of director switch.See down on the substrate 1535, linear array 1536 be with perpendicular to the angle on XY plane with photoconduction an array to the fiber coupler that enters substrate 1535.Be coupled again minute surface an array (invisible) directly with respect to described fibre coupler arrays location to couple light into substrate 1535.Make an array that director switch is arranged on the surface of substrate 1535, wherein 1531 is a representative example.Locating described switch in a mode makes the light that is coupled into substrate from any one of input optical fibre coupling mechanism 1536 can be directed on any one of output optical fibre coupling mechanism 1532.In this way, described device can be used as one N * N optical switch, any one during it can be exported the difference that any any one of counting in female difference input switch to any number.

Adjustable filter

Turn back to Figure 16, it has showed an interferometric modulator with the form of adjustable fabry-perot filter.In this case, conductive contact pad 1602 with dielectric minute surface 1604 and 1608 and sacrifice layer 1606 deposited and be patterned on the substrate 1600.This can be that the silicon thin film of a plurality of 1/2nd wavelength is formed by thickness.Described minute surface can comprise and has alternately the height refractive index materials (two examples are TiO ₂(high index of refraction) and SiO ₂(low-refraction)) pile up.One deck in the described layer also can be air.Deposition and patterned insulation layer 1610 make second contact mat 1612 only contact minute surface 1608.Patterning minute surface 1608 makes and stays a minute surface " island " 1614 by support 1615 connections subsequently.The lateral dimensions on described island is mainly by determining with its size with interactional light beam.This is about tens of to hundreds of microns usually.Partly the chemical etching sacrifice layer 1606, but in the mode of the bearing 1613 that stays enough sizes so that mechanical stability to be provided, probably be about tens of square microns, if, applying voltage so conducting electricity between contact mat 1602 and 1612, the bottom light dope of the top layer of minute surface 1608 and minute surface 1604 will cause the island displacement of described minute surface.Therefore, the light reaction of described structure is adjustable.

Figure 17 A shows the application of this adjustable filter.Adjustable filter 1704, minute surface 1716 and anti-reflection coating 1712 on the end face of substrate 1714, have been made.One minute surface 1717 also is manufactured on the bottom surface of described substrate, for example by making such as the metal of the gold that 100nm is thick at least.Being installed on the substrate end face is an optics superstructure 1706, and its inside surface (for example) is by adding a reflection gold thin film but at least 95% reflection and also support an angled minute surface 1710.In this device, with certain angular spread greater than critical angle, described critical angle is about 41 degree to light beam 1702 for glass substrate and air dielectric in substrate.Therefore, needing minute surface 1716 light beam 1702 to be remained in the border of substrate/waveguide rebounds.This configuration allows to have big dirigibility in the selection of light propagation angle degree.

Light beam 1702 is incident on the fabry-perot filter 1704, and the light 1708 of its transmission one characteristic frequency reflects residue light 1709 simultaneously.Be incident on the reflectivity superstructure 1706 and by the frequency 1708 of transmission and be reflected, and reflex to once more on the angled minute surface 1710 by minute surface 1716 from it.Minute surface 1710 is for what tilt, makes light by wave filter 1704 transmissions with the normal angle guiding anti-reflection coating 1712 with respect to substrate 1714, and passes substrate 1714 and enter external agency.The frequency 1709 that is reflected is reflection between minute surface 1717 and 1716 in substrate 1714, and finally passes substrate 1714 and enter external agency through 1718 reflections.Therefore described device is generally as a wavelength selective filters.

Can use multiple technologies to make superstructure.A kind of technology comprises that whole micromachined silicon sheet is to form the accurate degree of depth cavity of (for example, being about the thickness of described substrate and hundreds of at least micron).After the described cavity of etching, make angled minute surface, and use multiple silicon/glass combination technology that whole subassembly is attached on the substrate of glass for example.

Figure 17 B is meticulousr version.In this example, add second adjustable filter 1739 so that an extra frequency selector channel to be provided, it allows to select independently two independent frequencies.Light beam 1730 passes substrate 1744 and is incident on first fabry-perot filter 1732, and the light 1734 of its transmission one characteristic frequency reflects residue light simultaneously.Be incident on the minute surface 1736 and by the frequency 1734 of transmission and be reflected, and reflex to once more on one of them of two detecting devices 1738 by one second minute surface from it.In substrate 1744, the frequency that is reflected is reflected on second fabry-perot filter 1739 between a minute surface 1740 and an extra minute surface, and the light of its transmission one characteristic frequency and reflection residue light pass substrate 1744 and enters external agency.Frequency by 1739 transmissions of second wave filter is reflected on the detecting device 1738 between a reflectivity superstructure 1742 and an extra minute surface.Detecting device 1738 allows the integrated functionality of a higher degree.

Figure 17 C incorporates integrated circuit into.Light beam 1750 is coupled into substrate 1770 and is incident on the adjustable filter 1752.This wave filter is different with the wave filter of Figure 17 A and Figure 17 B because it comprises the lip-deep minute surface 1756 that is coupled again of the removable minute surface that is manufactured in described wave filter.The angle of described minute surface makes the existing form with light beam 1758 of the frequency of being selected by wave filter 1752 directly with the vertical angle substrate that is coupled back.Be contained in residual frequency in the light beam 1750 and propagate and to run into the minute surface 1760 that is coupled again up to it, the angle of described minute surface 1760 make its present one with the vertical surface of propagation light beam.Therefore described light beam turns back out its path outside the described device, states light beam in its place and can be used by other devices that optics connects.Light beam 1758 is incident on the IC1764 of the information in described light beam that can detect and decode.IC 1764 can FPGA or other forms based on the integrated circuit of silicon, silicon/germanium or gallium arsenide, and it can obtain an advantage from the light that is directly coupled to beared information.For example, can rely on two-way light path 1722 between IC 1764 and 1762, to form a high frequency range optical interconnection.This by minute surface 1766 and 1788 and the combination of the minute surface 1768 that is coupled again form.If IC incorporates into such as in vertical cavity surface emitting laser (VCESEL) or the light emitting diode (LED), so can be luminous by IC.Light can be by the optical sensitive component detection of any number, and the character of wherein said assembly depends on the semiconductor technology that is used to make IC.Also can modulate the light that is incident on the IC by the lip-deep interferometric modulator of the IC that is manufactured on the substrate that is exposed to propagates light.

Adopt the optical mixer of substrate waveguide

Figure 18 A and Figure 18 B are the explanations of the binary channels optical mixer implemented of substrate/waveguide of adopting a TIR version.Figure 18 A shows described schematic representation of apparatus.The light that contains a plurality of wavelength has two kinds of specific wavelengths 1801 and 1803, its separated and two independently variable attenuators 1805 that lead.It outputs to several possibility passages 1807 then or enters in the diaphragm 1813.

Figure 18 B shows an embodiment.Input light passes fiber coupler 1800 and imports in the described device, passes anti-reflection coating 1802 and utilizes the minute surface 1806 that is coupled again to be coupled into substrate 1804.Be coupled again minute surface with photoconduction on adjustable filter 1808, isolate frequency lambda 1 and with all unselected frequencies 1814 guiding one second adjustable filters 1809, it isolates frequency lambda 2, and wherein residual frequency (light beam 1819) is further propagated by TIR downstream.Along path by the frequency lambda 1 of adjustable filter 1808 transmissions, described light (light beam 1815) is led back the substrate waveguide again by minute surface 1810, pass the AR coating, and by in the minute surface 1811 that is coupled again (it is with the light beam 1815 guiding attenuators 1812) substrate 1804 that is coupled back again.Led in (light beam 1817) substrate 1804 by a minute surface that is similar to minute surface 1810 location by the frequency lambda 2 of second adjustable filter, 1809 transmissions, wherein said light beam is along a path that is parallel to light beam 1815 again.Light beam 1815 and 1817 is propagated by TIR in substrate 1804, and it relies on light beam to relocate device 1816 and displacement.

Light beam relocates device 1816 and produces the result identical with the minute surface that is coupled again, except described minute surface is parallel to the substrate surface.Because described minute surface hangs on the substrate surface top with fixed range, so the position of the incidence point on the relative substrate interface moves right.This displacement is directly by the described height decision that relocates device.The light beam 1819 that contains not the wavelength of being selected by second adjustable filter 1809 also relies on and relocates device 1818 and displacement.The result is for when all three light beams (1815,1817 and 1819) are incident on an array of decoupling zero switch 1820 and 1824, and it separates comparably.Its two optical combiners that are used for optionally described light beam being led again (1828 are one of them) one in, or enter detecting device/absorber 1830.Optical combiner imports light respectively output optical fibre coupling mechanism 1822 and 1826 from decoupling zero switch 1820 and 1824.Can use multiple technologies to make optical combiner.A kind of method is to adopt reactive ion etching that polymer thin film is patterned to the form of pillar, and wherein its top is formed in the lens.Absorber/the detecting device that comprises the semiconductor device that is attached to described substrate is in order to allow to measure the output power of frequency mixer.Optics superstructure 1829 supports outer optical modules and provide a sealed package for described frequency mixer.

The combination of a plane interference formula modulator and a substrate waveguide provides a series of optical devices that are easy to make, dispose and be coupled to the external world, because described device is present on waveguide and/or the superstructure and can be in waveguide and the light of propagating between described waveguide and described superstructure operation.Because all component is all with a planar fashion manufacturing, thus can realize scale economics by whole manufacturing the on large tracts of land, and different part can be easily and accurately aim at and combination.In addition, because all driving components are showed excitation on perpendicular to the direction of substrate, so it is made and drive with respect to relative being easy to more detailed on-plane surface minute surface and the light beam.Initiatively electronic package can be attached in superstructure or the substrate/waveguide with enhancement function.Perhaps, aggressive device can be fabricated to the part of superstructure, if it is especially true when being semiconductor such as silicon or gallium arsenide.

The mode of printing manufacturing process

Because its for the plane and because many layers does not require the semi-conductor electricity characteristics that need special substrate, so interferometric modulator and many other MEMS structures can be utilized the manufacturing technology that is similar to printing industry.The technology of these types is usually directed to flexibility and is " substrate " of the continuous slice form that (for example) formed by paper or plastics.Be known as reel technology, it is usually directed to send into the continuous backing material of the volume of one in a series of instruments, and each instrument optionally is coated with printing ink so that construct a full color figure image in regular turn on substrate.Because use this technology can generate product at a high speed, these technologies are to make the people interested.

Figure 19 thisly is applied to the manufacturing of single interferometric modulator and by the sequential schematic of expanded application in the manufacturing of interferometric modulator array or other micro electromechanical structures.Reel source 1900 is backing materials of volume a such as transparent plastic.Only contain single device for purposes of illustration from the representative area 1902 on one section material of this roll of material.Coining tool 1904 is pressed into plastic tab with a recess patterns.This can have the metal form of suitable projection pattern to finish by an etching on it.

Described metal form is installed on the drum, and described drum is pressed on the thin slice with enough pressure so that described plastic deformation and form depression.Figure 190 6 is illustrated this.Coating machine 1908 adopts and comes the deposition of thin material layer such as known film depositing operations such as sputter or evaporations.The result obtain one comprise oxide, metal, oxide and sacrificial film four films pile up 1910.These materials design corresponding to induced absorption device interferometric modulator.1912 distribution of one instrument, curing and exposure photoresist are with these layers of patterning.In case defined pattern, just in instrument 1914, carried out film etching.Perhaps, can use a technology that is known as laser ablation to finish patterning.In this case, allow laser and the synchronous mode scan laser on material of mobile substrate with one.The frequency of laser and power make it associated materials can be evaporated to several microns feature sizes approximately.The frequency of tuning described laser make its can be only with substrate on material interact and do not interact with substrate itself.Because it is too fast that ground is carried out in evaporation, so only to the heating of substrate minimum degree ground.

In this device example, use identical pattern to come all films of etching.This is found in 1918, wherein peels off described photoresist after application tool 1916.Instrument 1920 is another deposition tools, and its deposition will become the structural sheet of interferometric modulator.Aluminium is a kind of candidate material of this layer 1922.This material also can comprise to be showed least residue stress and can adopt multiple PVD and organic material that the PECVD technology deposits.Subsequently respectively tool using 1924,1926 and 1928 with this layer patternization, etching with peel off photoresist.Instrument 1930 is used to etch away sacrifice layer.If this layer is a silicon, can use the gas phase etchant XeF that is used for this purpose so ₂Finish this work.The result obtains forming the self-supported membrane structure 1932 of interferometric modulator.

Finish the encapsulation of gained device by the end face that flexible flake 1933 is attached to backing sheet.This also can supply by using spreading implement 1934 to be coated with such as the continuous volume 1936 of the sealing film of metal.Use combination tool 1937 that two thin slices are bonded together with the device 1940 after the encapsulation that produces gained.

Stress measurement

Residual stress is a key element in MEMS structure Design and the manufacturing.Interferometric modulator and wherein in manufacturing process machinery discharged in other structures of structure member, residual stress determines the gained geometric configuration of described parts.

As the interferometric modulator of an interferometric device variation sensitivity to the gained geometric configuration of removable film.Through reflection (or under other design conditions for through transmission) color is the direct function of the air-gap separation of described cavity.Therefore, can cause unacceptable change color along the variation on this distance of a cavity length.On the other hand, this character is the useful tool of the residual stress of decision described structure itself, because change color can be used for determining the variation and the degree of film distortion.Known any distortion of materials state allows the residual stress in the described material of decision.Microcomputer modelling program and algorithm can use the 2-D data on deformation state to decide this residual stress.Therefore, interferometric modulator structure can provide an instrument that is used to carry out this assessment.

Figure 20 A shows the example that how can use interferometric modulator in this way to Figure 20 F.Showed following interferometric modulator from the side: 2004 among 2000 and 2002 among Figure 20 A, Figure 20 C and 2006 and Figure 20 E in 2008 and 2010, showed simultaneously and passed the identical interferometric modulator that Figure 20 B, 20D and the substrate among the 20F are watched from the bottom side respectively.The interferometric modulator on the left side is two cantilevered fashions, and the interferometric modulator on the right is the single-cantilever form.Under the situation of Figure 20 A, described structured material does not have residual stress, and two films are not showed distortion.Shown in Figure 20 B, pass the device displaying one even color that substrate is watched, this is by thickness decision of the wall that forms described device thereon.Interferometric modulator 2004 among Figure 20 C and 2006 shows to have a stress gradient, its at the top than having more force of compression in the bottom.The described structural membrane of result is showed a distortion, and has shown the character of color change in the upward view of Figure 20 D.Color region 2018 corresponding to the zone line of the film of interferometric modulator 2004 can be redness, because its side regions 2018 than film is farther apart from substrate.On the contrary, if be green corresponding to the color region 2016 of the part of the left side film of interferometric modulator 2006, the color region 2014 corresponding to the part of the right side film of interferometric modulator 2006 can be blueness so, because its more close substrate.

Interferometric modulator 2008 in Figure 20 E and 2010 displayings are in the following state: stress gradient is showed higher tension stress at the top ratio in the bottom.Correspondingly be out of shape described structure member, cause the change color of being showed in the upward view as Figure 20 F.In this case, can be blueness corresponding to the zone 2024 of the center section of the film of interferometric modulator 2008, the part corresponding to the film side regions 2024 of the exterior section of the film of interferometric modulator 2008 can be green simultaneously, because it is farther apart from substrate.Similarly, if be red corresponding to the zone 2020 in the left side of the film of interferometric modulator 2010, the zone 2022 corresponding to the right side of the film of interferometric modulator 2010 can be blueness so, because it is farther apart from substrate.

Show a system in Figure 20 G, it can be used for fast and accurately assessing the residual stress state of a deposit film.Wafer 2030 comprises an array of interferometric modulator structure, and it is made up of the single-cantilever film with length variable and width and two cantilever membrane.Described structural membrane is made by the material of machinery and the better characterization of residual stress character.Many materials all are possible, and it stands the restriction of essential reflectivity, supposes that interferometric modulator is not used in the demonstration purpose in this case, so this must reflectivity can be quite low.Good candidate material will comprise the material (for example, silicon, aluminium, germanium) of crystal habit, and to make viewpoint be compatible or it is compatible to become from one for it, and it shows reflectivity to a certain degree, and has the engineering properties of the higher accuracy of being characterized as.Make and discharge these " test structures " and be freestanding.If material does not have stress, so described structure will not showed change color.Yet if not this situation, can write down color state or color map by using high resolution imaging apparatus 2034 so, described high resolution imaging apparatus 2034 can obtain the image of high power by optical system 2032.

Described imaging device is connected to a computer system 2036, stays on the described computer system 2036 and deposits the hardware that can write down with image data processing.Described hardware can comprise the high speed processing plate that can be easy to obtain so that calculate with the two-forty combine digital.Described software can be made up of to collect the distortion of colouring information and gauging surface collection procedure.Kernel program will use deformation data to decide the homogeneous state of stress on the thickness of film and the best of breed of stress gradient, and this can produce overall shape.

The set of " original " testing wafer of a kind of detail record that uses pattern to produce to have non-deposition stress state is put it for future use well.When needs determine the residual stress of a deposit film, select a testing wafer and described thin film deposition at its top.Deposit film has changed the geometric configuration of described structure, and therefore changes its color map.Utilization resides on the software in the described computer system, can compare before the testing wafer and color map afterwards, and carries out the residual stress accurate assessment in institute's deposit film.After deposition, also described test structure can be designed to excited target.Can provide about the more information of residual stress state and the change of property of thin film in many excitation cycle the observation of its operating condition during the excitation of film with recent deposit.

This technology also can be used for determining the membrane stress of film when deposition.By the described depositing system of suitable modification, can be made into the optical path that allows described imaging system Real Time Observation structure and follow the trail of its color map variation.This can attempt to control in this way residual stress with the feedback system that helps to be used in the control deposition parameter.Described software and hardware is " inquiry " testing wafer periodically, and allows the deposition tool operator to change condition when film growth.In general, this system is better than being used to measure the other technologies of residual stress, and these other technologies or the dynamo-electric excitation of dependence separately perhaps utilize distortion expensive and that structure is made in complicated interference system measurement.The former problem is to provide to the big array of device the inexactness of drive electronics and electronic surveying displacement.The latter's problem is the optical property of the film under observation and the complicacy of required external optical device and hardware.

Discontinuous film

Another kind of material with interesting character is the uneven film of structure.These films can several forms occur, and we should be referred to as it discontinuous film.Figure 21 A has illustrated a kind of discontinuous film of form.Substrate 2000 can be and makes profile 2104,2106 and 2108 be etched into its surperficial metal, dielectric or semiconductor.These profiles of discrete structure section that comprise the height 2110 of certain mark that should have relevant light wavelength use photoetching and chemical etch technique to be etched with and realize being similar to by 2104 (triangles), the illustrated section of 2106 (cylindrical) and 2108 (restrain Lou and divide this smooth (klopfenstein) taper).The effective diameter of the substrate 2102 of arbitrary indivedual sections also is about the height of described pattern.Though each profile is slightly different, its all shared enjoying from incident is crossed the characteristic that enters in the substrate, and effective refractive index gradually becomes the refractive index of film-substrate 2000 itself from the refractive index of incident medium.Such structure is as senior anti-reflection coating, because it compares the dependence of angle with as much with the structure of being made by film combinations.Therefore, its incident angle to wider range keeps higher antireflection.

Figure 21 B shows a coating 2120, and it has been deposited on the substrate 2122 and also can have been made by metal, dielectric or semiconductor.In this case, described film still is in the early stage of formation, and thickness is less than about 1000 dusts.During most depositing operations, film experience one is nucleation process gradually, forms long more big more material position and begins to be bonded together up to it, and form a continuous film to a certain extent.Figure 21 C shows the vertical view of film 2124.The optical property of the film in stage is different with the optical property of continuous film in early days.For metal, a discontinuous film tends to show higher loss than its continuous coordinator.

Figure 21 D has illustrated the 3rd form of discontinuous film.In this case, film 2130 has been deposited on that thickness is at least 1,000 dusts on the substrate 2132, make it can be thought continuous.The technology from combined method that use is similar to early stage description produces a pattern in " sub-wavelength " (having the diameter littler than relevant wavelength) hole 2134 in described material.In this case, polymkeric substance can be used as etched pattern is passed the light shield print in the material below, and can use the reactive ion etching technology to come the described hole of etching.Because described material is continuously but porous, so the early stage film that it can not image pattern 21B equally acts on.On the contrary, its optical property is not with etch thin film is not different, because incident radiation is experienced less loss and can be showed transmission peak value based on surface plasma.In addition, the refractive index that can handle the geometric configuration in described hole and incident angle and incident medium is controlled the spectral signature of institute's transmitted light.Figure 21 E shows the vertical view of porous membrane 2136.In the paper " Control of optical transmission throughmetals perforated with subwavelength holearrays " of Tae Jin Kim, these films have been described.Though its structure is regular, it is different from PBG.

All these discontinuous films of three types all are the candidates that is included in the interferometric modulator structure.That is, it can be used as one or more material film in the static state of interferometric modulator structure and/or moveable part.All show unique optical properties for all these three kinds, these optical properties can mainly rely on indivedual films but not have the structure of film combinations of variable thickness and the mode of geometric configuration is controlled.It can be used in combination with other electronics, optics and the mechanical organ of its interferometric modulator that can comprise.Under very simple situation, the optical property of each of these films can directly contact its and other films and closely changed near other films by surface conductive or optical interference.This can take place by the conduction of the described film of direct change and/or by the effective refractive index that changes its surrounding medium.Therefore available simpler construction with less complicated manufacturing process obtains the complicated optic response in individual interferometric modulator.

Visual display unit

Other embodiment of the present invention comprises visual display unit, and it comprises a plurality of interferometric devices with big array manufacturing to form pixel in a reflective display.Figure 23 A and Figure 23 B are the system construction drawing of an embodiment of explanation one display device 40.Display device 40 can be (for example) cellular mobile telephone.Yet the same components of display device 40 or its slight variations also can illustrate dissimilar display device, for example TV or portable electronic device.

Display device 40 comprises a shell 41, a display 30, an antenna 43, a loudspeaker 45, an input media 48 and a microphone 46.Shell 41 comprises injection moulding and vacuum forming usually by any the making in the known many kinds of manufacturing process of those skilled in the art.In addition, shell 41 can include but not limited to plastics, metal, glass, rubber and pottery or its combination by any the making in the many kinds of materials.In one embodiment, shell 41 comprises the moveable part (not shown) that can have different colours with other or contain the moveable part exchange of unlike signal, picture or symbol.

The display 30 of exemplary display device 40 can be any in the many kinds of displays, comprises bistable display as described herein.In other embodiments, know as the those skilled in the art, display 30 comprises a flat-panel monitor, for example, and aforesaid plasma, EL, OLED, STN LCD or TFT LCD; Or non-tablet display, for example CRT or other tube arrangements.But, as described herein, for the purpose of explanation present embodiment, display 30 comprises an interferometric modulator display.

The assembly that in Figure 23 B, schematically shows an embodiment of exemplary display device 40.Shown in exemplary display device 40 comprise a shell 41 and can comprise that other are at least partially enclosed within the assembly in the shell 41.For example, in one embodiment, exemplary display device 40 comprises a network interface 27, and network interface 27 comprises that one is coupled to the antenna 43 of a transceiver 47.Transceiver 47 is connected to and regulates the processor 21 that hardware 52 links to each other.Regulate hardware 52 and can be configured to regulate a signal (for example signal being carried out filtering).Regulate hardware 52 and be connected to a loudspeaker 44 and a microphone 46.Processor 21 also is connected to an input media 48 and a driving governor 29.Driving governor 29 is coupled to one frame buffer 28 and array driver 22, and array driver 22 is coupled to a display array 30 again.One power supply 50 provides power according to the designing requirement of this particular exemplary display device 40 to all component.

Network interface 27 comprises antenna 43 and transceiver 47, so that exemplary display device 40 can be communicated by letter with one or more device by network.In one embodiment, network interface 27 also can have some processing capacity, to reduce the requirement to processor 21.Antenna 43 is used to transmit and receive the antenna of signal for known any of those skilled in the art.In one embodiment, described antenna transmits and receives the RF signal according to IEEE802.11 standard (comprise IEEE802.11 (a) and (b) or (g)).In another embodiment, described antenna is according to bluetooth (BLUETOOTH) standard emission and reception RF signal.Under cellular situation, described antenna is designed to receive and is used for CDMA, the GSM, AMPS or other known signals that communicate in a wireless cellular telephone network network.The signal that transceiver 47 pre-service receive from antenna 43 is so that these signals can be received and further be handled by processor 21.Transceiver 47 is also handled the signal that self processor 21 receives, so that can be by antenna 43 from exemplary display device 40 these signals of emission.

In an alternate embodiment, transceiver 47 can be substituted by a receiver.In another alternate embodiment, network interface 27 can be substituted by the image source that can store or produce the view data to processor 21 to be sent.For example, this image source can be the software module that hard disk drive or that a digital video disk (DVD) or contains view data produces view data.

The overall operation of processor 21 common control example expressivity display device 40.Processor 21 automatic network interfaces 27 or an image source receive data, for example compressed view data, and described data processing become raw image data or a kind of form that is easy to be processed into raw image data.After this, the data after processor 21 will be handled send to driving governor 29 or frame buffer 28 is stored.Raw data is often referred to the information of the characteristics of image of each position in identification one image.For example, these characteristics of image can comprise color, saturation degree and gray level.

In one embodiment, processor 21 comprises a microprocessor, CPU or is used for the logical block of the operation of control example expressivity display device 40.Regulating hardware 52 generally includes and is used for transmitting and from the amplifier and the wave filter of microphone 46 received signals to loudspeaker 44.Adjusting hardware 52 can be the discrete component in the exemplary display device 40, perhaps can incorporate in processor 21 or other assemblies.

Driving governor 29 directly receives the raw image data that is produced by processor 21 from processor 21 or from frame buffer 28, and with described raw image data reformatting suitably, with high-speed transfer to array driver 22.Particularly, driving governor 29 is reformatted as one with raw image data and has the data stream of a grating class form, is applicable to the chronological order that scans whole display array 30 so that it has one.After this, the information after driving governor 29 will format is sent to array driver 22.Although a driving governor 29 (a for example lcd controller) usually as one independently integrated circuit (IC) be associated with system processor 21, these controllers can be implemented by multiple mode.It can be used as in the hardware embedded processor 21, as in the software embedded processor 21 or together fully-integrated with example, in hardware and array driver 22.

Usually, the self-driven controllers 29 of array driver 22 receive the information after the format and video data are reformatted as one group of parallel waveform, and the parallel waveform per second of this group many times is applied to from the hundreds of of the x-y picture element matrix of display and is thousands of lead-in wires sometimes.

In one embodiment, driving governor 29, array driver 22 and display array 30 are applicable to the display of any kind as herein described.For example, in one embodiment, driving governor 29 is a traditional display controller or a bistable state display controller (a for example interferometric modulator controller).In another embodiment, array driver 22 is a legacy drive or a bistable state display driver (a for example interferometric modulator display).In one embodiment, a driving governor 29 integrates with array driver 22.This embodiment is very common in the integrated system of for example cellular phone, table and other small-area display equal altitudes.In another embodiment, display array 30 is a typical display array or a bistable state display array (a for example display that comprises an interferometric modulator array).

Input media 48 allows the operation of user's energy control example expressivity display device 40.In one embodiment, input media 48 comprises a keypad (for example qwerty keyboard or telephone keypad), a button, a switch, a touch sensitive screen, a pressure-sensitive or thermosensitive film.In one embodiment, microphone 46 is input medias of exemplary display device 40.When using microphone 46, can provide voice command to come the operation of control example expressivity display device 40 by the user to these device input data.

Well-known various energy storing devices in the field under power supply 50 can comprise.For example, in one embodiment, power supply 50 is a rechargeable accumulator, for example nickel-cadmium accumulator or lithium-ions battery.In another embodiment, power supply 50 is a regenerative resource, capacitor or solar cell, comprises plastic solar cell and solar cell coating.In another embodiment, power supply 50 is configured to receive electric power from wall plug.

As indicated above, in certain embodiments, the control programmability resides in the driving governor, and this driving governor can be arranged on several positions of electronic display system.In some cases, the control programmability resides in the array driver 22.Be understood by those skilled in the art that hardware and/or component software that can any amount be implemented above-mentioned optimization with different configurations.

Other embodiment are in the category of following claims.

Claims (41)

1. optical devices, it comprises:

One opaque substrate;

One first optical layers, its transmission and reflect incident light at least in part at least in part; With

One second optical layers, it reflects incident light at least in part, described second optical layers and described first optical layers are spaced apart, in wherein said first optical layers and described second optical layers at least one can move the reflectivity of the mobile modulation described device of at least one in wherein said first optical layers and described second optical layers between the described primary importance and the described second place between the second place that has a second distance between described first optical layers and described second optical layers in the primary importance that has one first distance between described first optical layers and described second optical layers and one.

2. device according to claim 1, wherein said first optical layers and described substrate are spaced apart, described second optical layers is between described substrate and described first optical layers, and described second optical layers can move between the described primary importance and the described second place.

3. device according to claim 1, wherein said substrate comprise described second optical layers, and described first optical layers can move between the described primary importance and the described second place.

4. device according to claim 1, wherein said substrate comprises a metal.

5. device according to claim 4, wherein said substrate comprises steel.

6. device according to claim 4, wherein said substrate comprises aluminium.

7. device according to claim 4, wherein said substrate comprises a metal forming.

8. device according to claim 1, wherein said substrate comprises a plastic material.

9. device according to claim 1, wherein said substrate is flexible.

10. device according to claim 1, wherein said substrate comprises a stupalith.

11. device according to claim 1, wherein said substrate comprises silicon.

12. device according to claim 11, wherein said substrate comprises circuit, and the opacity of wherein said substrate is enough to cover described circuit and is not subjected to illumination.

13. device according to claim 12, wherein said circuit comprises the control circuit that is used for described device.

14. device according to claim 1, it further comprises a light source, and the reflectivity of wherein said substrate is enough to reduce the loss of passing described substrate from the light of described light source.

15. device according to claim 1, wherein said substrate comprises a printed circuit board (PCB).

16. device according to claim 1, wherein said substrate comprises a conductive layer.

17. device according to claim 16, wherein said second optical layers moves between the described primary importance and the described second place in response to the voltage that imposes on described conductive layer.

18. device according to claim 16, wherein said first optical layers moves between the described primary importance and the described second place in response to the voltage that imposes on described conductive layer.

19. device according to claim 16, it further comprises the conductive trace that is electrically coupled to described conductive layer, the optical appearance coupling of wherein said substrate and described conductive trace.

20. device according to claim 1, wherein said device have the dark state that has a color, and described substrate and described color-match.

21. device according to claim 1, wherein said device have a dark state, right and wrong are reflexive substantially installing described in the described dark state, and described substrate right and wrong are reflexive substantially.

22. device according to claim 1, wherein said substrate comprise the dielectric layer of a conductive layer and on described conductive layer, and in wherein said conductive layer and the described dielectric layer at least one is opaque.

23. device according to claim 1, wherein said substrate thickness is between about 0.1 millimeter and about 1.0 millimeters.

24. device according to claim 1, it further comprises:

One processor, itself and described substrate electric connection, described processor is configured to image data processing; With

One memory storage, itself and described processor electric connection.

25. device according to claim 24, it further comprises one and is configured to be sent to the driving circuit of a few signal to described substrate.

26. device according to claim 25, it further comprises one and is configured to send the controller of at least a portion of described view data to described driving circuit.

27. device according to claim 24, it further comprises one and is configured to send the image source module of described view data to described processor.

28. device according to claim 26, wherein said image source module comprises at least one in a receiver, transceiver and the transmitter.

29. device according to claim 24, it further comprises an input media that is configured to receive the input data and described input data transfer is arrived described processor.

30. optical devices, it comprises:

Be used for catoptrical first member, the transmission and reflect incident light at least in part at least in part of described first reflecting member;

Be used for catoptrical second member, described second reflecting member reflects incident light at least in part, described second reflecting member and described first reflecting member are spaced apart, in wherein said first reflecting member and described second reflecting member at least one can move the reflectivity of the mobile modulation described device of at least one in wherein said first reflecting member and described second reflecting member between the described primary importance and the described second place between the second place that has a second distance between described first reflecting member and described second reflecting member in the primary importance that has one first distance between described first reflecting member and described second reflecting member and one; With

Be used for supporting at least one member of described first reflecting member and described second reflecting member, described supporting member is opaque.

31. device according to claim 30, wherein said supporting member comprises a substrate.

32. device according to claim 30, wherein said first reflecting member comprises an optical layers.

33. device according to claim 30, wherein said second reflecting member comprises an optical layers.

34. a method of making optical devices, it comprises:

One opaque substrate is provided; With

Form one or more layer on described opaque substrate, described one or more layer comprises:

One first optical layers, its transmission and reflect incident light at least in part at least in part; With

One second optical layers, it reflects incident light at least in part, described second optical layers and described first optical layers are spaced apart, in wherein said first optical layers and described second optical layers at least one can move the reflectivity of the mobile modulation described device of at least one in wherein said first optical layers and described second optical layers between the described primary importance and the described second place between the second place that has a second distance between described first optical layers and described second optical layers in the primary importance that has one first distance between described first optical layers and described second optical layers and one.

35. method according to claim 34, wherein said substrate comprises metal forming.

36. method according to claim 34, wherein said substrate comprises plastics.

37. method according to claim 34, wherein said substrate comprises silicon.

38. method according to claim 34 wherein forms described one or more layer and comprise photoetching, and described substrate does not see through the light that uses substantially during described photoetching.

39. method according to claim 34 wherein forms described one or more layer and comprises the use semiconductor processing equipment.

40. optical devices, it forms by the described method of claim 34.

41. the method for a light modulated, described method comprises:

One optical devices are provided, and described optical devices comprise:

One opaque substrate;

One first optical layers, its transmission and reflect incident light at least in part at least in part; With

One second optical layers, it reflects incident light at least in part, described second optical layers and described first optical layers are spaced apart, and at least one in wherein said first optical layers and described second optical layers can move between the second place that has a second distance between described first optical layers and described second optical layers in the primary importance that has one first distance between described first optical layers and described second optical layers and one; With

In described device, move with rayed in described first optical layers and described second optical layers described at least one.

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