CN1764863A - 高速硅基电光调制器 - Google Patents
高速硅基电光调制器 Download PDFInfo
- Publication number
- CN1764863A CN1764863A CN200480007925.3A CN200480007925A CN1764863A CN 1764863 A CN1764863 A CN 1764863A CN 200480007925 A CN200480007925 A CN 200480007925A CN 1764863 A CN1764863 A CN 1764863A
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- CN
- China
- Prior art keywords
- optical device
- silica
- silicon
- based electro
- electro
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Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 213
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 203
- 239000010703 silicon Substances 0.000 title claims abstract description 202
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 240
- 239000000377 silicon dioxide Substances 0.000 claims description 120
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 58
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- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 3
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- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
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- 229910021341 titanium silicide Inorganic materials 0.000 claims 5
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims 4
- 230000001186 cumulative effect Effects 0.000 claims 4
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
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- 229910052750 molybdenum Inorganic materials 0.000 description 2
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- 239000010937 tungsten Substances 0.000 description 2
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- 230000005374 Kerr effect Effects 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
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- 238000006555 catalytic reaction Methods 0.000 description 1
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- JUTRBLIIVLVGES-UHFFFAOYSA-N cobalt tantalum Chemical compound [Co].[Ta] JUTRBLIIVLVGES-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
- G02F1/2257—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure the optical waveguides being made of semiconducting material
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12159—Interferometer
Abstract
Description
Claims (134)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US45724203P | 2003-03-25 | 2003-03-25 | |
US60/457,242 | 2003-03-25 | ||
US10/795,748 | 2004-03-08 | ||
US10/795,748 US6845198B2 (en) | 2003-03-25 | 2004-03-08 | High-speed silicon-based electro-optic modulator |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1764863A true CN1764863A (zh) | 2006-04-26 |
CN100359367C CN100359367C (zh) | 2008-01-02 |
Family
ID=33135050
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800079253A Expired - Lifetime CN100359367C (zh) | 2003-03-25 | 2004-03-23 | 高速硅基电光调制器 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6845198B2 (zh) |
EP (1) | EP1613991B1 (zh) |
JP (1) | JP4820649B2 (zh) |
KR (1) | KR100808305B1 (zh) |
CN (1) | CN100359367C (zh) |
CA (1) | CA2519672C (zh) |
WO (1) | WO2004088394A2 (zh) |
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101458402B (zh) * | 2007-12-12 | 2010-06-02 | 中国科学院半导体研究所 | Soi衬底cmos工艺电光调制器 |
CN101661137B (zh) * | 2008-08-27 | 2010-12-22 | 中国科学院半导体研究所 | 制作用于1.55微米通信波段硅波导光电转换器的方法 |
CN102033332A (zh) * | 2009-09-25 | 2011-04-27 | 英特尔公司 | 利用晶片键合技术的光调制器 |
CN102200651A (zh) * | 2010-03-26 | 2011-09-28 | 三菱电机株式会社 | 光调制器和其制造方法 |
CN101622570B (zh) * | 2007-03-01 | 2012-07-18 | 朗讯科技公司 | 高速半导体光调制器 |
CN101467083B (zh) * | 2006-06-15 | 2012-10-10 | 斯欧普迪克尔股份有限公司 | 硅调制器偏移调谐装置 |
CN103226252A (zh) * | 2013-05-06 | 2013-07-31 | 中国科学院半导体研究所 | 一种提高耗尽型硅基电光调制器调制效率的掺杂结构 |
CN103907049A (zh) * | 2011-10-26 | 2014-07-02 | 株式会社藤仓 | 光学元件以及马赫-曾德型光波导元件 |
CN104393133A (zh) * | 2014-12-05 | 2015-03-04 | 武汉邮电科学研究院 | 一种提高硅基电光调谐器件的效率和带宽的掺杂结构 |
CN105487263A (zh) * | 2014-06-30 | 2016-04-13 | 硅光电科技股份有限公司 | 硅基脊型波导调制器及其制造方法 |
CN105511119A (zh) * | 2016-01-15 | 2016-04-20 | 北京大学 | 硅基电光调制器掺杂结构 |
CN105629519A (zh) * | 2014-11-06 | 2016-06-01 | 江苏尚飞光电科技有限公司 | 硅基光调制器 |
CN105629522A (zh) * | 2014-11-06 | 2016-06-01 | 江苏尚飞光电科技有限公司 | 硅基光调制器 |
CN106291990A (zh) * | 2016-08-29 | 2017-01-04 | 上海交通大学 | 硅基注氧电容型电光调制器 |
WO2017149369A1 (en) * | 2016-03-04 | 2017-09-08 | The Governing Council Of The University Of Toronto | System and method for manufacturing a semiconductor junction |
CN107290873A (zh) * | 2016-04-01 | 2017-10-24 | 源杰科技股份有限公司 | 光调变器 |
CN107430292A (zh) * | 2015-03-12 | 2017-12-01 | 国际商业机器公司 | 电光和热光调制器 |
CN108474973A (zh) * | 2015-11-12 | 2018-08-31 | 洛克利光子有限公司 | 光电子部件 |
CN110121673A (zh) * | 2016-12-30 | 2019-08-13 | 华为技术有限公司 | 基于载流子效应的光开关 |
US10775650B2 (en) | 2016-08-29 | 2020-09-15 | Nippon Telegraph And Telephone Corporation | Optical modulator |
CN113629129A (zh) * | 2020-05-07 | 2021-11-09 | 华为技术有限公司 | Pn结及调制器 |
TWI751803B (zh) * | 2019-12-23 | 2022-01-01 | 美商格芯(美國)集成電路科技有限公司 | 具有混合錐型波導段及超材料段的光纖耦合器 |
US11728283B2 (en) | 2020-08-10 | 2023-08-15 | Samsung Electronics Co., Ltd. | Package substrate and semiconductor package including the same |
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AU2002356843A1 (en) * | 2001-10-22 | 2003-05-06 | Massachusetts Institute Of Technology | Light modulation using the franz-keldysh effect |
US6884327B2 (en) * | 2002-03-16 | 2005-04-26 | Tao Pan | Mode size converter for a planar waveguide |
US7378356B2 (en) * | 2002-03-16 | 2008-05-27 | Springworks, Llc | Biased pulse DC reactive sputtering of oxide films |
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US8728285B2 (en) | 2003-05-23 | 2014-05-20 | Demaray, Llc | Transparent conductive oxides |
US6954558B2 (en) * | 2003-06-24 | 2005-10-11 | Intel Corporation | Method and apparatus for phase shifting an optical beam in an optical device |
US7085443B1 (en) * | 2003-08-15 | 2006-08-01 | Luxtera, Inc. | Doping profiles in PN diode optical modulators |
US20050084195A1 (en) * | 2003-10-15 | 2005-04-21 | Hamann Hendrik F. | Method and apparatus for forming lateral electrical contacts for photonic crystal devices |
US7672558B2 (en) * | 2004-01-12 | 2010-03-02 | Honeywell International, Inc. | Silicon optical device |
US7298949B2 (en) * | 2004-02-12 | 2007-11-20 | Sioptical, Inc. | SOI-based photonic bandgap devices |
CN101142505B (zh) * | 2004-02-26 | 2010-05-05 | 斯欧普迪克尔股份有限公司 | 绝缘体上硅(soi)结构中的光的主动操控装置 |
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US7177489B2 (en) * | 2004-03-18 | 2007-02-13 | Honeywell International, Inc. | Silicon-insulator-silicon thin-film structures for optical modulators and methods of manufacture |
US7149388B2 (en) * | 2004-03-18 | 2006-12-12 | Honeywell International, Inc. | Low loss contact structures for silicon based optical modulators and methods of manufacture |
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US20050230763A1 (en) * | 2004-04-15 | 2005-10-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a microelectronic device with electrode perturbing sill |
US20060024067A1 (en) * | 2004-07-28 | 2006-02-02 | Koontz Elisabeth M | Optical I/O chip for use with distinct electronic chip |
US20060063679A1 (en) * | 2004-09-17 | 2006-03-23 | Honeywell International Inc. | Semiconductor-insulator-semiconductor structure for high speed applications |
US8636876B2 (en) | 2004-12-08 | 2014-01-28 | R. Ernest Demaray | Deposition of LiCoO2 |
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CA2519672A1 (en) | 2004-10-14 |
EP1613991A4 (en) | 2009-10-28 |
EP1613991B1 (en) | 2013-07-24 |
CN100359367C (zh) | 2008-01-02 |
US6845198B2 (en) | 2005-01-18 |
JP4820649B2 (ja) | 2011-11-24 |
KR100808305B1 (ko) | 2008-02-27 |
US20040208454A1 (en) | 2004-10-21 |
CA2519672C (en) | 2012-11-13 |
JP2006515082A (ja) | 2006-05-18 |
WO2004088394A2 (en) | 2004-10-14 |
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EP1613991A2 (en) | 2006-01-11 |
KR20050114696A (ko) | 2005-12-06 |
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