CN1794014A - 多层材料及其制备方法 - Google Patents
多层材料及其制备方法 Download PDFInfo
- Publication number
- CN1794014A CN1794014A CNA2005101361262A CN200510136126A CN1794014A CN 1794014 A CN1794014 A CN 1794014A CN A2005101361262 A CNA2005101361262 A CN A2005101361262A CN 200510136126 A CN200510136126 A CN 200510136126A CN 1794014 A CN1794014 A CN 1794014A
- Authority
- CN
- China
- Prior art keywords
- layer
- materials
- precursor
- thickness
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 185
- 238000000034 method Methods 0.000 title claims description 54
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 68
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000002243 precursor Substances 0.000 claims description 37
- 238000000151 deposition Methods 0.000 claims description 34
- 239000004408 titanium dioxide Substances 0.000 claims description 29
- 230000004087 circulation Effects 0.000 claims description 25
- 230000008021 deposition Effects 0.000 claims description 20
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 18
- 239000000126 substance Substances 0.000 claims description 17
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 12
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims description 10
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 10
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 10
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 7
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 7
- 241000588731 Hafnia Species 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- 230000006835 compression Effects 0.000 claims description 5
- 238000007906 compression Methods 0.000 claims description 5
- 229910000311 lanthanide oxide Inorganic materials 0.000 claims description 4
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 4
- 239000005083 Zinc sulfide Substances 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- ZZHNUBIHHLQNHX-UHFFFAOYSA-N butoxysilane Chemical class CCCCO[SiH3] ZZHNUBIHHLQNHX-UHFFFAOYSA-N 0.000 claims description 2
- NHSBNIBUVXTUML-UHFFFAOYSA-N hydroxy-[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[SiH2]O NHSBNIBUVXTUML-UHFFFAOYSA-N 0.000 claims description 2
- 210000001161 mammalian embryo Anatomy 0.000 claims description 2
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 claims description 2
- -1 monox Inorganic materials 0.000 claims 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 1
- NCCPPOZTBYQIPS-UHFFFAOYSA-N butoxy(hydroxy)silane Chemical class CCCCO[SiH2]O NCCPPOZTBYQIPS-UHFFFAOYSA-N 0.000 claims 1
- JVOQKOIQWNPOMI-UHFFFAOYSA-N ethanol;tantalum Chemical compound [Ta].CCO JVOQKOIQWNPOMI-UHFFFAOYSA-N 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 53
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 abstract description 30
- 238000000576 coating method Methods 0.000 abstract description 15
- 230000004888 barrier function Effects 0.000 abstract description 12
- 239000010408 film Substances 0.000 description 87
- 239000010410 layer Substances 0.000 description 80
- 238000006243 chemical reaction Methods 0.000 description 28
- 239000010936 titanium Substances 0.000 description 26
- 239000013078 crystal Substances 0.000 description 19
- 229910052719 titanium Inorganic materials 0.000 description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 16
- 230000003647 oxidation Effects 0.000 description 15
- 238000007254 oxidation reaction Methods 0.000 description 15
- 239000011521 glass Substances 0.000 description 14
- 229910010413 TiO 2 Inorganic materials 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 238000002441 X-ray diffraction Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 230000002349 favourable effect Effects 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 238000010926 purge Methods 0.000 description 6
- 230000000452 restraining effect Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000003877 atomic layer epitaxy Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 238000010923 batch production Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- AENDPCOLKHDBIA-UHFFFAOYSA-N oxidoaluminium(1+) Chemical compound [Al+]=O AENDPCOLKHDBIA-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000012686 silicon precursor Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- LJWMXWPHTQLTNI-UHFFFAOYSA-N CCN(C)[Ti] Chemical compound CCN(C)[Ti] LJWMXWPHTQLTNI-UHFFFAOYSA-N 0.000 description 1
- PWVDYRRUAODGNC-UHFFFAOYSA-N CCN([Ti])CC Chemical compound CCN([Ti])CC PWVDYRRUAODGNC-UHFFFAOYSA-N 0.000 description 1
- ZLOKVAIRQVQRGC-UHFFFAOYSA-N CN(C)[Ti] Chemical compound CN(C)[Ti] ZLOKVAIRQVQRGC-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- LCKIEQZJEYYRIY-UHFFFAOYSA-N Titanium ion Chemical compound [Ti+4] LCKIEQZJEYYRIY-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033558 biomineral tissue development Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000005829 chemical entities Chemical class 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- UBZYKBZMAMTNKW-UHFFFAOYSA-J titanium tetrabromide Chemical compound Br[Ti](Br)(Br)Br UBZYKBZMAMTNKW-UHFFFAOYSA-J 0.000 description 1
- NLLZTRMHNHVXJJ-UHFFFAOYSA-J titanium tetraiodide Chemical compound I[Ti](I)(I)I NLLZTRMHNHVXJJ-UHFFFAOYSA-J 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3694—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer having a composition gradient through its thickness
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/90—Other aspects of coatings
- C03C2217/91—Coatings containing at least one layer having a composition gradient through its thickness
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
Abstract
Description
Claims (53)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20045495A FI117728B (fi) | 2004-12-21 | 2004-12-21 | Monikerrosmateriaali ja menetelmä sen valmistamiseksi |
FI20045495 | 2004-12-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1794014A true CN1794014A (zh) | 2006-06-28 |
CN100526915C CN100526915C (zh) | 2009-08-12 |
Family
ID=33548091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005101361262A Active CN100526915C (zh) | 2004-12-21 | 2005-12-21 | 多层材料及其制备方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7901736B2 (zh) |
EP (1) | EP1674890B1 (zh) |
CN (1) | CN100526915C (zh) |
FI (1) | FI117728B (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102484160A (zh) * | 2009-08-24 | 2012-05-30 | 纳幕尔杜邦公司 | 用于薄膜光伏电池的阻挡膜 |
CN102575345A (zh) * | 2009-09-14 | 2012-07-11 | 贝尼科公司 | 多层涂层、制作多层涂层的方法及其应用 |
CN102666914A (zh) * | 2009-11-06 | 2012-09-12 | 贝尼科公司 | 形成导电性氧化物膜的方法、导电性氧化物膜及其应用 |
CN102703880A (zh) * | 2012-06-12 | 2012-10-03 | 浙江大学 | 利用原子层沉积制备高精度光学宽带抗反射多层膜的方法 |
CN101809191B (zh) * | 2007-09-26 | 2012-10-31 | 伊斯曼柯达公司 | 通过大气压力下的原子层沉积(ald)制造光学膜的方法 |
CN102892921A (zh) * | 2010-05-10 | 2013-01-23 | 贝尼科公司 | 生成沉积物的方法和硅基底表面上的沉积物 |
CN103804963A (zh) * | 2012-11-14 | 2014-05-21 | 上海纳米技术及应用国家工程研究中心有限公司 | 一种具备较高饱和度的光学干涉变色颜料的制备方法 |
CN107405872A (zh) * | 2015-03-17 | 2017-11-28 | 凸版印刷株式会社 | 层叠体及其制造方法、以及阻气膜及其制造方法 |
CN112526663A (zh) * | 2020-11-04 | 2021-03-19 | 浙江大学 | 一种基于原子层沉积的吸收膜及其制作方法 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100867520B1 (ko) * | 2007-04-23 | 2008-11-07 | 삼성전기주식회사 | 결상 렌즈 및 그 제조 방법 |
GB0718841D0 (en) * | 2007-09-26 | 2007-11-07 | Eastman Kodak Co | Method of making a colour filter array |
FI120832B (fi) * | 2007-12-03 | 2010-03-31 | Beneq Oy | Menetelmä ohuen lasin lujuuden kasvattamiseksi |
US9279120B2 (en) * | 2008-05-14 | 2016-03-08 | The Regents Of The University Of Colorado, A Body Corporate | Implantable devices having ceramic coating applied via an atomic layer deposition method |
WO2010044922A1 (en) | 2008-06-12 | 2010-04-22 | Anguel Nikolov | Thin film and optical interference filter incorporating high-index titanium dioxide and method for making them |
US7888195B2 (en) * | 2008-08-26 | 2011-02-15 | United Microelectronics Corp. | Metal gate transistor and method for fabricating the same |
DE102010010937A1 (de) | 2009-10-26 | 2011-04-28 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Verfahren und Vorrichtung zur Herstellung einer Fresnel-Zonenplatte |
FI20096153A0 (fi) * | 2009-11-06 | 2009-11-06 | Beneq Oy | Menetelmä koristepäällysteen muodostamiseksi, koristepäällyste ja sen käyttötapoja |
FI20096262A0 (fi) * | 2009-11-30 | 2009-11-30 | Beneq Oy | Menetelmä koristepinnoitteen muodostamiseksi jalokiveen, jalokiven koristepinnoite, ja sen käytöt |
US8564095B2 (en) | 2011-02-07 | 2013-10-22 | Micron Technology, Inc. | Capacitors including a rutile titanium dioxide material and semiconductor devices incorporating same |
US8609553B2 (en) | 2011-02-07 | 2013-12-17 | Micron Technology, Inc. | Methods of forming rutile titanium dioxide and associated methods of forming semiconductor structures |
EP2823489A2 (en) * | 2012-03-08 | 2015-01-14 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften | Method of producing a fresnel zone plate for applications in high energy radiation |
TW201615882A (zh) * | 2014-10-23 | 2016-05-01 | 國立臺灣大學 | 氧化鈦薄膜以及包含其之複合薄膜之製備方法 |
JP5906507B1 (ja) * | 2015-02-27 | 2016-04-20 | 株式会社昭和真空 | 多層膜被覆樹脂基板およびその製造方法 |
MX2017016241A (es) * | 2015-07-30 | 2018-04-20 | Halliburton Energy Services Inc | Elementos informaticos integrados que incorporan una capa de liberacion de tension. |
US20170178899A1 (en) * | 2015-12-18 | 2017-06-22 | Lam Research Corporation | Directional deposition on patterned structures |
US11320568B2 (en) | 2018-05-11 | 2022-05-03 | Corning Incorporated | Curved surface films and methods of manufacturing the same |
CN110767668B (zh) | 2019-12-30 | 2020-03-27 | 杭州美迪凯光电科技股份有限公司 | 含纳米级表面的clcc封装体盖板、封装体和摄像模组 |
US11542597B2 (en) | 2020-04-08 | 2023-01-03 | Applied Materials, Inc. | Selective deposition of metal oxide by pulsed chemical vapor deposition |
FI130280B (fi) * | 2021-03-19 | 2023-05-31 | Beneq Oy | Menetelmä ja käyttö kalvoon liittyen ja kalvo |
CN115086845B (zh) * | 2022-08-19 | 2022-12-20 | 江苏光微半导体有限公司 | 一种高灵敏度的mems光纤麦克风传感器 |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3432225A (en) | 1964-05-04 | 1969-03-11 | Optical Coating Laboratory Inc | Antireflection coating and assembly having synthesized layer of index of refraction |
US3675619A (en) * | 1969-02-25 | 1972-07-11 | Monsanto Co | Apparatus for production of epitaxial films |
US4010710A (en) * | 1974-09-20 | 1977-03-08 | Rockwell International Corporation | Apparatus for coating substrates |
US4235650A (en) * | 1978-09-05 | 1980-11-25 | General Electric Company | Open tube aluminum diffusion |
FI64878C (fi) * | 1982-05-10 | 1984-01-10 | Lohja Ab Oy | Kombinationsfilm foer isynnerhet tunnfilmelektroluminensstrukturer |
FI84960C (fi) | 1990-07-18 | 1992-02-10 | Planar Int Oy | Lysaemnesskikt foer elektroluminescensdisplay. |
FR2670199B1 (fr) * | 1990-12-06 | 1993-01-29 | Saint Gobain Vitrage Int | Procede de formation d'une couche a base d'oxyde d'aluminium sur du verre, produit obtenu et son utilisation dans des vitrages a couche conductrice. |
US5508091A (en) | 1992-12-04 | 1996-04-16 | Photran Corporation | Transparent electrodes for liquid cells and liquid crystal displays |
DE4407909C3 (de) * | 1994-03-09 | 2003-05-15 | Unaxis Deutschland Holding | Verfahren und Vorrichtung zum kontinuierlichen oder quasi-kontinuierlichen Beschichten von Brillengläsern |
WO1995034916A1 (fr) * | 1994-06-15 | 1995-12-21 | Seiko Epson Corporation | Fabrication d'un equipement a semi-conducteurs a couches minces, equipement a semi-conducteurs a couches minces, afficheur a cristaux liquides et equipement electronique |
EP0852266B1 (en) * | 1995-08-23 | 2004-10-13 | Asahi Glass Ceramics Co., Ltd. | Target, process for production thereof, and method of forming highly refractive film |
US5719891A (en) * | 1995-12-18 | 1998-02-17 | Picolight Incorporated | Conductive element with lateral oxidation barrier |
JP4076028B2 (ja) * | 1997-02-18 | 2008-04-16 | 大日本印刷株式会社 | 偏光分離フィルム、バックライト及び液晶表示装置 |
US6266193B1 (en) | 1997-07-24 | 2001-07-24 | Cpfilms Inc. | Anti-reflective composite |
DE19809409A1 (de) | 1998-03-05 | 1999-09-09 | Leybold Systems Gmbh | Messingfarbige Beschichtung mit einer farbgebenden nitridischen Schicht |
JP3735461B2 (ja) * | 1998-03-27 | 2006-01-18 | 株式会社シンクロン | 複合金属の化合物薄膜形成方法及びその薄膜形成装置 |
FI108355B (fi) | 1998-07-28 | 2002-01-15 | Planar Systems Oy | Nõyt÷n ohutkalvorakenteen eristekalvo sekõ ohutkalvo-elektroluminesessi-nõytt÷laite |
US6165598A (en) | 1998-08-14 | 2000-12-26 | Libbey-Owens-Ford Co. | Color suppressed anti-reflective glass |
JP2000171607A (ja) | 1998-12-02 | 2000-06-23 | Canon Inc | 高緻密な多層薄膜およびその成膜方法 |
US6576053B1 (en) * | 1999-10-06 | 2003-06-10 | Samsung Electronics Co., Ltd. | Method of forming thin film using atomic layer deposition method |
KR100363084B1 (ko) * | 1999-10-19 | 2002-11-30 | 삼성전자 주식회사 | 박막 구조를 위한 다중막을 포함하는 커패시터 및 그 제조 방법 |
US6780704B1 (en) * | 1999-12-03 | 2004-08-24 | Asm International Nv | Conformal thin films over textured capacitor electrodes |
FI118474B (fi) * | 1999-12-28 | 2007-11-30 | Asm Int | Laite ohutkalvojen valmistamiseksi |
AU756842B2 (en) | 2000-08-29 | 2003-01-23 | Hoya Corporation | Optical element having antireflection film |
FR2814094B1 (fr) | 2000-09-20 | 2003-08-15 | Saint Gobain | Substrat a revetement photocatalytique et son procede de fabrication |
US6660660B2 (en) * | 2000-10-10 | 2003-12-09 | Asm International, Nv. | Methods for making a dielectric stack in an integrated circuit |
EP1229356A3 (en) | 2001-01-31 | 2004-01-21 | Planar Systems, Inc. | Methods and apparatus for the production of optical filters |
JP4427254B2 (ja) * | 2001-03-20 | 2010-03-03 | マットソン テクノロジイ インコーポレイテッド | 誘電体皮膜を堆積するための方法 |
US20020160194A1 (en) * | 2001-04-27 | 2002-10-31 | Flex Products, Inc. | Multi-layered magnetic pigments and foils |
DE10316671A1 (de) * | 2002-07-12 | 2004-01-22 | Röhm GmbH & Co. KG | Verfahren zur Herstellung transparenter Kunststoffe für optische Materialien |
AU2003270193A1 (en) * | 2002-09-14 | 2004-04-08 | Schott Ag | Layer system comprising a titanium-aluminium-oxide layer |
JP2004176081A (ja) * | 2002-11-25 | 2004-06-24 | Matsushita Electric Works Ltd | 原子層堆積法による光学多層膜の製造方法 |
US6890656B2 (en) * | 2002-12-20 | 2005-05-10 | General Electric Company | High rate deposition of titanium dioxide |
US7294360B2 (en) * | 2003-03-31 | 2007-11-13 | Planar Systems, Inc. | Conformal coatings for micro-optical elements, and method for making the same |
US7142375B2 (en) * | 2004-02-12 | 2006-11-28 | Nanoopto Corporation | Films for optical use and methods of making such films |
-
2004
- 2004-12-21 FI FI20045495A patent/FI117728B/fi active IP Right Grant
-
2005
- 2005-12-16 EP EP05397024.0A patent/EP1674890B1/en active Active
- 2005-12-19 US US11/305,024 patent/US7901736B2/en active Active
- 2005-12-21 CN CNB2005101361262A patent/CN100526915C/zh active Active
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102433549B (zh) * | 2007-09-26 | 2014-03-12 | 伊斯曼柯达公司 | 通过大气压力下的原子层沉积(ald)制造光学膜的方法 |
CN101809191B (zh) * | 2007-09-26 | 2012-10-31 | 伊斯曼柯达公司 | 通过大气压力下的原子层沉积(ald)制造光学膜的方法 |
CN102484160A (zh) * | 2009-08-24 | 2012-05-30 | 纳幕尔杜邦公司 | 用于薄膜光伏电池的阻挡膜 |
CN102575345A (zh) * | 2009-09-14 | 2012-07-11 | 贝尼科公司 | 多层涂层、制作多层涂层的方法及其应用 |
TWI507559B (zh) * | 2009-09-14 | 2015-11-11 | Beneq Oy | 多層被覆層、其製法及用途 |
CN102575345B (zh) * | 2009-09-14 | 2014-11-05 | 贝尼科公司 | 多层涂层、制作多层涂层的方法及其应用 |
CN102666914B (zh) * | 2009-11-06 | 2015-11-25 | 贝尼科公司 | 形成导电性氧化物膜的方法、导电性氧化物膜及其应用 |
CN102666914A (zh) * | 2009-11-06 | 2012-09-12 | 贝尼科公司 | 形成导电性氧化物膜的方法、导电性氧化物膜及其应用 |
TWI554635B (zh) * | 2009-11-06 | 2016-10-21 | 貝尼克公司 | 形成導電性氧化膜的方法、導電性氧化膜及其用途 |
CN102892921A (zh) * | 2010-05-10 | 2013-01-23 | 贝尼科公司 | 生成沉积物的方法和硅基底表面上的沉积物 |
CN102703880B (zh) * | 2012-06-12 | 2014-01-15 | 浙江大学 | 利用原子层沉积制备高精度光学宽带抗反射多层膜的方法 |
CN102703880A (zh) * | 2012-06-12 | 2012-10-03 | 浙江大学 | 利用原子层沉积制备高精度光学宽带抗反射多层膜的方法 |
CN103804963A (zh) * | 2012-11-14 | 2014-05-21 | 上海纳米技术及应用国家工程研究中心有限公司 | 一种具备较高饱和度的光学干涉变色颜料的制备方法 |
CN103804963B (zh) * | 2012-11-14 | 2015-09-09 | 上海纳米技术及应用国家工程研究中心有限公司 | 一种具备较高饱和度的光学干涉变色颜料的制备方法 |
CN107405872A (zh) * | 2015-03-17 | 2017-11-28 | 凸版印刷株式会社 | 层叠体及其制造方法、以及阻气膜及其制造方法 |
CN107405872B (zh) * | 2015-03-17 | 2020-07-24 | 凸版印刷株式会社 | 层叠体及其制造方法、以及阻气膜及其制造方法 |
CN112526663A (zh) * | 2020-11-04 | 2021-03-19 | 浙江大学 | 一种基于原子层沉积的吸收膜及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
FI20045495A0 (fi) | 2004-12-21 |
EP1674890A3 (en) | 2010-06-09 |
US7901736B2 (en) | 2011-03-08 |
FI20045495A (fi) | 2006-06-22 |
CN100526915C (zh) | 2009-08-12 |
FI117728B (fi) | 2007-01-31 |
EP1674890A2 (en) | 2006-06-28 |
EP1674890B1 (en) | 2018-05-30 |
US20060134433A1 (en) | 2006-06-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1794014A (zh) | 多层材料及其制备方法 | |
Jolivet et al. | Structural, optical, and electrical properties of TiO2 thin films deposited by ALD: Impact of the substrate, the deposited thickness and the deposition temperature | |
JP4057184B2 (ja) | 原子層蒸着法を用いた薄膜製造方法 | |
KR101970832B1 (ko) | 강유전체 박막의 제조 방법 | |
TWI616331B (zh) | 阻氣性薄膜 | |
WO2012121677A1 (en) | Method for depositing gradient films on a substrate surface by atomic layer deposition | |
US20100255217A1 (en) | Method for forming a capacitor dielectric and method for manufacturing capacitor using the capacitor dielectric | |
EA022723B1 (ru) | Многослойное покрытие, способ изготовления многослойного покрытия | |
Paul et al. | Antireflection coating on PMMA substrates by atomic layer deposition | |
Atuchin et al. | Composition-sensitive growth kinetics and dispersive optical properties of thin Hf x Ti 1− x O 2 (0≤ x≤ 1) films prepared by the ALD method | |
Kasikov et al. | Refractive index gradients in TiO2 thin films grown by atomic layer deposition | |
US20190382893A1 (en) | Methods to deposit controlled thin layers of transition metal dichalcogenides | |
JP6812793B2 (ja) | 積層体及びその製造方法、並びにガスバリアフィルム及びその製造方法 | |
CN110767668B (zh) | 含纳米级表面的clcc封装体盖板、封装体和摄像模组 | |
Kaipio et al. | Atomic layer deposition, characterization, and growth mechanistic studies of TiO2 thin films | |
Hussin et al. | Growth of TiO2 thin films by atomic layer deposition (ALD) | |
US9799821B2 (en) | Silicon substrate having ferroelectric film attached thereto | |
TWI482874B (zh) | 金紅石結構氧化鈦的製備方法及其疊層結構 | |
EP3926071A1 (en) | Method and apparatus for filling gap using atomic layer deposition | |
US20200369833A1 (en) | Moisture barrier film, moisture barrier device including the same and method for preparing moisture barrier device | |
WO2011004602A1 (ja) | エピタキシャルウェーハおよびその製造方法 | |
WO2013157770A1 (ja) | 無機膜を用いた水分透過防止膜の製造方法、無機膜を用いた水分透過防止膜及び電気、電子封止素子 | |
JP4958086B2 (ja) | エピタキシャルナノTiO2粒子コーティング及びその作製方法 | |
CN107966750B (zh) | 一种激光薄膜及其制备方法和应用 | |
JP6554810B2 (ja) | 積層体及びその製造方法、並びにガスバリアフィルム |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: BENEQ CORP. Free format text: FORMER OWNER: PLANAR SYSTEMS OY Effective date: 20130104 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130104 Address after: Finland Vantaa Patentee after: Times Nike Corp. Address before: Espoo, Finland Patentee before: PLANAR SYSTEMS, Inc. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20230426 Address after: Room 205-5-7, 2nd Floor, East Office Building, No. 45 Beijing Road, Qianwan Bonded Port Area, Qingdao, Shandong Province, China (Shandong) Pilot Free Trade Zone (A) Patentee after: QINGDAO SIFANG SRI INTELLIGENT TECHNOLOGY Co.,Ltd. Address before: Finland Vantaa Patentee before: Times Nike Corp. |
|
TR01 | Transfer of patent right |