CN1808621A - 具有提高的读稳定性的存储单元、存储器阵列及集成电路 - Google Patents
具有提高的读稳定性的存储单元、存储器阵列及集成电路 Download PDFInfo
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- CN1808621A CN1808621A CNA200510123501XA CN200510123501A CN1808621A CN 1808621 A CN1808621 A CN 1808621A CN A200510123501X A CNA200510123501X A CN A200510123501XA CN 200510123501 A CN200510123501 A CN 200510123501A CN 1808621 A CN1808621 A CN 1808621A
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- storage unit
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
Abstract
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Claims (21)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US64058704P | 2004-12-30 | 2004-12-30 | |
US60/640,587 | 2004-12-30 | ||
US11/069,018 | 2005-02-28 |
Publications (2)
Publication Number | Publication Date |
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CN1808621A true CN1808621A (zh) | 2006-07-26 |
CN100524518C CN100524518C (zh) | 2009-08-05 |
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Application Number | Title | Priority Date | Filing Date |
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CNB200510123501XA Active CN100524518C (zh) | 2004-12-30 | 2005-11-17 | 具有提高的读稳定性的存储单元、存储器阵列及集成电路 |
Country Status (3)
Country | Link |
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US (1) | US7106620B2 (zh) |
CN (1) | CN100524518C (zh) |
TW (1) | TWI420536B (zh) |
Cited By (13)
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CN102074267A (zh) * | 2009-10-08 | 2011-05-25 | Arm有限公司 | 具有改善的读取稳定性的存储器 |
CN102157194A (zh) * | 2010-02-12 | 2011-08-17 | 台湾积体电路制造股份有限公司 | 一种静态随机存取内存及适用于其的方法 |
US8385136B2 (en) | 2010-10-27 | 2013-02-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory circuit and method of operating the same |
CN102089881B (zh) * | 2008-05-29 | 2013-03-27 | 格罗方德半导体公司 | 制造基于栅控横向晶闸管的随机存取存储器(gltram)单元的方法 |
CN103208305A (zh) * | 2012-01-17 | 2013-07-17 | 飞思卡尔半导体公司 | 歪斜的静态随机存取存储器单元 |
CN105489241A (zh) * | 2014-10-13 | 2016-04-13 | 中芯国际集成电路制造(上海)有限公司 | 静态随机存储器 |
CN107251143A (zh) * | 2015-02-23 | 2017-10-13 | 高通股份有限公司 | 用于采用p型场效应晶体管(pfet)写入端口的存储器位胞元的位线正升压写入辅助电路和相关系统及方法 |
CN109524035A (zh) * | 2018-10-10 | 2019-03-26 | 中国科学院上海微系统与信息技术研究所 | 存储单元、嵌入式存储器及其读写方法 |
CN109684665A (zh) * | 2018-11-21 | 2019-04-26 | 浙江大学城市学院 | 基于FinFET的三值SRAM单元电路及控制方法 |
US10432148B2 (en) | 2012-01-27 | 2019-10-01 | Nxp Usa, Inc. | Phase shift and attenuation circuits for use with multiple-path amplifiers |
CN110364193A (zh) * | 2018-04-11 | 2019-10-22 | 中芯国际集成电路制造(天津)有限公司 | 静态随机存取存储单元、静态随机存取存储器及电子装置 |
CN112837730A (zh) * | 2019-11-25 | 2021-05-25 | 台湾积体电路制造股份有限公司 | 存储器单元、存储器阵列、sram器件及其方法 |
CN113380291A (zh) * | 2020-05-29 | 2021-09-10 | 台湾积体电路制造股份有限公司 | 存储单元及其操作方法 |
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US9230910B2 (en) | 2006-03-09 | 2016-01-05 | Tela Innovations, Inc. | Oversized contacts and vias in layout defined by linearly constrained topology |
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US7956421B2 (en) | 2008-03-13 | 2011-06-07 | Tela Innovations, Inc. | Cross-coupled transistor layouts in restricted gate level layout architecture |
US8448102B2 (en) | 2006-03-09 | 2013-05-21 | Tela Innovations, Inc. | Optimizing layout of irregular structures in regular layout context |
US7446352B2 (en) | 2006-03-09 | 2008-11-04 | Tela Innovations, Inc. | Dynamic array architecture |
US8839175B2 (en) | 2006-03-09 | 2014-09-16 | Tela Innovations, Inc. | Scalable meta-data objects |
US8653857B2 (en) | 2006-03-09 | 2014-02-18 | Tela Innovations, Inc. | Circuitry and layouts for XOR and XNOR logic |
US7763534B2 (en) | 2007-10-26 | 2010-07-27 | Tela Innovations, Inc. | Methods, structures and designs for self-aligning local interconnects used in integrated circuits |
US9035359B2 (en) | 2006-03-09 | 2015-05-19 | Tela Innovations, Inc. | Semiconductor chip including region including linear-shaped conductive structures forming gate electrodes and having electrical connection areas arranged relative to inner region between transistors of different types and associated methods |
US9563733B2 (en) | 2009-05-06 | 2017-02-07 | Tela Innovations, Inc. | Cell circuit and layout with linear finfet structures |
US8541879B2 (en) | 2007-12-13 | 2013-09-24 | Tela Innovations, Inc. | Super-self-aligned contacts and method for making the same |
GB0618045D0 (en) * | 2006-09-13 | 2006-10-25 | Cavendish Kinetics Ltd | Non-volatile memory bitcell |
US7420836B1 (en) * | 2007-02-13 | 2008-09-02 | International Business Machines Corporation | Single-ended memory cell with improved read stability and memory using the cell |
US7888705B2 (en) | 2007-08-02 | 2011-02-15 | Tela Innovations, Inc. | Methods for defining dynamic array section with manufacturing assurance halo and apparatus implementing the same |
US8667443B2 (en) | 2007-03-05 | 2014-03-04 | Tela Innovations, Inc. | Integrated circuit cell library for multiple patterning |
US20080310220A1 (en) * | 2007-06-13 | 2008-12-18 | International Business Machines Corporation | 3-d sram array to improve stability and performance |
US7755926B2 (en) * | 2007-06-13 | 2010-07-13 | International Business Machines Corporation | 3-D SRAM array to improve stability and performance |
US7660150B2 (en) * | 2007-12-31 | 2010-02-09 | Texas Instruments Incorporated | Memory cell having improved write stability |
CN101494222B (zh) * | 2008-01-23 | 2010-08-25 | 苏州东微半导体有限公司 | 半导体存储器器件、半导体存储器阵列及写入方法 |
US8453094B2 (en) | 2008-01-31 | 2013-05-28 | Tela Innovations, Inc. | Enforcement of semiconductor structure regularity for localized transistors and interconnect |
US7939443B2 (en) | 2008-03-27 | 2011-05-10 | Tela Innovations, Inc. | Methods for multi-wire routing and apparatus implementing same |
US7706174B2 (en) * | 2008-05-15 | 2010-04-27 | The University Of Bristol | Static random access memory |
US7826251B2 (en) * | 2008-05-22 | 2010-11-02 | International Business Machines Corporation | High performance metal gate polygate 8 transistor SRAM cell with reduced variability |
US7940560B2 (en) * | 2008-05-29 | 2011-05-10 | Advanced Micro Devices, Inc. | Memory cells, memory devices and integrated circuits incorporating the same |
US7864600B2 (en) * | 2008-06-19 | 2011-01-04 | Texas Instruments Incorporated | Memory cell employing reduced voltage |
SG10201608214SA (en) | 2008-07-16 | 2016-11-29 | Tela Innovations Inc | Methods for cell phasing and placement in dynamic array architecture and implementation of the same |
US9122832B2 (en) | 2008-08-01 | 2015-09-01 | Tela Innovations, Inc. | Methods for controlling microloading variation in semiconductor wafer layout and fabrication |
JP4954954B2 (ja) * | 2008-08-07 | 2012-06-20 | パナソニック株式会社 | 半導体記憶装置 |
TWI381380B (zh) * | 2008-09-18 | 2013-01-01 | Aicestar Technology Suzhou Corp | 靜態隨機存取記憶體及其形成與控制方法 |
US7969759B1 (en) * | 2008-12-19 | 2011-06-28 | Suvolta, Inc. | Method and apparatus for improving SRAM write operations |
US7961499B2 (en) * | 2009-01-22 | 2011-06-14 | Qualcomm Incorporated | Low leakage high performance static random access memory cell using dual-technology transistors |
US8138541B2 (en) * | 2009-07-02 | 2012-03-20 | Micron Technology, Inc. | Memory cells |
US8661392B2 (en) | 2009-10-13 | 2014-02-25 | Tela Innovations, Inc. | Methods for cell boundary encroachment and layouts implementing the Same |
US8296698B2 (en) * | 2010-02-25 | 2012-10-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | High-speed SRAM |
US9858986B2 (en) * | 2010-08-02 | 2018-01-02 | Texas Instruments Incorporated | Integrated circuit with low power SRAM |
EP2439744B1 (en) * | 2010-09-13 | 2013-12-04 | Katholieke Universiteit Leuven, K.U. Leuven R&D | Variability resilient sense amplifier with reduced energy consumption |
US9159627B2 (en) | 2010-11-12 | 2015-10-13 | Tela Innovations, Inc. | Methods for linewidth modification and apparatus implementing the same |
US9171634B2 (en) * | 2013-03-14 | 2015-10-27 | Arm Limited | Memory device and method of controlling leakage current within such a memory device |
US9460777B2 (en) * | 2013-08-02 | 2016-10-04 | Qualcomm Incorporated | SRAM read buffer with reduced sensing delay and improved sensing margin |
US9401200B1 (en) | 2014-12-22 | 2016-07-26 | Altera Corporation | Memory cells with p-type diffusion read-only port |
RU2580071C1 (ru) * | 2015-04-07 | 2016-04-10 | Федеральное государственное учреждение "Федеральный научный центр Научно-исследовательский институт системных исследований Российской академии наук"(ФГУ ФНЦ НИИСИ РАН) | Ячейка памяти комплементарной металл-оксид-полупроводниковой структуры озу |
CN107039070B (zh) * | 2016-01-29 | 2022-06-14 | 三星电子株式会社 | 用于选择性地执行隔离功能的半导体器件及其布局替代方法 |
CN114898790A (zh) | 2016-01-29 | 2022-08-12 | 三星电子株式会社 | 用于选择性地执行隔离功能的半导体器件及其布局替代方法 |
US10140224B2 (en) | 2016-10-20 | 2018-11-27 | Qualcomm Incorporated | Noise immune data path scheme for multi-bank memory architecture |
US10515969B2 (en) * | 2016-11-17 | 2019-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10748911B2 (en) | 2017-11-13 | 2020-08-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit for low power SRAM |
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- 2005-11-17 CN CNB200510123501XA patent/CN100524518C/zh active Active
- 2005-12-02 TW TW094142696A patent/TWI420536B/zh active
Cited By (22)
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---|---|---|---|---|
CN102089881B (zh) * | 2008-05-29 | 2013-03-27 | 格罗方德半导体公司 | 制造基于栅控横向晶闸管的随机存取存储器(gltram)单元的方法 |
CN102074267B (zh) * | 2009-10-08 | 2015-04-29 | Arm有限公司 | 具有改善的读取稳定性的存储器 |
CN102074267A (zh) * | 2009-10-08 | 2011-05-25 | Arm有限公司 | 具有改善的读取稳定性的存储器 |
CN102157194A (zh) * | 2010-02-12 | 2011-08-17 | 台湾积体电路制造股份有限公司 | 一种静态随机存取内存及适用于其的方法 |
US8325510B2 (en) | 2010-02-12 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Weak bit compensation for static random access memory |
US9208855B2 (en) | 2010-02-12 | 2015-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Weak bit compensation for static random access memory |
US8385136B2 (en) | 2010-10-27 | 2013-02-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory circuit and method of operating the same |
CN103208305A (zh) * | 2012-01-17 | 2013-07-17 | 飞思卡尔半导体公司 | 歪斜的静态随机存取存储器单元 |
CN103208305B (zh) * | 2012-01-17 | 2017-08-11 | 飞思卡尔半导体公司 | 歪斜的静态随机存取存储器单元 |
US10432148B2 (en) | 2012-01-27 | 2019-10-01 | Nxp Usa, Inc. | Phase shift and attenuation circuits for use with multiple-path amplifiers |
CN105489241A (zh) * | 2014-10-13 | 2016-04-13 | 中芯国际集成电路制造(上海)有限公司 | 静态随机存储器 |
CN105489241B (zh) * | 2014-10-13 | 2018-07-03 | 中芯国际集成电路制造(上海)有限公司 | 静态随机存储器 |
CN107251143A (zh) * | 2015-02-23 | 2017-10-13 | 高通股份有限公司 | 用于采用p型场效应晶体管(pfet)写入端口的存储器位胞元的位线正升压写入辅助电路和相关系统及方法 |
CN107251143B (zh) * | 2015-02-23 | 2020-10-27 | 高通股份有限公司 | 将数据写入到存储器位胞元的方法、存储系统及计算机可读媒体 |
CN110364193A (zh) * | 2018-04-11 | 2019-10-22 | 中芯国际集成电路制造(天津)有限公司 | 静态随机存取存储单元、静态随机存取存储器及电子装置 |
CN109524035A (zh) * | 2018-10-10 | 2019-03-26 | 中国科学院上海微系统与信息技术研究所 | 存储单元、嵌入式存储器及其读写方法 |
CN109524035B (zh) * | 2018-10-10 | 2020-06-09 | 中国科学院上海微系统与信息技术研究所 | 存储单元、嵌入式存储器及其读写方法 |
CN109684665A (zh) * | 2018-11-21 | 2019-04-26 | 浙江大学城市学院 | 基于FinFET的三值SRAM单元电路及控制方法 |
CN109684665B (zh) * | 2018-11-21 | 2024-02-02 | 浙江大学城市学院 | 基于FinFET的三值SRAM单元电路及控制方法 |
CN112837730A (zh) * | 2019-11-25 | 2021-05-25 | 台湾积体电路制造股份有限公司 | 存储器单元、存储器阵列、sram器件及其方法 |
CN112837730B (zh) * | 2019-11-25 | 2024-03-26 | 台湾积体电路制造股份有限公司 | 存储器单元、存储器阵列、sram器件及其方法 |
CN113380291A (zh) * | 2020-05-29 | 2021-09-10 | 台湾积体电路制造股份有限公司 | 存储单元及其操作方法 |
Also Published As
Publication number | Publication date |
---|---|
US7106620B2 (en) | 2006-09-12 |
CN100524518C (zh) | 2009-08-05 |
US20060146638A1 (en) | 2006-07-06 |
TW200639876A (en) | 2006-11-16 |
TWI420536B (zh) | 2013-12-21 |
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