CN1856871A - 在集成电路微冷却器的设计和制造中使用自组装纳米结构的系统和方法 - Google Patents

在集成电路微冷却器的设计和制造中使用自组装纳米结构的系统和方法 Download PDF

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CN1856871A
CN1856871A CNA2004800242823A CN200480024282A CN1856871A CN 1856871 A CN1856871 A CN 1856871A CN A2004800242823 A CNA2004800242823 A CN A2004800242823A CN 200480024282 A CN200480024282 A CN 200480024282A CN 1856871 A CN1856871 A CN 1856871A
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C·丹格洛
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Abstract

公开了采用碳纳米管或纳米线阵列以减小在集成电路芯片和散热器之间热接触电阻的散热器结构。碳纳米管阵列与布置在纳米管之间的导热金属填料结合。这个结构产生了具有高轴向和横向导热性的热界面。

Description

在集成电路微冷却器的设计 和制造中使用自组装纳米结构的系统和方法
技术领域
本发明涉及移除在芯片组件中使用的集成电路和元件产生的热量的，以及便于移除所述热量的封装。更具体地，本发明公开了用于改善连接到集成电路器件的散热器结构性能的自组装纳米结构的应用。
背景技术
用于冷却半导体IC的现有技术使用了大而昂贵的芯片封装，其具有连接到陶瓷或塑料封装的IC芯片的外部安装地翼状散热器。随着现代集成电路的速度和密度的增长，由这些芯片产生的功率也与增加的密度和功能呈几何比增加。在视频处理和CPU应用领域，散发由现在IC产生的热量的能力已经成为技术进展的一个重大局限。在现在的技术中，当裸片“附着”到散热器上时，加入了相对大的接口热电阻。这些多个接口具有增加整个裸片的散热电阻和使得传热更困难的不希望有的副作用。
图1(现有技术)是简化的集成电路结构的截面示意图。晶体管结构102形成在衬底100的顶表面附近。电连接106用于和在衬底100上的晶体管102和多个其他相似器件(未示出)连接。利用“焊球”104完成集成电路到印刷电路板或布线引线框架的互连。这种类型的封装经常称作“倒装芯片”器件。在现有技术中，由晶体管102产生的热能经过衬底100被抽取到芯片背面。通过减小由空气间隙和表面不平产生的界面传热电阻，可以利用热传输粘合层108以提高热传导。典型地，这个层可以由热脂或导热环氧树脂构成。这些材料虽然比固体表面/表面接触更好，当与固体金属比较时，仍然具有相对差的导热性。结果，背部芯片表面界面仍然表现出有效的导热性，其限制可以从芯片抽取的能量。
最近，美国专利申请公开号US2003/0117770已经公开了形成热界面的工艺，其采用碳纳米管以减小在电子器件和散热器之间的热阻。对准的纳米管束接受以熔化形式注入的高分子材料以产生复合物，该复合物放置在电子器件和散热器之间。纳米管沿热能方向平行对准。然而，高分子填充物在横向传热上贡献很小，可能会在器件表面产生局部的热点。对准的碳纳米管束的使用也可以导致减小的热传导。理论分子动力学模型已经示出了单个的碳纳米管展示了异乎寻常高的导热性，但是当以管到管接触形成碳纳米管束时，导热性会降低一个数量级(见例如Savas Berber等，Physics ReviewLetters，84，no.20，4613，2000年5月)。
美国专利申请公开US2003/231471公开了使用在CVD金刚石膜的沉积后生长的单壁或双壁碳纳米管阵列的集成电路封装。根据CVD金刚石膜的粗糙度，使用碳纳米管以辅助在电路硅裸片和集成散热器的表面之间形成热接触。为了保持弹性，没有填充在纳米管之间的填隙空位。然而该公开未能提供任何方法来减小衬垫(matting)和纳米管到纳米管的接触，其减小了结构的有效导热性。虽然CVD金刚石膜是好的导体，但它们不能与在多种散热结构中使用的许多其它的金属材料热兼容(来自膨胀系数)。另外，由于这些技术需要700℃至800℃的温度，所以用于生长碳纳米管的公知技术会阻碍直接在硅电路裸片上沉积碳纳米管。将完成的电路裸片曝露在这样高的温度下不是一个值得推荐的做法。
所需要的是一种通过集成几个热组件以使得从集成电路上的热表面的热传递的最大化，从而使界面电阻最小化的方法和结构。
发明内容
本发明的一个目的是提供一种具有散热器表面的散热器主体；多个单独分开的、用于将热能从至少一个集成电路芯片的表面传输到所述散热器表面的杆状纳米结构，所述多个单独分开的、杆状纳米结构布置在所述散热器表面和所述至少一个集成电路芯片的表面之间；以及在所述多个单独分开的、杆状纳米结构之间的填隙空位内布置的导热材料。
在本发明的一个实施例中，一种用于制造微冷却器件的方法包括在散热器主体的安装表面中形成浅腔，在所述浅腔内生长杆状纳米结构，在杆状纳米结构之间的填隙空位内沉积导热材料。
附图说明
当考虑到下面的详细描述时，将会更好地理解本发明。本说明书引用了附图，其中：
图1(现有技术)是集成电路结构的截面示意图；
图2是根据本发明实施例的附着在倒装芯片集成电路上的集成微冷却器件的示意性侧视图；
图3是根据本发明实施例的附着在多个倒装芯片集成电路上的集成微冷却器件的示意性侧视图；
图4是示出了根据本发明实施例的结构细节的翼状集成微冷却器件的截面示意图；
图5是根据本发明实施例的具有内部流道的集成微冷却器件的截面示意图；
图6是根据本发明实施例的碳纳米管的电子显微镜照片；
图7是根据本发明实施例的连接到多个倒装芯片集成电路的集成微冷却器件的截面示意图；
图8是说明根据本发明实施例的翼状集成微冷却器件的制造步骤的流程图；
图9是根据本发明实施例说明具有内部流道的集成微冷却器件的制造步骤的流程图；和
图10是根据本发明实施例在平坦化过程后的纳米结构的部分截面图。
具体实施方式
在本说明书的背景技术部分中已经说明了图1(现有技术)。
图2是根据本发明实施例的附着在倒装芯片集成电路芯片206上的集成微冷却器件202的示意性侧视图200。该集成微冷却器件202是与芯片206分开的结构，该芯片206包含高导电性、自组装纳米结构并与散热器件集成。以下为从安装在电路板210上的集成电路芯片206的表面208传输的热量提供低热阻通道。热界面层204提供包含纳米结构的低电阻界面以增强从芯片206的热传导，减小在芯片206中局部热点的影响，并且横向传导热量到具有比芯片206更大的基底面的散热器结构202。下面描述微冷却器件202的结构细节。本领域技术人员都知道，可以使用共晶层或热粘合剂(未示出)把芯片206和微冷却器202粘合在一起。另外，微冷却器件202、集成电路芯片206和电路板210可以用机械带、夹具或保持装置固定在一起(未示出)。
图3是根据本发明实施例的附着在多个倒装芯片集成电路(306a-306d)上的集成微冷却器件302的示意性侧视图300。在这个实施例中，微冷却器302的上和下表面都用来除去来自倒装芯片IC306a-306d的热能。安装在印刷电路板310a上的芯片306a和306b通过界面层304a把热量从表面308a和308b散发到器件302。安装在印刷电路板310b上的芯片306c和306d通过界面层304b把热量从表面308c和308d散发到器件302。本领域技术人员都知道，可以使用共晶层或热粘合剂(未示出)把芯片306和微冷却器302粘合在一起(未示出)。另外，微冷却器件302、集成电路芯片306和电路板310可以用机械带、夹具或保持装置固定在一起。虽然图3中示出的实施例包含四个集成电路，但是通过增加器件302的规模，可以加入任意数量的附加集成电路倒装芯片306，这对于本领域的普通技术人员很显然的。
图4是示出了根据本发明实施例的结构细节的翼状集成微冷却器件400的截面示意图。该器件400包括用于从倒装芯片402的表面418抽取热能的散热片主体404。通过包含层408、410和412的增强传热界面结构把热能传输到散热器表面420。散热器主体404装配有散热片414(或翼状结构)以通过对流、典型地通过由风扇或其它装置产生的强迫空气流来增强抽热。然而，如果合适也可以采用自然对流。同样，散热片414可以浸透在用于除去高能量流的比如水的液体或其它液相冷却剂中。散热器主体404可以由硅、金属或导热陶瓷制成。如铜或铝的金属是优选的，但是也可以使用由硅衬底形成的结构。如果使用硅，可以在散热片表面涂覆金属以增强横向导热。通过本领域技术人员公知的方法在散热主体404内部形成散热腔416以包含传热界面层408、410和412。
层408包含提供非常高的导热性的单独分开的、杆状的纳米结构以减小界面接触电阻。这些结构可以包括金属纳米线、或优选多壁碳纳米管(MWCNT)或多壁碳纳米纤维。金属纳米线(例如Au、Cu、Ni、氧化锌和硼化金属)是具有尺寸可与声子平均自由程(在室温下通常几十个纳米)相比拟的线状的金属晶体，以使得从允许有效传热特性和热接触的量子限制现象中受益。在一个示例中，由于Ni电极所展示出低的欧姆接触电阻，所以金属硼化物纳米线被认为具有好的热接触电阻。优选地，该MWCNT大致垂直于表面420和418，平行于热流动的方向。MWCNT具有非常高(在轴上)的导热性，通常在800至3000W/m-°K的范围内。它们可能是固体CVD金刚石膜的系数的两倍。它们优选地生长在微冷却器400表面作为独立式、垂直对准的、单独分开的碳纳米管(或纳米纤维)的阵列，其占据了从它们生长的地方开始的15和40％之间的表面。在一些实施例中，通过等离子增强CVD(PECVD)生长方法生长MWCNT。例如，可以使用由Jun Li等(Applied Physics Letters，vol.81，no.5，2002年7月)和L.De1zeit(J.Appl Physics 91，6027，2002年5月)等描述的方法。然而，虽然CNT的轴向导热性非常高，其横向导热性(在从纳米管到纳米管的非轴向方向)不是非常好。实际上，在轴向对准的纳米管之间的横向接触能够减小它们的有效轴向导热性。如果附着在衬底上的碳纳米管的数量太大(例如大于40％CNT密度)，Van der Waal力会产生导致差导热性的束或垫块的情况。在另一方面，如果覆盖密度太低(例如小于15％)，由于导热纳米管的数量的减少，导热性也会降低。覆盖密度的优选范围在约15％和40％之间，最优选为25％至40％。因此，与CNT的束或垫块相反，覆盖率在15％和40％之间的平行CNT能够提供更好的总导热性。为了改善横向导热，在MWCNT之间的填隙空位内布置导热材料。该导热材料在包含层的纳米管内提供横向导热。横向导热促进热量从相对小的硅裸片表面向散热主体404的大得多得表面区域扩散。它也减少了在芯片402的表面418上的局部热点。导热材料可以是金属或金属合金、导热陶瓷、CVD金刚石或导热聚合物。优选地，导热材料是如铜、铝、银、金的金属或它们的合金。在这些金属材料中，金和铜合金是最优选的。这通常是由于它们的高导热率、容易通过电镀或电化学沉积来沉积以及低的成本。对于本领域技术人员来说，铜电镀是在现代集成电路生产中通用的双镶嵌工艺。取决于导热填充材料的导热率，层408的厚度可以典型地在50至1000微米之间。
使用金属作为填充材料的另一希望的特征是它在厚度上显著地低于MWCNT。在某些实施例中，使用层408的平坦化以为良好的“长距离”接触而维持平整度。然而，“短距离”表面的不规则性(在几个微米的数量级)也能够显著影响界面热电阻。因此，希望MWCNT的一些部分从层408的主体延伸出来，以使得曝露的末端可以与这些表面的不规则性保持一致并改善热接触。当平坦化层408时，较软的金属材料被腐蚀得比较硬的纳米管更厉害，导致金属材料的底切。这个底切留下纳米管从复合层408延伸的部分。当用CMP(化学-机械平坦化)或电化学蚀刻技术平坦化层408时，该底切会自动发生。如果在芯片402和层408之间需要共晶金属接合，可以加上附加(可选的)粘合层406。在这种情况下，曝露的纳米管末端会伸入到该层中`并可能穿过它延伸。优选地，粘合层406是共晶金属，但是也可以使用基于胶结结剂成分的热聚合物。层412是可以与硅散热主体404结合使用的界面材料。典型地，层412可以由氮化硅化合物构成。对于金属散热主体404，层412是可选的，只需要用来辅助粘合催化物金属层410。使用金属催化物层410以启动和控制在层408中的纳米管的生长。金属催化物层410可以从Ti、Co、Cr、Pt、Ni和它们的合金中选择。优选地，金属催化物层410是Ni以及Ni合金。下面将讨论进一步与这些层相关的工艺条件。
图5是根据本发明实施例的具有内部流道514的集成微冷却器件500的截面示意图。器件500包括用于从倒装芯片502的表面518抽取热能的散热器主体504。通过包含层508、510和512的增强传热界面结构将热量传输到散热器表面520。层508-512留在在主体504中形成的散热腔516中。在这个实施例中，散热器主体504包含密封的流道514以除去从芯片502传递的热能。液体和气体冷却都是可能的，但是对这个实施例，由于例如水的液体冷却剂的特有热容量，优选液体冷却。对于非常高速的散热系统或在非常高速处理器需要次环境结温的情况下，也可能使用致冷剂。由于通过这样的系统遇到(encounter)高的热流通量，所以由本发明实施例提供的低热电阻对可靠性操作是极其重要的。层506-512具有相同的功能，由如上所述由与相应层406-412相同的材料构成。
图6是根据本发明实施例的碳纳米管的电子显微镜照片。在这个图中，MWCNT的对准的、单独分开的、平行的特点是很显然的。同样很明显的是，为了好的横向导热性在纳米管之间需要填充的填隙空位。
图7是的附着到根据本发明实施例的多个倒装芯片集成电路的集成微冷却器件700的截面示意图。该器件700包括用于从产生热能的多个倒装芯片702a和702b抽取热能的散热器主体704。通过包含层508a-512a和508b-512b的增强传热界面结构将热量传输到散热器表面720a和720b。层508a-512a和508b-512b分别留在散热腔716a和716b中。在这个实施例中，散热器主体704包含密封的流道714以除去从芯片502传递的热能。对这个实施例，由于增加的热负荷，由于例如水的液体冷却剂所特有的热容量，优选液体冷却。对于除去高的热负荷或在非常高速处理器需要次环境结温的情况下，也可能使用致冷剂。层706a-712a和706b-712b具有相同的功能并且由如上所述与相应层406-412相同的材料构成。
图8是说明根据本发明实施例的翼状集成微冷却器件的制造的示例步骤的流程图800。在802，为衬底或散热器主体(例如404)选择适当的材料。随后步骤涉及其中选择硅为衬底的过程。在804，在第一(或底)表面上构图形成散热腔(例如416)。在806，蚀刻散热腔，在808，在腔(例如416)中沉积界面材料(例如412)。如上所述，在某些实施例中这个界面材料是氮化硅。对于本领域技术人员选择沉积氮化硅有很多技术，例如CVD或溅射。可选择地，如果选择金属或陶瓷作为散热主体材料，通过机械加工可以制造散热腔。在810，在界面层上沉积可选的导电层以促进随后催化物层的沉积和粘合。导电层可以由厚度在3nm-200nm的范围内的Ti、Cr或Pt构成。如果散热器主体是金属，那么可以不需要导电层。在812，使用CVD、PVD、电镀或无电镀沉积来对从选自Ti、Co、Cr、Pt、Ni和它们的合金的催化物材料进行沉积，并沉积3nm至30nm的厚度。在814，生长单独分开的碳纳米管的碳纳米管阵列(例如作为层408的一部分)。在某些实施例中，该阵列分别经前面提到的J.Li和A.Delzeit的方法通过PECVD生长阵列。在816，在碳纳米管之间沉积导热材料。对于金属的导热材料，典型地通过电化学沉积或CVD来沉积该材料对于本领域技术人员来说是公知的。如果使用CVD金刚石填隙物质，可以使用本领域已知的CVD工艺。在818，通过CMP、电化学腐蚀或者两者的结合来平坦化包含层(例如408)的碳纳米管。在820，如果需要，则增加适当厚度的可选共晶粘合层(例如406)。在822，散热片(例如414)在硅衬底的第二(或顶)表面中构图。在824，用公知的方法腐蚀散热片。在826，散热片涂覆有可选的金属涂层或CVD金刚石，其沉积了适当厚度以使得沿着散热片表面的温度梯度最小化。对于金属散热器主体(例如400)的情况，通过已知机械工艺制造散热片。
图9是说明根据本发明实施例的具有内部流道的集成微冷却器件的制造步骤的流程图900。在902，在传热主体(例如504)中制造流道(例如514)。对于金属主体，可以使用标准的机械加工技术。对于硅衬底，可以如图8中示出的实施例中描述的那样制造散热片。合适的金属、陶瓷或硅片或盖子粘合地与散热片的顶部的平坦表面接合以建立封闭通道(例如514)。
图10是根据本发明实施例的在平坦化过程后的纳米结构的部分截面图1000。如图所示，碳纳米管或纳米线1008从金属/催化物层1002以大致平行的结构生长。如前面所述，导热填充材料1004放置在纳米结构1008之间的空隙中。纳米结构的平坦化在纳米结构的末端和填充材料的凹陷的平坦化表面之间产生间隙1006。当包含显著不同硬度的成分的复合材料被平坦化时，间隙1006由化学机械平坦化(CMP)工艺产生。在纳米结构是MWCNT以及填料是如铜、铝或银的金属的情况下，由于金属比碳纳米管软得多，所以平坦化工艺会底切填料。由于比如铜的基本金属比相对化学不活泼的碳纳米管更容易反应并对化学溶剂敏感，所以采用化学(或电化学)蚀刻填料金属的时候会产生相同的效应。
在间隙1006中未支撑的纳米结构是相对有弹性的，使得曝露的末端扭曲或弯曲(在微米级)，以与复合在集成电路芯片的热产生表面中的起伏和缺陷。这种“毛刷”效应产生与纳米结构末端的密切接触，允许沿着纳米管的导热性为最大的轴上进行抽热。如果使用共晶或粘合层，纳米结构的曝露端会伸入该层中，并会使得当共晶或粘合层是液体时符合相对表面，这可能出现在两个表面接合之前。所期望的间隙尺寸1006取决于电路、硅裸片和平坦化的微冷却器表面的表面平坦度。表面粗糙度的RMS值被认为在0.2um至3um的范围内，并最优选在该范围的下端。
应当认为上述的多个实施例仅仅作为本发明的示例。它们并不倾向于穷尽或限制本发明公开的形式。本领域的技术人员将会很容易知道在不脱离这里描述的本发明的精神的情况下，可以进行其它修改和变化。因此，本发明是由下面的权利要求所限定的。

Claims (20)

1、一种微冷却器件结构，包括：
具有散热器表面的散热器主体；
多个单独分开的、用于将热能从至少一个集成电路芯片的表面传输到所述散热器表面的杆状纳米结构，所述多个单独分开的、杆状纳米结构布置在所述散热器表面和所述至少一个集成电路芯片的表面之间；以及
在所述多个单独分开的、杆状纳米结构之间的填隙空位内布置的导热材料。
2、如权利要求1所述的微冷却器件，其中所述多个单独分开的、杆状纳米结构是多壁碳纳米管。
3、如权利要求2所述的微冷却器件，其中所述多壁碳纳米管的取向基本垂直于所述至少一个集成电路芯片的表面。
4、如权利要求1所述的微冷却器件，其中所述多个单独分开的、杆状纳米结构是金属纳米线。
5、如权利要求4所述的微冷却器件，其中所述金属纳米线的取向基本垂直于所述至少一个集成电路芯片的表面。
6、如权利要求1所述的微冷却器件，其中所述导热材料包括铜。
7、如权利要求1所述的微冷却器件，其中所述导热材料包括铜的合金。
8、如权利要求1所述的微冷却器件，其中所述导热材料包括银。
9、如权利要求1所述的微冷却器件，其中所述导热材料包括铝。
10、如权利要求1所述的微冷却器件，其中所述散热器主体由散热片冷却。
11、如权利要求1所述的微冷却器件，其中所述散热器主体由流经在其中形成的通道的液体冷却。
12、一种制造微冷却器件的方法，包括：
在散热器主体的安装表面中形成散热腔；
在所述浅腔中生长杆状纳米结构；和
在所述杆状纳米结构之间的填隙空位中沉积导热材料。
13、如权利要求12所述的制造微冷却器件的方法，其中所述杆状纳米结构是多壁碳纳米管。
14、如权利要求12所述的制造微冷却器件的方法，其中所述杆状纳米结构是金属纳米线。
15、如权利要求12所述的制造微冷却器件的方法，其中所述导热材料包括铜。
16、如权利要求12所述的制造微冷却器件的方法，其中所述导热材料包括铝。
17、如权利要求12所述的制造微冷却器件的方法，其中所述导热材料包括银。
18、如权利要求12所述的制造微冷却器件的方法，其中所述杆状纳米结构是单独分开的并且取向基本垂直于所述散热器主体的所述安装表面。
19、如权利要求18所述的制造微冷却器件的方法，进一步包括：
平坦化所述杆状纳米结构的末端以使得所述杆状纳米结构延伸出所述导热材料的平坦化表面。
20、如权利要求19所述的制造微冷却器件的方法，进一步包括：
在所述杆状纳米结构的末端上沉积粘合层。
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US7109581B2 (en) 2006-09-19
US8039953B2 (en) 2011-10-18
KR20070027482A (ko) 2007-03-09
US20050046017A1 (en) 2005-03-03
EP1658634A2 (en) 2006-05-24
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WO2005041256A3 (en) 2006-04-13
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