CN1874011A - LED device - Google Patents
LED device Download PDFInfo
- Publication number
- CN1874011A CN1874011A CNA2005100264424A CN200510026442A CN1874011A CN 1874011 A CN1874011 A CN 1874011A CN A2005100264424 A CNA2005100264424 A CN A2005100264424A CN 200510026442 A CN200510026442 A CN 200510026442A CN 1874011 A CN1874011 A CN 1874011A
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- CN
- China
- Prior art keywords
- light
- emitting diode
- chip
- backlight unit
- diode assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The set for packaging LED in low thermal resistance includes following parts: a LED for converting electrical energy to electromagnetic wave; a metal conducting wire frame; insulating material for covering the metal conducting wire frame to form a cavity; an optical lens setup above the cavity and fixed with the insulating material; primal carrier carries chip of LED, and connects chip of LED to conducting wire frame in welding mode, and also being as thermovent; material in high transmittance covers chip of LED.
Description
Technical field
The present invention relates to a kind of light-emitting diode assembly, especially a kind of light-emitting diode assembly with low thermal resistance can make this light-emitting diode operate under high power and unlikely its device internal temperature that makes is too high and lost efficacy or undermine the life-span.This device can be a kind of reliable LED source for indication, illumination, backlight or decoration use.
Background technology
Traditional light-emitting diode assembly (as shown in Figure 1) places light-emitting diode chip for backlight unit 10 in the groove on 11 1 electrodes of conductive metal frames, the function of this groove is the reflection of light face, and use gold thread or aluminum steel 14 that these light-emitting diode chip for backlight unit 10 electrodes are caused on another utmost point conductive metal frames to form path, this light-emitting diode chip for backlight unit 10 and conductive metal frames 11 are coated by transparent epoxy resin 12 and only appear two leg.This light-emitting diode assembly has been used in the indicator light of light-emitting diode traffic signal light, automobile the 3rd brake light and electronic product in a large number widely.
The light-emitting diode assembly that another kind is widely used (as shown in Figure 2) places light-emitting diode chip for backlight unit 10 on the printed substrate 13, and make this electrode of light emitting diode receive electrode on the printed substrate with gold thread or aluminum steel 14, fluorescent material also can be added to produce white light again coated with the good epoxy resin 12 of light transmission in the outside in epoxy resin.
These two kinds of light-emitting diode assemblies all use bonding wire to connect chip and lead, this bonding wire mostly is gold thread greatly, so certain ductility and intensity are all arranged, extensively adopted by the semiconductor packages industry, because costing an arm and a leg of gold, and no matter bonding wire is in machinery equipment or makes the cost that all occupies significant proportion on the technology, so bonding wire craft has certain burden on whole packaging cost.Simultaneously owing to the consideration of chip design to area and optics, basically the bonding wire diameter can only be 0.8 to 1.5mils mostly, its stress that can bear is quite limited, therefore bonding wire is broken into one of main factor of LED package product failure, especially after Pb-free solder technology becomes main flow gradually in recent years, higher welding temperature increases the stress that causes because of thermal coefficient of expansion between encapsulating material, cause product to lose efficacy because of the bonding wire fracture, so the cancellation bonding wire can be a major improvement of LED package.
The shortcoming of these two kinds of light-emitting diode assemblies is that chip is too high to the thermal resistance value of pin, because chip is the thermal source of this device, when heat radiation is not enough, can cause the temperature of chip to rise, when temperature is too high, then can cause the life-span to shorten, brightness descends, even make this failure of apparatus, so heat radiation is one of a light-emitting diode assembly very important problem.
Generally speaking, the heat dissipation characteristics of light-emitting diode assembly is defined by thermal resistance value, because unique thermal source of for this reason installing of light-emitting diode chip for backlight unit and pin is its heat radiation approach, so we define the heat dissipation characteristics of this light-emitting diode assembly usually with P-N composition surface to the thermal resistance value of its pin of light-emitting diode chip for backlight unit, with R θ
J-PExpression, its meaning is that (junction) can mathematical expression represent to the thermal resistance of pin (pin) from the composition surface:
Rθ
J-P＝T
J-T
P/Q
T
J: the temperature on light-emitting diode chip for backlight unit composition surface;
T
P: the temperature of light-emitting diode assembly pin;
Q: by the heat flux (heat flux) of this hot biography approach.
Because light-emitting diode chip for backlight unit be unique thermal source of this device, and its by electric energy except that small part after changing with the dissipation of electromagnetic wave form, most of energy all converts heat energy to.We can simply be passed to the heat energy of pin so that the electric energy representative that this light-emitting diode chip for backlight unit was consumed is required via this device, so this mathematical expression can be expressed as again:
Rθ
J-P＝T
J-T
P/I
f×V
f
I
f: the electric current of light-emitting diode chip for backlight unit;
V
f: the voltage of light-emitting diode chip for backlight unit.
Because the pin temperature is the parameter of system, its value is determined by the heat dissipation characteristics of this system, under certain heat flux, its value is fixing after system's decision, irrelevant with the heat dissipation characteristics of this light-emitting diode assembly, so we can be learnt by above-mentioned mathematical notation formula: when the thermal resistance value of light-emitting diode assembly heals when high, its chip P-N composition surface temperature is also higher.
On the other hand, learn from heat conduction (conduction heat transfer) that the thermal resistance that thermally conductive heat passes can simply be expressed as:
Rθ＝L/K×A
L: the length of heat conduction path;
K: the coefficient of heat conduction of heat-conducting substance (thermal conductivity coefficient);
A: the normal section of heat conduction path is long-pending.
Therefore we can learn, the heat radiation distance of light-emitting diode assembly sectional area longer, this distance is healed the coefficient of heat conduction of little and this material when lower, and the thermal resistance of this device is just bigger.Just must make its heat radiation distance shorter better so design the light-emitting diode assembly of low thermal resistance, increase its area of dissipation and select the high material of the coefficient of heat conduction for use.
And its mainly heat radiation approach of above-mentioned light-emitting diode assembly is via support or printed substrate heat radiation from chip, the material of printed substrate mostly is the plastics class, its coefficient of heat conduction is mostly very low, so can't directly dispel the heat by printed substrate, and the copper facing line thicknesses on the printed substrate has only tens of extremely hundreds of microns more, its heat radiation sectional area is too little, and is so the thermal resistance value that should design is very big, general many between 500-1000K/W.When using power high slightly, be easy to cause light-emitting diode chip for backlight unit overheated.And be the heat radiation approach with the support, its material is copper material or iron material mostly, its heat dissipation characteristics is rather good, but its sectional area is but too little, so its thermal resistance is approximately between the 150-250K/W, the electric current that this device can be loaded is also only about 30mA.
Be head it off, other design is also arranged, improve the problem of previous heat radiation sectional area deficiency.As shown in Figure 3, its pin area is increased, can effectively reduce its thermal resistance so really with the mode that increases pin, but because its heat radiation approach is still very long, so its thermal resistance value is still up to 50-75K/W.
Further invent as U.S. Pat 6 thereafter, 274,924 (as Fig. 4), use the lead frame 11 of insulating material 15 coatings, leave cave, a chamber in the middle of this insulating material, and insert an extra hot terminal member (heat sink) 16 that increases, again light-emitting diode chip for backlight unit 10 is fixed on the inferior carrier (submount) 17 from this cave, chamber, be fixed in again on this hot terminal member, and connect its circuit to the both positive and negative polarity lead frame with gold thread.This invention is owing to use an extra hot terminal member that increases, can effectively reduce the heat conduction distance length, increase the heat conduction sectional area, thereby the thermal resistance that can reduce this light-emitting diode assembly is to 10-15K/W.But from making angle, the hot terminal member that adds has increased the complexity of making, and has also increased operation, and has increased the whole height of this light-emitting diode assembly.Another problem is that this package design is used bigger chip, and the package area increase makes storeroom also increase relatively because of the caused stress of thermal expansion coefficient difference, and the risk of bonding wire fracture also heightens.
Summary of the invention
Technical problem to be solved by this invention provides a kind of light-emitting diode assembly, it is except that the characteristic with low thermal resistance, and can take into account the simplicity of its manufacturing simultaneously and make the thickness of this light-emitting diode assembly can drop to minimum, reach compact requirement, to shorten simultaneously pitch of weld from or fully phase out the reliability that bonding wire significantly promotes product.
For solving the problems of the technologies described above, technical scheme of the present invention is, comprise a conductive metal frames, this lead frame is divided into positive wire support and cathode conductor support with etching or impact style, this support is fixed by an insulator, have cave, a chamber to form crystal bonding area in this insulator, the described both positive and negative polarity wire support back side has part to be exposed to cave, the formed chamber of this insulator.Light-emitting diode chip for backlight unit places on time carrier that silicon substrate formed to cover crystal type, be printed with circuit on this time carrier, and using welding manner that this light-emitting diode chip for backlight unit is connected with positive wire support and cathode conductor support by the circuit on this time carrier, the material of high light transmittance places in the crystal bonding area in order to cover this light-emitting diode chip for backlight unit.
Further improvement as invention is on this high light transmittance material optical lens to be set, the material of these lens can be epoxy resin, silica gel, glass, Teflon or other meets the material that light transmission requires, these lens can reduce inner full-reflection light (Total internal reflection) and improve brightness, and can reach the purpose that changes bright dipping light type (light pattern) according to its optical design, to meet different optical demands.
Another kind of the present invention further improves, and uses ejection formation (injection molding) or pressing mold (transfer molding) mode to form an optical lens with the high light transmittance material in described cave, solid brilliant chamber by both positive and negative polarity wire support and the formed holder combination of insulator.
Of the present invention another further improve and be, use a plurality of light-emitting diode chip for backlight unit, it can be homochromy optical chip or heterochromatic optical chip, its syndeton can be series, parallel or common the moon, sun altogether.Can improve its brightness thus, or when using heterochromatic optical chip, reach the function of mixed light variable color.
A kind of light-emitting diode assembly of the present invention, use chip time carrier directly to dispel the heat, save traditional design and under inferior carrier, re-use hot terminal member or metallic support heat radiation, can effectively reduce whole height,, can directly connect wire support in the mode of welding simultaneously because time carrier is provided with circuit, save bonding wire craft, all can significantly improve aspect manufacturing cost or the production reliability, it has the characteristic of low thermal resistance, takes into account the simplicity and the high reliability of technology simultaneously.Because the characteristic of its low thermal resistance, this light-emitting diode assembly can be used in high-power condition, to use electric current to be promoted to 350mA or higher by traditional 20mA, also because the simplicity of its technology can reduce material and manufacturing cost, again because its high-reliability, applicable to the application that reliability is had harsh requirement such as automobile, aircraft or large scale backlight, also can be applicable to the more environment and the Pb-free solder technology of high temperature.
Description of drawings
Below in conjunction with drawings and Examples the present invention is further described:
Fig. 1 is perforation (through hole) support rack type light-emitting diode structure schematic diagram;
Fig. 2 is the structural representation of printed circuit board surface adhesion type LED;
Fig. 3, Fig. 4 are respectively two kinds of existing low thermal resisting LED structural representations;
Fig. 5 is equipped with the decomposing schematic representation of optical lens embodiment for the present invention;
Fig. 6 is equipped with the combination schematic diagram of optical lens embodiment for the present invention;
Fig. 7 is the structural representation of low thermal resisting LED embodiment of the present invention;
The vertical view of Fig. 8 a plurality of light-emitting diode chip for backlight unit embodiment for the present invention is equipped with;
The end view of Fig. 9 a plurality of light-emitting diode chip for backlight unit embodiment for the present invention is equipped with;
Figure 10 is provided with the structural representation of electrostatic protection circuit embodiment for the present invention.
Among the figure, 10. light-emitting diode chip for backlight unit; 11. conductive metal frames; 12. epoxy resin; 13. printed substrate; 14. gold thread or aluminum steel; 15. plastic insulation; 16. hot terminal member; 17. inferior carrier; 18. the positive pole of support; 19. the negative pole of support; 21. silica gel; 22. optical lens; 23. a pair of back-to-back Zener diode.
Embodiment
Fig. 5, Figure 6 shows that one embodiment of the invention, it is split up into positive wire support 18 and cathode conductor support 19 with die stamping mode with it with a metallic support, use 15 coatings of plastic insulation material and fixing above-mentioned lead frame and form the cave, chamber in ejection formation (injection molding) mode, wherein the back side of positive wire support 18 and cathode conductor support 19 is exposed in the cave, chamber.With epoxide resin material one optical lens 22 is set and on this cave, chamber and with described insulator 15, combines change molding mode (transfer molding), and a groove is arranged at its bottom, so this optical lens 22 can't break away from above or below the cave, chamber with this insulator 15 is chimeric mutually.Light-emitting diode chip for backlight unit 10 places on time carrier 17 that silicon substrate makes to cover crystal type, this time carrier is provided with circuit and is welded in the exposed part of lead frame in the cave, chamber with tin lead welding tin (Pb/Snsolder paste), and light-emitting diode chip for backlight unit is connected with wire support 18,19.With silica gel 21 cover these light-emitting diode chip for backlight unit 10 and be filled in this chip with described optical mirror slip between the space, the low thermal resistance of formation one no bonding wire craft and the light-emitting diode assembly of high-reliability.
Fig. 7 is an another embodiment of the present invention, it is split up into positive wire support 18 and cathode conductor support 19 with die stamping mode with it with a metallic support, use 15 coatings of plastic insulation material and fixing above-mentioned lead frame and form the cave, chamber in ejection formation (injection molding) mode, wherein the back side of positive wire support 18 and cathode conductor support 19 is exposed in the cave, chamber.Light-emitting diode chip for backlight unit 10 places on time carrier 17 that aluminium nitride substrate makes to cover crystal type, this time carrier is provided with circuit and is welded in the exposed part of lead frame in the cave, chamber with scolding tin (solder paste), and light-emitting diode chip for backlight unit is connected with wire support 18,19.Cover this light-emitting diode chip for backlight unit 10 with silica gel 21, then form the low thermal resistance of a no bonding wire craft and the light-emitting diode assembly of high-reliability.
Fig. 8, Fig. 9 are another embodiment of the present invention, it is for to be split up into three positive wire supports 18 and a cathode conductor support 19 with die stamping mode with it with metallic support, use plastic insulation material 15 to coat and fixing above-mentioned lead frame and form the cave, chamber in ejection formation (injectionmolding) mode, the back side of wherein above-mentioned three positive wire supports 18 and cathode conductor support 19 is exposed in the cave, chamber.Be provided with epoxide resin material change molding mode (transfer molding) that an optical lens 22 combine and a groove is arranged at its bottom on this cave, chamber and with above-mentioned insulator 15, thus this optical lens 22 with this insulator 15 is chimeric mutually can't be from disengaging above or below the cave, chamber.Three light-emitting diode chip for backlight unit 10 that can send redness, green and blue light respectively place on the inferior carrier 17 that silicon substrate makes to cover crystal type, this time carrier is provided with circuit and is welded in the exposed part of lead frame in the cave, chamber with scolding tin (solder paste), light-emitting diode chip for backlight unit is connected with wire support 18,19, with silica gel 21 cover these light-emitting diode chip for backlight unit 10 and be filled in this chip with described optical mirror slip between the space, low thermal resistance, the high-reliability of formation one no bonding wire craft and can send RGB and the light-emitting diode assembly of mixed light color.
Figure 10 is an another embodiment of the present invention, it is split up into positive wire support 18 and cathode conductor support 19 with die stamping mode with it with a metallic support, use plastic insulation material 15 to coat and fixing described lead frame and form the cave, chamber in ejection formation (injection molding) mode, the back side of wherein said three positive wire supports 18 and cathode conductor support 19 is exposed in the cave, chamber.Advance molding mode (transfer molding) with commentaries on classics and one optical lens 22 is set on this cave, chamber with epoxide resin material, and combine with described insulator 15 and a groove is arranged at its bottom, so this optical lens 22 can't break away from above or below the cave, chamber with this insulator 15 is chimeric mutually.The light-emitting diode chip for backlight unit 10 and a pair of back-to-back Zener diode 23 that can send blue light, place on time carrier 17 that aluminium base makes with the elargol adhesive means, and time carrier of light-emitting diode chip for backlight unit 10 and Zener diode 23 and this aluminium base being made with bonding wire 14 17 is connected, and wherein said a pair of back-to-back Zener diode 23 is in parallel with described light-emitting diode chip for backlight unit 10.The inferior carrier 17 that this aluminium base is made is actually a kind of metal base printed substrate (MCPCB; metal core printing circuit board); and this metal base printed substrate is welded in the exposed part of lead frame in the cave, chamber with scolding tin; light-emitting diode chip for backlight unit is connected with wire support 18,19; cover these light-emitting diode chip for backlight unit 10 with silica gel 21 again and be filled in this chip and above-mentioned optical mirror slip between the space, then form a low thermal resistance, high-reliability and have the light-emitting diode assembly of electrostatic protection device.
Claims (9)
1. a light-emitting diode assembly is characterized in that, comprising:
Conductive metal frames, this lead frame are spaced apart mutual disjunct positive wire frame and cathode lead frame;
Insulating material coating described conductive metal frames, and form cave, a chamber, and the back portion of described conductive metal frames exposes in the cave, chamber;
Single or multiple light-emitting diode chip for backlight unit place on the inferior carrier to cover crystal type, and this time carrier surface is provided with circuit, and described light-emitting diode chip for backlight unit is connected with conductive metal frames, and this time carrier is connected with conductive metal frames with welding or adhesive means;
On light-emitting diode chip for backlight unit coated with refractive index greater than 1.3, light transmission is higher than 80% translucent material and coating chip.
2. a kind of light-emitting diode assembly according to claim 1 is characterized in that, also comprises optical lens, described optical lens with ejection formation, change moulding or other molding mode and be arranged on top, cave, chamber and combine with described insulator; Described translucent material is filled between light-emitting diode chip for backlight unit and optical lens.
3. a kind of light-emitting diode assembly according to claim 1 is characterized in that, single or multiple light-emitting diode chip for backlight unit, and the material that is higher than 1W/m-K with the coefficient of heat conduction is attached on time carrier.
4. a kind of light-emitting diode assembly according to claim 1 is characterized in that, the substrate material of the inferior carrier of carries chips can be silicon, metal, metal alloy, pottery, aluminium nitride or its combination.
5. a kind of light-emitting diode assembly according to claim 1 is characterized in that, greater than 70%, its material can be optical plastic, epoxy resin, glass, silica gel, Teflon or its combination to this optical lens in the light transmission of wavelength 550nm.
6. a kind of light-emitting diode assembly according to claim 1 is characterized in that, the material of the translucent material of this coating chip can be optical plastic, epoxy resin, glass, silica gel or its combination.
7. a kind of light-emitting diode assembly according to claim 1 is characterized in that, this device has a plurality of positive wire framves, or has a plurality of cathode lead frames, or has a plurality of positive wire framves and cathode lead frame simultaneously.
8. a kind of light-emitting diode assembly according to claim 1 is characterized in that, this device has the carrier carries chips a plurality of times.
9. a kind of light-emitting diode assembly according to claim 1 is characterized in that, is provided with the electrostatic protection circuit in this device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005100264424A CN1874011A (en) | 2005-06-03 | 2005-06-03 | LED device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005100264424A CN1874011A (en) | 2005-06-03 | 2005-06-03 | LED device |
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| Publication Number | Publication Date |
|---|---|
| CN1874011A true CN1874011A (en) | 2006-12-06 |
Family
ID=37484367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005100264424A Pending CN1874011A (en) | 2005-06-03 | 2005-06-03 | LED device |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8564004B2 (en) | 2011-11-29 | 2013-10-22 | Cree, Inc. | Complex primary optics with intermediate elements |
| US8669572B2 (en) | 2005-06-10 | 2014-03-11 | Cree, Inc. | Power lamp package |
| US8735920B2 (en) | 2006-07-31 | 2014-05-27 | Cree, Inc. | Light emitting diode package with optical element |
| US8748915B2 (en) | 2006-04-24 | 2014-06-10 | Cree Hong Kong Limited | Emitter package with angled or vertical LED |
| US8791471B2 (en) | 2008-11-07 | 2014-07-29 | Cree Hong Kong Limited | Multi-chip light emitting diode modules |
| US8866169B2 (en) | 2007-10-31 | 2014-10-21 | Cree, Inc. | LED package with increased feature sizes |
| US9035439B2 (en) | 2006-03-28 | 2015-05-19 | Cree Huizhou Solid State Lighting Company Limited | Apparatus, system and method for use in mounting electronic elements |
| CN104637912A (en) * | 2013-11-11 | 2015-05-20 | 英飞凌科技股份有限公司 | Electrically conductive frame on substrate for accommodating electronic chips |
| US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
| US9601670B2 (en) | 2014-07-11 | 2017-03-21 | Cree, Inc. | Method to form primary optic with variable shapes and/or geometries without a substrate |
| US9722158B2 (en) | 2009-01-14 | 2017-08-01 | Cree Huizhou Solid State Lighting Company Limited | Aligned multiple emitter package |
| US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
| US10622522B2 (en) | 2014-09-05 | 2020-04-14 | Theodore Lowes | LED packages with chips having insulated surfaces |
| CN111739844A (en) * | 2020-08-06 | 2020-10-02 | 深圳市汇顶科技股份有限公司 | Chip, chip packaging method and electronic equipment |
-
2005
- 2005-06-03 CN CNA2005100264424A patent/CN1874011A/en active Pending
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8669572B2 (en) | 2005-06-10 | 2014-03-11 | Cree, Inc. | Power lamp package |
| US9035439B2 (en) | 2006-03-28 | 2015-05-19 | Cree Huizhou Solid State Lighting Company Limited | Apparatus, system and method for use in mounting electronic elements |
| US8748915B2 (en) | 2006-04-24 | 2014-06-10 | Cree Hong Kong Limited | Emitter package with angled or vertical LED |
| US8735920B2 (en) | 2006-07-31 | 2014-05-27 | Cree, Inc. | Light emitting diode package with optical element |
| US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
| US11791442B2 (en) | 2007-10-31 | 2023-10-17 | Creeled, Inc. | Light emitting diode package and method for fabricating same |
| US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
| US10892383B2 (en) | 2007-10-31 | 2021-01-12 | Cree, Inc. | Light emitting diode package and method for fabricating same |
| US8866169B2 (en) | 2007-10-31 | 2014-10-21 | Cree, Inc. | LED package with increased feature sizes |
| US8791471B2 (en) | 2008-11-07 | 2014-07-29 | Cree Hong Kong Limited | Multi-chip light emitting diode modules |
| US9722158B2 (en) | 2009-01-14 | 2017-08-01 | Cree Huizhou Solid State Lighting Company Limited | Aligned multiple emitter package |
| US8564004B2 (en) | 2011-11-29 | 2013-10-22 | Cree, Inc. | Complex primary optics with intermediate elements |
| CN104637912B (en) * | 2013-11-11 | 2017-10-17 | 英飞凌科技股份有限公司 | Conductive pane on the substrate for accommodating electronic chip |
| CN104637912A (en) * | 2013-11-11 | 2015-05-20 | 英飞凌科技股份有限公司 | Electrically conductive frame on substrate for accommodating electronic chips |
| US9601670B2 (en) | 2014-07-11 | 2017-03-21 | Cree, Inc. | Method to form primary optic with variable shapes and/or geometries without a substrate |
| US10622522B2 (en) | 2014-09-05 | 2020-04-14 | Theodore Lowes | LED packages with chips having insulated surfaces |
| CN111739844A (en) * | 2020-08-06 | 2020-10-02 | 深圳市汇顶科技股份有限公司 | Chip, chip packaging method and electronic equipment |
| CN111739844B (en) * | 2020-08-06 | 2021-01-29 | 深圳市汇顶科技股份有限公司 | Chip, chip packaging method and electronic equipment |
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