CN1916603B - 用于角分解光谱光刻表征的方法与设备 - Google Patents
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Abstract
一种通过在一高数值孔径透镜的光瞳面中测量一角分解光谱从而确定基底特性的设备与方法,所述角分解光谱是由反射离开所述基底的辐射形成的。所述特性可依角度和波长而变化,并可包括横向磁和横向电偏振光的强度及其相对相位差。
Description
技术领域
本发明涉及一种可以在例如借助光刻技术的器件制造过程中使用的检验方法,并涉及利用光刻技术制造器件的方法.
背景技术
在使用光刻投影设备的制造工艺中,通过改变辐射敏感材料(抗蚀剂)的光学特性或表面物理特性,将(例如在掩模中的)图案成像在至少部分由一层所述辐射敏感材料(抗蚀剂)覆盖的基底上.可选地,该成像步骤可使用一个无抗蚀剂工艺,例如蚀刻光栅或纳米印记技术。在此成像步骤之前,可以对该基底进行各种处理,例如涂底漆、涂覆抗蚀剂和软烘烤.曝光后,可对该基底进行其它的处理,例如曝光后烘烤(PEB)、显影、硬烘烤,以及测量/检验成像特征.以这一系列工艺为基础,对例如I C的器件的单层形成图案.然后,对该图案层可进行各种处理,例如蚀刻、离子注入(掺杂)、金属喷镀、氧化、化学-机械抛光等等完成一单层所需的所有处理.如果需要多层,则必须对每个新层重复全部步骤或其变化.最终,在基底(晶片)上将出现器件阵列.然后,采用例如切割或锯断的技术将这些器件彼此分离,由此,单个器件可安装到载体上、与管脚连接等.
在抗蚀剂(或在刻蚀情况下的基底表面)显影之后,因为测量并检验的步骤是在基底产品加工的正常过程中实施的,所以一般称为在线,其通常有两个目的.首先,期望检测已显影抗蚀剂中图案有缺陷的任何靶部区域。如果有足够数量的靶部区域有缺陷,基底上带有图案的抗蚀剂会被剥离并重新曝光,在好的情况中是可以被正确地重新曝光,而不是用带有缺陷的图案实施例如蚀刻的加工步骤而造成永久缺陷。其次,该测量可允许检测并纠正光刻设备中的错误,例如照射设置或照射剂量,以用于后续曝光中.然而,光刻设备中的大量错误不能被轻易地从印制在抗蚀剂中的图案里检测出来或量化.检测到一个缺陷并不总能直接找出其原因。这样,已知有多种用于在光刻设备中检测和测量错误的离线工序。这些工序可包括以一测量装置代替基底,或进行专用测试图案的曝光,例如在多种不同的机器设置下进行.这种离线技术经常耗用相当长的时间,在此过程中,直到获得测量结果之前,该设备的最终产品的质量将是未知的。因而,通常优选在线技术,可在产品曝光的同时实施该技术,用于检测和测量光刻设备中的错误.
散射测量是可用于在线测量CD或重叠量的光学度量技术的一个实例。有两种主要的散射测量技术:
(1)光谱散射测量通常利用宽波段光源,例如氙、氘或基于囱素的光源,例如氙孤灯,测量固定角度的散射光的性质(作为波长的函数)。该固定角度可为垂直入射或倾斜入射.
(2)角分解散射测量通常利用激光作为单一波长光源,测量固定波长的、作为入射角的函数的散射光的性质.
例如,利用实时回归或者通过与由模拟得到的图案库进行比较,重建产生反射光谱的结构.重建包括成本函数的最小化。两种方法都通过周期性结构计算光的散射。最常用的技术为严格耦合波分析(RCWA),尽管光散射还可通过其它技术,例如有限差分时域(FDTD)或积分方程技术来计算.
已知的角分解散射测量技术存在的一个问题是,它们每次仅检测一个波长,因而具有多于一个波长的光谱必须使那些波长时分复用,这增加了检测和处理该光谱所需的总采集时间.在光谱散射测量中,使用一个具有较大扩展度的扩展光源.由于小光栅必须以入射角的较小发散来照射,因此来自该扩展光源的大量光被浪费掉。这造成在检测器上较低的亮度级,这会导致较长的采集时间,并对生产能力有负面影响.如果选择较短的采集时间,测量结果可能不稳定.
发明内容
因此,例如提供一种方法,用于在利用光刻技术制造器件的过程中测量重叠量和光栅形状参数(例如光栅非对称性和对齐度),以及在高NA(数值孔径)透镜的光瞳面(或后焦面)中测量角分解光谱,将是很有利的.投影系统像差等也可被测量,以便被纠正或补偿.
本发明的实施例可包括硬件,该硬件能够同时测量多个波长的角分解光谱,能够实施浸入式散射测量和用于角分解散射仪的焦点测量方法,并能够测量二维检测器阵列辐射源的强度噪音.此外,本发明的实施例可包括该硬件的应用,包括通过测量散射光的非对称性来测量重叠量,以及通过散射光的瑞利畸变和高衍射级来测量小的线形改变。
尽管在本文中本发明的装置具体用于制造IC,但应明确地理解,这样的设备具有许多其它可能的用途.例如,它可被用于制造集成光学系统、用于磁畴存储器、液晶显示板、薄膜磁头等的引导和检测图案等。本领域的技术人员将理解,在这种可替换的用途范围中,本文中的术语“分划板”、“晶片”或“管芯”的任何使用应认为分别可以用更通用的术语“掩模”、“基底”和“靶部”来代替.
在本文件中,使用的术语“辐射”和“光束”包括所有类型的电磁辐射,包括紫外辐射(例如具有365、248、193、157或者126nm的波长)和EUV(极远紫外辐射,例如具有5-20nm的波长范围),和粒子束,如离子束或者电子束。
附图说明
现将参照所附示意图,仅以示例方式,描述本发明的实施例,其中相应的参考标记表示相应的部件,并且其中:
图1描述了一个光刻投影设备,该设备可用于实施一种根据本发明一个实施例的方法;
图2描述了一个散射仪;
图3描述了根据本发明一个实施例,在一个高NA透镜的光瞳面中测量一角分解光谱的总体工作原理;
图4a和4b描述了本发明一个实施例在确定重叠量中的应用;
图5描述了根据本发明一个实施例,一个非偏振光束分离器用于分离一部分辐射束的应用.
图6描述了根据本发明一个实施例的一个波长复用器;
图7描述了根据本发明一个实施例的一个波长解复用器;
图8描述了根据本发明一个实施例的一个中间物平面处的锐缘;
图9a和9b描述了根据本发明一个实施例在一检验光束中具有一形状的遮拦物;
图10描述了根据本发明一个实施例的散射光谱不同衍射级的检测图像;
图11描述了根据本发明一个实施例,具有两个照射光斑的一个散射仪;
图12描述了根据本发明一个实施例的一个椭圆偏振计;
图13描述了根据本发明一个实施例,用于在先瞳面和像平面中检测图像的一个散射仪;并且
图14描述了两倍于光栅节距的光栅重叠量.
具体实施方式
图1示意性地描述了一个光刻投影设备,该设备可用于一种根据本发明一个实施例的方法中.该设备包括:
·一个辐射系统Ex、IL,用于提供一个辐射(例如DUV辐射)投影束PB,在这种具体例子中,该系统还包括一个辐射源LA;
·第一载物台(掩模台)MT,该载物台配备有用于保持掩模MA(例如分划板)的掩模保持器,并与用于将该掩模相对于物体PL精确定位的第一定位装置连接。
·第二载物台(基底台)WT,该载物台配备有用于保持基底W(例如涂有抗蚀剂的硅晶片)的基底保持器,并与用于将基底相对于物体PL精确定位的第二定位装置PW连接.
投影系统(“投影透镜”)PL(例如折射透镜系统),用于将掩模MA的辐射部分成像到基底W的靶部C(例如包括一个或多个管芯)上。
如这里所述,该设备为透射型(例如具有透射掩模).然而,一般而言,它也可为例如反射型(例如具有反射掩模).可选地,该设备可采用另一类构图装置,例如以上所提到的程控反射镜阵列型.
该光源LA(例如一受激准分子激光器)产生一辐射光束.该光束直接地或穿过诸如扩束器Ex的调节装置之后,被照射到射系统(照射器)IL中。该照射器IL可包括调节装置AM,用于设定光束强度分布的外和/或内径向范围(通常分别被称为σ-外和σ-内)。此外,它通常将包括各种其它部件,例如积分器IN和聚光器CO.以此方式,入射到掩模MA上的光束PB在其横截面上具有理想的均匀性和强度分布.
关于图1,应指出的是,辐射源LA可位于光刻投影设备外壳之内(例如当辐射源LA是汞灯时经常是这种情况),但它也可远离该光刻投影设备,而它产生的辐射光束被引导入该设备中(例如借助于合适的定向反射镜);在辐射源LA为一受激准分子激光器时通常是后面的那种情况。本发明和权利要求包括这两种方案.
接下来,光束PB与被保持在掩模台MT上的掩模MA相交.穿过掩模MA后,该光束PB穿过投影透镜PL,该投影透镜PL将光束PB聚焦到基底W的靶部C上。借助于第二定位装置(以及干涉测量装置IF),可精确地移动基底台WT,例如,在光束PB的光路中定位不同的靶部C.类似地,例如,在从掩模库机械地提取掩模MA之后,或在扫描过程中,可以使用第一定位装置将掩模MA相对光束PB的光路进行精确定位.通常,载物台MT、WT的移动将借助于一个长行程模块(粗定位)和一个短行程模块(精定位)来实现,它们在图1中未明确示出.然而,在晶片步进器中(与步进扫描装置相反),该掩模台MT可仅被连接到一个短行程致动器,或可被固定。
上述设备可用在两种不同的模式中:
1.在步进模式中,该掩模台MT基本保持不动,整个掩模图像被一次投射(即单“闪”)到靶部C上.然后,基底台WT被沿X和/或Y方向移动,以使不同的靶部C能够由光束PB辐射;
2.在扫描模式中,除了给定靶部C没有暴露在单“闪”中以外,实施基本上相同的方案.取而代之的是,该掩模台MT可沿一给定方向(所谓的“扫描方向”,例如Y方向)以速度v移动,以使投影光束PB在整个掩模图像上扫描;同时,基底台WT同时沿相同或相反方向以速度V=Mv移动,其中M为该投影系统PL的放大率(典型地,M=1/4或1/5).以此方式,可曝光相当大的靶部C,而不必在分辩率上作出牺牲。
利用如图2所示的散射仪,可确定基底6表面的一个或更多特性.在一个实施例中,该散射仪包括一个宽频带(白光)辐射源2,其将辐射引导到基底6上.可配置一个扩展的宽频带辐射源,以提供具有至少50nm波长的辐射光束到该基底表面上.反射辐射被传递到光谱仪检测器4,其测量镜面反射辐射的光谱10(强度为波长的函数).根据此数据,可重建产生该检测光谱的结构或分布,例如通过严格耦合波分析和非线性回归,或通过与如图2底部所示模拟光谱库相比较.通常,对于重建,该结构的一般形式是已知的,某些参数是根据赖以形成该结构的工艺的知识来假定的,仅剩下几个要根据散射测量数据来确定的参数。
该散射仪可为一个垂直入射散射仪或一个倾斜入射散射仪.也可使用散射仪的变型,其中是以单波长的一个角度范围中测得该反射的,而不是以一个波长范围的单角度下测得该反射的.
在下述一个或多个实施例中,使用一个散射仪,其被通过在一个高NA透镜的光瞳面40中测量一个从基底表面6以多个角度和波长反射的角分解光谱的特性,来测量一个基底的特性,如图3中所示.该散射仪包括一个用于将辐射投影到该基底上的辐射源2,和一个用于检测反射光谱的检测器32.光瞳面是这样一个平面:其中辐射的径向位置确定了入射角,且角度位置确定了辐射的方位角以及任何基本上共轭的面。检测器32被放置在该高NA透镜的光瞳面中.该NA很高,且在一实施例中,为至少0.9或至少0.95.浸入式散射仪甚至可具有NA大于1的透镜。
先前的角分解散射仪仅测量了散射光的强度.本发明一个实施例允许在一个角度范围中同时测量多个波长.由该散射仪以不同波长和角度测得的特性可包括横向磁(TM)和横向电(TE)偏振光的强度,以及TM和TE偏振光之间的相位差.
可使用一宽频带光源(即,具有宽范围光频率或波长-因而具有不同颜色的光源),其提供一较大的扩展度,允许多个波长的混合.在一个实施例中,该宽频带光中的多个波长,每个波长具有例如σλ的带宽,并且因而具有一个至少2σλ(即两倍于波长)的间距.多个辐射“源”可以是由例如各光纤束分束的延伸辐射源的不同部分.以此方式,可并行地在多个波长测量角分解散射光谱.可测得三维光谱(波长和两个不同角度),其含有比二维光谱更多的信息.它允许测得更多信息,这将增加度量工序的可靠性.
图3中示出了本发明一实施例的一个散射仪.光源2利用透镜系统L2,通过干涉滤光片30聚焦,并经由显微物镜L1聚焦到基底6上.然后该辐射经过部分反射表面34反射到位于后投影光瞳面40上的一个CCD检测器中,以检测该散射光谱。光瞳面40位于透镜系统L1的焦距处。在该光瞳面上放置有一检测器和高NA透镜。该光瞳面可由辅助光学元件重新成像,这是由于高NA透镜的光瞳面通常位于该透镜之内。
该反射器光的光瞳面以例如40毫秒/帧的积分时间被成像到CCD检测器上。以此方式,该基底靶部的二维角散射光谱成像到该检测器上。该检测器可为例如CCD检测器或CMOS检测器的阵列.该光谱的处理给出一个对称检测配置,因而可使传感器旋转对称地布置.它允许使用一个紧凑基底台,这是因为基底上的靶部可在相对于该传感器的任何旋转方位上被测量.通过该基底平移和旋转的结合,该基底上的所有靶部都可被测量到.
可提供一套干涉滤光片30,以在例如405-790nm,或甚至更低,例如200-300nm的范围内选择一个感兴趣的波长.该干涉滤光片可为可调的,而非包括一套不同的滤光片.可用一光栅取代一个或更多干涉滤光片.
该基底6(或甚至反射表面34)可为一光栅.可印刷该光栅,以使在显影后,由实心抗蚀剂线形成一系列条带.可选地,这些条带可被蚀刻入基底中。该图案对于光刻投影设备,特别是投影系统PL中的彗差以及照射对称性很敏感,这些像差的存在将体现在所印制光栅的变化中.相应地,所印制光栅的散射测量数据被用于重建光栅.根据印制步骤和/或其它散射测量步骤的知识,该光栅的一个或更多参数,例如线宽和形状,可被输入到重建步骤中.
在具有矩形狭缝的透射金属光栅中,复光子能带结构(CPBS)表现出很强的不连续性,其位于伍德-瑞利畸变上,并显示出两种谐振,分别被称为水平和垂直表面等离子谐振.对于水平和垂直谐振,均可直接从CPBS中提取光谱中各峰的光谱位置和波峰宽度.以此方式,可使离开透射金属光栅的辐射得到光谱分析,且该光栅的一个或更多特性可由位于伍德-瑞利畸变上的强烈不连续性来确定.伍德-瑞利畸变根据波长或入射角的偏差而发生,产生一个附加传播衍射级.光束宽度越大,则该光束的横向位移越大.
本发明的一个实施例检测该光谱,并产生一个对称的光瞳面图像,由此可测得这种不连续性,并可计算出一个或更多光栅特性.
根据本发明的一实施例,该散射仪可适于通过在反射光谱中测量不对称性,来测量两个未对齐的周期性结构的重叠量,该不对称性与重叠量的程度有关.
在一个实施例中,该散射仪适于通过在反射光谱和/或检测结构中测量不对称性,来测量两个未对齐的光栅或周期性结构的重叠量,该不对称性与重叠量的程度有关.由于对称的检测结构,可清楚地辨别出任何不对称性.这为测量光栅中的未对齐性提供了一个直接的方法。
所使用的一种基底图案示于图4中.光栅14之上印制有第二光栅12。光栅12相对于光栅14偏移的量称为重叠量22.
注意在图4a所示的实施例中,辐射源2相对于表面法线对称地照射目标,并且散射测量检测器从多个角度测量散射辐射,尽管光源也可能从一个倾斜角度照射该目标.
重叠量的度量是基于角散射光谱中不对称性的测量.对称结构产生对称的角光谱,而目标中的不对称性在角散射光谱中显示为不对称性。这个特性是利用角分解散射测量法来度量重叠量的基础.
由具有宽度20的条带所形成的两个互相重叠但来对齐的光栅12和14形成一个复合的非对称目标.用图3中所示的角分解散射仪4检测角散射光谱中产生的不对称性,并用于按照如下方法推导重叠量22:
采用两对光栅,在第一和第二对光栅中分别具有人为偏差+d和-d。换句话说,在其中一对中,光栅12沿一个方向移动(如图4中所示),而在另一对中(未示出),光栅12沿相反方向移动。因而在每对中,光栅之间的实际横向偏移为X1=OV+d和X2=OV-d,OV为重叠量22。
当光栅对被对齐时,重叠量为0,如果入射到光栅上的照射强度为Iill,且沿第一方向反射离开光栅的辐射强度为I+1,在同一平面中沿相反方向反射离开光栅的辐射强度为I-1,当重叠量OV=0时,
I+1=I-1. (1)
然而,如果
OV≠0,
I+1≠I-1. (2)
对于一个较小的重叠量,强度差与重叠量成比例:
I+1-I-1=K×OV. (3)
K为一个常数,且依工艺而定,因而是未知的.
为了利用根据本发明一实施例的散射仪来校准重叠量的度量,使用两个光栅目标;其中一个具有如图4b中所示的重叠量,而另一个具有正好相反的重叠量,从而上光栅12相对于下光栅14向左偏移,而非向右偏移。第一种配置中,重叠量为OV+d(在图4b中为距离22),而在第二种配置中,重叠量为OV-d.
所以,对于
OV+d,
不对称性
A+=K(OV+d) (4)
而对于
OV-d,
不对称性
A.=K(OV-d). (5)
比例系数K可被消去:
因此,可利用角分解散射光谱中不对称性的测量值来计算重叠量。
与先前已知方法相比,本方法的一个优点是:事实上仅需要两个光栅.而且,在原理上,该方法还可适用于二维光栅:在此情况下,对于一个完整的(x,y)重叠量测量来说,仅需要两个光栅.这与光谱散射测量法使用的例如6个光栅相比,是显著的改进.
利用二维光栅进行xy重叠量度量的分析如下:
两个光栅具有振幅透射率f(x,y)和g(x,y).这些光栅在两个方向上为周期性的,因而它们的透射率可记作傅立叶级数:
(7)
两个光栅均具有相等的周期,为了下述计算简便起见,两先栅的周期已被统一为2π.该系数Fn,m和Gp,q可被解释为取决于光栅形状、波长和偏振态的衍射效率.这两个光栅分别沿x和y方向以相对重叠量x0和y0相互重叠.总透射率t可写成:
其中:
可如下调整变量:
将这些表达式代入t(x,y)的傅立叶级数,得出:
其中:
Ta,b可被解释为衍射级(a,b)的振幅。可以看出,该振幅通常依赖于沿x和y方向的重叠量.
为简便起见,仅考虑沿x方向作用的衍射级.下述分析也可对沿y方向的衍射级进行.这仅需变量调整.
对于作用在x方向上的衍射级,b=0,所以对于两个衍射级a和-a的振幅:
(12)
假设两个光栅均沿x方向对称:
F-n,m=Fn,m
G-n,m=Gn,m (14)
利用该特性,得到衍射振幅:
(15)
该散射仪测量该衍射场的强度,得到:
I±n,0=|T±a,0|2 (16)
对此表达式的计算显示出强度可被写成以下形式:
其中振幅Bn,m和相位εn,m取决于光栅形状、照射波长和照射偏振态.取+1和-1级之差,得到作用在x方向上的不对称性Ax:
实际上重叠量与光栅节距相比很小.例如,节距经常约为1μm,而最大重叠量约为60nm。因此,以上表达式可被线性化,且仅保留x0和y0的线性项:
其中
可以看出,存在一个耦合项:沿x方向的不对称性通过耦合项Kxy,也是y重叠量的函数。如果该二维光栅具有90°旋转对称性,且如果光以45°偏振,则我们可以写出沿x和y方向的不对称性:
Ax=x0K0+Kxyx0y0
(21)
Ay=y0K0+Kxyx0y0
这些方程是利用两对二维光栅进行xy重叠量度量的基础.在第一对光栅中,在上光栅中引入一个偏差+d,而在第二对光栅中引入一个偏差-d。在x和y方向上都施加该偏差.现在可测得四个不对称项:在第一对光栅中的x和y不对称性,以及在第二对光栅中的x和y不对称性,如下所示:
A1x=K0(OVx+d)+Kxy(OVy+d)(OVx+d)
A1y=K0(OVy+d)+Kxy(OVy+d)(OVx+d)
(22)
A2x=K0(OVx-d)+Kxy(OVy-d)(OVx+d)
A2y=K0(OVy-d)+Kxy(OVy-d)(OVx-d)
这给出了具有四个未知量K0,Kxy,OVx和OVy的四个非线性方程,可求解之,以给出重叠量.
在一个实施例中,可为散射仪配备一个或更多光圈,以在产生光栅图案时模仿光刻曝光条件.然后该光圈可被用于利用该散射仪来产生该光栅图案的角分解光谱图像.
在一个实施例中,可将基底和检测器之间的至少一部分空间的浸入到液体中,具体来说,如图3中所示的透镜L1和基底6之间的空间.该液体可为水.这将具有增加基底6和透镜L1之间介质的空间带宽的优点。这意味着一个例如在空气中容易消散的衍射能够传播并被透镜捕捉。因而,借助于该空间的沉浸,将可能检测到更高的衍射级,该更高的衍射级包含有比在该空间具有例如空气的情况下更详细的关于待调查光栅的信息.
该散射仪的数值孔径(NA)优选地为至少0.9,甚至0.95或大于1。
使L1和目标之间的空间沉浸在高折射率的液体中,将增加该介质的空间带宽,并允许更小节距的更高衍射级的传播.产生使第一级光谱传播的最小节距为假设NA等于1.3,且λ等于400nm,这产生154nm的最小节距.这对应于大约为20-80nm的临界尺寸(CD)或重建光栅宽度.当观察例如图2中所示的分布图时,临界尺寸为峰的平均宽度,而节距是从一个峰到另一个峰的距离.
沉浸液体相对于例如基底6上的抗蚀剂应具有较大的折射率阶梯。这可允许在检测器图像中有最大反差.满足这种要求的一种可能的液体为水。
图5根据本发明的一个实施例,示出了使用同一个检测器来监视源输出强度和散射辐射的强度,这避免了同步问题,并允许对源输出改变的实时补偿。
该散射仪可包括一个非偏振光束分离器和一个倾斜反射镜,用于分离一部分从辐射源发出的辐射束,以利用同一检测器进行单独测量。在一个实施例中,该部分辐射束被用于测量辐射束的强度,而该散射仪可适于补偿该辐射束强度的波动.对于并排的强度测量光束和主测量光束使用同一CCD检测器,其优点是不需要额外的检测器,于是在基准传感器和度量传感器之间不存在光学和热学特性差异;不需要额外的电子装置来触发、读出和存储基准信号.可测量并补偿任何强度改变。
辐射路径中的非偏振光束分离器50将散射辐射成像到二维检测器32上。附加透镜将光瞳面再成像到CCD检测器上.入射到该检测器上的强度被表示为图像36.非偏振光束分离器50还分离出一部分辐射束,以利用它监视强度噪音。取代利用一独立检测器测量该辐射部分,该光利用倾斜反射镜52向回反射,并传输到同一检测器32的一个单独部分。一个可选的光瞳光阑54限制了该辐射部分的范围,且该反射镜倾角保证了该辐射部分与主辐射束并排地被投影。该光谱被成像到L1的光瞳面处的检测器32上。
在先前的方法中,角分解散射测量是以单一波长进行的.不同波长下的测量将被按顺序进行,而不同的波长将被时分复用.然而,时分复用会降低光吞吐量。
在一个实施例中,散射仪包括在辐射源和基底之间的波长复用器,和在基底和检测器之间的解复用器.这允许同时测量多个不同的波长(或颜色),在更短的时帧内提供更多的信息以及提供如上所述的可靠性。该波长复用器可包括一个放置在背投影物平面处的色散元件,或一个放置在光瞳面处的色散元件.
该辐射源的表面区域优选地被分割成N部分,每个部分都耦合到一个波长复用器,其中N为离散波长的个数.该分割可用光纤束等完成。
在一个实施例中,该复用器包括一个放置在背投影物平面处的色散元件。该色散元件可为一个光栅或棱镜,其适于接纳N个离散波长,每个波长具有σλ的带宽和至少两倍于带宽的间距,即2σλ.这可使延伸光源的利用最大化.不同波长的测量再也不必进行时分复用,这是由于其可在同一时间内完成,所以其一个主要的优点是增加了吞吐量。
在一个实施例中,该解复用器包括一个放置在光瞳面处的色散元件。一个或更多光楔可被插入到物平面中,以在光瞳面中获得轮廓分明的角分解光谱的分离。
在一个实施例中,使用一个诸如氙、氘或囱钨石英光源的延伸宽频带辐射源。这些光源具有较大扩展度,其提供一个可将波长分割成各离散波长的表面区域,并提供更多如上所述的信息.该波长可在193至800nm的范围内.
在一个实施例中,在照射支路(或在图2中介于源2和基底6之间的辐射路径)中使用一个同时具有N个离散波长的色散棱镜或光栅,并在检测支路(或介于基底6和检测器4之间的辐射路径中的空间)中使用一个光栅或棱镜,以在空间上分离该波长.
图6中示出了一个复用光栅的例子.两个光源S1和S2的光透射通过一个透镜系统L2,入射在一个位于物平面42中的利特罗安装的光栅16上,并被聚焦到光瞳面40上,然后,经过一个透镜系统L1传输到另一个物平面42上,并可选地传入一个照射光纤60中。该光瞳面包含有合适尺寸的矩形光圈,矩形的宽度确定了入射到该光栅上的光的角度范围。该角度范围和光栅节距确定了经由光瞳面中光圈传输的返回光的带宽.例如,一个具有1200线/毫米的光栅产生大约为1.2mrad/nm的色散。一个4nm的有效带宽对应于3.33mrad的照射光束的全角宽度.基底6的光斑尺寸大约为40μm,其NA为0.95。因而光栅上的光束直径大约为23mm。如果透镜L1的焦距为100mm,则光瞳面中光圈孔的宽度必须为333μm.如果使用一个照射光纤,则照射NA必须大约为0.22.
显然,可一次使用多于两个的辐射源(具有不同波长).
图7示出了一个位于检测支路中的波长解复用器的例子。为简明起见,再次仅示出了两个波长的分离.除了光栅放置在光瞳面而不是在物平面上以外,该解复用器与复用器相似.由利特罗安装的光栅16中的光栅衍射的光透射过透镜L2,使具有波长λ1和λ2的两个物像位于物平面中。该面可包含具有n个孔(在本例中n=2)的视场光阑,它们应足够宽,以避免空间滤光,从而避免干扰光谱.该视场光阑40的每个孔还具有一个有着特定楔角的光楔62.该楔62保证了对于每个波长的角分解散射光谱被成像到CCD检测器32的不同部分上.该CCD检测器位于第二光瞳面40上.
由于光楔62可沿两个方向偏转光,因此可能实现用许多角分解光谱有效地填充CCD检测器.
为了获得可再现的结果,该目标应被很好地聚焦.为了达到此目的,根据本发明的一个实施例,如图8所示,高NA物镜的光瞳面40被一个双远心系统成像到检测器上.在所有实施例中,NA都很高;优选地至少为0.9。
中间物平面42中的锐缘70阻挡了中间物像的一半.该锐缘可为一傅科锐缘。
该锐缘协助将辐射像聚焦到基底上.对于每个方位,光瞳面40的外区(在实际中是两半)中的强度被取样.在散焦情况下,产生强度I1和I2之差。给出焦距F为:
比例系数k不依赖于图像,并仅需一次性确定,尽管由于聚焦传感器可被用于一个积分反馈回路中,但k的精确值并不重要.
照射源并不总是均匀的,且必须被校准和纠正,以保证基底的精确曝光.不均匀性可由照射源本身造成,或由照射路径中反射器表面涂层的粗糙度造成.以前曾经用铝反射镜完成照射光束的标准化.然而,当待测目标(即光栅或基底)产生更高衍射级时,该标准化失败.这些造成在重叠量应用中由工具诱发的移位误差.
因而,在一个实施例中,该散射测量系统还包括一个或更多位于照射光束中的反射镜.更具体地说,这些反射镜可为一个基底台上的基准(fiducial),且其可由铝制成.这些反射镜倾斜或以不同倾斜角存在,以产生至少两个沿不同角度反射的图像.对于每个倾角,检测光谱沿着与倾斜方向相同的方向偏移.这些图像被检测到并组成微分方程,由此可确定辐射束的照射分布.所产生的照射分布用于校正更高衍射级的反射光谱特性的测量值。
测量信号M0(k)被表示为:
其中:
A(k)为光瞳面中位置k处的未知照射强度;
B(k)为传感器检测支路中的未知光学损失;且
B±N为光栅目标的第N阶衍射效率.
实际上,由于缓慢变化的非均匀照射光束以及照射路径中光学元件和涂层的表面粗糙度,照射强度是变化的.光学涂层的表面粗糙度通常在光瞳面中产生照射光束的颗粒状外观.
基准测量可在一个高反射性铝反射镜上进行,其产生以下测量信号:
MM(k)=A(-k)RM(k)B(k) (25)
用该基准标准化目标的测量,得到:
可以看出,通过该标准化,消除了检测支路中的损失.
然而,仅对于零衍射级(即镜面反射)消除了照射中的非均匀性.更高衍射级保持着以下形式的未知误差项:
为了消除此项,照射分布A(k)必须被校准,如以下所述.
该反射镜可为单个的凸反射镜或凹反射镜,或可为一个在检测过程中在整个角度范围内有效倾斜的平面镜。可选地,可存在一系列具有不同倾角的镜子.测得的反射角可在径向上(这将改变倾斜幅度)或在方位角方向上(这将改变倾斜方向).
现将以一维情况来描述用于确定微分方程的方法.而扩展至二维情况则是很平常的.
测量一个基准反射镜,以得到两个1mrad级别的、很小的、相反的反射镜倾角±θM.作为此倾角的结果,测得的光瞳图像将偏移.因而测得两个略微偏移的图像:
M±θ(k)=A(-k±Δ(k))RM(k)B(k)C(k;±θ) (28)
这里Δ为光瞳面中的偏移,其通常依赖于光瞳面中的位置k.对于一个消球差系统:
方程(28)中的C说明了反射强度的重新分布,对于一个消球差系统:
其中M+θ和M-θ分别为以很小的正倾角和很小的负倾角测得的光谱。
这里,Q的下标‘M’用于强调它与测得的数据有关.对于小倾角,可近似为:
利用此线性化,得到关于Q的微分方程:
容易求解此方程,得到:
以上推导可容易地扩展到二维情况.实际上,测得的数据不是连续的,而是数字化的取样数据。然而,这并不改变以上推导的概念.
实际上,可采用一个平面反射镜,利用致动器机械地倾斜该平面反射镜.一个更精致和简便的方法是采用具有曲率半径R和水平位置x的凹反射镜或凸反射镜.弯曲反射镜的局部高度z描述为:
表面的局部斜率θ与水平位置x线性地成比例:
由于通过将基准移动到检测器之下正确的位置,即可简易地获得正确的倾角,因而位于基底台上的凹形或凸形球面铝基准使校准变得简单明了。本发明的一个实施例在基底的共轭面中使用一个具有环状强度分布的辐射束.为了产生该环状强度分布,辐射源可包括机械叶片、空间光调制器或空间相干宽频带激光器和一个变焦距轴向镜(即为了产生激光环).该环状辐射束优选地包括小-Φ照射.
实施环状辐射比例如插入一个叶片更有利,这是因为几乎所有的光子都被“利用”了,所以没有光损失。这在使用例如UV或DUV光源时特别重要,这是因为它们比那些更丰富的光源发出更少的光子,于是损失大量的那些光子更值得注意.特别地,这在信号收集中更值得注意,这是因为如果有较低的先强度,光刻工具受到一定量的延迟.环状光源还具有不会造成叶片可能造成的内部反射的优点.需要阻止内部反射以避免光伪像。当然,可使用其它照射技术,例如四极照射,其提供同样的优点。
理想地,该环状辐射的环带被放置在高NA透镜的光瞳面中.然而,该光瞳面并未被直接触及,实际上,该环带放置在散射仪照射支路中光瞳面的背投影图像中。环状照射的优点是可单独测量具有λ/NA级别的小节距光栅的+1/-1衍射级的强度.
该实施例可用于通过将一个具有一形状的遮拦物放在辐射光束中,并检测由于基底倾角改变造成的在基地上所述具有一形状的遮拦物的宽度和形状的变化,从而计算基底倾角的改变.该具有一形状的遮拦物可为,例如,如图9a和9b中所示的十字交叉线.当然,它也可为任何其它形状,并且它并非必须位于光瞳面的中心。
测量晶片倾角的思想是基于晶片面中的倾角造成光瞳面中的偏移这个基本关系上。在本实施例中,一个十字交叉线遮拦物放置在照射光束的中心处.这在光瞳面上的散射光中产生一个黑色十字交叉线,如图9a中所示.
如果基底倾角变化,则该交叉线的位置将变化.结果是,可测得该图案(在零倾角处)与一个在一未知倾角处的实际测量之间的差别,以便获得一个如图9b中所示的图像.基底中的一个小倾角并不引起光环带中基本的形状变化,然而它将引起光瞳面图像中的偏移.该偏移通常很小,约为0.1个像素.为了能够检测到这样一个小偏移,可通过例如曲线拟合来内插像素之间的值.通过发生在环带边缘的暗-明过渡区的曲线拟合,可测得该环带的子像素位移.
这些过渡区的宽度和符号可被用于计算并校正二维基底的倾角.以此方式,可以以恒定(零)倾角来测量该基底.
图10表示了在基底的共轭面中利用具有环状强度分布的辐射检测到的小节距光栅的衍射级.利用环状强度分布允许如图10中所示图像的形状,并因而允许基底倾角的更清晰、更精确的测量.标记为0的图像为成像在检测器中的中央零级衍射级.标记为-2、-1、1和2的图像为更高的衍射级.这些较高的衍射级相对于较低的衍射级偏移,从而更容易地测量孤立的一维和二维特征的重叠量度量.
为了加速计算时间,在某些情况下,特别是当期望平滑变化时,不必在光瞳面中的每个单独位置上计算模拟信号.在这些情况下,可测量一个粗格栅,并利用像素内插技术在光瞳面上内插整个形状.环状光束在此情况下也更为有利,这是因为在光瞳面中存在仅接收来自第一级衍射光的区域。如果采用例如阻挡光束,光瞳面中的每个点将接收来自零级或者零级与第一级相组合的光,造成在光瞳面上的测量误差。
利用散射仪的常规测量涉及每次以一个单一的偏振态,在一个单一基底上测量单一目标的特性。这限制了通过该散射仪的基底的吞吐量;并潜在地限制了曝光步骤.本发明的一个实施例使用照射源,将多个照射光斑投影到基底上.散射仪的检测器同时检测从基底表面反射的该多个照射点的角分解光谱.该多个照射光斑可利用一个双照射光纤或一个渥拉斯顿棱镜来产生,其用于产生两个正交偏振照射光斑。
图11表示了散射仪硬件的一部分.两个照射光斑70在经过位于光瞳面40中的高数值孔径物镜被继续传输到基底6上之前,在光束分离器50中被分离.反射光束通过两个光楔62被向上传输,该两个光楔62将两个位于光瞳面中的角分解光谱分离,该光楔本身被定位在中间像平面42上。然后该照射光束被在图11顶部的再成像光瞳面40上的CCD检测到。因而可进行两个或甚至更多的平行测量;例如对于单偏振态的水平和垂直线;或甚至对于TE和TM偏振两者的水平和垂直线。
本发明的一个实施例将该散射仪转变成一个椭圆偏振计.为此,照射支路还包括一个第一偏振器,其线性偏振该辐射束;一个光束分离器,其将辐射束分离成两个正交分量(ETB,ETH);一个第二偏振器,其偏振散射光束;一个位于第一和第二偏振器之间的可变补偿器(一个Pockells Cell、渥拉斯顿棱镜对或Soleil-Babinet补偿器),该可变补偿器用于在正交偏振分量之间(以及可选地,在光束分离器和高数值孔径透镜之间)改变光程差;以及一个二维检测器,用于检测所产生光束分量的正弦强度改变。该补偿器通常位于散射仪的主照射支路中,尽管它当然可以位于第二照射支路中。
该二维检测器,例如一个互补金属氧化物半导体检测器(CMOS)具有很高的帧频,即在1000帧/秒的范围中.
图12示出了该角分解光谱概念是怎样转变成一个角分解光谱椭圆偏振计的。一个具有两个波长λ1和λ2的照射光束经过一个45°偏振器72传输,反射离开基底6,并在被再次偏振化之前经过一个可变补偿器74传输.在光束分离器和可变补偿器74之间,该照射光束被分成在TE和TM偏振光束之间具有相位差Δ的两束光.图12中格栅36示出了该二维检测器阵列和该阵列一个像素中随时间变化的强度改变。其它像素将表现出与之相当的改变.光束穿过两个带通滤波器76,以获得λ1和λ2的照射分布.所产生的椭圆偏振测量参数cos(Δ)、sin(Δ)和tan(Ψ)实质上对内部传感器散射不敏感,因而信噪比可被提高。该运算是用以下的琼斯(Jones)矢量和矩阵模拟的,尽管它也可用缪勒(Mueller)矩阵来模拟,后者能够在数学模型中计入光学器件的缺陷。
经过第一偏振器的照射区被45°偏振,并以琼斯矢量描述:
基矢量对应于入射到样本靶部上的TE和TM偏振光.反射离开样本的行为造成散射的TE和TM分量振幅和相位的改变.这可用一个琼斯矩阵表示:
其中Δ为散射区TE和TM分量之间的相位差,而RTB和RTM分别为散射的TE和TM分量的振幅.
这些参数为入射角和波长的函数.忽略任何由高NA透镜和光束分离器引入的相位和振幅改变,对于入射到补偿器上的区:
该补偿器引入一个随时间变化的光程差(OPD)——TE和TM分量之间的变化。如果光的波长为λ,对于该补偿器的琼斯矩阵:
所以该补偿器之后的区为:
该偏振器被定向在45°,并具有一个琼斯矩阵:
所以偏振器之后的区为:
入射到检测器阵列上的强度为:
如果OPD在整个测量时间间隔内线性增加,
OPD=Kt
这产生一个时间调谐强度改变:
其中
该强度改变的对比直接与椭圆偏振测量参数tan(Ψ)相关,而正弦改变的相位直接产生椭圆偏振测量参数cos(Δ)和sin(Δ).在一个标准的椭圆偏振测量散射仪中,tan(Ψ)和cos(Δ)为被测量和模拟的信号,以获得分布信息。在此情况下,tan(Ψ)和cos(Δ)被记录为波长的函数.在本发明中,tan(Ψ)和cos(Δ)作为在光瞳面中位置的函数而被获得,且可被用于类似的分析.特别地,该椭圆偏振测量参数被用于通过求解一个逆向散射问题来测量层厚,即将测量参数与模型参数进行比较,并通过将测量参数和模型参数之间的均方根之差(或任何其它合适的度量)最小化来确定叠层参数.
由于改变的频率依赖于波长,各种波长可用一个带通滤波器来分离。这易于通过信号处理,例如利用离散傅立叶变换技术实现.
该补偿器也可被放置在照射支路中.而且,它也可被放置在光束分离器和一个高数值孔径物镜之间.这具有加倍OPD变化的优点.
该二维检测器是本概念的关键部分;为保证足够短的测量时间,它必须具有高帧频.CMOS检测器可达到非常高的帧频,例如1000帧/秒。
如以上51-80段中所述测量重叠量不允许较大的重叠量误差的测量,特别是等于光栅节距整数倍的重叠量误差.显然,如果存在一个重叠量误差,其意味着光栅线互相排列在一起,但偏移若干个光栅节距宽度,则检测小于光栅节距的重叠量误差的能力是没有用处的.
因而本发明的一个实施例使用已经存在于散射仪中的第二检测器支路(如上所述),用于执行重叠量粗略测量,以确定是否存在粗误差,例如光栅重叠量误差实际上是否大于光栅节距.重叠量粗略测量是一个基于成像的技术,其中,一个第二相机观察两个互相重叠光栅的图像,并通过比较基底上标记的边缘位置确定是否存在较大偏移.一个完全的重叠将具有完全对齐的标记边缘.图案识别算法用来确定工艺层中光栅的边缘和抗蚀剂层中光栅的边缘.本测量是在一对光栅的四边或角落上进行的.测得的边缘位置用于计算抗蚀剂光栅相对于工艺层中光栅的位置.
散射仪自身不能测量等于多个光栅节距的重叠量,这一事实是一个主要局限。这是因为其测量原理是基于随光栅节距周期性变化的光栅耦合。换句话说,零重叠量与一个等于节距的重叠量将得到同样的结果。
本发明的散射仪提供一个非常简便的解决方案.该散射仪包括一个独立的成像支路,其将基底表面成像到一个CCD相机上.需要该第二相机支路通过一个对齐和图案识别步骤来测量基底位置.该第二支路被示意性地示于图13中.
光瞳面40的测量(实际角分解测量)需要一个未充满物平面42处的目标的照射源(即测量光斑小于测量目标)。光瞳面成像照射光束在图13中用实线表示.在此情况下,仅有一部分目标被测量,目标区之外的结构未被照射.如果测量光斑充满或溢出测量目标,则测量信号被围绕目标的区域所干扰,数据解释和信号分析将会不必要地复杂化。
另一方面,像平面测量必须过度充填目标,以检测对齐度,这是因为必须对整个光瞳面取样,包括目标的轮廓。用于像平面测量的光线表示为虚线。物平面的图像形成在第一CCD相机80上,而光瞳面图像形成在第二CCD相机82上。
图14示出了零重叠量(左手图)和一个等于两倍光栅节距的X-重叠量(右手图)的一个重叠目标的可能例子.光瞳面测量对于两种情况,将得到相同的零测量重叠量,使其为一种不可靠的测量.然而,像平面测量可清楚地辨别这在这两种情况.以此方式,可如下执行一个可靠的两阶段度量方案:
(1)执行两个像平面测量,以验证不存在很大的重叠量误差.
(2)如果前述测量表明重叠量小于大约200nm,则实施光瞳面测量。该200nm标准是一个象征性例子.它可制定为任何合理的界限.假设像平面CCD具有1000×1000像素,并假设在基底水平的100nm的像素节距,总的视场将为100×100μm2,这对于图案识别和对齐已经足够了,而仍允许以约20-50nm的精度进行粗略的重叠量测量.
仅当整个对齐标记对于CCD来说是可见的时,粗略的重叠量才能被测量.如果,例如,只有标记的中心部分可见,则需要移动基底台至标记的边缘,以能够实施粗略的重叠量的测量.这需要台子的额外移动,从而减慢了测量实施工序。一个更大的视野允许在一个“行程”中捕捉到该标记,并允许粗略测量快速地实施,而第二相机在光瞳面上自由地捕捉图像,并得到详细的重叠量信息.
如果在曝光工具中使用了边缘预对齐和粗略晶片对齐的结果,则用于捕捉相关图像所需的视野甚至可被进一步减小.借助于这些数据,就可能在重叠量度量模块中边缘预对齐完成之后,以μm精度在基底上预测标记的位置.
本发明的实施例不仅检测重叠量,而且利用在光栅或其它周期性结构上布置有临界尺寸度量的散射仪来检测损坏的光栅.该散射仪常规地检测镜面反射光;即直接反射离开光栅的最低阶光.光栅中的局部变形破坏光栅的周期性,并导致沿非镜面反射方向的散射.该散射仪可用于以各种在其镜面反射方向之外的角度检测散射光束的角分解光谱。可使用具有环状强度分布的辐射,或小-Φ照射,以获得更高的精度和更易读的图像.
本发明的一个实施例可用于在一个浸入式光刻设备中检测气泡缺陷,其中在投影系统和基底之间引入一种液体,如上所述.以前利用离线缺陷检验工具来测量气泡缺陷.离线工具需要比在线工具更长的时间来获得结果,这是因为基底必须被取出生产线并排队等候.液体中的气泡造成基底上的表面缺陷,其将在表面曝光时造成光散射.利用本发明的散射仪来测量散射辐射,散射的原因被回推到气泡缺陷上。
以上虽然已经描述了本发明的具体实施例,应认识到本发明可不同于所述而实施。这些描述并不意在限制本发明.这些具体描述的实施例是一般工作原理的外延,并不一定互相排外;基于如上所述在一检测器上观察到的结果,它们均可被并入单一度量工具,以增加其有效性。此外,尽管这里描述的实施例涉及光刻应用,该硬件和应用并不限于这些。它们可用于其它用途,例如监视蚀刻工艺步骤,等等.
Claims (11)
1.一种被配置成用于测量基底的特性的散射仪,所述特性为基底中的两个周期结构的重叠量,所述散射仪包括:
一高数值孔径透镜;和
一边缘,适于放置在一中间物平面的相对两半的其中之一内,
其中,在所述高数值孔径透镜的光瞳面中以多个角度和多个波长同时测量从所述基底一表面反射的一辐射束的一角分解光谱的特性,以便测量所述基底的所述特性。
2.根据权利要求1的散射仪,其中所述反射光谱的所述特性包括(a)一横向磁和横向电偏振光的强度,(b)一横向磁和横向电偏振光之间的相位差,或同时包括(a)与(b)。
3.根据权利要求1的散射仪,包括:
在一辐射源和所述基底之间的一波长复用器,所述辐射源被配置成用于提供所述辐射束;以及
在所述基底和一检测器之间的一解复用器,所述检测器被配置成用于测量所述反射光谱的所述特性。
4.一种用于利用光刻技术的器件制造过程中的检验方法,包括:
提供两个平行层叠但未对齐的光栅,从而产生一个光栅相对于另一个光栅的一重叠量;
利用一散射仪测量所述光栅的一反射光谱;并
由反射光谱中的不对称性推导所述重叠量的程度。
5.根据权利要求4的方法,其中测量所述反射光谱包括测量(a)在多个角度处的所述反射光谱的特性,(b)多个波长,或同时测量(a)和(b)。
6.根据权利要求5的方法,其中所述反射光谱的所述特性包括(i)一横向磁和横向电偏振光的强度,(ii)一横向磁和横向电偏振光之间的相位差,或同时包括(i)与(ii)。
7.一种用于利用光刻技术的器件制造过程中的检验方法,包括:
提供两个平行层叠但未对齐的光栅,从而产生一个光栅相对于另一个光栅的重叠量;
利用一散射仪测量所述光栅的一反射光谱;
由反射光谱中的不对称性推导所述重叠量的程度;
执行对所述光栅的重叠量的粗略测量,包括确定所述重叠量误差是否大于所述光栅节距宽度。
8.根据权利要求7的方法,包括:
(i)执行一辐射束的两个像平面测量,以确定存在大于所述光栅节距的重叠量误差;且
(ii)如果确定的重叠量低于一预定的阈值,则实施所述辐射束的一光瞳面测量。
9.一种用于同时测量一基底上多个目标的特性的散射仪,所述特性为重叠量,所述散射仪包括:
一高数值孔径透镜;
一投影器,被配置成用于将多个照射点投影到一基底上;和
一检测器,被配置成用于同时检测从所述基底一表面反射的多个辐射点的一角分解光谱,
其中,在所述高数值孔径透镜的光瞳面中以多个角度同时测量所述反射光谱的特性,以便测量所述基底的所述特性。
10.根据权利要求9的散射仪,包括一分离器,用于产生两个相同偏振的照射光斑。
11.一种利用光刻技术的器件制造方法,包括:
将一辐射束投影到一基底的一靶上;
在所述光束到达所述基底之前,将所述光束分离成多个光束;并且
利用一散射仪,在一高数值孔径透镜的光瞳面中,同时通过预定范围的角度和波长测量所述多个光束的反射光谱,以便同时测量所述基底上的多个目标。
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