CN1917240B - Light-emitting semiconductor device possessing light-emitting conversion element - Google Patents
Light-emitting semiconductor device possessing light-emitting conversion element Download PDFInfo
- Publication number
- CN1917240B CN1917240B CN200610101860XA CN200610101860A CN1917240B CN 1917240 B CN1917240 B CN 1917240B CN 200610101860X A CN200610101860X A CN 200610101860XA CN 200610101860 A CN200610101860 A CN 200610101860A CN 1917240 B CN1917240 B CN 1917240B
- Authority
- CN
- China
- Prior art keywords
- semiconductor device
- luminous
- radiation
- inverting element
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Light-emitting semiconductor component with a radiation-emitting semiconductor body (1) and a luminescence conversion element (4, 5). The semiconductor body (1) emits radiation in the ultraviolet, blue and/or green region of the spectrum, and the luminescence conversion element (4, 5) converts a part of this radiation into radiation of a greater wavelength. This enables light-emitting diodes which emit mixed-colour, in particular white, light by means of a single light-emitting semiconductor body to be produced. The specially preferred luminescence conversion dye is YAG:Ce.
Description
The application is to be denomination of invention the dividing an application for the one Chinese patent application 200310118179.2 of " luminous semiconductor device with luminous inverting element " on June 26th, 1997 applying date of applicant Osram-Puto Semiconductor Co., Ltd..
Technical field
The present invention relates to the luminous semiconductor device of emitted radiation.
Background technology
Such semiconductor device is for example had gained some understanding from the DE 38 04 293 of open file.Introduced the structure of a kind of electric exciting light-emitting diode or laser diode in the literary composition.In this structure, whole emission spectrum of diode emission are passed to the bigger direction of wavelength through a plastic components that is mixed with fluorescigenic change light organic dyestuff.Through this measure, make this structure launch the light that another kind is different from the color of light-emitting diode emission.Through in plastics, mixing different types of dyestuff, use the light emitting diode construction that just can process the light of emission different colours with a kind of light-emitting diode.
In DE-OS 2 347 289, delivered a kind of infrared (IR) solid state lamp, wherein, on the edge of an IR diode, be coated with fluorescer, thereby made the IR ray of this place emission be transformed into visible light.Adopt the purpose of this measure to be,, in the IR transmitted intensity that reduces the diode emission, convert wherein as far as possible little a part of ray to visible light as far as possible littlely for the purpose of controlling.
In addition; In EP 486 052, delivered a kind of light-emitting diode; Wherein, Between substrate and one deck active electroluminescent layer, layer of semiconductor optical excitation photosphere is set at least, will be transformed into the light of second wavelength period towards the light of first wavelength period of substrate emission from this active layer, thereby makes this light-emitting diode launch the light of various different wave length sections altogether.
In the many rising range of application of light-emitting diode; The display element on the Kfz panel board for example; The interior lighting of aircraft and automobile, and in the light emitting diode indicator that can launch panchromatic light, all strict requirement is proposed light-emitting diode; Make it can produce mixed light, particularly white light.
In JP-07 176 794-A, introduced a kind of planar light source of launching white light, the front end of a transparent panel therein is provided with the light-emitting diode of two emission blue lights, to the internal emission light of transparent panel.Scribble the coating of luminescent substance in opposite directions on the surface in two first type surfaces being provided with of opposite two of transparent panels, just can be luminous after it receives diode blue-light excited.The wavelength of the blue light that luminescent substance wavelength of light emitted and diode are launched is different.Adopt the element of this known structure but to be difficult to adopt this mode to be coated with ability so that the fluorescent material of light emitted equal white light.In addition, the reproducibility in production in enormous quantities has become big problem, because as long as the thickness of fluorescence coating is slightly uneven, for example from the rough reason of transparent panel, will cause radiative white color to change.
Summary of the invention
According to basic task of the present invention be: provide a kind of according to the beginning said mode semiconductor device, can evenly launch secondary colour, can adopt the simple process method to produce in enormous quantities, can guarantee the reproducibility characteristic of device again to the full extent.
Semiconductor device according to described in first aspect of the present invention just can be accomplished this task.Described according to other aspects of the present invention is favourable structure.Provided the purposes of preferentially selecting for use according to semiconductor device of the present invention of the present invention aspect other.
The semiconductor device of emitted radiation comprises:
A semiconductor body, it has a semiconductor layer sequence, and this semiconductor layer sequence is suitable for launching the electromagnetic radiation from first wavelength period of ultraviolet, blueness and/or green spectral range;
First electrical lead and second electrical lead, each electrical lead conduction is connected to said semiconductor body; And
Luminous inverting element; Said luminous inverting element is transformed into the partial radiation of first wavelength period radiation of second wavelength period different with said first wavelength period; Thereby make said semiconductor device emission polychromatic radiation, this polychromatic radiation comprises and is derived from said semiconductor body and the radiation of said first wavelength period through said luminous inverting element and the radiation that is derived from said second wavelength period of said luminous inverting element;
Wherein, Said luminous inverting element comprises the particle of inorganic fluorescer in a plastic-substrates, thereby like this directional radiation properties of said first wavelength period that decays is made contributions: the said radiation that makes the said radiation that is derived from said first wavelength period said semiconductor body and through said luminous inverting element and be derived from said second wavelength period of said luminous inverting element mixes with the mode of the even color sensation in implementation space.
The emitting semiconductor main body that has according to regulation of the present invention is a kind of sandwich construction, particularly by a kind of Ga that uses
xIn
1-xN or Ga
xAl
1-xThe active semi-conductor sandwich construction that N processes when semiconductor device is worked, is launched a kind of electromagnetic radiation of first wavelength period that is made up of ultraviolet, indigo plant and/or green glow spectral coverage.Luminous inverting element will be transformed to a kind of ray of second wavelength period according to following manner from a part of ray of first wavelength period, just by semiconductor device emission hybrid ray, the mixed-color light that particularly is made up of the ray of the ray of first wavelength period and second wavelength period.In other words, for example luminous inverting element is that a spectrum segment of from the ray of semiconductor body emission, only preferentially choosing in first wavelength period is selected to absorb, and launches at the long wave band (in second wavelength period) of wavelength then.What preferentially select is that the wavelength of launching at semiconductor body is a relative maximum of intensity in λ≤520nm ray, and the wavelength period in the spectrum of being selected to absorb by luminous inverting element then is to be in this beyond maximum of intensity.
Employing according to another advantage of the present invention is, can some (one or more) be transformed into a plurality of second wavelength period from first spectrum segment of first wavelength period.Thereby also possibly produce the advantage of the multiple mixture of colours and colour temperature.
The special advantage that has according to semiconductor device of the present invention is wave spectrum and photochromic big or small the keeping within bounds of operating current of not flow through semiconductor body of emission thus that produces through luminous conversion.When the ambient temperature of semiconductor device changes, and when causing well-known operating current intensity to produce acute variation thus, this advantage will have special significant meaning.Particularly a kind of is that the light-emitting diode of semiconductor body of base is very responsive in this respect with GaN.
In addition, can only need an independent control voltage, thereby also can only need an independent control voltage configuration, so make the required setup fee of the control circuit of semiconductor device rest on very little degree according to semiconductor device of the present invention.
In according to the version of especially preferentially selecting for use of the present invention, above semiconductor body or above be provided with a kind of luminous transform layer of partially transparent, just supply the luminous transform layer of partially transparent of usefulness of the semiconductor body divergent-ray of divergent-ray.For the light that guarantees to launch can have unified color certainly; What preferentially select for use is that luminous transform layer is made the structure with such constant thickness; So just have good especially advantage, it is almost constant to make the light of all transmit directions of semiconductor body emission pass the path of luminous transform layer.This light that can be implemented in that semiconductor device launches on all directions all is the light of same color.A kind of according to improve structure, be that according to another good especially advantage of semiconductor device of the present invention adopt simple method just can reach reproducibility highly, this is significant for a kind of efficient production in enormous quantities.Can be used as luminous transform layer usefulness be for example to be mixed with the layer of varnish or the resin bed of fluorescer.
The version of preferentially selecting for use according to another kind of the present invention is the luminous inverting element of making of the luminous conversion involucrum of partially transparent; This involucrum encases the part (sometimes also encasing the part of conductive lead wire) of semiconductor body at least, and uses as structure involucrum (shell) simultaneously.The advantage of a kind of semiconductor device of form mainly is according to this configuration, when carrying out this make, can follow to use and make the production line that light-emitting diode (for example radially light-emitting diode) is habitually practised.The structural elements of involucrum is the used transparent plastic of material replacement general-purpose diode with luminous conversion involucrum.
Employing is during according to other favourable versions of semiconductor device of the present invention and above-mentioned two versions of preferentially selecting for use; Luminous transform layer or luminous conversion involucrum are the transparent materials that is mixed with a kind of fluorescer at least with a kind of; Plastics for example, preferentially selecting for use is epoxy resin (plastics and the fluorescer preferentially selected for use are seen the following stated).When adopting this method, the most economical with the manufacturing cost that adopts luminous inverting element.Used for this reason manufacturing process does not compare with the production line of light-emitting diode can add a large sum of expense in addition.
What adopt that the improvement structure of especially preferentially selecting for use of of the present invention or said structure form need consider in advance is that the wavelength of this wavelength period or second wavelength period will be far longer than the wavelength of first wavelength period.
What will consider especially is, complimentary to one another between one second spectrum segment of first wavelength period and one second wavelength period.Adopt such way, can be from a unified colored light sources, particularly the semiconductor body from a unified blue light-emitting produces mixed light, particularly white light.For example, the part of the ray from the blue coloured light spectral coverage of semiconductor body emission is transformed into the sodium yellow spectral coverage of the complementary color of blue look for the semiconductor body that makes blue light-emitting produces white light.Through selecting suitable luminous inverting element, particularly granularity, concentration for use, change the colour temperature or the color bits of white light whereby through selecting suitable fluorescer, fluorescer for use.In addition, this structure also helps provides a kind of possibility, promptly adopts the possibility of mixing fluorescer, thereby can help tone is adjusted to point-device degree.Although so,, make luminous inverting element carry out inhomogeneous structure by means of the fluorescer uneven distribution.Through above-mentioned measure, the different length that can help passing for light luminous inverting element path compensate.
Through the version of the semiconductor device preferentially selected for use according to the present invention, make other members in luminous inverting element or the member involucrum can be, and don't can exert an influence wavelength conversion with adaptive with one or more dyestuffs.Can use the habitual dyestuff of general-purpose diode, for example azo dyes, anthraquinone dye or perinaphthenone (Perinon) dyestuff for this reason.
In order to prevent that luminous inverting element from receiving the influence of too high radiation dose, through favourable transformation, perhaps through the above-mentioned version of preferentially selecting for use for semiconductor device; Adopt on part surface to major general's semiconductor body; For example plastic transparent outer cover encases, and is coated with luminous transform layer in its surface, so as to the radiodensity that reduces luminous inverting element, then reduce its radiation dose; According to the difference of material therefor, to producing desirable influence in useful life of luminous inverting element.
In through measure and version thereof of especially preferentially selecting for use of the present invention, adopt a kind of semiconductor body of launching such ray, promptly the wavelength of emission spectrum emitted between 420nm and 460nm, particularly at the 430nm place (for example with Ga
xAl
1-xN be the basis semiconductor body), perhaps at the 450nm place (for example with Ga
xIn
1-xN is the semiconductor body on basis) maximum of intensity of appearance.Adopt like this, just help producing nearly all color and secondary colour in the C.I.E. color table according to semiconductor device of the present invention.Here the semiconductor body of divergent-ray be with as listed above mainly be to use the electroluminescence semi-conducting material, but also can use a kind of other electroluminescent materials, for example polymeric material is processed.
During in the improvement structure that other are especially preferentially selected for use of the present invention and in its version; Luminous conversion involucrum or luminous transform layer are processed with a kind of varnish or plastics, for example are to process with a kind of silicon materials, thermoplastics or thermoset plastic material (epoxy resin and acrylic acid resin) that swashs in the device involucrum at light.For example can also process top lid member, as the usefulness of luminous conversion involucrum with thermoplastics.Above listed material can adopt simple method to mix one or more fluorescers.
In semiconductor body being arranged on a breach, or among a prefabricated shell, and when indentation, there covers with a top cover that scribbles luminous transform layer, just can realize especially simply according to semiconductor device of the present invention.A kind of semiconductor device like this can be made on common production line in enormous quantities.What must do this only is on shell, to install after will among this shell, installing semiconductor body again, and the cladding element of for example making of layer of varnish or casting resin layer perhaps covers the prefabricated cover plate of making of thermoplastics.Also can use the shell breach of transparent material instead, for example use the transparent plastic packing, the special like this wavelength that can not change from the light of semiconductor body emission; If be ready, can also make luminous mapped structure in advance.
From the reason that realizes especially easily; The improvement structure of especially preferentially selecting for use according to semiconductor device of the present invention be with semiconductor body be arranged on one prefabricated or installed already in the shell of lead frame; And using shell at least, the casting resin of partially transparent fills up; Before the cast breach, mix fluorescer in advance.Owing to use the pours that is mixed with fluorescer to pour into a mould semiconductor body, just equal to be provided with luminous inverting element.
For making the material that luminous inverting element especially preferentially selects for use is the epoxy resin that is mixed with one or more fluorescers.Also can adopt polymethyl methacrylate (PMMA) substituted epoxy resin.
Can in PMMA, be mixed with organic dye through simple mode.Wanting to make transmitting green, yellow and red, can use according to semiconductor device of the present invention, is the dye molecule of base with perinaphthene alkene (Perylen) for example.Can also be through mixing the semiconductor device that the metal-organic method of 4f-is made emission UV, visible or infrared light.Particularly through mixing Eu
3+For the metal organic chelate (λ ≈ 620nm) of base can realize red-emitting, according to semiconductor device of the present invention.Red-emitting, can be mixed with Ti in advance through mixing the sapphire chelate of 4 valencys or mixing according to semiconductor device of the present invention, that particularly launch the semiconductor body of blue light
+ 3Sapphire carry out the method for mixing manufacturing.
Adopt so a kind of mode help making the emission white light according to semiconductor body of the present invention; Promptly through suitably selecting for use fluorescer will be transformed into the wave band of complementary color by the blue streak of semiconductor body emission; Particularly Lan Se and yellow wave band perhaps are transformed into stack three coloured light, for example blue, green and ruddiness.So just can produce gold-tinted, perhaps produce green glow and ruddiness through fluorescer.Consequent white color (tone in the CIE-color table) can be through suitably selecting dyestuff and the concentration change thereof that mixes usefulness for use.
Be suitable for doing the emission white light, according to the fluorescer of semiconductor device by using of the present invention be the perinaphthene alkene fluorescer of 300 1 types of the BASF Lumogen F of the BASF Lumogen F 083 that uses of green light, the BASF Lumogen F 240 that jaundice light is used, the usefulness that glows for example.These fluorescers can adopt simple mode to mix, for example in the transparent resin.
The method of preferentially selecting for use that a kind of semiconductor body that utilizes blue light-emitting is made the semiconductor device of green light is to replace the UO in the luminous inverting element with borosilicate glass
2 ++
Employing is for according to semiconductor device of the present invention and to carry out the improved improvement structure that another is preferentially selected for use for the structure of above-mentioned favourable version be in other transmission components of luminous inverting element or structure involucrum, to mix the optical scatter that is referred to as diffusant in addition.Can help making the coloring of semiconductor device and emissivity to reach optimization through this way.
A kind of particularly advantageous version according to semiconductor device of the present invention is at least a portion transparent epoxy resin of luminous inverting element, to mix a kind of inorganic fluorescer.Best method just adopts straightforward procedure to make inorganic fluorescer and epoxy resin form compound.A kind of inorganic fluorescer that especially preferentially select for use, that be used for making the semiconductor device that emits white light is phosphorus YAG:Ce (Y
3Al
5O
12: Ce
3+).This fluorescer can adopt simple especially method to mix mutually with transparent epoxy resin habitual in LED technology.Other can be considered as the garnet that doped with rare-earth elements is arranged that fluorescer is used, like Y
3Ga
5O
12: Ce
3+, Y (Al, Ga)
5O
12: Ce
3+, Y (Al, Ga)
5O
12: Tb
3+And the sulfide such as the SrS:Ce that are mixed with the alkaline-earth metal of rare earth element
3+, Na, SrS:Ce
3+, Cl, SrS:CeCl
3, CaS:Ce
3+And SrSe:Ce
3+
In addition, be mixed with the sulfo-gallate of rare earth element, for example CaGa
2S
4: Ce
3+, SrGa
2S
4: Ce
3+Be particularly suitable for generating dissimilar mixed-color light.Also can consider to use the aluminate that is mixed with rare earth element, for example YAlO
3: Ce
3+, YGaO
3: Ce
3+, Y (Al, Ga) O
3: Ce
3+And the orthosilicate M that is mixed with rare earth element
2SiO
5: Ce
3+(M:Sc, Y, Sc) Y for example
2SiO
5Ce
3+The compound of all yttriums can substitute with scandium or lanthanum in principle.
Another one can with the version according to semiconductor device of the present invention be to adopt the luminescence component of the involucrum that pure inorganic material processes at least, that is to say, be luminous conversion involucrum or the luminous transform layer that adopts pure inorganic material to process.Therefore, luminous inverting element is in the material to the transparent or partially transparent of temperature stabilization, to mix inorganic fluorescer and process with a kind of.Particularly use a kind of advantageous method to mix in the unorganic glass (for example silex glass) of low melting glass that a kind of Phos processes.A kind of method of preferentially selecting for use of making so luminous transform layer is a Sol-Gel-technology, and adopting this technology is with whole luminous transform layer, is not only the material that inorganic fluorescer also mixes to some extent and can in one procedure, carries out.
In order to improve mixing by the ray of the ray of first wavelength period of semiconductor body emission and second wavelength period of passing through luminous conversion; And radiative look uniformity; To in according to semiconductor device of the present invention, adopt favourable measure; Mix a kind of dyestuff of blue light-emitting in luminous involucrum or luminous transform layer and/or in other elements of structure involucrum in addition, so as to reducing alleged orientation characteristic by the semiconductor body divergent-ray.Orientation characteristic is to instigate the ray of semiconductor body emission to present a kind of transmit direction of preferentially selecting for use.
In an a kind of measure of preferentially selecting for use according to semiconductor device of the present invention, adopt inorganic fluorescer powder to achieve the above object, the fluorescer of this moment can dissolving in the material (substrate) around it.In addition, the refractive index of inorganic fluorescer and the material around it is different.So just increased a favourable part, promptly can not received keeping within bounds of fluorescer granularity and produce scattering by the part of the light of fluorescer absorption.Will reduce the orientation characteristic of semiconductor body divergent-ray greatly like this, thereby make the ray of unabsorbed ray and the luminous conversion of process be able to even mixing, the result causes producing three-dimensional evenly look and presses.
Owing to make luminous conversion involucrum or used epoxy resin and the inorganic fluorescer (Y of luminous transform layer
3Al
5O
12: Ce
3+) mix mutually, so a kind of launch white light, can realize with preferred especially mode according to semiconductor device of the present invention.Part by the blue look ray of semiconductor body emission is displaced to yellow spectrum segment by inorganic fluorescer, thereby is pushed to the wavelength period with blue look complementary.Through the melting concn of suitable selection dyestuff, can change the tone (color bits in the CIE color table) of white light.
Inorganic fluorescer YAG:Ce also has an other advantage, promptly can become a kind of refractive index therefrom at the insoluble pigment about 1.84 (granularity is in 10 μ m).Except wavelength generation conversion, also can produce a kind of scattering effect like this, the result causes making the ray of the diode of launching blue light and the gold-tinted of process conversion emission to carry out good mixing.
In another improvement structure of preferentially selecting for use according to semiconductor device of the present invention; And in the above-mentioned favourable version, the member that sees through ray to other one of luminous inverting element or structure involucrum increases in addition and is mixed with the optical scatter that is called diffusant.Adopt such way, help the further optimization of look pressure and semiconductor device emitting performance.
Special good advantage is, launch according to the present invention white light semiconductor device and said structure form thereof, main be that luminous efficiency and the luminous efficiency of an incandescent lamp bulb of the semiconductor body of the blue light-emitting processed of base has comparativity with GaN.Its reason is that the outside quantum output variable of this semiconductor body has only a few percent, and on the other hand the luminous efficiency of organic dye molecule through being everlasting more than 90%.In addition, compare with incandescent lamp bulb according to semiconductor device of the present invention, its in useful life speciality, very solid, operating voltage is less.
Favourable part in addition is; Owing to the sensitivity of naked eyes along with the increase of wavelength is increased; So human eye for according to the resolution capability of semiconductor device brightness of the present invention with for being unkitted comparing of luminous inverting element; Although semiconductor device equally all is housed, but can obviously improves for the former.
In addition, the favourable part according to the principle of the invention also is except the emitted in ultraviolet ray, also can make visible emitting into when a semiconductor body.The brightness of the light of semiconductor body emission is obviously improved.
The said here notion that makes semiconductor body launch blue light through luminous conversion can also help utilizing the multi-stage light emitting inverting element to be expanded according to ultraviolet → indigo plant → green → Huang → red order.At this moment, the luminous inverting element of multiple spectrum being selected emission is set according to sequencing in the semiconductor body back.
The dye molecule that can also adopt favourable mode that multiple different spectrum selection is launched mixes among the transparent plastic of luminous inverting element in the lump.So just can produce very wide coloured light spectrum.
Special use YAG:Ce to make special benefits luminous conversion dyestuff, that launch the semiconductor device of white light according to the present invention to be, this fluorescer receives blue-light excited meeting produces about 100nm between the absorption of spectrum and emission passing.This back suction that can cause reducing the light of launching for fluorescer is greatly received, and the result causes the raising of luminous efficiency.In addition, YAG:Ce has (for example UV-) high stability (mainly being to be higher than the organic fluorescence agent) of favourable light and heat chemistry, so be suitable for the diode that emits white light that is manufactured on the open air and uses in high temperature section.
Up to now, YAG:Ce obviously is being a most suitable a kind of fluorescer aspect back suction receipts, optical efficiency, photochemical stability and the manufacturing processing.And can also be used for using at the garnet that is mixed with the phosphorus of Ce, particularly be mixed with Ce according to thinking.
According to the present invention particularly advantageous be to be particularly suitable for the power consumption that panchromatic LED shows little, be suitable in the Kfz car or aircraft cabin intraoral illumination and in the illumination of the display unit of Kfz panel board etc. or liquid crystal display, using.
Description of drawings
Combine the explanation of Fig. 1 to 14 referring to following 9 embodiment according to other characteristics of the present invention, advantage and practicality.
Fig. 1 is the constructed profile according to semiconductor device first embodiment of the present invention;
Fig. 2 is the constructed profile according to semiconductor device second embodiment of the present invention;
Fig. 3 is the constructed profile according to semiconductor device the 3rd embodiment of the present invention;
Fig. 4 is the constructed profile according to semiconductor device the 4th embodiment of the present invention;
Fig. 5 is the constructed profile according to semiconductor device the 5th embodiment of the present invention;
Fig. 6 is the constructed profile according to semiconductor device the 6th embodiment of the present invention;
Fig. 7 is an emission spectrum sketch map of launching the semiconductor body of blue light that has with GaN a sandwich construction that is base;
Fig. 8 is the emission spectrum sketch map according to the semiconductor device of two emission white lights of the present invention;
Fig. 9 is the generalized section of the semiconductor body of emission blue light;
Figure 10 is the constructed profile according to semiconductor device the 7th embodiment of the present invention;
Figure 11 is the emission spectrum sketch map according to semiconductor device of the present invention that emission mixes ruddiness;
Figure 12 be the emission white light according to other the emission spectrum sketch map of semiconductor device of the present invention;
Figure 13 is the constructed profile according to semiconductor device the 8th embodiment of the present invention;
Figure 14 is the constructed profile according to semiconductor device the 9th embodiment of the present invention.
Part same or a same purpose in each figure is marked with same label.
Embodiment
Luminous semiconductor device shown in Figure 1 has a semiconductor body 1, back side contact 11, a front contact 12 and a sandwich construction 7 that is stacked to by different laminations, wherein also has the active area of an at least a ray of emission (for example ultraviolet, indigo plant or green) in the semiconductor device operating state.
Shown in Figure 9 is the example that is suitable for as a kind of sandwich construction 7 of the element among this element and the embodiment that all are introduced afterwards.Among the figure, one deck is set on the substrate of processing with SiC 18 scribbles AlN-or GaN-layer 19, the GaN-layer 20 of one deck n-conducting, the Ga of one deck n-conducting
xAl
1-xN-or Ga
xIn
1-xGaN-or one deck Ga of N-layer 21, an other n-conducting
xIn
1-xThe Ga of N-layer 22, one deck p-conducting
xAl
1-xN-layer or Ga
xIn
1-xThe sandwich construction of the GaN-layer 24 of N-layer 23 and one deck p-conducting.On a first type surface 25 of GaN-layer 24, and on a first type surface 26 of substrate 18, a Metal Contact part 27,28 is set respectively, this is to be employed in the conductive contact piece of habitual emitting semiconductor technology used material to process.
Also can adopt other semiconductor bodies of thinking to be fit to according to others skilled in the art as using according to semiconductor device of the present invention.This is equally applicable to all embodiment of the following stated.
In the embodiment in figure 1, semiconductor body adopts a kind of electrically conducting adhesive, and for example a kind of brazing metal or adhesives are fixed on its bottom surface contact 11 on first conductive lead wire 2.Front contact 12 adopts a binding metal silk 14 to be connected with one second conductive lead wire 3.
A part of line segment of semiconductor body 1 unappropriated surface and conductive lead wire 2 and 3 is directly encased with a kind of luminous conversion involucrum 5.This involucrum be preferentially select for use a kind of in transparent LED, use be mixed with fluorescer 6, preferentially select for use the transparent plastic that is mixed with inorganic fluorescer (preferentially select for use is epoxy resin or also can use polymethyl methacrylate) to process; The device that emits white light is preferentially selected Y for use
3Al
5O
12: Ce
3+(YAG:Ce) blending.
Be according to the embodiment of semiconductor component of the present invention and the difference of Fig. 1 that shown in Fig. 2 the part line segment of semiconductor body 1 and conductive lead wire 2 and 3 is not with a kind of luminous coversion material but encases with a kind of transparent involucrum 15.This involucrum can not make the beam wavelength of semiconductor body 1 emission change; Be with a kind of, for example habitual epoxy resin or acrylate or another kind of material that can printing opacity in light-emitting diode technology, for example unorganic glass is processed.
Coating one deck luminous transform layer 4 is as shown in Figure 2 on this transparent involucrum 15, and the whole surface of involucrum 15 is encased, and also can only encase this surperficial part with luminous transform layer 4.Luminous transform layer 4 remains usefulness, is for example processed by a kind of transparent plastic that is mixed with fluorescer 6 (for example epoxy resin, varnish or methyl methacrylate).The semiconductor device that emits white light so also is preferentially to select for use YAG:Ce as fluorescer.
The distinctive advantage of this embodiment is, the path of being passed luminous inverting element by the ray of semiconductor body emission equates substantially.The recurrent that kind of erect image, when the accurate tone of the light of being launched by semiconductor device will depend on the length in this path, this length will play the effect of particular importance.
The output coupling of the light that is sent for the luminous transform layer 4 that improves among Fig. 2 can be provided with a lentiform nappe 29 (dotting) on a side of this device, the emission light that is used for decaying is in the inner total reflection of luminous transform layer 4.This lentiform nappe 29 can then, for example be bonded on the luminous transform layer 4 with transparent plastic or glass manufacturing, perhaps directly is made as the overall structure of the member of luminous transform layer 4.
In the embodiment shown in fig. 3, first and second lead-in wires the 2, the 3rd are embedded in the perhaps pedestal 8 prefabricated, that leave a breach 9 of printing opacity.So-called " prefabricated " is meant, before semiconductor body being installed on the lead-in wire 2, adopts that for example injection moulding is connected the finished product structure that forms on the lead-in wire 2,3 with base 8 in advance.Base 8 is, for example processed by a kind of plastics of printing opacity, and breach 9 is to make the speculum (sometimes through the suitable coating on breach 9 inwalls) that is used for reflecting the usefulness of the ray of being launched at the semiconductor body duration of work according to its shape.Such base 8 is as for the usefulness of the conductive plate of mounted thereto light-emitting diode.Be to adopt before semiconductor body is installed, for example injection moulding is installed in base on the conductive strips (lead frame) of conductive lead wire 2,3.
Embodiment in the positive print 2 is such, in order to improve the optical coupling that comes self-luminous transform layer 4, also a lentiform nappe 29 (dotting) can be set above it here, is used for decaying in the total reflection of the light of luminous transform layer 4 emissions.This nappe can be used the transparent plastic manufacturing, is bonded at, and above the for example luminous transform layer 4, perhaps makes an overall structure jointly with luminous transform layer 4.
Shown in figure 10, in a kind of version of especially preferentially selecting for use, breach 9 usefulness are a kind of contain fluorescer epoxy resin, that is to say it is with a kind of luminous involucrum 5 fillings, form the structure of luminous inverting element.Just can save a cover plate 17 and/or a lentiform nappe 29 in the case.In addition, also have another kind of way shown in figure 13, for example with first conductive lead wire 2 through punching press in the scope of semiconductor body 1 with the interior structure that makes a reflective mirror 34, middle with a kind of luminous conversion involucrum 5 fillings.
Shown in Figure 4 is a kind of radially example of the another kind of manufacturing approach of diode that is called.Among the figure, semiconductor body 1 be through, for example the welding or the bonding method, be fixed among a kind of mirror construction parts 16 that make with first conductive lead wire 2.The structure of this shell shape is a shape habitual in light-emitting diode technology, so no longer elaborate herein.
Semiconductor body 1 in the embodiment of Fig. 4 is to encase with a kind of transparent involucrum 15; As shown in above-mentioned second embodiment (Fig. 2); The wavelength of the ray of semiconductor body 1 emission is changed; Can adopt the transparent epoxy resin or the glass manufacturing of for example in light-emitting diode technology, habitually practising.
The luminous transform layer 4 of coating one deck on this transparent involucrum 15.Used for this reason material still can be plastics or the unorganic glass that in above-described embodiment, adopts, and adds the relevant dyestuff at these place row.
The total that is made up of semiconductor body 1, a part of conductive lead wire 2,3, transparent involucrum 15 and luminous transform layer 4 directly encases with another kind of transparent involucrum 10.The wavelength of the ray that sees through luminous transform layer 4 emissions is changed.This involucrum remains, and for example is employed in the light-emitting diode technology that habitual transparent epoxy resin or unorganic glass process.
Embodiment shown in Figure 5 and the main difference part among Fig. 4 are that the vacant surface of semiconductor body 1 directly encases with a luminous conversion involucrum 5, and then encase with another kind of transparent involucrum 10.In Fig. 5; Also draw a semiconductor body 1 as an example; Another contact-making surface of wherein making contact without the lower edge but using semiconductor multilayer structure 7 instead is made contact, and one second of The latter connects metal wire 14 and is connected with its affiliated conductive lead wire 2 or 3.Self-evident, also can replace such semiconductor body 1 with other embodiment of this paper introduction.Otherwise, can certainly the embodiment among Fig. 5 be used in the aforementioned embodiment.
Also to explain for this self-evident situation herein; The way of planform analogy Fig. 1 embodiment that also can Fig. 5 is used is processed a luminous conversion involucrum 5 of integral body, thereby replaces the way that the transparent involucrum 10 of luminous conversion involucrum 5 and another is used in combination.
In the embodiment of Fig. 6, directly on semiconductor body 1, be coated with the luminous transform layer 4 of one deck (available above listed material).This semiconductor body 1 encases with the another kind of transparent involucrum 10 of a part of conductive lead wire 2,3 usefulness, and the wavelength of the ray that sees through luminous transform layer 4 emissions is changed.This involucrum remains, and for example is employed in the light-emitting diode technology that habitual transparent epoxy resin or unorganic glass process.
Have the luminous transform layer 4 of one deck like this but do not have the semiconductor body 1 of involucrum to also help certainly to be employed in fully shell shape habitual in the semiconductor technology (for example SMD shell, radially shell (seeing also Fig. 5)).
At the embodiment shown in Figure 14 is according to a semiconductor device of the present invention, and a transparent channel member 35 is set on semiconductor body 1, and Here it is at one of semiconductor body 1 outside bag groove 36.Groove shape parts 35 for example process with transparent epoxy resin or unorganic glass, and, for example adopt injection moulding, conductive lead wire 2,3 is encapsulated in together with semiconductor body 1 processes.In such bag groove 36, comprise and scribble one deck and remain the luminous transform layer of processing with epoxy resin or unorganic glass 4, wherein be mixed with above listed inorganic fluorescer particle.Adopt the advantage of this structure to be, can be to guarantee that structure is very simple, fluorescer can not accumulate in advance and not consider in the manufacture process of semiconductor device, for example near the position semiconductor body.Groove shape parts 35 can certainly be made separately separately, also can use instead, and the way that for example covers on the semiconductor body 1 is fixed on the casing component.
Among the embodiment that more than all, introduces; Reach optimization in order to make color get involved radiative degree; In order to make itself and luminous inverting element (luminous conversion involucrum 5 or luminous transform layer 4) suitable; Sometimes in transparent involucrum 15 and/or transparent involucrum 10, mix optical scatter, the most advantageously mix diffusant.Example as such diffusant is the filler of mineral property, particularly CaF
2, TiO
2, SiO
2, CaCO
3Or BaSO
4, perhaps also can use organic pigment.These materials can adopt simple method to mix among the above-mentioned plastics.
Fig. 7, shown in 8 and 12 be a kind of blue light of semiconductor body emission emission spectrum (Fig. 7) (luminous maximum at λ=430nm) or emitting white light of adopting that a kind of such semiconductor body processes, according to the emission spectrum of semiconductor device of the present invention (Fig. 8 and Figure 12).Respectively unit mark wavelength X on abscissa; On ordinate, mark a kind of relative electroluminescence (EL) intensity respectively.
Only some is for conversion into the long wavelength period of wavelength to the ray of being launched by semiconductor body shown in Figure 7, thereby produces the white light of secondary colour.The curve 30 that in Fig. 8, is represented by dotted lines is the emission spectrum according to a kind of semiconductor device of the present invention, and this ray is formed by two kinds of auxiliary wavelength period (Lan Hehuang), total emission be white light.Spectrum among the figure about 400 and 430nm between (indigo plant) and about 550 and 580nm between (Huang) maximum appears respectively.Emission spectrum according to semiconductor device of the present invention of whole piece curve 31 expressions, white is to be mixed by three kinds of wavelength period (by blue, green, the red stack that constitutes three looks).Emission spectrum among the figure for example about 430nm about (indigo plant), 500nm about (green) and 615nm (red) locate to have respectively a maximum.
In addition at the emission spectrum according to of the present invention semiconductor device of emission shown in Figure 11 by the mixed light of blue light (a kind of maximum of wavelength is at about 470nm) and ruddiness (a kind of maximum of wavelength is about 620nm) formation.Emission light is pressed total look of human eye and is magenta.Still be equivalent to shown in Figure 7 by the semiconductor body emission spectrum emitted here.
Shown in Figure 12 be one emit white light, according to semiconductor device of the present invention, possess the emission emission spectrum shown in Figure 7 semiconductor body, wherein used fluorescer is YAG:Ce.In the ray of semiconductor body emission, have only sub-fraction to be transformed into the long wavelength period of wavelength, thereby produce mixed white light.Curve 31 to 33 with different dotted lines among Fig. 8 is emission spectrum of representing according to semiconductor device of the present invention.Luminous inverting element, luminous inverting element is wherein processed with epoxy resin, contains the YAG:Ce of variable concentrations.Each emission spectrum a maximum of intensity occurring between the λ=420nm and λ=430 of blue coloured light spectral coverage, between λ=520 of green light spectral coverage and λ=545 respectively, and most of emission band that wherein contains the maximum of intensity of a longer wavelength all is in the sodium yellow spectral coverage.By obviously visible in Figure 12 curve, adopt according to semiconductor device of the present invention as long as, just can change the CIE-color bits in the white light simply through changing the concentration of the fluorescer in the epoxy resin.
In addition, can also the garnet that be mixed with Ce, sulfo-gallic acid, alkaline-earth metal-sulfide aluminate directly be coated on the semiconductor body, will it not be dispersed in epoxy resin or the glass.
An other special benefits of above-mentioned inorganic fluorescer is, the concentration of fluorescer in epoxy resin for example can will not receive keeping within bounds of solubility as the organic fluorescence agent.Thereby need not use very thick luminous inverting element.
Surely not will be confined on these embodiment for explanation by the foregoing description according to semiconductor device of the present invention according to the present invention.Be with light-emitting diode chip for backlight unit or laser diode chip example in example as semiconductor body, it is also understood that into, for example be the polymer LED of the corresponding spectrum of emission.
Claims (41)
1. the semiconductor device of emitted radiation comprises:
A semiconductor body, it has a semiconductor layer sequence, and this semiconductor layer sequence is suitable for launching the electromagnetic radiation from first wavelength period of ultraviolet, blueness and/or green spectral range;
First electrical lead and second electrical lead, each electrical lead conduction is connected to said semiconductor body; And
Luminous inverting element; Said luminous inverting element is transformed into the partial radiation of first wavelength period radiation of second wavelength period different with said first wavelength period; Thereby make said semiconductor device emission polychromatic radiation, this polychromatic radiation comprises and is derived from said semiconductor body and the radiation of said first wavelength period through said luminous inverting element and the radiation that is derived from said second wavelength period of said luminous inverting element;
Wherein, Said luminous inverting element comprises the particle of inorganic fluorescer in a plastic-substrates, thereby like this directional radiation properties of said first wavelength period that decays is made contributions: the said radiation that makes the said radiation that is derived from said first wavelength period said semiconductor body and through said luminous inverting element and be derived from said second wavelength period of said luminous inverting element mixes with the mode of the even color sensation in implementation space.
2. semiconductor device as claimed in claim 1; Wherein, Said luminous inverting element is transformed into the radiation from a plurality of second wavelength period of different sub spectral regions with the radiation of said first wavelength period, makes the emission of said semiconductor device comprise the polychromatic radiation of radiation of radiation and said a plurality of second wavelength period of said first wavelength period.
3. semiconductor device as claimed in claim 1, wherein, said second wavelength period comprises such wavelength, wherein the wavelength of said first wavelength period of at least some wavelength ratio is long.
4. semiconductor device as claimed in claim 1, wherein, said semiconductor body is suitable in the radiation of said semiconductor device duration of work emitted in ultraviolet, and said luminous inverting element converts at least a portion of this ultra-violet radiation to visible light.
5. semiconductor device as claimed in claim 1, wherein, said first wavelength period of said polychromatic radiation and said second wavelength period part at least are positioned at the complementary colours spectral regions, and cause white light from the combination of the radiation of said first and second wavelength period.
6. like claim 2 or 3 or 4 or 5 described semiconductor device, wherein, said first wavelength period of said semiconductor body emission and two second wavelength period produce the stack triplet charm, thereby make said semiconductor device launch white light at work.
7. semiconductor device as claimed in claim 1, wherein, said semiconductor body radiation emitted has the maximum emission intensity value in the af at wavelength lambda of≤520nm.
8. semiconductor device as claimed in claim 1, wherein, said semiconductor body radiation emitted has the maximum emission intensity value in the wavelength between 420nm and 460nm.
9. like claim 1-5, one of 7 and 8 described semiconductor device, also comprise forming the basic shell that has breach, and said semiconductor body is arranged in the said breach of said basic shell, said breach is partially filled at least to have said luminous inverting element.
10. like claim 1-5, one of 7 and 8 described semiconductor device, wherein, said luminous inverting element comprises a plurality of layers with different wave length conversion characteristics.
11. semiconductor device as claimed in claim 1; Wherein, said fluorescer is from comprising the garnet, the sulfo-gallate that is mixed with rare earth element that are mixed with rare earth element, being mixed with the aluminate of rare earth element and being mixed with the group of orthosilicate of rare earth element and select.
12. semiconductor device as claimed in claim 1, wherein, said fluorescer is the garnet that is mixed with Ce.
13. semiconductor device as claimed in claim 1, wherein, said fluorescer is YAG:Ce.
14. like the semiconductor device of one of claim 1 or claim 11-13, wherein, said fluorescer is that particle mean size is the inorganic fluorescer of 10 μ m.
15. semiconductor device as claimed in claim 1, wherein, said luminous inverting element is equipped with the multiple material different of from the group that comprises organic fluorescer and inorganic fluorescer, selecting.
16. semiconductor device as claimed in claim 1, wherein, said luminous inverting element comprises from being had with part by part not having the dye molecule of selecting molecular group of the organic and inorganic dyestuff of wavelength conversion effect.
17. semiconductor device as claimed in claim 1, wherein, said luminous inverting element is included in fluorescer luminous in the blue region.
18. semiconductor device as claimed in claim 1 comprises the transparent involucrum that is different from luminous inverting element, said transparent involucrum is included in dyestuff luminous in the blue region.
19. semiconductor device as claimed in claim 1, wherein, said luminous inverting element is centered on by transparent involucrum.
20. semiconductor device as claimed in claim 1 also comprises the transparent involucrum that is different from luminous inverting element, said transparent involucrum comprises optical scatter.
21. semiconductor device as claimed in claim 1, wherein, said luminous inverting element comprises optical scatter.
22. semiconductor device as claimed in claim 1; Wherein, Said semiconductor body radiation emitted has relative maximum emission intensity value at wavelength X≤520nm place, and the wavelength period that is absorbed by said luminous inverting element spectral selection is positioned at outside this maximum intensity value.
23. like claim 1 or 21 described semiconductor device, wherein, said semiconductor body is the semiconductor body of coloured light of turning blue, and the part of the blue spectral region radiation of said semiconductor body emission transforms to the yellow spectrum district by said luminous inverting element.
24. like claim 1 or 21 described semiconductor device, wherein, said inorganic fluorescer is embedded in the substrate of thermoplastics or thermoset plastic material.
25. semiconductor device as claimed in claim 1, wherein, said inorganic fluorescer is embedded in the substrate of epoxy resin or acrylic resin.
26. semiconductor device as claimed in claim 21, wherein, said inorganic fluorescer is embedded in the substrate of epoxy resin or acrylic resin.
27. semiconductor device as claimed in claim 25 also comprises forming the basic shell that has breach, and said semiconductor body is arranged in the said breach of said basic shell, said breach is partially filled at least to have said luminous inverting element.
28. like claim 1 or 21 described semiconductor device, wherein, said inorganic fluorescer is embedded in the substrate of low melt unorganic glass.
29. semiconductor device as claimed in claim 1, wherein, said inorganic fluorescer is embedded in the substrate of silicone material.
30. semiconductor device as claimed in claim 21, wherein, said inorganic fluorescer is embedded in the substrate of silicone material.
31. semiconductor device as claimed in claim 29 also comprises forming the basic shell that has breach, and said semiconductor body is arranged in the said breach of said basic shell, said breach is partially filled at least to have said luminous inverting element.
32. like claim 1,21, one of 25 and 29 described semiconductor device, wherein, said luminous inverting element is configured in the downstream along the main radiation direction of the said semiconductor device of seeing from said semiconductor body.
33. semiconductor device as claimed in claim 1, wherein, said luminous inverting element is luminous transform layer.
34. semiconductor device as claimed in claim 33, wherein, said luminous transform layer directly is coated on the said semiconductor body.
35. like claim 1,21, one of 25 and 29 described semiconductor device; Also comprise and form notched basic shell; And said semiconductor body is arranged in the said breach of said basic shell, and said luminous inverting element has luminous transform layer, and luminous transform layer covers said breach.
36. like claim 1,21, one of 25 and 29 semiconductor device, wherein, said luminous inverting element is luminous conversion involucrum, it surrounds at least a portion of said semiconductor body and the part of said first and second electrical leads.
37. an aircraft cabin interior lighting equipment, it comprises like claim 1,21, one of 25 and 29 described a plurality of luminous semiconductor devices.
38. a Kfz room light equipment, it comprises like claim 1,21, one of 25 and 29 described a plurality of luminous semiconductor devices.
39. a display device that is applicable to the Kfz panel board, it comprises like claim 1,21, one of 25 and 29 described a plurality of luminous semiconductor devices, said a plurality of luminous semiconductor devices be set to throw light on display of said display device.
40. display device as claimed in claim 39, wherein, said display device comprises LCD.
41. a full-color LED display device, it comprises like claim 1,21,25 and 29 described a plurality of luminous semiconductor devices one of at least wherein.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19625622A DE19625622A1 (en) | 1996-06-26 | 1996-06-26 | Light radiating semiconductor constructional element |
| DE19625622.4 | 1996-06-26 | ||
| DE19638667.5 | 1996-09-20 | ||
| DE19638667A DE19638667C2 (en) | 1996-09-20 | 1996-09-20 | Mixed-color light-emitting semiconductor component with luminescence conversion element |
Related Parent Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB971974020A Division CN1264228C (en) | 1996-06-26 | 1997-06-26 | Light-emitting semi-conductor component with luminescence conversion element |
| CN2003101181792A Division CN1534803B (en) | 1996-06-26 | 1997-06-26 | Luminous semiconductor device possessing luminous alteration element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1917240A CN1917240A (en) | 2007-02-21 |
| CN1917240B true CN1917240B (en) | 2012-05-23 |
Family
ID=7798103
Family Applications (9)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200610101629.0A Expired - Lifetime CN1893136B (en) | 1996-06-26 | 1997-06-26 | Light radiating semiconductor device and arrangement containing same |
| CN200610101860XA Expired - Lifetime CN1917240B (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device possessing light-emitting conversion element |
| CNB2006100999800A Expired - Lifetime CN100514684C (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device and device containing the same |
| CNB2005100917308A Expired - Lifetime CN100433382C (en) | 1996-06-26 | 1997-06-26 | Single covering element for semiconductor device outer case and apparatus containing the same |
| CNB2006100999783A Expired - Lifetime CN100557833C (en) | 1996-06-26 | 1997-06-26 | Luminous semiconductor device and the device that contains this luminous semiconductor device |
| CNB2005100917280A Expired - Lifetime CN100565945C (en) | 1996-06-26 | 1997-06-26 | The semiconductor chip of divergent-ray and comprise the device of this semiconductor chip |
| CNB2006101016572A Expired - Lifetime CN100502066C (en) | 1996-06-26 | 1997-06-26 | Light-radiating semiconductor component with a luminescence conversion element |
| CNB2006101016500A Expired - Lifetime CN100435369C (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device having radiation converting covering element |
| CNB2005100917295A Expired - Lifetime CN100442555C (en) | 1996-06-26 | 1997-06-26 | Light-radiating semiconductor and device containing with the same |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200610101629.0A Expired - Lifetime CN1893136B (en) | 1996-06-26 | 1997-06-26 | Light radiating semiconductor device and arrangement containing same |
Family Applications After (7)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100999800A Expired - Lifetime CN100514684C (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device and device containing the same |
| CNB2005100917308A Expired - Lifetime CN100433382C (en) | 1996-06-26 | 1997-06-26 | Single covering element for semiconductor device outer case and apparatus containing the same |
| CNB2006100999783A Expired - Lifetime CN100557833C (en) | 1996-06-26 | 1997-06-26 | Luminous semiconductor device and the device that contains this luminous semiconductor device |
| CNB2005100917280A Expired - Lifetime CN100565945C (en) | 1996-06-26 | 1997-06-26 | The semiconductor chip of divergent-ray and comprise the device of this semiconductor chip |
| CNB2006101016572A Expired - Lifetime CN100502066C (en) | 1996-06-26 | 1997-06-26 | Light-radiating semiconductor component with a luminescence conversion element |
| CNB2006101016500A Expired - Lifetime CN100435369C (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device having radiation converting covering element |
| CNB2005100917295A Expired - Lifetime CN100442555C (en) | 1996-06-26 | 1997-06-26 | Light-radiating semiconductor and device containing with the same |
Country Status (2)
| Country | Link |
|---|---|
| CN (9) | CN1893136B (en) |
| DE (1) | DE19625622A1 (en) |
Families Citing this family (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1439586B1 (en) | 1996-06-26 | 2014-03-12 | OSRAM Opto Semiconductors GmbH | Light-emitting semiconductor component with luminescence conversion element |
| DE19638667C2 (en) | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mixed-color light-emitting semiconductor component with luminescence conversion element |
| DE19803936A1 (en) * | 1998-01-30 | 1999-08-05 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Expansion-compensated optoelectronic semiconductor component, in particular UV-emitting light-emitting diode and method for its production |
| DE19829197C2 (en) | 1998-06-30 | 2002-06-20 | Siemens Ag | Component emitting and / or receiving radiation |
| DE19836943B9 (en) * | 1998-08-17 | 2008-01-31 | Osram Opto Semiconductors Gmbh | Photoluminescent layer in the optical and adjacent spectral regions |
| US6204523B1 (en) | 1998-11-06 | 2001-03-20 | Lumileds Lighting, U.S., Llc | High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range |
| DE19934126A1 (en) * | 1999-07-23 | 2001-01-25 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Fluorescent oxide for forming white LEDs, includes cerium-activated garnet-based oxide with terbium addition |
| ES2547927T5 (en) † | 1999-11-18 | 2020-07-30 | Signify North America Corp | White light generation with light-emitting diodes that have different spectra |
| WO2001059851A1 (en) * | 2000-02-09 | 2001-08-16 | Nippon Leiz Corporation | Light source |
| JP4709458B2 (en) | 2000-02-23 | 2011-06-22 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Photoluminescence layer and method for forming the same |
| DE10032453A1 (en) * | 2000-07-04 | 2002-01-24 | Vishay Semiconductor Gmbh | Radiation emitting component used for producing white light has pigments of one or more luminescent dyes arranged in and/or on a glass housing |
| DE10109349B4 (en) * | 2001-02-27 | 2012-04-19 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor component |
| DE10112542B9 (en) * | 2001-03-15 | 2013-01-03 | Osram Opto Semiconductors Gmbh | Radiation-emitting optical component |
| US6841802B2 (en) | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
| US7554258B2 (en) | 2002-10-22 | 2009-06-30 | Osram Opto Semiconductors Gmbh | Light source having an LED and a luminescence conversion body and method for producing the luminescence conversion body |
| KR101280003B1 (en) | 2002-12-25 | 2013-07-05 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | Light emitting element device, light receiving element device, optical apparatus, fluoride crystal, process for producing fluoride crystal and crucible |
| DE10261908B4 (en) * | 2002-12-27 | 2010-12-30 | Osa Opto Light Gmbh | Method for producing a conversion light-emitting element based on semiconductor light sources |
| DE10305093A1 (en) * | 2003-02-07 | 2004-08-19 | BSH Bosch und Siemens Hausgeräte GmbH | Method and device for determining and monitoring contamination states of different liquids |
| US7633093B2 (en) | 2003-05-05 | 2009-12-15 | Lighting Science Group Corporation | Method of making optical light engines with elevated LEDs and resulting product |
| US7777235B2 (en) | 2003-05-05 | 2010-08-17 | Lighting Science Group Corporation | Light emitting diodes with improved light collimation |
| US7528421B2 (en) | 2003-05-05 | 2009-05-05 | Lamina Lighting, Inc. | Surface mountable light emitting diode assemblies packaged for high temperature operation |
| US7157745B2 (en) | 2004-04-09 | 2007-01-02 | Blonder Greg E | Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them |
| WO2005043631A2 (en) * | 2003-11-04 | 2005-05-12 | Matsushita Electric Industrial Co.,Ltd. | Semiconductor light emitting device, lighting module, lighting apparatus, and manufacturing method of semiconductor light emitting device |
| DE102005020695B4 (en) * | 2004-04-30 | 2006-06-22 | Optotransmitter-Umweltschutz-Technologie E.V. | Radiation emitting device with variable spectral properties, superimposes beams from luminescent dyes with different absorption spectra excited by LEDs with different emission spectra |
| DE102004042461A1 (en) | 2004-08-31 | 2006-03-30 | Novaled Gmbh | Top-emitting, electroluminescent device with frequency conversion centers |
| EP1808909A1 (en) | 2006-01-11 | 2007-07-18 | Novaled AG | Electroluminescent light-emitting device |
| DE102006015115A1 (en) * | 2006-03-31 | 2007-10-04 | Osram Opto Semiconductors Gmbh | Electronic module, has units and body covered with electrical insulating layer, where units have surfaces that are electrically conductive and connected by one unit with contact area of body and by path structure |
| DE102007002003B4 (en) * | 2007-01-08 | 2013-11-21 | Johnson Controls Automotive Electronics Gmbh | Indicating instrument, in particular for a motor vehicle, and method for producing a display instrument |
| DE102007057710B4 (en) * | 2007-09-28 | 2024-03-14 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Radiation-emitting component with conversion element |
| DE102008006988A1 (en) * | 2008-01-31 | 2009-08-06 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for producing an optoelectronic component |
| DE102008026841A1 (en) * | 2008-02-22 | 2009-08-27 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
| DE102008020882A1 (en) * | 2008-04-25 | 2009-10-29 | Ledon Lighting Jennersdorf Gmbh | Light emitting device, has inhomogeneous light source and wavelength converting element positioned in relation to each other such that pre-defined optical characteristics of light is achieved by device |
| DE102008025756B4 (en) * | 2008-05-29 | 2023-02-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | semiconductor device |
| US7868340B2 (en) | 2008-05-30 | 2011-01-11 | Bridgelux, Inc. | Method and apparatus for generating white light from solid state light emitting devices |
| DE102008045882A1 (en) * | 2008-09-04 | 2010-03-11 | Esw Gmbh | Dummy exploding |
| DE102008057720A1 (en) * | 2008-11-17 | 2010-05-20 | Osram Opto Semiconductors Gmbh | Radiation emitting device i.e. white light emitting device, has radiation converting layer provided with organic radiation converting luminescent material and arranged at distance from radiation emitting functional layer |
| KR100996446B1 (en) | 2010-05-24 | 2010-11-25 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the light emitting device and light emitting device package |
| DE102010026343A1 (en) * | 2010-07-07 | 2012-03-29 | Osram Opto Semiconductors Gmbh | Component and method for manufacturing a device |
| DE102010047156A1 (en) * | 2010-09-30 | 2012-04-05 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for producing an optoelectronic component |
| DE102011003969B4 (en) * | 2011-02-11 | 2023-03-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Process for producing an optoelectronic component |
| DE102011001928A1 (en) * | 2011-04-08 | 2012-10-11 | Lumitech Produktion Und Entwicklung Gmbh | Color conversion element and lamp |
| DE102011101052A1 (en) | 2011-05-09 | 2012-11-15 | Heraeus Materials Technology Gmbh & Co. Kg | Substrate with electrically neutral region |
| DE102011078906A1 (en) * | 2011-07-11 | 2013-01-17 | Osram Opto Semiconductors Gmbh | METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT BY MEANS OF SPRAYING |
| US9624426B2 (en) * | 2011-08-04 | 2017-04-18 | Philips Lighting Holding B.V. | Light converter and lighting unit comprising such light converter |
| CN103511995B (en) * | 2012-06-29 | 2016-04-20 | 展晶科技(深圳)有限公司 | Light-emitting diode light bar |
| TWI626395B (en) * | 2013-06-11 | 2018-06-11 | 晶元光電股份有限公司 | Light emitting device |
| JP6323650B2 (en) * | 2013-12-20 | 2018-05-16 | セイコーエプソン株式会社 | Surface emitting laser and atomic oscillator |
| DE102014117764A1 (en) * | 2014-12-03 | 2016-06-09 | Osram Opto Semiconductors Gmbh | Radiation-emitting optoelectronic semiconductor component and method for its production |
| EP3254156B1 (en) * | 2015-02-04 | 2020-11-25 | Merck Patent GmbH | Electro-optical switching element and display device |
| DE102018121324A1 (en) * | 2018-08-31 | 2020-03-05 | Osram Opto Semiconductors Gmbh | Sol gels as binders for the production of conversion elements |
| CN111312881A (en) * | 2020-02-27 | 2020-06-19 | 盐城东山精密制造有限公司 | Integrally formed LED device and manufacturing method thereof |
| DE102020206897A1 (en) | 2020-06-03 | 2021-12-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | OPTOELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC COMPONENT |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3875456A (en) * | 1972-04-04 | 1975-04-01 | Hitachi Ltd | Multi-color semiconductor lamp |
| US5379186A (en) * | 1993-07-06 | 1995-01-03 | Motorola, Inc. | Encapsulated electronic component having a heat diffusing layer |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3316109A (en) * | 1963-03-11 | 1967-04-25 | Westinghouse Electric Corp | Coating composition |
| US3440471A (en) * | 1966-03-16 | 1969-04-22 | Gen Telephone & Elect | Electroluminescent cell matrix material of improved stability |
| US3774086A (en) * | 1972-09-25 | 1973-11-20 | Gen Electric | Solid state lamp having visible-emitting phosphor at edge of infrated-emitting element |
| US4599537A (en) * | 1982-04-30 | 1986-07-08 | Shigeaki Yamashita | IR light emitting apparatus with visible detection means |
| US4479886A (en) * | 1983-08-08 | 1984-10-30 | Gte Products Corporation | Method of making cerium activated yttrium aluminate phosphor |
| IT1183061B (en) * | 1984-07-31 | 1987-10-05 | Zambon Spa | COMPOUNDS EQUIPPED WITH ANTI-ALLERGIC ACTIVITY |
| DE3804293A1 (en) * | 1988-02-12 | 1989-08-24 | Philips Patentverwaltung | Arrangement containing an electroluminescent or laser diode |
| DE9013615U1 (en) * | 1990-09-28 | 1990-12-06 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt, De | |
| JPH04186679A (en) * | 1990-11-16 | 1992-07-03 | Daido Steel Co Ltd | Light-emitting diode |
| JP2666228B2 (en) * | 1991-10-30 | 1997-10-22 | 豊田合成株式会社 | Gallium nitride based compound semiconductor light emitting device |
| JPH05152609A (en) * | 1991-11-25 | 1993-06-18 | Nichia Chem Ind Ltd | Light emitting diode |
| JPH0738150A (en) * | 1993-07-22 | 1995-02-07 | Toshiba Corp | Semiconductor light emitting device |
| JPH0799345A (en) * | 1993-09-28 | 1995-04-11 | Nichia Chem Ind Ltd | Light emitting diode |
| JPH07176794A (en) * | 1993-12-17 | 1995-07-14 | Nichia Chem Ind Ltd | Planar light source |
| CN2184257Y (en) * | 1994-02-21 | 1994-11-30 | 中国科学院半导体研究所 | Coupler for semi-conductor light emission and testing |
| JP3116727B2 (en) * | 1994-06-17 | 2000-12-11 | 日亜化学工業株式会社 | Planar light source |
| CN1108819A (en) * | 1994-10-26 | 1995-09-20 | 欧姆龙株式会社 | Semiconductor shining unit and optical device using semiconductor shining unit |
-
1996
- 1996-06-26 DE DE19625622A patent/DE19625622A1/en not_active Ceased
-
1997
- 1997-06-26 CN CN200610101629.0A patent/CN1893136B/en not_active Expired - Lifetime
- 1997-06-26 CN CN200610101860XA patent/CN1917240B/en not_active Expired - Lifetime
- 1997-06-26 CN CNB2006100999800A patent/CN100514684C/en not_active Expired - Lifetime
- 1997-06-26 CN CNB2005100917308A patent/CN100433382C/en not_active Expired - Lifetime
- 1997-06-26 CN CNB2006100999783A patent/CN100557833C/en not_active Expired - Lifetime
- 1997-06-26 CN CNB2005100917280A patent/CN100565945C/en not_active Expired - Lifetime
- 1997-06-26 CN CNB2006101016572A patent/CN100502066C/en not_active Expired - Lifetime
- 1997-06-26 CN CNB2006101016500A patent/CN100435369C/en not_active Expired - Lifetime
- 1997-06-26 CN CNB2005100917295A patent/CN100442555C/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3875456A (en) * | 1972-04-04 | 1975-04-01 | Hitachi Ltd | Multi-color semiconductor lamp |
| US5379186A (en) * | 1993-07-06 | 1995-01-03 | Motorola, Inc. | Encapsulated electronic component having a heat diffusing layer |
Non-Patent Citations (2)
| Title |
|---|
| JP特开平7-99345A 1995.04.11 |
| JP特开平8-7614A 1996.01.12 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1893136B (en) | 2014-03-12 |
| CN100433382C (en) | 2008-11-12 |
| CN100502066C (en) | 2009-06-17 |
| CN100565945C (en) | 2009-12-02 |
| CN1722486A (en) | 2006-01-18 |
| CN1881637A (en) | 2006-12-20 |
| CN1738067A (en) | 2006-02-22 |
| CN100442555C (en) | 2008-12-10 |
| CN100514684C (en) | 2009-07-15 |
| CN1893136A (en) | 2007-01-10 |
| CN100435369C (en) | 2008-11-19 |
| DE19625622A1 (en) | 1998-01-02 |
| CN1913183A (en) | 2007-02-14 |
| CN1983651A (en) | 2007-06-20 |
| CN1917240A (en) | 2007-02-21 |
| CN1722485A (en) | 2006-01-18 |
| CN100557833C (en) | 2009-11-04 |
| CN1905226A (en) | 2007-01-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1917240B (en) | Light-emitting semiconductor device possessing light-emitting conversion element | |
| CN1534802B (en) | Luminous semiconductor device possessing luminous alteration element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: OSRAM AG Free format text: FORMER OWNER: OSRAM OPTO SEMICONDUCTORS GMBH + CO. OHG Effective date: 20111228 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20111228 Address after: Munich, Germany Applicant after: Patra Patent Treuhand Address before: Regensburg, Germany Applicant before: Osram Opto Semiconductors GmbH & Co. OHG |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120523 |
|
| CX01 | Expiry of patent term |