CN1930633A - 用于非易失性存储器的粗略/精细编程的电荷包计量 - Google Patents
用于非易失性存储器的粗略/精细编程的电荷包计量 Download PDFInfo
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- CN1930633A CN1930633A CNA2005800073726A CN200580007372A CN1930633A CN 1930633 A CN1930633 A CN 1930633A CN A2005800073726 A CNA2005800073726 A CN A2005800073726A CN 200580007372 A CN200580007372 A CN 200580007372A CN 1930633 A CN1930633 A CN 1930633A
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Images
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5621—Multilevel programming verification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5624—Concurrent multilevel programming and programming verification
Abstract
Description
假设状态到状态分离为500mA | ||||
状态 | VT | 粗略电流吸收值(nA) | 精细电流吸收值(选项1)(nA) | 精细电流吸收值(选项2)(nA) |
7 | 2.8 | 1000.15 | 489.71 | 239.78 |
6 | 2.4 | 489.71 | 239.78 | 117.40 |
5 | 2.0 | 239.78 | 117.40 | 57.48 |
4 | 1.6 | 117.40 | 57.48 | 28.14 |
3 | 1.2 | 57.48 | 28.14 | 13.78 |
2 | 0.8 | 28.14 | 13.78 | 6.74 |
1 | 0.4 | 13.78 | 6.74 | 3.30 |
假设状态到状态分离为400mA | ||||
状态 | VT | 粗略电流吸收值(nA) | 精细电流吸收值(选项1)(nA) | 精细电流吸收值(选项2)(nA) |
7 | 2.8 | 1000.15 | 489.71 | 239.78 |
6 | 2.4 | 489.71 | 239.78 | 117.40 |
5 | 2.0 | 239.78 | 117.40 | 57.48 |
4 | 1.6 | 117.40 | 57.48 | 28.14 |
3 | 1.2 | 57.48 | 28.14 | 13.78 |
2 | 0.8 | 28.14 | 13.78 | 6.74 |
1 | 0.4 | 13.78 | 6.74 | 3.30 |
Claims (45)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/766,116 US7068539B2 (en) | 2004-01-27 | 2004-01-27 | Charge packet metering for coarse/fine programming of non-volatile memory |
US10/766,116 | 2004-01-27 | ||
PCT/US2005/002143 WO2005073980A1 (en) | 2004-01-27 | 2005-01-25 | Charge packet metering for coarse /fine programming of non-volatile memory |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1930633A true CN1930633A (zh) | 2007-03-14 |
CN1930633B CN1930633B (zh) | 2011-06-29 |
Family
ID=34795598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800073726A Expired - Fee Related CN1930633B (zh) | 2004-01-27 | 2005-01-25 | 用于编程非易失性存储器的设备和方法 |
Country Status (9)
Country | Link |
---|---|
US (3) | US7068539B2 (zh) |
EP (1) | EP1714293B1 (zh) |
JP (1) | JP2007520028A (zh) |
KR (1) | KR100895331B1 (zh) |
CN (1) | CN1930633B (zh) |
AT (1) | ATE448550T1 (zh) |
DE (1) | DE602005017584D1 (zh) |
TW (1) | TWI343056B (zh) |
WO (1) | WO2005073980A1 (zh) |
Families Citing this family (178)
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WO2005073980A1 (en) | 2005-08-11 |
JP2007520028A (ja) | 2007-07-19 |
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