CN1955730B - Heat testing method for LED car light grading plate - Google Patents

Heat testing method for LED car light grading plate Download PDF

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Publication number
CN1955730B
CN1955730B CN2005100308668A CN200510030866A CN1955730B CN 1955730 B CN1955730 B CN 1955730B CN 2005100308668 A CN2005100308668 A CN 2005100308668A CN 200510030866 A CN200510030866 A CN 200510030866A CN 1955730 B CN1955730 B CN 1955730B
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China
Prior art keywords
led
voltage drop
forward voltage
temperature
relation
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Expired - Fee Related
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CN2005100308668A
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Chinese (zh)
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CN1955730A (en
Inventor
朱德忠
顾毓沁
于新刚
梁新刚
朱明华
叶世威
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HASCO Vision Technology Co Ltd
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Shanghai Koito Automotive Lamp Co Ltd
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Priority to CN2005100308668A priority Critical patent/CN1955730B/en
Publication of CN1955730A publication Critical patent/CN1955730A/en
Application granted granted Critical
Publication of CN1955730B publication Critical patent/CN1955730B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

A heat-testing method of grading plate for new LED vehicle headlight includes carrying out forward voltage drop (FVD) and junction temperature (JT) measurement on all LED used said grading plate to obtain relation of FVD to JT, setting environmental temperature on constant-temperature furnace and switching on operation current to determine FVD of LED then switching over to small current to determining FVD of LED under small current, obtaining JT according to determined FVD under small current and obtained relation then setting up relation of FVD under operation current to obtained JT.

Description

The heat testing method of new LED car light luminous intensity distribution plate
Technical field
The present invention relates to a kind of heat testing method, particularly a kind of heat testing method of new LED car light luminous intensity distribution plate.
Background technology
The semiconductor lighting technology is energy-conservation because of it at present, life-span is grown and is widely used, on the light fixture of vehicle, also bring into use in a large number, but because the space of car light is limited, and the parts on the light fixture adopt a large amount of engineering plastics to make, it has the electric power more than 70% will be converted into heat as the light source of light fixture and with LED, so when the design car light, just must consider heat radiation, make the junction temperature of LED device be lower than the limit value of device, if heat dissipation design is wrong, will cause the decline of luminescent properties, lost efficacy even, too high temperature also might be damaged the plastic part of car light simultaneously, present LED car light luminous intensity distribution plate does not still have effective method for the heat test of LED device junction temperature and measures, at first be because its volume is very little, secondly the junction temperature of LED device is a temperature inside, can't utilize survey instrument to measure outside, so present LED car light luminous intensity distribution plate can't be accurately in design process is estimated effectively for the hot situation of each concrete device of car light, only depend on the measurement of a rough infrared thermal imaging equipment, can only obtain a whole surface temperature distribution situation, therefore demand needing to solve the heat test of LED car light luminous intensity distribution plate urgently.
Summary of the invention
The objective of the invention is provides a kind of heat testing method of new LED car light luminous intensity distribution plate at testing existing problem effectively for the temperature regime of the LED on the LED car light luminous intensity distribution plate under in working order in the prior art.Technical scheme of the present invention is the heat testing method of design new LED car light luminous intensity distribution plate, it is characterized in that being made up of the following step: (1) at first carries out the measurement of forward voltage drop and junction temperature to used LED on the LED car light luminous intensity distribution plate, LED to be measured is placed in the constant temperature oven, different temperature is set as environment temperature respectively, utilize a little electric current as exciting current, record the forward voltage drop of LED under the varying environment temperature, obtain the relation of forward voltage drop and junction temperature.(2) determine the forward voltage drop of LED under the working current condition and the relation of junction temperature, set environment temperature in constant temperature oven, the logical working current of going up, measure the forward voltage drop of LED, then working current is switched to little electric current rapidly, record the forward voltage drop of LED under little electric current, obtain junction temperature according to the forward voltage drop of (1) and the relation of junction temperature, set up the forward voltage drop of LED device under the working current relation of junction temperature therewith in view of the above according to the forward voltage drop value that records under the little electric current.Advantage of the present invention is to obtain the LED device forward voltage drop under working current and the relation of junction temperature accurately and easily, makes the thermal behavior of understanding LED luminous intensity distribution plate in the design process of car light.
Below in conjunction with embodiment the present invention is elaborated:
Embodiment
(1) at first used LED on the LED car light luminous intensity distribution plate is carried out the measurement of forward voltage drop and junction temperature, LED to be measured is placed in the constant temperature oven, different temperature is set as environment temperature respectively, utilize a little electric current (1 milliampere) as exciting current, record the forward voltage drop of LED under the varying environment temperature, can think that exciting current belongs to zero for the influence of LED junction temperature this moment, the temperature in the constant temperature oven of this moment is exactly a junction temperature, thereby obtains the forward voltage drop of LED and the relation of junction temperature.(2) determine the forward voltage drop of LED under the working current condition and the relation of junction temperature, set a particular environment temperature in constant temperature oven, the logical working current (working current value by the device regulation is set) of going up is measured forward voltage drop.Then working current is switched to little electric current rapidly, record the forward voltage drop of LED under little electric current, can think, because the junction temperature of the cause LED of thermal inertia still is in the junction temperature under the working current.According to after the forward voltage drop value that once records just can obtain junction temperature, the forward voltage drop that once records before setting up in view of the above is the relation of junction temperature therewith, this relation is the forward voltage drop under the LED device operation current and the relation of junction temperature.Obtain related data for can test the back with a collection of device, for the heat analysis and the design radiator structure of car light are laid the basis of science.Generally be to carry out the test of junction temperature in practice for the LED device in the highest temperature zone on the luminous intensity distribution plate of LED car light, so it is general earlier under car light work predetermined parameter, utilize infrared thermography to carry out the luminous intensity distribution plate temperature distribution measuring of LED car light, under the working current of reality, infrared thermography can demonstrate the distribution situation of temperature, can measure the junction temperature of maximum temperature LED device according to method of testing of the present invention then, with this basis as the design radiator structure.

Claims (1)

1. the heat testing method of new LED car light luminous intensity distribution plate is characterized in that being made up of the following step:
(1) at first used LED on the LED car light luminous intensity distribution plate is carried out the measurement of forward voltage drop and junction temperature, LED to be measured is placed in the constant temperature oven, different temperature is set as environment temperature respectively, utilize a little electric current as exciting current, record the forward voltage drop of LED under the varying environment temperature, obtain the relation of forward voltage drop and junction temperature
(2) determine the forward voltage drop of LED under the working current condition and the relation of junction temperature, in constant temperature oven, set different temperature, the logical working current of going up, measure the forward voltage drop of LED, then working current is switched to little electric current rapidly, record the forward voltage drop of LED under little electric current, obtain junction temperature according to the forward voltage drop of (1) and the relation of junction temperature, set up the forward voltage drop of LED device under the working current relation of junction temperature therewith in view of the above according to the forward voltage drop value that records under the little electric current.
CN2005100308668A 2005-10-28 2005-10-28 Heat testing method for LED car light grading plate Expired - Fee Related CN1955730B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2005100308668A CN1955730B (en) 2005-10-28 2005-10-28 Heat testing method for LED car light grading plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2005100308668A CN1955730B (en) 2005-10-28 2005-10-28 Heat testing method for LED car light grading plate

Publications (2)

Publication Number Publication Date
CN1955730A CN1955730A (en) 2007-05-02
CN1955730B true CN1955730B (en) 2010-09-01

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101699235B (en) * 2009-11-06 2011-01-12 中山大学 Analysis and test system and test method for junction temperature of semiconductor lamp
CN102193053B (en) * 2010-03-08 2013-10-09 上海时代之光照明电器检测有限公司 Method for measuring relation curve of forward voltage and junction temperature of LED (Light Emitting Diode) in lamp
CN103995223B (en) * 2014-04-11 2016-08-17 清华大学深圳研究生院 A kind of method measuring light emitting diode thermal characteristics and device thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5401099A (en) * 1992-02-10 1995-03-28 Sumitomo Electric Industries, Ltd. Method of measuring junction temperature
CN1101715A (en) * 1994-06-24 1995-04-19 王汶成 Improvement of PN junction temperature sensor working model and linearization new method
CN1306303A (en) * 2001-02-28 2001-08-01 山东大学 Steady-state service life test method by controlling junction temp of transistor
JP2004117111A (en) * 2002-09-25 2004-04-15 Toshiba Corp Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5401099A (en) * 1992-02-10 1995-03-28 Sumitomo Electric Industries, Ltd. Method of measuring junction temperature
CN1101715A (en) * 1994-06-24 1995-04-19 王汶成 Improvement of PN junction temperature sensor working model and linearization new method
CN1306303A (en) * 2001-02-28 2001-08-01 山东大学 Steady-state service life test method by controlling junction temp of transistor
JP2004117111A (en) * 2002-09-25 2004-04-15 Toshiba Corp Semiconductor device

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Y.Xi等.Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method.APPLIED PHYSICS LETTERS85 12.2004,85(12),2163-2165.
Y.Xi等.Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method.APPLIED PHYSICS LETTERS85 12.2004,85(12),2163-2165. *
冯士维等.半导体器件热特性的电学法测量与分析.半导体学报20 5.1999,20(5),358-364.
冯士维等.半导体器件热特性的电学法测量与分析.半导体学报20 5.1999,20(5),358-364. *

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Address after: 201821 Yecheng Road, Jiading District, Jiading District, Shanghai

Patentee after: HUAYU VISION TECHNOLOGY (SHANGHAI) Co.,Ltd.

Address before: 201821 Yecheng Road, Jiading District, Jiading District, Shanghai

Patentee before: SHANGHAI KOITO AUTOMOTIVE LAMP Co.,Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100901

Termination date: 20211028