CN1956165A - 互连中的气隙的横向分布控制 - Google Patents
互连中的气隙的横向分布控制 Download PDFInfo
- Publication number
- CN1956165A CN1956165A CNA2006100984595A CN200610098459A CN1956165A CN 1956165 A CN1956165 A CN 1956165A CN A2006100984595 A CNA2006100984595 A CN A2006100984595A CN 200610098459 A CN200610098459 A CN 200610098459A CN 1956165 A CN1956165 A CN 1956165A
- Authority
- CN
- China
- Prior art keywords
- layer
- interconnection
- stack structure
- air cavity
- hard mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05291485 | 2005-07-08 | ||
EP05291485.0 | 2005-07-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1956165A true CN1956165A (zh) | 2007-05-02 |
CN100541760C CN100541760C (zh) | 2009-09-16 |
Family
ID=37743067
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100984595A Expired - Fee Related CN100541760C (zh) | 2005-07-08 | 2006-07-07 | 互连中的气隙的横向分布控制 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7605071B2 (zh) |
JP (1) | JP2007019508A (zh) |
CN (1) | CN100541760C (zh) |
TW (1) | TW200721379A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101958247A (zh) * | 2009-06-26 | 2011-01-26 | 瑞萨电子株式会社 | 半导体器件处理方法 |
CN107104092A (zh) * | 2011-12-29 | 2017-08-29 | 英特尔公司 | 具有罩层的气隙互连以及形成的方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200721379A (en) * | 2005-07-08 | 2007-06-01 | St Microelectronics Crolles 2 | Controlling lateral distribution of air gaps in interconnects |
JP4929254B2 (ja) * | 2008-09-02 | 2012-05-09 | 株式会社東芝 | 半導体装置の製造方法 |
US8242600B2 (en) * | 2009-05-19 | 2012-08-14 | International Business Machines Corporation | Redundant metal barrier structure for interconnect applications |
US8278730B2 (en) | 2009-10-28 | 2012-10-02 | Infineon Technologies Austria Ag | High voltage resistance coupling structure |
US8456009B2 (en) | 2010-02-18 | 2013-06-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure having an air-gap region and a method of manufacturing the same |
US9431294B2 (en) * | 2014-10-28 | 2016-08-30 | GlobalFoundries, Inc. | Methods of producing integrated circuits with an air gap |
DE112017004206T5 (de) * | 2016-08-25 | 2019-05-29 | Sony Semiconductor Solutions Corporation | Halbleitervorrichtung, bildaufnahmevorrichtung und verfahren zum herstellen einer halbleitervorrichtung |
US11367682B2 (en) * | 2016-09-30 | 2022-06-21 | Intel Corporation | Vias and gaps in semiconductor interconnects |
US10468409B2 (en) * | 2018-03-14 | 2019-11-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | FinFET device with oxidation-resist STI liner structure |
CN117393536A (zh) * | 2020-04-27 | 2024-01-12 | 联华电子股份有限公司 | 半导体元件及其制造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5461003A (en) | 1994-05-27 | 1995-10-24 | Texas Instruments Incorporated | Multilevel interconnect structure with air gaps formed between metal leads |
JP2921759B1 (ja) | 1998-03-31 | 1999-07-19 | 株式会社半導体理工学研究センター | 半導体装置の製造方法 |
US6245658B1 (en) | 1999-02-18 | 2001-06-12 | Advanced Micro Devices, Inc. | Method of forming low dielectric semiconductor device with rigid, metal silicide lined interconnection system |
JP2000269327A (ja) * | 1999-03-15 | 2000-09-29 | Toshiba Corp | 半導体装置およびその製造方法 |
US6306754B1 (en) | 1999-06-29 | 2001-10-23 | Micron Technology, Inc. | Method for forming wiring with extremely low parasitic capacitance |
JP2001217312A (ja) * | 2000-02-07 | 2001-08-10 | Sony Corp | 半導体装置およびその製造方法 |
US6265321B1 (en) | 2000-04-17 | 2001-07-24 | Chartered Semiconductor Manufacturing Ltd. | Air bridge process for forming air gaps |
TWI227043B (en) | 2000-09-01 | 2005-01-21 | Koninkl Philips Electronics Nv | Method of manufacturing a semiconductor device |
TW476135B (en) | 2001-01-09 | 2002-02-11 | United Microelectronics Corp | Manufacture of semiconductor with air gap |
JP4436989B2 (ja) * | 2001-05-23 | 2010-03-24 | パナソニック株式会社 | 半導体装置の製造方法 |
FR2851373B1 (fr) * | 2003-02-18 | 2006-01-13 | St Microelectronics Sa | Procede de fabrication d'un circuit electronique integre incorporant des cavites |
TW200721379A (en) * | 2005-07-08 | 2007-06-01 | St Microelectronics Crolles 2 | Controlling lateral distribution of air gaps in interconnects |
TW200746355A (en) * | 2005-07-12 | 2007-12-16 | St Microelectronics Crolles 2 | Integration control and reliability enhancement of interconnect air cavities |
-
2006
- 2006-07-04 TW TW095124265A patent/TW200721379A/zh unknown
- 2006-07-04 JP JP2006184901A patent/JP2007019508A/ja not_active Ceased
- 2006-07-07 US US11/482,520 patent/US7605071B2/en not_active Expired - Fee Related
- 2006-07-07 CN CNB2006100984595A patent/CN100541760C/zh not_active Expired - Fee Related
-
2009
- 2009-10-19 US US12/581,370 patent/US8110879B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101958247A (zh) * | 2009-06-26 | 2011-01-26 | 瑞萨电子株式会社 | 半导体器件处理方法 |
CN107104092A (zh) * | 2011-12-29 | 2017-08-29 | 英特尔公司 | 具有罩层的气隙互连以及形成的方法 |
Also Published As
Publication number | Publication date |
---|---|
US7605071B2 (en) | 2009-10-20 |
TW200721379A (en) | 2007-06-01 |
US20070037380A1 (en) | 2007-02-15 |
US8110879B2 (en) | 2012-02-07 |
JP2007019508A (ja) | 2007-01-25 |
US20100038797A1 (en) | 2010-02-18 |
CN100541760C (zh) | 2009-09-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1956165A (zh) | 互连中的气隙的横向分布控制 | |
KR100422597B1 (ko) | 다마신 공정에 의해 형성된 캐패시터와 금속배선을 가지는반도체소자 | |
CN1314101C (zh) | 具有混合电介质的可靠低k互连结构 | |
JP5085072B2 (ja) | 導体トラック配列 | |
US8138082B2 (en) | Method for forming metal interconnects in a dielectric material | |
US7553739B2 (en) | Integration control and reliability enhancement of interconnect air cavities | |
US20040232552A1 (en) | Air gap dual damascene process and structure | |
US6383913B1 (en) | Method for improving surface wettability of low k material | |
US20060113675A1 (en) | Barrier material and process for Cu interconnect | |
CN1795552A (zh) | 制造一种多层互连结构的方法 | |
MXPA97007616A (en) | A method to manufacture an integrated circuit structure inter-levels of low constant dielectr | |
CN1761056A (zh) | 互连结构及其形成方法 | |
CN1959976A (zh) | 后端金属化结构及其制造方法 | |
CN1677643A (zh) | 具有含气隙的镶嵌结构的半导体器件的制造方法 | |
KR20100006756A (ko) | 반도체 장치 및 이의 제조 방법 | |
US6875686B2 (en) | Method for fabricating a structure of interconnections comprising an electric insulation including air or vacuum gaps | |
US7510959B2 (en) | Method of manufacturing a semiconductor device having damascene structures with air gaps | |
CN101573787B (zh) | 制造互连结构的方法 | |
US20090115019A1 (en) | Semiconductor device having air gap and method for manufacturing the same | |
CN1467838A (zh) | 具有多层铜线路层的半导体器件及其制造方法 | |
EP1837905A2 (en) | Interconnect structure having cavities in its dielectric portion | |
CN1309042C (zh) | 半导体器件的制造方法 | |
CN1237598C (zh) | 在镶嵌制程中形成金属电容器的方法 | |
EP1742260A2 (en) | Controlling lateral distribution of air gaps in interconnects | |
KR100641498B1 (ko) | 듀얼 다마신 구조를 갖는 금속 배선의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: KONINKL PHILIPS ELECTRONICS NV Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V. |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20110302 Address after: Rawls, France Co-patentee after: Koninkl Philips Electronics NV Patentee after: Stmicroelectronics (Crolles 2) S.A.S. Address before: Rawls, France Co-patentee before: Koninklijke Philips Electronics N.V. Patentee before: Stmicroelectronics (Crolles 2) S.A.S. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090916 Termination date: 20130707 |