CN1961209A - 集成电子传感器 - Google Patents
集成电子传感器 Download PDFInfo
- Publication number
- CN1961209A CN1961209A CNA2005800178446A CN200580017844A CN1961209A CN 1961209 A CN1961209 A CN 1961209A CN A2005800178446 A CNA2005800178446 A CN A2005800178446A CN 200580017844 A CN200580017844 A CN 200580017844A CN 1961209 A CN1961209 A CN 1961209A
- Authority
- CN
- China
- Prior art keywords
- sensor device
- integrated sensor
- sensor
- electrode
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/223—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/121—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid for determining moisture content, e.g. humidity, of the fluid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
Claims (37)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US55856504P | 2004-04-02 | 2004-04-02 | |
US60/558,565 | 2004-04-02 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012102889459A Division CN102854229A (zh) | 2004-04-02 | 2005-03-30 | 集成电子传感器 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1961209A true CN1961209A (zh) | 2007-05-09 |
Family
ID=34962453
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2005800178446A Pending CN1961209A (zh) | 2004-04-02 | 2005-03-30 | 集成电子传感器 |
CN2012102889459A Pending CN102854229A (zh) | 2004-04-02 | 2005-03-30 | 集成电子传感器 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012102889459A Pending CN102854229A (zh) | 2004-04-02 | 2005-03-30 | 集成电子传感器 |
Country Status (5)
Country | Link |
---|---|
US (7) | US7554134B2 (zh) |
EP (1) | EP1730506B1 (zh) |
JP (1) | JP2007535662A (zh) |
CN (2) | CN1961209A (zh) |
WO (1) | WO2005095936A1 (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103115569A (zh) * | 2012-10-22 | 2013-05-22 | 深圳市嘉瀚科技有限公司 | 具有无线传输功能的整体集成式光电传感器 |
CN103512940A (zh) * | 2012-06-21 | 2014-01-15 | Nxp股份有限公司 | 具有传感器的集成电路和制造方法 |
CN104792829A (zh) * | 2014-04-07 | 2015-07-22 | 英诺晶片科技股份有限公司 | 传感器装置 |
CN105675051A (zh) * | 2016-01-12 | 2016-06-15 | 上海申矽凌微电子科技有限公司 | 制造传感器集成电路的方法及使用该方法制造的集成电路 |
CN105742247A (zh) * | 2016-04-07 | 2016-07-06 | 上海申矽凌微电子科技有限公司 | 传感器集成电路的制造方法及使用该方法制造的集成电路 |
CN106082102A (zh) * | 2016-07-12 | 2016-11-09 | 上海申矽凌微电子科技有限公司 | 集成温度湿度气体传感的传感器电路制造方法及传感器 |
CN106124576A (zh) * | 2016-06-28 | 2016-11-16 | 上海申矽凌微电子科技有限公司 | 集成的湿度传感器和多单元气体传感器及其制造方法 |
CN107632044A (zh) * | 2016-07-18 | 2018-01-26 | 意法半导体有限公司 | 小型气体分析器 |
CN108463718A (zh) * | 2015-11-02 | 2018-08-28 | 阿尔法莫斯公司 | 气体传感器控制器 |
US10557812B2 (en) | 2016-12-01 | 2020-02-11 | Stmicroelectronics Pte Ltd | Gas sensors |
Families Citing this family (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1961209A (zh) * | 2004-04-02 | 2007-05-09 | 蒂莫西·卡明斯 | 集成电子传感器 |
US8357958B2 (en) * | 2004-04-02 | 2013-01-22 | Silicon Laboratories Inc. | Integrated CMOS porous sensor |
US7948014B2 (en) * | 2005-05-26 | 2011-05-24 | Nxp B.V. | Electronic device |
EP1929285B1 (en) * | 2005-09-30 | 2017-02-22 | Silicon Laboratories Inc. | An integrated electronic sensor and method for its production |
EP1952134A1 (en) * | 2005-11-17 | 2008-08-06 | Koninklijke Philips Electronics N.V. | Moisture sensor |
US7420365B2 (en) * | 2006-03-15 | 2008-09-02 | Honeywell International Inc. | Single chip MR sensor integrated with an RF transceiver |
US20070235877A1 (en) * | 2006-03-31 | 2007-10-11 | Miriam Reshotko | Integration scheme for semiconductor photodetectors on an integrated circuit chip |
US7700975B2 (en) * | 2006-03-31 | 2010-04-20 | Intel Corporation | Schottky barrier metal-germanium contact in metal-germanium-metal photodetectors |
DE102006019534A1 (de) * | 2006-04-27 | 2007-11-08 | CiS Institut für Mikrosensorik gGmbH | Mikrosensor |
DE102006036646A1 (de) * | 2006-08-03 | 2008-02-07 | Innovative Sensor Technology Ist Ag | Verfahren zur Bestimmung der relativen Feuchte eines Mediums und entsprechende Vorrichtung |
DE102006037243B4 (de) * | 2006-08-09 | 2010-06-02 | Siemens Ag | Netzwerk zur drahtlosen Übertragung von Daten |
KR20080041912A (ko) * | 2006-11-08 | 2008-05-14 | 삼성전자주식회사 | 감도 제어가 가능한 씨모스 이미지 센서의 픽셀 회로 |
US8063469B2 (en) * | 2008-09-30 | 2011-11-22 | Infineon Technologies Ag | On-chip radio frequency shield with interconnect metallization |
US8169059B2 (en) * | 2008-09-30 | 2012-05-01 | Infineon Technologies Ag | On-chip RF shields with through substrate conductors |
US8889548B2 (en) | 2008-09-30 | 2014-11-18 | Infineon Technologies Ag | On-chip RF shields with backside redistribution lines |
US7948064B2 (en) | 2008-09-30 | 2011-05-24 | Infineon Technologies Ag | System on a chip with on-chip RF shield |
US8178953B2 (en) | 2008-09-30 | 2012-05-15 | Infineon Technologies Ag | On-chip RF shields with front side redistribution lines |
US8124953B2 (en) | 2009-03-12 | 2012-02-28 | Infineon Technologies Ag | Sensor device having a porous structure element |
EP2282333B1 (en) | 2009-07-27 | 2013-03-20 | Nxp B.V. | Integrated circuit comprising moisture sensor |
CN101738422B (zh) | 2009-12-23 | 2012-09-05 | 北京宝力马传感技术有限公司 | 一种湿度测量装置及方法 |
KR101665669B1 (ko) * | 2010-03-04 | 2016-10-13 | 삼성전자주식회사 | 반도체 소자 및 그 형성 방법 |
US8927909B2 (en) * | 2010-10-11 | 2015-01-06 | Stmicroelectronics, Inc. | Closed loop temperature controlled circuit to improve device stability |
EP2508881B1 (en) * | 2011-04-04 | 2019-01-23 | Sensirion AG | Testing a humidity sensor |
EP2508874B1 (en) | 2011-04-08 | 2019-06-05 | ams international AG | Capacitive sensor, integrated circuit, electronic device and method |
EP2554980B1 (en) * | 2011-08-03 | 2014-06-25 | Nxp B.V. | Integrated circuit with sensor and method of manufacturing such an integrated circuit |
US9164052B1 (en) | 2011-09-30 | 2015-10-20 | Silicon Laboratories Inc. | Integrated gas sensor |
US8852513B1 (en) | 2011-09-30 | 2014-10-07 | Silicon Laboratories Inc. | Systems and methods for packaging integrated circuit gas sensor systems |
US8669131B1 (en) | 2011-09-30 | 2014-03-11 | Silicon Laboratories Inc. | Methods and materials for forming gas sensor structures |
US8691609B1 (en) | 2011-09-30 | 2014-04-08 | Silicon Laboratories Inc. | Gas sensor materials and methods for preparation thereof |
EP2623969B1 (en) * | 2012-01-31 | 2014-05-14 | Nxp B.V. | Integrated circuit and manufacturing method |
EP2645091B1 (en) * | 2012-03-30 | 2018-10-17 | ams international AG | Integrated circuit comprising a gas sensor |
KR101874839B1 (ko) * | 2012-04-25 | 2018-07-05 | 이플러스이엘렉트로닉 게엠베하 | 습도 센서 장치 |
CN102721429B (zh) * | 2012-06-21 | 2015-06-24 | 昆山诺科传感器集成有限公司 | 频率输出温湿度变送器 |
US9287219B2 (en) | 2012-07-25 | 2016-03-15 | Silicon Laboratories Inc. | Radiation-blocking structures |
EP2720034B1 (en) * | 2012-10-12 | 2016-04-27 | ams International AG | Integrated Circuit comprising a relative humidity sensor and a thermal conductivity based gas sensor |
EP2762865A1 (en) * | 2013-01-31 | 2014-08-06 | Sensirion Holding AG | Chemical sensor and method for manufacturing such a chemical sensor |
US10175188B2 (en) * | 2013-03-15 | 2019-01-08 | Robert Bosch Gmbh | Trench based capacitive humidity sensor |
JP6286845B2 (ja) * | 2013-03-22 | 2018-03-07 | 富士通株式会社 | 熱電素子搭載モジュール及びその製造方法 |
US9234859B2 (en) * | 2013-03-28 | 2016-01-12 | Stmicroelectronics S.R.L. | Integrated device of a capacitive type for detecting humidity, in particular manufactured using a CMOS technology |
US10323980B2 (en) * | 2013-03-29 | 2019-06-18 | Rensselaer Polytechnic Institute | Tunable photocapacitive optical radiation sensor enabled radio transmitter and applications thereof |
EP2793018A1 (en) * | 2013-04-19 | 2014-10-22 | Nxp B.V. | Thermal conductivity based gas sensor |
CN103209002B (zh) * | 2013-04-23 | 2015-12-23 | 中国科学院深圳先进技术研究院 | 用于微型无线传感器节点的数据传输装置 |
CA2912616A1 (en) | 2013-05-17 | 2014-11-20 | fybr | Distributed remote sensing system gateway |
US9652987B2 (en) * | 2013-05-17 | 2017-05-16 | fybr | Distributed remote sensing system component interface |
CN104981688B (zh) * | 2013-05-29 | 2018-07-13 | 罗斯蒙特分析公司 | 具有湿度和温度补偿的硫化氢气体探测器 |
US10177781B2 (en) * | 2013-06-24 | 2019-01-08 | Silicon Laboratories Inc. | Circuit including a switched capacitor bridge and method |
US10160966B2 (en) | 2013-12-12 | 2018-12-25 | Altratech Limited | Sample preparation method and apparatus |
US10746683B2 (en) | 2013-12-12 | 2020-08-18 | Altratech Limited | Capacitive sensor and method of use |
TWI523808B (zh) * | 2014-01-29 | 2016-03-01 | 先技股份有限公司 | 微機電氣體感測裝置 |
KR102238937B1 (ko) * | 2014-07-22 | 2021-04-09 | 주식회사 키 파운드리 | 배선 사이의 중공에 형성된 습도 센서 및 그 제조 방법 |
EP3037810B1 (fr) * | 2014-12-23 | 2017-10-25 | EM Microelectronic-Marin SA | Capteur d'humidite ameliore |
CN104614294A (zh) * | 2014-12-31 | 2015-05-13 | 北京工业大学 | 一种基于Zigbee无线通信技术的分层异构空气质量实时监测模型 |
CN104627947B (zh) * | 2015-02-09 | 2016-02-10 | 江西师范大学 | Cmos湿度传感器及其形成方法 |
EP3062097A1 (fr) * | 2015-02-27 | 2016-08-31 | EM Microelectronic-Marin SA | Capteur d'humidité avec module thermique |
US10909607B2 (en) | 2015-06-05 | 2021-02-02 | Boveda Inc. | Systems, methods and devices for controlling humidity in a closed environment with automatic and predictive identification, purchase and replacement of optimal humidity controller |
US10055781B2 (en) | 2015-06-05 | 2018-08-21 | Boveda Inc. | Systems, methods and devices for controlling humidity in a closed environment with automatic and predictive identification, purchase and replacement of optimal humidity controller |
US9891183B2 (en) * | 2015-07-07 | 2018-02-13 | Nxp B.V. | Breach sensor |
US10670554B2 (en) | 2015-07-13 | 2020-06-02 | International Business Machines Corporation | Reconfigurable gas sensor architecture with a high sensitivity at low temperatures |
KR20180105198A (ko) * | 2016-01-27 | 2018-09-27 | 더 제너럴 하스피탈 코포레이션 | 자기적 전기화학적 감지 |
US10336606B2 (en) * | 2016-02-25 | 2019-07-02 | Nxp Usa, Inc. | Integrated capacitive humidity sensor |
US20170287757A1 (en) * | 2016-03-30 | 2017-10-05 | Robert F. Kwasnick | Damage monitor |
US10083883B2 (en) * | 2016-06-20 | 2018-09-25 | Applied Materials, Inc. | Wafer processing equipment having capacitive micro sensors |
US10254261B2 (en) | 2016-07-18 | 2019-04-09 | Stmicroelectronics Pte Ltd | Integrated air quality sensor that detects multiple gas species |
CN106249093A (zh) * | 2016-07-22 | 2016-12-21 | 上海新时达电气股份有限公司 | 自动分辨并检测电气设备中的预埋传感器的装置及其方法 |
US10480495B2 (en) * | 2017-05-08 | 2019-11-19 | Emerson Climate Technologies, Inc. | Compressor with flooded start control |
EP4219751A1 (en) | 2017-09-20 | 2023-08-02 | Altratech Limited | Diagnostic device and system |
US10453791B2 (en) * | 2018-02-06 | 2019-10-22 | Apple Inc. | Metal-on-metal capacitors |
CN108562697A (zh) * | 2018-03-30 | 2018-09-21 | 歌尔股份有限公司 | 一种室内有害气体监测装置 |
US10804195B2 (en) * | 2018-08-08 | 2020-10-13 | Qualcomm Incorporated | High density embedded interconnects in substrate |
JP7167396B2 (ja) * | 2018-11-16 | 2022-11-09 | ミネベアミツミ株式会社 | 湿度検出装置及び故障判定方法 |
CN209326840U (zh) | 2018-12-27 | 2019-08-30 | 热敏碟公司 | 压力传感器及压力变送器 |
CN111696952A (zh) * | 2019-03-13 | 2020-09-22 | 住友电工光电子器件创新株式会社 | 微波集成电路 |
US11397047B2 (en) * | 2019-04-10 | 2022-07-26 | Minebea Mitsumi Inc. | Moisture detector, moisture detection method, electronic device, and log output system |
KR20220023074A (ko) * | 2020-08-20 | 2022-03-02 | 삼성전자주식회사 | 반도체 패키지 테스트 장치 및 방법 |
US11855019B2 (en) | 2021-02-11 | 2023-12-26 | Globalfoundries Singapore Pte. Ltd. | Method of forming a sensor device |
CN113252734B (zh) * | 2021-06-22 | 2021-09-24 | 电子科技大学 | 一种电阻型气体传感器柔性电路及气体浓度计算方法 |
Family Cites Families (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4057823A (en) * | 1976-07-02 | 1977-11-08 | International Business Machines Corporation | Porous silicon dioxide moisture sensor and method for manufacture of a moisture sensor |
GB1586117A (en) * | 1977-06-22 | 1981-03-18 | Rosemount Eng Co Ltd | Solid state sensor element |
US4165642A (en) * | 1978-03-22 | 1979-08-28 | Lipp Robert J | Monolithic CMOS digital temperature measurement circuit |
US4419021A (en) * | 1980-02-04 | 1983-12-06 | Matsushita Electric Industrial Co., Ltd. | Multi-functional sensing or measuring system |
JPS58111747A (ja) | 1981-12-25 | 1983-07-02 | Yamatake Honeywell Co Ltd | ガスセンサおよびその製造方法 |
CA1216330A (en) * | 1983-02-07 | 1987-01-06 | Junji Manaka | Low power gas detector |
US4656463A (en) * | 1983-04-21 | 1987-04-07 | Intelli-Tech Corporation | LIMIS systems, devices and methods |
US4542640A (en) * | 1983-09-15 | 1985-09-24 | Clifford Paul K | Selective gas detection and measurement system |
JPS6066145A (ja) * | 1983-09-20 | 1985-04-16 | Omron Tateisi Electronics Co | 外部雰囲気検知装置 |
JPS60242354A (ja) * | 1984-05-16 | 1985-12-02 | Sharp Corp | Fet型センサ |
JPS6157847A (ja) * | 1984-08-29 | 1986-03-24 | Sharp Corp | 電界効果型湿度センサ |
US4931381A (en) * | 1985-08-12 | 1990-06-05 | Hoechst Celanese Corporation | Image reversal negative working O-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment |
GB8606045D0 (en) * | 1986-03-12 | 1986-04-16 | Emi Plc Thorn | Gas sensitive device |
JPH06105232B2 (ja) * | 1986-07-17 | 1994-12-21 | 株式会社東芝 | 絶縁ゲ−ト電界効果型感湿素子 |
JPS63103957A (ja) * | 1986-10-20 | 1988-05-09 | Seiko Epson Corp | 湿度検出器 |
US4793181A (en) * | 1987-06-02 | 1988-12-27 | Djorup Robert Sonny | Constant temperature sorption hygrometer |
US4831381A (en) * | 1987-08-11 | 1989-05-16 | Texas Instruments Incorporated | Charge redistribution A/D converter with reduced small signal error |
JPH01196558A (ja) * | 1988-02-01 | 1989-08-08 | Takara Kogyo Kk | 湿度センサ |
US4876890A (en) * | 1988-06-29 | 1989-10-31 | Uop | Moisture sensing apparatus and method |
JPH02232901A (ja) * | 1989-03-07 | 1990-09-14 | Seiko Epson Corp | 湿度センサ |
US5120421A (en) * | 1990-08-31 | 1992-06-09 | The United States Of America As Represented By The United States Department Of Energy | Electrochemical sensor/detector system and method |
JP3041491B2 (ja) | 1991-06-06 | 2000-05-15 | 株式会社トーキン | 湿度センサ |
CA2066929C (en) * | 1991-08-09 | 1996-10-01 | Katsuji Kimura | Temperature sensor circuit and constant-current circuit |
US5481129A (en) * | 1991-10-30 | 1996-01-02 | Harris Corporation | Analog-to-digital converter |
DE19623517C1 (de) * | 1996-06-12 | 1997-08-21 | Siemens Ag | MOS-Transistor für biotechnische Anwendungen |
US6399970B2 (en) * | 1996-09-17 | 2002-06-04 | Matsushita Electric Industrial Co., Ltd. | FET having a Si/SiGeC heterojunction channel |
DE19641777C2 (de) * | 1996-10-10 | 2001-09-27 | Micronas Gmbh | Verfahren zum Herstellen eines Sensors mit einer Metallelektrode in einer MOS-Anordnung |
GB2321336B (en) * | 1997-01-15 | 2001-07-25 | Univ Warwick | Gas-sensing semiconductor devices |
US5878332A (en) * | 1997-02-07 | 1999-03-02 | Eic Enterprises Corporation | Multiple frequency RF transceiver |
EP0882978A1 (en) * | 1997-06-04 | 1998-12-09 | STMicroelectronics S.r.l. | Integrated semi-conductor device comprising a chemoresistive gas microsensor and manufacturing process thereof |
DE69726718T2 (de) * | 1997-07-31 | 2004-10-07 | St Microelectronics Srl | Verfahren zum Herstellen hochempfindlicher integrierter Beschleunigungs- und Gyroskopsensoren und Sensoren, die derartig hergestellt werden |
JP3514361B2 (ja) * | 1998-02-27 | 2004-03-31 | Tdk株式会社 | チップ素子及びチップ素子の製造方法 |
US6288442B1 (en) * | 1998-09-10 | 2001-09-11 | Micron Technology, Inc. | Integrated circuit with oxidation-resistant polymeric layer |
JP2000299438A (ja) * | 1999-04-15 | 2000-10-24 | Hitachi Ltd | 半導体集積回路 |
DE19924906C2 (de) * | 1999-05-31 | 2001-05-31 | Daimler Chrysler Ag | Halbleiter-Gassensor, Gassensorsystem und Verfahren zur Gasanalyse |
US6690569B1 (en) * | 1999-12-08 | 2004-02-10 | Sensirion A/G | Capacitive sensor |
US6673644B2 (en) * | 2001-03-29 | 2004-01-06 | Georgia Tech Research Corporation | Porous gas sensors and method of preparation thereof |
US6580600B2 (en) * | 2001-02-20 | 2003-06-17 | Nippon Soken, Inc. | Capacitance type humidity sensor and manufacturing method of the same |
US6632478B2 (en) * | 2001-02-22 | 2003-10-14 | Applied Materials, Inc. | Process for forming a low dielectric constant carbon-containing film |
US6484559B2 (en) * | 2001-02-26 | 2002-11-26 | Lucent Technologies Inc. | Odor sensing with organic transistors |
US6348407B1 (en) * | 2001-03-15 | 2002-02-19 | Chartered Semiconductor Manufacturing Inc. | Method to improve adhesion of organic dielectrics in dual damascene interconnects |
US20030010988A1 (en) * | 2001-07-11 | 2003-01-16 | Motorola, Inc. | Structure and method for fabricating semiconductor structures with integrated optical components and controller |
JP4501320B2 (ja) * | 2001-07-16 | 2010-07-14 | 株式会社デンソー | 容量式湿度センサ |
AU2002341803A1 (en) * | 2001-09-24 | 2003-04-07 | Amberwave Systems Corporation | Rf circuits including transistors having strained material layers |
US6673664B2 (en) * | 2001-10-16 | 2004-01-06 | Sharp Laboratories Of America, Inc. | Method of making a self-aligned ferroelectric memory transistor |
US6724612B2 (en) * | 2002-07-09 | 2004-04-20 | Honeywell International Inc. | Relative humidity sensor with integrated signal conditioning |
JP3869815B2 (ja) * | 2003-03-31 | 2007-01-17 | Necエレクトロニクス株式会社 | 半導体集積回路装置 |
US7053425B2 (en) * | 2003-11-12 | 2006-05-30 | General Electric Company | Gas sensor device |
JP4065855B2 (ja) * | 2004-01-21 | 2008-03-26 | 株式会社日立製作所 | 生体および化学試料検査装置 |
JP3994975B2 (ja) * | 2004-02-27 | 2007-10-24 | 株式会社デンソー | 容量式湿度センサ |
JP4553611B2 (ja) * | 2004-03-15 | 2010-09-29 | 三洋電機株式会社 | 回路装置 |
CN1961209A (zh) | 2004-04-02 | 2007-05-09 | 蒂莫西·卡明斯 | 集成电子传感器 |
US7096716B2 (en) * | 2004-11-03 | 2006-08-29 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Integration of thermal regulation and electronic fluid sensing |
EP1767934B1 (en) * | 2005-09-21 | 2007-12-05 | Adixen Sensistor AB | Hydrogen gas sensitive semiconductor sensor |
EP1929285B1 (en) * | 2005-09-30 | 2017-02-22 | Silicon Laboratories Inc. | An integrated electronic sensor and method for its production |
-
2005
- 2005-03-30 CN CNA2005800178446A patent/CN1961209A/zh active Pending
- 2005-03-30 CN CN2012102889459A patent/CN102854229A/zh active Pending
- 2005-03-30 EP EP05718823.7A patent/EP1730506B1/en not_active Not-in-force
- 2005-03-30 WO PCT/IE2005/000033 patent/WO2005095936A1/en active Application Filing
- 2005-03-30 US US11/092,725 patent/US7554134B2/en active Active
- 2005-03-30 JP JP2007505733A patent/JP2007535662A/ja active Pending
-
2009
- 2009-05-28 US US12/453,965 patent/US8648395B2/en not_active Expired - Fee Related
-
2010
- 2010-12-22 US US12/975,846 patent/US8507954B2/en not_active Expired - Fee Related
- 2010-12-23 US US12/977,358 patent/US8497531B2/en not_active Expired - Fee Related
- 2010-12-23 US US12/977,370 patent/US8507955B2/en not_active Expired - Fee Related
-
2012
- 2012-06-12 US US13/494,392 patent/US20120256236A1/en not_active Abandoned
-
2015
- 2015-06-24 US US14/748,303 patent/US20150316498A1/en not_active Abandoned
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9606079B2 (en) | 2012-06-21 | 2017-03-28 | Nxp B.V. | Integrated circuit with sensors and manufacturing method |
CN103512940A (zh) * | 2012-06-21 | 2014-01-15 | Nxp股份有限公司 | 具有传感器的集成电路和制造方法 |
CN103512940B (zh) * | 2012-06-21 | 2016-02-24 | Nxp股份有限公司 | 具有传感器的集成电路和制造方法 |
CN103115569B (zh) * | 2012-10-22 | 2016-05-04 | 深圳市嘉瀚科技有限公司 | 具有无线传输功能的整体集成式光电传感器 |
CN103115569A (zh) * | 2012-10-22 | 2013-05-22 | 深圳市嘉瀚科技有限公司 | 具有无线传输功能的整体集成式光电传感器 |
CN104792829A (zh) * | 2014-04-07 | 2015-07-22 | 英诺晶片科技股份有限公司 | 传感器装置 |
TWI555977B (zh) * | 2014-04-07 | 2016-11-01 | 英諾晶片科技股份有限公司 | 感測器裝置 |
CN108463718B (zh) * | 2015-11-02 | 2021-04-13 | 阿尔法莫斯公司 | 气体传感器控制器 |
CN108463718A (zh) * | 2015-11-02 | 2018-08-28 | 阿尔法莫斯公司 | 气体传感器控制器 |
CN105675051A (zh) * | 2016-01-12 | 2016-06-15 | 上海申矽凌微电子科技有限公司 | 制造传感器集成电路的方法及使用该方法制造的集成电路 |
CN105675051B (zh) * | 2016-01-12 | 2018-06-05 | 上海申矽凌微电子科技有限公司 | 制造传感器集成电路的方法及使用该方法制造的集成电路 |
CN105742247B (zh) * | 2016-04-07 | 2019-07-26 | 上海申矽凌微电子科技有限公司 | 传感器集成电路的制造方法及使用该方法制造的集成电路 |
CN105742247A (zh) * | 2016-04-07 | 2016-07-06 | 上海申矽凌微电子科技有限公司 | 传感器集成电路的制造方法及使用该方法制造的集成电路 |
CN106124576A (zh) * | 2016-06-28 | 2016-11-16 | 上海申矽凌微电子科技有限公司 | 集成的湿度传感器和多单元气体传感器及其制造方法 |
CN106124576B (zh) * | 2016-06-28 | 2018-12-18 | 上海申矽凌微电子科技有限公司 | 集成的湿度传感器和多单元气体传感器及其制造方法 |
CN106082102B (zh) * | 2016-07-12 | 2017-12-15 | 上海申矽凌微电子科技有限公司 | 集成温度湿度气体传感的传感器电路制造方法及传感器 |
CN106082102A (zh) * | 2016-07-12 | 2016-11-09 | 上海申矽凌微电子科技有限公司 | 集成温度湿度气体传感的传感器电路制造方法及传感器 |
CN107632044A (zh) * | 2016-07-18 | 2018-01-26 | 意法半导体有限公司 | 小型气体分析器 |
US10429330B2 (en) | 2016-07-18 | 2019-10-01 | Stmicroelectronics Pte Ltd | Gas analyzer that detects gases, humidity, and temperature |
US10557812B2 (en) | 2016-12-01 | 2020-02-11 | Stmicroelectronics Pte Ltd | Gas sensors |
US11543378B2 (en) | 2016-12-01 | 2023-01-03 | Stmicroelectronics Pte Ltd | Gas sensors |
Also Published As
Publication number | Publication date |
---|---|
US20120256236A1 (en) | 2012-10-11 |
US20150316498A1 (en) | 2015-11-05 |
US20110089472A1 (en) | 2011-04-21 |
US8497531B2 (en) | 2013-07-30 |
US8507955B2 (en) | 2013-08-13 |
US20110089439A1 (en) | 2011-04-21 |
US20090273009A1 (en) | 2009-11-05 |
US20110098937A1 (en) | 2011-04-28 |
US8507954B2 (en) | 2013-08-13 |
WO2005095936A1 (en) | 2005-10-13 |
US8648395B2 (en) | 2014-02-11 |
EP1730506A1 (en) | 2006-12-13 |
US7554134B2 (en) | 2009-06-30 |
JP2007535662A (ja) | 2007-12-06 |
US20050218465A1 (en) | 2005-10-06 |
CN102854229A (zh) | 2013-01-02 |
EP1730506B1 (en) | 2018-09-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1961209A (zh) | 集成电子传感器 | |
US8007167B2 (en) | Integrated electronic sensor | |
US9304104B2 (en) | Ion sensitive field effect transistor | |
US7157054B2 (en) | Membrane type gas sensor and method for manufacturing membrane type gas sensor | |
US9952171B2 (en) | Gas sensor package | |
JP4065855B2 (ja) | 生体および化学試料検査装置 | |
US6580600B2 (en) | Capacitance type humidity sensor and manufacturing method of the same | |
TW201225304A (en) | Chemically sensitive sensor with lightly doped drains | |
CN1737554A (zh) | 湿度传感器和具有湿度检测功能的组合传感器 | |
CN101048656A (zh) | 用于检测和/或测量环境中所含电荷浓度的传感器,对应的用途及其制造方法 | |
US7355200B2 (en) | Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor | |
CN107064255B (zh) | 一种基于CMOS工艺的复合电极式pH传感器及其制备方法 | |
Prodromakis et al. | Exploiting CMOS technology to enhance the performance of ISFET sensors | |
Zehfroosh et al. | High-sensitivity ion-selective field-effect transistors using nanoporous silicon | |
US7939022B2 (en) | Integration of colorimetric transducers and detector | |
Oprea et al. | Flip-chip suspended gate field effect transistors for ammonia detection | |
Lai et al. | A CMOS biocompatible charge detector for biosensing applications | |
IES20050180A2 (en) | An integrated electronic sensor | |
CN108155179B (zh) | 一种具有气体检测功能半导体器件 | |
IE84228B1 (en) | An integrated electronic sensor | |
IE20050180U1 (en) | An integrated electronic sensor | |
Chiang et al. | Sensing characteristics of ISFET based on AlN thin film | |
Graf et al. | Monolithic metal-oxide microsensor system in industrial CMOS technology | |
IE84764B1 (en) | An integrated electronic sensor | |
CN1643700A (zh) | 侦测器装置、电荷载体之侦测方法、及侦测电荷之ono场效应晶体管之使用 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: CHIP SENSOR CO., LTD. Free format text: FORMER OWNER: TIMOTHY CUMMINGS Effective date: 20100624 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: COUNTY CLARE, IRELAND TO: COUNTY LIMERICK, IRELAND |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20100624 Address after: Limerick Applicant after: Chip sensor Co Ltd Address before: Claire County, Ireland Applicant before: cummings Timothy |
|
ASS | Succession or assignment of patent right |
Owner name: SILICON LAB INC. Free format text: FORMER OWNER: CHIP + SENSOR CO., LTD. Effective date: 20121106 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20121106 Address after: American Texas Applicant after: Silicon Lab Inc. Address before: Limerick Applicant before: Chip sensor Co Ltd |