CN2690724Y - High brightness luminous diode lighting device - Google Patents
High brightness luminous diode lighting device Download PDFInfo
- Publication number
- CN2690724Y CN2690724Y CNU2004200433090U CN200420043309U CN2690724Y CN 2690724 Y CN2690724 Y CN 2690724Y CN U2004200433090 U CNU2004200433090 U CN U2004200433090U CN 200420043309 U CN200420043309 U CN 200420043309U CN 2690724 Y CN2690724 Y CN 2690724Y
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- high brightness
- lighting device
- led lighting
- circuit
- brightness led
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Abstract
The utility model relates to a luminous diode lighting device with high brightness, which comprises a reflecting bowl (2), a power supply pin (3) and a circuit board (8). The circuits of the circuit board (8) comprise a full wave circuit (6), a constant-current adjusting resistor (5) and a light emitting diode (1) which are connected in sequence and in series. The inner part of the light emitting diode (1) comprises a high-brightness chip material (4) which is shallow inserted and packed and comprises Gallium nitride or Aluminium phosphide Gallium Indium, and the reflecting bowl (2) forms a paraboloid shape. The inner surface of the reflecting bowl (2) is provided with a filming with high reflectance and the concave-convex patterns. Compared with the prior art, the brightness of the luminous diode lighting device with high brightness is significantly high.
Description
Technical field
The utility model relates to lighting device, relates in particular to adopt light emitting diode to make the lighting device of illuminator.
Background technology
The LED of prior art (light emitting diode) lighting device, the similar screw-socket bulb of structural entity shape such as disclosed LED bulb in Chinese patent ZL 99239628.X, in housing, be provided with circuit board, the luminous tube of several series connection is housed on the plate, these adopt light emitting diode as the lighting device of illuminator conventional relatively halogen tungsten lamp or incandescent lamp, though have the power consumptive province, produce characteristics such as heat is little, also have the not enough deficiency of brightness: the light efficiency of these LED lighting devices is mostly in the 10-20 lumens/watt.
Summary of the invention
The technical problems to be solved in the utility model is to improve the brightness of light emitting diode illuminating apparatus.
The technical scheme in the invention for solving the above technical problem is, manufacture and design a kind of high brightness LED lighting device, comprise reflector, power pin and circuit board, circuit comprises full-wave rectifying circuit, constant current adjustment resistance and the light emitting diode of series connection successively on the described circuit board, and comprises the high brightness wafer material of shallow slotting encapsulation in the described light emitting diode.
Described high brightness wafer material comprises gallium nitride, or AlGaInP.
Described reflector be shaped as paraboloidal, its inner surface has the plated film of high reflectance, and can irregular decorative pattern.
Compare with prior art, high brightness LED lighting device of the present utility model, its brightness is high.
Description of drawings
Fig. 1 looks cutaway view for the master of the most preferred embodiment of the utility model high brightness LED lighting device.
Fig. 2 is the vertical view of high brightness LED lighting device shown in Figure 1.
Fig. 3 is a light-emitting diode structure schematic diagram among the embodiment.
Fig. 4 is that light emitting diode series connection circuit number is circuit diagram for the moment among the embodiment.
Fig. 5 be among the embodiment light emitting diode series connection circuit number greater than circuit diagram for the moment.
Fig. 6 is the circuit diagram when increasing reduction voltage circuit among Fig. 4.
The specific embodiment
Be described in further detail below in conjunction with the most preferred embodiment shown in the accompanying drawing.
The utility model high brightness LED lighting device shown in Fig. 1 to 6, comprise reflector 2, power pin 3 and circuit board 8, circuit comprises full-wave rectifying circuit 6, constant current adjustment resistance 5 and the light emitting diode 1 of series connection successively on the described circuit board 8, and comprises the high brightness wafer material 4 of shallow slotting encapsulation in the described light emitting diode 1.
Described high brightness wafer material 4 comprises gallium nitride, or AlGaInP.
Described reflector 2 is made by materials such as glass, pottery, metals, is shaped as paraboloidal, and its inner surface has the plated film of high reflectance, and can irregular decorative pattern, to improve the uniformity of light.
Owing to select super bright wafer and shallow slotting packaging technology for use, adopt epoxy sealing, the optic angle degree that makes LED send is very little, be similar to directional light, the bowl-shape reflector that cooperates high reflectance again, make the utility model device luminous efficiency can reach 50 lumens/watt, can satisfy the illumination of high brightness needs long-distance transmissions and use.
The shallow slotting packaging technology of above-mentioned what is called is meant present relatively general LED packaging technology, and the position of wafer material 4 in light emitting diode 1 housing be near the bottom, thereby can be so that the optic angle degree that whole light emitting diode 1 sends diminishes, and brightness increases.
As shown in Figure 2, limited because of the light intensity of single LEDs, the utility model is assemblied on the circuit board 8 by many light emitting diodes 1, constitutes illuminator jointly; Then the circuit board 8 that assembles is put into reflector 2.
As shown in Figs. 4-6, external power source 7 provides working power for full-wave rectifying circuit 6, constant current adjustment resistance 5 and the circuit of LED of series connection successively.Adopt full-wave rectifying circuit 6 can avoid, and cause burning out of components and parts, make whole light emitting diode illuminating apparatus be easy to use because of external power source polarity connects instead.Resistance 5 can guarantee have when beating among a small circle when external power, and the electric current of light emitting diode 1 changes can be very small, thereby can guarantee that light emitting diode 1 works reliably.
As shown in Figure 6,6 of external power source 7 and full-wave rectifying circuits are serially connected with the reduction voltage circuit that resistance 10 and electric capacity 9 compose in parallel, adopt this circuit structure to make the working power that adopts alternating current 220V to entire lighting device, thereby entire lighting device can be replaced halogen tungsten lamp or incandescent lamp by most application scenarios.
This light emitting diode illuminating apparatus can be done lampion in each emporium, can avoid adopting traditional halogen tungsten etc. owing to produce the puzzlement that environment temperature that too much heat causes raises; Can use in mine, traditional relatively incandescent lamp can life-saving, tighten security, and alleviates workman's heavy burden; Can do aboard and read Deng, because the tungsten filament in the tungsten lamp can be crisp because of thermal change, take off/shake is disconnected easily when landing, need often to change, and light emitting diode is to adopt epoxy sealing, but against shock.
The most preferred embodiment of the above is intended to specify thinking of the present utility model: the LED that adopts high brightness obtains the LED lighting device that brightness greatly improves as illuminator.The enforcement of the utility model is not limited to the disclosed mode of above most preferred embodiment, and is all based on above-mentioned mentality of designing, simply deduces and replace, and the concrete LED lighting device that obtains all belongs to enforcement of the present utility model.
Claims (10)
1, a kind of high brightness LED lighting device, comprise reflector (2), power pin (3) and circuit board (8), described circuit board (8) is gone up full-wave rectifying circuit (6), constant current adjustment resistance (5) and the light emitting diode (1) that circuit comprises series connection successively, it is characterized in that:
The high brightness wafer material (4) that comprises shallow slotting encapsulation in the described light emitting diode (1).
2, high brightness LED lighting device as claimed in claim 1 is characterized in that: described high brightness wafer material (4) comprises gallium nitride.
3, high brightness LED lighting device as claimed in claim 1 is characterized in that: described high brightness wafer material (4) comprises AlGaInP.
4, high brightness LED lighting device as claimed in claim 1 is characterized in that: described reflector (2) inner surface has the plated film of high reflectance.
5, high brightness LED lighting device as claimed in claim 1 is characterized in that: described reflector (2) be shaped as paraboloidal.
6, high brightness LED lighting device as claimed in claim 5 is characterized in that: the irregular decorative pattern of inner surface of described reflector (2).
7, high brightness LED lighting device as claimed in claim 1 is characterized in that: described circuit board (8) is gone up circuit and is also comprised the reduction voltage circuit that is serially connected with between power pin (3) and the full-wave rectifying circuit (6).
8, high brightness LED lighting device as claimed in claim 7 is characterized in that: described reduction voltage circuit comprises the parallel circuit of being made up of resistance (10) and electric capacity (9).
9, as the arbitrary described high brightness LED lighting device of claim 1 to 8, it is characterized in that: the series circuit number that resistance (5) and light emitting diode (1) composition are adjusted in described constant current is one.
10, as the arbitrary described high brightness LED lighting device of claim 1 to 8, it is characterized in that: described constant current is adjusted the series circuit number of resistance (5) and light emitting diode (1) composition greater than one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2004200433090U CN2690724Y (en) | 2004-03-05 | 2004-03-05 | High brightness luminous diode lighting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2004200433090U CN2690724Y (en) | 2004-03-05 | 2004-03-05 | High brightness luminous diode lighting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2690724Y true CN2690724Y (en) | 2005-04-06 |
Family
ID=34671641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2004200433090U Expired - Fee Related CN2690724Y (en) | 2004-03-05 | 2004-03-05 | High brightness luminous diode lighting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2690724Y (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010063173A1 (en) * | 2008-12-05 | 2010-06-10 | 弘凯光电(深圳)有限公司 | Led package structure |
| CN102116928A (en) * | 2009-12-31 | 2011-07-06 | 麦克奥迪实业集团有限公司 | LED (light-emitting diode) illuminator directly used on standard halogen lamp holder |
| US8066909B2 (en) | 2004-06-10 | 2011-11-29 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US8070983B2 (en) | 2004-06-10 | 2011-12-06 | Seoul Semiconductor Co., Ltd. | Luminescent material |
| US8188492B2 (en) | 2006-08-29 | 2012-05-29 | Seoul Semiconductor Co., Ltd. | Light emitting device having plural light emitting diodes and at least one phosphor for emitting different wavelengths of light |
| US8308980B2 (en) | 2004-06-10 | 2012-11-13 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US8431954B2 (en) | 2007-08-28 | 2013-04-30 | Seoul Semiconductor Co., Ltd. | Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors |
| US8501040B2 (en) | 2007-08-22 | 2013-08-06 | Seoul Semiconductor Co., Ltd. | Non-stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same |
| US8847254B2 (en) | 2005-12-15 | 2014-09-30 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US9312246B2 (en) | 2006-03-31 | 2016-04-12 | Seoul Semiconductor Co., Ltd. | Light emitting device and lighting system having the same |
-
2004
- 2004-03-05 CN CNU2004200433090U patent/CN2690724Y/en not_active Expired - Fee Related
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8066909B2 (en) | 2004-06-10 | 2011-11-29 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US8070983B2 (en) | 2004-06-10 | 2011-12-06 | Seoul Semiconductor Co., Ltd. | Luminescent material |
| US8252203B2 (en) | 2004-06-10 | 2012-08-28 | Seoul Semiconductor Co., Ltd. | Luminescent material |
| US8308980B2 (en) | 2004-06-10 | 2012-11-13 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US8900482B2 (en) | 2004-06-10 | 2014-12-02 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US8883040B2 (en) | 2004-06-10 | 2014-11-11 | Seoul Semiconductor Co., Ltd. | Luminescent material |
| US8847254B2 (en) | 2005-12-15 | 2014-09-30 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US11322484B2 (en) | 2006-03-31 | 2022-05-03 | Seoul Semiconductor Co., Ltd. | Light emitting device and lighting system having the same |
| US9576939B2 (en) | 2006-03-31 | 2017-02-21 | Seoul Semiconductor Co., Ltd. | Light emitting device and lighting system having the same |
| US9312246B2 (en) | 2006-03-31 | 2016-04-12 | Seoul Semiconductor Co., Ltd. | Light emitting device and lighting system having the same |
| US8188492B2 (en) | 2006-08-29 | 2012-05-29 | Seoul Semiconductor Co., Ltd. | Light emitting device having plural light emitting diodes and at least one phosphor for emitting different wavelengths of light |
| US8674380B2 (en) | 2006-08-29 | 2014-03-18 | Seoul Semiconductor Co., Ltd. | Light emitting device having plural light emitting diodes and plural phosphors for emitting different wavelengths of light |
| US8501040B2 (en) | 2007-08-22 | 2013-08-06 | Seoul Semiconductor Co., Ltd. | Non-stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same |
| US8431954B2 (en) | 2007-08-28 | 2013-04-30 | Seoul Semiconductor Co., Ltd. | Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors |
| WO2010063173A1 (en) * | 2008-12-05 | 2010-06-10 | 弘凯光电(深圳)有限公司 | Led package structure |
| CN102116928A (en) * | 2009-12-31 | 2011-07-06 | 麦克奥迪实业集团有限公司 | LED (light-emitting diode) illuminator directly used on standard halogen lamp holder |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050406 Termination date: 20130305 |