CN87106283A - 化学汽相淀积装置 - Google Patents

化学汽相淀积装置 Download PDF

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Publication number
CN87106283A
CN87106283A CN87106283.6A CN87106283A CN87106283A CN 87106283 A CN87106283 A CN 87106283A CN 87106283 A CN87106283 A CN 87106283A CN 87106283 A CN87106283 A CN 87106283A
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China
Prior art keywords
supporting apparatus
substrate
substrate supporting
cvd
reaction chamber
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CN87106283.6A
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CN1020290C (zh
Inventor
高山徹
犬岛
尾高政一
林茂则
広濑直樹
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority claimed from JP21332486A external-priority patent/JPS6369976A/ja
Priority claimed from JP61213323A external-priority patent/JPS6367727A/ja
Priority claimed from JP21332586A external-priority patent/JPS6369977A/ja
Priority claimed from JP62141050A external-priority patent/JPS63307279A/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN87106283A publication Critical patent/CN87106283A/zh
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • Y10S148/00—Metal treatment
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

Abstract

一种改进的用于沉积均匀薄膜的CVD装置。该装置包括一个反应室，一个底物支持器和多个用于光化CVD的光源，或一对用于等离子体CVD的电极。底物支持器是被光源包围的圆筒形底物加热车，并且是由驱动装置带动绕轴自转。利用这种配置，应用光或等离子体可使装在加热车上的底物及其周围，从而使整个待覆涂表面均匀地进行激发。

Description

本发明涉及光化增强化学汽相淀积装置。
可采用多种化学汽相淀积（CVD）方法，如在底物上淀积薄膜的气压化学汽相淀积（APCVD）、低压化学汽相淀积（LPCVD）、等离子体化学汽相淀积（plasma    CVD）、热化学汽相淀积（thermal    CVD）等。虽然这些方法各有特点，但每种方法实施的温度一般是相当高的，如此高温法是不适于在铝电极设备形成钝化膜。
由于光化增强CVD法可在较低温度下实施，因而引起人们的兴趣。这种方法利用光能，即进行光学反应，例如在用硅烷和氨的光化CVD法的情况下，汞原子受波长2537 紫外线照射激发，按下述反应式在底物上淀积氮化硅薄膜：
在以上反应式中，x、y和z应适当地选择。
图1是光化CVD装置的断面图，它是由本发明前的发明者设计的。为助于理解本发明背景，简要地解释一下这个装置。图中，该装置包括反应室31、光源室39和紫外线源41。在各个光源室39之间，装有底物加热车（cart）35，它能朝垂直于图面方向移动。该加热车35提供加热器37，用于加热安装在面向光源室39的加热车35外表面上的底物，使底物33的温度上升至约200℃，该温度适于形成氮化硅薄膜。反应气体在几个托的压力下循于反应室31中，来自光源41的辐射光通过石英窗47照射反应气体，数字45表示电极，由于该电极与作为另一电极的加热车而产生放电，沉积在石英窗47表面的不需要的产物，可通过溅射除去。
然而，就这种装置而言，沉积薄膜的厚度取决于光源和底物位置之间的空间关系。即CVD方法的产物在较强光照射的位置沉积较厚。一般说来，薄膜厚度变化的容许偏差约10%，此外，石英窗47的厚度必须足以承受反应室31内与光源室39（冷却气在其中循环）之间的差压，该差压可能引起冷却气体从光源室39向反应室31的泄漏。另外一种方法是，可为光源室设置特殊的冷却系统，使光源室的压力降低，因此减小差压。此外，当要求加热车35和反应室31之间进行放电，并通过溅射除去沉积在光源室窗上不需要的薄膜时，这种放电往往导致偏离光源窗。由于这种原因，必须装置特殊的电极45以致使装置的尺寸扩大。
关于用CVD沉积薄膜的不均匀性，在等离子体CVD情况下也是个问题。等离子体的能量似乎取决于底物和一对放电电极之间的关系。因此等离子体CVD也需有在涂覆底物上形成均匀淀积的条件。
因此本发明的一个目的为提供能沉积厚度均匀薄膜的CVD装置。
本发明的另一个目的为提供能沉积优质薄膜的CVD装置。
本发明的再一个目的为提供一种较经济的CVD装置。
本发明的又一个目的为提供一种小型的CVD装置。
图1是光化CVD装置实施例的断面图。
图2是本发明一个实施例的断面图。
图3是沿图2的Ⅲ-Ⅲ线所取的断面图。
图4是本发明的另一个实施例的断面图。
图5（A）至5（C）表示装在具有6、12和24边正多边形截面的棱柱形底物支持器上底物的光照度分布图解示意图。
图6（A）至6（C）和图7表示本发明CVD实施例方法的剖面图。
参照图2和图3，说明本发明的光化增强CVD装置。图中，装置1包括反应室3;用作底物支持器的六角形加热车7，具有六个侧面，其面上置有底物15;带有电机21的驱动装置9，用来使加热车7绕轴自转;在反应室3内加热车7周围等角间隔的每一端装有许多石英管17，管子的另一端是封闭的;分别在石英管内密封的汞灯19;沿轴向排列的卤灯加热器23;还有反应气体引入系统11和抽空系统13。像氮气一类冷却气体借助于再循环装置29在石英管19内循环。在加热车7的每一面上，可安置两个底物，每个长35厘米、宽30厘米，因此在加热车7上持有12个底物。最好加热车可以驱动装置拆卸，使底物能在反应室3的外面装置。
接着解释装置内的反应。首先，将装在加热车7上的12个底物放入反应室3，用抽空系统13将反应室3抽真空至10-2～10-6托以后，将反应气体在约3托气压下从引入系统11输入，同时，通过加热器23将底物15加热至约200℃。然后，由汞灯19包围的加热车7被驱动装置9带动，以2转/分旋转，并接受灯19的紫外线照射，随后，由光能激发的反应产物沉积在底物15上，而沉积在石英管19上不希望有的产物，借助于加热车7和反应室3之间的放电，经溅射除去。例如可按下述反应式实施光化增强CVD法：
现在参照图4，说明本发明的另一实施例。这个实施例与上述实施例相同，所不同的是加热车的侧面数，以及供给的电极49是以圆筒形金属丝网形式配置在加热车7和反应室3之间。加热车具有12个侧面，每一面可持有2个底物。电极49用于在电极本身和加热车7之间经放电产生等离子气体，以及用于侵蚀去除沉积在反应室3内壁上、光源5外表面等不需要的产物，而电极49也可置于光源5和加热车7之间。等离子体CVD同时可通过光化CVD法产生放电而完成，或通过光化CVD沉积后完成。按下述反应式，用TEOS（四乙基氧硅烷）实施等离子体CVD：
完成在底物上的沉淀并将底物从反应室取出后，借助于加热车7和电极49之间的放电，经侵蚀去除反应室内不需要的沉积产物，按下述反应式进行侵蚀：
为研究底物上光照度的均匀性和加热车侧面数之间的关系，进行下述实验。图5（A）至5（C）表示装在具有6、12和24正多边形截面的棱柱形底物支持器上底物的光照度分布图解示意图。图中，横座标是测量点离底物中心的距离，纵座标是根据在底物上测得最大照度值经规范化的照度。正如图中所示，光照度的分布随侧面数的增加而变得更均匀。即在照射面上，光照度波动在六面加热车情况下大于10%，而具有12面和24面加热车情况下，光照度波动限制在5%以内。由于在每个面上安装两个底物，故具有24面的加热车可持有48个底物。
图6（A）至6（C）表示本发明CVD实施例方法的剖面图。提供的待涂复底物表面带有许多铝引线51，如图6（A）所示，这些引线51以垂直于图面方向延伸，引线高0.8微米、宽0.6微米及间隔为0.9微米。如图6（B）所示，按反应式（1），在400℃左右，用光化CVD法在底物引线51上沉积氧化硅薄膜，厚度达0.3～0.5。此外，如图6（C）所示，按反应式（2），在200℃下用等离子体CVD沉积另一层氧化硅薄膜55。由于薄膜53耐较高温度，其绝缘能力极好，而TEOS在较低温度下处于液态，该薄膜提供了一层平滑的上表面。如图7所示，当备有上覆铝电极57时，该平滑的上表面是理想的。由于平滑的表面而减少电极57断开的可能。完成沉积后，通过侵蚀净化反应室内部，如除去沉积在汞灯19上的产物。图6（A）至6（C）仅仅是示意图。为了得到平滑的薄膜表面，或削圆淀积薄膜的棱边，在等离子体CVD之前或之后，在沉积薄膜上进行侵蚀。
利用这种方法，在每个底物上用光均匀照射，使整个底物15的表面沉积恒定厚度的薄膜。然而，通过调整汞灯19的光照度使其与加热车7的旋转同步，或调整加热车7的角速度与汞灯19的相应位置，可以进一步改进厚度的均匀性。根据本发明要点，很容易理解利用可旋转底物支持器也可改善非光化增强等离子体CVD。
本发明不应局限于以上具体的实施例，熟悉本领域的人可以进行很多改进和变化。如加热车7的断面，可以用其它正多边形或不规则多边形，或圆形。驱动装置也可置于反应室的顶边，或者以传动齿轮置于侧边，代替图2所示的置于底边的位置。

Claims (29)

1、一种光化增强CVD装置，包括：
一个反应室；
一个至少装有一个底物的底物支持器；
在上述反应室内至少有一个光源，用以照射装在所述底物支持器上的底物；
转动所述底物支持器的驱动装置；
反应气体引入装置；以及
抽空装置。
2、根据权利要求1所述装置，其中所述底物支持器被多个所述光源包围。
3、根据权利要求2所述装置，其中所述光源排列在环状板上，所述支持器围绕其中心旋转。
4、根据权利要求3所述装置，其中所述光源以固定的角度距离彼此隔开配置。
5、根据权利要求3所述装置，其中所述底物支持器的旋转轴垂直于所述环形板。
6、根据权利要求5所述装置，其中所述底物支持器呈圆筒形。
7、根据权利要求6所述装置，其中所述底物支持器呈棱柱体。
8、根据权利要求7所述装置，其中所述底物支持器有六个侧面，其面上装有底物。
9、根据权利要求7所述装置，其中所述底物支持器的侧面数大于12。
10、根据权利要求6所述装置，其中所述光源从所述圆筒形底物支持器的轴向延伸形成一灯泡。
11、一种光化增强CVD装置，包括：
一个反应室;
一个至少装有一个底物的底物支持器;
在所述反应室内至少有一个光源，用以照射装在所述底物支持器上的底物;
反应气体引入装置;以及
抽空装置，
所述装置特征在于，所述光源安装在密闭的透明管内。
12、根据权利要求11所述装置，其中所述光源是汞灯。
13、根据权利要求11所述装置，还包括使冷却气体通过所述透明管循环的系统。
14、根据权利要求13所述装置，其中所述冷却气体是氮气。
15、根据权利要求13所述装置，其中所述管是石英管，其一端是封闭的，另一端与所述循环系统相连接。
16、一种等离子体增强CVD装置，包括：
一个反应室;
一个至少装有一个底物的底物支持器;
一对用以在所述反应室内放电的电极;
转动所述底物支持器的驱动装置;
反应气体引入装置;以及
抽空装置。
17、根据权利要求16所述装置，其中所述底物支持器被所述电极之一所包围。
18、根据权利要求17所述装置，其中所述电极为圆筒形金属网。
19、根据权利要求18所述装置，还包括在所述底物支持器周围设置光源。
20、根据权利要求19所述装置，其中所述电极之一配置在所述反应室和底物支持器之间。
21、根据权利要求20所述装置，其中另一电极是所述底物支持器。
22、根据权利要求19所述装置，其中所述底物支持器的侧面数大于12。
23、一种制造半导体装置的方法，包括下述步骤：
至少将一个底物引进CVD装置的反应室;
用光化增强CVD在所述底物上沉积第一层薄膜;
用等离子体CVD在所述第一层薄膜上沉积第二层薄膜;
从所述反应室取出所述底物;
用侵蚀法除去所述反应室内沉积的不需要产物。
24、根据权利要求23所述方法，其中所述光化增强CVD按下述反应式进行：
25、根据权利要求23所述方法，其中所述等离子体CVD按下述反应式进行：
26、根据权利要求24所述方法，其中所述光化增强CVD在温度高于等离子体CVD条件下进行。
27、根据权利要求25所述方法，其中所述等离子体CVD在温度高于所述光化增强CVD条件下进行。
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JP21332586A JPS6369977A (ja) 1986-09-09 1986-09-09 均一な被膜を形成する為の光ｃｖｄ装置
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US6520189B1 (en) 2003-02-18
US20030140941A1 (en) 2003-07-31
US4950624A (en) 1990-08-21
KR880004128A (ko) 1988-06-01
EP0260097A1 (en) 1988-03-16
EP0260097B1 (en) 1992-12-09
US6013338A (en) 2000-01-11
EP0490883A1 (en) 1992-06-17
KR910003742B1 (ko) 1991-06-10
CN1020290C (zh) 1993-04-14
DE3782991T2 (de) 1993-04-08

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