DE10017336A1 - verfahren zur Herstellung von strahlungsemittierenden Halbleiter-Wafern - Google Patents

verfahren zur Herstellung von strahlungsemittierenden Halbleiter-Wafern

Info

Publication number
DE10017336A1
DE10017336A1 DE10017336A DE10017336A DE10017336A1 DE 10017336 A1 DE10017336 A1 DE 10017336A1 DE 10017336 A DE10017336 A DE 10017336A DE 10017336 A DE10017336 A DE 10017336A DE 10017336 A1 DE10017336 A1 DE 10017336A1
Authority
DE
Germany
Prior art keywords
carrier substrate
layer
substrate
metallization
emitting semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE10017336A
Other languages
German (de)
English (en)
Other versions
DE10017336C2 (de
Inventor
Matthias Braun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Semiconductor GmbH
Original Assignee
Vishay Semiconductor GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vishay Semiconductor GmbH filed Critical Vishay Semiconductor GmbH
Priority to DE10017336A priority Critical patent/DE10017336C2/de
Publication of DE10017336A1 publication Critical patent/DE10017336A1/de
Application granted granted Critical
Publication of DE10017336C2 publication Critical patent/DE10017336C2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
DE10017336A 2000-04-07 2000-04-07 verfahren zur Herstellung von strahlungsemittierenden Halbleiter-Wafern Expired - Lifetime DE10017336C2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE10017336A DE10017336C2 (de) 2000-04-07 2000-04-07 verfahren zur Herstellung von strahlungsemittierenden Halbleiter-Wafern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10017336A DE10017336C2 (de) 2000-04-07 2000-04-07 verfahren zur Herstellung von strahlungsemittierenden Halbleiter-Wafern

Publications (2)

Publication Number Publication Date
DE10017336A1 true DE10017336A1 (de) 2001-10-18
DE10017336C2 DE10017336C2 (de) 2002-05-16

Family

ID=7637929

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10017336A Expired - Lifetime DE10017336C2 (de) 2000-04-07 2000-04-07 verfahren zur Herstellung von strahlungsemittierenden Halbleiter-Wafern

Country Status (1)

Country Link
DE (1) DE10017336C2 (es)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10221858A1 (de) * 2002-02-25 2003-09-11 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung desselben
WO2004030108A2 (de) * 2002-09-23 2004-04-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes halbleiterbauelement
DE10245631A1 (de) * 2002-09-30 2004-04-15 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung
US6770542B2 (en) 2001-12-20 2004-08-03 Osram Opto Semiconductors Gmbh Method for fabricating semiconductor layers
DE102005061346A1 (de) * 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE10254457B4 (de) * 2001-12-20 2007-04-26 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer von einem Träger abgelösten Halbleiterschicht
DE102007004303A1 (de) * 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement und Bauelement-Verbund
DE102007008524A1 (de) * 2007-02-21 2008-08-28 Osram Opto Semiconductors Gmbh Strahlung emittierender Chip mit mindestens einem Halbleiterkörper
DE102007030129A1 (de) * 2007-06-29 2009-01-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement
EP1536466A3 (de) * 2003-11-28 2009-12-30 OSRAM Opto Semiconductors GmbH Trägerschicht für eine Halbleiterschichtenfolge und Verfahren zur Herstellung von Halbleiterchips
WO2009152908A3 (de) * 2008-05-27 2010-09-23 Setrinx Sarl Leuchtchip und leuchtvorrichtung mit einem solchen
US8058147B2 (en) 2005-08-05 2011-11-15 Osram Opto Semiconductors Gmbh Method for producing semiconductor components and thin-film semiconductor component
US20130119422A1 (en) * 2003-08-28 2013-05-16 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus and display element
US8450751B2 (en) 2007-04-26 2013-05-28 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor body and method for producing the same
US8835937B2 (en) 2004-02-20 2014-09-16 Osram Opto Semiconductors Gmbh Optoelectronic component, device comprising a plurality of optoelectronic components, and method for the production of an optoelectronic component
EP2728630A3 (en) * 2012-11-02 2015-08-05 LG Innotek Co., Ltd. Electrode configuration for a light emitting diode
US9142720B2 (en) 2007-01-29 2015-09-22 Osram Opto Semiconductors Gmbh Thin-film light emitting diode chip and method for producing a thin-film light emitting diode chip

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008028886B4 (de) * 2008-06-18 2024-02-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines strahlungsemittierenden Bauelements

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0356037A2 (en) * 1988-08-26 1990-02-28 Hewlett-Packard Company Method of making an electro-optical device with inverted transparent substrate
EP0434233A1 (en) * 1989-12-18 1991-06-26 Hewlett-Packard Company Light-emitting diode with an electrically conductive window layer
EP0616376A1 (en) * 1993-03-19 1994-09-21 Hewlett-Packard Company Wafer bonding of light emitting diode layers
DE19945465A1 (de) * 1998-09-25 2000-04-06 Murata Manufacturing Co Photonische Halbleitervorrichtung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0888410A (ja) * 1994-09-16 1996-04-02 Hitachi Cable Ltd 発光ダイオード

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0356037A2 (en) * 1988-08-26 1990-02-28 Hewlett-Packard Company Method of making an electro-optical device with inverted transparent substrate
EP0434233A1 (en) * 1989-12-18 1991-06-26 Hewlett-Packard Company Light-emitting diode with an electrically conductive window layer
EP0616376A1 (en) * 1993-03-19 1994-09-21 Hewlett-Packard Company Wafer bonding of light emitting diode layers
DE19945465A1 (de) * 1998-09-25 2000-04-06 Murata Manufacturing Co Photonische Halbleitervorrichtung

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
In: DEPATIS, JPO, 1996 *
JP 8-88410 A (abstract). DOKIDX *

Cited By (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6770542B2 (en) 2001-12-20 2004-08-03 Osram Opto Semiconductors Gmbh Method for fabricating semiconductor layers
DE10254457B4 (de) * 2001-12-20 2007-04-26 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer von einem Träger abgelösten Halbleiterschicht
DE10221858A1 (de) * 2002-02-25 2003-09-11 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung desselben
WO2004030108A2 (de) * 2002-09-23 2004-04-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes halbleiterbauelement
WO2004030108A3 (de) * 2002-09-23 2004-12-29 Osram Opto Semiconductors Gmbh Strahlungsemittierendes halbleiterbauelement
US7115907B2 (en) 2002-09-23 2006-10-03 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component
US7557381B2 (en) 2002-09-30 2009-07-07 Osram Opto Semiconductor Gmbh Semiconductor component
DE10245631A1 (de) * 2002-09-30 2004-04-15 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung
DE10245631B4 (de) 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement
US7208337B2 (en) 2002-09-30 2007-04-24 Osram Opto Semiconductors Gmbh Method of forming light emitting devices including forming mesas and singulating
US8692285B2 (en) * 2003-08-28 2014-04-08 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus and display element
US20130119422A1 (en) * 2003-08-28 2013-05-16 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus and display element
EP1536466A3 (de) * 2003-11-28 2009-12-30 OSRAM Opto Semiconductors GmbH Trägerschicht für eine Halbleiterschichtenfolge und Verfahren zur Herstellung von Halbleiterchips
US7723730B2 (en) 2003-11-28 2010-05-25 Osram Opto Semiconductors Gmbh Carrier layer for a semiconductor layer sequence and method for producing semiconductor chips
DE102005007601B4 (de) 2004-02-20 2023-03-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement, Vorrichtung mit einer Mehrzahl optoelektronischer Bauelemente und Verfahren zur Herstellung eines optoelektronischen Bauelements
US8835937B2 (en) 2004-02-20 2014-09-16 Osram Opto Semiconductors Gmbh Optoelectronic component, device comprising a plurality of optoelectronic components, and method for the production of an optoelectronic component
US8058147B2 (en) 2005-08-05 2011-11-15 Osram Opto Semiconductors Gmbh Method for producing semiconductor components and thin-film semiconductor component
DE102005061346A1 (de) * 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US9099574B2 (en) 2005-09-30 2015-08-04 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip and method for producing it
DE102007004303A1 (de) * 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement und Bauelement-Verbund
US8872330B2 (en) 2006-08-04 2014-10-28 Osram Opto Semiconductors Gmbh Thin-film semiconductor component and component assembly
US9142720B2 (en) 2007-01-29 2015-09-22 Osram Opto Semiconductors Gmbh Thin-film light emitting diode chip and method for producing a thin-film light emitting diode chip
DE102007008524A1 (de) * 2007-02-21 2008-08-28 Osram Opto Semiconductors Gmbh Strahlung emittierender Chip mit mindestens einem Halbleiterkörper
US8067783B2 (en) 2007-02-21 2011-11-29 Osram Opto Semiconductors Gmbh Radiation-emitting chip comprising at least one semiconductor body
US8450751B2 (en) 2007-04-26 2013-05-28 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor body and method for producing the same
US8653540B2 (en) 2007-04-26 2014-02-18 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor body and method for producing the same
US8461601B2 (en) 2007-06-29 2013-06-11 Osram Opto Semiconductors Gmbh Method for producing a plurality of optoelectronic devices, and optoelectronic device
DE102007030129A1 (de) * 2007-06-29 2009-01-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement
CN101681969B (zh) * 2007-06-29 2013-01-09 欧司朗光电半导体有限公司 用于制造多个光电子器件的方法和光电子器件
WO2009003442A1 (de) * 2007-06-29 2009-01-08 Osram Opto Semiconductors Gmbh Verfahren zur herstellung einer mehrzahl optoelektronischer bauelemente und optoelektronisches bauelement
WO2009152908A3 (de) * 2008-05-27 2010-09-23 Setrinx Sarl Leuchtchip und leuchtvorrichtung mit einem solchen
EP2728630A3 (en) * 2012-11-02 2015-08-05 LG Innotek Co., Ltd. Electrode configuration for a light emitting diode
US9190562B2 (en) 2012-11-02 2015-11-17 Lg Innotek Co., Ltd. Light emitting device

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Legal Events

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OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8363 Opposition against the patent
8330 Complete disclaimer