DE10196026T1 - Überzugs-Zusammensetzung zur Verwendung bei der Herstellung eines isolierenden dünnen Films - Google Patents

Überzugs-Zusammensetzung zur Verwendung bei der Herstellung eines isolierenden dünnen Films

Info

Publication number
DE10196026T1
DE10196026T1 DE10196026T DE10196026T DE10196026T1 DE 10196026 T1 DE10196026 T1 DE 10196026T1 DE 10196026 T DE10196026 T DE 10196026T DE 10196026 T DE10196026 T DE 10196026T DE 10196026 T1 DE10196026 T1 DE 10196026T1
Authority
DE
Germany
Prior art keywords
making
thin film
coating composition
insulating thin
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE10196026T
Other languages
English (en)
Other versions
DE10196026B4 (de
Inventor
Hiroyuki Hanahata
Toru Araki
Mikihiko Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Chemicals Corp
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Kasei Chemicals Corp
Asahi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei Chemicals Corp, Asahi Chemical Industry Co Ltd filed Critical Asahi Kasei Chemicals Corp
Publication of DE10196026T1 publication Critical patent/DE10196026T1/de
Application granted granted Critical
Publication of DE10196026B4 publication Critical patent/DE10196026B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane
DE10196026T 2000-04-04 2001-04-04 Überzugs-Zusammensetzung, dünner Film, zur Verwendung des dünnen Films und Verfahren zur Herstellung eines dünnen porösen Kieselsäure-Films Expired - Fee Related DE10196026B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000102447 2000-04-04
JP2000-102447 2000-04-04
PCT/JP2001/002932 WO2001074957A1 (fr) 2000-04-04 2001-04-04 Composition de revetement pour la production de films minces d'isolation

Publications (2)

Publication Number Publication Date
DE10196026T1 true DE10196026T1 (de) 2003-04-17
DE10196026B4 DE10196026B4 (de) 2011-02-10

Family

ID=18616327

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10196026T Expired - Fee Related DE10196026B4 (de) 2000-04-04 2001-04-04 Überzugs-Zusammensetzung, dünner Film, zur Verwendung des dünnen Films und Verfahren zur Herstellung eines dünnen porösen Kieselsäure-Films

Country Status (8)

Country Link
US (1) US6787191B2 (de)
KR (1) KR100498834B1 (de)
CN (1) CN1227311C (de)
AU (1) AU2001246832A1 (de)
DE (1) DE10196026B4 (de)
HK (1) HK1054762A1 (de)
TW (1) TWI250968B (de)
WO (1) WO2001074957A1 (de)

Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002212502A (ja) * 2001-01-15 2002-07-31 Shin Etsu Chem Co Ltd 膜形成用組成物、多孔質膜の形成方法及び多孔質膜
JP2002235037A (ja) * 2001-02-13 2002-08-23 Jsr Corp 膜形成用組成物の製造方法、膜形成用組成物、膜の形成方法およびシリカ系膜
WO2003052003A1 (fr) * 2001-12-14 2003-06-26 Asahi Kasei Kabushiki Kaisha Composition de revetement permettant de former des couches minces a faible indice de refraction
CN100415752C (zh) * 2002-01-31 2008-09-03 东粟株式会社 含有机硅烷化合物的绝缘膜用材料及其制法及半导体装置
KR101227664B1 (ko) * 2002-01-31 2013-01-29 도소 가부시키가이샤 유기실란화합물을 포함하여 구성되는 절연막용 재료, 그 제조방법 및 반도체장치
JP2002319582A (ja) * 2002-02-07 2002-10-31 Tokyo Ohka Kogyo Co Ltd シリカ系被膜形成用の塗布液
AU2002306213A1 (en) * 2002-06-03 2003-12-19 Asahi Kasei Kabushiki Kaisha Photocatalyst composition
JP3869318B2 (ja) * 2002-06-17 2007-01-17 ダイムラークライスラー・アクチェンゲゼルシャフト プロトン伝導性薄膜およびその製造方法
JP2004083812A (ja) * 2002-08-28 2004-03-18 Catalysts & Chem Ind Co Ltd 透明被膜形成用塗布液および透明被膜付基材、表示装置
JP4265409B2 (ja) * 2003-02-13 2009-05-20 三菱マテリアル株式会社 Ｓｉ−Ｓｉ結合を有する有機Ｓｉ含有化合物を用いたＳｉ含有薄膜の形成方法
JP4409515B2 (ja) 2003-04-09 2010-02-03 エルジー・ケム・リミテッド 絶縁膜形成用コーティング組成物、その組成物を使用した低誘電絶縁膜の製造方法、その組成物より製造される半導体素子用低誘電絶縁膜およびその絶縁膜からなる半導体素子
KR100504291B1 (ko) * 2003-07-14 2005-07-27 삼성전자주식회사 게르마늄을 포함하는 실록산계 수지 및 이를 이용한반도체 층간 절연막 형성 방법
KR101012950B1 (ko) * 2003-10-15 2011-02-08 삼성전자주식회사 유기 절연체 형성용 조성물 및 이를 이용하여 제조된 유기절연체
ATE479041T1 (de) * 2003-11-12 2010-09-15 Stuart G Burchill Jr Zusammensetzung für wärmeisolierschicht
JP2005314616A (ja) * 2004-04-30 2005-11-10 Shin Etsu Chem Co Ltd シリコーンコーティング組成物及び被覆物品
WO2005122228A1 (en) * 2004-06-07 2005-12-22 Dow Global Technologies Inc. Method for preparing a gap-filling dielectric film
FR2874032B1 (fr) * 2004-08-03 2006-10-27 Eastman Kodak Co Materiau destine a la formation d'images par impression par jet d'encre
JP4120627B2 (ja) * 2004-08-26 2008-07-16 セイコーエプソン株式会社 酸化膜形成方法
FR2874615B1 (fr) * 2004-08-30 2006-10-27 Nexans Sa Composition de vernis d'emaillage notamment pour fil de bobinage
US7629396B2 (en) * 2005-02-23 2009-12-08 E.I. Du Pont De Nemours And Company Silicon-containing polytrimethylene homo- for copolyether composition
JP4894153B2 (ja) * 2005-03-23 2012-03-14 株式会社アルバック 多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置
KR100785221B1 (ko) * 2005-05-23 2007-12-11 주식회사 엘지화학 유기실리케이트 중합체 용액의 농축방법
JP5242886B2 (ja) * 2005-05-24 2013-07-24 スリーエム イノベイティブ プロパティズ カンパニー 液体搬送部材
US7550040B2 (en) * 2005-06-17 2009-06-23 Nissan Chemical Industries, Ltd. Coating fluid for forming film, and film thereof and film-forming process
US7637013B2 (en) * 2005-08-23 2009-12-29 Canon Kabushiki Kaisha Method of manufacturing ink jet recording head
JP4616154B2 (ja) * 2005-11-14 2011-01-19 富士通株式会社 半導体装置の製造方法
US20070277734A1 (en) * 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US7902080B2 (en) 2006-05-30 2011-03-08 Applied Materials, Inc. Deposition-plasma cure cycle process to enhance film quality of silicon dioxide
US7790634B2 (en) * 2006-05-30 2010-09-07 Applied Materials, Inc Method for depositing and curing low-k films for gapfill and conformal film applications
US7825038B2 (en) 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
JP5030478B2 (ja) * 2006-06-02 2012-09-19 株式会社アルバック 多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置
US8232176B2 (en) 2006-06-22 2012-07-31 Applied Materials, Inc. Dielectric deposition and etch back processes for bottom up gapfill
US8197757B2 (en) * 2006-07-07 2012-06-12 Drexel University Electrical insulation of devices with thin layers
DE102006046308A1 (de) * 2006-09-29 2008-04-03 Siemens Ag Transparente poröse SiO2-Beschichtung für ein transparentes Substratmaterial
US20080241373A1 (en) * 2007-03-09 2008-10-02 Afg Industries, Inc. Anti-reflective coating for photovoltaic glass panel
WO2008139920A1 (ja) * 2007-05-08 2008-11-20 Central Glass Company, Limited 手塗り可能なゾルゲル膜形成用塗布液
JP5077659B2 (ja) * 2007-07-20 2012-11-21 ニチアス株式会社 触媒コンバーター及び触媒コンバーター用保持材
US7745352B2 (en) 2007-08-27 2010-06-29 Applied Materials, Inc. Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process
WO2009044960A1 (en) * 2007-10-02 2009-04-09 Cheil Industries Inc. Gap-filling composition with excellent shelf life by end-capping
US7943531B2 (en) 2007-10-22 2011-05-17 Applied Materials, Inc. Methods for forming a silicon oxide layer over a substrate
US7867923B2 (en) 2007-10-22 2011-01-11 Applied Materials, Inc. High quality silicon oxide films by remote plasma CVD from disilane precursors
US7803722B2 (en) * 2007-10-22 2010-09-28 Applied Materials, Inc Methods for forming a dielectric layer within trenches
DE102008000585A1 (de) 2008-03-10 2009-09-17 Wacker Chemie Ag Binderhaltige kolloidale wässrige Organopolysiloxandispersionen und deren Verwendung
DE102008000584A1 (de) * 2008-03-10 2009-09-17 Wacker Chemie Ag Verfahren zur Herstellung von Kompositpartikeln
US8357435B2 (en) 2008-05-09 2013-01-22 Applied Materials, Inc. Flowable dielectric equipment and processes
JP5439888B2 (ja) 2009-03-25 2014-03-12 パナソニック株式会社 複合磁性材料およびその製造方法
US8980382B2 (en) 2009-12-02 2015-03-17 Applied Materials, Inc. Oxygen-doping for non-carbon radical-component CVD films
US7935643B2 (en) 2009-08-06 2011-05-03 Applied Materials, Inc. Stress management for tensile films
US8741788B2 (en) 2009-08-06 2014-06-03 Applied Materials, Inc. Formation of silicon oxide using non-carbon flowable CVD processes
US7989365B2 (en) 2009-08-18 2011-08-02 Applied Materials, Inc. Remote plasma source seasoning
JP5345908B2 (ja) * 2009-08-21 2013-11-20 信越化学工業株式会社 オルガノポリシルメチレン及びオルガノポリシルメチレン組成物
US8278378B2 (en) * 2009-11-04 2012-10-02 Samsung Electronics Co., Ltd. Organosilicate compound, and composition and film including the same
US8449942B2 (en) 2009-11-12 2013-05-28 Applied Materials, Inc. Methods of curing non-carbon flowable CVD films
US20110151222A1 (en) * 2009-12-22 2011-06-23 Agc Flat Glass North America, Inc. Anti-reflective coatings and methods of making the same
KR20120111738A (ko) 2009-12-30 2012-10-10 어플라이드 머티어리얼스, 인코포레이티드 융통성을 가진 질소／수소 비율을 이용하여 제조된 라디칼에 의한 유전체 필름의 성장
US8329262B2 (en) 2010-01-05 2012-12-11 Applied Materials, Inc. Dielectric film formation using inert gas excitation
JP2013517616A (ja) 2010-01-06 2013-05-16 アプライド マテリアルズ インコーポレイテッド 酸化物ライナを使用する流動可能な誘電体
SG182333A1 (en) 2010-01-07 2012-08-30 Applied Materials Inc In-situ ozone cure for radical-component cvd
WO2011093799A1 (en) * 2010-01-28 2011-08-04 Agency For Science, Technology And Research A nano-composite
CN102844848A (zh) 2010-03-05 2012-12-26 应用材料公司 通过自由基成分化学气相沉积的共形层
US8236708B2 (en) 2010-03-09 2012-08-07 Applied Materials, Inc. Reduced pattern loading using bis(diethylamino)silane (C8H22N2Si) as silicon precursor
US7994019B1 (en) 2010-04-01 2011-08-09 Applied Materials, Inc. Silicon-ozone CVD with reduced pattern loading using incubation period deposition
US8476142B2 (en) 2010-04-12 2013-07-02 Applied Materials, Inc. Preferential dielectric gapfill
US8524004B2 (en) 2010-06-16 2013-09-03 Applied Materials, Inc. Loadlock batch ozone cure
US8318584B2 (en) 2010-07-30 2012-11-27 Applied Materials, Inc. Oxide-rich liner layer for flowable CVD gapfill
US8575248B2 (en) 2010-08-06 2013-11-05 Promerus, Llc Polymer composition for microelectronic assembly
US9285168B2 (en) 2010-10-05 2016-03-15 Applied Materials, Inc. Module for ozone cure and post-cure moisture treatment
US8664127B2 (en) 2010-10-15 2014-03-04 Applied Materials, Inc. Two silicon-containing precursors for gapfill enhancing dielectric liner
US8952119B2 (en) 2010-11-18 2015-02-10 Aspen Aerogels, Inc. Organically modified hybrid aerogels
US8535454B2 (en) * 2010-11-23 2013-09-17 Promerus, Llc Polymer composition for microelectronic assembly
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8450191B2 (en) 2011-01-24 2013-05-28 Applied Materials, Inc. Polysilicon films by HDP-CVD
US8716154B2 (en) 2011-03-04 2014-05-06 Applied Materials, Inc. Reduced pattern loading using silicon oxide multi-layers
US8445078B2 (en) 2011-04-20 2013-05-21 Applied Materials, Inc. Low temperature silicon oxide conversion
US8466073B2 (en) 2011-06-03 2013-06-18 Applied Materials, Inc. Capping layer for reduced outgassing
US9404178B2 (en) 2011-07-15 2016-08-02 Applied Materials, Inc. Surface treatment and deposition for reduced outgassing
US8617989B2 (en) 2011-09-26 2013-12-31 Applied Materials, Inc. Liner property improvement
US8551891B2 (en) 2011-10-04 2013-10-08 Applied Materials, Inc. Remote plasma burn-in
TWI507476B (zh) * 2012-03-26 2015-11-11 Promerus Llc 微電子組件用之聚合物組成物
CN103374277A (zh) * 2012-04-16 2013-10-30 深圳富泰宏精密工业有限公司 壳体及其制备方法
US9283438B2 (en) 2012-06-20 2016-03-15 Acushnet Company Golf balls with oxygen and moisture blocking protective paint layer
US8889566B2 (en) 2012-09-11 2014-11-18 Applied Materials, Inc. Low cost flowable dielectric films
US9273215B2 (en) * 2012-10-30 2016-03-01 Rohm And Haas Electronic Materials Llc Adhesion promoter
CN103909690A (zh) * 2013-01-07 2014-07-09 深圳富泰宏精密工业有限公司 壳体及应用该壳体的电子装置
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
CN103666193A (zh) * 2013-11-25 2014-03-26 铜陵天河特种电磁线有限公司 一种聚酰胺漆包线绝缘漆及其制备方法
WO2015093455A1 (ja) * 2013-12-16 2015-06-25 国立大学法人北陸先端科学技術大学院大学 半導体素子及びその製造方法、並びに脂肪族ポリカーボネート
TW201611261A (zh) * 2014-06-06 2016-03-16 波利亞有限公司 自我對齊金屬氧化物電晶體及其製造方法
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition
CN104278523B (zh) * 2014-09-15 2016-03-16 安徽蓝海机电设备有限公司 绝缘漆及其制备方法、黄蜡绸及其制备方法
KR102312822B1 (ko) * 2014-10-03 2021-10-13 아스펜 에어로겔, 인코포레이티드 개선된 소수성 에어로겔 물질
KR101920642B1 (ko) * 2015-11-27 2018-11-21 삼성에스디아이 주식회사 감광성 수지 조성물, 그로부터 형성된 경화막, 및 경화막을 갖는 소자
CN108475748B (zh) * 2015-12-15 2021-08-20 苹果公司 微孔绝缘体
JP6792788B2 (ja) * 2017-03-30 2020-12-02 東京エレクトロン株式会社 半導体装置の製造方法
US10818903B1 (en) 2017-08-15 2020-10-27 Apple Inc. Polypropylene carbonate and catalysts
JP6503128B1 (ja) * 2018-02-13 2019-04-17 日本板硝子株式会社 膜、液状組成物、光学素子、及び撮像装置
CN111169059A (zh) * 2018-11-09 2020-05-19 万喜人家(北京)健康科技有限公司 一种网洞高分子成膜材料的制备方法及其制备设备
US11398520B2 (en) 2019-01-11 2022-07-26 HKC Corporation Limited X-ray detector, method for manufacturing x-ray detector, and medical equipment
TWI721707B (zh) * 2019-12-12 2021-03-11 臻鼎科技股份有限公司 多孔二氧化矽、其製備方法及其應用

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01135313A (ja) 1987-11-20 1989-05-29 Tamao Morita カーテン束ね具
JPH0794326B2 (ja) 1990-09-20 1995-10-11 工業技術院長 ＳｉＯ▲下２▼系多孔質ガラスの製造法
JPH06322136A (ja) 1993-05-11 1994-11-22 Kansai Shin Gijutsu Kenkyusho:Kk 有機・無機ポリマー複合体およびその製造方法
JP2799425B2 (ja) 1993-12-09 1998-09-17 工業技術院長 セラミックス多孔質膜の製造方法
JPH07185306A (ja) 1993-12-28 1995-07-25 Nichias Corp エアロゲル
JP4079383B2 (ja) 1995-12-29 2008-04-23 東京応化工業株式会社 シリカ系被膜形成用塗布液
JPH10158011A (ja) 1996-11-25 1998-06-16 Asahi Chem Ind Co Ltd 多孔質ケイ素酸化物膜の製造方法
JP4025389B2 (ja) 1997-07-15 2007-12-19 旭化成株式会社 有機−無機複合体および無機多孔質体
DE69827259T2 (de) 1997-07-15 2006-02-16 Asahi Kasei Kabushiki Kaisha Zusammensetzungen aus alkoxysilan und organischem polymer zur herstellung von dünnen isolierenden schichten und deren verwendung
US6448331B1 (en) * 1997-07-15 2002-09-10 Asahi Kasei Kabushiki Kaisha Alkoxysilane/organic polymer composition for thin insulating film production and use thereof
US6696258B1 (en) * 1998-01-20 2004-02-24 Drexel University Mesoporous materials and methods of making the same
JPH11322992A (ja) 1998-05-18 1999-11-26 Jsr Corp 多孔質膜
DE69941677D1 (de) * 1998-09-25 2010-01-07 Jgc Catalysts & Chemicals Ltd Flüssige beschichtungszusammensetzung für silicabeschichtung mit niedriger durchlössigkeit und mit d
JP2000119600A (ja) 1998-10-12 2000-04-25 Jsr Corp 膜形成用組成物、膜の製造方法および多孔質膜
JP2000119601A (ja) 1998-10-12 2000-04-25 Jsr Corp 膜形成用組成物、膜の形成方法および多孔質膜
US6399666B1 (en) * 1999-01-27 2002-06-04 International Business Machines Corporation Insulative matrix material
JP2000290590A (ja) 1999-04-12 2000-10-17 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
JP4798823B2 (ja) 2000-04-04 2011-10-19 旭化成株式会社 多孔質のケイ素酸化物塗膜
JP2001287910A (ja) 2000-04-04 2001-10-16 Asahi Kasei Corp 多孔質ケイ素酸化物塗膜の製造方法
US6271273B1 (en) * 2000-07-14 2001-08-07 Shipley Company, L.L.C. Porous materials

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DE10196026B4 (de) 2011-02-10
WO2001074957A1 (fr) 2001-10-11
KR20020087116A (ko) 2002-11-21
US6787191B2 (en) 2004-09-07
CN1422310A (zh) 2003-06-04
US20030099844A1 (en) 2003-05-29

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