DE10196990T1 - Hochspannungs-Superjunction-Halbleiterbauteil mit vertikaler Stromleitung - Google Patents

Hochspannungs-Superjunction-Halbleiterbauteil mit vertikaler Stromleitung

Info

Publication number
DE10196990T1
DE10196990T1 DE10196990T DE10196990T DE10196990T1 DE 10196990 T1 DE10196990 T1 DE 10196990T1 DE 10196990 T DE10196990 T DE 10196990T DE 10196990 T DE10196990 T DE 10196990T DE 10196990 T1 DE10196990 T1 DE 10196990T1
Authority
DE
Germany
Prior art keywords
semiconductor device
high voltage
power line
vertical power
superjunction semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE10196990T
Other languages
English (en)
Inventor
Daniel M Kinzer
Srikant Sridevan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of DE10196990T1 publication Critical patent/DE10196990T1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
DE10196990T 2000-12-07 2001-12-03 Hochspannungs-Superjunction-Halbleiterbauteil mit vertikaler Stromleitung Withdrawn DE10196990T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/732,401 US6608350B2 (en) 2000-12-07 2000-12-07 High voltage vertical conduction superjunction semiconductor device
PCT/US2001/047275 WO2002047171A1 (en) 2000-12-07 2001-12-03 High voltage vertical conduction superjunction semiconductor device

Publications (1)

Publication Number Publication Date
DE10196990T1 true DE10196990T1 (de) 2003-10-23

Family

ID=24943380

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10196990T Withdrawn DE10196990T1 (de) 2000-12-07 2001-12-03 Hochspannungs-Superjunction-Halbleiterbauteil mit vertikaler Stromleitung

Country Status (5)

Country Link
US (2) US6608350B2 (de)
JP (1) JP3779605B2 (de)
AU (1) AU2002228895A1 (de)
DE (1) DE10196990T1 (de)
WO (1) WO2002047171A1 (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014105788B4 (de) * 2013-05-01 2016-12-01 Infineon Technologies Austria Ag Halbleitervorrichtung mit einer superjunction-struktur mit kompensationsschichten und einer dielektrischen schicht
US9570596B2 (en) 2013-05-01 2017-02-14 Infineon Technologies Austria Ag Super junction semiconductor device having a compensation structure
US9627471B2 (en) 2013-05-01 2017-04-18 Infineon Technologies Austria Ag Super junction semiconductor device having strip structures in a cell area
DE102018108178A1 (de) * 2018-04-06 2019-10-10 Infineon Technologies Ag Halbleiterbauelement mit Grabenstruktur und Herstellungsverfahren

Families Citing this family (167)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1192640A2 (de) 1999-06-03 2002-04-03 GENERAL SEMICONDUCTOR, Inc. Leistungs-mosfet und verfahren zu dessen herstellung
JP4363736B2 (ja) * 2000-03-01 2009-11-11 新電元工業株式会社 トランジスタ及びその製造方法
US6627949B2 (en) * 2000-06-02 2003-09-30 General Semiconductor, Inc. High voltage power MOSFET having low on-resistance
US7745289B2 (en) 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
US6525372B2 (en) * 2000-11-16 2003-02-25 Silicon Wireless Corporation Vertical power devices having insulated source electrodes in discontinuous deep trenches
US6710403B2 (en) 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
US6916745B2 (en) 2003-05-20 2005-07-12 Fairchild Semiconductor Corporation Structure and method for forming a trench MOSFET having self-aligned features
US6818513B2 (en) * 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
US6803626B2 (en) 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
JP5025071B2 (ja) * 2001-02-01 2012-09-12 三菱電機株式会社 半導体装置およびその製造方法
TW543146B (en) * 2001-03-09 2003-07-21 Fairchild Semiconductor Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge
US6756273B2 (en) * 2001-03-12 2004-06-29 Semiconductor Components Industries, L.L.C. Semiconductor component and method of manufacturing
US7736976B2 (en) * 2001-10-04 2010-06-15 Vishay General Semiconductor Llc Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands
US6576516B1 (en) * 2001-12-31 2003-06-10 General Semiconductor, Inc. High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon
US6750104B2 (en) * 2001-12-31 2004-06-15 General Semiconductor, Inc. High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source
US6686244B2 (en) * 2002-03-21 2004-02-03 General Semiconductor, Inc. Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step
JP3993458B2 (ja) * 2002-04-17 2007-10-17 株式会社東芝 半導体装置
JP3652322B2 (ja) * 2002-04-30 2005-05-25 Ｎｅｃエレクトロニクス株式会社 縦型ｍｏｓｆｅｔとその製造方法
US6812525B2 (en) * 2002-06-25 2004-11-02 International Rectifier Corporation Trench fill process
DE10240861B4 (de) * 2002-09-04 2007-08-30 Infineon Technologies Ag Mittels Feldeffekt steuerbares Halbleiterbauelement und Verfahren zu dessen Herstellung
JP3634830B2 (ja) * 2002-09-25 2005-03-30 株式会社東芝 電力用半導体素子
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US6710418B1 (en) 2002-10-11 2004-03-23 Fairchild Semiconductor Corporation Schottky rectifier with insulation-filled trenches and method of forming the same
JP2004241413A (ja) * 2003-02-03 2004-08-26 Toshiba Corp 半導体装置
JP3971327B2 (ja) * 2003-03-11 2007-09-05 株式会社東芝 絶縁ゲート型半導体装置
JP3721172B2 (ja) 2003-04-16 2005-11-30 株式会社東芝 半導体装置
JP4326835B2 (ja) * 2003-05-20 2009-09-09 三菱電機株式会社 半導体装置、半導体装置の製造方法及び半導体装置の製造プロセス評価方法
US7652326B2 (en) 2003-05-20 2010-01-26 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US7015104B1 (en) * 2003-05-29 2006-03-21 Third Dimension Semiconductor, Inc. Technique for forming the deep doped columns in superjunction
JP4209260B2 (ja) * 2003-06-04 2009-01-14 Ｎｅｃエレクトロニクス株式会社 半導体装置およびその製造方法
KR100994719B1 (ko) 2003-11-28 2010-11-16 페어차일드코리아반도체 주식회사 슈퍼정션 반도체장치
KR20070038945A (ko) * 2003-12-19 2007-04-11 써드 디멘존 세미컨덕터, 인코포레이티드 수퍼 접합 장치의 제조 방법
JP2007515079A (ja) * 2003-12-19 2007-06-07 サード ディメンジョン （スリーディ） セミコンダクタ インコーポレイテッド 従来の端子を備えた超接合装置の製造方法
US7199006B2 (en) * 2003-12-19 2007-04-03 Third Dimension (3D) Semiconductor, Inc. Planarization method of manufacturing a superjunction device
US7023069B2 (en) * 2003-12-19 2006-04-04 Third Dimension (3D) Semiconductor, Inc. Method for forming thick dielectric regions using etched trenches
TWI348219B (en) * 2003-12-19 2011-09-01 Third Dimension 3D Sc Inc A method for manufacturing a superjunction device with wide mesas
JP4903055B2 (ja) * 2003-12-30 2012-03-21 フェアチャイルド・セミコンダクター・コーポレーション パワー半導体デバイスおよびその製造方法
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
US7535056B2 (en) * 2004-03-11 2009-05-19 Yokogawa Electric Corporation Semiconductor device having a low concentration layer formed outside a drift layer
US6982193B2 (en) 2004-05-10 2006-01-03 Semiconductor Components Industries, L.L.C. Method of forming a super-junction semiconductor device
DE102004024344B4 (de) * 2004-05-17 2010-04-15 Infineon Technologies Ag Verfahren zur Herstellung eines Leistungs-Halbleiterbauteils sowie Leistungs-Halbleiterbauteil
JP3875245B2 (ja) * 2004-07-26 2007-01-31 株式会社東芝 半導体装置
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
JP5259920B2 (ja) * 2004-08-04 2013-08-07 ローム株式会社 半導体装置およびその製造方法
KR100582374B1 (ko) * 2004-09-08 2006-05-22 매그나칩 반도체 유한회사 고전압 트랜지스터 및 그 제조 방법
DE102004044619B4 (de) * 2004-09-13 2009-07-16 Infineon Technologies Ag Kondensatorstruktur in Grabenstrukturen von Halbleiterbauteilen und Halbleiterbauteile mit derartigen Kondensatorstrukturen und Verfahren zur Herstellung derselben
DE102004046697B4 (de) * 2004-09-24 2020-06-10 Infineon Technologies Ag Hochspannungsfestes Halbleiterbauelement mit vertikal leitenden Halbleiterkörperbereichen und einer Grabenstruktur sowie Verfahren zur Herstellung desselben
US7667264B2 (en) 2004-09-27 2010-02-23 Alpha And Omega Semiconductor Limited Shallow source MOSFET
JP4913336B2 (ja) * 2004-09-28 2012-04-11 ルネサスエレクトロニクス株式会社 半導体装置
DE102004054352B3 (de) * 2004-11-09 2006-02-16 Infineon Technologies Ag Verfahren zum Strukturieren von Kondensatorstrukturen in Halbleitergräben
JP2006140250A (ja) * 2004-11-11 2006-06-01 Toshiba Corp 半導体装置及びその製造方法
JP4907862B2 (ja) * 2004-12-10 2012-04-04 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7598586B2 (en) * 2004-12-24 2009-10-06 Rohm Co., Ltd. Semiconductor device and production method therefor
TWI401749B (zh) 2004-12-27 2013-07-11 Third Dimension 3D Sc Inc 用於高電壓超接面終止之方法
US7439583B2 (en) * 2004-12-27 2008-10-21 Third Dimension (3D) Semiconductor, Inc. Tungsten plug drain extension
US8283723B2 (en) * 2005-02-11 2012-10-09 Alpha & Omega Semiconductor Limited MOS device with low injection diode
US8093651B2 (en) * 2005-02-11 2012-01-10 Alpha & Omega Semiconductor Limited MOS device with integrated schottky diode in active region contact trench
US7948029B2 (en) 2005-02-11 2011-05-24 Alpha And Omega Semiconductor Incorporated MOS device with varying trench depth
US7285822B2 (en) 2005-02-11 2007-10-23 Alpha & Omega Semiconductor, Inc. Power MOS device
US8362547B2 (en) 2005-02-11 2013-01-29 Alpha & Omega Semiconductor Limited MOS device with Schottky barrier controlling layer
US7285823B2 (en) * 2005-02-15 2007-10-23 Semiconductor Components Industries, L.L.C. Superjunction semiconductor device structure
US7176524B2 (en) * 2005-02-15 2007-02-13 Semiconductor Components Industries, Llc Semiconductor device having deep trench charge compensation regions and method
US7482220B2 (en) 2005-02-15 2009-01-27 Semiconductor Components Industries, L.L.C. Semiconductor device having deep trench charge compensation regions and method
US7253477B2 (en) * 2005-02-15 2007-08-07 Semiconductor Components Industries, L.L.C. Semiconductor device edge termination structure
JP4116007B2 (ja) 2005-03-04 2008-07-09 株式会社東芝 半導体装置及びその製造方法
KR101236030B1 (ko) 2005-04-06 2013-02-21 페어차일드 세미컨덕터 코포레이션 트랜치-게이트 전계효과 트랜지스터 및 그 형성 방법
TW200727367A (en) * 2005-04-22 2007-07-16 Icemos Technology Corp Superjunction device having oxide lined trenches and method for manufacturing a superjunction device having oxide lined trenches
US20060255401A1 (en) * 2005-05-11 2006-11-16 Yang Robert K Increasing breakdown voltage in semiconductor devices with vertical series capacitive structures
US7535057B2 (en) * 2005-05-24 2009-05-19 Robert Kuo-Chang Yang DMOS transistor with a poly-filled deep trench for improved performance
US20070012983A1 (en) * 2005-07-15 2007-01-18 Yang Robert K Terminations for semiconductor devices with floating vertical series capacitive structures
DE102005035699B4 (de) * 2005-07-27 2010-09-16 Infineon Technologies Austria Ag Halbleiterleistungsbauelement mit Ladungskompensationsstruktur und Verfahren zur Herstellung desselben
US7385248B2 (en) * 2005-08-09 2008-06-10 Fairchild Semiconductor Corporation Shielded gate field effect transistor with improved inter-poly dielectric
US7446018B2 (en) 2005-08-22 2008-11-04 Icemos Technology Corporation Bonded-wafer superjunction semiconductor device
US7514743B2 (en) * 2005-08-23 2009-04-07 Robert Kuo-Chang Yang DMOS transistor with floating poly-filled trench for improved performance through 3-D field shaping
US8354730B2 (en) * 2005-08-26 2013-01-15 Hitachi, Ltd. Manufacturing method of semiconductor device and semiconductor device
US7811907B2 (en) * 2005-09-29 2010-10-12 Denso Corporation Method for manufacturing semiconductor device and epitaxial growth equipment
DE102005048447B4 (de) * 2005-10-07 2007-07-19 Infineon Technologies Ag Halbleiterleistungsbauelement mit Ladungskompensationsstruktur und Verfahren zur Herstellung desselben
US7554137B2 (en) * 2005-10-25 2009-06-30 Infineon Technologies Austria Ag Power semiconductor component with charge compensation structure and method for the fabrication thereof
JP5017865B2 (ja) 2006-01-17 2012-09-05 富士電機株式会社 半導体装置
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
US7679146B2 (en) * 2006-05-30 2010-03-16 Semiconductor Components Industries, Llc Semiconductor device having sub-surface trench charge compensation regions
US7411266B2 (en) * 2006-05-30 2008-08-12 Semiconductor Components Industries, L.L.C. Semiconductor device having trench charge compensation regions and method
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
US7799640B2 (en) * 2006-09-28 2010-09-21 Semiconductor Components Industries, Llc Method of forming a semiconductor device having trench charge compensation regions
US9437729B2 (en) 2007-01-08 2016-09-06 Vishay-Siliconix High-density power MOSFET with planarized metalization
JP5479915B2 (ja) * 2007-01-09 2014-04-23 マックスパワー・セミコンダクター・インコーポレイテッド 半導体装置
US8564057B1 (en) 2007-01-09 2013-10-22 Maxpower Semiconductor, Inc. Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield
US9947770B2 (en) 2007-04-03 2018-04-17 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
US8580651B2 (en) * 2007-04-23 2013-11-12 Icemos Technology Ltd. Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material
US7723172B2 (en) 2007-04-23 2010-05-25 Icemos Technology Ltd. Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material
CN103762243B (zh) 2007-09-21 2017-07-28 飞兆半导体公司 功率器件
US20090085148A1 (en) * 2007-09-28 2009-04-02 Icemos Technology Corporation Multi-directional trenching of a plurality of dies in manufacturing superjunction devices
TW200921912A (en) * 2007-11-05 2009-05-16 Anpec Electronics Corp Power transistor capable of decreasing capacitance between gate and drain
US7772668B2 (en) 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
US8159039B2 (en) * 2008-01-11 2012-04-17 Icemos Technology Ltd. Superjunction device having a dielectric termination and methods for manufacturing the device
US7880224B2 (en) * 2008-01-25 2011-02-01 Infineon Technologies Austria Ag Semiconductor component having discontinuous drift zone control dielectric arranged between drift zone and drift control zone and a method of making the same
US7846821B2 (en) * 2008-02-13 2010-12-07 Icemos Technology Ltd. Multi-angle rotation for ion implantation of trenches in superjunction devices
US7795045B2 (en) * 2008-02-13 2010-09-14 Icemos Technology Ltd. Trench depth monitor for semiconductor manufacturing
US8030133B2 (en) * 2008-03-28 2011-10-04 Icemos Technology Ltd. Method of fabricating a bonded wafer substrate for use in MEMS structures
US9000550B2 (en) * 2008-09-08 2015-04-07 Semiconductor Components Industries, Llc Semiconductor component and method of manufacture
US7902075B2 (en) * 2008-09-08 2011-03-08 Semiconductor Components Industries, L.L.C. Semiconductor trench structure having a sealing plug and method
US7960781B2 (en) * 2008-09-08 2011-06-14 Semiconductor Components Industries, Llc Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and method
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
US9508805B2 (en) 2008-12-31 2016-11-29 Alpha And Omega Semiconductor Incorporated Termination design for nanotube MOSFET
US8299494B2 (en) * 2009-06-12 2012-10-30 Alpha & Omega Semiconductor, Inc. Nanotube semiconductor devices
US7910486B2 (en) * 2009-06-12 2011-03-22 Alpha & Omega Semiconductor, Inc. Method for forming nanotube semiconductor devices
US9443974B2 (en) * 2009-08-27 2016-09-13 Vishay-Siliconix Super junction trench power MOSFET device fabrication
US9425306B2 (en) * 2009-08-27 2016-08-23 Vishay-Siliconix Super junction trench power MOSFET devices
US8319290B2 (en) 2010-06-18 2012-11-27 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
CN102299072A (zh) * 2010-06-24 2011-12-28 上海华虹Nec电子有限公司 沟槽型超级结器件的制作方法及得到的器件
US8487371B2 (en) 2011-03-29 2013-07-16 Fairchild Semiconductor Corporation Vertical MOSFET transistor having source/drain contacts disposed on the same side and method for manufacturing the same
CN102184861A (zh) * 2011-04-08 2011-09-14 上海先进半导体制造股份有限公司 冷mos的沟槽填充方法以及冷mos的沟槽结构
CN102184860A (zh) * 2011-04-08 2011-09-14 上海先进半导体制造股份有限公司 冷mos的沟槽填充方法以及冷mos的沟槽结构
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
WO2012158977A2 (en) 2011-05-18 2012-11-22 Vishay-Siliconix Semiconductor device
JP2013131512A (ja) * 2011-12-20 2013-07-04 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
JP2013145770A (ja) 2012-01-13 2013-07-25 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
TWI446459B (zh) * 2012-02-14 2014-07-21 Anpec Electronics Corp 具有超級介面之功率電晶體元件之製作方法
US8946814B2 (en) 2012-04-05 2015-02-03 Icemos Technology Ltd. Superjunction devices having narrow surface layout of terminal structures, buried contact regions and trench gates
US9685511B2 (en) 2012-05-21 2017-06-20 Infineon Technologies Austria Ag Semiconductor device and method for manufacturing a semiconductor device
US9099519B2 (en) * 2012-05-23 2015-08-04 Great Wall Semiconductor Corporation Semiconductor device and method of forming junction enhanced trench power MOSFET
CN103515242A (zh) * 2012-06-29 2014-01-15 无锡维赛半导体有限公司 一种功率晶体管及其制作方法
JP6120525B2 (ja) * 2012-10-30 2017-04-26 三菱電機株式会社 炭化珪素半導体装置
TWI470701B (zh) 2012-12-13 2015-01-21 Pfc Device Holdings Ltd 用於半導體元件之超接面結構及其製程
US9349725B2 (en) * 2013-03-13 2016-05-24 Michael W. Shore Stripe orientation for trenches and contact windows
US9318554B2 (en) * 2013-03-13 2016-04-19 Michael Wayne Shore Gate pad and gate feed breakdown voltage enhancement
US9000515B2 (en) * 2013-05-22 2015-04-07 Force Mos Technology Co., Ltd. Super-junction trench MOSFETs with short terminations
US10861938B2 (en) * 2013-07-19 2020-12-08 Nissan Motor Co., Ltd. Semiconductor device and method of manufacturing the same
US20150035002A1 (en) * 2013-07-31 2015-02-05 Infineon Technologies Austria Ag Super Junction Semiconductor Device and Manufacturing Method
US9112022B2 (en) 2013-07-31 2015-08-18 Infineon Technologies Austria Ag Super junction structure having a thickness of first and second semiconductor regions which gradually changes from a transistor area into a termination area
JP6193677B2 (ja) * 2013-08-28 2017-09-06 ルネサスエレクトロニクス株式会社 半導体装置
US9093520B2 (en) 2013-08-28 2015-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. High-voltage super junction by trench and epitaxial doping
KR20150065240A (ko) * 2013-12-05 2015-06-15 서울반도체 주식회사 누설전류 억제 구조물을 구비하는 질화물계 트랜지스터
US9985094B2 (en) * 2013-12-27 2018-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Super junction with an angled trench, transistor having the super junction and method of making the same
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
US9312382B2 (en) 2014-07-22 2016-04-12 Empire Technology Development Llc High voltage transistor device with reduced characteristic on resistance
KR102026543B1 (ko) 2014-08-19 2019-09-27 비쉐이-실리코닉스 전자 회로
WO2016028944A1 (en) 2014-08-19 2016-02-25 Vishay-Siliconix Super-junction metal oxide semiconductor field effect transistor
US9171949B1 (en) 2014-09-24 2015-10-27 Alpha And Omega Semiconductor Incorporated Semiconductor device including superjunction structure formed using angled implant process
US9698256B2 (en) * 2014-09-24 2017-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Termination of super junction power MOSFET
JP6763779B2 (ja) * 2014-11-18 2020-09-30 ローム株式会社 半導体装置および半導体装置の製造方法
CN105226090B (zh) * 2015-11-10 2018-07-13 株洲中车时代电气股份有限公司 一种绝缘栅双极晶体管及其制作方法
CN105529369B (zh) * 2016-03-08 2019-05-14 中国电子科技集团公司第二十四研究所 一种半导体元胞结构和功率半导体器件
US20170338302A1 (en) * 2016-05-23 2017-11-23 Infineon Technologies Ag Power Semiconductor Device with Charge Balance Design
US20170373142A1 (en) * 2016-06-23 2017-12-28 Littelfuse, Inc. Semiconductor device having side-diffused trench plug
CN105957882B (zh) * 2016-06-27 2018-10-02 电子科技大学 一种高压功率器件终端区结构
JP6649197B2 (ja) * 2016-07-14 2020-02-19 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN107516679B (zh) * 2017-08-07 2020-02-04 电子科技大学 一种深槽超结dmos器件
US10727326B2 (en) * 2017-08-21 2020-07-28 Semiconductor Components Industries, Llc Trench-gate insulated-gate bipolar transistors (IGBTs)
US11056581B2 (en) * 2017-08-21 2021-07-06 Semiconductor Components Industries, Llc Trench-gate insulated-gate bipolar transistors
CN108091683B (zh) * 2017-12-11 2020-09-22 深圳迈辽技术转移中心有限公司 半导体功率器件的超结结构及其制作方法
CN108110042A (zh) * 2017-12-13 2018-06-01 深圳市晶特智造科技有限公司 半导体功率器件的超结结构及其制作方法
US10644102B2 (en) 2017-12-28 2020-05-05 Alpha And Omega Semiconductor (Cayman) Ltd. SGT superjunction MOSFET structure
TWI666774B (zh) * 2018-03-19 2019-07-21 全宇昕科技股份有限公司 高電壓金氧半場效電晶體
JP6818712B2 (ja) * 2018-03-22 2021-01-20 株式会社東芝 半導体装置
CN108417624B (zh) * 2018-05-11 2021-02-02 安徽工业大学 一种提高短路鲁棒性的igbt及其制备方法
CN108417623B (zh) * 2018-05-11 2021-02-02 安徽工业大学 含半绝缘区的igbt及其制备方法
CN108417638B (zh) * 2018-05-11 2021-02-02 安徽工业大学 含半绝缘区的mosfet及其制备方法
TWI655688B (zh) 2018-05-18 2019-04-01 英屬維爾京群商節能元件控股有限公司 具有超接面結構之半導體元件及其製程
JP7196000B2 (ja) * 2019-04-02 2022-12-26 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US11271100B2 (en) * 2019-10-15 2022-03-08 Infineon Technologies Austria Ag Narrow semiconductor mesa device
JP7374795B2 (ja) 2020-02-05 2023-11-07 株式会社東芝 半導体装置
CN112086506B (zh) * 2020-10-20 2022-02-18 苏州东微半导体股份有限公司 半导体超结器件的制造方法
CN115241277B (zh) * 2022-09-22 2023-01-10 深圳芯能半导体技术有限公司 一种隔离型沟槽mos器件及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2089119A (en) 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
US4855804A (en) * 1987-11-17 1989-08-08 Motorola, Inc. Multilayer trench isolation process and structure
EP0879481B1 (de) * 1996-02-05 2002-05-02 Infineon Technologies AG Durch feldeffekt steuerbares halbleiterbauelement
JP3938964B2 (ja) * 1997-02-10 2007-06-27 三菱電機株式会社 高耐圧半導体装置およびその製造方法
US6452230B1 (en) 1998-12-23 2002-09-17 International Rectifier Corporation High voltage mosgated device with trenches to reduce on-resistance
EP1192640A2 (de) * 1999-06-03 2002-04-03 GENERAL SEMICONDUCTOR, Inc. Leistungs-mosfet und verfahren zu dessen herstellung

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014105788B4 (de) * 2013-05-01 2016-12-01 Infineon Technologies Austria Ag Halbleitervorrichtung mit einer superjunction-struktur mit kompensationsschichten und einer dielektrischen schicht
US9570596B2 (en) 2013-05-01 2017-02-14 Infineon Technologies Austria Ag Super junction semiconductor device having a compensation structure
US9627471B2 (en) 2013-05-01 2017-04-18 Infineon Technologies Austria Ag Super junction semiconductor device having strip structures in a cell area
DE102018108178A1 (de) * 2018-04-06 2019-10-10 Infineon Technologies Ag Halbleiterbauelement mit Grabenstruktur und Herstellungsverfahren

Also Published As

Publication number Publication date
WO2002047171A1 (en) 2002-06-13
USRE41509E1 (en) 2010-08-17
AU2002228895A1 (en) 2002-06-18
US20020070418A1 (en) 2002-06-13
JP2002217415A (ja) 2002-08-02
US6608350B2 (en) 2003-08-19
JP3779605B2 (ja) 2006-05-31

Similar Documents

Publication Publication Date Title
DE10196990T1 (de) Hochspannungs-Superjunction-Halbleiterbauteil mit vertikaler Stromleitung
DE60009214D1 (de) Leistungs MOSFET mit vorgespanntem Gate
DE60025865D1 (de) Halbleitervorrichtung und elektrische Stromwandlungsvorrichtung
DE60127027D1 (de) Halbleiterelement mit Leistungsverdrahtungsstruktur
DE60128025D1 (de) Halbleiterbauelement mit SOI-Struktur
DE60015052D1 (de) Halbleiter Leistungsumwandlungsvorrichtung
DE60136415D1 (de) Leistungshalbleiter-Schaltelement
DE60232480D1 (de) Hochspannungs-Halbleiterbauelement
DE10362232B8 (de) Leistungshalbleitervorrichtung
DE60036594D1 (de) Feldeffekt-Halbleiterbauelement
DE202004021352U8 (de) Leistungshalbleitervorrichtungen
DE60237579D1 (de) Endgerät mit stromsparmodus
DE60123185D1 (de) Halbleiterlaservorrichtung mit niedrigerem Schwellstrom
NL1013625A1 (nl) Laterale hoogspanning halfgeleiderinrichting.
DE60029554D1 (de) Halbleiterbauelement mit hochspannungselement
DE50111409D1 (de) Vertikales hochvolt-halbleiterbauelement
DE69938418D1 (de) Graben-gate-halbleiteranordnung
DE60045542D1 (de) Leistungshalbleiteranordnung mit einem Ballastwiderstandsbereich
EP1292027A4 (de) Leistungshalbleiter-bauelement
DE60227040D1 (de) Halbleitervorrichtung mit verbesserter ESD-Beständigkeitsspannung
DE60023399D1 (de) Stromversorgungsgerät
DE60008047D1 (de) Feldeffekt-Halbleiteranordnung
DE60231358D1 (de) Halbleiter-Schaltvorrichtung
DE60136261D1 (de) Halbleiterbauelement mit Strombegrenzungstruktur
DE60103580D1 (de) Stromversorgungsgerät

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law

Ref document number: 10196990

Country of ref document: DE

Date of ref document: 20031023

Kind code of ref document: P

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20110701