DE102004019435A1 - An einer Kühlrippe angeordnetes Bauelement - Google Patents

An einer Kühlrippe angeordnetes Bauelement Download PDF

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Publication number
DE102004019435A1
DE102004019435A1 DE200410019435 DE102004019435A DE102004019435A1 DE 102004019435 A1 DE102004019435 A1 DE 102004019435A1 DE 200410019435 DE200410019435 DE 200410019435 DE 102004019435 A DE102004019435 A DE 102004019435A DE 102004019435 A1 DE102004019435 A1 DE 102004019435A1
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DE
Germany
Prior art keywords
layer
insulating material
electrically insulating
contact surface
electrical contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE200410019435
Other languages
German (de)
English (en)
Inventor
Markus Frühauf
Kurt GÖPFRICH
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE200410019435 priority Critical patent/DE102004019435A1/de
Priority to PCT/EP2005/051652 priority patent/WO2005101490A2/de
Publication of DE102004019435A1 publication Critical patent/DE102004019435A1/de
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/2401—Structure
    • H01L2224/24011—Deposited, e.g. MCM-D type
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/2401—Structure
    • H01L2224/2402—Laminated, e.g. MCM-L type
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/2405—Shape
    • H01L2224/24051—Conformal with the semiconductor or solid-state device
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/24226—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
    • H—ELECTRICITY
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    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/01—Chemical elements
    • H01L2924/0101—Neon [Ne]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01052—Tellurium [Te]
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    • H01L2924/01061—Promethium [Pm]
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    • H01L2924/01068—Erbium [Er]
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    • H01L2924/01074—Tungsten [W]
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    • H01L2924/01075—Rhenium [Re]
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    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
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    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
DE200410019435 2004-04-19 2004-04-19 An einer Kühlrippe angeordnetes Bauelement Withdrawn DE102004019435A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE200410019435 DE102004019435A1 (de) 2004-04-19 2004-04-19 An einer Kühlrippe angeordnetes Bauelement
PCT/EP2005/051652 WO2005101490A2 (de) 2004-04-19 2005-04-14 An einer kühlrippe angeordnetes bauelement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE200410019435 DE102004019435A1 (de) 2004-04-19 2004-04-19 An einer Kühlrippe angeordnetes Bauelement

Publications (1)

Publication Number Publication Date
DE102004019435A1 true DE102004019435A1 (de) 2005-11-03

Family

ID=34981674

Family Applications (1)

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DE200410019435 Withdrawn DE102004019435A1 (de) 2004-04-19 2004-04-19 An einer Kühlrippe angeordnetes Bauelement

Country Status (2)

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DE (1) DE102004019435A1 (es)
WO (1) WO2005101490A2 (es)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005053396A1 (de) * 2005-11-09 2007-05-16 Semikron Elektronik Gmbh Schaltungseinrichtung, insbesondere Frequenzumrichter
US8823175B2 (en) 2012-05-15 2014-09-02 Infineon Technologies Ag Reliable area joints for power semiconductors

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5293301A (en) * 1990-11-30 1994-03-08 Shinko Electric Industries Co., Ltd. Semiconductor device and lead frame used therein
DE10058446A1 (de) * 1999-11-24 2001-05-31 Denso Corp Halbleitervorrichtung mit Abstrahlungsstruktur, sowie Verfahren zu ihrer Herstellung
WO2003030247A2 (de) * 2001-09-28 2003-04-10 Siemens Aktiengesellschaft Verfahren zum kontaktieren elektrischer kontaktflächen eines substrats und vorrichtung aus einem substrat mit elektrischen kontaktflächen

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JPS6188547A (ja) * 1984-10-05 1986-05-06 Fujitsu Ltd 半導体装置
US5229916A (en) * 1992-03-04 1993-07-20 International Business Machines Corporation Chip edge interconnect overlay element
US5731633A (en) * 1992-09-16 1998-03-24 Gary W. Hamilton Thin multichip module
US5545924A (en) * 1993-08-05 1996-08-13 Honeywell Inc. Three dimensional package for monolithic microwave/millimeterwave integrated circuits
US6002589A (en) * 1997-07-21 1999-12-14 Rambus Inc. Integrated circuit package for coupling to a printed circuit board
KR100236671B1 (ko) * 1997-09-09 2000-01-15 윤종용 인쇄회로기판과 방열판을 구비하는 수직실장형 반도체 칩패키지 및 그를 포함하는 패키지 모듈
US5963427A (en) * 1997-12-11 1999-10-05 Sun Microsystems, Inc. Multi-chip module with flexible circuit board
US6449159B1 (en) * 2000-05-03 2002-09-10 Rambus Inc. Semiconductor module with imbedded heat spreader
FR2818801B1 (fr) * 2000-12-21 2003-04-04 Gemplus Card Int Interconnexion par organe d'isolation decoupe et cordon de conduction

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5293301A (en) * 1990-11-30 1994-03-08 Shinko Electric Industries Co., Ltd. Semiconductor device and lead frame used therein
DE10058446A1 (de) * 1999-11-24 2001-05-31 Denso Corp Halbleitervorrichtung mit Abstrahlungsstruktur, sowie Verfahren zu ihrer Herstellung
WO2003030247A2 (de) * 2001-09-28 2003-04-10 Siemens Aktiengesellschaft Verfahren zum kontaktieren elektrischer kontaktflächen eines substrats und vorrichtung aus einem substrat mit elektrischen kontaktflächen

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005053396A1 (de) * 2005-11-09 2007-05-16 Semikron Elektronik Gmbh Schaltungseinrichtung, insbesondere Frequenzumrichter
DE102005053396B4 (de) * 2005-11-09 2010-04-15 Semikron Elektronik Gmbh & Co. Kg Schaltungseinrichtung, insbesondere Frequenzumrichter
US8823175B2 (en) 2012-05-15 2014-09-02 Infineon Technologies Ag Reliable area joints for power semiconductors
DE102013208818B4 (de) 2012-05-15 2023-12-28 Infineon Technologies Ag Leistungshalbleitermodul und Verfahren zur Fertigung eines Leistungshalbleitermoduls

Also Published As

Publication number Publication date
WO2005101490A2 (de) 2005-10-27
WO2005101490A3 (de) 2006-04-13

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