DE102004019442A1 - An planarer Verbindung angeordneter Kühlkörper - Google Patents

An planarer Verbindung angeordneter Kühlkörper Download PDF

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Publication number
DE102004019442A1
DE102004019442A1 DE200410019442 DE102004019442A DE102004019442A1 DE 102004019442 A1 DE102004019442 A1 DE 102004019442A1 DE 200410019442 DE200410019442 DE 200410019442 DE 102004019442 A DE102004019442 A DE 102004019442A DE 102004019442 A1 DE102004019442 A1 DE 102004019442A1
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Germany
Prior art keywords
layer
insulating material
electrically insulating
substrate
component
Prior art date
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Ceased
Application number
DE200410019442
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German (de)
English (en)
Inventor
Markus Frühauf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
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Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE200410019442 priority Critical patent/DE102004019442A1/de
Publication of DE102004019442A1 publication Critical patent/DE102004019442A1/de
Ceased legal-status Critical Current

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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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DE200410019442 2004-04-19 2004-04-19 An planarer Verbindung angeordneter Kühlkörper Ceased DE102004019442A1 (de)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005053396A1 (de) * 2005-11-09 2007-05-16 Semikron Elektronik Gmbh Schaltungseinrichtung, insbesondere Frequenzumrichter
WO2008040596A2 (de) * 2006-09-29 2008-04-10 Siemens Aktiengesellschaft Kühlkörper zur kühlung eines elektrischen bauelementes
EP3340293A1 (de) * 2016-12-20 2018-06-27 Siemens Aktiengesellschaft Halbleitermodul mit stützstruktur auf der unterseite

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5293301A (en) * 1990-11-30 1994-03-08 Shinko Electric Industries Co., Ltd. Semiconductor device and lead frame used therein
DE10058446A1 (de) * 1999-11-24 2001-05-31 Denso Corp Halbleitervorrichtung mit Abstrahlungsstruktur, sowie Verfahren zu ihrer Herstellung
WO2003030247A2 (de) * 2001-09-28 2003-04-10 Siemens Aktiengesellschaft Verfahren zum kontaktieren elektrischer kontaktflächen eines substrats und vorrichtung aus einem substrat mit elektrischen kontaktflächen

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5293301A (en) * 1990-11-30 1994-03-08 Shinko Electric Industries Co., Ltd. Semiconductor device and lead frame used therein
DE10058446A1 (de) * 1999-11-24 2001-05-31 Denso Corp Halbleitervorrichtung mit Abstrahlungsstruktur, sowie Verfahren zu ihrer Herstellung
WO2003030247A2 (de) * 2001-09-28 2003-04-10 Siemens Aktiengesellschaft Verfahren zum kontaktieren elektrischer kontaktflächen eines substrats und vorrichtung aus einem substrat mit elektrischen kontaktflächen

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005053396A1 (de) * 2005-11-09 2007-05-16 Semikron Elektronik Gmbh Schaltungseinrichtung, insbesondere Frequenzumrichter
DE102005053396B4 (de) * 2005-11-09 2010-04-15 Semikron Elektronik Gmbh & Co. Kg Schaltungseinrichtung, insbesondere Frequenzumrichter
WO2008040596A2 (de) * 2006-09-29 2008-04-10 Siemens Aktiengesellschaft Kühlkörper zur kühlung eines elektrischen bauelementes
WO2008040596A3 (de) * 2006-09-29 2008-05-22 Siemens Ag Kühlkörper zur kühlung eines elektrischen bauelementes
EP3340293A1 (de) * 2016-12-20 2018-06-27 Siemens Aktiengesellschaft Halbleitermodul mit stützstruktur auf der unterseite
WO2018114651A1 (de) * 2016-12-20 2018-06-28 Siemens Aktiengesellschaft Halbleitermodul mit stützstruktur auf der unterseite
CN110100308A (zh) * 2016-12-20 2019-08-06 西门子股份公司 底侧具有支撑结构的半导体模块
US10699984B2 (en) 2016-12-20 2020-06-30 Siemens Aktiengesellschaft Semiconductor module with a supporting structure on the bottom side
CN110100308B (zh) * 2016-12-20 2020-09-22 西门子股份公司 底侧具有支撑结构的半导体模块

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