DE102004029102A1 - Substratbearbeitungseinrichtung und Substratbearbeitungsverfahren - Google Patents

Substratbearbeitungseinrichtung und Substratbearbeitungsverfahren Download PDF

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Publication number
DE102004029102A1
DE102004029102A1 DE102004029102A DE102004029102A DE102004029102A1 DE 102004029102 A1 DE102004029102 A1 DE 102004029102A1 DE 102004029102 A DE102004029102 A DE 102004029102A DE 102004029102 A DE102004029102 A DE 102004029102A DE 102004029102 A1 DE102004029102 A1 DE 102004029102A1
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Germany
Prior art keywords
temperature
substrate processing
substrate
substrate table
target temperature
Prior art date
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Granted
Application number
DE102004029102A
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English (en)
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DE102004029102B4 (de
Inventor
Kenichi Shigetomi
Nobuyuki Sata
Toshichika Takei
Masatoshi Kaneda
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of DE102004029102A1 publication Critical patent/DE102004029102A1/de
Application granted granted Critical
Publication of DE102004029102B4 publication Critical patent/DE102004029102B4/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support

Abstract

Unmittelbar nachdem ein kaltes Substrat auf einen Substrattisch aufgesetzt wurde, wird eine hohe elektrische Leistung einem Heizelement zugeführt, das in den Substrattisch eingebettet ist, über einen Zeitraum, so dass die Temperatur des Substrattisches eine Solltemperatur überschreitet, und danach wird eine elektrische Leistung, die gleich Null oder sehr klein ist, dem Heizelement über einen Zeitraum zugeführt, so dass die Temperatur des Substrattisches auf die Solltemperatur abgesenkt wird, während die Temperatur des Substrats weiterhin bis zur Solltemperatur ansteigt. Wenn sowohl die Temperatur des Substrattisches als auch jene des Substrats sich annähernd an die Solltemperatur angenähert haben, nachdem der Zeitraum abgelaufen ist, wird die Steuerung der elektrischen Leistung an eine PID-Steuerung übergeben.
DE102004029102A 2003-06-16 2004-06-16 Substratbearbeitungseinrichtung und Substratbearbeitungsverfahren Expired - Fee Related DE102004029102B4 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003171263 2003-06-16
JP2003/171263 2003-06-16
JP2004136555A JP4384538B2 (ja) 2003-06-16 2004-04-30 基板処理装置及び基板処理方法
JP2004/136555 2004-04-30

Publications (2)

Publication Number Publication Date
DE102004029102A1 true DE102004029102A1 (de) 2005-05-04
DE102004029102B4 DE102004029102B4 (de) 2013-07-18

Family

ID=33513420

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102004029102A Expired - Fee Related DE102004029102B4 (de) 2003-06-16 2004-06-16 Substratbearbeitungseinrichtung und Substratbearbeitungsverfahren

Country Status (3)

Country Link
US (1) US7049553B2 (de)
JP (1) JP4384538B2 (de)
DE (1) DE102004029102B4 (de)

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CN103019270A (zh) * 2012-09-29 2013-04-03 中国北车集团大连机车研究所有限公司 具有低温预加热功能的机车司机显示单元

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JP4486410B2 (ja) * 2004-05-24 2010-06-23 東京エレクトロン株式会社 熱処理装置及び熱処理方法
JP4593362B2 (ja) * 2005-05-20 2010-12-08 株式会社エムテーシー フォトマスク製造用加熱冷却方法およびこの方法を実現する加熱冷却システム
US9457442B2 (en) * 2005-06-18 2016-10-04 Futrfab, Inc. Method and apparatus to support process tool modules in a cleanspace fabricator
US9159592B2 (en) 2005-06-18 2015-10-13 Futrfab, Inc. Method and apparatus for an automated tool handling system for a multilevel cleanspace fabricator
US9059227B2 (en) 2005-06-18 2015-06-16 Futrfab, Inc. Methods and apparatus for vertically orienting substrate processing tools in a clean space
US10627809B2 (en) 2005-06-18 2020-04-21 Frederick A. Flitsch Multilevel fabricators
US9339900B2 (en) 2005-08-18 2016-05-17 Futrfab, Inc. Apparatus to support a cleanspace fabricator
US7513822B2 (en) 2005-06-18 2009-04-07 Flitsch Frederick A Method and apparatus for a cleanspace fabricator
US11024527B2 (en) 2005-06-18 2021-06-01 Frederick A. Flitsch Methods and apparatus for novel fabricators with Cleanspace
US10651063B2 (en) 2005-06-18 2020-05-12 Frederick A. Flitsch Methods of prototyping and manufacturing with cleanspace fabricators
JP2007079897A (ja) * 2005-09-14 2007-03-29 Omron Corp 温度制御方法、温度調節器および熱処理装置
JP4672538B2 (ja) * 2005-12-06 2011-04-20 東京エレクトロン株式会社 加熱処理装置
JP5105396B2 (ja) * 2006-04-12 2012-12-26 東京応化工業株式会社 加熱処理装置
US20070251939A1 (en) * 2006-04-27 2007-11-01 Applied Materials, Inc. Control scheme for cold wafer compensation on a lithography track
JP4786499B2 (ja) * 2006-10-26 2011-10-05 東京エレクトロン株式会社 熱処理板の温度設定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置
JP4796476B2 (ja) * 2006-11-07 2011-10-19 東京エレクトロン株式会社 熱処理板の温度設定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置
JP4531778B2 (ja) 2007-02-09 2010-08-25 東京エレクトロン株式会社 温度制御方法、温度調節器および加熱処理装置
US7910863B2 (en) * 2007-09-20 2011-03-22 Tokyo Electron Limited Temperature setting method of thermal processing plate, computer-readable recording medium recording program thereon, and temperature setting apparatus for thermal processing plate
JP4977747B2 (ja) * 2009-12-10 2012-07-18 東京エレクトロン株式会社 基板の処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
JP5026549B2 (ja) * 2010-04-08 2012-09-12 シャープ株式会社 加熱制御システム、それを備えた成膜装置、および温度制御方法
JP5174098B2 (ja) * 2010-08-09 2013-04-03 東京エレクトロン株式会社 熱処理方法及びその熱処理方法を実行させるためのプログラムを記録した記録媒体並びに熱処理装置
TW201421181A (zh) * 2012-09-14 2014-06-01 Kaz Europe Sa 具有節能操作之加熱器及相關方法
US10006717B2 (en) * 2014-03-07 2018-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Adaptive baking system and method of using the same
JP6442339B2 (ja) * 2015-03-26 2018-12-19 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
US10186437B2 (en) * 2015-10-05 2019-01-22 Lam Research Corporation Substrate holder having integrated temperature measurement electrical devices
JP6647931B2 (ja) * 2016-03-16 2020-02-14 株式会社Kelk 半導体ウェーハの温度制御装置、および半導体ウェーハの温度制御方法
CN106292773B (zh) * 2016-08-19 2018-09-14 青岛海信移动通信技术股份有限公司 温度调整装置及温度调整方法
JP6737094B2 (ja) * 2016-09-12 2020-08-05 東京エレクトロン株式会社 基板加熱装置、基板加熱方法及び記憶媒体
JP7256034B2 (ja) * 2019-03-04 2023-04-11 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
JP7376294B2 (ja) 2019-09-24 2023-11-08 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置、熱処理システムおよび熱処理方法
TWI753401B (zh) * 2019-04-26 2022-01-21 日商斯庫林集團股份有限公司 熱處理裝置、熱處理系統及熱處理方法
JP7198718B2 (ja) * 2019-04-26 2023-01-04 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
IT201900007049A1 (it) * 2019-05-21 2020-11-21 F Lli Pedrotti S R L Un metodo per mantenere in una camera di lavoro il valore di un parametro in un intorno di un valore di set-point nonché sistema impiegabile in tale metodo

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103019270A (zh) * 2012-09-29 2013-04-03 中国北车集团大连机车研究所有限公司 具有低温预加热功能的机车司机显示单元
CN103019270B (zh) * 2012-09-29 2015-09-30 中国北车集团大连机车研究所有限公司 具有低温预加热功能的机车司机显示单元

Also Published As

Publication number Publication date
JP2005033178A (ja) 2005-02-03
DE102004029102B4 (de) 2013-07-18
US20040250762A1 (en) 2004-12-16
US7049553B2 (en) 2006-05-23
JP4384538B2 (ja) 2009-12-16

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