DE102004057804A1 - Housing body for semiconductor chip e.g. light emitting diode, has poured ceramic material e.g. aluminum oxide or zirconium oxide, in which lead frame is partially embedded, and recess with material that partially surrounds chip - Google Patents
Housing body for semiconductor chip e.g. light emitting diode, has poured ceramic material e.g. aluminum oxide or zirconium oxide, in which lead frame is partially embedded, and recess with material that partially surrounds chip Download PDFInfo
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- DE102004057804A1 DE102004057804A1 DE102004057804A DE102004057804A DE102004057804A1 DE 102004057804 A1 DE102004057804 A1 DE 102004057804A1 DE 102004057804 A DE102004057804 A DE 102004057804A DE 102004057804 A DE102004057804 A DE 102004057804A DE 102004057804 A1 DE102004057804 A1 DE 102004057804A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
- H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
- H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
- H01L2224/48479—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball on the semiconductor or solid-state body
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
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- H01L2924/1204—Optical Diode
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
Description
Die Erfindung betrifft einen Gehäusekörper für einen Halbleiterchip sowie ein Verfahren zu dessen Herstellung.The The invention relates to a housing body for a Semiconductor chip and a method for its production.
In
der Druckschrift
Ferner ist aus der Druckschrift Patent Abstracts of Japan Nr. JP 09-045965 ein Gehäusekörper aus Keramikmaterial für eine LED bekannt, der aus einem Green-sheet hergestellt wird.Further is from the document Patent Abstracts of Japan No. JP 09-045965 a housing body Ceramic material for an LED made from a green sheet.
Es ist Aufgabe der vorliegenden Erfindung, einen Gehäusekörper, der sich möglichst einfach herstellen lässt, sowie ein Verfahren zu dessen Herstellung anzugeben.It Object of the present invention, a housing body, the as possible easy to make, and to specify a method for its production.
Diese Aufgaben werden durch einen Gehäusekörper mit den Merkmalen des Patentanspruchs 1 und durch ein Verfahren mit den Merkmalen des Patentanspruchs 17 gelöst. Vorteilhafte Weiterbildungen der Erfindung sind Gegenstand der abhängigen Ansprüche.These Tasks are through a housing body with the features of claim 1 and by a method with the features of claim 17 solved. Advantageous developments The invention is the subject of the dependent claims.
Ein Gehäusekörper für einen Halbleiterchip, beispielsweise eine Lichtemissionsdiode, weist Keramikmaterial auf.One Housing body for one Semiconductor chip, for example a light emitting diode, comprises ceramic material on.
In einem Gieß-Verfahren, beispielsweise einem Spritzguss- oder Spritzpressverfahren, wird ein Leiterrahmen mit diesem Keramikmaterial umgossen, so dass ein Gehäusekörper entsteht, der gegossenes Keramikmaterial enthält und außerdem einen Leiterrahmen, der teilweise eingebettet ist. Die teilweise Einbettung des Leiterrahmens ermöglicht beispielsweise eine Kontaktierung des Leiterrahmens von außen, so dass ein Halbleiterchip in Betrieb genommen werden kann.In a casting process, for example, an injection molding or Transfer molding process, becomes a lead frame with this ceramic material poured around, so that a housing body is formed, contains the cast ceramic material and also has a lead frame, which is partially embedded. The partial embedding of the lead frame allows For example, a contacting of the leadframe from the outside, so that a semiconductor chip can be put into operation.
Ein Gehäusekörper, der Keramikmaterial, bevorzugt mit Al2O3 oder ZrO2 oder einer Mischung aus beiden, enthält, kann sich beispielsweise als verschleißfest, korrosionsbeständig, W-stabil und vor allem sehr gut wärmeleitend erweisen, wodurch eventuell auf eine Wärmesenke verzichtet werden kann. Dadurch kann möglicherweise ein Herstellungsschritt, nämlich die Einbringung einer zusätzlichen Wärmesenke, im Herstellungsverfahren eingespart werden.One Housing body, the Ceramic material, preferably with Al2O3 or ZrO2 or a mixture of both, contains, For example, it can be used as wear-resistant, corrosion-resistant, W-stable and above all very good thermal conductivity prove, which may be dispensed with a heat sink can. This may possibly a manufacturing step, namely the introduction of an additional heat sink, be saved in the manufacturing process.
In einer bevorzugten Ausführung weist der Gehäusekörper eine Ausnehmung auf, die zur Aufnahme eines Halbleiterchips, beispielsweise einer Lichtemissionsdiode, vorgesehen ist. Durch ein Gieß-Verfahren, wie beispielsweise Spritzgießen bzw. Spritzpressen, sind komplexe Gehäusegeometrien realisierbar. Besonders bevorzugt weist der Gehäusekörper allerdings eine symmetrische Form auf, ebenso die Ausnehmung. Vorzugsweise ist diese im Bezug auf den Gehäusekörper zentriert angeordnet und rotationssymmetrisch ausgebildet.In a preferred embodiment the housing body has a Recess, which is for receiving a semiconductor chip, for example a light emitting diode is provided. Through a casting process, such as injection molding or Transfer presses are complex housing geometries realizable. However, the housing body particularly preferably has a symmetrical Shape up, as well as the recess. Preferably, this is in relation centered on the case body arranged and formed rotationally symmetrical.
Bei einer besonders bevorzugten Verwendung des Gehäusekörpers für einen strahlungsemittierenden Halbleiterchip, weist die Ausnehmung ein Strahlungsaustrittsfenster auf. Die Innenfläche der Ausnehmung dient hierbei vorzugsweise als Reflektor.at a particularly preferred use of the housing body for a radiation-emitting Semiconductor chip, the recess has a radiation exit window on. The inner surface The recess preferably serves as a reflector.
Der Reflexionsgrad des Reflektors kann durch Partikel, beispielweise aus TiO2, gesteigert werden, die vorzugsweise im gesamten Gehäusekörper verteilt sind. Dadurch kann die gerichtete Lichtemission erhöht werden.Of the Reflectance of the reflector can be through particles, for example TiO2, which preferably distributed throughout the housing body are. As a result, the directional light emission can be increased.
Um den Chip vor äußeren Einwirkungen zu schützen, erweist es sich als günstig, diesen mit einem Verguss zu umhüllen. Dieser Verguss kann zugleich als Füllmaterial für die gesamte Ausnehmung dienen. Als Vergussmaterialien eignen sich Reaktionsharze wie beispielweise Epoxidharze, Acrylharze, Silikonharze und Polyurethanharze. Um eine besonders gute Haftung zwischen den Flächen der Ausnehmung und dem Vergussmaterial zu erzielen, kann vorzugsweise Silikon verwendet werden.Around the chip from external influences to protect, proves to be favorable To wrap this with a potting. This potting can also be used as filler for the whole Recess serve. As potting materials are reactive resins such as epoxy resins, acrylic resins, silicone resins and polyurethane resins. To a particularly good adhesion between the surfaces of the recess and the To achieve potting material, preferably silicone can be used become.
Ferner können sich Hybridmaterialien wie z. B. Mischungen aus Epoxidharzen und Silikon als besonders geeignet herausstellen, da sie gegenüber Silikon die Vorteile kürzerer Aushärtezeiten und besserer Entformbarkeit aufweisen und gegenüber Epoxidharzen den Vorteil gesteigerter UV-Stabilität.Further can Hybrid materials such. B. mixtures of epoxy resins and Silicone prove to be particularly suitable because they are silicone the advantages of shorter curing and better mold release and the advantage over epoxy resins increased UV stability.
In der Ausnehmung ist für den Chip vorzugsweise eine Montagefläche vorgesehen, die sich bei einem beispielsweise einteiligen Leiterrahmen, der an die Ausnehmung grenzt, besonders bevorzugt auf dem Leiterrahmen befindet. Vorteilhafterweise ist der Leiterrahmen mit einer Kontaktschicht, beispielsweise aus Silber, Gold oder Nickel-Palladium versehen. Denkbar ist ferner, dass an die Ausnehmung eine Wärmesenke grenzt, die wahlweise zum Leiterrahmen als Montagefläche verwendet werden kann.In the recess is for the chip is preferably provided a mounting surface, which is at a For example, one-piece lead frame adjacent to the recess, particularly preferably located on the lead frame. advantageously, is the leadframe with a contact layer, for example Silver, gold or nickel-palladium Mistake. It is also conceivable that the recess a heat sink borders, which optionally uses the lead frame as a mounting surface can be.
Außerdem lassen sich bekannte und herkömmlich eingesetzte Methoden zur Montage und zur elektrischen Kontaktierung von Chips anwenden.In addition, let familiar and conventional methods used for assembly and electrical contact to apply chips.
In einer bevorzugten Ausführung ist der Leiterrahmen einteilig und selbsttragend ausgebildet. Diese mögliche Ausbildung des Leiterrahmens als ein zusammenhängendes, vorzugsweise streifenförmiges Teil erweist sich als vorteilhaft für die Gesamtstabilität des Gehäusekörpers, in den der Leiterrahmen eingebettet ist.In a preferred embodiment, the lead frame is formed in one piece and self-supporting. This possible formation of the lead frame as a coherent, preferably streifenför miges part proves to be advantageous for the overall stability of the housing body in which the lead frame is embedded.
Auch erweisen sich Vertiefungen, die in den Leiterrahmen eingebracht und beim Umspritzen des Leiterrahmens mit Keramikmaterial gefüllt werden, als vorteilhaft für die Gesamtstabilität. Sie verringern die Gefahr einer Relativbewegung zwischen Gehäusekörper und Leiterrahmen. Besonders bevorzugt wird der Leiterrahmen vor dem Umspritzen mit Keramikmaterial separat vorgeformt, wobei die Vertiefungen erzeugt werden können. Hierbei stellt es sich als besonders günstig heraus, den Leiterrahmen mit einer endlichen Dicke zu formen.Also turn out wells that are introduced into the lead frame and are filled in the encapsulation of the lead frame with ceramic material, as advantageous for the overall stability. They reduce the risk of relative movement between the housing body and Leadframe. Particularly preferred is the lead frame before the Encapsulation with ceramic material preformed separately, with the wells can be generated. This turns out to be particularly favorable, the lead frame to form with a finite thickness.
Die Dicke des Leiterrahmens kann durch partielles Ausdünnen zwischen dessen beiden Enden variiert werden, was ebenfalls den Vorteil einer verbesserten Haftung hat.The Thickness of the lead frame may be due to partial thinning in between whose two ends are varied, which also has the advantage of improved Liability.
In einer möglichen Ausführung werden durch das Stanzen des Leiterrahmens hakenförmige Stanzgraten erzeugt, die eine allzu leichte Ablösung des Keramikmaterials vom Leiterrahmen erschweren.In a possible execution become by punching the lead frame hook-shaped punching burrs produced, the too easy detachment of the ceramic material from Make ladder frames difficult.
Um die Haftung weiter zu verbessern, können auf dem Leiterrahmen Haftvermittler, beispielsweise Silikate, aufgetragen sein.Around to further improve adhesion, adhesion promoters, on the lead frame, For example, silicates, be applied.
Es wird ein Verfahren zur Herstellung eines Gehäusekörpers angegeben, bei dem zunächst ein Leiterrahmen bereitgestellt und in eine Spritzform eingelegt wird. Vorzugsweise wird der Leiterrahmen vorgeheizt, bevor er in die Spritzform eingelegt wird. Dadurch kann beispielsweise einem Nachstellen bzw. Anpassen des Gusswerkzeugs vorgebeugt werden, wenn sich der Leiterrahmen aufgrund einer Temperaturerhöhung beim Einfüllen des Keramikmaterials ausdehnt. Ferner kann dadurch verhindert werden, dass aufgrund der kontinuierlichen Erwärmung des Leiterrahmens beim Einfüllen der Gussmasse Wärmeunterschiede entstehen, die ein unterschiedliches Fließverhalten des Keramikmaterials bewirken.It is a method for producing a housing body specified in which initially a lead frame prepared and placed in an injection mold. Preferably the leadframe is preheated before it is inserted into the mold becomes. This can for example be readjusted or adjusted of the casting tool can be prevented when the lead frame due to a temperature increase when filling of the ceramic material expands. Furthermore, this can be prevented that due to the continuous heating of the lead frame during pour in the casting compound heat differences arise, which cause a different flow behavior of the ceramic material.
Der Leiterrahmen kann vor Beginn oder nach Abschluss des Keramikspritzgießens (bzw. -pressens) mit einer bondfähigen Schicht, beispielsweise aus Silber, Gold oder Nickel-Palladium, versehen werden.Of the Leadframe can be used before or after ceramic injection molding (or -pressens) with a bondable Layer, for example, made of silver, gold or nickel-palladium.
Die Spritzform bildet um den Leiterrahmen vorzugsweise eine Kavität zur Ausbildung des Gehäusekörpers. Mit Hilfe einer Spritzdüse wird eine Spritzmasse eingefüllt und die Kavität der Spritzform gefüllt. Es entsteht ein „premolded Leadframe", was bedeutet, dass der Leiterrahmen vor der Montage eines Chips mit einem Gehäusekörper umspritzt wird.The Injection mold preferably forms a cavity around the leadframe for formation of the housing body. With Help of a spray nozzle a spray mass is filled and the cavity the injection mold filled. It creates a "premolded Leadframe ", which means that the leadframe is overmolded with a housing body prior to mounting a chip becomes.
Durch den Verfahrensschritt des Aussinters (s.u.) entweichen thermische Binder (z. B. Wachse), was einen Materialschwund zur Folge hat, wodurch das Keramikmaterial auf den Leiterrahmen aufschrumpft und besser haftet.By the process step of sintering out (s.u.) escape thermal Binders (eg waxes), which results in a loss of material, whereby the ceramic material shrinks on the lead frame and better liable.
Der Gehäusekörper wird entformt, sobald das Gießmaterial auf ausreichende Entformfestigkeit abgekühlt ist, was vorteilhafter Weise ohne wesentliche Wartezeit nach der Herstellung erfolgen kann. Dadurch ergeben sich kurze Prozesszeiten, die zu Kostenvorteilen führen.Of the Housing body is demolded as soon as the casting material cooled to sufficient Entformfestigkeit, which is more advantageous Way can be done without significant waiting time after manufacture. Thereby This results in short process times, which lead to cost advantages.
Des weiteren ergeben sich Kostenvorteile, weil sich das Keramik-Spritzguss(bzw. -press-)verfahren als Produktionstechnik für die Massenfertigung eignet, beispielsweise in „Reel to Reel" (Endlosband)- Prozessen. Aber auch „Batch" prozesse (Nutzenfertigung) sind möglich.Of further cost advantages arise because the ceramic injection molding (or. -press-) method is suitable as a production technology for mass production, for example in "Reel to Reel "(endless belt) - Processes. But also "batch" processes (profit production) are possible.
Weitere
Merkmale, Vorteile und Weiterbildungen eines Gehäusekörpers ergeben sich aus den nachfolgend
in Verbindung mit den
Es zeigenIt demonstrate
Der
in
In
dem Ausführungsbeispiel
ist der Leiterrahmen einteilig und weist Verbiegungen
Die Verbiegungen können zu einer verbesserten Haftung zwischen dem Leiterrahmen und dem Gehäusekörper beitragen und erschweren eine mögliche Relativbewegung zwischen Leiterrahmen und Gehäusekörper.The Bends can contribute to improved adhesion between the leadframe and the housing body and complicate a possible Relative movement between the lead frame and the housing body.
Ebenso
können
mechanische Verankerungen
In
Vorteilhafterweise
wird der Halbleiterchip
In
In
den Gehäusekörper
Die
Wärmesenke
Der
Auflagefläche
Im
Unterschied zu dem zuvor beschriebenen Ausführungsbeispiel weist der Gehäusekörper
In
Wie
bei dem zuvor beschriebenen Ausführungsbeispiel
ist ein Leiterrahmen
Auf
der Chipmontagefläche
Der
Gehäusekörper des
Bauelements entspricht im wesentlichen dem in
Weiterhin
ist das Strahlungsaustrittsfenster
Der
Bonddrahtanschlussbereich
In
Wie
bei dem in
Im
Unterschied zu dem vorigen Ausführungsbeispiel
weist der so gebildete Gesamtreflektor
Zum
Schutz des Halbleiterchips ist das Strahlungsaustrittsfenster
Zur
Herstellung eines solchen Bauelements wird zunächst für den Leiterrahmen
Im
nächsten
Schritt wird auf der Wärmesenke
Alternativ
kann nach der Verbindung von Trägerteil
und Wärmesenke
In
Beide Anschlussstreifen weisen Streifenstärken auf, die sich von der Mitte bis zum Rand des Gehäusekörpers ändern. Der Übergang zwischen verschiedenen Streifenstärken kann wie in diesem Ausführungsbeispiel „parabelförmig" verlaufen. Denkbar ist aber auch ein stufenförmiger Übergang.Both Terminal strips have strip thicknesses that differ from the Change the center to the edge of the housing body. The transition between different strip thicknesses can be "parabolic" as in this embodiment but also a step-shaped transition.
Die unterschiedlichen Metallstärken des Leiterrahmens können beispielsweise durch Anwendung eines mechanischen Drucks in einer Phase des Herstellungsprozesses erfolgen, in der das Leiterrahmenmaterial noch formbar ist.The different metal thicknesses of the lead frame for example by applying a mechanical pressure in one Phase of the manufacturing process, in which the lead frame material still malleable.
Mittels dieser partiellen Ausdünnung des Leiterrahmens kann dessen Oberfläche vergrößert werden, wodurch eine bessere Haftung zwischen dem Leiterrahmen und dem Gehäusekörper zustande kommt. Ferner kann die Gefahr einer Relativbewegung zwischen Gehäusekörper und Leiterrahmen durch formschlüssiges „Einrasten" der Vergussmasse vermindert werden.through this partial thinning of the lead frame, the surface of which can be increased, whereby a better Adhesion between the lead frame and the housing body comes about. Further can the risk of relative movement between the housing body and Lead frame by positive "locking" of the potting compound be reduced.
Die Erläuterung des Gehäusekörpers anhand der beschriebenen Ausführungsbeispiele stellt selbstverständlich keine Einschränkung des Gehäusekörpers auf diese Ausführungsbeispiele dar.The explanation of the housing body based the described embodiments of course no restriction of the housing body these embodiments represents.
Es wird ein Verfahrensablauf skizziert, der sich in folgende Schritte gliedert:
- – Das Keramikpulver wird mit einem thermoplastischen Kunststoff oder mit einem Wachs und verschiedenen Hilfsstoffen zu einem fließfähigen Compound vermischt,
- – in die Kavität der Spritzform wird ein vorzugsweise vorgeheizter Leiterrahmen eingebracht und das Compound eingefüllt,
- – der nur zur Formgebung benötigte Polymerbinder wird entweder durch Extraktion oder durch Pyrolyse oder eine Kombination beider Verfahren entfernt,
- – der entstandene Bräunling wird bei Temperaturen zwischen 300°C und 2000°C zum fertigen Gehäusekörper gesintert. Dabei kann ein thermisch zersetzbarer Binder (z. B. Wachs) verflüchtigt werden,
- – der Leiterrahmen wird mit einer Kontaktschicht versehen z. B. mit Silber, Gold oder Nickel-Palladium. Alternativ kann der Leiterrahmen bereits beschichtet in die Kavität der Spritzform eingebracht werden.
- The ceramic powder is mixed with a thermoplastic or with a wax and various excipients to form a flowable compound,
- - In the cavity of the injection mold, a preferably preheated lead frame is introduced and filled the compound,
- The polymer binder needed only for shaping is removed either by extraction or by pyrolysis or a combination of both methods,
- - The resulting Braunling is sintered at temperatures between 300 ° C and 2000 ° C to the finished housing body. In this case, a thermally decomposable binder (eg wax) can be volatilized,
- - The lead frame is provided with a contact layer z. As with silver, gold or nickel-palladium. Alternatively, the lead frame may already be coated in the cavity of the mold.
Claims (18)
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EP2109157A1 (en) * | 2006-12-28 | 2009-10-14 | Nichia Corporation | Light emitting device and method for manufacturing the same |
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DE102009012517A1 (en) * | 2009-03-10 | 2010-09-16 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component |
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DE102014111483A1 (en) * | 2014-08-12 | 2016-02-18 | Osram Opto Semiconductors Gmbh | Production of an optoelectronic component and optoelectronic component |
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DE102014111483A1 (en) * | 2014-08-12 | 2016-02-18 | Osram Opto Semiconductors Gmbh | Production of an optoelectronic component and optoelectronic component |
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DE102004057804B4 (en) | 2010-04-08 |
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