DE102008016525A1 - Monolithic optoelectronic semiconductor body, useful for illumination, includes layer sequence divided into partial segments and at least three contact pads and conductor planes - Google Patents

Abstract

A monolithic optoelectronic semiconductor body has a semiconductor layer sequence (600) divided into mutually insulated partial segments (691, 692), each with an electromagnetic radiation generating active layer (615); and at least three contact pads. Two conductor planes (660, 670) contact a first segment and first pad and a second segment and second pad respectively, and a third conductor plane (650) joins the segments together and contacts the third pad. A monolithic optoelectronic semiconductor body has a semiconductor layer sequence (600) divided into at least two mutually insulated partial segments (691, 692), each including an electromagnetic radiation (EMR) generating active layer (615); and at least three electrical contact pads. First and second conductor planes (660, 670) contact a first segment and first pad (661) and a second segment and second pad (671) respectively, and a third conductor plane (650) joins the segments together (to generate EMR) and contacts the third pad (651). The three planes are adjacent to a second main side, opposite to the first main side from which generated EMR is emitted. An independent claim is included for the production of the semiconductor body, by: (A) epitaxially growing the semiconductor layer sequence (600), including the active layer, on a substrate; (B) defining the mutually insulated partial segments (691, 692), for emitting EMR in the direction of a first main side; (C) forming the first and second conductor planes (660, 670), both on the opposite side of the sequence from the first side and respectively contacting the active layers of the first and second partial segments; (D) forming at least one third conductor plane, on the opposite side of the sequence from the first side and contacting the active layers of the two partial segments to couple the segments in series; and (E) forming the first, second and third contact pads (661, 671, 651), connected to the first, second and third conductor planes respectively.

Description

The The invention relates to an optoelectronic semiconductor body and a method for producing an optoelectronic semiconductor body.

Optoelectronic Semiconductor body, which in an operation an electromagnetic Emit radiation will be for a variety of different Light applications used. Offer such semiconductor body especially when a high luminous efficacy on a small Space is required. Examples of the use of Optoelectronic semiconductor bodies with a high light output can be found in projection applications and also in automotive areas. There they are used among other things for headlights.

at Such light applications should in addition to a high light output also a uniform as possible light emission to be guaranteed. In addition, the optoelectronic semiconductor body scalable, so the light intensity variable by adding or removing individual light-emitting Elements is scalable.

insofar There is therefore the need to have an optoelectronic semiconductor body indicate that compared to conventional lighting with improved efficiency in terms of luminous efficacy and Radiation characteristic with simultaneously higher drive flexibility are formed.

These Tasks are performed by an optoelectronic semiconductor body and by a method for producing such according to the independent claims solved. Embodiments and developments of the invention are each subject the subclaims, the disclosure of which is hereby expressly is included in the description.

In An embodiment includes an opto-electronic Semiconductor body, a semiconductor layer sequence, which in divided at least two electrically isolated from each other sub-segments is. The semiconductor layer sequence has a first main side, a second main page as well as in each subarea one for the production Electromagnetic radiation suitable active layer. In the Embodiment is the first main side of the semiconductor layer sequence for emission of electromagnetic radiation generated in the active layer intended.

The active layer may in this case have a pn junction, a double heterostructure, a single quantum well (SQW, single quantum well) or a multiple quantum well structure (MQW, multi quantum well) for generating radiation. The term quantum well structure has no significance with regard to the dimensionality of the quantization. It generally includes, among other things, quantum wells, quantum wires, quantum wells and quantum dots, and any combination of these structures. Their dimensionality can thus range from 0 dimensions in the case of quantum dots to 3 dimensions in the case of quantum wells. Examples of multiple quantum well structures are in the references WO 01/39282 . US 5,831,277 . US 6,172,382 as well as in the US 5,684,309 described. Their disclosure content is hereby incorporated by reference.

Of the Optoelectronic semiconductor body further comprises a first electrical contact, a second electrical contact and at least a third electrical contact. A first on the second main side adjacent arranged line level contacted a first of the at least two subsegments of the subdivided semiconductor layer sequence and the first electrical contact. It thus provides a link between the first of the at least two sub-segments and the first electrical Contact here. A second of the second main side adjacent arranged Management level contacts the second contact and a second one the at least two sub-segments electrically. After all the optoelectronic semiconductor body comprises a third, the second main side adjacently arranged line level. These connects the first and second sub-segments of the semiconductor layer sequence electrically to generate electromagnetic radiation with each other and also contacts the third contact.

In the proposed embodiment, therefore, in addition to at least three contacts on a surface of the semiconductor body and at least two conduction levels are provided, which are electrically connected to one of the contacts. The three line levels are facing away from the first main side of the semiconductor layer sequence. Moreover, one of the at least three line levels electrically connects the first and second sub-segments to one another for generating electromagnetic radiation. This realizes a series connection between the active layer of the first and second subsegments. The active Schich th of the two sub-segments are therefore connected to each other via the third line level such that they form a series connection. This ensures that the optoelectronic semiconductor body has a significantly lower current flow in egg nem operation, and drops over this a larger voltage.

Of the Optoelectronic semiconductor body according to the proposed The principle can thus be voltage-driven and low at the same time Streams are fed. This can be, for example elaborate driver stages and high-current sources through appropriate Replace high voltage sources, which are easier to use can. Due to the additional third contact, which contacts the management level connecting the two subsegments, In addition, a single control of the respective Subsegments possible. Each sub-segment of the optoelectronic Semiconductor body can thus be controlled individually. As well is a common control of both sub-segments via the formed series connection possible. By doing so leaves the light output of the optoelectronic semiconductor body vary.

By the training of management levels on the first main page On the opposite side is also the radiation on the first main side of the semiconductor layer sequence only insignificantly changed, because contacting and feeds not need to be guided through this page. The individual subsegments of the semiconductor layer sequence reach therefore a more uniform emission characteristic.

In In one embodiment, the semiconductor body is a thin-film light-emitting diode chip. In particular, it has a carrier substrate on its rear side on. In one embodiment, the different levels of management are at least in places between the semiconductor layer sequence and the carrier substrate arranged.

• – an einer zu einem Trägerelement, insbesondere dem Trägersubstrat, hingewandten Hauptfläche der strahlungserzeugenden Halbleiterschichtenfolge, bei der es sich insbesondere um eine strahlungserzeugende Epitaxie-Schichtenfolge handelt, ist eine reflektierende Schicht aufgebracht oder ausgebildet, die zumindest einen Teil der in der Halbleiterschichtenfolge erzeugten elektromagnetischen Strahlung in diese zurückreflektiert;
• – der Dünnfilm-Leuchtdiodenchip weist ein Trägerelement auf, bei dem es sich nicht um das Wachstumssubstrat handelt, auf dem die Halbleiterschichtenfolge epitaktisch gewachsen wurde, sondern um ein separates Trägerelement, das nachträglich an der Halbleiterschichtenfolge befestigt wurde;
• – die Halbleiterschichtenfolge weist eine Dicke im Bereich von 20 μm oder weniger, insbesondere im Bereich von 10 μm oder weniger auf;
• – die Halbleiterschichtenfolge ist frei von einem Aufwachssubstrat. Vorliegend bedeutet ”frei von einem Aufwachssubstrat”, dass ein gegebenenfalls zum Aufwachsen benutztes Aufwachssubstrat von der Halbleiterschichtenfolge entfernt oder zumindest stark gedünnt ist. Insbesondere ist es derart gedünnt, dass es für sich oder zusammen mit der Epitaxie-Schichtenfolge alleine nicht freitragend ist. Der verbleibende Rest des stark gedünnten Aufwachssubstrats ist insbesondere als solches für die Funktion eines Aufwachssubstrates ungeeignet; und
• – die Halbleiterschichtenfolge enthält mindestens eine Halbleiterschicht mit zumindest einer Fläche, die eine Durchmischungsstruktur aufweist, die im Idealfall zu einer annähernd ergodischen Verteilung des Lichtes in der Halbleiterschich tenfolge führt, das heißt, sie weist ein möglichst ergodisch stochastisches Streuverhalten auf.

A thin-film light-emitting diode chip is characterized by at least one of the following characteristic features:

• On a main surface of the radiation-generating semiconductor layer sequence facing a carrier element, in particular the carrier substrate, which is in particular a radiation-generating epitaxial layer sequence, a reflective layer is applied or formed which forms at least part of the electromagnetic radiation generated in the semiconductor layer sequence this reflects back;
• The thin-film light-emitting diode chip has a carrier element, which is not the growth substrate on which the semiconductor layer sequence has been epitaxially grown, but a separate carrier element which has subsequently been attached to the semiconductor layer sequence;
• The semiconductor layer sequence has a thickness in the range of 20 μm or less, in particular in the range of 10 μm or less;
• - The semiconductor layer sequence is free of a growth substrate. In the present context, "free from a growth substrate" means that a growth substrate which may be used for growth is removed from the semiconductor layer sequence or at least heavily thinned. In particular, it is thinned so that it alone or together with the epitaxial layer sequence is not self-supporting. The remainder of the highly thinned growth substrate is in particular unsuitable as such for the function of a growth substrate; and
• - The semiconductor layer sequence contains at least one semiconductor layer having at least one surface having a mixing structure, which leads in the ideal case to an approximately ergodic distribution of the light in the Halbleiterschich tenfolge, that is, it has a possible ergodisch stochastic scattering behavior.

A basic principle of a thin-film light-emitting diode chip is, for example, in the document I. Schnitzer et al., Appl. Phys. Lett. 63 (16) 18 October 1993, pages 2174-2176 described, the disclosure of which is hereby incorporated by reference. Examples of thin-film light-emitting diode chips are in the documents EP 0905797 A2 and WO 02/13281 A1 described, whose disclosure content is hereby also included by reference.

One Thin-film LED chip is in good approximation a Lambert surface radiator and is suitable from therefore, for example, good for use in a headlamp, such as a motor vehicle headlight.

In one development, the optoelectronic semiconductor body comprises in its first sub-segment a first sub-layer and a second sub-layer separated by the active layer. The at least one second sub-segment also has a first sub-layer and a second sub-layer separated by the active layer. The third line level is now designed such that it connects the first sub-layer of the first sub-segment and the second sub-layer of the second sub-segment with each other electrically conductive. Consequently For example, an n-doped sub-layer of the first sub-segment is electrically conductively connected by means of the third line level with a p-doped sub-layer of the second sub-segment. As a result, a series circuit is formed from the two active partial layers.

To For this purpose, at least one of the sub-segments can make a breakthrough which passes through the active layer of the subsegment and the first main side facing sub-layer of the subsegment contacted. This breakthrough can be cylindrical, round, but also be trench-shaped or any have geometric shape. By using multiple breakthroughs within the subsegment may have a better lateral current distribution in the first main side facing sub-layer of the subsegment be achieved. As a result, the radiation characteristics and the Luminous efficiency further improved.

In In another embodiment, the optoelectronic Semiconductor body on a trench, with an insulating Material can be filled. The ditch can essentially run perpendicular to the active layer of the respective sub-segments and the first sub-segment of the at least one second sub-segment separate. The width of the trenches can be in the range of a few Micrometers lie. Preferably, the trench penetrates at least the area of the active layer of the respective subsegments, in the recombination of the charge carriers and thus the Generation of electromagnetic radiation take place.

alternative The ditch can be perpendicular through a large area of Semiconductor layer sequence run and thus the semiconductor layer sequence also subdivided into the respective subsegments. In this embodiment are leakage currents between the individual sub-segments reduced. In addition, the trench can also vertically through at least go one of the respective management levels and cut them.

advantageously, is the light-emitting first main side of the semiconductor layer sequence and the electronic semiconductor body free of electrical Contact surfaces. This will cause a shadowing or Absorption of a portion of the active sublayer during operation emitted electromagnetic radiation through the contact points reduced.

In In another embodiment of the invention, contact pads are adjacent the first main side of the semiconductor body next to the radiation-emitting Area executed. Included in this design the optoelectronic semiconductor body one of the at least two sub-segments electrically isolated outdoor area, the adjacent to at least one of the at least two sub-segments is arranged. On a side facing the first main page this outdoor area has a contact pad from the first, second and third contact. The contact pad is with the respective Wiring level electrically connected.

In In another embodiment, at least one line level with a conductive mirror layer be designed so that of the active layer emitted electromagnetic radiation in the direction of second main side towards the first main page reflected becomes. As a result, the emission characteristic is further improved.

In Another development is between the semiconductor layer sequence and the individual management levels and the corresponding contacts the line levels to the semiconductor layer sequence at least in places arranged a mirror layer. This can be semiconductive as well be electrically insulating. In the latter case, it can be a majority have openings through which the line levels the semiconductor layer sequence in the respective sub-segments electrically to contact. The mirror layer can also be used as lateral power distribution layer serve to a current injection to improve in the semiconductor layer sequence. For example, can a current spreading layer for this purpose comprise a conductive oxide. In addition, it can be formed as a mirror layer, for example with silver his and thus next to a low lateral resistance also good Have reflective properties.

In a development is the active layer of the semiconductor layer sequence by several stacked active sublayers educated. For example, the active layer may have a double heterostructure or a multiple quantum well. Furthermore it is possible in each subregion of the semiconductor layer sequence to provide different active layers. these can be doped differently, but also different materials so that upon recombination of charge carriers electromagnetic radiation of different wavelengths is emitted.

To improve the emission, the first main side of the semiconductor layer sequence can be structured. It is also possible to apply on the first main page an additional conversion material to to transform the emitted electromagnetic radiation into a second radiation of different wavelengths. This makes it possible to realize different color impressions and also to produce mixed colors. In a correspondingly suitable conversion material and certain material systems for the active layer of the two subsegments of the semiconductor layer sequence can thereby be generated white light, for example, for headlights or projection systems.

The individual sub-segments of the semiconductor layer sequence can be arranged flat next to each other. For example they can be square in the form of an xx matrix be arranged, where x is a natural number> 2. alternative They can also form a rectangular structure be used, for example in the form of an x x y matrix. In both cases, the matrix thus becomes the subsegments as a semiconductor body on a common carrier manufactured.

The Control by the contact level with the different line levels on the side facing away from the first main side of the semiconductor layer sequence is not limited to two subsegments. By appropriate additional line levels can have multiple sub-segments be connected together to form a series circuit. By additional contact elements, which the individual Contacting line levels is a selective control of individual ones Subsegments of the semiconductor layer sequence possible. A Interconnection can be done externally by a microprocessor or another integrated circuit done. This can also be the needed Include driver stages.

One Another aspect of the invention relates to a process for the preparation an optoelectronic semiconductor body. In this an epitaxial growth of a semiconductor layer sequence takes place on a growth substrate, wherein the semiconductor layer sequence a suitable for the generation of electromagnetic radiation active Layer has. Furthermore, a first subsegment and at least a second electrically isolated portion of the semiconductor layers thereof follow defined, resulting in an emission of electromagnetic radiation in Direction to a first main page are provided.

It becomes a first line level adjacent to one of the first main page opposite side of the semiconductor layer sequence formed in such a way that it contacts the active layer of the first subsegment. A second line level becomes adjacent to that of the first main page opposite side of the semiconductor layer sequence is formed and contacted the active layer of the at least one second subsegment.

After all becomes at least a third line level at the first main page opposite side of the semiconductor layer sequence executed. This contacts the active layer of the first subsegment and the active layer of the at least one second subsegment. Further the third conduit level couples the active layers of the at least two sub-segments forming a series circuit with each other.

Of further comprises the inventive method forming a first contact pad connected to the first conductive plane forming a second contact point with the second line level is connected, as well as forming at least a third contact point with the at least one third Management level is connected.

at the proposed method is a semiconductor body formed, the two sub-segments each have an active layer for Generation and emission of electromagnetic radiation. By on the opposite side of the first main page the semiconductor layer sequence arrange th line levels, which summarized form a contact level is a single control reaches the active layer of the respective sub-segments. The additional third management level with the connection to both the third contact point and to the active layers of the two subsegments of the semiconductor layer sequence a selective activation of a subsegment as well as a common control of both sub-segments by those with the third Line level formed series connection of the two sub-segments.

In An embodiment of the invention is in addition to the semiconductor layer sequence In addition, a mirror layer on one of the first main page grown on the opposite side of the semiconductor layer sequence. This mirror layer can be formed by an electrically insulating material. Alternatively, a conductive material is possible, wherein between the mirror layer and the semiconductor layer sequence a additional insulating intermediate layer for electrical Decoupling may be present. In an alternative embodiment at least one of the three levels of conduction with a corresponding one Mirror layer formed. For example, the line levels be formed by a highly reflective metal.

In one embodiment of the method according to the invention, a mirror layer is added or applied in the form of the line levels on the side facing away from the first main side of the semiconductor layer sequence, so that at least 50% of the surface of the semiconductor layer sequence is mirrored on the side facing away from the first main page. The reflectivity of such a mirror layer may be over 50%, and more preferably between 50 and 99.9%.

The epitaxial growth occurs after providing a growth substrate by growing a first sub-layer having a first doping type and then growing a second sub-layer with a second doping type on the first sub-layer. By the different doping types is between the first and the second Partial layer formed the active layer, which is a so-called represents pn junction. In this case, the first partial layer, that is, the sub-layer adjacent to the first main side has an n-doped one Be partial layer. The second sub-layer facing away from the first main page is accordingly p-doped.

additionally can on the sublayers current spreading layers be formed, which has a particularly low lateral surface resistance exhibit. Appropriately, contact the Conduction levels the current spreading layers. For example, can after growing a second sub-layer on the first sub-layer formed on the second sublayer, a current spreading layer be, by at least the at least one third management level will be contacted. In an embodiment of the invention The process can add the current spreading layer in addition be formed with a mirrored layer.

First, second and third line levels are through appropriate isolation layers separated from each other. In one embodiment the process of growing line levels and subsequent Structuring the same. Subsequently, insulating Materials applied on the structured management level. As well may also be an insulating material on the semiconductor layer sequence grown up and then the insulating material be structured.

For forming at least one of the first, second and at least A third management level is used in a further development of the proposed Process breakthroughs through the active layer in at least one of the at least two sub-segments formed. The side walls of the opening are provided with an insulating material, to avoid a short circuit. This can be done, for example Depositing an insulating material on the sidewalls the breakthrough take place. Alternatively, the side walls of the breakthrough also be oxidized to an insulating layer to build. Subsequently, the breakthrough with a conductive Material filled, which is the at least one of the line levels contacted. In this way, through the line levels sublayers contacted, that of the first main side of the semiconductor layer sequence are facing.

In a further training is the production of the first, second and third contact point simultaneously with the formation of the the contact points associated management levels. In other words Thus, a subregion of the semiconductor body is defined, and trained on this the management level. This subarea later forms the appropriate contact point and is with directly connected to the management level.

to Another embodiment of the method is after the epitaxial Growing on the growth substrate, especially after production the contacting plane with the individual NEN line levels the growth substrate decreased. Subsequently, the layer sequence thus produced applied to a carrier substrate. This is done in such a way the carrier substrate is adjacent to the third line plane. The removal of the growth substrate can by appropriate "breaking off" means done by a laser.

In a development of the method are then the previously defined Sub-segments by a selective separation process from each other electrically isolated. For example, the separation process with a chemical etching process be carried out in the ditch along the dividing line the respective previously defined subsegments are etched. This trench reaches through the layer sequence up to the contact plane. The trench can be filled with an electrically insulating material be, but also be exposed. The following is the invention based on various embodiments and embodiments explained in detail with reference to the drawing. Show it:

1 FIG. 2 a schematic plan view of a first embodiment of an optoelectronic semiconductor body according to the proposed principle, FIG.

2A a schematic cross-sectional view of the embodiment according to 1 along the I-I 'plane

2 B a schematic cross-sectional view of the embodiment according to 1 along the II-II'-level,

3 a cross-sectional view of a second embodiment with rear-side contacts,

4A . 4B schematic sectional views according to a third embodiment,

4C . 4D Equivalent circuit diagram of the embodiments in the 4A . 4B .

4E . 4F Plan views of an optoelectronic semiconductor body divided into several sub-segments corresponding to the sectional views and the equivalent circuits of 4A to 4D .

5 an embodiment of optoelectronic semiconductor bodies in a light application,

6 a cross-sectional view of a fourth embodiment,

7A to 7J schematic plan views of the first embodiment of the optoelectronic semiconductor body in different stages of the manufacturing process.

In The different embodiments are the size ratios the elements shown in principle not to scale consider. Rather, individual elements can be layers for better understanding and / or for better presentation exaggerated be shown large or thick. Impact or functionally identical components carry the same within the figures Reference numerals.

5 shows an embodiment of an optoelectronic semiconductor body with individual sub-segments angeord net in a 2 x matrix in an application as a headlight. Shown are 2 x 4 complete segments, with the arrangement continuing to the right. In the embodiment, various sub-segments 901 . 902 provided substantially square. These emit in an operation of the circuit each electromagnetic radiation of a wavelength. By controlling the individual subsegments 901 . 902 the beam intensity of the light system can be selectively controlled.

For contacting contains each subsegment 901 and 902 a corner-shaped outdoor area 930 which is provided with a contact pad. The contact pad is over a bonding wire 920 respectively 925 to a contact panel in an outdoor area 910 guided. The bonding wires 920 and 925 connect the respective contact panel via the contact pad with the n-doped layer of the respective subsegment 901 . 902 , For contacting the p-doped sublayers of the two subsegments 901 . 902 are two more contact panels 926 . 927 outside 910 intended.

Through the contact points 930 in the respective corners of the subsegments 901 respectively 902 In one operation of the arrangement, shading is generated in these locations. This results in a non-uniform Lichtabstrahlcharakteristik the individual sub-segments, which is still clearly visible even with strong luminosity. The shading effect is more pronounced when the bonding wires 920 not, as shown here, are guided in the isolated areas between two sub-segments along, but the segments overlap. At the same time, in the illustrated embodiment, the light efficiency and yield are reduced by the relatively large intermediate regions or the space required for the implementation is increased.

1 on the other hand shows a schematic plan view of an embodiment according to the proposed principle. In the exemplary embodiment, an optoelectronic semiconductor body with four light-emitting sub-segments 10 to 13 in the form of a 2 × 2 matrix. The individual subsegments are electrically by insulating trenches 20 . 20 ' from each other as well as from an outdoor area 15 separated. The insulation 20 . 20 ' can be compared to the embodiment according to 5 have a significantly smaller thickness, since it only for electrical insulation of the sub-segments 10 to 13 serves. However, contact elements or bonding wires are no longer guided over it.

In the outdoor area 15 are a total of 5 contact pads 40 to 44 arranged. These are, as in Wei explained further, with individual line levels below the active layer of the individual sub-segments 10 to 13 connected and contact these. The line levels in turn provide the electrical contact with the respective p- and n-layers of the semiconductor layer sequence of the individual sub-segments 10 to 13 ago. In summary, they form a contact plane which faces away from the main light-emitting side.

The semiconductor layer sequence in the individual subsegments 10 to 13 Based on a semiconductor material system, which can be doped differently depending on the application. For example, so-called III / V compound semiconductors or also II / VI compound semiconductors can be used. The semiconductor layer sequence 2 may be present in the thickness between 5 microns and 7 microns.

One III / V compound semiconductor material has at least one element from the third main group, such as Al, Ga, In, and an element of the V main group, such as B, N, P, As, on. In particular, the term "III / V compound semiconductor material" includes the Group of binary, ternary or quaternary Compounds containing at least one element from the third main group and at least one element of the fifth main group contain, in particular nitride and phosphide compound semiconductor. Such a binary, ternary or quaternary For example, compound may also include one or more dopants as well have additional ingredients. To the III / V compound semiconductor materials include, for example, nitride III compound semiconductor material and phosphide III compound semiconductor materials, such as GaN, GaAs, and InGaAlP. Likewise the material system AlGaN / GaN becomes the above counted compound semiconductors.

Corresponding For example, an II / VI compound semiconductor material has at least one element from the second main group, such as Be, Mg, Ca, Sr, and an element of the sixth main group, such as O, S, Se, up. In particular, an II / VI compound semiconductor material comprises a binary, ternary or quaternary Compound comprising at least one element from the second main group and at least one element of the sixth main group. Such a binary, ternary or quaternary In addition, compound can, for example, one or more dopants and have additional constituents. To the II / VI compound semiconductor materials For example, ZnO, ZnMgO, CdS, CnCdS, MgBeO.

Dependent of the desired wavelength or the desired Wavelength spectrum can be one or more the above compounds as a material system for an opto-electronic device can be provided.

For contacting is the first contact pad 40 via a below and here indicated by the connection V line level with the main side of the sub-segment 11 connected facing layer. This is due to the connection V of the contact pad 40 to the feedthrough hole D shown schematically. The contact pad 40 thus contacted via the line level, the n-doped sub-layer of the layer sequence of the subsegment 11 , Accordingly, the contact pad 41 via a further line level here schematically through the connection V 'with the p-doped sub-layer of the active layer sequence of the subsegment 11 electrically connected. Furthermore, this line level is also provided, via further openings D ', the n-doped sub-layer of the active layer sequence of the second sub-segment 10 to contact.

This is indicated schematically by the connection V ', which indicates the p-doped region of the active layer sequence of the first subsegment 11 via openings D 'with the n-doped region of the layer sequence of the second subsegment 10 contacted. This also creates an electrical connection between the contact surface 41 via the management level below the subarea 11 through to the n-doped sub-layer of the active layer sequence of the second sub-segment 10 contacted.

Finally, a further third line level V "is provided, which is isolated from the other line levels of the contacting plane and below the active layer sequence of the subsegment 11 runs. It connects the p-doped sub-layer of the active layer sequence of the sub-segment 10 with the contact pad 42 , Thus, also for the second subarea 10 given a contact of the two sub-layers, namely on the one hand on the line level V 'with the contact pad 41 and via a further line level V '' with the contact pad 42 ,

The contact pad 42 also has openings with the n-doped sub-layer of the active layer sequence of the subsegment 13 connected. In other words, the line level V "contacts the p-type sub-layer of the sub-segment 10 and the n-doped sub-layer of the subsegment 13 of the optoelectronic component. The contact pad 43 is shown via a line level through the connection V ^IV with the p-doped sub-layer of the subsegment 13 electrically connected. At the same time she stands over this line level in contact with openings D '' in the sub-area 12 of the optoelectronic component. The openings D 'connect the n-doped sub-layer of the active layer sequence of the sub-segment 12 on the one hand with the contact surface 43 and on the other hand via the line level with the p-doped sub-layer of the active layer sequence of the sub-segment 13 , A last line level schematically represented by the connection V ^III connects the fifth contact surface 44 with the p-doped sub-layer of the active layer sequence of the subsegment 12 , In the present embodiment, the line levels of the contact planes are arranged overlapping. Depending on the application, they can also run side by side.

The arrangements of the line levels with each other and the individual contact surfaces and their connection to the respective line levels is a selective control of each individual sub-segment 10 to 13 the optoelectronic semiconductor component 1 possible. Likewise, two subsegments can be combined to form a series circuit. Likewise, all four sub-segments can be used to form a series connection during operation. The following table illustrates the interconnection during operation of the optoelectronic semiconductor body according to the desired operating mode. To be operated segments Contacts to be connected 10 41 with n, 42 with p 11 40 with n, 41 with p 12 43 with n, 44 with p 13 42 with n, 43 with p 10 and 11 40 with n, 42 with p 12 and 13 42 with n, 44 with p 10 to 13 40 with n, 44 with p

In the table, "n" or "p" indicates the respective type of charge carrier supplied to the contact pad. The pn junction in the active layer of the subsegments is switched in the flow direction during operation. It follows that the contact pad 40 , if ever, always with "n", the contact pad 44 always with "p" is applied. The other three contact pads 41 to 43 Depending on the desired operating mode, either a positive potential or a negative potential is applied and corresponding charge carriers are supplied.

For example, if in operation a radiation emission only of the subsegment 10 is to be done, is to the contact pad 41 a negative potential (corresponding to a supply of electrons) and to the contact pad 42 a corresponding positive potential (corresponding to a supply of holes) is applied to switch the diode of the sub-segment in the flow direction. Via the line level, represented by the connection V ^I and those in the subarea 10 existing openings D 'the n-doped sub-layer and the p-doped sub-layer via the second line level V ^II, the corresponding charge carriers are supplied. Because at the same time the subarea 11 via the contact pad 41 is switched in the reverse direction, this emits no radiation. If, however, the subsegments 10 and 11 are selected for generating radiation, according to the table the contact pads 40 and 42 be supplied to the appropriate voltage.

By The wiring level proposed here can thus each subsegment individually, but also two segments in pairs be connected in series.

2A shows in this regard a cross-sectional view along the axis I-I '. The semiconductor layer sequence 25 of the optoelectronic semiconductor body is through a trench 20 into the two subsegments 10 respectively 11 divided. The semiconductor layer sequence 25 comprises a first n-doped sub-layer facing the emission surface 21 in subsegment 10 respectively 21 ' in the subsegment 11 , Another sub-layer 23 . 23 ' is p-doped and applied on the side facing away from the radiating surface. Due to the common arrangement of the n-doped and p-doped partial layers 21 . 21 ' and 23 . 23 ' forms in the subarea 10 a first pn junction 22 and in the subarea 11 a second pn junction 22 ' out. In this pn junction, the charge carrier recombination takes place with the emission of electromagnetic radiation. Through the dividing trench 20 passing through all sublayers of the layer sequence 25 goes through, is an electrical Isola tion of the two sub-segments 10 and 11 generated while avoiding leakage currents between the two sub-segments.

For contacting the n-doped partial layer 21 of the first subsegment 10 is a breakthrough 400 provided, whose side walls 403 insulated with an electrical material. As a result, during operation, a short circuit and a current flow in the p-doped layer 23 avoided. The breakthrough 400 ranges from the p-doped sublayer 23 through the pn junction 22 through, to the n-doped sublayer 21 , In addition, the breakthrough stands 400 in electrically conductive contact with a first line level 405 , This is from the p-doped sublayer 23 as well as from the other line levels through an insulation layer 505 respectively 506 separated. The management level 405 leads to the contact pad as shown 40 , in the present case, by a subsection of the management level 405 itself is formed. Thus contacted the contact pad 40 the n-doped sublayer 21 of the first subsegment 10 about the breakthrough 400 and the management level 405 ,

In the illustrated embodiment, a second line level 415 arranged below the first line level and extends from the contact pad, not shown here 41 on the one hand to a contact 410 the p-doped layer 23 and also to further breakthroughs 412 , This is part of the second subsegment 11 and contacts the n-doped sub-layer 21 ' the sequence of layers 25 of the second subsegment 11 , Again, the side walls are over an additional insulating layer 413 from the active layer 22 ' or the p-doped sublayer 23 ' separated. Below the second management level 415 and for separation from the third management level 425 is an insulation layer 501 intended. In addition, the isolation separates 502 this line also from the p-doped sublayer 23 ' of the second subsegment 11 ,

A third management level 425 finally connects the third contact 42 according to the plan view of 1 and the p-doped sub-layer of the subsegment 11 about the feeder 420 , The third line is on an insulating substrate 32 upset and from isolation 503 and 501 surround.

For the operation of the arrangement of the individual subsegments 10 respectively 11 the current flow is explained below. Switched in the flow direction when operating only the subsegment 10 become the contact pad 40 and thus the first management level 405 as well as the second management level 415 subjected to an appropriate potential. The current then flows over the n-doped sublayer 22 in the p-doped sublayer 23 , wherein the supplied charge carriers in the pn junction 22 of the first sub-segment recombine and emit electromagnetic radiation.

For operation of only the second subsegment 11 becomes the pn junction present there 22 ' switched in the direction of flow. This is done by supplying corresponding charge carriers in the second line level 415 or the third management level 425 via the corresponding contact pads. In this mode, the pn junction 22 of the first subsegment 10 switched in the reverse direction and thus suppresses a charge carrier recombination in this subregion. In a simultaneous operation of both sub-segments are to the first line level 405 via the contact pad 40 as well as to the third management level 425 via the contact pad, not shown here 42 applied a voltage such that the two pn junctions 22 and 22 ' the two sub-segments are switched in the flow direction. A current flow then takes place via the first line level 405 and the breakthrough 400 in the first pn junction 22 , from there via the feeder 410 and the second management level 415 in the second breakthrough 412 of the second subsegment 11 , The pn junctions of both subsegments are then switched in the flow direction.

In 2 B is a cross-sectional view along the axis II-II 'according to the embodiment according to 1 shown. The two subsegments 10 and 12 are in turn through an insulating trench 20 ' separated, whereby a flow of current is avoided. In addition, the filled with an insulating material trench ranges 20 ' into the additional insulation layer 502 that separates the individual management levels. The subsegments 10 and 12 are thus formed by an insulating layer of the trench 20 ' and the insulating side areas 30 surround.

In the 2 B are only the second line level in the sectional view 415 and the third management level 425 shown. The first management level 405 as shown in the cross-sectional view 2A to recognize is in the sectional view to 2 B not available, because the management level 405 the segments 10 and 12 not contacted directly. The n-doped sublayer 21 ' of the area 10 respectively 21 '' of the subsegment 12 takes place through several breakthroughs 412 respectively 412 '' for both subsegments. They are each formed by trenches, on the side walls of an insulation material 413 is deposited. This prevents a short circuit and an electrical contact with the p-doped partial layers 23 ' of the subsegment 10 relationship 23 '' of the subsegment 12 , At the contact level 25 ' , in which the line levels run, the openings are to a common line level 415 and 415 '' merged. The p-doped sublayer 23 of the subsegment 10 is through the feeders 420 to the third management level 425 connected. Correspondingly contact the bushings 420 '' the sub-layer 23 '' of the subsegment 12 with the third management level 425 '' , According to the embodiment according to 1 is the third management level 425 '' of the subsegment 12 to the contact pad 44 and the second management level 415 '' of the subsegment 12 to the contact pad 43 guided.

3 shows a cross-sectional view of another embodiment. In this all contact elements are also arranged on the back. The semiconductor layer sequence 320 again contains a first n-doped layer 321 to which a p-doped layer adjoins 323 is applied. As shown, a pn junction forms at the interface 322 out.

For example, InGaN / GaN whose emission spectrum is in the range of the visible blue light can be used as the material system of the layer sequence. Due to the provided applied structuring 325 a radiation characteristic of the optoelectronic semiconductor body is improved. In addition, a conversion agent can also be provided and on the surface of the structuring 325 be applied. As a result, a part of the emitted blue light is converted to light of another wavelength, whereby the generation of white light can be realized.

On the structuring 325 opposite side of the second layer 323 the semiconductor layer sequence 320 is a conductive de reflective connector layer 330 arranged. This also serves as a lateral current spreading layer for coupling in charge carriers. The layer 330 is through several supply elements 350 contacted, in turn, with a breakthrough 351 to a rear contact pad 390 are connected.

Furthermore, there is a breakthrough 346 provided with an electrically conductive material 361 is filled. The breakthrough 346 extends from the back of the semiconductor body through all layers to the layer 321 the semiconductor layer sequence 320 , Its sidewalls are essentially made with an insulating material 364 almost completely surrounded to a short circuit, for example, with the terminal layer 330 , to avoid. Furthermore, the contact 361 with a contact pad 391 on the back of the optoelectronic semiconductor body and with a conductive material layer 350 ' connected. The material layer 350 ' contacts the connection layer 330 ' of the left subsegment of the semiconductor body. The same is from the right sub-segment through an insulating trench 342 completely electrically isolated. The ditch 342 is filled with an insulating material, which also the spaces between the individual bushings 350 ' and 350 fills. This insulating material can simultaneously serve as a carrier substrate for the replacement carrier 380 be used.

The conductive layer 350 ' forms together with the shift 330 ' a first connection layer of the left subsegment of the optoelectronic semiconductor body and contacts the layer 323 the semiconductor layer sequence 320 , Accordingly, a trench is also in the left part of the Halbeiterkörpers 361 ' formed, whose side walls 346a are provided with an iso lierenden material. The material of the trench 361 ' contacts the contact pad located on the back surface 390 ' ,

Externally are the contact pads 390 ' such as 391 coupled on the back with a switch S1, which leads to a first terminal A1. The contact 390 is coupled to a second terminal A2. In an operation of the arrangement, depending on the switch position S1, only the right-hand part of the optoelectronic component or both parts of the optoelectronic component will be supplied with current. In the illustrated switch position, a current flows through the contact during operation of the semiconductor device 390 and the feeder 350 in the semiconductor layer sequence of the right region of the semiconductor body. In the local pn junction, the charge carriers recombine and emit light. During operation, the left part of the semiconductor body is turned off in the illustrated switch position.

Now the connection A1 with the contact pad 390 ' coupled via the switch S1, the current flows through the trench 361 ' in the right part of the semiconductor body in the first connection layer of the layers 350 ' and 330 ' in the left part of the semiconductor body. As a result, the two semiconductor layer sequence and their pn junctions contained therein are connected in series.

Dependent from the design of the individual connection layers and their Contacting in the respective sub-segments can be such an external parallel or series connection of the individual subsegments of a reach optoelectronic semiconductor body.

The connection can be made externally via an integrated circuit. This controls the switch and also includes various driver stages to provide the individual segments but also the segments in series with the sufficient voltage and current. It should be noted that in a series connection, the total voltage across the segments voltage is correspondingly larger, while the current flowing therethrough remains substantially the same. In this respect, therefore, a voltage-driven driver stage is required. Likewise, the current through the individual sub-segments can be varied in order to achieve different light output.

6 shows a cross-sectional view of another embodiment of a semiconductor body with a structured layer sequence 600 that at a contact level 601 is arranged.

The layer sequence 600 is on its first main page with a structuring 605 provided and over a ditch 606 and an insulating material which cuts through the layer sequence 630 divided into two subsegments. Each sub-segment thus comprises a layer sequence of an n-doped first sub-layer 610 and a second p-doped sub-layer arranged thereunder 620 , Due to the different doping, a pn junction is formed 615 which is the active layer for generating and emitting electromagnetic radiation.

Below is the contact level 601 , which in turn has different levels of management. These contact the individual partial layers 610 respectively 620 the two subsegments. As shown, contact pads are located both on the right and on the left side of the semiconductor layer sequence 600 arranged. In detail is a first contact 661 formed on the main side of the facing side adjacent to the first portion of the layer sequence. This contact pad 661 , which forms the p-contact of the arrangement in one operation, is in electrically conductive connection to the first line level 660 ,

The management level 660 contacts the p-doped sub-layer 620 of the first subsegment 691 the sequence of layers. This is done via a below the p-doped sub-layer 620 arranged electrically conductive mirror layer 662 , The mirror layer 662 below the p-doped sublayer 620 is electrically conductive from the corresponding mirror layer 662 of the second subsegment 692 through the insulation material 630 separated. The mirror layer 662 reflects one in the pn junction 615 generated light in the direction of the first main page and thus for structuring 605 out.

Another conductive contact pad 671 on top of the semiconductor body is over the insulation material 630 from the first contact 661 separated and with the second line level 670 connected. The material of the second contact 671 can be the same material as the management level 670 include. The management level 670 contacts the n-doped sub-layer 610 of the first subsegment 691 over a number of breakthroughs 640 , These breakthroughs reach through the first management level 660 from the second management level 670 separating insulation layer 630 , the management level 660 , the mirror layer 662 , the p-doped sublayer 620 and the pn junction in the sublayer 610 of the first subsegment 691 , They are filled with an electrically conductive material and the outer walls 642 isolated accordingly. This will cause a short circuit between the second line level and the first line level 660 or the mirror layer or the p-doped partial layer 620 avoided.

Furthermore, the second line of management contacts 670 over the mirror layer 662 also the p-doped sublayer 620 of the second subsegment 692 , As a result, the n-doped sub-layer stands 610 of the first subsegment 691 in electrical contact with the p-doped sublayer 620 of the second subsegment 692 , The pn junctions 615 both subsegments 691 and 692 thus form a series connection.

Finally, it is adjacent to the second subarea 692 a third contact 651 intended. This contacted via the third management level 650 and ditches 645 the n-doped sublayer 610 of the second subsegment 692 , Here, too, the breakthroughs are sufficient 645 through the second management level 670 , the mirror layer 662 , the p-doped sublayer 620 and the pn junction 615 into the n-doped sublayer 610 of the second subsegment. Insulating sidewalls 642 prevent a short circuit between the third line of management 650 and the second management level 670 or the mirror layer 662 , Finally, the third management level 651 through an insulation layer 630 from a carrier substrate 680 separated.

In one operation of the arrangement is the contact 671 , connected to the second management level 670 executed as a switchable contact. This means that depending on the desired operating mode either positive or negative charge carriers are supplied. Accordingly, it switches depending on whether the first sub-segment or the second sub-segment to be controlled, the corresponding pn junction in the flow or in the reverse direction. For example, if only the first subsegment 691 is operated, the contact pad 661 used as a p-contact, the switchable contact 671 as n contact.

In an operation of only the second subsegment 692 becomes the third contact pad 651 as n contact operated, the switchable contact 671 as a p-contact. In this mode then the pn-transition 615 of the first subsegment 691 switched in the reverse direction. When operating both sub-segments in the form of a series connection, the contact pads 661 respectively 651 used as p- or n-contact. The switchable contact 671 is not connected in this case of operation.

The 7A to 7I show plan views of a semiconductor body in various stages of its manufacture. On the basis of these views, the production process, in particular the contact plane with the different line levels and the insulating materials arranged therebetween, will be explained.

In 71A is the top view on the semiconductor body 700 represented here in four subsegments 701 to 704 is divided. Between each sub-segment, a trench is defined, in order later in the process steps, the semiconductor layer sequence of each sub-segment 701 to 704 electrically isolate each other. Furthermore, the holes provided for the n-doped sublayer become 701 ' defined in each subsegment.

Subsequently, according to 7B the p-doped sub-layer on the semiconductor body and the sub-segments 701 to 704 applied, wherein in the areas of the later openings to the n-doped sub-layer recesses 704 '' are provided. Furthermore, there is an outdoor area 746 provided on which the later contact pads are arranged.

Between the first subsegment 701 and the fourth subsegment 704 is another subsection 711 ' adjacent to the first subsegment 701 intended. The same applies to the subareas 713 ' between the second subsegment 702 and the third subsegment 703 and one to the subsegment 704 adjacent subarea 714 ' between the subsegment 704 and the subsegment 703 ,

On the p-doped sub-layer is according to 7C now a management level in each subsegment 701 to 704 deposited. This serves for the p-contact reinforcement and simultaneously couples some of the later connection pads to the corresponding segments as shown.

In detail, an outer area of the contact reinforcement forms a first contact panel 741 , which via the corresponding line level with the p-doped sub-layer of the first portion 701 connected is. As can be seen, is also between the subareas 701 and 704 the semiconductor body adjacent subarea 711 ' covered by the management level. The management level above the subsegment 701 is thus no longer rectangular in the area of the segment 701 trained, but covers the first sub-segment 701 and the additional adjacent subarea 711 ,

Correspondingly, the fourth subsegment is also used 704 a management level deposited, which is the additional adjacent outdoor area 714 ' overlaps. Accordingly, in this area, an additional sub-area 714 educated. The same applies to the additionally defined Teilbe rich 713 which is at the line level above the p-doped sublayer of the segment 703 lies.

Finally, a last p-contact gain and line level is above the sub-segment 702 arranged. This contact reinforcement 702 ' is also in electrically conductive contact with the contact panel 744 which thereby forms the p-doped sublayer of the segment 702 contacted. Furthermore, there are three additional contact areas 740 . 742 and 743 defined and provided with a metallization. Between the individual contact areas 740 to 743 are insulating intermediate areas arranged. Furthermore, each p-contact reinforcing line plane contained recesses in the individual segments 704a in the area of later breakthroughs.

Subsequently is an insulation layer on the layer sequence and the first Applied line levels of the individual segments.

7D shows the next step, in which the insulating material is opened in the area of the openings. The resulting breakthroughs 704b allow the subsequent contacting of the n-doped sub-layer of the respective segments. Furthermore, the subregions are opened above the previously defined contact areas and the underlying metallization to form the contact areas 740b and 743b exposed. Likewise, a narrow degree 711b . 714b and 713b etched from the insulating material and the underlying subareas 711 . 714 and 713 exposed.

In 7E Finally, the semiconductor body is shown after the application of the second line level. This can be done by depositing a metallization on the layer sequence and subsequent structuring. It will be so on every subsegment 701 to 704 a corresponding conductive layer 731 . 732 . 733 and 734 applied. In detail, the management level 731 of the first subsegment 701 also in the area 740a led out so that they contact metallization in the underlying area 740b contacted. Furthermore, the management level 734 over the fourth subsegment 704 in a subarea 724 over the subsegment 704 grown out so that they the underlying and illustrated in the previous figure breakthrough 711b overlaps and thus those in the trench 711b exposed p-contacting layer contacted.

In the same way is also the management level 733 over the third subsegment 703 in a subarea 723 over the ditch below 714b grew up. Accordingly, the management level overlaps 732 above the subsegment 702 the break through 713b in the subarea 722 and also contacted in the area 743a the underlying contact metallization 743b ,

Thus, the n-contact wiring is defined and led out simultaneously to the corresponding contact pads. In other words, the management level contacts 732 on the one hand the n-doped sub-layer of the sub-segment 702 and at the same time over the ditch 713b the p-doped sub-layer of the sub-segment 703 , Accordingly contacted the management level 733 of the subsegment 703 the n-doped sub-layer of the sub-segment 703 through the openings shown in the preceding figures and also over the trench 714b the p-doped sub-layer of the sub-segment 704 , The management level 734 of the subsegment 704 contacts the n-doped sublayer of the segment 704 over the corresponding breakthroughs and over the ditch 711b the p-doped sub-layer of the sub-segment 701 ,

In 7F eventually becomes the central contact pad 742a as well as the separate third management level 743 Are defined. For this purpose, reference is made to the line levels produced in the preceding process steps 731 to 734 the subsegments 701 to 704 an isolation layer grew up. Advantageously, the insulating layer is grown on the entire surface of the semiconductor body to compensate for any existing stages. In the grown insulation layer is in the range 742a the central contact pad and in the area 743 defines a breakthrough. Subsequently, the insulation material is removed in these areas, so on the one hand in the area 742a the underlying metallization layer of the contact pad 742 is exposed. In the area 743 a breakthrough is formed by the insulating layer, the underlying line level 733 of the third segment 703 exposes.

According to 7G is now on the isolation layer over another line level 753 the contact area 742c with the second management level 733 of the third subsegment 703 about the breakthrough 743 contacted. As shown here, the third level of management 753 applied flat as metallization. This is particularly useful when steps due to the different wiring layers during growing up should be avoided. Alternatively, the third management level 753 also be designed as a simple supply line.

Subsequently, the layer sequence of the semiconductor body and the third conduction plane is covered in a planar manner by an insulating layer in order to form a uniform back surface and to compensate any steps that may be present. Then according to 7H the existing growth substrate removed by a so-called laser lift-off process. This is done by irradiation of a laser, in which the growth substrate is removed from the previously produced layer sequence. The layer sequence is now applied with its back on a carrier substrate, so that in the 7G formed line level is adjacent to the carrier substrate. Also, a wet chemical method of removing the growth substrate may be used.

7H now shows the top view of the first main page of the grown layer sequence, in the later operation, the emission of electromagnetic radiation is to take place. In a further step, the in 7A etched intermediate areas etched as a trench, so that the individual sub-segments 701 to 704 of the semiconductor body 705 be isolated electrically from each other. The trench depth thus goes at least through the two n- and p-doped sublayers as well as the active layer of the layer sequence. By contrast, the contact plane with the individual conductor tracks is not severed by the trench, since otherwise the series connection of the individual segments produced in the preceding process steps is interrupted.

In the last process step according to 7I now be the contact pads from the front 740 to 744 of the semiconductor body 705 exposed.

The 7J finally shows a schematic representation of an overall view of the individual lithography steps. Clearly visible are the different levels of contacts, in particular the contact level of the central contact panel 742 which is the subsegment 703 with the contact panel 742 combines. Through the corresponding subregions of the segments 703 . 704 and 701 a series circuit is realized from all four segments, thereby implementing a voltage-driven light-emitting semiconductor device. The wiring on the opposite side of the emission prevents shading of the top and maximizes the light output. At the same time, individual sub-segments of the semiconductor body can be operated by the selective control.

The The embodiment shown here is not based on a 2 x 2 matrix limited. Rather, any number can be of individual sub-segments of a semiconductor body under Forming a series or parallel connection with each other combine. Different management levels in one of the emission side remote contact plane allows a suitable depending on the application Interconnection of the individual subsegments. The possibility, Coupling segments in series reduces the flow of current through the individual sub-segments of the semiconductor body, so simple Driver blocks can be used.

Depending on the desired interconnection, different embodiments can be realized in a matrix of individual sub-segments of an optoelectronic semiconductor body that generate electromagnetic radiation in operation. In this case, the individual subsegments can be manufactured as a common layer sequence. After production, they are separated by insulating trenches into subsegments. By applying on the main side remote contact plane with the individual line levels can be achieved any interconnection of the individual sub-segments. In this regard, the show 4A to 4F a schematic representation of another embodiment according to the proposed principle.

4A is a sectional view through an optoelectronic semiconductor body along in 4E shown direction. A contacting takes place in each case in the edge region by the contact elements 40 respectively 411 , The contact element 40 is with the breakthroughs 446 electrically connected, which is the sub-layer 21 the semiconductor layer sequence 20 to contact. Between the two differently doped sublayers 21 and 23 a pn junction forms 22 in which the charge carriers injected during operation recombine and emit electromagnetic radiation. On the shift 23 is also a lateral power distribution layer 462 arranged the same material as the contact layer 411 comprises the second subsegment of the semiconductor body.

A second connection layer 460 contacts the power distribution layer 462 of the right subsegment of the optoelectronic semiconductor body and forms the breakdown contact for the layer 21 ' the semiconductor layer sequence in the left sub-segment of the optoelectronic semiconductor body. Accordingly, the second connection layer 410 with the second layer 23 ' the semiconductor layer sequence 20 ' connected.

Between the left and the right sub-segment of the optoelectronic semiconductor body is as in the sectional figure 4A as well as in the plan view of 4E provided an insulating trench provided. As a result, the sub-segments are electrically separated from each other. In the equivalent circuit diagram according to 4C Thus, two diodes are connected in series. The diode effect results from the illustrated pn junction of the semiconductor layer sequence 20 respectively 20 ' ,

4B shows an alternative embodiment in which a plurality of pn junctions are provided instead of a simple pn junction. These transitions act like two diodes connected in series, as can be seen from the equivalent circuit diagram 4D results.

The representation of the section according to 4B takes place along the axes I as in 4F shown. In this exemplary embodiment, the optoelectronic semiconductor body is subdivided into four subsegments, each of which is a trench 442 are isolated isolating. The different connection layers 40 . 411 . 460 and 450 contact each of the semiconductor layer sequences of the various sub-segments and the pn junctions therein. The connection layers 40 . 411 . 450 to 470 are designed such that they correspond to the four subsegments as in the equivalent circuit diagram 4D explained interconnect.

As a result, in the case of the optoelectronic semiconductor body according to the proposed principle, a series connection of four diodes connected in series is realized. Consequently, during operation of the arrangement, a higher operating voltage becomes necessary. Due to the elegant combination of series circuits in the epitaxial layer, expensive driver stages and high-current sources can be used since the powers are now voltage-driven at low currents in the optoelectronic semiconductor body is fed. In addition, there is an optimized use of space by avoiding absorbing contacts, since all light-generating components Be energy-saving on a single semiconductor body can be realized. In addition, a series connection of chips can also be carried out with only one top contact and one conductive carrier.

QUOTES INCLUDE IN THE DESCRIPTION

This list The documents listed by the applicant have been automated generated and is solely for better information recorded by the reader. The list is not part of the German Patent or utility model application. The DPMA takes over no liability for any errors or omissions.

Cited patent literature

• WO 01/39282 [0007]
• US 5831277 [0007]
• US 6172382 [0007]
• US 5684309 [0007]
• - EP 0905797 A2 [0014]
• WO 02/13281 A1 [0014]

Cited non-patent literature

• I. Schnitzer et al., Appl. Phys. Lett. 63 (16) 18 October 1993, pages 2174-2176 [0014]

Claims (28)

Optoelectronic semiconductor body, full: A semiconductor layer sequence which is in at least two electrically isolated from each other sub-segments is divided and a first and a second main side, wherein the semiconductor layer sequence in each sub-area one for generating electromagnetic radiation suitable active layer; - and at the first main side of the semiconductor layer sequence to emission of in provided the active layer of generated electromagnetic radiation is; A first contact pad, a second contact pad and at least a third contact pad, - a first, the second main side adjacently arranged line level, which a first of the at least two sub-segments and the first contact pad electrically contacted, - a second, the second Main side adjacent arranged line level, which a second the at least two sub-segments and the second contact pad electrically contacted, - a third, the second main page adjacently arranged line level, which the first and the second sub-segment electrically to generate electromagnetic radiation with each other connects and electrically contacts the third contact pad. Optoelectronic semiconductor body according to Claim 1, wherein the first subsegment a first Partial layer and a separated by the active layer second sub-layer includes, in which the second of the at least two subsegments a first sub-layer and one separated by the active layer has second sub-layer and at which the third management level the first sub-layer of the first sub-segment and the second sub-layer of the second subsegment contacted. Optoelectronic semiconductor body according to Claim 2, wherein at least one of the sub-segments an opening which runs through the active layer of the subsegment and the first main side facing sub-layer of the subsegment contacted. Optoelectronic semiconductor body according to one of claims 1 to 3, comprising: - one Digging the first subsegment of the second of at least two sub-segments separates and substantially perpendicular to the active Layer runs. Optoelectronic semiconductor body according to one of claims 1 to 4, wherein at least one of the first, second and third management level and another of the first, second and third line of management overlap. Optoelectronic semiconductor body according to one of claims 1 to 5, wherein at least one contact pad of the first, second and third contact pads on the first main page remote side of the semiconductor layer sequence is arranged. Optoelectronic semiconductor body according to one of claims 1 to 6, further comprising - one from the at least two sub-segments electrically isolated outdoor area, the adjacent to at least one of the at least two sub-segments is arranged and on a side facing the first main page at least one contact pad of the first, second and third contact pads having. Optoelectronic semiconductor body according to Claim 7, wherein the first, second and third contact pad are arranged in the outdoor area. Optoelectronic semiconductor body according to one of claims 1 to 8, wherein at least one of the first, second and third line level includes a mirror layer, the an electromagnetic radiation generated in the active layer reflected towards the first main page. Optoelectronic semiconductor body according to one of claims 1 to 9, wherein between the layer sequence and at least one of the first, second and third management levels a mirror layer is arranged for reflection in the active one Layer generated electromagnetic radiation towards the first main page. Optoelectronic semiconductor body according to claim 10, wherein the mirror layer is electrically isolated from the active layer of the first and / or at least a second subsegment and of the little is at least one management level. Optoelectronic semiconductor body according to one of claims 10 to 11, wherein the mirror layer a Has more number of openings and at least one Lead level through the openings. Optoelectronic semiconductor body according to either of claims 9 or 12, wherein the mirror layer is 50% or more of the second main side of the semiconductor layer sequence covered. Optoelectronic semiconductor body according to one of claims 1 to 13, wherein the semiconductor layer sequence a current spreading layer adjacent to the second main side, in particular has a conductive oxide. Optoelectronic semiconductor body according to one of claims 1 to 14, wherein the active layer the semiconductor layer sequence several stacked one above the other includes active sublayers. Optoelectronic semiconductor body according to one of claims 1 to 15, wherein the first main side of the Layer sequence is structured. Process for producing an optoelectronic Semiconductor body comprising: - Epitaxial Growing a semiconductor layer sequence on a growth substrate, wherein the semiconductor layer sequence one for generating electromagnetic Having radiation suitable active layer; - Define a first subsegment and at least one of them electrically isolated second sub-segment of the semiconductor layer sequence, the to an emission of electromagnetic radiation in the direction of a first main page is provided; - Training a first line level facing away on one of the first main page Side of the semiconductor layer sequence and contacting the active Layer of the first subsegment; - Training one second line on the side facing away from the first main page the semiconductor layer sequence and contacting the active layer the at least one second subsegment; - Training at least a third line level at the first main page opposite side of the semiconductor layer sequence and contacting the active layer of the first subsegment and the active layer the at least one second sub-segment, wherein the third line level the active layers of the at least two sub-segments to form a series circuit coupled together; - Training a first contact pad connected to the first line level is; - Forming a second contact pad, with the second line level is connected; - Training at least one third contact pad, with the at least one third management level is connected. The method of claim 17, wherein an epitaxial Growing up includes: - Applying a mirror layer on a side facing away from the first main page of the semiconductor layer sequence. Method according to one of claims 17 to 18, in which epitaxial growth comprises: - Provide a growth substrate - epitaxial growth a first sub-layer having a first doping type; - epitaxial Growing a second sub-layer with a second doping type on the first sub-layer, so that between the first and the second sub-layer forms the active layer. The method of claim 19, further comprising: - one Applying a current spreading layer on the second sublayer, wherein at least the at least one third conduit level is the current spreading layer contacted. Method according to one of claims 17 to 20, wherein forming at least one of the first, second and at least a third level of conduction applying an insulating Materials and then structuring the applied comprising insulating material. Method according to one of claims 17 to 21, wherein forming at least one of the first, second and at least a third level of leadership growing up a senior Includes material on an insulating layer. Method according to one of Claims 17 to 22, in which the formation of at least one of the first, second and at least one third line level comprises: - forming a breakdown by the active layer in one of the at least two sub-segments; Forming an insulating material on sidewalls of the aperture; - Filling the aperture with a conductive material, which contacts the at least one of the line levels. Method according to one of claims 17 to 23, wherein forming one of the first second and third contact pads simultaneously with forming with the contact pad associated line level he follows. Method according to one of claims 17 to 24, further comprising: Removing the growth substrate, - Provide a carrier substrate - Applying the layer sequence on the carrier substrate such that the carrier substrate is adjacent to the third management level. Method according to one of claims 17 to 25, further comprising: - Structure of the first main page the semiconductor layer sequence to form a decoupling layer. Method according to one of claims 17 to 26, wherein defining comprises: - Forming a Trench through the semiconductor layer sequence for electrical isolation of the first subsegment of the at least one second subsegment. The method of claim 27, wherein the trench of etched on the first main side of the semiconductor layer sequence becomes.