DE102008038857A1 - lighting device - Google Patents

Abstract

A lighting device is provided, comprising a carrier (1) and a plurality of light modules (21, 22) each having a plurality of radiation-emitting semiconductor components (311, 312, 313, 314, 321, 322, 323, 324) in a plurality of rows ( 411, 412, 421, 422). Each of the plurality of rows (411, 412, 421, 422) comprises at least two of the radiation-emitting semiconductor components (311, 312, 313, 314, 321, 322, 323, 324). Each of the plurality of light modules (21, 22) is associated with a control device (51, 52) for controlling the brightness of the light module (21, 22). Each of the plurality of light modules (21, 22) is assigned a sensor unit (61, 62) for determining at least one measured value, comprising the brightness of the plurality of radiation-emitting semiconductor components (311, 312, 313, 314, 321, 322, 323, 324 ). Furthermore, a lighting device is provided, comprising a support (1), a plurality of light modules (21, 22, 23), a plurality of radiation-emitting semiconductor components (311, 312, 313, 314, 321, 322, 323, 324) and a heat-regulating Contraption.

Description

The The invention relates to a lighting device.

From the publication WO 2007/076819 A1 a lighting device is known.

A Task of at least one embodiment is a Indicate lighting device with a brightness control. An object of at least one further embodiment is it, a lighting device with a thermoregulation specify.

These Tasks are performed by lighting equipment according to the independent claims solved. Advantageous embodiments and further developments of Lighting device are in the dependent claims and continue to be understood from the description below out. The disclosure of the claims is hereby explicitly incorporated by reference into the description.

• – einen Träger und
• – eine Mehrzahl von Lichtmodulen auf dem Träger, wobei
• – auf jedem der Lichtmodule jeweils eine Mehrzahl von strahlungsemittierenden Halbleiterbauelementen in mehreren Zeilen angeordnet ist, wobei
• – jede der mehreren Zeilen zumindest zwei der strahlungsemittierenden Halbleiterbauelemente umfasst,
• – jedem der Mehrzahl der Lichtmodule eine Regelungsvorrichtung zugeordnet ist zur Regelung der Helligkeit des jeweiligen Lichtmoduls und
• – jedem der Mehrzahl der Lichtmodule eine Sensoreinheit zugeordnet ist zur Ermittlung von zumindest einem Messwert, umfassend die Helligkeit der Mehrzahl der strahlungsemittierenden Halbleiterbauelemente des jeweiligen Lichtmoduls.

In accordance with at least one embodiment, a lighting device comprises

• - a carrier and
• - A plurality of light modules on the carrier, wherein
• - In each case, a plurality of radiation-emitting semiconductor components is arranged in several rows on each of the light modules, wherein
• Each of the plurality of rows comprises at least two of the radiation-emitting semiconductor components,
• - Each of the plurality of light modules is associated with a control device for controlling the brightness of the respective light module and
• - Each of the plurality of light modules is associated with a sensor unit for determining at least one measured value, comprising the brightness of the plurality of radiation-emitting semiconductor components of the respective light module.

"Light module" can Here and below, an arrangement of the plurality of radiation-emitting Semiconductor devices in groups, subfields, fields or so mean "local dimming areas".

"Plural" or "multiple" can here and below a number, such as light modules or radiation-emitting Semiconductor devices, denote larger or equal to two.

That a first device, such as a plurality of light modules "on" a second Device such as a carrier arranged or applied, can mean here and below, that the first device directly in direct mechanical and / or electrical contact disposed on the second device is. Furthermore, it may also mean that the first device indirectly arranged "on" the second device is. It can then other devices between the be arranged first and the second device.

That a light module is arranged on the carrier can continue mean that the carrier is suitable and intended is to carry the light module. For this purpose, the light module can be flat be arranged on the carrier. Furthermore you can the light module and the carrier also interlock. Furthermore, the carrier may also partially enclose the light module, approximately in edge regions of the light module.

A Line with a plurality of elements can be found here and below an arrangement of the elements along a line extension direction mean, so about a linear arrangement of the elements or a Arrangement of elements along a curved line. A plurality of lines can be arranged such that the row extension directions are parallel to each other and that Elements of different rows are arranged in columns. A Arrangement of a plurality of rows, each having a plurality of Elements can particularly preferably be a matrix-like arrangement mean the elements. It must have the rows and columns not necessarily perpendicular to each other. For example, the matrix-like arrangement a rectangular, square or hexagonal Have arrangement of elements.

In The lighting device described here becomes the radiation-emitting Semiconductor devices in multiple lines in each of the plurality of light modules arranged. In this case, each of the light modules become a control device and associated with a sensor unit, which may advantageously mean that each of the multi-line light modules individually by the respective Control device can be controlled. Such a control device can regulate the brightness of each light module individually, by the control device to the at least one measured value reacted, which was determined by the sensor unit.

The measured value, such as a measured value for the brightness, is determined by the respective sensor unit which is assigned to each of the plurality of light modules. The brightness of a light module corresponds to a measure of the light output and / or light intensity emitted by the semiconductor components of the light module. Therefore can be determined by the sensor unit of each light module, a so-called actual value for the brightness of each light module, which is compared by the control device with a given target value. Accordingly, a specific brightness value, which is based on the desired value, can be set for each of the light modules by the control device. Also, the control device may be adapted to correct a difference between the actual value and the target value of the brightness of the individual light modules and to synchronize the respective brightness of a plurality of the light modules.

there can be "radiation", "electromagnetic radiation" or "light" here and hereinafter an electromagnetic radiation with at least a wavelength or a spectral component in an infrared to ultraviolet wavelength range mean. In particular, infrared, visible and / or be called ultraviolet electromagnetic radiation.

there can be a "target value" here and below one Leadership or target size or one to be achieved Measured value, for example for the brightness, achieved in a control loop and by a regulator, such as a control device is to be maintained. "Actual value" can here and below a controlled variable such as one currently for the brightness of a single light module mean measured value. If the actual value deviates from the setpoint value from, it is tried, this so-called control difference by means of the controller to eliminate.

In order to the impression of brightness from the sensor unit as possible evenly from each individual radiation-emitting Semiconductor device of a single light module is perceived and the resulting average reading for the Brightness of a light module the lowest possible standard deviation has, the sensor unit can continue between two lines the plurality of radiation-emitting semiconductor devices arranged be. The multi-line radiation-emitting semiconductor components may be preferred a light module evenly spaced to Sensor unit to be arranged on each light module.

Farther For example, the light modules may have a polygonal shape or be circular, so that the radiation-emitting Semiconductor devices on the light module as equal as possible Have distance to the sensor unit. In this case, the sensor unit preferably centrally between the individual radiation-emitting Semiconductor devices may be arranged so that the radiation-emitting Components a uniform distance to the sensor unit can have.

The polygonal shape of the light modules, preferably a rectangular, a square or hexagonal shape, may be advantageous because this a more efficient arrangement of the light modules on the support and thus enable a more cost-effective mode of production can. Furthermore, a polygonal shape and in particular a rectangular, square or hexagonal shape of the light modules to be preferred, since this is an arrangement of the radiation-emitting Enable semiconductor devices in a matrix form on the light module can. In a matrix form, the multiline arranged radiation-emitting semiconductor components on the light module also be controlled by lines and columns or be controlled (so-called 2D dimming). Such a summary from radiation-emitting semiconductor components to light modules can be used for example in a backlight application.

Farther can any control device of each light module be suitable, each of the radiation-emitting semiconductor components of the respective Light module impose an operating current and this depending on the sensor unit of the respective Light module determined to regulate at least one measured value. In a preferred embodiment is each control device as a driver.

The Sensor unit and the control device can continue Be part of a control loop. It can be a loop represent a feedback system that has a regulator, such as the control device, which is in feedback with the sensor unit, the operating current through each of the radiation-emitting Semiconductor devices controls.

Farther can the lighting device according to one embodiment a thermoregulating device for thermoregulation the majority of the radiation-emitting semiconductor components of include respective light module. In this case, such a heat-regulating Device features and / or feature combinations, the will be described below.

Farther can the carrier, the light modules and the semiconductor devices Have features and / or feature combinations described below become.

• – einen Träger,
• – eine Mehrzahl von Lichtmodulen auf dem Träger, wobei auf jedem der Mehrzahl der Lichtmodule jeweils eine Mehrzahl von strahlungsemittierenden Halbleiterbauelementen angeordnet ist, und
• – eine wärmeregulierende Vorrichtung zur Wärmeregulation der Mehrzahl der strahlungsemittierenden Halbleiterbauelemente des jeweiligen Lichtmoduls.

In accordance with at least one further embodiment, a lighting device comprises

• A carrier,
• - A plurality of light modules on the Trä ger, wherein in each case a plurality of radiation-emitting semiconductor components is arranged on each of the plurality of light modules, and
• A heat-regulating device for heat regulation of the plurality of radiation-emitting semiconductor components of the respective light module.

at conventional lighting devices can the light modules are arranged on a common carrier be that the individual light modules with each other thermally can influence. A thermal influence can for example, by a heat conduction between the light modules be possible through subregions of the carrier. in the In contrast, in the case of the illumination device described here the arrangement of the heat regulating device thermal decoupling allow the light modules from each other so that they are for yourself can be treated as isothermal.

The Thermal decoupling can be made possible, for example be that a heat conduction between two light modules reduced or compared to known lighting devices is prevented. As a result, for example, a heat conduction path can be achieved between two light modules, the one in comparison to known lighting devices lower thermal conductivity having. Alternatively or in addition to thermal decoupling via a reduction or prevention of heat conduction between two light modules, the heat-regulating device can also the derivative of the radiation-emitting semiconductor devices allow arising heat from the light modules away.

there can the radiation-emitting semiconductor devices Heat sources that vary in operation May have brightnesses. The different brightnesses can lead to different thermal states lead the radiation-emitting semiconductor devices. Accordingly, it is principally above all in known lighting devices possible that is different bright and adjacent arranged radiation-emitting semiconductor devices thermally can influence. Especially in the case of radiation-emitting Semiconductor devices, such as light emitting diodes, the light With a red color spectrum emit, can a thermal influence be detrimental to each other, since the thermal influence too Color distortions and brightness differences of the red ones Can lead light emitting diodes.

A Derivation of the heat generated by the heat source by means of such a heat-regulating device can thereby allow a thermal influence adjacent to different light modules arranged radiation-emitting Semiconductor components largely omitted.

A another embodiment of a heat-regulating Device may comprise a thermal insulator, at least two of the plurality of light modules thermally isolated from each other. Such a thermal insulator can thus the at least two Decouple light modules thermally from each other, so that this Light modules, for example, portions of a backlight back wall can not thermally affect. "Thermally isolate "and" thermally decouple "can Here and below mean that the heat flow or heat input from a first light module to another, for example, adjacent, second light module reduced as compared to known lighting devices so far or completely prevents the operating condition, so for example the Brightness, the second light module at least substantially or not at all affected by the first light module.

The may mean, for example, a difference in brightness or a difference in the respective operating current impressed on the semiconductor components, which exist between the at least two of the plurality of light modules can, for different thermal states the individual light modules can lead. By the thermal Isolation of the individual light modules from each other can be a mutual Prevents thermal influence on the light modules or at least be reduced.

A see preferred embodiment of the thermal insulator ago that the thermal insulator of a thermally non-conductive Material may be formed, for example, a plastic such as a thermoplastic or a thermoset or a combination this. Furthermore, it may in the execution of the thermal Insulator may be beneficial if such a plastic in addition has reflective properties to absorb absorption losses prevent or at least reduce it. As such a reflective Plastic, for example, under the brand name POCAN of Company Bayer available material from the material group the polybutylene terephthalate (PBT) can be used. additionally or alternatively, combinations of other polyester materials, combinations thermoplastic plastics or combinations of thermally non-conductive plastics conceivable, which have reflective properties.

In a preferred embodiment may the thermal insulator may be arranged between at least two light modules. Furthermore, a thermal insulator can be arranged between in each case two light modules arranged adjacently on the support.

Further For example, a thermal insulator can be designed as a web be located on the support or in the carrier is formed. The web can be a thermal decoupling of two adjacent arranged light modules, each with different brightness states, the different thermal states of the individual light modules lead, by reducing the heat conduction between the light modules.

alternative or additionally, the carrier itself may also be considered thermoregulating device and in particular as a thermal Insulator be executed by the carrier off a thermally non-conductive material, for example from one of the plastics already described or from another, thermally non-conductive material such as Polyvinyl chloride can be selected, is formed. In such an embodiment is also conceivable that the carrier as a thermal insulator between the at least two light modules is arranged and the two light modules, for example are each designed as printed circuit boards.

Farther it may be in such an embodiment of the thermal insulator be advantageous as a bridge between the at least two light modules, if the thermal insulator is formed such that no shading the radiation-emitting semiconductor devices and thus no thereby reducing the light emission due to the thermal insulator occurs.

According to one Another embodiment, the thermal insulator a Thinning, an incision, a dent, a notch or a taper of the carrier between two light modules exhibit. In a preferred embodiment, this may mean that the cross-section of the carrier by the thinning, the incision, the indentation, the notch or the rejuvenation is reduced and thereby the at least two light modules in the top sense thermally isolated from each other. Such Execution of the thermal insulator may allow that the thermal path between two light modules through the reduced Beam cross-section is tapered and a heat transfer between the two light modules thus difficult, that is prevented or at least reduced. A particularly preferred Embodiment of the reduced carrier cross section between the two of the plurality of light modules may take the form of a Air bridge or be formed in an air gap.

there the carrier may preferably be designed as a printed circuit board be, on one of the plurality of light modules facing side electrical contacts for making electrical contact with the Light modules arranged radiation-emitting semiconductor devices can have. Furthermore, the executed as a printed circuit board Carrier, for example, an electrically insulating body like a glass fiber fabric with an epoxy coating, wherein the on one of the plurality of light modules facing side arranged electrical contacts designed as printed conductors could be. Accordingly, the radiation-emitting Semiconductor devices of each light module on the Conductors are contacted electrically on the circuit board. Alternatively, the carrier can also be designed as a metal core board be.

Farther The carrier may be inelastic or as a flexible circuit board be executed. The printed circuit board can be flexible Basic body include, made of a flexible, electric insulating material such as polyimide, polyethylene naphthalate or off Polyethylene or contain at least one of these materials can. On the body can be electrical Be structured tracks. The flexible circuit board can, for example designed as a flexible printed circuit board (Printed Flex Board) be. Preferably, the printed circuit board is designed so flexible, that it can be rolled up. That may mean that the circuit board in a "roll-to-roll" process with the radiation-emitting Semiconductor devices can be populated. The stocked Printed circuit board is then preferably also rolled up again. alternative to the carrier, as already described, also the majority of light modules designed as printed circuit boards and in each case all those described for printed circuit boards Features and combinations.

According to one Another embodiment, the thermal insulation be formed by at least two light modules, that the at least two light modules on the support with a distance from greater than or equal to 5 mm to less than or equal to 50 mm, preferably with a distance of greater or equal to 20 mm to less than or equal to 30 mm, adjacent to each other are arranged. The distance between the two of the Majority of the light modules be suitable, the two light modules thermally separate from each other.

In addition to the thermal insulation by reducing or preventing the heat conduction between two light modules, the heat-regulating device can dissipate the resulting heat alternatively or additionally. This could be the meregulierende device comprise a heat sink, which is arranged on a side facing away from the plurality of radiation-emitting semiconductor devices surface of the light modules or the carrier.

A "heat sink" can here and below a thermodynamic environment with a high Denote heat capacity and continue to do so be characterized in that it is able to with a high heat absorption to maintain a quasi-stationary temperature state. The Efficiency of a heat sink can further by a high (Through) conductivity of the material of the heat sink be characterized.

So For example, a metal layer, such as a Base plate made of aluminum or another metal such as copper or Silver, or a metal foil used as a heat sink, that on the of the radiation-emitting semiconductor devices remote surface of the light modules or the carrier is arranged. Such a metal foil or metal layer can the heat of the radiation-emitting semiconductor components record and deduce, while doing the carrier and on him arranged light modules on a quasi-stationary Keep temperature. In this case, the metal foil, for example glued, printed, stamped or painted on by the majority the radiation-emitting semiconductor devices facing away from the surface the light modules or the carrier are applied. additionally may be on one of the radiation-emitting semiconductor devices remote surface of the light modules or the carrier arranged heat sink according to another Be arranged embodiment over the entire surface. This can be a large-scale derivative allow the resulting heat.

According to one Another embodiment, the heat sink a Include heat sink or as a heat sink be executed. For example, one is conceivable, for example the side facing away from the majority of the light modules side of the carrier applied, metal block, a metal layer or a bottom plate made of aluminum or another thermally conductive metal like copper or silver. Such a heat sink can additionally surface structures, such as Roughening, a ripple or ribbed structure with cooling fins, fins and / or fins for cooling and by riveting, Gluing or screwing on that of the radiation-emitting semiconductor devices remote surface of the light modules or the carrier be applied. The surface structures can the surface of the heat sink in addition enlarge and thus the cooling effect of Increase heat sink.

Farther can be a massive metal plate with pressed or soldered Slats made of copper or aluminum or also milled from solid material, stamped or formed cooling plates, or attachable cooling stars and cooling vanes made of aluminum spring bronze or sheet steel be used as a heat sink.

there represents a metal layer, such as a bottom plate Aluminum, an example of a passive heat sink dar. A passive heat sink characterized by that he acts primarily by convection. Preferably, aluminum may be due to its low material price, the easy processing, the lower density, the heat capacity and the satisfactory conductivity for a passive Heat sink can be used. Copper has a higher thermal conductivity, however, is more expensive and difficult to process and is therefore mainly for active heatsinks like fans or in Liquid chillers used.

In In a preferred embodiment, the heat sink and at least one light module or the heat sink and the carrier be formed integrally. In such an execution The carrier and / or the light modules may be preferred include a metal that is on the of the radiation-emitting Surface facing away from semiconductor devices, for example may have a ripple as a heat sink.

additionally can on the of the radiation-emitting semiconductor devices opposite surface of the carrier and / or the Light modules another heat sink, for example in shape be applied to a heat sink. This can a direct thermal coupling of the radiation-emitting semiconductor components to the heat sink and the most efficient Heat dissipation to that of the radiation-emitting Allow semiconductor device remote surface.

According to one Another embodiment, the heat sink deepened arranged in the carrier or in at least one of the light modules be. In this case, for example, a metal core can be used, which engrossed in the carrier or in at least one of the light modules is arranged.

Farther The heat sink can be horizontal and / or vertical Direction by the carrier or by at least one light module extend through. In the case of a metal core, such an increased lateral thermal conductivity can be achieved.

According to a further embodiment, the carrier or at least one light module can have openings, wherein the heat sink can be arranged in the openings. This can be significant th, that in the carrier or in the light module as a heat sink vias or preferably so-called thermal vias can be arranged, which extend through the carrier or through the light module and can improve the heat transfer perpendicular to the carrier or the light module.

When thermal vias may be called vias, which are formed of copper and thus the high thermal conductivity of copper for heat dissipation. These Vias may preferably be regular in a dense arrangement, such as in a grid of for example, greater than or equal to 0.1 mm to smaller or equal to 2.0 mm in the carrier. The thermal Vias can be larger in diameter or equal to 0.25 mm to less than or equal to 1.5 mm.

According to one Another embodiment, the openings filled with a thermally conductive material be. These filled with, for example, a thermal grease openings can be beneficial for further processing be soldered on the filled openings can be. Furthermore, these filled openings a direct conductive connection between the light modules as heat sources on one side of the carrier and a heat sink on the one of the plurality of light modules allow the opposite side of the carrier.

According to one Another embodiment, the carrier in a Be divided into a plurality of segments, wherein each of the plurality the light modules on each one of the plurality of segments of the carrier is arranged and each of the plurality of light modules on the of the plurality of radiation-emitting semiconductor devices side facing away from the wearer has the heat sink. This may mean, on the one hand, that each of the plurality of light modules can be arranged on a respective carrier segment and so that from another light module on another carrier segment is thermally isolated.

Farther is also conceivable, each carrier segment an individual Heat sink such as a heat sink assigned to one of the radiation-emitting semiconductor devices can be arranged opposite side of the carrier or Alternatively, may be arranged in the carrier, wherein the Carrier can also represent the heat sink itself.

Of Furthermore, at least one segment of the carrier or at least a light module is arranged between thermally insulating holders be. These holders may preferably be so-called I-profiles made of materials such as polyimide, Teflon, Polystyrene, polyamide and plastics, such as thermoplastic Plastics, can be formed. It can the carrier segments between the two electrically insulating Holders, also called I-profiles, I-beams or double-T beams be arranged, each of which is electrically insulating holder has two major surfaces that over one tapered bridge are connected. The two main surfaces For example, they can be larger in length or equal to 20 mm, preferably a length of about 10 mm exhibit. It will be during the arrangement of the carrier of each carrier segment between two of these electrically insulating holder on both sides of the carrier segment each greater than or equal to 0.5 mm and smaller or equal to 3 mm, preferably about 2 mm of the carrier segment by covered the I-profile.

A Such arrangement of the carrier segments between two thermally insulating holders can help reduce the thermal impact, the of two light modules with different brightness states assumes to largely contain, so that the light modules by such a holder between two such holders is thermally isolated.

In an embodiment in which at least one light module between two thermally insulating holders is arranged, may be preferred the carrier or a carrier segment as thermal be executed insulating holder. It is also conceivable on the side facing away from the radiation-emitting semiconductor devices Surface of the at least one light module a heat-regulating Device, for example, to arrange a heat sink, wherein the light module alternatively the heat regulating device can also include. Alternatively or additionally are also Combinations of light modules and carrier segments possible, which can be arranged between thermally insulating holders.

Further Advantages, preferred embodiments and developments the lighting device will become apparent from the below and in conjunction with the figures explained embodiments. Show it:

1A a schematic representation of a lighting device according to an embodiment in supervision,

1B a schematic representation of a lighting device according to another embodiment,

2A and 2 B schematic representation lungs of lighting devices according to further embodiments in supervision,

3A . 3B . 3C and 3D schematic representations of lighting devices according to further embodiments,

4A a schematic sectional view of a lighting device according to another embodiment,

4B a schematic representation of a lighting device according to the embodiment of 4A in supervision,

4C a schematic sectional view of a lighting device according to another embodiment,

4D a schematic representation of a lighting device according to the embodiment of 4C in supervision,

5A to 5D schematic representations of a lighting device according to another embodiment in three-dimensional views and

6 a schematic representation of a lighting device according to another embodiment.

In The embodiments and figures are the same or like-acting components each with the same reference numerals Mistake. The illustrated components as well as the size ratios the components among each other are not to scale to watch. Rather, some details of the figures are for the better Understanding shown exaggeratedly large.

1A shows an embodiment of a lighting device with a carrier 1 on which two light modules 21 . 22 are arranged. On each of the light modules 21 . 22 are each four radiation-emitting semiconductor devices 311 . 312 . 313 . 314 and 321 . 322 . 323 . 324 in two lines 411 . 412 and 421 . 422 arranged. In this case, each of the lines points 411 . 412 . 421 . 422 in each case at least two radiation-emitting semiconductor components 311 . 312 . 313 . 314 . 321 . 322 . 323 . 324 on. Alternatively to the embodiment shown here, it is also conceivable that more than two radiation-emitting semiconductor components are arranged in one row and / or that more than two rows per light module are present and / or that more than two light modules on the carrier 1 are arranged.

The two each in a row 411 . 412 respectively 421 . 422 arranged radiation-emitting semiconductor devices 311 . 312 . 313 . 314 and 321 . 322 . 323 . 324 may preferably comprise light-emitting diodes. Four light-emitting diodes, such as one light-emitting diode which emits light of one wavelength of a red spectral range, one light-emitting diode which emits light of one wavelength of a blue spectral range, and two light-emitting diodes which emit light of one wavelength of a green spectral range preferably always form a radiation-emitting semiconductor component 311 . 312 . 313 . 314 . 321 . 322 . 323 . 324 , This may mean that at least two light-emitting diodes can emit light with at least two different spectra, so that, for example, white light results due to the superimposition of the spectra.

Such a radiation-emitting semiconductor component 311 . 312 . 313 . 314 . 321 . 322 . 323 . 324 may further comprise one or more multilayer stacks of functional layers having at least one light-emitting layer. The functional layers may be selected from n- and p-type layers, such as electron injection layers, electron transport layers, hole blocking layers, electron blocking layers, hole transport layers, and hole injection layers.

The For example, a light-emitting layer may be a conventional one pn junction, a double heterostructure, a single quantum well structure (SQW structure) or a multiple quantum well structure (MQW structure), a luminescent or fluorescent material, wherein light by the recombination of electrons and holes in the Light emitting layer is generated. The functional layers may include organic and / or inorganic materials.

One Organic material can be organic polymers or small organic ones Include molecules. Preferably, organic polymers include fully or partially conjugated polymers.

Suitable organic polymer materials include at least one of the following materials in any combination: poly (p-phenylenevinylene) (PPV), poly (2-methoxy-5 (2-ethyl) hexyloxyphenylenevinylene) (MEH-PPV), at least one PPV derivative ( for example dialkoxy or dialkyl derivatives) polyfluorenes and / or copolymers comprising polyfluorene segments, PPVs and related copolymers, poly (2,7- (9,9-di-N-octylfluorene) - (1,4-phenylene - (4- secbutylphenyl) imino) -1,4-phenylene) (TFB), poly (2,7- (9,9-di-N-octylfluorene) - (1,4-phenylene - ((4-methylphenyl) imino) -1 , 4-phenylene - ((4-methylphenyl) imino) -1,4-phenylene)) (PFM), poly (2,7- (9,9-di-N-octylfluorene) - (1,4-phenylene-) ((4-methoxyphenyl) imi no) -1,4-phenylene)) (PFMO), poly (2,7- (9,9-di-N-octylfluorene) (F8), poly (2,7 (9,9-di-N-octylfluorene ) -3,6-benzothiadiazole) (F8BT), or poly (9,9-dioctylfluorene).

As an alternative to polymers, it is also possible to use small organic molecules in the organic functional layer. Examples of such small molecules are, for example: aluminum tris (8-hydroxyquinoline) (Alq ₃ ), aluminum 1,3-bis (N, N-dimethylaminophenyl) -1,3,4-oxydazole (OXD-8), aluminum oxo-bis (2-methyl-8-quinoline), aluminum bis (2-methyl-8-hydroxyquinoline), beryllium bis (hydroxybenzoquinoline) (BEQ ₂ ), bis (diphenylvinyl) biphenylene (DPVBI), and arylamine-substituted distyrylarylenes (DSA amines).

Of Further, the functional layer may be inorganic materials such as III / V compound semiconductors such as nitride and / or phosphide compound semiconductors containing based materials.

"Based on nitride compound semiconductors" in the present context means that the functional layer comprises a nitride III / V compound semiconductor material, preferably Al _n Ga _m In _{1 nm} N, where 0 ≦ n ≦ 1, 0 ≦ m ≦ 1 and n + m ≤ 1. This material does not necessarily have to have a mathematically exact composition according to the above formula. Rather, it may comprise one or more dopants as well as additional constituents which do not substantially alter the characteristic physical properties of the Al _n Ga _m In _1-nm N material. For the sake of simplicity, however, the above formula contains only the essential constituents of the crystal lattice (Al, Ga, In, N), even if these may be partially replaced by small amounts of other substances.

As used herein, "phosphide compound semiconductor-based" means that the functional layer comprises a phosphide III / V compound semiconductor material, preferably Al _n Ga _m In _1-nm P, where 0 ≦ n ≦ 1, 0 ≦ m ≦ 1 and n + m ≤ 1.

Farther can the functional layers in addition or alternatively also a semiconductor material based on AlGaAs or an II / VI compound semiconductor material.

• – der Leuchtdiodenchip umfasst eine epitaktisch gewachsene Halbleiterschichtenfolge mit einer zu einem Trägerelement, insbesondere zu einem Trägersubstrat hingewandten Hauptfläche an der weiterhin eine Spiegelschicht aufgebracht oder ausgebildet ist, die zumindest einen Teil der in der Halbleiterschichtenfolge erzeugten elektromagnetischen Strahlung in diese zurückreflektiert,
• – der Dünnfilm-Leuchtdiodenchip weist ein Trägerelement auf, bei dem es sich nicht um das Wachstumssubstrat handelt, auf dem die Halbleiterschichtenfolge epitaktisch gewachsen wurde, sondern um ein separates Trägerelement, das nachträglich an der Halbleiterschichtenfolge befestigt wurde,
• – die Halbleiterschichtenfolge weist eine Dicke im Bereich von 20 μm oder weniger, insbesondere im Bereich von 10 μm oder weniger auf,
• – die Halbleiterschichtenfolge ist frei von einem Aufwachssubstrat. Vorliegend bedeutet ”frei von einem Aufwachssubstrat”, dass ein gegebenenfalls zum Aufwachsen benutztes Aufwachssubstrat von der Halbleiterschichtenfolge entfernt oder zumindest stark ausgedünnt ist. Insbesondere ist es derart gedünnt, dass es für sich oder zusammen mit der epitaktischen Halbleiterschichtenfolge alleine nicht freitragend ist. Der verbleibende Rest des stark gedünnten Aufwachssubstrats ist insbesondere als solches für die Funktion eines Aufwachssubstrates ungeeignet, und
• – die Halbleiterschichtenfolge enthält mindestens eine Halbleiterschicht mit zumindest einer Fläche, die eine Durchmischungsstruktur aufweist, die im Idealfall zu einer annähernd ergodischen Verteilung des Lichtes in der Halbleiterschichtenfolge führt, das heißt, sie weist ein möglichst ergodisch stochastisches Streuverhalten auf.

At least one of the radiation-emitting semiconductor components 311 . 312 . 313 . 314 . 321 . 322 . 323 . 324 may in particular have features of a thin-film light-emitting diode chip. A thin-film light-emitting diode chip is characterized by at least one of the following characteristic features:

• The light-emitting diode chip comprises an epitaxially grown semiconductor layer sequence with a main surface facing a carrier element, in particular with a carrier substrate, on which a mirror layer is further applied or formed, which reflects back at least part of the electromagnetic radiation generated in the semiconductor layer sequence,
• The thin-film light-emitting diode chip has a carrier element which is not the growth substrate on which the semiconductor layer sequence has been epitaxially grown, but rather a separate carrier element which was subsequently attached to the semiconductor layer sequence,
• The semiconductor layer sequence has a thickness in the range of 20 μm or less, in particular in the range of 10 μm or less,
• - The semiconductor layer sequence is free of a growth substrate. In the present context, "free of a growth substrate" means that a growth substrate which may be used for growth is removed from the semiconductor layer sequence or at least heavily thinned out. In particular, it is thinned such that it alone or together with the epitaxial semiconductor layer sequence is not self-supporting. The remainder of the highly thinned growth substrate is in particular unsuitable as such for the function of a growth substrate, and
• - The semiconductor layer sequence contains at least one semiconductor layer having at least one surface having a mixing structure, which leads in the ideal case to an approximately ergodic distribution of light in the semiconductor layer sequence, that is, it has the most ergodisch stochastic scattering behavior.

A basic principle of a thin-film light-emitting diode chip is, for example, in the document Schnitzer et al., Applied Physical Letters 63 (16), 18 October 1993, pages 2174 to 2176 , the disclosure of which is hereby incorporated by reference. Exemplary of thin-film light-emitting diode chips are in the documents EP 0905797 A2 and WO 02/13281 A1 described, the disclosure of which extent hereby also be taken by reference.

One Thin-film LED chip is in good approximation a Lambert surface radiator and is suitable from therefore, for example, good for use in a headlamp, such as a motor vehicle headlight.

Furthermore, the light modules can 21 . 22 have a polygonal or a circular shape, wherein a rectangular shape of the light modules 21 . 22 is preferred. A rectangular version of the light modules 21 . 22 As in the embodiment shown allows a matrix-like arrangement of the radiation-emitting Halbleiterbauele mente 311 . 312 . 313 . 314 . 321 . 322 . 323 . 324 each on a light module 21 . 22 and the control of the light modules in rows and columns (2D dimming).

In particular, such a shape of the light modules 21 . 22 in which the majority of the radiation-emitting semiconductor components 311 . 312 . 313 . 314 . 321 . 322 . 323 . 324 evenly spaced to a sensor unit 61 . 62 on the light module 21 . 22 can be arranged. Such a sensor unit 61 . 62 may be suitable, the brightnesses of each radiation-emitting semiconductor device 311 . 312 . 313 . 314 . 321 . 322 . 323 . 324 of the respective light module 21 . 22 to investigate. These are the sensor units 61 . 62 formed in the embodiment shown as light detectors, such as photodiodes or light-sensitive resistors. The sensor units 61 and 62 are designed such that in each case a part of the radiation-emitting semiconductor components 311 . 312 . 313 and 414 respectively 321 . 322 . 323 and 324 radiated light can be detected. From the brightness values of each radiation-emitting semiconductor component 311 . 312 . 313 . 314 . 321 . 322 . 323 . 324 of each light module 21 . 22 can then be an actual value of the brightness of the respective light module 21 . 22 be determined, the to a control device 51 . 52 can be transmitted and compared with a target value.

By the control device 51 . 52 , which can be designed as a driver or as a microcontroller, can therefore for each of the light modules 21 . 22 a certain brightness value can be set, which is based on the desired value. Likewise, the control device 51 . 52 be suitable to a difference between the actual value and the target value of the brightness of the individual light modules 21 . 22 to correct and the brightness of a majority of the light modules 21 . 22 to synchronize.

In particular, the control device 51 . 52 every light module 21 . 22 suitable for each of the radiation-emitting semiconductor components 311 . 312 . 313 . 314 . 321 . 322 . 323 . 324 of the respective light module 21 . 22 impressed operating current as a function of each sensor unit 61 . 62 of the respective light module 21 . 22 to determine the measured value. Thus, the individual light modules 21 . 22 individually by such a control device 51 . 52 be managed. Furthermore, such an individual control of the individual light modules allows 21 . 22 in addition to the correction of the brightness by controlling the operating current through the respective control device 51 . 52 the synchronization of the individual light modules 21 . 22 ,

In 1B is another embodiment of a lighting device, for example, for backlighting a screen. Thereby are on a carrier 1 , which is shown only as a section, arranged a plurality of light modules, with the sake of clarity, only the light modules 21 and 22 Marked are. The number of light modules and the arrangement in rows and columns on the support 1 can be selected according to the requirements of the lighting device, for example, in terms of their size. Also, the light modules, which are executed rectangular in the embodiment shown, another, for example, polygonal shape, such as a square or hexagonal shape, have.

Each of the light modules, which are designed as lyre plates, has radiation-emitting semiconductor components which are arranged in four rows of six radiation-emitting semiconductor components. In this case, each of the radiation-emitting semiconductor components, of which purely by way of example the semiconductor components 311 . 312 . 313 . 314 and 321 . 322 . 323 . 324 with reference numerals, four light-emitting diodes (LEDs), of which emit one LED red light, one LED blue light and two LEDs green light. Each of the radiation-emitting semiconductor components can thus be adjusted in terms of its emission intensity and its emitted color by superposition of the emission spectra of the four LEDs. The LEDs of a radiation-emitting semiconductor component can be arranged on the respective light module individually or in a housing provided for this purpose (packaging).

Each four of the radiation-emitting semiconductor components are combined in the illustrated embodiment into a group, as by the with 41 to 46 indicated lines is indicated. Each of the groups 41 to 46 thus comprises two rows of two radiation-emitting semiconductor components, each of which a sensor unit equidistantly assigned to the radiation-emitting semiconductor components of a group. For the sake of clarity, only the sensor units of the groups 41 and 42 with the reference numerals 61 and 62 Mistake.

Each of the sensor units, which are additionally coupled to a respective control device (not shown), serves for the electrical and thermal synchronization of the associated radiation-emitting semiconductor components of a group, so that, for the radiation-emitting semiconductor components, each of the groups 41 to 46 on a light module independently stable operating conditions are adjustable.

In addition to the number of light modules of the illumination device, the number of groups of radiation-emitting Halbleiterbauele Menten and the number of radiation-emitting semiconductor devices per group on a light module according to the requirements of the lighting device can be selected and each greater than or equal to 1.

As an alternative to the exemplary embodiment shown, each of the groups of a light module can have its own subcarrier on the light module, on which the radiation-emitting semiconductor components and the sensor unit are respectively arranged. The carrier 1 , the light modules and optionally the subcarriers can be produced as individual components or as a common component, for example by a metal-plastic molding process.

The thermal isolation of the groups of radiation-emitting semiconductor devices on a light module can by means of the distance of the groups to each other and / or by a heat-regulating device such as a thermal insulator or heat sink take place as described in the following embodiments is.

The in the 1A and 1B shown control devices 51 . 52 or the sensor units 61 . 62 are not shown in the further embodiments of clarity, but may also be present in these.

2A shows a further embodiment of a lighting device that a section of the in the 1A illustrated carrier 1 with the first lines 411 . 421 with at least two light modules 21 . 22 equivalent. On each of the light modules 21 . 22 are each two radiation-emitting semiconductor devices 311 . 312 respectively 321 . 322 arranged. Furthermore, the illumination device additionally comprises a heat-regulating device, which is mounted on the carrier 1 arranged and as a thermal insulator 71 is executed. Here is the thermal insulator 71 as a bridge between the two light modules 21 . 22 arranged and thus isolated the two light modules 21 . 22 thermally from each other.

The designed as a bridge thermal insulator 71 is arranged in a recess of the carrier and has a thermally poorly conductive plastic as stated in the general part on. As a result, the carrier cross-section, via the heat conduction between the light modules 21 and 22 can take place, reducing the heat exchange between the light modules 21 and 22 can be significantly reduced. As an alternative to the embodiment shown, the thermal insulator 71 also as an air gap in the carrier 1 be executed, for example in the form of an opening in the carrier 1 ,

2 B shows how 2A a section of another embodiment of a similar to 1A illustrated carrier 1 with the first lines 411 . 421 with at least two light modules 21 . 22 , Thereby the two light modules become 21 . 22 in an alternative embodiment of the heat regulating device via a thermal insulator 71 in the form of a rejuvenation 72 of the carrier 1 thermally insulated. Here is the cross section of the carrier 1 in the field of rejuvenation 72 opposite the area on which the light modules 21 . 22 arranged, reduced. Through this rejuvenation 72 can the light modules 21 . 22 thermally isolated from each other by the cross-sectional area of the thermal path 73 between the two light modules 21 . 22 through the rejuvenation 72 reduced and thus the thermal influence of the two light modules 21 . 22 due to heat transfer by the wearer 1 is largely reduced.

Alternatively to the illustrated embodiments in the 2A and 2 B For example, the illumination devices shown there can each have a plurality of semiconductor components per row, a plurality of rows with semiconductor components, and / or a plurality of light modules. In particular, also several thermal insulators 71 in the form of a plurality of webs and / or a plurality of tapers in or on the carrier 1 be arranged or formed.

3A shows a further embodiment of a lighting device in a sectional view with a carrier 1 with the example in 1A each represented second lines 412 . 422 with two light modules 21 . 22 , There are on each light module 21 . 22 purely by way of example in each case two radiation-emitting semiconductor components 313 . 314 and 323 . 324 arranged.

Furthermore, the illumination device has a heat-regulating device in the form of a heat sink 8th on the carrier 1 on. Here are the carrier 1 and the heat sink 8th integrally formed so that the wearer 1 the heat sink 8th includes. This allows a direct thermal coupling of the light modules 21 . 22 to the heat sink 8th on one of the light modules 21 . 22 remote surface of the carrier 1 is arranged and thus efficient heat dissipation to that of the light modules 21 . 22 opposite side of the carrier 1 allows. Furthermore, the heat sink 8th over the entire surface of the light modules 21 . 22 remote surface of the carrier 1 arranged.

Such an arrangement can be as large as possible derivation of the semiconductor components of the light modules 21 . 22 allow generated heat to the environment. Through an efficient Heat dissipation from the light modules 21 respectively 22 to the environment can be a heat transfer between the light modules 21 . 22 itself be effectively reduced. Furthermore, the heat sink 8th Surface structures such as in the illustrated embodiment, a ripple, which is the surface of the carrier 1 increases and thus allow improved heat dissipation to the environment.

This may be particularly true if the wearer 1 is designed as a metal block, as a metallic circuit board, as a metal foil or as a metal layer. The heat sink shown in the embodiment 8th may be suitable for the heat of the carrier 1 arranged light modules 21 . 22 and to the environment of the wearer 1 derive and thereby the carrier 1 and the light modules arranged on it 21 . 22 to keep at a quasi-stationary temperature. Alternatively, the heat sink 8th also include a heat sink on top of the light modules 21 . 22 remote surface of the carrier 1 is arranged.

According to the 3B is the heat sink 8th in the carrier 1 arranged. In this case, the carrier 1 a metal core 81 on that inside the carrier 1 is arranged. For this purpose, for example, a copper block or alternatively copper or aluminum in multilayer layers in the carrier 1 be arranged. As the 3B shows, the heat sink extends 8th in horizontal direction by the carrier 1 therethrough. In the case of a metal core 81 Thus, an increased lateral thermal conductivity can be achieved as well as an effective heat conduction of the light modules 21 . 22 generated heat on the light modules 21 . 22 remote surface of the carrier 1 ,

Furthermore, the formed as a surface structure heat sink 8th of the 3A and as a metal core 81 trained heat sink 8th of the 3B be combined.

3C shows in a further embodiment openings 911 . 912 . 921 . 922 that in the carrier 1 are arranged and moved by the carrier 1 extend through. This can be the openings 911 . 912 . 921 . 922 be designed as vias or preferably as so-called thermal vias and thus as part of a heat sink 8th be educated. These thermal vias can be formed of copper and thus use the thermal conductivity of copper as heat dissipation and thus the heat transfer perpendicular to the carrier 1 improve through it.

As shown here, those are as openings 911 . 912 . 921 . 922 , which include the thermal vias, in direct contact with the light modules 21 . 22 arranged to transfer the heat generated there directly to that of the light modules 21 . 22 opposite side of the carrier 1 derive. The openings 911 . 912 . 921 . 922 may be preferred regularly in an arrangement such as a grid in the carrier 1 be arranged.

In the case of a multilayer layered arrangement of copper in the carrier 1 are next to the openings shown here 911 . 912 . 921 . 922 that is completely through the wearer 1 extend through, also plated through possible, which only pull through a copper layer. Such vias, referred to as "blind via", may, for example, be in direct contact with one of the light modules 21 . 22 stand, a copper layer such as the already in the 3B Pull through the metal core shown and then end blind on a subsequent to the copper layer insulating layer. Alternatively, plated-through holes are also conceivable which connect two copper layers to one another and thereby extend (buried via) to an insulating layer which adjoins the copper layers in each case. Furthermore, the openings 911 . 912 . 921 . 922 be filled with a thermally conductive material.

In addition, the heat sink points 8th a heat sink 82 on the most of the light modules 21 . 22 remote surface of the carrier 1 on, with a direct contact between the in openings 911 . 912 . 921 . 922 of the carrier 1 arranged through holes and the heat sink 82 will be produced.

3D shows a further embodiment of a lighting device with two light modules shown purely by way of example 21 . 22 and in each case two radiation-emitting semiconductor components 313 . 314 and 323 . 324 on the light modules 21 . 22 , These are in the light modules 21 . 22 each openings 911 . 912 . 921 . 922 arranged, extending through the light modules 21 . 22 through to one of the radiation-emitting semiconductor devices 313 . 314 . 323 . 324 remote surface 20 the light modules 21 . 22 extend. In the openings 911 . 912 . 921 . 922 are each as part of a heat sink 8th arranged thermal vias, which are those of the radiation-emitting semiconductor devices 313 . 314 . 323 . 324 generated heat to one of the radiation-emitting semiconductor devices 313 . 314 . 323 . 324 remote surface 20 the light modules 21 . 22 derives. On the of the radiation-emitting semiconductor devices 313 . 314 . 323 . 324 remote surface 20 the light modules 21 . 22 is a carrier 1 arranged, at the same time as another part of the heat sink 8th in the form of a heat sink 82 is executed, wherein the light modules 21 . 22 in each case over the entire surface of the as a heat sink 82 executed carrier 1 are arranged so that as large as possible heat dissipation can take place. As the 3D shows are those in the openings 911 . 912 . 921 . 922 arranged thermal vias and the heat sink 82 as a carrier 1 integrally formed.

The in the 2A to 3D shown heat-regulating devices can also be combined.

4A shows a further embodiment of a lighting device with thermally insulating holders 101 . 102 . 103 comprising one or a combination of the thermal insulation materials referred to in the general part. The thermally insulating holder 101 . 102 . 103 are in cross-section as I- or U-profiles for mounting and thermal insulation of at least two carriers 1 , In the illustrated embodiment in the form of two carrier segments shown purely by way of example 11 . 12 each with a light module 21 . 22 executed.

The I or U profiles used each have two base areas 104 , which have a preferred length of 10 mm, and inner surfaces 105 , which preferably have a width of 2 mm, which may mean that 2 mm of the carrier 1 , so the carrier segments 11 . 12 protrude into the I or U profile ..

Such an arrangement of the carrier segment 11 with the light module 21 and the carrier segment 12 with the light module 22 between thermally insulating holders 101 . 102 . 103 enables the thermal decoupling of the light modules 21 . 22 and on the light modules 21 . 22 arranged radiation-emitting semiconductor devices 313 . 314 . 323 . 324 through the thermally insulating holder 101 . 102 . 103 , Therefore, the thermally insulating holder 101 . 102 . 103 the thermal decoupling of the light modules 21 . 22 allow one another and therefore another example of a heat-regulating device, or for a thermal insulator 71 represent.

Such an arrangement of the light modules 21 . 22 between thermally insulating holders 101 . 102 . 103 can additionally allow the two light modules 21 . 22 are arranged with a distance of 5 mm to 50 mm and preferably with a distance of 20 mm to 30 mm.

In addition to thermal decoupling by the thermally insulating holder 101 . 102 . 103 is on the of the radiation-emitting semiconductor devices 313 . 314 . 323 . 324 remote surfaces of the carrier 1 and the light modules 21 . 22 one each as a heat sink 8th executed heat sink 82 arranged.

4B shows the embodiment of the 4A in a plan view with the purely exemplary shown two light modules 21 . 22 , each two arranged in a row radiation-emitting semiconductor devices 313 . 314 . 323 . 324 exhibit. Here are the light modules 21 . 22 each on a carrier segment 11 . 12 arranged between thermally insulating holders 101 . 102 . 103 are arranged. This is the borderline 10 up to which the carrier segments 11 . 12 in the thermally insulating holder 101 . 102 . 103 protrude and thus to the thermally insulating holder 101 . 102 . 103 adjoin, marked by the dashed line indicated.

The two carrier segments are 11 . 12 with the light modules 21 . 22 in a designed as an insulating frame thermally insulating holder with the three thermally insulating holder 101 . 102 . 103 arranged. The three thermally insulating holders form 101 . 102 . 103 a unit with openings in which the carrier segments 11 . 12 with the light modules 21 . 22 are arranged and thus enclose the light modules 21 . 22 , The with the reference number 9 provided line marks the sectional plane of the sectional view of 4A ,

As an alternative to the exemplary embodiment shown, the thermally insulating holders 101 . 102 and 103 Also be designed as separate, separated from each other components.

4C shows a further embodiment of a lighting device with thermally insulating holders 101 . 102 . 103 , which are executed in terms of their geometry as in the previous embodiment. In the embodiment shown here are the thermally insulating holder 101 . 102 . 103 as parts of a carrier 1 formed on the purely exemplary two light modules 21 . 22 are arranged. In particular, as already described in the general part of the carrier 1 as a thermally insulating holder and the light modules 21 . 22 designed as printed circuit boards. On the of the radiation-emitting semiconductor devices 21 . 22 remote surface 20 the light modules 21 . 22 is one each as a heat sink 82 trained heat sink 8th arranged with a rib structure for heat dissipation.

4D shows the embodiment of the 4C in a top view with the two light modules 21 . 22 , each two arranged in a row radiation-emitting semiconductor devices 313 . 314 . 323 . 324 exhibit. As in 4D is shown, the carrier is a frame with the holders 101 . 102 and 103 educated. Here are the light modules 21 . 22 each between the thermally insulating holders 101 . 102 . 103 arranged. The other reference numerals designate features already in connection with 4B are described.

Furthermore, a lighting device and a combination of the features in the 4A to 4D have shown embodiments. The light modules 21 . 22 can in particular be designed as printed circuit boards (PCB), for example from FR4, as metal core boards (MCPCB) or as flexboards or as a combination thereof and have conductor tracks, for example of copper with a thickness of about 35 μm, over which the radiation-emitting semiconductor components in the form of LEDs are electrically connected in packages or in the form of individual LEDs.

5A shows a further embodiment of a lighting device in a three-dimensional view with a plurality of light modules 21 . 22 . 23 , each with a thermally insulating support 1 connected to each other. In the illustrated embodiment, the carrier 1 designed as a thermally insulating holder with a circumferential I-profile. By way of example only on the light module 21 four radiation-emitting semiconductor components 311 . 312 . 313 . 314 in two lines, each with two semiconductor devices 311 . 312 respectively 313 . 314 , So two columns arranged, but there are also more or less than four radiation-emitting semiconductor devices in more or less than two columns or rows conceivable. For simplicity, on the light modules 22 . 23 no radiation-emitting semiconductor components drawn.

Here is the carrier 1 designed as a polygonal I-profile with a thermally insulating material between the light modules 21 . 22 . 23 is arranged and each two of the plurality of light modules such as the light modules 21 and 22 and the light modules 21 and 23 thermally decoupled from each other. To the light modules 22 and 23 Another carrier can be connected to further light modules for thermal decoupling. To the other sides of the carrier 1 can also connect other light modules.

5B shows the embodiment of the 5A in a three-dimensional side view with the exported as I-beam carrier 1 , Adjacent to the I-profile of the wearer 1 are each the light modules 21 . 22 . 23 arranged in addition to the thermal decoupling by the carrier 1 one as a heat sink 82 have executed heat sink for heat dissipation. Each is a light module 21 . 22 . 23 and with a heat sink 82 made in one piece. Due to the fact that the respective light module 21 . 22 . 23 each a heat sink 82 includes, is a direct heat dissipation of the example only on the light module 21 illustrated radiation-emitting semiconductor devices 311 . 312 . 313 . 314 generated heat to one of the radiation-emitting semiconductor devices 311 . 312 . 313 . 314 remote surface possible.

5C shows a section of the embodiment of 5A in a three-dimensional view of the back of the light module 21 that of the radiation-emitting semiconductor devices 311 . 312 . 313 . 314 remote surface 20 of the light module 21 equivalent. The Indian 5C shown section shows the light module 21 that from the carrier 1 is surrounded by the carrier 1 extends through.

The heat sink 82 has surface textures similar to those on the light module 21 arranged radiation-emitting semiconductor devices 311 . 312 . 313 . 314 generated heat through the structures to a surrounding or circulating medium such as air to give.

5D shows accordingly a rear view of the illustration according to 5A ,

In 6 a further embodiment of a lighting device is shown, which has a plurality of light modules, of which for clarity, only three light modules 21 . 22 . 23 are provided with reference numerals. In the present embodiment, the light modules are on a according to the 4A to 4D and 5A to 5D described carrier 1 arranged and thermally insulated by means of this. The carrier 1 is here for the sake of clarity only indicated as edge lines of the light modules and forms according to the foregoing descriptions a frame with carrier segments on which the light modules are arranged. Alternatively, the arrangement of the light modules may be carried out on a carrier or carrier segments according to one of the further preceding embodiments or a combination thereof.

Each of the light modules has a plurality of radiation-emitting semiconductor components each having four semiconductor components in three lines, of which only the lines for the sake of clarity 411 . 412 and 413 the light module 21 and the semiconductor devices 311 . 312 . 313 and 314 the line 411 are provided with reference numerals. The light modules have, for example, a visible, that is not from the carrier 1 covered area of 95.5 mm in length and 64.25 mm in width, on which the 12 arranged as LEDs radiation-emitting semiconductor devices with a line spacing of about 23.88 mm and a column spacing of about 25.48 mm are arranged. The lightweight modules are designed as printed circuit boards.

On the light modules can continue to sensor units and control devices as in connection with the 1A and 1B be arranged described.

The Lighting device has a matrix-like arrangement of the light modules in eight rows and ten columns and is particularly suitable as a backlighting device, for example, for screens, suitable. By the modular Structure and individual thermal management for the individual light modules is a scaling to larger or smaller Lighting equipment easily possible. alternative to the illustrated embodiment with rectangular light modules For example, these can be hexagonal or square be executed.

The The invention is not by the description based on the embodiments limited to these. Rather, the invention comprises each new feature as well as any combination of features which in particular any combination of features in the claims includes, even if these features or this combination of Features themselves not explicitly in the claims or embodiments is given.

QUOTES INCLUDE IN THE DESCRIPTION

This list The documents listed by the applicant have been automated generated and is solely for better information recorded by the reader. The list is not part of the German Patent or utility model application. The DPMA takes over no liability for any errors or omissions.

Cited patent literature

• WO 2007/076819 A1 [0002]
• EP 0905797 A2 [0080]
• WO 02/13281 A1 [0080]

Cited non-patent literature

• Schnitzer et al., Applied Physical Letters 63 (16), 18 October 1993, pages 2174 to 2176 [0080]

Claims (15)

Lighting device comprising - a support ( 1 ) and - a plurality of light modules ( 21 . 22 ) on the support ( 1 ), whereby - on each of the light modules ( 21 . 22 ) each have a plurality of radiation-emitting semiconductor components ( 311 . 312 . 313 . 314 . 321 . 322 . 323 . 324 ) in several lines ( 411 . 412 . 421 . 422 ), wherein - each of the several lines ( 411 . 412 . 421 . 422 ) at least two of the radiation-emitting semiconductor components ( 311 . 312 . 313 . 314 . 321 . 322 . 323 . 324 ), - each of the plurality of light modules ( 21 . 22 ) a control device ( 51 . 52 ) is assigned to control the brightness of the respective light module ( 21 . 22 ) and - each of the plurality of light modules ( 21 . 22 ) a sensor unit ( 61 . 62 ) is assigned to determine at least one measured value, comprising the brightness of the plurality of radiation-emitting semiconductor components ( 311 . 312 . 313 . 314 . 321 . 322 . 323 . 324 ) of the respective light module ( 21 . 22 ). Lighting device according to the preceding claim, wherein - the sensor unit ( 61 . 62 ) of each light module ( 21 . 22 ) between two lines ( 411 . 412 . 421 . 422 ) of the plurality of radiation-emitting semiconductor components ( 311 . 312 . 313 . 314 . 321 . 322 . 323 . 324 ) is arranged. Lighting device according to one of the preceding claims, further comprising - a heat-regulating device for heat regulation of the plurality of radiation-emitting semiconductor devices ( 311 . 312 . 313 . 314 . 321 . 322 . 323 . 324 ) of each of the plurality of light modules ( 21 . 22 . 23 ). Lighting device comprising - a support ( 1 ), - a plurality of light modules ( 21 . 22 . 23 ) on the support ( 1 ), wherein on each of the plurality of light modules ( 21 . 22 . 23 ) each have a plurality of radiation-emitting semiconductor components ( 311 . 312 . 313 . 314 . 321 . 322 . 323 . 324 ), and - a heat-regulating device for heat regulation of the plurality of radiation-emitting semiconductor components ( 311 . 312 . 313 . 314 . 321 . 322 . 323 . 324 ) of the respective light module ( 21 . 22 . 23 ). Lighting device according to claim 4, wherein - on each of the light modules ( 21 . 22 . 23 ) each have a plurality of radiation-emitting semiconductor components ( 311 . 312 . 313 . 314 . 321 . 322 . 323 . 324 ) in several lines ( 411 . 412 . 421 . 422 ), wherein - each of the several lines ( 411 . 412 . 421 . 422 ) at least two of the radiation-emitting semiconductor components ( 311 . 312 . 313 . 314 . 321 . 322 . 323 . 324 ). Lighting device according to one of claims 3 to 5, wherein - the heat-regulating device comprises a thermal insulator ( 71 ) comprising at least two of the plurality of light modules ( 21 . 22 . 23 ) thermally isolated from each other. Lighting device according to claim 6, wherein - the thermal insulator a thinning, an incision, a recess, a notch or a taper of the support ( 1 ) between at least two light modules ( 21 . 22 . 23 ) having. Lighting device according to one of claims 3 to 7, wherein - the heat-regulating device is a heat sink ( 8th ) on one of the plurality of radiation-emitting semiconductor devices ( 311 . 312 . 313 . 314 . 321 . 322 . 323 . 324 ) facing away from the surface of the light modules ( 21 . 22 . 23 ) or the carrier ( 1 ) is arranged. Lighting device according to claim 8, wherein - the heat sink ( 8th ) comprises a heat sink. Lighting device according to claim 8 or 9, wherein - the heat sink ( 8th ) and at least one light module ( 21 . 22 . 23 ) or the heat sink ( 8th ) and the carrier ( 1 ) are made in one piece. Lighting device according to one of claims 8 to 10, wherein - the heat sink ( 8th ) deepened in the carrier ( 1 ) or in at least one of the light modules ( 21 . 22 . 23 ) is arranged. Lighting device according to claim 11, wherein - the heat sink ( 8th ) by the carrier ( 1 ) or by at least one light module ( 21 . 22 . 23 ) extends therethrough. Lighting device according to one of claims 8 to 12, wherein - the support ( 1 ) or at least one light module ( 21 . 22 . 23 ) Openings ( 911 . 912 . 921 . 922 ), wherein - in the openings, the heat sink ( 8th ) is arranged. Lighting device according to one of claims 8 to 13, wherein - the carrier ( 1 ) into a plurality of segments ( 11 . 12 ), wherein - each of the plurality of light modules ( 21 . 22 . 23 ) on each one of the plurality of segments ( 11 . 12 ) of the carrier ( 1 ), and - each of the plurality of light modules ( 21 . 22 . 23 ) on the of the plurality of radiation-emitting semiconductor components ( 311 . 312 . 313 . 314 . 321 . 322 . 323 . 324 ) facing away from the carrier ( 1 ) the heat sink ( 8th ) having. Lighting device according to claim 14, wherein - at least one segment ( 11 . 12 ) of the carrier ( 1 ) or at least one light module ( 21 . 22 . 23 ) between thermally insulating holders ( 101 . 102 . 103 ) is arranged.