DE10216633B8 - Halbleiteranordnung und Verfahren zur Herstellung der Halbleiteranordnung - Google Patents

Halbleiteranordnung und Verfahren zur Herstellung der Halbleiteranordnung Download PDF

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Publication number
DE10216633B8
DE10216633B8 DE10216633A DE10216633A DE10216633B8 DE 10216633 B8 DE10216633 B8 DE 10216633B8 DE 10216633 A DE10216633 A DE 10216633A DE 10216633 A DE10216633 A DE 10216633A DE 10216633 B8 DE10216633 B8 DE 10216633B8
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Prior art keywords
semiconductor device
manufacturing
semiconductor
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Expired - Fee Related
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DE10216633A
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English (en)
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DE10216633B4 (de
DE10216633A1 (de
Inventor
Jun Sakakibara
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Denso Corp
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Denso Corp
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Publication of DE10216633B4 publication Critical patent/DE10216633B4/de
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Publication of DE10216633B8 publication Critical patent/DE10216633B8/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/781—Inverted VDMOS transistors, i.e. Source-Down VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7825—Lateral DMOS transistors, i.e. LDMOS transistors with trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
DE10216633A 2001-04-18 2002-04-15 Halbleiteranordnung und Verfahren zur Herstellung der Halbleiteranordnung Expired - Fee Related DE10216633B8 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP01-120163 2001-04-18
JP2001120163A JP3534084B2 (ja) 2001-04-18 2001-04-18 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
DE10216633A1 DE10216633A1 (de) 2002-10-24
DE10216633B4 DE10216633B4 (de) 2011-06-22
DE10216633B8 true DE10216633B8 (de) 2012-02-02

Family

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Family Applications (1)

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DE10216633A Expired - Fee Related DE10216633B8 (de) 2001-04-18 2002-04-15 Halbleiteranordnung und Verfahren zur Herstellung der Halbleiteranordnung

Country Status (3)

Country Link
US (2) US6670673B2 (de)
JP (1) JP3534084B2 (de)
DE (1) DE10216633B8 (de)

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JP2004047967A (ja) * 2002-05-22 2004-02-12 Denso Corp 半導体装置及びその製造方法
US6790713B1 (en) * 2002-09-09 2004-09-14 T-Ram, Inc. Method for making an inlayed thyristor-based device
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US7259411B1 (en) * 2003-12-04 2007-08-21 National Semiconductor Corporation Vertical MOS transistor
US7348641B2 (en) * 2004-08-31 2008-03-25 International Business Machines Corporation Structure and method of making double-gated self-aligned finFET having gates of different lengths
DE102004045966B4 (de) * 2004-09-22 2006-08-31 Infineon Technologies Austria Ag Vertikal-Feldeffekttransistor in Source-Down-Struktur
DE102004052153B4 (de) * 2004-10-26 2016-02-04 Infineon Technologies Ag Vertikales Leistungshalbleiterbauelement mit Gateanschluss auf der Rückseite und Verfahren zu dessen Herstellung
US9685524B2 (en) 2005-03-11 2017-06-20 Vishay-Siliconix Narrow semiconductor trench structure
JP4830360B2 (ja) * 2005-06-17 2011-12-07 株式会社デンソー 半導体装置およびその製造方法
TWI489557B (zh) 2005-12-22 2015-06-21 Vishay Siliconix 高移動率ｐ-通道溝槽及平面型空乏模式的功率型金屬氧化物半導體場效電晶體
US8409954B2 (en) * 2006-03-21 2013-04-02 Vishay-Silconix Ultra-low drain-source resistance power MOSFET
EP2140495B1 (de) * 2007-03-19 2017-11-08 Nxp B.V. Feldeffekttransistor mit ausgedehntem drain und versenktem gate und verfahren zu dessen herstellung
JP2009081397A (ja) * 2007-09-27 2009-04-16 Fuji Electric Device Technology Co Ltd 半導体装置および半導体装置の製造方法
JP5563760B2 (ja) * 2008-12-19 2014-07-30 ローム株式会社 半導体装置
US8004051B2 (en) * 2009-02-06 2011-08-23 Texas Instruments Incorporated Lateral trench MOSFET having a field plate
CN101840935B (zh) * 2010-05-17 2012-02-29 电子科技大学 Soi横向mosfet器件
US8432000B2 (en) 2010-06-18 2013-04-30 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
JP2012043955A (ja) * 2010-08-18 2012-03-01 Toshiba Corp 半導体装置及びその製造方法
JP2012059931A (ja) * 2010-09-09 2012-03-22 Toshiba Corp 半導体装置
US20120068222A1 (en) * 2010-09-21 2012-03-22 Kabushiki Kaisha Toshiba Semiconductor Device and Method for Manufacturing the Same
US8580650B2 (en) * 2010-10-28 2013-11-12 Texas Instruments Incorporated Lateral superjunction extended drain MOS transistor
US8455948B2 (en) 2011-01-07 2013-06-04 Infineon Technologies Austria Ag Transistor arrangement with a first transistor and with a plurality of second transistors
US8569842B2 (en) 2011-01-07 2013-10-29 Infineon Technologies Austria Ag Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices
JP2012204563A (ja) * 2011-03-25 2012-10-22 Toshiba Corp 半導体素子及び半導体素子の製造方法
US9412883B2 (en) 2011-11-22 2016-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for MOS capacitors in replacement gate process
US8866253B2 (en) 2012-01-31 2014-10-21 Infineon Technologies Dresden Gmbh Semiconductor arrangement with active drift zone
US9735243B2 (en) 2013-11-18 2017-08-15 Infineon Technologies Ag Semiconductor device, integrated circuit and method of forming a semiconductor device
US9799762B2 (en) * 2012-12-03 2017-10-24 Infineon Technologies Ag Semiconductor device and method of manufacturing a semiconductor device
WO2014086479A1 (en) * 2012-12-03 2014-06-12 Infineon Technologies Ag Semiconductor device, integrated circuit and method of forming a semiconductor device
US9306058B2 (en) 2013-10-02 2016-04-05 Infineon Technologies Ag Integrated circuit and method of manufacturing an integrated circuit
US9287404B2 (en) 2013-10-02 2016-03-15 Infineon Technologies Austria Ag Semiconductor device and method of manufacturing a semiconductor device with lateral FET cells and field plates
US9401399B2 (en) * 2013-10-15 2016-07-26 Infineon Technologies Ag Semiconductor device
US9419130B2 (en) 2013-11-27 2016-08-16 Infineon Technologies Austria Ag Semiconductor device and integrated circuit
US9400513B2 (en) 2014-06-30 2016-07-26 Infineon Technologies Austria Ag Cascode circuit
DE102016107714B4 (de) * 2015-08-14 2019-07-18 Infineon Technologies Dresden Gmbh Halbleitervorrichtung mit einer Transistorzelle, die einen Sourcekontakt in einem Graben umfasst, Verfahren zum Herstellen der Halbleitervorrichtung und integrierte Schaltung
DE102016110645A1 (de) * 2016-06-09 2017-12-14 Infineon Technologies Ag Halbleitervorrichtung mit einem eine erste feldplatte und eine zweite feldplatte aufweisenden transistor
DE102018106689B4 (de) * 2018-03-21 2020-10-15 Infineon Technologies Ag Siliziumcarbid-Halbleitervorrichtung mit einer Graben-Gatestruktur und horizontal angeordneten Kanal- und Stromausbreitungsgebieten
JP6950816B2 (ja) * 2018-03-26 2021-10-13 日産自動車株式会社 半導体装置及びその製造方法

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Patent Citations (4)

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US4796070A (en) * 1987-01-15 1989-01-03 General Electric Company Lateral charge control semiconductor device and method of fabrication
US4910564A (en) * 1987-07-01 1990-03-20 Mitsubishi Denki Kabushiki Kaisha Highly integrated field effect transistor and method for manufacturing the same
US5828101A (en) * 1995-03-30 1998-10-27 Kabushiki Kaisha Toshiba Three-terminal semiconductor device and related semiconductor devices
US6118149A (en) * 1997-03-17 2000-09-12 Kabushiki Kaisha Toshiba Trench gate MOSFET

Also Published As

Publication number Publication date
JP3534084B2 (ja) 2004-06-07
US6867456B2 (en) 2005-03-15
DE10216633B4 (de) 2011-06-22
US20020155685A1 (en) 2002-10-24
US6670673B2 (en) 2003-12-30
US20040089896A1 (en) 2004-05-13
JP2002314080A (ja) 2002-10-25
DE10216633A1 (de) 2002-10-24

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