DE10225431A1 - Method for connecting electronic components on an insulating substrate and component module produced by the method - Google Patents
Method for connecting electronic components on an insulating substrate and component module produced by the method Download PDFInfo
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- DE10225431A1 DE10225431A1 DE2002125431 DE10225431A DE10225431A1 DE 10225431 A1 DE10225431 A1 DE 10225431A1 DE 2002125431 DE2002125431 DE 2002125431 DE 10225431 A DE10225431 A DE 10225431A DE 10225431 A1 DE10225431 A1 DE 10225431A1
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- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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Abstract
Bei der Herstellung eines Bauelement-Moduls sind ein oder mehrere elektronische Bauelemente (10) zwischen einem Substrat (1) und einer Dielektrikumsschicht (13) in einer Vertiefung (3) des Substrats so positioniert, daß die Anschlüsse (11) des Bauelementes nach oben in Richtung zur Dielektrikumsschicht zeigen. Die Kontaktierung erfolgt über eine auf der Oberseite der Dielektrikumsschicht angeordnete Leiterbahnstruktur (16), welche über Durchgangslöcher einerseits zu den Anschlüssen (11) des Bauelementes (10) und andererseits zu Außenanschlüssen (6) auf Polymerhöckern (2) kontaktiert sind, wobei letztere an der Unterseite des Substrats (1) oder auf der Oberseite der Dielektrikumsschicht angeformt sein können.In the manufacture of a component module, one or more electronic components (10) are positioned between a substrate (1) and a dielectric layer (13) in a recess (3) of the substrate such that the connections (11) of the component face upwards Show direction to the dielectric layer. The contact is made via a conductor track structure (16) arranged on the top of the dielectric layer, which are contacted via through holes on the one hand to the connections (11) of the component (10) and on the other hand to external connections (6) on polymer bumps (2), the latter on the Bottom of the substrate (1) or on the top of the dielectric layer can be molded.
Description
Verfahren zur Anschlußkontaktierung von elektronischen Bauelementen auf einem isolierenden Substrat und nach dem Verfahren hergestelltes Bauelement-ModulConnection method of electronic components on an insulating substrate and component module produced by the method
Die Erfindung betrifft ein Verfahren zur Anschlußkontaktierung mindestens eines elektronischen Bauelementes mit flächigen Anschlußelementen auf einem isolierenden Substrat sowie ein nach diesem Verfahren hergestelltes Bauelement-Modul.The invention relates to a method for connection contact at least one electronic component with flat connection elements on an insulating substrate as well as one using this method manufactured component module.
Aus der
Aus der
Ziel der vorliegenden Erfindung ist es, ein Verfahren zur Kontaktierung von Bauelementen, insbesondere von Halbleiterchips auf einem Substrat anzugeben und ein derart erzeugtes Modul zu schaffen, wobei ein möglichst platzsparender Aufbau mit einfachen Verfahrensschritten einhergeht und wobei insbesondere keine Werkzeuge und Verfahrensschritte für die Kontaktierung einzelner Anschlußelemente des Bauelementes erforderlich sind.The aim of the present invention is es, a method for contacting components, in particular specify semiconductor chips on a substrate and such to create a module that is as space-saving as possible involves simple procedural steps and in particular no tools and procedural steps for contacting individuals connecting elements of the component are required.
Erfindungsgemäß weist ein Verfahren zur Anschlußkontaktierung mindestens eines elektronischen Bauelementes mit flächigen Anschlußelementen auf einem isolierenden Substrat folgende Schritte auf:
- a) das Substrat wird dreidimensional aus einem Polymermaterial geformt, wobei an der Oberseite des flachen Substrats mindestens eine Vertiefung entsprechend den Abmessungen des zu kontaktierenden Bauelementes geformt wird;
- b) das Bauelement wird in der zugehörigen Vertiefung so angeordnet, daß seine mit Anschlußelementen versehene Anschlußseite nach oben gerichtet ist und annähernd mit der Oberseite des Substrats fluchtet;
- c) die Oberseite des Substrats einschließlich des Bauelementes wird mit einer Dielektrikumsschicht bedeckt;
- d) an der äußeren Oberfläche des Substrats oder der Dielektrikumsschicht werden Außenkontakt-Höcker aus Polymermaterial angeformt;
- e) mittels Laserbestrahlung werden Durchgangslöcher (Vias) durch die Dielektrikumsschicht zu den Anschlüssen des Bauelementes und gegebenenfalls Verbindungslöcher zum Substrat gebohrt;
- f) die Oberseite der Dielektrikumsschicht und die Innenseiten der Durchgangslöcher sowie der Verbindungslöcher werden mit einer Metallisierung versehen und
- g) die Metallisierung wird mit Hilfe von Laserstrahlung strukturiert, wobei jeweils Außenkontakte auf den Außenkontakt-Höckern sowie Leiterbahnen zwischen den Anschluße lementen des Bauelementes und den Außenkontakten auf den Außenkontakt-Höckern gebildet werden.
- a) the substrate is three-dimensionally formed from a polymer material, at least one depression being formed on the top of the flat substrate in accordance with the dimensions of the component to be contacted;
- b) the component is arranged in the associated recess so that its connection side provided with connection elements is directed upward and is approximately aligned with the top of the substrate;
- c) the top of the substrate including the component is covered with a dielectric layer;
- d) external contact bumps made of polymer material are formed on the outer surface of the substrate or the dielectric layer;
- e) by means of laser radiation, through holes (vias) are drilled through the dielectric layer to the connections of the component and, if necessary, connection holes to the substrate;
- f) the top of the dielectric layer and the inside of the through holes and the connection holes are provided with a metallization and
- g) the metallization is structured with the aid of laser radiation, external contacts being formed on the external contact bumps and conductor tracks between the connection elements of the component and the external contacts on the external contact bumps.
Die erfindungsgemäße Verwendung des dreidimensionalen, durch Spritzgießen oder Heißprägen hergestellten Substrats mit einer vorgeformten Vertiefung für das Bauelement oder die Bauelemente läßt sich eine geringe Höhe des so gewonnenen Moduls einhalten, da durch die vertiefte Anordnung des Bauelementes auch die darüber angeordnete Dielektrikumsschicht nur eine relativ geringe Dicke aufweisen muß. Die Kontaktierung der Bauelement-Anschlußelemente und deren leitende Verbindung bis hin zu den externen Anschlüssen an den Polymerhöckern der Unterseite erfolgt über Laserprozesse, nämlich Strukturieren und Bohren, die mit elektronischen Masken arbeiten, so daß keine Werkzeuge und Einzelprozesse für die Verbindung einzelner Kontakte erforderlich sind. Die Genauigkeit der Laserlithographie erlaubt auch eine gegenüber der Flip-Chip-Technologie höhere Verbindungsdichte.The use of the three-dimensional, by injection molding or hot stamping Substrate with a preformed recess for the component or the components can be a low height of the module obtained in this way, because of the recessed arrangement of the component also the one above arranged dielectric layer only a relatively small thickness must have. The contacting of the component connection elements and their conductive Connection to the external connections on the polymer bumps of the Bottom is done via Laser processes, namely Structuring and drilling using electronic masks, so no Tools and individual processes for the connection of individual contacts are required. The precision Laser lithography also allows a higher connection density than flip-chip technology.
Das Substrat kann bereits vor dem Aufbringen des Bauelementes sowohl oberseitig als auch unterseitig und in Durchgangslöchern mit einer Metallisierung versehen sein, wobei bereits durch Laserstrukturierung interne Anschlußelemente auf der Oberseite, externe Anschlußelemente auf den Polymerhöckern der Unterseite und Verbindungsleiterbahnen von den internen Anschlüssen über die Durchgangslöcher zu den externen Anschlüssen gebildet werden. In diesem Fall werden nach dem Aufbringen der Dielektrikumsschicht der Metallisierung jeweils Kontaktlöcher zu den Anschlußelementen des Bauelementes und Verbindungslöcher zu den internen Anschlüssen gebohrt und entsprechende Leiterbahnen lediglich auf der Oberseite des Substrats bzw. der Dielektrikumsschicht strukturiert.Before the component is applied, the substrate can be provided with a metallization both on the top and bottom and in through holes, with internal connection elements on the top side, external connection elements on the polymer bumps on the underside and connecting conductor tracks from the internal connections via the through holes to already by laser structuring the external connections are formed. In this case, after the application of the dielectric layer, the metallization In each case, contact holes for the connection elements of the component and connection holes for the internal connections are drilled and corresponding conductor tracks are only structured on the upper side of the substrate or the dielectric layer.
Es ist aber auch möglich, das Substrat zunächst ohne Metallisierung mit dem Bauelement bzw. den Bauelementen zu bestücken und die Dielektrikumsschicht aufzubringen. In diesem Fall werden Bohrungen von der Oberseite zu den Anschlußelementen des Bauelementes wie im vorhergehenden Fall erzeugt, außerdem aber werden die Verbindungslöcher als Durchgangsbohrungen durch die Dielektrikumsschicht und das ursprüngliche Substrat bis zu dessen Unterseite erzeugt, so daß mit einer nachfolgenden Metallisierung der Oberseite und der Unterseite des Verbundkörpers zugleich auch elektrische Verbindungen von der Oberseite über die Durchgangslöcher zu der Unterseite des Substrats und zu den externen Anschlüssen auf den Polymerhöckern erzeugt werden. Durch die Strukturierung der Metallisierung auf der Oberseite und auf der Unterseite werden die einzelnen Leiterbahnen voneinander getrennt.But it is also possible that Substrate first without metallization with the component or components equip and to apply the dielectric layer. In this case there will be holes from the top to the connection elements of the component created as in the previous case, but also the connection holes are as Through holes through the dielectric layer and the original Substrate produced up to its underside, so that with a subsequent metallization the top and bottom of the composite body also electrical Connections from the top over the through holes to the bottom of the substrate and to the external connections the polymer bumps be generated. By structuring the metallization on The individual conductor tracks are on the top and on the bottom separated from each other.
In einer weiteren Ausführungsform der Erfindung werden zwei Folien mit unterschiedlichen Schmelzpunkten verwendet, wobei zunächst eine erste Folie mit einem hohen Schmelzpunkt durch Prägen mit einer oder mehreren Vertiefungen für entsprechende Bauelemente versehen und anschließend mit diesen Bauelementen bestückt wird. Danach wird eine weitere Folie mit niedrigerem Schmelzpunkt auf die Bauelementeseite der ersten Folie aufgebracht und mit dieser verbunden. Durch einen weiteren Prägevorgang werden an dieser zweiten Folie Polymerhöcker als Träger für externe Anschlüsse angeformt. Der Verbundkörper wird danach durch Laserbohren mit Kontaktlöchern zu den Anschlußelementen der Bauelemente und mit Verbindungslöchern zwischen Oberseite und Unterseite des Verbundkörpers versehen; durch eine Metallinierung des Verbundkörpers und anschließende Strukturierung der Oberseite und Unterseite werden wie im vorhergehenden Fall Leiterbahnen zwischen den Anschlußelementen der Bauelemente und den externen Anschlüssen auf den Polymerhöckern hergestellt.In another embodiment the invention two films with different melting points used, initially a first film with a high melting point by embossing one or more recesses for corresponding components provided and then equipped with these components becomes. Then another film with a lower melting point applied to the component side of the first film and with this connected. Through a further stamping process on this second film polymer bump as a carrier for external connections formed. The composite body then becomes the connection elements by laser drilling with contact holes of the components and with connection holes between the top and Underside of the composite body Mistake; through metallization of the composite body and subsequent structuring the top and bottom become conductor tracks as in the previous case between the connection elements of the components and the external connections on the polymer bumps.
Ein nach dem erfindungsgemäßen Verfahren hergestelltes Bauelement-Modul besitzt demnach ein dreidimensional aus Polymermaterial geformtes Substrat, eine auf dem Substrat angeordnete Dielektrikumsschicht und mindestens ein zwischen dem Substrat und der Dielektrikumsschicht angeordnetes elektronisches Bauelement sowie folgende Merkmale:
- – das Substrat besitzt auf seiner Oberseite mindestens eine Vertiefung, in der das Bauelement so positioniert ist, daß seine Anschlüsse nach oben in Richtung der Dielektrikumsschicht weisen,
- – die Dielektrikumsschicht weist jeweils von den Anschlüssen des Bauelements zu ihrer Oberseite sich erstreckende Durchgangslöcher auf,
- – an der Unterseite des Substrats oder an der Oberseite der Dielektrikumsschicht sind Außenkontakt-Höcker aus Polymermaterial angeformt und mit Außenkontakten in Form einer Metallbeschichtung versehen, und
- – auf der Oberseite der Dielektrikumsschicht ist eine Leiterbahnstruktur angeordnet, die leitende Verbindungen zu den Anschlüssen des Bauelementes über die Durchgangslöcher sowie zu den Außenkontakten erzeugen.
- The substrate has at least one recess on its upper side, in which the component is positioned so that its connections point upward in the direction of the dielectric layer,
- The dielectric layer in each case has through holes extending from the connections of the component to the top thereof,
- - On the underside of the substrate or on the top of the dielectric layer, external contact bumps are formed from polymer material and provided with external contacts in the form of a metal coating, and
- - On the top of the dielectric layer, a conductor track structure is arranged, which produce conductive connections to the connections of the component via the through holes and to the external contacts.
Die Außenkontakt-Höcker können an der Unterseite des Substrats angeordnet sein; in diesem Fall gehen die leitenden Verbindungen von der Oberseite der Dielektrikumsschicht über Durchgangslöcher in der Dielektrikumsschicht und in dem Substrat zu den Außenkontakten. Je nach dem verwendeten Herstellungsverfahren kann die Verbindung über eine Durchkontaktierung durch beide Schichten erfolgen; es ist aber auch möglich, getrennte Durchgangslöcher in der Dielektrikumsschicht und in dem Substrat vorzusehen, die dann über eine metallische Schicht auf der Oberseite des Substrats miteinander in Verbindung stehen.The external contact humps can on be arranged on the underside of the substrate; go in this case the conductive connections from the top of the dielectric layer through through holes in the dielectric layer and in the substrate to the external contacts. Depending on the manufacturing process used, the connection can be made via a Plated through through both layers; It is also possible, separate through holes to provide in the dielectric layer and in the substrate, the then over a metallic layer on top of the substrate with each other Connect.
Das Substrat und die Dielektrikumsschicht können durch zwei aufeinandergelegte Folien gebildet werden, wobei die das Substrat bildende erste Folie zunächst verformt wird, um Vertiefungen für ein oder mehrere Bauelemente auszubilden, wobei gleichzeitig an der Unterseite die Außenkontakt-Höcker angeformt werden können. Nach dem Aufbringen der Bauelemente wird dann die zweite Folie aufgelegt und mit der ersten verbunden, wobei dann in der zweiten Folie als Dielektrikumsschicht die Durchgangslöcher erzeugt werden können. In diesem Fall können an der zweiten Folie auch die Außenkontakt-Höcker angeprägt werden, wobei für diesen Fall die erste Folie keine Höcker besitzt. Bei diesem Aufbau muß die zweite Folie einen niedrigeren Schmelzpunkt aufweisen als die erste, damit beim Prägen der zweiten Folie die erste nicht in ihrer Form verändert wird.The substrate and the dielectric layer can be through two superimposed foils are formed, the substrate forming first slide first is deformed to form depressions for to form one or more components, at the same time molded on the underside of the external contact bumps can be. After the components have been applied, the second film is then placed on top and connected to the first, then in the second film as Dielectric layer the through holes can be created. In this case the external contact bumps are also stamped on the second film, being for in this case the first film has no bumps. With this setup must the second film have a lower melting point than the first, with it when embossing the second slide, the shape of the first is not changed.
Die Erfindung wird nachfolgend an Ausführungsbeispielen anhand der Zeichnung näher erläutert. Es zeigen:
-
1A bis1D eine erste Ausführungsform der Erfindung mit einem in mehreren Verfahrensstadien dargestellten Bauelement-Modul, -
2A bis2D eine zweite Ausführungsform der Erfindung mit einem in mehreren Verfahrensstadien gezeigten Bauelementmodul, -
3A bis3D eine dritte Ausführungsform der Erfindung mit einem aus zwei Folien gebildeten Modul in mehreren Verfahrensstadien und -
4A bis4C eine vierte Ausführungsform der Erfindung mit einem aus zwei Folien gebildeten Modul in unterschiedlichen Verfahrensstadien der Herstellung.
-
1A to1D A first embodiment of the invention with a component module shown in several process stages, -
2A to2D 2 shows a second embodiment of the invention with a component module shown in several process stages, -
3A to3D a third embodiment of the invention with a module formed from two films in several process stages and -
4A to4C a fourth embodiment of the inven with a module formed from two foils in different stages of the manufacturing process.
In den
In
In einem nächsten Schritt, der in
In der Dielektrikumsschicht
In den
In
Wie in
In den
Im nächsten Schritt wird die Folie,
welche die Dielektrikumsschicht
Ähnlich
wie im vorherigen Beispiel werden danach das Substrat
In den
Ansonsten werden, wie im vorhergehenden Beispiel,
Durchgangslöcher
Claims (21)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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DE2002125431 DE10225431A1 (en) | 2002-06-07 | 2002-06-07 | Method for connecting electronic components on an insulating substrate and component module produced by the method |
PCT/DE2003/001795 WO2003105222A1 (en) | 2002-06-07 | 2003-06-06 | Method for contact bonding electronic components on an insulating substrate and component module produced according to said method |
AU2003240426A AU2003240426A1 (en) | 2002-06-07 | 2003-06-06 | Method for contact bonding electronic components on an insulating substrate and component module produced according to said method |
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DE2002125431 DE10225431A1 (en) | 2002-06-07 | 2002-06-07 | Method for connecting electronic components on an insulating substrate and component module produced by the method |
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DE10225431A1 true DE10225431A1 (en) | 2004-01-08 |
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DE2002125431 Withdrawn DE10225431A1 (en) | 2002-06-07 | 2002-06-07 | Method for connecting electronic components on an insulating substrate and component module produced by the method |
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DE (1) | DE10225431A1 (en) |
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Cited By (3)
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WO2005029932A1 (en) * | 2003-09-16 | 2005-03-31 | Siemens Aktiengesellschaft | Electronic component, and arrangement comprising an electronic component |
EP1622435A1 (en) * | 2004-07-28 | 2006-02-01 | ATOTECH Deutschland GmbH | Method of manufacturing an electronic circuit assembly using direct write techniques |
DE102004061907A1 (en) * | 2004-12-22 | 2006-07-13 | Siemens Ag | Semiconductor module with low thermal load |
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US8101868B2 (en) | 2005-10-14 | 2012-01-24 | Ibiden Co., Ltd. | Multilayered printed circuit board and method for manufacturing the same |
KR101049390B1 (en) | 2005-12-16 | 2011-07-14 | 이비덴 가부시키가이샤 | Multilayer printed wiring board and its manufacturing method |
US8847376B2 (en) | 2010-07-23 | 2014-09-30 | Tessera, Inc. | Microelectronic elements with post-assembly planarization |
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US5432677A (en) * | 1993-02-09 | 1995-07-11 | Texas Instruments Incorporated | Multi-chip integrated circuit module |
US5745984A (en) * | 1995-07-10 | 1998-05-05 | Martin Marietta Corporation | Method for making an electronic module |
US5875100A (en) * | 1996-05-31 | 1999-02-23 | Nec Corporation | High-density mounting method and structure for electronic circuit board |
EP0782765B1 (en) * | 1994-09-23 | 2000-06-28 | Siemens N.V. | Polymer stud grid array package |
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JPH03297152A (en) * | 1990-04-16 | 1991-12-27 | Hitachi Chem Co Ltd | Manufacture of semiconductor device |
DE10037292A1 (en) * | 2000-07-31 | 2002-02-21 | Siemens Ag | Process for the production of connection substrates for semiconductor components |
DE10059176C2 (en) * | 2000-11-29 | 2002-10-24 | Siemens Ag | Intermediate carrier for a semiconductor module, semiconductor module produced using such an intermediate carrier, and method for producing such a semiconductor module |
DE10059178C2 (en) * | 2000-11-29 | 2002-11-07 | Siemens Production & Logistics | Method for producing semiconductor modules and module produced using the method |
-
2002
- 2002-06-07 DE DE2002125431 patent/DE10225431A1/en not_active Withdrawn
-
2003
- 2003-06-06 WO PCT/DE2003/001795 patent/WO2003105222A1/en not_active Application Discontinuation
- 2003-06-06 AU AU2003240426A patent/AU2003240426A1/en not_active Abandoned
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US5432677A (en) * | 1993-02-09 | 1995-07-11 | Texas Instruments Incorporated | Multi-chip integrated circuit module |
EP0782765B1 (en) * | 1994-09-23 | 2000-06-28 | Siemens N.V. | Polymer stud grid array package |
US5745984A (en) * | 1995-07-10 | 1998-05-05 | Martin Marietta Corporation | Method for making an electronic module |
US5875100A (en) * | 1996-05-31 | 1999-02-23 | Nec Corporation | High-density mounting method and structure for electronic circuit board |
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WO2005029932A1 (en) * | 2003-09-16 | 2005-03-31 | Siemens Aktiengesellschaft | Electronic component, and arrangement comprising an electronic component |
EP1622435A1 (en) * | 2004-07-28 | 2006-02-01 | ATOTECH Deutschland GmbH | Method of manufacturing an electronic circuit assembly using direct write techniques |
WO2006010639A2 (en) * | 2004-07-28 | 2006-02-02 | Atotech Deutschland Gmbh | Method of manufacturing an electronic circuit device through a direct write technique |
WO2006010639A3 (en) * | 2004-07-28 | 2006-10-26 | Atotech Deutschland Gmbh | Method of manufacturing an electronic circuit device through a direct write technique |
DE102004061907A1 (en) * | 2004-12-22 | 2006-07-13 | Siemens Ag | Semiconductor module with low thermal load |
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WO2003105222A1 (en) | 2003-12-18 |
AU2003240426A1 (en) | 2003-12-22 |
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