DE10237338A1 - Production of a rewiring layer on a carrier material - Google Patents
Production of a rewiring layer on a carrier material Download PDFInfo
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- DE10237338A1 DE10237338A1 DE10237338A DE10237338A DE10237338A1 DE 10237338 A1 DE10237338 A1 DE 10237338A1 DE 10237338 A DE10237338 A DE 10237338A DE 10237338 A DE10237338 A DE 10237338A DE 10237338 A1 DE10237338 A1 DE 10237338A1
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- layer
- electrical component
- rewiring
- insulating layer
- rewiring layer
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Abstract
Zur Herstellung eines BGA-Packages werden ein Verdrahtungsträger auf einem Trägermaterial erzeugt, auf den Verdrahtungsträger ein Chip aufgesetzt und das Trägermaterial vom Verdrahtungsträger abgelöst.To produce a BGA package, a wiring carrier is created on a carrier material, a chip is placed on the wiring carrier and the carrier material is detached from the wiring carrier.
Description
BGAs (Ball-Grid-Arrays) stellen die flächenmäßig kleinste Gehäusevariante für Chips dar. Ein Chip oder auch mehrere Chips werden hierbei auf einen Verdrahtungsträger gesetzt und durch bekannte Verfahren wie Flipchip oder Drahtbonden elektrisch kontaktiert. Durch den Verdrahtungsträger erfolgt bei mehreren Chips eine Verdrahtung dieser Chips untereinander sowie bei einem oder mehreren Chips eine Auffächerung der Kontaktpads in ein größeres Raster. Bei einem BGA wird die Kontaktierung des Packages durch Balls auf der Rückseite des Verdrahtungsträgers, auch Interposer genannt, erreicht. Dazu ist es notwendig, eine Durchkontaktierung von einer Seite zur anderen Seite des Verdrahtungsträgers herzustellen. Dies kostengünstig zu realisieren stellt je nach Material des Verdrahtungsträgers ein Problem dar.BGAs (ball grid arrays) provide the smallest in terms of area housing version for chips One or more chips are placed on a wiring carrier and electrically contacted by known methods such as flipchip or wire bonding. Through the wiring support If there are several chips, these chips are wired to one another and in the case of one or more chips, a fanning out of the contact pads in a larger grid. In the case of a BGA, the package is contacted by balls the back the wiring carrier, also called interposer. For this it is necessary to make a via from one side to the other side of the wiring carrier. This is inexpensive Depending on the material of the wiring board, realizing this is a problem represents.
Zur Lösung ist die Verwendung von Interposern auf organischer Basis bekannt. Dies sind spezielle Leiterplatten mit meist mit dem Laser oder mechanisch gebohrten Durchkontaktierungen.The solution is to use Interposers known on an organic basis. These are special circuit boards mostly with laser or mechanically drilled vias.
Weiterhin sind analoge Lösungen bekannt, bei denen der Verdrahtungsträger aus Keramik mit gefüllten Durchkontaktierungen besteht. Solche Verdrahtungsträger existieren sowohl in LTCC (Low Temperature Cofired Ceramic)- als auch in HTCC (High Temperature Cofired Ceramic)-Technologie.Analog solutions are also known for those of the wiring carriers made of ceramic with filled Vias exist. Such wiring carriers exist both in LTCC (Low Temperature Cofired Ceramic) - and in HTCC (High Temperature Cofired Ceramic) technology.
Außerdem ist es bekannt, Leiterbahnen um die Außenkante des Packages zu führen. Dies wird beim sogenannten PSGA (Plastic Stud Grid Array) durch eine relativ komplexe und teuere Laserstrukturierung erreicht. Aufgrund der Komplexität hat sich diese Lösung bisher noch nicht am Markt durchgesetzt.It is also known conductor tracks around the outside edge of the package. This is done with the so-called PSGA (Plastic Stud Grid Array) achieved a relatively complex and expensive laser structuring. by virtue of of complexity has this solution not yet established on the market.
In WO 99/17361 A2 ist eine Sonderlösung beschrieben, bei der ein spezielles Zwischenträgersubstrat mit hoher Verdrahtungsdichte zum Einsatz kommt. Ein Produkt mit dieser Sonderlösung ist bisher nicht bekannt.WO 99/17361 A2 describes a special solution in which a special intermediate carrier substrate with high wiring density is used. A product with this special solution is not yet known.
Schließlich sind sogenannte CSPs (Chip Size Packages) bekannt, bei denen eine Umverdrahtungslage auf dem Chip hergestellt wird.After all, there are so-called CSPs (Chip Size Packages) known in which a rewiring layer is made on the chip.
Davon ausgehend liegt der Erfindung die Aufgabe zugrunde, neue und kostengünstige Möglichkeiten der Verdrahtung von elektronischen Bauelementen, insbesondere Chips, zur Verfügung zu stellen. Dabei soll insbesondere auch dem anhaltenden Trend zur Miniaturisierung Rechnung getragen werden.The invention is based on this based on the task of new and inexpensive ways of wiring of electronic components, in particular chips. In particular, the continuing trend towards miniaturization Be taken into account.
Die Aufgabe wird durch die in den unabhängigen Ansprüchen angegebenen Erfindungen gelöst. Vorteilhafte Ausgestaltungen finden sich in den Unteransprüchen.The task is carried out in the independent claims specified inventions solved. advantageous Refinements can be found in the subclaims.
Hergestellt wird ein Package in Form einer Anordnung mit einem elektrischen Bauelement, insbesondere einem Chip, und einer Umverdrahtungslage für dieses elektrische Bauelement. Dazu wird zunächst die Umverdrahtungslage auf einem Trägermaterial in Form einer Trägerplatte erzeugt. Dann wird das elektrische Bauelement an der Umverdrahtungslage befestigt. Schließlich wird das Trägermaterial von der Umverdrahtungslage entfernt.A package is produced in the form an arrangement with an electrical component, in particular a chip, and a rewiring layer for this electrical component. This will be done first the rewiring layer on a carrier material in the form of a carrier plate generated. Then the electrical component on the rewiring layer attached. Finally becomes the carrier material removed from the rewiring layer.
Der Erfindung liegt der Gedanke zugrunde, die Verdrahtungsschicht in Form der Umverdrahtungslage nicht mehr selbsttragend zu gestalten, sondern die Umverdrahtungslage jeweils vom Trägermaterial und/oder vom elektrischen Bauelement tragen zu lassen. Dadurch kann die Umverdrahtungslage wesentlich dünner und materialsparender realisiert werden als die Verdrahtungsträger nach dem Stand der Technik.The invention is based on the idea that Wiring layer in the form of the rewiring layer no longer self-supporting to design, but the rewiring layer each from the carrier material and / or to be carried by the electrical component. This can realized the rewiring layer much thinner and less material are called the wiring carriers According to the state of the art.
Gegenüber den bekannten CSPs hat das Verfahren den Vorteil, dass sich die Umverdrahtungslage über die Grenzen des Chips hinaus erstrecken kann, womit sich beispielsweise auch neue Möglichkeiten für das Drahtbonden ergeben. Weiterhin wird das elektrische Bauelement nicht dadurch belastet, dass die Umverdrahtung auf ihm hergestellt wird, sondern das Erzeugen der Umverdrahtungslagen erfolgt getrennt vom elektrischen Bauelement auf dem Trägermaterial.Compared to the well known CSPs the method has the advantage that the rewiring layer over the Limits of the chip can extend, for example also new opportunities for the Wire bonding result. Furthermore, the electrical component is not burdened by the fact that the rewiring is made on it, instead, the rewiring layers are generated separately from electrical component on the carrier material.
Auch wenn die Umverdrahtungslage insofern kein Verdrahtungsträger mehr ist, als sie sich nicht unbedingt selbst tragen können muss, so werden bei einem mehrschichtigen Aufbau der Umverdrahtungslage noch isolierende Schichten vorhanden sein, die die eigentliche Verdrahtungsschicht tragen. Insofern kann auch hier noch von einem Verdrahtungsträger gesprochen werden.Even if the rewiring layer so no wiring support is more than it doesn't have to be able to carry itself, so with a multi-layer structure of the rewiring layer there are still insulating layers that make up the actual wiring layer wear. In this respect, one can also speak of a wiring carrier here become.
Im Folgenden wird aufgezeigt, wie eine mehrschichtige Umverdrahtungslage auf dem Trägermaterial angeordnet und dabei erzeugt werden kann.The following shows how a multilayer rewiring layer on the carrier material arranged and can be generated.
Dazu wird zunächst eine isolierende, also dielektrische, Schicht, als eine Schicht der Umverdrahtungslage auf dem Trägermaterial aufgebracht.To do this, first an isolating, ie dielectric, layer, as a layer of the rewiring layer on the carrier material applied.
Vorzugsweise wird danach die erste isolierende Schicht strukturiert, indem zum Beispiel Öffnungen geschaffen werden, die auf das Trägermaterial durchgehen. Der Durchmesser dieser Öffnungen, die später mit Leitermaterial gefüllt werden, über das eine Kontaktierung des Packages erfolgt, kann durch dieses Verfahren extrem klein gehalten werden, etwa weniger als 30 μm, insbesondere weniger als 20 μm. Es können aber auch für BGAs übliche Öffnungsgrößen erzeugt werden, etwa im Bereich von 200 μm.The first is then preferably insulating layer structured by, for example, openings be created that go through on the carrier material. The Diameter of these openings, the later filled with conductor material be about This procedure can be used to contact the package be kept extremely small, approximately less than 30 μm, in particular less than 20 μm. It can but also for BGA's usual opening sizes are generated around 200 μm.
Mit besonderem Vorteil wird dann auf die erste isolierende Schicht eine erste leitende Schicht aufgebracht. Für die leitende Schicht lassen sich leitende Metalle wie etwa Gold (Au), Silber (Ag), Aluminium (Al) oder Kupfer (Cu) sowie Legierungen daraus verwenden. Durch das Verfahren ist aber auch der Einsatz von Platin (Pt) und Platinlegierungen möglich, das bei herkömmlichen Interposern nicht verwendet werden kann.It will then be particularly advantageous a first conductive layer is applied to the first insulating layer. For the conductive layer, conductive metals such as gold (Au), Use silver (Ag), aluminum (Al) or copper (Cu) and alloys made from them. The process also means that platinum (Pt) and Platinum alloys possible, that with conventional Interposers cannot be used.
Auf der ersten isolierenden Schicht und/oder der ersten leitenden Schicht können nun wahlweise weitere Schichten oder beim Einsatz von Luft als Isolator zwischen der ersten leitenden Schicht und dem elektrischen Bauelement direkt das elektrische Bauelement aufgebracht werden. Für eine ausreichende mechanische Stabilität ist es aber ratsam, zunächst zumindest eine zweite isolierende Schicht auf die erste isolierende Schicht und/oder die erste leitende Schicht aufzubringen. Beispielsweise für Kreuzverdrahtungen kann auf der zweiten isolierenden Schicht noch eine zweite leitende Schicht angeordnet werden usw.On the first insulating layer and / or the first conductive layer can now optionally further Layers or when using air as an insulator between the first conductive layer and the electrical component directly the electrical Component are applied. For adequate mechanical stability is advisable, at least at first a second insulating layer on top of the first insulating layer and / or to apply the first conductive layer. For example for cross wiring can have a second conductive layer on the second insulating layer Layer, etc.
Ein entscheidender Vorteil ist, dass bei dieser Vorgehensweise die Dicke einer, mehrerer oder aller isolierenden Schichten jeweils für sich geringer als 20 μm, insbesondere geringer als 10 μm gehalten werden kann. Typische Schichtdicken liegen sogar im Bereich von 5 μm. Dadurch lässt sich ein mehrschichtiger Verdrahtungsträger in Form der Umverdrahtungslage realisieren, dessen Dicke im Bereich von 15 μm und darunter liegt.A key benefit is that with this procedure the thickness of one, several or all insulating Layers each for is less than 20 μm, in particular less than 10 μm can be held. Typical layer thicknesses are even in the range of 5 μm. This leaves a multi-layer wiring carrier in the form of the rewiring layer realize, whose thickness is in the range of 15 microns and below.
Die isolierenden Schichten bestehen vorzugsweise aus BCB oder enthalten dieses zumindest in einem großen Anteil.The insulating layers exist preferably from BCB or at least contain this in a large proportion.
Das elektrische Bauelement wird insbesondere auf die Umverdrahtungslage aufgeklebt. Dabei ist es auch denkbar, dass der Klebstoff die zweite isolierende Schicht ersetzt bzw. diese bildet.The electrical component is particularly glued to the rewiring layer. It is also conceivable that the adhesive replaces the second insulating layer or this forms.
Mit Vorzug wird das elektrische Bauelement an zumindest einer seiner nicht von der Umverdrahtungslage bedeckten Seiten mit einem Schutz versehen, insbesondere an allen seinen nicht von der Umverdrahtungslage bedeckten Seiten. Dies geschieht insbesondere während sich die Umverdrahtungslage und das elektrische Bauelement noch auf dem Trägermaterial befinden. Das elektrische Bauelement kann dazu einfach mit Kunststoff umhüllt werden, wodurch die Anordnung aus elektrischem Bauelement und Umverdrahtungslage wesentlich stabilisiert wird.The electrical component is preferably switched on at least one of its not covered by the rewiring layer Protect sides, especially not all of them sides covered by the rewiring layer. This happens in particular while the rewiring layer and the electrical component are still on the carrier material are located. The electrical component can be easily done with plastic wrapped be, whereby the arrangement of electrical component and rewiring layer is substantially stabilized.
Dies ist insbesondere für den Fall besonders vorteilhaft, in dem die Umverdrahtungslage sich seitlich über das elektrische Bauelement hinaus erstreckt. Hier fungiert der Schutz an den nicht von der Umverdrahtungslage bedeckten aber dieser benachbarten Seiten des elektrischen Bauelements als mechanischer Träger für die über das elektrische Bauelement hinausragenden Bereiche der Umverdrahtungslage.This is especially the case particularly advantageous in which the rewiring layer is laterally over the extends electrical component beyond. Protection works here on the neighboring ones not covered by the rewiring layer Sides of the electrical component as a mechanical support for the electrical component protruding areas of the rewiring layer.
Die Umverdrahtungslage wird auf ihrer einen Seite elektrisch mit dem elektrischen Bauelement kontaktiert. Auf der gegenüberliegenden Seite, also an den dem elektrischen Bauelement abgewandten Kontakten der Umverdrahtungslage werden vorzugsweise Lotkugeln angeordnet, nachdem das Trägermaterial entfernt ist. Bei wenigen großen Kontakten auf der Unterseite, sogenannten SMD-Pads, genügt das Lotangebot, das von der Boardseite kommt. In diesem Fall kann also auf Lotkugeln verzichtet werden.The rewiring layer will be on yours one side electrically contacted with the electrical component. On the opposite Side, i.e. on the contacts facing away from the electrical component solder balls are preferably arranged in the rewiring layer, after the backing material is removed. With a few big ones Contacts on the underside, so-called SMD pads, the solder offer is sufficient, that comes from the board side. In this case, solder balls can be used to be dispensed with.
Das elektrische Bauelement kann über Drahtbonden mit der Umverdrahtungslage verbunden werden und/oder im Flipchip-Verfahren, bei dem die Kontakte des Bauelements direkt mit Kontakten der Umverdrahtungslage verlötet werden.The electrical component can be wire bonded be connected to the rewiring layer and / or in the flip-chip method, in which the Contacts of the component directly with contacts of the rewiring layer soldered become.
Das Entfernen des Trägermaterials kann durch mechanisches oder chemisches Abtragen erfolgen. Ein Wegätzen hat sich als besonders praktikabel herausgestellt.The removal of the carrier material can be done by mechanical or chemical removal. Has an etching away turned out to be particularly practical.
Eine Anordnung, die nach dem vorgenannten Verfahren hergestellt ist, lässt sich von anderen Anordnungen aus elektrischem Bauelement und Umverdrahtungslage beispielsweise dadurch unterscheiden, dass sich die Umverdrahtungslage seitlich über den Chip hinaus erstreckt und zumindest eine isolierende Schicht weniger als 20 μm, insbesondere weniger als 10 μm dick ist.An arrangement according to the above Process is made different arrangements of electrical component and rewiring layer differ, for example, in that the rewiring layer sideways over extends the chip and at least one insulating layer less than 20 μm, in particular less than 10 μm is thick.
Weitere oder alternative Besonderheiten einer solchen Anordnung bestehen darin, dass eine isolierende Schicht BCB enthalten und/oder daraus bestehen kann und/oder dass eine leitende Schicht Platin enthalten und/oder daraus bestehen kann.Other or alternative special features Such an arrangement consists of an insulating layer BCB contain and / or may consist of and / or that a senior Layer contain platinum and / or can consist of.
Weitere wesentliche Vorteile und Merkmale der Erfindung ergeben sich aus der Beschreibung zweier Ausführungsbeispiele anhand der Zeichnung. Dabei zeigtOther essential advantages and Features of the invention result from the description of two embodiments based on the drawing. It shows
Auf einem in
Auf der ersten isolierenden Schicht
wird durch Abscheiden und Strukturieren eine erste leitende Schicht
Darauf wird analog zur ersten isolierenden Schicht
Danach wird ein elektrisches Bauelement
Das Bauelement
Danach werden das Bauelement
Nachdem so die Umverdrahtungslage
Schließlich werden Lotkugeln
Mit Bezug auf
Danach wird eine erste isolierende
Schicht
Darauf wird eine erste leitende Schicht
Darauf wird eine zweite isolierende
Schicht
Nun wird dieser Aufbau mit einem
elektrischen Bauelement
Jetzt lassen sich die Felder zwischen
dem Abstandsgitter mit Kunststoff
Danach wird das Trägermaterial
in Form des in
Weiterhin wird die Barriereschicht
aus SiO2 geätzt, womit die Aluminiumpads
der ersten leitenden Schicht
Auf diese freigelegten Aluminiumpads
werden nun durch ein außenstromloses
Verfahren Nickel (Ni) und Gold (Au) 210 abgeschieden. Auf das Nickel und
Gold
Schließlich werden die BGA-Packages
in einem Sägeprozess
durch Aussägen
des schraffierten Bereiches
Insgesamt lässt sich das Verfahren auch so beschreiben, dass zur Entflechtung auf einem Trägermaterial in Form eines Trägersubstrats mindestens eine planare Verdrahtungslage aufgebracht, der Chip oder die Chips aufgesetzt, kontaktiert und durch einen Kunststoff oder eine sonstige geeignete Schutzmasse umhüllt und so mechanisch stabilisiert werden. Anschließend wird das Trägersubstrat abgelöst oder aufgelöst. Damit entfallen alle Prozessschritte zur Schaffung einer geeigneten Durchkontaktierung. Der Interposer besteht nur noch aus einer sehr dünnen, ein- oder mehrlagigen Verdrahtung.Overall, the process can also be so describe that for unbundling on a substrate in the form of a carrier substrate applied at least one planar wiring layer, the chip or the chips put on, contacted and through a plastic or another suitable protective mass is encased and thus mechanically stabilized. Subsequently becomes the carrier substrate superseded or dissolved. This eliminates all process steps to create a suitable one Via. The interposer consists of only one thin, single or multi-layer wiring.
Es ergibt sich so eine besonders
kostengünstige
Herstellung, da die Durchkontaktierungsprozesse entfallen. Zudem
wird auf größeren Trägersubstraten
gearbeitet, womit in wenigen Prozessschritten viele BGA-Packages
gleichzeitig hergestellt werden können. Bei bestimmten Prozesskombinationen,
wie etwa im zu
Darüber hinaus weist das Verfahren den Vorteil auf, dass bei Verdrahtungstechnologien mit sehr feinen Strukturen, beispielsweise der Dünnfilmtechnik, mit sehr glatten Substraten gearbeitet werden kann. Hier kommen insbesondere Glas, Silizium oder Metalle wie Aluminium oder Kupfer in Frage. Für diese Substratmaterialien gibt es derzeit kein fertigungsgerechtes, kostengünstiges Verfahren um Durchkontaktierungen herzustellen. BGA-Packages konnten bei Verwendung derartiger Trägermaterialien daher bislang nicht in größeren Stückzahlen realisiert werden.In addition, the procedure points the advantage that with wiring technologies with very fine Structures, for example thin film technology, can be used with very smooth substrates. Come here in particular glass, silicon or metals such as aluminum or copper in question. For these substrate materials are currently not suitable for production, cost-effective Process to produce vias. BGA packages were able to Use of such carrier materials therefore so far not in large numbers will be realized.
Durch das Verfahren und die daraus resultierenden Erzeugnisse wird die Package-Bauhöhe der Konstruktion deutlich verringert.Through the process and from it resulting products, the package height of the construction becomes clear reduced.
Schließlich ist das thermische Verhalten des Packages sehr robust, da die dünne, elastische Verdrahtungslage keine Kräfte auf die Chips ausüben kann. Bei den bisherigen Lösungen ist dagegen der Bimetalleffekt von Chip (Silizium, 2 ppm/K) und organischem Interposer (11 bis 18 ppm/K) störend.Finally, the thermal behavior of the package is very robust because of the thin, elastic wiring layer no powers can exercise on the chips. With previous solutions is the bimetal effect of chip (silicon, 2 ppm / K) and organic interposer (11 to 18 ppm / K) disturbing.
Claims (18)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10237338A DE10237338A1 (en) | 2002-08-14 | 2002-08-14 | Production of a rewiring layer on a carrier material |
PCT/DE2003/002265 WO2004021431A1 (en) | 2002-08-14 | 2003-07-07 | Production of a rewiring layer on a supporting material |
AU2003250299A AU2003250299A1 (en) | 2002-08-14 | 2003-07-07 | Production of a rewiring layer on a supporting material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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DE10237338A DE10237338A1 (en) | 2002-08-14 | 2002-08-14 | Production of a rewiring layer on a carrier material |
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DE10237338A1 true DE10237338A1 (en) | 2004-03-11 |
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DE10237338A Withdrawn DE10237338A1 (en) | 2002-08-14 | 2002-08-14 | Production of a rewiring layer on a carrier material |
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AU (1) | AU2003250299A1 (en) |
DE (1) | DE10237338A1 (en) |
WO (1) | WO2004021431A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102004015546A1 (en) * | 2004-03-30 | 2005-10-20 | Infineon Technologies Ag | Semiconductor chip for security-relevant applications with integrated circuit has light-sensitive state change device that alters state stored in state storage device when light incident and stored state monitoring device |
Families Citing this family (1)
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US7198965B2 (en) * | 2002-11-06 | 2007-04-03 | Irvine Sensors Corp. | Method for making a neo-layer comprising embedded discrete components |
Citations (4)
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US5200362A (en) * | 1989-09-06 | 1993-04-06 | Motorola, Inc. | Method of attaching conductive traces to an encapsulated semiconductor die using a removable transfer film |
US5745984A (en) * | 1995-07-10 | 1998-05-05 | Martin Marietta Corporation | Method for making an electronic module |
JP2000124704A (en) * | 1998-10-12 | 2000-04-28 | Matsushita Commun Ind Co Ltd | Millimeter wave module |
US20010023532A1 (en) * | 2000-03-22 | 2001-09-27 | Hirofumi Fujii | Method for producing multilayer circuit board |
Family Cites Families (2)
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FR2736206B1 (en) * | 1995-06-30 | 1997-08-08 | Commissariat Energie Atomique | METHOD FOR PRODUCING AN INTERCONNECTION SUBSTRATE FOR CONNECTING A CHIP TO A RECEIVING SUBSTRATE |
JP2002110717A (en) * | 2000-10-02 | 2002-04-12 | Sanyo Electric Co Ltd | Manufacturing method of circuit device |
-
2002
- 2002-08-14 DE DE10237338A patent/DE10237338A1/en not_active Withdrawn
-
2003
- 2003-07-07 AU AU2003250299A patent/AU2003250299A1/en not_active Abandoned
- 2003-07-07 WO PCT/DE2003/002265 patent/WO2004021431A1/en not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5200362A (en) * | 1989-09-06 | 1993-04-06 | Motorola, Inc. | Method of attaching conductive traces to an encapsulated semiconductor die using a removable transfer film |
US5745984A (en) * | 1995-07-10 | 1998-05-05 | Martin Marietta Corporation | Method for making an electronic module |
JP2000124704A (en) * | 1998-10-12 | 2000-04-28 | Matsushita Commun Ind Co Ltd | Millimeter wave module |
US20010023532A1 (en) * | 2000-03-22 | 2001-09-27 | Hirofumi Fujii | Method for producing multilayer circuit board |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004015546A1 (en) * | 2004-03-30 | 2005-10-20 | Infineon Technologies Ag | Semiconductor chip for security-relevant applications with integrated circuit has light-sensitive state change device that alters state stored in state storage device when light incident and stored state monitoring device |
DE102004015546B4 (en) * | 2004-03-30 | 2011-05-12 | Infineon Technologies Ag | An integrated circuit semiconductor chip and method for securing a semiconductor integrated circuit |
Also Published As
Publication number | Publication date |
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WO2004021431A1 (en) | 2004-03-11 |
AU2003250299A1 (en) | 2004-03-19 |
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