DE10314602B4 - Integrated differential magnetic field sensor - Google Patents

Abstract

Magnetic field sensor device (10; 30; 50; 70; 90) for detecting a magnetic field, having the following features:
a one-piece substrate (12) having a first magnetic field sensor element (14) integrated in the substrate (12) for detecting a first static magnetic field component (H ₁ ) acting perpendicular to the substrate (12) and a second one into the substrate (12) 12) integrated magnetic field sensor element (16) for detecting a perpendicular to the substrate (12) acting second static magnetic field component (H ₂ ),
wherein said first magnetic field sensor element (14) and said second magnetic field sensor element (16) are spaced from each other by a predetermined distance A, said predetermined distance A being set such that said first and second magnetic field components (H ₁ , H ₂ ) are opposite to each other, and
a magnetic field alignment arrangement (18; 32; 74) for aligning the first and second magnetic field components (H ₁ , H ₂ ) to be detected with respect to the first and second magnetic field sensor elements (14, 16), the magnetic field alignment arrangement (18; 32; 74) forming a layer a permeable material that covers both magnetic field sensor elements (14, 16), parallel to each other.

Description

The The present invention relates to magnetic field sensor devices, and in particular monolithically integrable, differential Magnetic field sensor devices which are arranged vertically to the magnetic field components acting perpendicular to the magnetic field sensor device of a static or dynamic magnetic field.

vertical Magnetic sensor devices and their housing are generally made as thin as possible, so that the magnetic sensor device in as narrow as possible air gap a magnetic circuit can be installed, thus a maximum to achieve magnetic sensitivity of the magnetic sensor device. The narrower the air gap of a magnetic circuit can, the more homogeneous and stronger is the magnetic field present in the air gap.

Under Vertical magnetic sensor devices become such arrangements understood that the perpendicular to the plane of the integrated circuit (IC, IC = integrated circuit) detect effective magnetic field components, the level of the integrated circuit through the plane of a scale, active semiconductor region of the integrated circuit, with the is traversed to be detected magnetic field is predetermined.

at Magnetic sensor devices must now be between so-called Absolute value sensor devices and differential sensor devices differ, as in the aforementioned sensor devices greatly different conditions to be observed.

So a differential sensor device has at least two elementary sensor elements at different locations on the semiconductor integrated circuit and processes the difference values of the two sensor elements detected magnetic field components. This approach has proven to be particularly resistant to interference proved, because usual, in practice occurring interference fields are re the integrated circuit is usually arranged homogeneously, so that their difference on two sensor elements on the semiconductor integrated circuit often picks.

It It should be obvious that, of course, with two absolute value sensor devices build a sensor system, with which a difference measurement can be performed. However, this is beside the two absolute value sensor devices still an evaluation ASIC (ASIC = application specific integrated circuit = application specific integrated circuit), which is provided to the To process output signals of the two absolute value sensor devices, d. H. for example, to form their difference, amplify, etc. Therefore a sensor system consisting of two absolute value sensor devices and an evaluation ASIC three individual housings as well as a costly one carrier board and their wiring, as well as costly testing and matching the module is required, such arrangements are relatively expensive and thus expensive to manufacture.

In In practice, in addition to the cost issue but also that Problem that the two absolute value sensor devices have a bad "mating tolerance" (matching), since the two absolute value sensor devices generally not come from the same production and assembly. Furthermore, it should be noted be that a sensor system consisting of two absolute value sensor devices also regarding her Position to each other have significant tolerances, since the position an integrated circuit and thus the active semiconductor region for detecting the effective magnetic field component within it housing not very well defined. For that reason, both must Absolute value sensor devices can only be suitably adjusted which is usually very expensive This is especially true when their temperature coefficients have to be reconciled first.

at a known in the prior art construction of a current sensor (US-2002/0024333 A1) is a double-slotted soft magnetic circuit formed wherein in each case an absolute value sensor is positioned in the two slots is. About that In addition, the soft magnetic circuit becomes a primary current conductor passed, which defines the magnetic excitation. In the two air gaps occur magnetic fields proportional to the excitation, so the Primary current, which causes this primary current contactless can be measured by means of the two absolute value sensor devices.

A disadvantage of this illustrated sensor arrangement is that this sensor arrangement can only be integrated in the form of a relatively complex and complicated to manufacture microsystem, whereby such a Sen soranordnung is not monolithically integrated, but with individual components consisting for example of primary conductor, integrated circuit chip, magnetic circuit, etc. is to build, and this is only possible for a predetermined nominal current range, since the rated current range of the current sensor shown over the gap width set or predetermined.

It It is also clear that with the known current sensor, when this is integrated into a microsystem, only possible use fixed conductor cross sections or conductor geometries to be able to so that it is not possible is to provide a standardized current sensor arrangement, be used with the differently shaped conductor can. Thus, this current sensor shows extremely low flexibility with respect to different ones Conductor cross sections and conductor geometries.

In the scientific publication "Design of planar magnetic concentrators for high-sensitivity Hall devices ", by Drljaca, Vincent, Besse et Popovic, Sensor and Actuators A97-98 (2002) 10-14 shown that soft magnetic layers of highly permeable amorphous alloys on the surface of an integrated circuit can be positioned. The structures shown in said scientific publication but are at least in two parts, the magnetic field sensor devices between or directly below the facing edges of two Magnetic field concentrators are. In addition, the illustrated serve Magnetic field concentrators to an external magnetic field, the parallel to the chip surface runs, into a magnetic stray field between the two magnetic field concentrators, this is roughly circular Having field lines in the volume of the magnetic field sensor devices. This is to be achieved that cylindrical Hall sensors or but also conventional Hall sensors that detect a vertical magnetic field component, can be used.

In the scientific publication "CMOS planar 2D micro-fluxgate sensor ", by Chiesi, Krejik, Janossy et Popovic, Sensors and Actuators 82 (2000) 174-180, becomes a ferromagnetic structure of an amorphous alloy applied to a semiconductor chip in the form of a cross, to form a so-called fluxgate sensor. For the functional principle of a Fluxgate sensors require a non-linear magnetic Material that during the operation of the fluxgate sensor at times, d. H. pulsed, in the saturation is driven to use. The mentioned in the scientific publication Fluxgate sensor shown does not include a magnetic field sensor device, but only excitation and pickup coils. It becomes clear that with these pickup coils only temporal changes of the magnetic flux can be detected as an inductive (induced) voltage whose Size through the rate of change the magnetic flux is determined. A static field changes the working point of the permeable material on the hysteresis characteristic BRA). Overlay the excitation coils a temporally variable one Field. If the operating point, e.g. due to a positive external field, to positive values of the B (H) characteristic, then the superimposed Exciter induction at positive peaks due to saturation of the permeable core cut off, while the negative peaks remain unaffected. So in the pickup coils is an AC signal induced in which the positive peaks are cut off. You form the time average, so this is less than zero, because less positive shares are included as negative. The stronger that external magnetic field, the stronger The positive tips are cut off and the stronger it gets the time average negative.

The EP 1 182 461 A2 relates to a sensor for detecting the direction of a magnetic field. This sensor comprises a magnetic field concentrator with a planar shape and at least two Hall elements, wherein the Hall elements are arranged in the region of the edge of the magnetic field concentrator. In this case, the magnetic field concentrator changes the course of the field lines of the magnetic field of a permanent magnet, which rotates about its axis of rotation, and in particular causes a part of the field lines, which would be parallel to the surface of the Hall elements in the absence of the magnetic field concentrator, to deflect the Hall signals. Elements penetrates approximately perpendicular to their surface. The arrangement thus forms an angle sensor with respect to the position of the rotatable permanent magnet.

outgoing from this prior art, the object of the present Invention therein, an improved magnetic field sensor device for To create a magnetic field that can be monolithically integrated is and with the static or dynamic magnetic field differentially is detectable.

These Task is by a magnetic field sensor device for detection a magnetic field according to claim 1 solved. Advantageous developments of the invention are the subject of the dependent claims.

The Magnetic field sensor device according to the invention for detecting a magnetic field comprises a one-piece substrate with a first magnetic field sensor element integrated into the substrate for detecting a vertically acting on the substrate, first static magnetic field component, and with a second, into the substrate integrated magnetic field sensor element for detecting a vertical acting on the substrate, second static magnetic field component, wherein the first magnetic field sensor element and the second magnetic field sensor element spaced from each other by a predetermined distance, wherein the predetermined distance is set so that the first and the second magnetic field component are opposite to each other entge, and further a magnetic field alignment assembly for aligning to be detected first and second magnetic field component with respect to first and second magnetic field sensor elements, wherein the magnetic field alignment arrangement has a layer of a permeable material that covers both magnetic field sensor elements, is arranged parallel to the substrate and has a thickness of more than 50 μm, wherein the magnetic field alignment assembly is a permeable material and is formed so that one through the first and second magnetic field component caused magnetic induction in the Magnetic field alignment arrangement lower than the saturation induction in the permeable material.

Of the The present invention is based on the recognition, a monolithic integrable, differential magnetic field detection device to create a one-piece, permeable layer parallel to the magnetic field sensor elements integrated in a semiconductor substrate the magnetic field detection device is arranged, wherein the permeable Layer as a one-piece magnetic field concentration device for aligning and / or concentrating the magnetic field components in terms of the integrated magnetic field sensor elements is effective.

Around the invention, monolithic integrable, differential magnetic field detection arrangement with one possible small air gap, in which the integrated magnetic field sensor elements the magnetic field detection device for detecting the perpendicular magnetic field components acting on the magnetic field sensor elements are arranged, a magnetic short circuit by means of a highly permeable (soft magnetic) material directly into the casing the magnetic field detection device installed. This is suitable For example, a layer of a permeable material with the IC package the integrated magnetic field sensor arrangement is connected, or also the lead frame of the magnetic field sensor assembly itself, instead of the usual Copper alloys of a permeable material, e.g. MU-metal or permalloy is.

The electric conductivity These permeable materials, for example, instead of the usual materials for the connection cable frame It is good enough to use it as a lead frame to be able to use at the same time the magnetic field lines of the magnetic to be detected Field as possible steep or as possible perpendicular to the chip plane with the active semiconductor regions For detecting the magnetic field forced or aligned. By the arrangement according to the invention let yourself the output of the magnetic field detecting device using For example, conventional Hall sensor elements that only magnetic field components react perpendicular to the chip plane, or MAG-FETs (magnetic field-effect transistors) maximize. The steeper the magnetic field components the magnetic field sensor elements penetrate, the higher is the effective portion of the detectable magnetic field, resulting in also a higher one Output of the magnetic field sensor elements results. Corresponding elevated also the sensitivity of the arrangement.

The integrated, Differential magnetic field sensor arrangement can be in particular advantageous as a current sensor, d. H. to capture the current in one electrical conductor, use. The integrable, but differential magnetic field sensor arrangement can be equally well in other magnetic field sensing applications, e.g. as speed or rotation angle sensor device in conjunction with a pole wheel.

It It is clear that the differential, integrated Magnetic field sensor assembly substantially for all magnetic field sensing applications can be used, where either static or dynamic Magnetic fields can be detected.

there characterized the integrated differential magnetic field sensor arrangement according to the present invention on the one hand by an increased Sensitivity in the detection of magnetic fields, as the For example, permeable material (e.g., soft iron material) used magnetic Induction in the narrow "air gap" of the magnetic field sensor arrangement bundles. In the air gap can the magnetic field components through the magnetic field sensor elements, e.g. Hall probe elements or MAG-FETs, be measured with a high sensitivity.

Further the integrated, Differential magnetic field sensor device by a great flexibility in terms of Measuring system off. For The case of use as a current measuring device can be with the Magnetic field sensor arrangement according to the invention a current flow and thus the current through substantially any Detect conductors with almost any conductor cross-sectional area. That's it due to the one-piece permeable layer, which is parallel to the surface the integrated circuit and thus to the active sensor elements is arranged, extremely advantageous that the cross section of the primary conductor, whose current flow is to be detected, essentially arbitrary made big can be, without thereby a larger air gap in the magnetic field sensor arrangement to have to accept. An enlarged air gap, the by the inventive arrangement would be avoided but again to a reduction in the sensitivity of the arrangement to lead. For this reason, one can in the present invention, the primary conductor perpendicular to the chip surface extend the magnetic field sensor arrangement substantially arbitrarily.

preferred embodiments The present invention will be described below with reference to FIG the enclosed drawings closer explained. Show it:

1 a first possible implementation of an integrated, differential magnetic field sensor arrangement according to a first preferred embodiment of the present invention;

2 another possible implementation of an integrated, differential magnetic field sensor arrangement according to another embodiment of the present invention;

3 another possible implementation of an integrated, differential magnetic field sensor arrangement according to another embodiment of the present invention;

4 another possible implementation of an integrated, differential magnetic field sensor arrangement according to another embodiment of the present invention;

5a B further possible implementations of an integrated, differential magnetic field sensor arrangement according to a further exemplary embodiment of the present invention; and

6a -B a basic comparison of the magnetic properties of soft magnetic (permeable) and hard magnetic materials in the form of schematic magnetization characteristics (hysteresis loops).

In order to facilitate the understanding of the following detailed description of the various preferred embodiments of the monolithically integrable differential magnetic field sensor assembly according to the present invention, the difference between soft magnetic and hard magnetic materials will be briefly discussed below, and discussed with reference to the so-called hysteresis loop in 6a -B is shown in principle. In this case, the induction values B and above the abscissa the field strength values H are plotted in the magnetization characteristic over the orinate.

The hysteresis loop is a special type of magnetization curve of ferromagnetic substances. After magnetizing the initially nonmagnetic substance up to a maximum value of the polarization (new curve), two different induction values result for each field strength value, depending on whether it was passed through rising or falling. Without an existing magnetic field (H = 0), one obtains a residual induction B _R, which is referred to as so-called remanence. The coercive field strength H _C is the field strength at which the induction becomes zero (B = 0). Substances with a small coercivity H _C are called magnetically soft, their hysteresis loop is narrow, as in 6a shown. On the other hand, magnetically hard substances have a high coercive force H _C , the hysteresis loop is wide, as in 6b shown.

Becomes now, for example, a hard magnetic material in a strong Magnetic field brought and then brought back into a magnetic "zero field", so is the hard magnetic material is then magnetized, d. H. the hard magnetic Material acts like a permanent magnet.

On the other hand, a soft magnetic material is scarcely changed by a previously applied strong magnetic field. In particular, for example, any soft magnetic material experiences inhomogeneous Magnetic field an attractive force, such as cast iron is attracted by a bar magnet.

soft magnetic Materials are highly permeable materials, d. H. these materials have a very high relative permeability μr, i. H. μr »1. Hard magnetic In contrast, materials are generally poorly permeable, i. H. for this Materials are usually μr ≌ 1.

This can be easily determined by the magnetization characteristics of 6a -B, ie the induction B with respect to the magnetic field H, interpret. Hard magnetic materials have a hysteresis profile that includes a large area, whereas soft magnetic materials have a slender hysteresis profile that includes a relatively small area. If the magnetic excitation, ie the magnetic field H, is switched off, a remanent induction B _R (remanence) sets in. The slope of the B (H) curve at this point represents the effective permeability of the material. For soft magnetic materials, the slope is relatively steep, with hard magnetic materials, it is relatively flat.

typical Soft magnetic materials are nickel (Ni) and permalloy (NiFe). Iron is in the annealed state a soft magnet, but rolled to permanent magnet.

It will be appreciated that soft magnetic and hard magnetic materials differ substantially not so much in remanence but rather in coercive force H _C , for which B (H _C ) = 0.

is the coercive field strength of the respective material big, so the hysteresis loop is wide and it is a hard magnetic Material (around a hard magnet). The remanence of a soft magnet can in certain circumstances also be very tall the remanence being due to mechanical stresses in the material can be influenced. The remanence of nickel increases, for example, with a rising Tensile stress in the direction of magnetization, whereas those of permalloy to.

at The present invention should be directed to the magnetic field alignment arrangement note that the magnetic field alignment arrangement is in the essentially exclusively on the use of soft magnetic, high permeability materials for the production of magnetic field concentration devices for integrated Relates circuits containing magnetic field sensor elements.

In the following, reference will now be made to 1 a first preferred embodiment of a magnetic field sensor device 10 described according to the present invention.

The magnetic field sensor device of 1 has a one-piece substrate 12 on, wherein in the substrate 12 a first and a second magnetic field sensor element 14 . 16 are arranged at a predetermined distance A preferably symmetrical to an axis of symmetry of the substrate and / or the lead frame (leadframe). On the semiconductor substrate 12 with the magnetic field sensor elements 14 . 16 is a layer 18 made of a soft magnetic (permeable) material, wherein, as in 1 is shown, for example, an adhesive layer 20 for mechanical connection of the semiconductor substrate 12 with the permeable layer 18 is provided. As in 1 is further shown, the magnetic field sensor device consisting of the substrate 12 with the magnetic field sensor elements 14 . 16 and the soft magnetic layer 18 on a conventional (non-magnetic) lead frame 22 be arranged, wherein the lead frame 22 for example by means of a hard or soft solder layer 24 with the magnetic field sensor device 10 can be connected.

In the 1 shown magnetic field sensor device can now, for example, after a connection contact of the integrated circuit 12 for example, by means of bonding wires (not shown) with the lead frame 22 with a potting compound 26 be provided, which is then effective, for example, as a sensor housing, and by the dashed circumferential line 26 schematically in 1 is shown.

In the following the functionality of the in 1 illustrated magnetic field sensor device according to the invention 10 explained.

As in 1 is shown, is the substrate 12 the magnetic field sensor device 10 preferably made in one piece, wherein the first, in the substrate 12 integrated magnetic field sensor element 14 for detecting a perpendicular to the first magnetic field sensor element 14 acting, first (static or dynamic) magnetic field component H _{1 is} provided, and the second, in the substrate 12 integrated magnetic field sensor element 14 for detecting a perpendicular to the second magnetic field sensor element 14 acting, second sta magnetic field component H _{2 is} provided, wherein the first magnetic field sensor element 14 and the second magnetic field sensor element 16 are spaced from each other by the predetermined distance A. The predetermined distance A is preferably set so that the first and the second magnetic field component H ₁ , H ₂ penetrate as steep as possible and ideally perpendicular to the magnetic field sensor elements, so that the magnetic field components H ₁ , H ₂ in the ideal case parallel but opposite to each other, such as this in 1 is shown by way of example.

This alignment of the first and second magnetic field component H ₁ , H ₂ to each other, ie, as the two magnetic field components H ₁ , H _2, the substrate 12 is penetrated mainly by the soft magnetic layer 18 which functions as a so-called magnetic field alignment arrangement for aligning the first and second magnetic field components H ₁ , H ₂ to be detected with respect to the first and second magnetic field sensor elements 14 . 16 is provided. As already stated, the magnetic field alignment arrangement 18 preferably a layer of a permeable material, both magnetic field sensor elements ( 14 . 16 ) and parallel to the substrate ( 12 ) is arranged.

The term "covered" in the context of the present invention is intended to mean that the layer 18 made of a permeable material attached to the substrate 12 below (or above) and parallel to the magnetic field sensor elements 14 . 16 is arranged, preferably has a lateral extent, which corresponds at least to the substrate plane perpendicular projection of the mutually remote sides of the magnetic field sensor elements, so that as many as possible or all magnetic field lines, the magnetic field sensor elements 14 . 16 penetrate, even in the layer 18 reach.

It becomes clear that the substrate 12 preferably a one-piece substrate made of a semiconductor material, wherein the first and the second magnetic field sensor element 14 . 18 by a first and second active semiconductor region in the substrate 12 are defined. The active semiconductor region can be, for example, an integrated, flat Hall region or also an integrated gate region of a MAG FET, wherein in the context of the present invention, any semiconductor-based magnetic field sensor elements for detecting the vertical components of the magnetic field components H ₁ , H ₂ can be used.

As in 1 is the soft magnetic (permeable) layer 18 preferably in the region of the so-called chip island of the lead frame 22 formed, wherein the chip island of the lead frame 22 the area on the lead frame 22 indicates on which the substrate 12 is located after a mechanical attachment and, for example, by means of bonding with predetermined areas, eg different pins (pins), the lead frame 22 connected is. The magnetic field alignment device in the form of the soft magnetic layer 18 is designed to conduct the magnetic field components suitable and also to bundle, so that the first magnetic field component H ₁ as steep as possible or as perpendicular to the first magnetic field sensor element 14 and the second magnetic field component H ₂ as steep as possible or as perpendicular to the second magnetic field sensor element 16 to align and preferably also to concentrate, thereby increasing the magnetic flux density by the magnetic field sensor elements 14 . 18 to reach. As a result, the effective (vertical) portion of the magnetic field components to be detected is increased, whereby the sensitivity of the entire magnetic field detection arrangement is increased.

The soft magnetic layer 18 from 1 According to the invention, it is preferably made of a material which on the one hand has the highest possible relative permeability μr (μr »1, μr ≌ 1,000-200,000) and, on the other hand, the smallest possible magnetic hysteresis (coercive force, eg H _C ≌ 0.01 A / cm ) having. As in 1 is shown containing the substrate 12 , which is preferably a substrate of an integrated circuit, two magnetic field sensor elements 14 . 16 , which are designed for example as conventional Hall sensor elements or MAG-FETs, wherein the magnetic field sensor elements 14 . 16 each provide an output signal monotonically increases with that component of the magnetic flux density which impinges perpendicular to the substrate surface. The output signals are sent, for example, to a signal processing device (not shown in FIG 1 ), which also on the substrate 12 can be integrated or arranged, supplied for further processing. When the first magnetic field sensor element 14 , For example, a first Hall probe, for example, provides a positive output voltage, so provides the second magnetic field sensor element 16 , For example, a second Hall probe, a corresponding, negative output voltage, since the first and second magnetic field sensor element 14 . 16 are performed substantially identical and the first and second magnetic field component H ₁ , H _2, the first and second magnetic field sensor element 14 . 16 penetrate opposite.

By means of the further signal processing device, that of the magnetic field sensor device 10 is assigned, the Dif is difference of these two output signals of the first and second magnetic field sensor element 14 . 16 this advantageously corresponds to a doubling of the output signal of a single magnetic field sensor element. It should of course be obvious that the first and second magnetic field sensor element 14 . 16 can also be connected so that the same effect with respect to the output voltages by means of an addition of the individual output voltages of the magnetic field sensor elements 14 . 16 is reached.

Furthermore, it should be noted that in practice often unfavorable homogeneous background or disturbing magnetic fields on the magnetic field sensor elements 14 . 16 Act. However, these disturbing magnetic fields generally generate in both magnetic field sensor elements 14 . 16 Output interference signals with the same polarity. For this reason, it is achieved that these interspersed interference signals in the course of further signal processing of the output signals of the magnetic field sensor elements 14 . 16 essentially cancel as a result of the difference. If the two magnetic field sensor elements 14 . 16 are so interconnected that the output signals are added, the interference fields produce output signals of opposite polarity, so that addition of the output signals results in cancellation of these interfering signals in the total added output signal.

This differential principle described above in detail for operating the magnetic field sensor device according to the invention 10 thus realizes a very effective suppression of interference fields.

In the 1 illustrated vertical, integrated, differential magnetic field detection device according to the invention 10 in the case 26 is housed and a non-magnetic (conventional) lead frame 22 and the additional permeable layer 18 which functions as a magnetic field alignment device has a number of advantages. Thus, the thickness of the soft magnetic layer 18 , which is designed for example by a soft iron sheet, regardless of the thickness of the lead frame 22 to get voted. If the soft magnetic layer 18 For example, in the form of a soft iron sheet has a significant thickness of, for example, more than 50 microns, the layer 18 by means of gluing or soldering in a first step on the lead frame 22 be applied. Only then does the substrate become 12 with the active magnetic field sensor elements 14 . 16 and an optional evaluation circuit (not shown in FIG 1 ) attached to this composite.

If the permeable layer 18 has a larger thickness, ie, a thicker soft magnetic material, in this case, for example, a FeSi material can be used, however, which has highly corrosive properties. Because the layer 18 but completely with the potting compound 24 surrounded and thus no more harmful environmental influences is exposed, this FeSi material for the layer 18 be used.

If the soft magnetic material of the layer 18 However, it is relatively thin, so the layer 18 galvanically or by various different thin-film techniques, eg sputtering, both on the lead frame 22 and / or on the underside of the substrate 12 be applied by means of a back side processing of a semiconductor wafer, wherein usually the procedure for the preparation of the layer 18 is chosen, with the cheaper production costs for the magnetic field detection device 10 can be achieved.

For thinner soft magnetic layers 18 is suitable, for example, a Ni material or a NiCoFe material, which can be advantageously applied galvanized.

The in 1 shown construction of the magnetic field sensor device according to the invention 10 with the conventional non-magnetic lead frame 22 , wherein between the connection line frame 22 and the substrate 12 the additional soft magnetic layer 18 is thus extremely advantageous in that one can apply conventional contacting techniques, since proven materials for the lead frame 22 can be used. Moreover, it has become clear from the above description that it is easily possible to have the respective thicknesses of the soft magnetic layer 18 and the connection line frame 22 different design, whereby the magnetic field sensor device according to the invention 10 can be adapted to a wide variety of boundary conditions.

The thickness of the permeable layer should be such that the magnetic induction in the material does not exceed a maximum permissible value. The maximum permissible value may, for example, be the saturation induction or already a smaller induction, in which the nonlinearity B (H) is already unduly large for the performance of the overall system is. The calculation of the induction in the material interior is a field-theoretical task for this case of an open magnetic circuit and must generally be carried out by means of a finite element simulation.

With regard to the above description of the magnetic field sensor device according to the invention 10 According to the first embodiment, it should be noted that, of course, it is also possible to use the soft magnetic layer 18 on the underside of the lead frame 22 ie on the substrate 12 opposite side of the lead frame 22 to install.

By this optional arrangement of the layer 18 However, the resulting air gap increases, the formation of egg nes air gap in the following with reference to the in 2 and 3 shown, further embodiments of the invention depending on the particular application will be explained in detail. Although this is the sensitivity to the in 1 shown magnetic field sensor device 10 on the other hand, but on the other hand, it is advantageous that the contact surface between the substrate 12 and the lead frame 22 from the additional soft magnetic layer 18 remains undisturbed, so that the bonding or "substrate-on-lead frame" process does not differ from the conventionally used manufacturing methods, and thus conventional manufacturing methods can be used without additional effort the magnetic field detection device 10 which is penetrated by magnetic field components but has no permeable material for focusing or concentrating the magnetic field components.

The following will now be based on 2 a further embodiment of a magnetic field sensor device 30 explained according to the present invention. It should be noted that in 2 functionally identical elements too 1 are denoted by the same reference numerals, wherein a further explanation of these elements is omitted.

As in 2 is shown, the magnetic field sensor device 30 again a substrate 12 with a first and second magnetic field sensor element integrated therein 14 . 16 on. The substrate 12 with the magnetic field sensor elements 14 . 16 is again by means of an adhesive layer 20 on a connection cable frame 32 appropriate. The connection line frame 32 In this embodiment, it has a soft magnetic material and thus is referred to as the magnetic field alignment device for aligning the first and second magnetic field components H ₁ , H ₂ to be detected with respect to the first and second magnetic field elements 14 . 16 intended. The magnetic field detection device according to the invention 30 is again optional by a potting compound 26 encapsulated. About the accommodated in the housing magnetic field detection device 30 there is a primary conductor 34 due to its current flow I a magnetic field in the form of (schematically drawn) magnetic field lines 36 generated. The magnetic field lines 36 be like it is in 2 is shown by means of a ring segment 38 made of a soft magnetic material and the lead frame 32 also made of a soft magnetic material.

As it is in 2 is shown, is the lead frame 32 made of a soft magnetic material to be a magnetic field alignment device for aligning the first and second magnetic field components H ₁ , H ₂ to be detected with respect to the first and second magnetic field sensor elements 14 . 16 to be effective. The connection line frame 32 is preferably made of a material or has a permeable material which on the one hand has the highest possible relative permeability (μr »1, and preferably μr ≌ 1,000-200,000), and on the other hand the smallest possible magnetic hysteresis (H _C ≌ 0, 01 A / cm). As in 2 is shown, the substrate has 12 two conventional magnetic field sensor elements 14 . 16 on, which are formed for example by Hall sensor elements or MAG-FETs, each of which provide an output signal which is linearly proportional to the magnetic flux density perpendicular to the substrate 12 is. When the first magnetic field sensor element 14 provides a positive output voltage, so provides the second magnetic field sensor element 16 at a corresponding interconnection, a negative output voltage.

By means of a further, optionally provided signal processing device (not shown in FIG 2 ) in the substrate 12 Now, these two output signals are combined, for example, by a difference of the output voltages with opposite polarity, which thus again leads to a doubling of an output signal of a single magnetic field sensor element. Here too, homogeneous background or interference magnetic fields are applied to the magnetic field sensor elements 14 . 16 act, and produce output signals of the same polarity in both magnetic field sensor elements, canceled by means of a subtraction performed in the course of further signal processing. This differential principle for Be drive the magnetic field sensor device 30 So realizes an effective suppression of magnetic interference fields.

The primary conductor 34 and the ring segment surrounding it 38 made of a soft magnetic material (eg soft iron) can be used in the 2 shown arrangement either part of the arrangement housing the magnetic field detection device 30 be, that are already assembled by the semiconductor device in the course of the housing manufacturing process, or the primary conductor 34 and the enveloping soft magnetic ring segment 38 are from the module manufacturer on the housing surface 26 glued. For this purpose, the semiconductor manufacturer supplies, for example, an IC arrangement with the magnetic field sensor device 30 in the plastic case 26 is cast, the module manufacturer on the housing surface, the primary conductor 34 and its permeable jacket 38 for example, by sticking applies.

But it is also possible, for example reference marks on the top of the housing 26 to attach, as accurate as possible lateral positioning of the primary conductor 34 with respect to the housing 26 and thus with respect to the first and second magnetic field sensor elements 14 . 18 facilitate. In addition, advantageously also colored markings, scratches, grooves or other reliefförmige or optical structuring on the housing top, on the housing bottom and / or on the housing side surfaces can be provided, the exact positioning of the primary conductor 34 with respect to the magnetic field sensor elements 14 . 16 simplify or to position the IC housing defined with respect to other parts of a magnetic circuit defined.

The effective magnetic field components on the magnetic field sensor elements 14 . 16 are calculated according to the flow rate, whereby along the indicated integration path 40 is integrated: B / μ 0 · (G / 2) · 2 = I

It was assumed that the relative permeabilities of the permeable cladding and the layer 32 are so large that the parts of the integration path extending in the interior of these parts may be neglected compared to the air gap portion. The total air gap g (= 2 × g / 2) has been minimized to the absolutely necessary dimensions, ie on the one hand the thickness of the substrate 12 , the thickness of the potting compound 26 above the surface of the substrate 12 and the thickness of the adhesive layer 20 , The thickness of the substrate 12 For example, can be reduced to 150 microns, the thickness of the potting compound 24 above the surface of the substrate 12 can also be reduced to about 150 microns, so that neglecting the thickness of the adhesive layer 20 This results in a significant increase in the sensitivity of the magnetic field detection device according to the invention compared to conventional current sensor devices due to the reduced air gap 30 ,

With regard to the above dimensioning information, it should be noted that the length of the total air gap g should be less than or equal to the distance A, wherein the distance A is the center distance of the two magnetic field sensor elements 14 . 16 indicates. If this relationship is not maintained, the magnetic field lines close 36 in that room area in which the potting compound 26 above the substrate 12 so that these magnetic field lines are the magnetic field sensor elements 14 . 16 no longer enforce and thus not be recorded. If it is assumed that a total air gap g = 0.6 mm, then it is quite sufficient, the two magnetic field sensor elements at a distance A = 1 mm apart in the substrate 12 to arrange. Even for smaller housings distances d = 2.5 mm of the two magnetic field sensor elements 14 . 16 quite possibly feasible.

To a sensor arrangement with the magnetic field detection device according to the invention 30 to produce a static and / or dynamic magnetic field with the smallest possible air gap, so according to the invention, a soft magnetic "short circuit" directly into the housing 26 the magnetic field detection device 30 with built-in. This is the connection line frame 32 , as in 2 used, which has a permeable material, such as Mu metal or permalloy, instead of the usual copper alloys. The electrical conductivity of these materials is sufficiently good to use on the one hand as a lead frame, these materials on the other hand, the magnetic field lines 36 as steep as possible or perpendicular to the plane of the substrate 18 force, causing the output signals of the magnetic field sensor elements 14 . 16 , can be maximized. As magnetic field sensor elements 14 . 16 For example, it is possible to use conventional Hall probes or MAG FETs which, as is known, effectively only detect the magnetic field components perpendicular to the plane of the active region.

To clarify the concept of the invention, some dimensions are now possible regarding various possible soft magnetic materials of the lead frame 32 presented.

For example, permalloy (78, 5Ni, 3Mo) has a resistivity p of 55 μΩcm. Mu metal3 (76Ni, 5Cu, 2Cr ) has, for example, a resistivity p of 55-62 μΩcm. Starting from a common geometry for the pins of a lead frame 32 made of a highly permeable material with a width of 1 mm, a length of 20 mm and a thickness of 0.2 mm results in a resistance in the range of 55-62 mΩ. This results along a pin of the lead frame 32 a voltage drop that is less than 1 mV at a current flow of 10 mA.

• ⁽¹⁾ für 400 μm Luftspalt

From the following experimentally determined overview, it also follows that the zero-point error can be kept sufficiently low by the coercive field strength H _C :

• ⁽¹⁾ for 400 μm air gap

The basis of 2 explained in detail, magnetic field sensor device according to the invention 30 , which is extremely advantageous as a current sensor device can be used, has a number of advantages. So can with the in 2 shown magnetic field sensor device 30 a very high sensitivity can be achieved because the soft magnetic material used for the lead frame 32 the magnetic induction in the narrow air gap, in which the magnetic field components H ₁ , H ₂ through the magnetic field sensor elements 14 . 16 , eg Hall sensor elements or MAG-FETs, are detected. Furthermore, the presented magnetic field sensor device provides 30 a very high degree of flexibility with regard to current sensor applications, since with the magnetic field sensor device according to the invention 30 almost any conductor cross-sectional areas for the primary conductor 34 can use. The soft magnetic material has the advantage that one the cross section of the primary conductor 34 can make essentially any size, without thereby a larger air gap in the magnetic field sensor device 30 to have to accept, since one the primary conductor 34 can expand to the top essentially any.

Based on 3 Now is another implementation and application of the magnetic field sensor device according to the invention 50 for detecting a static and / or dynamic magnetic field, as in 2 was illustrated explained.

Above the magnetic field sensor device 50 there is a pole wheel 52 , of which only a part is shown. The different hatched areas 52a . 52b of the pole wheel 52 represent magnetic north and south poles of a periodic permanently magnetized (ie hard magnetic) structure. In addition, the lines 54 of the magnetic field near the surface of the pole wheel 52 to see. They are directed in air from the magnetic north pole 52a to the magnetic south pole 52b the pole wheel structure 52 , The differently hatched areas are usually the same size, wherein preferably the center distance A of the two magnetic field sensor elements 14 . 16 with the width of a pole area 52a . 52b of the pole wheel 52 matches. This allows the pole wheel 52 be turned into positions as in 3 shown in which the first magnetic field sensor element 14 a magnetic field component detected in the surface of the substrate 12 while the second magnetic field sensor element 16 detects a magnetic field component of reversed polarity originating from the surface of the substrate 12 out shows.

By using a permeable material for the lead frame 32 The magnetic field lines are deformed so that they (theoretically) at a steeper angle and at an "infinite" permeability number at a right angle to the lead frame 32 impinge and thus also the two magnetic field sensor elements 14 . 16 in a steeper angle, ie as vertical as possible, enforce. As a result, the output signals of the two magnetic field sensor elements 14 . 16 increased. The length of the magnetic field lines 54 in air becomes smaller, because the magnetic field lines 54 over large parts in the lead frame 32 resulting in a further increase in the flux density at the location of the magnetic field sensor elements 14 . 16 comes.

Regarding the representation in 3 should be noted that the magnetic field lines 54 are shown only schematically and the dimensions of the magnetic field sensor device 50 in reality in Erstre ckungsrichtung of the lead frame, preferably by a factor greater than 2 are stretched.

Furthermore, it should be noted that for detecting the magnetic field lines 54 of course, the magnetic field sensor device 10 can be used as they are based on 1 described a non-magnetic (conventional) lead frame and an additional permeable layer 18 which is effective as a magnetic field alignment device.

As it is in 3 is shown, so can the magnetic field sensor device according to the invention 50 also very advantageous as a speed or rotational angle or rotational position sensor device used in conjunction with a pole. At the in 3 illustrated arrangement of the magnetic field sensor device 50 For example, it is particularly advantageous that the sensitivity of the sensor system is greatly increased over arrangements known in the art because of the permeable material in the lead frame 32 (or accordingly 1 in the layer 18 ) to increase the flux density by an increased density of magnetic field lines at the position of the magnetic field sensor elements 14 . 16 comes. The increased sensitivity also leads to a correspondingly improved signal-to-noise ratio of the output signal and thus ultimately to an improved jitter, which in the case of 3 illustrated Ausfüh approximately example for a better local resolution of the rotational position of the pole wheel 52 can be better exploited.

In order to clarify the concept according to the invention, a brief estimate is now made of the extent to which the sensitivity of the magnetic field sensor system according to the invention is determined by the magnetic field sensor device 50 integrated soft magnetic material in the housing 26 elevated. The following estimate can also apply to the embodiments of 1 and 2 be applied. For this purpose, the following quantities are assumed purely by way of example:
Distance of the pole wheel 52 above the surface of the potting compound 26 the magnetic field sensor device: d;
Thickness of the potting compound 26 above the substrate 12 : 200 μm;
Thickness of the substrate 12 : 220 μm;
Thickness of the adhesive layer 20 : 5 μm;
Thickness of lead frame 32 : 220 μm;
Thickness of the potting compound 26 below the substrate 12 , 250 μm.

If the lead frame is conventional, that is non-magnetic, the thickness of the adhesive layer with which the permeable layer 18 for example in the form of a soft magnetic sheet under the substrate 12 is attached, about 30 microns.

If the connection line frame 32 is non-magnetic and a soft iron sheet on the bottom of the housing 26 is glued to form a magnetic circuit is the "air gap", ie the length of the closed field lines through both magnetic field sensor elements 14 . 16 in air equal to 2 × (d + 200 μm + 220 μm + 5 μm + 220 μm + 250 μm + 30 μm) = 2 × d + 1, 85 μm.

If the connection line frame 32 According to the invention is soft magnetic, forms an air gap of length 2 · (d '+ 200 microns + 220 microns + 5 microns) = 2 · d' + 0.85 microns. As a result, according to the invention soft magnetic lead frame 32 now a 0.5 mm larger distance between the pole wheel 52 and the sensor housing surface commonly used for the mechanical air gap. If it is considered that the usual dimensions for a mechanical air gap are 1.5 mm to 2 mm, then a possible air gap increase of 0.5 mm with a constant sensitivity means a significant increase in the mechanical air gap. Larger mechanical air gaps allow greater mechanical manufacturing tolerances and thus more cost-effective manufacture and longer service intervals of sensor arrays using the magnetic field sensor devices of the present invention.

The following will now be based on the in 4 and 5a , b shown inventive magnetic field sensor devices of the inventive concept of a soft magnetic (permeable) layer below the substrate 12 extended to the extent that, under certain circumstances, it may also be very advantageous, alternatively or additionally, a soft magnetic layer over the substrate 12 to install. By the term "over the substrate" it is meant that the soft magnetic layer overlies the surface of the substrate 12 located in which the magnetic field sensor elements 14 . 16 are located.

At the in 4 illustrated embodiment of another magnetic field sensor device according to the invention 70 has a substrate 12 a first, into the substrate 12 integrated magnetic field sensor element 14 and a second, into the substrate 12 integrated magnetic field sensor element 16 on. On the substrate 12 furthermore runs a conductor track 72 , On top of the substrate 12 ie on the side of the substrate 12 in which the magnetic field sensor elements 14 and 16 and the track 72 are, for example, by means of an adhesive layer 20 a permeable layer 74 arranged. By means of a hard or soft solder layer 24 is the bottom of the substrate 12 with a conventional non-magnetic lead frame 22 connected. Furthermore, the magnetic field sensor device 70 in a potting compound 26 , which can be effective as housing encapsulated. The in 4 shown construction of the magnetic field sensor device according to the invention 70 can be compared to the structure of the magnetic field sensor device 10 from 1 be achieved by the mounting order of the substrate 12 and the permeable layer 18 be reversed.

A new functionality of the magnetic field sensor device 50 is then created when the permeable layer 18 the magnetic field of the current-carrying conductor 72 to the first and second magnetic field sensor elements 14 . 16 that are in the substrate 12 are integrated, should align. In 4 is the direction of the current flow I in the indicated trace 72 into or out of the drawing plane.

Because the permeable layer 74 unlike those related to the 1 - 3 illustrated embodiments of the magnetic field sensor devices now need not take over a task of a carrier substrate, you can, for example, magnetic ceramic materials for the permeable layer 74 use. These materials have a significantly lower conductivity than the materials mentioned with respect to the above embodiments. This is advantageous, for example, since this results in fewer eddy currents in the permeable layer 74 result, so that the power loss can be reduced.

By contrast, in the case of the soft-magnetic lead frame described with reference to the preceding embodiments, the high conductivity is explicitly desired, since the lead frame also forms the connections for the supply voltage and input / output signals of the magnetic field sensor device. But this aspect is with the magnetic layer 74 as they are in 4 is no longer essential on the substrate top and thus can be optimized in terms of high frequency characteristics, small eddy current losses, etc. In particular, the soft magnetic layer can thus also be designed in the form of a magnetic ceramic material.

By definition, the substrate has 12 a surface in which the components, ie the magnetic field sensor elements 14 . 16 and generally also the contact pads (bond pads) are located. This surface of the substrate 12 is referred to as its top. The side facing away from this side surface of the substrate 12 is referred to as its bottom.

According to the invention, all the magnetic field sensor devices described so far can also be realized if one is in an otherwise non-magnetic housing 26 a soft magnetic layer 74 on the substrate top. In this case, the conductor should be 34 out 2 or the pole wheel 52 out 3 Ideally, of course, be located at or immediately before the bottom of the magnetic field sensor device. However, this variant is not quite as advantageous as the embodiments described above, since the air gap D due to the thickness of the lead frame and the potting compound 26 at the bottom of the magnetic field sensor device is usually greater than due to the thickness of the potting compound 26 at the top of the magnetic field sensor device.

On the other hand, the in 4 shown magnetic field sensor device 70 also provide new, additional functionalities.

4 So shows a structure of the magnetic field sensor device 70 in which the semiconductor substrate 12 (the semiconductor chip), in turn, the vertical magnetic field sensor elements 14 . 16 as well as the current-carrying conductor track 72 contains. This track 72 may, for example, as the wiring level of the substrate 12 be executed. It may be desired that the on the semiconductor substrate 12 located magnetic field sensor elements 14 . 16 detect the magnetic field components caused by the current flow in the conductor 72 be generated. This can be by means of the magnetic field sensor device according to the invention 70 For example, realize a power meter.

The soft magnetic layer 74 above the substrate 12 then has the advantage that this soft magnetic layer 74 the magnetic field lines around the conductor 72 leads and the magnetic field at the location of the magnetic field sensor elements 14 . 16 as vertical as possible to the surface of the substrate 12 and, moreover, the magnetic field also concentrates there, and hence the magnetic flux density in the magnetic field sensor elements 14 . 16 amplified, which also causes the output signals of the magnetic field sensor elements 14 . 16 and thus increase the sensitivity of the overall system.

It is also advantageous, the soft magnetic layer 74 not necessarily over the entire surface of the surface of the substrate 12 to attach, ie the substrate 12 completely cover, but the soft magnetic layer 74 only over the contiguous area of the conductor 72 and the magnetic field sensor elements 14 . 16 to install. This arrangement is preferred because according to the invention the soft magnetic layers only on the entire surface of the substrate 12 should be executed when this soft magnetic layer 74 Magnetic fields outside the substrate 12 can be generated optimally to those in the substrate 12 to align located vertical magnetic field sensor elements. Are the fields on or in the substrate 12 even produced, are for the required directivity smaller, better accentuated soft magnetic layers 74 required.

Based on 5a - 5b Now, another embodiment of a magnetic field sensor device according to the invention 90 explained in detail, at both above and below the substrate 12 a permeable layer is arranged, wherein the permeable layer 32 at the in 5a represented arrangement by a lead frame 32 made of a permeable material and at the in 5b illustrated arrangement of an additional layer 18 between the substrate 12 and a conventional non-magnetic lead frame 22 is realized.

If the source of the magnetic field is on or in the substrate 12 for example, as a current flow through the conductor track 72 In the wiring plane, the magnetic flux density at the two magnetic field sensor elements can be provided by the two permeable layers, one above the magnetic field source and the other below 14 . 16 amplified and the magnetic field lines as perpendicular to the plane of the substrate 12 be aligned, so that the sensitivity of the magnetic field sensor device 90 can be further increased.

It should be noted that, in the case where the current flowing to the magnetic field to be detected flows through the lead frame (which of course has a non-magnetic material), the lower permeable layer 18 also below the conventional lead frame 22 must be attached. This embodiment is not shown as a figure.

Thus, if the current flow to be detected is not in the wiring plane of the substrate 12 flows but in the lead frame 22 so must the permeable layer 18 on the underside of the lead frame 22 be applied so that the conventional lead frame 22 , in which the current flow to be detected and thus the magnetic field to be detected is generated, again between the two permeable layers 18 . 74 located. The underside of the lead frame 22 be by definition the side that is the substrate 12 turned away.

Regarding the in the foregoing magnetic field sensor devices according to the invention should It should be noted that these are both static and dynamic Capture magnetic fields, wherein the magnetic field sensor device according to the invention also be used as a static magnetic field sensor device can, in the case of a static magnetic field and a static supply provides an output signal.

When Magnetic field sensor elements can be inventively particularly use well-known Hall sensor elements and MAG-FETs, since these Magnetic field sensor elements even at a fixed time Magnetic field and a constant current flow through the magnetic field sensor element provide an output signal.

If as a magnetic field sensor elements Hall sensor elements are used, can be used to eliminate an offset signal of the Hall sensor elements an operation (spinning current operation) thereof are selected the Hall sensor elements are often operated dynamically, d. H. you change the current flow direction through the Hall sensor element periodically what but for the principal function of the magnetic field sensor devices according to the invention, as described above, is not necessary.

Further should be noted that the magnetic field sensor devices according to the invention especially then functional are when the soft magnetic material of the ferromagnetic layer not in saturation is driven, d. H. the nonlinearity of the B (H) hysteresis curve of the soft magnetic material for the operation of the magnetic field sensor devices according to the invention not decisive.

nevertheless can this nonlinearity but also advantageous in the magnetic field sensor devices according to the invention be used, since in very strong magnetic fields, the soft magnetic Layer the magnetic field conducts worse because the soft magnetic Material in this characteristic area B (H) is operated by the characteristic has a smaller slope, which is equivalent with the fact that the relative permeability of the soft magnetic material drops drastically. As a result, the magnetic field sensor device according to the invention a larger dynamic range achieve, d. H. even with relatively large magnetic fields to be detected goes the signal processing circuit associated with the magnetic field sensor elements is not so fast to the limits of their tax area.

It should be noted that in the respective embodiments described advantages alike for all magnetic field sensor devices according to the invention be valid.

10

Magnetic field detector

12

substratum

14

Magnetic field sensor element

16

Magnetic field sensor element

18

permeable layer

20

adhesive layer

22

conventional Lead frame

24

Soft / hard solder layer

26

grout

30

Magnetic field detector

32

Lead frame with permeable material

34

primary conductor

36

magnetic field lines

38

ring segment

40

of integration

50

Magnetic field detector

52

flywheel

52a

magnetic North Pole

52b

magnetic South Pole

54

magnetic field lines

70

Magnetic field detector

72

conductor path

74

permeable layer

Claims (18)

Magnetic field sensor device ( 10 ; 30 ; 50 ; 70 ; 90 ) for detecting a magnetic field, comprising: a one-piece substrate ( 12 ) with a first, into the substrate ( 12 ) integrated magnetic field sensor element ( 14 ) for detecting one perpendicular to the substrate ( 12 ), the first static magnetic field component (H ₁ ), and with a second, into the substrate ( 12 ) integrated magnetic field sensor element ( 16 ) for detecting a perpendicular to the substrate ( 12 ), second static magnetic field component (H ₂ ), wherein the first magnetic field sensor element ( 14 ) and the second magnetic field sensor element ( 16 ) are spaced from each other by a predetermined distance A, the predetermined distance A being set so that the first and second magnetic field components (H ₁ , H ₂ ) are opposite to each other, and a magnetic field alignment device ( 18 ; 32 ; 74 ) for aligning the first and second magnetic field components (H ₁ , H ₂ ) to be detected with respect to the first and second magnetic field sensor elements ( 14 . 16 ), wherein the magnetic field alignment arrangement ( 18 ; 32 ; 74 ) has a layer of a permeable material, both magnetic field sensor elements ( 14 . 16 ), parallel to the substrate ( 12 ) and has a thickness of more than 50 microns, wherein the magnetic field alignment arrangement ( 18 ; 32 ; 74 ) has a permeable material and is formed so that a caused by the first and second magnetic field component magnetic induction in the magnetic field alignment arrangement ( 18 ; 32 ; 74 ) is lower than the saturation induction in the permeable material. A magnetic field sensor device according to claim 1, wherein the layer of a permeable material the substrate ( 12 ) is attached. Magnetic field sensor device according to one of the preceding claims, in which the one-piece substrate ( 12 ) comprises a semiconductor material. Magnetic field sensor device according to one of the preceding claims, in which the first and the second magnetic field sensor elements ( 14 . 16 ) have an active semiconductor region for magnetic field detection. Magnetic field sensor device according to claim 4, wherein the active semiconductor region is an integrated flat Hall region is. Magnetic field sensor device according to claim 4, wherein the active semiconductor region is an integrated gate region of a MAG field effect transistor is. Magnetic field sensor device according to one of the preceding claims, in which the layer ( 18 ; 32 ; 74 ) is made in one piece, wherein the layer ( 18 ) above and / or below the substrate ( 12 ) is arranged. Magnetic field sensor device according to one of the preceding claims, in which the substrate ( 12 ) on a connection line frame ( 32 ), wherein the connection line frame ( 32 ) has the magnetic field alignment arrangement. Magnetic field sensor device according to claim 8, in which the connection line frame ( 32 ) in the area where the substrate ( 12 ) on the lead frame ( 32 ), which has permeable material. Magnetic field sensor device according to any one of the preceding claims, wherein the magnetic alignment arrangement is designed to focus the first and second magnetic field component (H _1, H ₂₎ and to conduct. A magnetic field sensor device according to claim 10, wherein the magnetic field alignment device is configured to sense the magnetic flux density through the first and second magnetic field sensor elements. 14 . 16 ) increase. Magnetic field sensor device according to one of the preceding claims, in which the first and second magnetic field sensor elements ( 14 . 16 ) are designed to be supplied with a static supply energy. Magnetic field sensor device according to one of the preceding Claims, in which the permeable material has a relative permeability factor μr »1. Magnetic field sensor device according to claim 13, wherein the permeable material has a relative permeability factor μr in one Range from 1,000 to 200,000. Magnetic field sensor device according to one of the preceding claims, wherein the magnetic field alignment arrangement is glued to the substrate, soldered, galvanically mounted, or by means of a thin-film technique on the substrate ( 12 ) is attached. Magnetic field sensor device according to one of the preceding Claims, when the permeable material of a group of materials selected is the group of soft iron, FeSi material, Ni material, NiCoFe material, Mu-metal material, Permalloy material, permeable ceramic materials or combinations has the same. Magnetic field sensor device according to one of the preceding Claims, being on a housing top the magnetic field sensor device relieflörmige markings, scratches, Grooves or optical markings for defined positioning the magnetic field sensor device mounted with respect to an external arrangement are. Magnetic field sensor device according to one of the preceding claims, wherein the layer of ei a permeable material has a thickness in a range of about 200 microns.