DE10329325A1 - Structuring treatment of surface with edge, on which protection layer is deposited and then removed by etching together with edge - Google Patents

Structuring treatment of surface with edge, on which protection layer is deposited and then removed by etching together with edge Download PDF

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Publication number
DE10329325A1
DE10329325A1 DE2003129325 DE10329325A DE10329325A1 DE 10329325 A1 DE10329325 A1 DE 10329325A1 DE 2003129325 DE2003129325 DE 2003129325 DE 10329325 A DE10329325 A DE 10329325A DE 10329325 A1 DE10329325 A1 DE 10329325A1
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Prior art keywords
edge
protective layer
protection layer
deposited
photoresist
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DE2003129325
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German (de)
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Matthias Dr. Rebhan
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Siemens AG
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Siemens AG
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00547—Etching processes not provided for in groups B81C1/00531 - B81C1/00539
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388—Etch mask forming
    • B81C1/00404—Mask characterised by its size, orientation or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3085—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0041—Etching of the substrate by chemical or physical means by plasma etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0166—Polymeric layer used for special processing, e.g. resist for etching insulating material or photoresist used as a mask during plasma etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09145—Edge details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/403—Edge contacts; Windows or holes in the substrate having plural connections on the walls thereof

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Micromachines (AREA)

Abstract

Surface (1) with edge (4) is provided with protection layer of photo lacquer on edge. Both protection layer and edge are subject to etching for edge removal in structuring design (2) leading from first flat region to second such region. Preferably protective layer is so deposited that it is thinner on edge than in adjacent sections. Foil may be used as protective layer. Typically surface with edge is surface of printed circuit board or semiconductor, with edge formed by two planes of crystal grid. Independent claims are included for product with MEMS.

Description

Die Erfindung betrifft die Behandlung einer Oberfläche mit einer Kante.The The invention relates to the treatment of a surface with an edge.

Wie in 1 abgebildet, soll auf einer Oberfläche 1 mit starker Topografie eine Struktur 2, wie beispielsweise eine Leiterbahn, erzeugt werden. Diese Struktur 2 soll von einem ersten ebenen Bereich 3 über eine Kante 4 zu einem zweiten ebenen Bereich 5 geführt werden, wobei der erste ebene Bereich 3 und der zweite ebene Bereich 5 in einem Winkel zueinander stehen, so dass die Kante 4 gebildet wird.As in 1 pictured, should be on a surface 1 a structure with strong topography 2 , such as a trace, are generated. This structure 2 should be from a first level area 3 over an edge 4 to a second level area 5 be guided, wherein the first plane area 3 and the second level area 5 at an angle to each other, leaving the edge 4 is formed.

Nach dem derzeitigen Stand der Technik wird für die Herstellung der Struktur 2 ein Fotolithographieprozess angewandt. Allerdings funktioniert dieses Verfahren nur eingeschränkt bzw. schlecht an spitzen Kanten. Wie in 2 dargestellt, nimmt an der Kante 4 die Dicke des im Fotolithographieprozess eingesetzten Fotolacks 6 prozessbedingt ab bzw. die Oberfläche ist nicht oder nur noch unzureichend geschützt. Dadurch kann die Oberfläche bei den folgenden Prozessschritten wie Ätzen beschädigt werden, wodurch die gewünschte Strukturierung nicht erzeugt werden kann.According to the current state of the art is used for the production of the structure 2 applied a photolithography process. However, this method works only limited or poor on sharp edges. As in 2 shown, takes on the edge 4 the thickness of the photoresist used in the photolithography process 6 depending on the process or the surface is not or only insufficiently protected. As a result, the surface can be damaged in the following process steps, such as etching, whereby the desired structuring can not be generated.

Dieses Problem tritt beispielsweise in der MEMS (Michroelectromechanical System)-Technologie auf, mit deren Hilfe Gräben in Silizium mit vorgegebenem Neigungswinkel geätzt werden können.This Problem occurs for example in the MEMS (Michroelectromechanical System) technology, with the help of trenches in silicon with a given Etched angle can be.

Davon ausgehend liegt der Erfindung die Aufgabe zugrunde, ein, insbesondere fotolithographisches, Erzeugen von Strukturen über scharfe Kanten zu ermöglichen.From that Based on the invention, the object is based, in particular photolithographic, creating structures over sharp edges.

Diese Aufgabe wird durch die in den unabhängigen Ansprüchen angegebenen Erfindungen gelöst.These The object is achieved by those specified in the independent claims Inventions solved.

Vorteilhafte Ausgestaltungen ergeben sich aus den abhängigen Ansprüchen.advantageous Embodiments emerge from the dependent claims.

Der Erfindung liegt die Idee zugrunde, dass sich die geschilderten Schwierigkeiten bei der Herstellung einer Struktur über eine Kante hinweg vermeiden lassen, wenn die Kante abgerundet wird. Die Ursache für die Schwierigkeiten ist darin begründet, dass der Fotolack an Spitzen Kanten aufgrund der Oberflächenspannung sehr dünn wird. Dagegen bildet der Lack auf einem abgerundeten Bereich eine kontinuierliche Fläche über die Topografie hinweg, so dass eine weitere Strukturierung möglich ist.Of the Invention is based on the idea that the difficulties described avoid creating over the edge of a structure leave when the edge is rounded. The cause of the difficulties is due to the fact that the photoresist edges at edges due to surface tension very thin becomes. In contrast, the paint on a rounded area forms a continuous Surface over the Topography away, so that a further structuring is possible.

Dementsprechend wird in einem Behandlungsverfahren für eine Oberfläche mit einer Kante zunächst an der Kante eine Schutzschicht aufgebracht. Dann wird die Schutzschicht und die Kante einem Ätzprozess ausgesetzt und die Kante durch den Ätzprozess verrundet.Accordingly is involved in a treatment process for a surface an edge first applied a protective layer on the edge. Then the protective layer and the edge of an etching process exposed and the edge rounded by the etching process.

Prinzipiell reicht es, die Schutzschicht gleich dick über die Kante und die benachbarten Ebenen verlaufen zu lassen. Durch die exponierte Lage der Kante aufgrund der Topografie der Oberfläche erfolgt ein verstärktes Ätzen an der Kante, wodurch diese abgetragen und dabei verrundet wird. Vorteilhaft wird die Schutzschicht aber gleich so aufgetragen, dass sie auf der Kante dünner ist als neben der Kante, insbesondere so dass sie auf der Kante vollständig oder zumindest nahezu vollständig verschwindet.in principle It is sufficient, the protective layer of the same thickness over the edge and the adjacent Levels to go. Due to the exposed position of the edge Due to the topography of the surface, there is an increased etching the edge, whereby this is removed and thereby rounded. Advantageous However, the protective layer is applied immediately so that they on the edge thinner is as next to the edge, especially so that it is on the edge Completely or at least almost completely disappears.

Vorzugsweise wird eine Schutzschicht aus Fotolack eingesetzt. Es kann aber auch ein anderes, insbesondere im Ätzprozess wegätzbares Material zum Einsatz kommen, wie beispielsweise eine auflaminierte Folie.Preferably a protective layer of photoresist is used. But it can too another, especially in the etching process wegätzbares Material are used, such as a laminated Foil.

Vorzugsweise ist die Oberfläche die Oberfläche eines Schaltungsträgers, auf dem nachher eine Schaltungsstruktur erzeugt wird.Preferably is the surface the surface a circuit board, on which a circuit structure is subsequently generated.

Die Oberfläche kann die Oberfläche von Keramik, Metall, Glas, Kunststoff oder eines Halbleiters sein. Die Kante wird insbesondere von zwei nicht parallelen Ebenen eines Kristallgitters gebildet und ist dadurch eine atomare Kante. Beispielsweise kann sie von der 1,1,1-Ebene und der 1,0,0-Ebene eines Silizium-Einkristalls gebildet werden.The surface can the surface of ceramic, metal, glass, plastic or a semiconductor. In particular, the edge is made up of two non-parallel planes Crystal lattice is formed and is thus an atomic edge. For example For example, it may be formed by the 1,1,1 level and the 1,0,0 level of a silicon single crystal become.

Nach dem Verrunden der Kante durch Abtragen kann die restliche Schutzschicht entfernt und die Oberfläche mit einem leitfähigen Metall bedeckt werden, um auf der Oberfläche eine Struktur zu erzeugen.To The rounding off of the edge by removing it can remove the remaining protective layer removed and the surface with a conductive Metal to be produced on the surface of a structure.

Vorteilhafte Ausgestaltungen eines Erzeugnisses mit einer Oberfläche, die mit einem Verfahren nach einer der zuvor geschilderten Ausgestaltungen behandelt wurde, ergeben sich analog zu den vorteilhaften Ausgestaltungen des Verfahrens. Das Erzeugnis ist insbesondere ein MEMS.advantageous Embodiments of a product having a surface, the treated with a method according to one of the previously described embodiments was, arise analogously to the advantageous embodiments of the procedure. The product is in particular a MEMS.

Weitere Vorteile und Merkmale der Erfindung ergeben sich aus der Beschreibung eines Ausführungsbeispiels anhand der Zeichnung. Dabei zeigt:Further Advantages and features of the invention will become apparent from the description an embodiment based on the drawing. Showing:

1 eine über eine Kante zu erzeugende Struktur; 1 a structure to be created over an edge;

2 eine Fotolackschicht auf einer Oberfläche mit einer Kante nach dem Stand der Technik; 2 a photoresist layer on a surface with a prior art edge;

3a und 3b ein Behandlungsverfahren für eine Oberfläche mit einer Kante; 3a and 3b a treatment method for a surface having an edge;

4 eine mit einem Behandlungsverfahren nach 3 behandelte Oberfläche, die mit der nach 1 zu erzeugenden Struktur versehen ist. 4 one with a treatment method 3 treated surface with the after 1 is provided to be generated structure.

In 3a erkennt man eine mit einem ersten ebenen Bereich 3 und einem zweiten ebenen Bereich 5 gebildete Oberfläche 1. Der zweite ebene Bereich 5 kann beispielsweise die Seitenwand eines Grabens sein, der durch Kaliumhydroxid-Ätzen im Substrat erzeugt wird, dessen Oberfläche die Oberfläche 1 ist.In 3a one recognizes one with a first flat area 3 and a second planar area 5 formed surface 1 , The second level area 5 may be, for example, the sidewall of a trench formed by potassium hydroxide etching in the substrate, the surface of which is the surface 1 is.

Entlang der Linie, an der der erste ebene Bereich 3 und der zweite ebene Bereich 5 aneinander stoßen, weist die Oberfläche 1 eine Kante 4 auf. In einem ersten Prozessschritt wird Fotolack 7 in geeigneter Dicke, beispielsweise durch ED (Electrolytic Deposition)-Abscheidung oder Sprühbelackung aufgebracht. An der Kante 4 nimmt die Dicke des Fotolacks 7 ab. Der Fotolack 7 wird nicht strukturiert.Along the line, at the first level area 3 and the second level area 5 abut, the surface indicates 1 an edge 4 on. In a first process step becomes photoresist 7 in a suitable thickness, for example by ED (Electrolytic Deposition) deposition or spray applied. At the edge 4 takes the thickness of the photoresist 7 from. The photoresist 7 is not structured.

Als nächstes der Fotolack 7 einem geeigneten Ätzmedium ausgesetzt, beispielsweise nasschemisch oder durch Trockenätzen. Die Ätze trägt gleichzeitig den Fotolack 7 und freigelegtes Material des Substrats ab, das die Oberfläche 1 bildet. Dadurch nimmt die Dicke des Fotolacks 7 ab und die Oberfläche 1 wird ebenfalls abgetragen, sobald sie frei liegt. Dies geschieht als erstes an der Kante 4.Next, the photoresist 7 exposed to a suitable etching medium, for example wet-chemically or by dry etching. The etch simultaneously carries the photoresist 7 and exposed material of the substrate that forms the surface 1 forms. This decreases the thickness of the photoresist 7 off and the surface 1 will also be removed as soon as it is cleared. This happens first on the edge 4 ,

Wie in 3b dargestellt, wandert die Lackfront mit zunehmender Prozesszeit von der Kante 4 weg. Währenddessen wird auch der jeweils exponierte Teil der Oberfläche 1 des Substrats abgetragen. Dies führt zu einer Verrundung der Kante 4. Der Radius der Verrundung ist durch das Verhältnis der Abtragrate des Fotolacks 7 und der Oberfläche 1 sowie durch die Prozesszeit bedingt.As in 3b shown, the paint front moves from the edge with increasing process time 4 path. Meanwhile, the exposed part of the surface becomes also 1 removed from the substrate. This leads to a rounding of the edge 4 , The radius of the rounding is determined by the ratio of the removal rate of the photoresist 7 and the surface 1 as well as due to the process time.

Anschließend kann der Fotolack 7 entschichtet und die Oberfläche 1 mit herkömmlicher Fototechnik strukturiert werden. Dazu wird die gesamte Oberfläche 1 beispielsweise, wie in 4 dargestellt, durch Bedampfen oder Sputtern mit einem leitfähigen Metall 8 bedeckt. Anschließend wird elektrostatisch und/oder elektrodynamisch Lack abgeschieden (zum Beispiel Sprühbelackung, ED-Lacke). Dieser Lack wird fotolithographisch strukturiert. Die freigelegten Strukturen werden anschließend geätzt.Subsequently, the photoresist 7 stripped and the surface 1 be structured with conventional photographic technology. This is the entire surface 1 for example, as in 4 represented by vapor deposition or sputtering with a conductive metal 8th covered. Subsequently, electrostatically and / or electrodynamically lacquer is deposited (for example, spray lacquer, ED lacquers). This paint is structured by photolithography. The exposed structures are then etched.

Das Ergebnis ist die in 1 dargestellte Oberfläche 1 über deren in der beschriebenen Weise verrundete Kante 4 die zu erzeugende Struktur 2 läuft.The result is the in 1 illustrated surface 1 about their rounded in the manner described edge 4 the structure to be generated 2 running.

Das beschriebene Verfahren hat zahlreiche Vorteile:

  • – Es ist leicht durchführbar.
  • – Es ist leicht, beispielsweise durch optische Inspektion, nachprüfbar, ob das Verfahren eingesetzt wurde.
  • – Ein ganzer Wafer kann auf einmal, also im Nutzen, prozessiert werden, statt die Kanten einzeln abfahren zu müssen, wie in einem mechanischen Verfahren.
The method described has numerous advantages:
  • - It's easy to do.
  • - It is easy, for example, by optical inspection, verifiable that the process has been used.
  • - A whole wafer can be processed in one go, ie in use, instead of having to cut off the edges individually, as in a mechanical process.

Ein Hauptanwendungsbereich des Verfahrens sind Silizium-Einkristalle, insbesondere für die MEMS-Technologie. Das Verfahren ist allerdings auch für alle anderen Materialien mit spitzen Kanten einsetzbar, wie beispielsweise Halbleiter, Metalle, Keramiken, Gläser, Kunststoffe usw. Es ist insbesondere für alle Materialien geeignet, bei denen ein mechanisches Polieren nicht möglich ist, weil beispielsweise die vorhandenen Strukturen zu klein sind.One Main application of the method are silicon single crystals, in particular for the MEMS technology. The procedure is however also for all other materials can be used with sharp edges, such as semiconductors, metals, ceramics, glasses, Plastics, etc. It is especially suitable for all materials where a mechanical polishing is not possible because, for example the existing structures are too small.

Claims (11)

Behandlungsverfahren für eine Oberfläche (1) mit einer Kante (4), – bei dem an der Kante (4) eine Schutzschicht (7) aufgebracht wird, – bei dem die Schutzschicht (7) und die Kante (4) einem Ätzprozess ausgesetzt werden, – bei dem die Kante (4) durch den Ätzprozess abgetragen wird.Treatment method for a surface ( 1 ) with an edge ( 4 ), - at the edge ( 4 ) a protective layer ( 7 ) is applied, - in which the protective layer ( 7 ) and the edge ( 4 ) are exposed to an etching process, - in which the edge ( 4 ) is removed by the etching process. Verfahren nach Anspruch 1, bei dem die Schutzschicht (7) so aufgetragen wird, dass sie auf der Kante (4) dünner ist als neben der Kante (4).Method according to Claim 1, in which the protective layer ( 7 ) is applied so that they are on the edge ( 4 ) is thinner than next to the edge ( 4 ). Verfahren nach einem der vorhergehenden Ansprüche, bei dem die Schutzschicht (7) aus Lack ist, insbesondere aus Fotolack.Method according to one of the preceding claims, in which the protective layer ( 7 ) is made of paint, in particular of photoresist. Verfahren nach einem der Ansprüche 1 oder 2, bei dem als Schutzschicht eine Folie auflaminiert wird.Method according to one of claims 1 or 2, wherein as a protective layer a film is laminated. Verfahren nach einem der vorhergehenden Ansprüche, bei dem die Oberfläche (1) die Oberfläche eines Schaltungsträgers ist.Method according to one of the preceding claims, in which the surface ( 1 ) is the surface of a circuit substrate. Verfahren nach einem der vorhergehenden Ansprüche, bei dem die Oberfläche (1) die Oberfläche eines Halbleiters ist.Method according to one of the preceding claims, in which the surface ( 1 ) is the surface of a semiconductor. Verfahren nach einem der vorhergehenden Ansprüche, bei dem die Kante (4) von zwei nicht parallelen Ebenen eines Kristallgitters gebildet wird.Method according to one of the preceding claims, in which the edge ( 4 ) is formed by two non-parallel planes of a crystal lattice. Verfahren nach einem der vorhergehenden Ansprüche, bei dem nach dem Abtragen der Kante (4) die restliche Schutzschicht (7) entfernt wird.Method according to one of the preceding claims, in which after the removal of the edge ( 4 ) the remaining protective layer ( 7 ) Will get removed. Verfahren nach Anspruch 8, bei dem nach dem Entfernen der restlichen Schutzschicht (7) die Oberfläche (1) mit einem leitfähigen Metall (8) bedeckt wird.Method according to Claim 8, in which, after removal of the remaining protective layer ( 7 ) the surface ( 1 ) with a conductive metal ( 8th ) covered becomes. Erzeugnis mit einer Oberfläche (1), die mit einem Verfahren nach einem der Ansprüche 1 bis 9 behandelt wurde.Product with a surface ( 1 ) treated with a method according to any one of claims 1 to 9. Erzeugnis nach Anspruch 10, dadurch gekennzeichnet, dass das Erzeugnis ein MEMS aufweist.Product according to claim 10, characterized that the product has a MEMS.
DE2003129325 2003-06-30 2003-06-30 Structuring treatment of surface with edge, on which protection layer is deposited and then removed by etching together with edge Withdrawn DE10329325A1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999022406A1 (en) * 1997-10-28 1999-05-06 Fairchild Semiconductor Corporation Trench ic and method of making
US6027982A (en) * 1999-02-05 2000-02-22 Chartered Semiconductor Manufacturing Ltd. Method to form shallow trench isolation structures with improved isolation fill and surface planarity
US6265317B1 (en) * 2001-01-09 2001-07-24 Taiwan Semiconductor Manufacturing Company Top corner rounding for shallow trench isolation
DE4240504C2 (en) * 1992-12-02 2003-04-30 Cis Inst Fuer Mikrosensorik Gg Process for the production of interconnect structures over trench regions of substrates

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4240504C2 (en) * 1992-12-02 2003-04-30 Cis Inst Fuer Mikrosensorik Gg Process for the production of interconnect structures over trench regions of substrates
WO1999022406A1 (en) * 1997-10-28 1999-05-06 Fairchild Semiconductor Corporation Trench ic and method of making
US6027982A (en) * 1999-02-05 2000-02-22 Chartered Semiconductor Manufacturing Ltd. Method to form shallow trench isolation structures with improved isolation fill and surface planarity
US6265317B1 (en) * 2001-01-09 2001-07-24 Taiwan Semiconductor Manufacturing Company Top corner rounding for shallow trench isolation

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