DE1138063T1 - Herstellung von galliumnitrid-schichten mittels lateralem kristallwachstum - Google Patents

Herstellung von galliumnitrid-schichten mittels lateralem kristallwachstum

Info

Publication number
DE1138063T1
DE1138063T1 DE1138063T DE99967152T DE1138063T1 DE 1138063 T1 DE1138063 T1 DE 1138063T1 DE 1138063 T DE1138063 T DE 1138063T DE 99967152 T DE99967152 T DE 99967152T DE 1138063 T1 DE1138063 T1 DE 1138063T1
Authority
DE
Germany
Prior art keywords
gallium nitride
posts
mask
sidewalls
trenches
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE1138063T
Other languages
English (en)
Inventor
J Linthicum
Thomas Gehrke
B Thomsom
P Carlson
Pradeep Rajagopal
F Davis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North Carolina State University
University of California
Original Assignee
North Carolina State University
University of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North Carolina State University, University of California filed Critical North Carolina State University
Publication of DE1138063T1 publication Critical patent/DE1138063T1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H01L21/0265—Pendeoepitaxy
DE1138063T 1998-11-24 1999-11-23 Herstellung von galliumnitrid-schichten mittels lateralem kristallwachstum Pending DE1138063T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/198,784 US6177688B1 (en) 1998-11-24 1998-11-24 Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
PCT/US1999/028056 WO2000033365A1 (en) 1998-11-24 1999-11-23 Fabrication of gallium nitride layers by lateral growth

Publications (1)

Publication Number Publication Date
DE1138063T1 true DE1138063T1 (de) 2002-10-02

Family

ID=22734832

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1138063T Pending DE1138063T1 (de) 1998-11-24 1999-11-23 Herstellung von galliumnitrid-schichten mittels lateralem kristallwachstum
DE69940274T Expired - Lifetime DE69940274D1 (de) 1998-11-24 1999-11-23 Herstellung von galliumnitrid-schichten mittels lateralem kristallwachstum

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69940274T Expired - Lifetime DE69940274D1 (de) 1998-11-24 1999-11-23 Herstellung von galliumnitrid-schichten mittels lateralem kristallwachstum

Country Status (13)

Country Link
US (4) US6177688B1 (de)
EP (1) EP1138063B1 (de)
JP (1) JP4790909B2 (de)
KR (1) KR100608996B1 (de)
CN (1) CN1155993C (de)
AT (1) ATE420458T1 (de)
AU (1) AU2349100A (de)
CA (1) CA2347425C (de)
DE (2) DE1138063T1 (de)
ES (1) ES2169015T1 (de)
HK (1) HK1036360A1 (de)
MY (1) MY129562A (de)
WO (1) WO2000033365A1 (de)

Families Citing this family (338)

* Cited by examiner, † Cited by third party
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ATE420458T1 (de) 2009-01-15
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WO2000033365A8 (en) 2002-01-24
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US20020179911A1 (en) 2002-12-05
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MY129562A (en) 2007-04-30
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US6376339B2 (en) 2002-04-23
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US7378684B2 (en) 2008-05-27
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