DE19704351A1 - Lead frame, for subsequent chip mounting and bonding to chip housing - Google Patents

Lead frame, for subsequent chip mounting and bonding to chip housing

Info

Publication number
DE19704351A1
DE19704351A1 DE19704351A DE19704351A DE19704351A1 DE 19704351 A1 DE19704351 A1 DE 19704351A1 DE 19704351 A DE19704351 A DE 19704351A DE 19704351 A DE19704351 A DE 19704351A DE 19704351 A1 DE19704351 A1 DE 19704351A1
Authority
DE
Germany
Prior art keywords
lead frame
leadframe
chip
adhesive
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19704351A
Other languages
German (de)
Other versions
DE19704351B4 (en
Inventor
Janczek Thies
Achim Neu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Siemens AG
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Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19704351A priority Critical patent/DE19704351B4/en
Publication of DE19704351A1 publication Critical patent/DE19704351A1/en
Application granted granted Critical
Publication of DE19704351B4 publication Critical patent/DE19704351B4/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The metallic lead frame (1) is coated on one or both sides with a polymeric adhesion promoter (2). Preferably, the polymer is applied by electrodeposition and has openings (3) at contact faces (4) of the lead frame body (1). Also claimed is a mounting preparation process for the above lead frame.

Description

Die Erfindung betrifft ein Leadframe bzw. Montagevorbe­ reitungsverfahren für ein Leadframe.The invention relates to a lead frame or pre-assembly riding process for a leadframe.

Die Herstellung von Halbleiterbauelementen erfolgt heutzutage in der Regel als Massenproduktion. Hierbei wird in der Regel das Funktionselement, nämlich der einzelne Chip, der aus ei­ ner Waferscheibe durch Vereinzeln gewonnen wurde, mit einem sogenannten Leadframe zusammenmontiert. Dabei ist es uner­ heblich, ob der Chip beispielsweise ein Einzeltransistor oder eine integrierte Schaltung ist. Der Leadframe stellt in der Regel eine Auflagefläche für den Chip zur Verfügung, auf der der Chip mittels Diebonden befestigt wird. Weiterhin stellt der Leadframe in der Regel die Anschlußkontakte des Bauele­ mentes für dessen spätere Verwendung dar. Es ist somit zu­ sätzlich noch von den Kontaktstellen eine Verbindung zu den Leadframeteilen notwendig, die die Anschlußkontakte darstel­ len. Hierfür wird häufig ein Drahtbondverfahren verwendet. Nachdem das Bauelement wie zuvor beschrieben vormontiert ist, erfolgt in der Regel ein Umschließen des Chips mit einem Du­ roplasten oder einem Thermoplasten. Dieses Umschließen er­ folgt in der Regel innerhalb einer Form, in der das vormon­ tierte Bauelement angeordnet ist, wobei der Duroplast oder Thermoplast als Preßmasse in diese Form eingeführt wird. Nach dem Erstarren dieser Preßmasse stellt diese sodann das Ge­ häuse des Bauteils dar, wobei die zuvorgenannten Kontaktteile des Leadframes aus dem Gehäuse hinausragen.Semiconductor components are manufactured today usually as mass production. This is usually the functional element, namely the single chip made from egg ner wafer was won by singling, with a so-called leadframe assembled together. It is not important significant whether the chip is, for example, a single transistor or is an integrated circuit. The leadframe represents in the Usually a contact surface for the chip is available on the the chip is attached using die-bonding. Furthermore poses the lead frame usually the connection contacts of the component mentes for its later use. It is therefore too a connection from the contact points to the Leadframe parts necessary, which represent the connection contacts len. A wire bonding process is often used for this. After the component is preassembled as described above, the chip is usually wrapped with a you plastics or a thermoplastic. This enclosing he usually follows within a form in which the previous month tated component is arranged, wherein the thermoset or Thermoplastic is introduced as a molding compound in this form. After the solidification of this molding compound is then the Ge housing of the component, the aforementioned contact parts of the leadframe protrude from the housing.

Bei diesem Herstellungsverfahren besteht das Problem, daß es nur schwer zu einer innigen Verbindung zwischen dem Lead­ frame, der in der Regel aus einem metallischen Material be­ steht, und dem Duroplasten bzw. Thermoplasten kommt. Um die­ ses Problem zu umgehen, wird üblicherweise ein Haftmittler in flüssiger Form auf dem Leadframe aufgetragen, nachdem der Chip am Leadframe montiert ist. Als Haftmittler können modi­ fizierte Thiole, Merkaptane und Silane verwendet werden. Die­ ses nachträgliche Auftragen des Haftmittlers ist notwendig, um die Kontaminierung der Stellen zu verhindern, an denen elektrische Verbindungen, wie die zuvor genannten Bondver­ bindungen, zwischen dem Chip und dem Leadframe hergestellt werden müssen.The problem with this manufacturing method is that it difficult to establish an intimate connection between the lead frame, which is usually made of a metallic material stands, and the thermoset or thermoplastic comes. To the  To work around this problem, an adhesive agent is usually in liquid form on the leadframe after the Chip is mounted on the leadframe. Modi Fected thiols, mercaptans and silanes can be used. The Subsequent application of the adhesive is necessary to prevent contamination of the places where electrical connections, such as the aforementioned bondver bindings made between the chip and the leadframe Need to become.

Das Auftragen des Haftmittlers stellt somit einen zusätzli­ chen Prozeßschritt innerhalb des Montagevorganges dar.The application of the adhesive thus represents an additional Chen process step within the assembly process.

Der Erfindung liegt somit die Aufgabe zugrunde, ein Leadframe bzw. ein Montagevorbereitungsverfahren für ein Leadframe vor­ zusehen, bei dem das nachträgliche Auftragen einer Haftmitt­ lerflüssigkeit vermeidbar ist.The invention is therefore based on the object of a lead frame or an assembly preparation process for a leadframe watch the subsequent application of an adhesive lerfluid is avoidable.

Diese Aufgabe wird erfindungsgemäß mit den Mitteln bzw. Maß­ nahmen des Patentanspruchs 1 und 4 gelöst.This object is achieved with the means or measure took claim 1 and 4 solved.

Erfindungsgemäß weist gemäß Patentanspruch 1 der Leadframe einen Polymer als Haftmittler auf, der gemäß Patentanspruch 4 aufgetragen wird. Polymere lassen sich galvanisch auftragen, so daß, da das Leadframematerial sowieso galvanisch zur Vorbehandlung von Kontaktflächen behandelt wird, dieses im fort laufenden Prozeß in der Galvanik mit dem Haftmittler ver­ sehen werden kann. Bei Verwendung beispielsweise der Spotrad- Technik werden dabei die Kontaktflächen abgedeckt.According to the invention, according to claim 1, the lead frame a polymer as an adhesive, which according to claim 4 is applied. Polymers can be applied galvanically, so that since the leadframe material is galvanically anyway Pretreatment of contact surfaces is treated in the ongoing process in electroplating with the adhesive ver can be seen. For example, when using the spot bike Technology, the contact areas are covered.

Auf diese Weise weist das Leadframematerial, das für die Mon­ tage mit dem Chip und dem nachfolgenden Umschließen mit einem Thermoplasten oder Duroplasten vorliegt, bereits einen Haft­ mittler auf, der die Kontaktflächen nicht kontaminiert, so daß beispielsweise Bondverbindungen sicher herzustellen sind und durch den galvanisch aufgetragenen Haftmittler für die Ausbildung einer innigen Verbindung mit dem Gehäusematerial geeignet sind.In this way, the lead frame material, which for the Mon days with the chip and the subsequent wrapping with one Thermoplastics or thermosets already have an adhesive medium, which does not contaminate the contact surfaces, so that, for example, bond connections can be made safely  and by the galvanically applied adhesive for the Form an intimate connection with the housing material are suitable.

Durch das Vorsehen des derart vorbereiteten Leadframemateri­ als ist verhindert, daß der Montageprozeß durch den Prozeß­ schritt des Auftragens einer Haftmittlerflüssigkeit belastet und somit verlangsamt wird.By providing the lead frame material prepared in this way than the assembly process is prevented by the process step of applying an adhesive liquid and is therefore slowed down.

In Fig. 1 ist ein struktureller Aufbau des so hergestellten Leadframe im Querschnitt dargestellt.In Fig. 1, a structural structure of the lead frame thus produced is shown in cross section.

Mit dem Bezugszeichen 1 ist ein Leadframegrundkörper bezeich­ net, der aus metallischem Material besteht. Entsprechend der Darstellung in Fig. 1 ist auf dem Leadframe-Grundkörper 1 eine Polymerschicht 2 angeordnet. Diese Polymerschicht 2 weist eine Ausnehmung 3 auf. In der Ausnehmung 3 befindet sich an der Oberfläche des Leadframe-Grundkörpers 1 eine Kontaktfläche 4. Auf dieser Kontaktfläche 4 kann (in Fig. 1 nicht dargestellt) bereits eine Schicht, beispielsweise Silber, galvanisch aufgetragen sein.With the reference numeral 1 , a lead frame base body is referred to, which consists of metallic material. As shown in FIG. 1, a polymer layer 2 is arranged on the leadframe base body 1 . This polymer layer 2 has a recess 3 . A contact surface 4 is located in the recess 3 on the surface of the leadframe main body 1 . A layer, for example silver, can already be galvanically applied to this contact surface 4 (not shown in FIG. 1).

Der Leadframe-Grundkörper 1 besteht aus einem bandförmigen oder streifenförmigen Material, das in Rollenform vorliegt, wobei auf diesem Streifen nacheinanderfolgend für eine Viel­ zahl von Bauelementen einzelne Leadframezellen angeordnet sind, die nach der Montage des Chips abgetrennt werden. Das Material weist eine übliche Dicke von ca. 0,25 mm auf. In Fig. 2 ist ein Beispiel einer solchen Zelle auf dem bandför­ migen Leadframegrundmaterial dargestellt. Das Material ist mittels eines Walzverfahrens hergestellt und erlangt die in Fig. 2 beispielsweise dargestellte Form durch einen Stanzpro­ zeß. Das so hergestellte Material wird wiederum in Rollenform einer galvanischen Behandlung zugeführt, wo beispielsweise die Kontaktflächen galvanisch versilbert oder vergoldet werden. Um diesen galvanischen Prozeß nur auf einzelne Flächen zu begrenzen, findet hierbei die sogenannte Spotrad- Technik Anwendung. Hierbei wird das Bandmaterial über ein Rad geführt, das nur die zu behandelnden Flächen freigibt und den Rest abdeckt. Die andere Seite wird vollständig abgedeckt. Nunmehr werden die freigelassenen Flächen von einem Elektro­ lyten angeströmt, so daß die galvanische Behandlung erfolgen kann. Auf diese Weise kann, nachdem die Kontaktflächen ent­ sprechend galvanisch behandelt sind, das Bandmaterial einer zweiten galvanischen Behandlung zugeführt werden, wobei nun­ mehr die Kontaktflächen abgedeckt werden und die restliche Leadframeoberfläche galvanisch behandelt wird. Bei diesem galvanischen Schritt wird nunmehr ein Polymer aufgetragen.The leadframe base body 1 consists of a band-shaped or strip-shaped material that is in roll form, with individual strips of leadframe cells being arranged on this strip in succession for a large number of components, which are separated after the assembly of the chip. The material has a usual thickness of approx. 0.25 mm. In FIG. 2, an example of such a cell is shown on the bandför-shaped lead frame base material. The material is produced by means of a rolling process and acquires the shape shown in FIG. 2 by a stamping process. The material produced in this way is in turn supplied to a galvanic treatment in roll form, where, for example, the contact surfaces are galvanically silvered or gold-plated. So-called spot wheel technology is used to limit this galvanic process to individual areas. The strip material is guided over a wheel that only clears the surfaces to be treated and covers the rest. The other side is completely covered. Now the exposed areas are flowed against by an electro lyte, so that the galvanic treatment can take place. In this way, after the contact surfaces have been treated accordingly galvanically, the strip material can be fed to a second galvanic treatment, the contact surfaces now being covered more and the remaining leadframe surface being treated galvanically. A polymer is now applied in this galvanic step.

Je nach Bedarf bleibt es nunmehr freigestellt, ob beide Sei­ ten mit dem Polymer versehen werden sollen oder nicht. Je nachdem muß dafür gesorgt werden, daß die nicht zu behandeln­ den Flächen stets sauber abgedeckt werden. Ist beispielsweise vorgesehen, auf der Rückseite des Leadframes beispielsweise einen Kühlkörper aufzulöten, muß verhindert werden, daß der Polymer auf der Rückseite galvanisch aufgetragen wird. Somit muß die Rückseite stets sauber abgedeckt werden.Depending on the need, it is now optional whether both be or should not be provided with the polymer. Each After that, care must be taken to ensure that they are not treated the surfaces are always covered cleanly. For example provided, for example on the back of the lead frame soldering a heat sink must be prevented that the Polymer is applied galvanically on the back. Consequently the back must always be covered cleanly.

Nach der galvanischen Behandlung wird das Bandmaterial mit den einzelnen Leadframezellen wieder zu einer Rolle aufge­ rollt und der Endmontage zugeführt.After the galvanic treatment, the strip material is included the individual leadframe cells again to a role rolls and the final assembly.

Als geeignete Materialien sind für das galvanische Auftragen von Polymere beispielsweise Harnstoff bzw. Melamin/Formalde­ hydharze zu nennen. Diese sorgen bei duroplastischer Umhül­ lungsmasse mittels reaktiver Gruppen auf der Oberfläche der Beschichtung zur Ausbildung kovalenter Bindung zum Duropla­ sten, so daß eine innige Verbindung zum Duroplasten herstell­ bar ist. Bei der späteren Ausbildung thermoplastischer Ge­ häuse sorgt die beschriebene Beschichtung aufgrund von Iso­ lier- und Oberflächeneigenschaften für eine wesentlich ver­ besserte Adhäsion des Thermoplastens.Suitable materials are for electroplating of polymers, for example urea or melamine / formaldehyde to name hydro resins. These ensure a thermosetting envelope Solution mass by means of reactive groups on the surface of the Coating to form a covalent bond to Duropla Most, so that an intimate connection to the thermoset is cash. In the later training of thermoplastic Ge housing provides the coating described due to Iso  lier- and surface properties for a ver improved adhesion of the thermoplastic.

Claims (6)

1. Leadframe mit einem metallischen Grundkörper (1), der zumindest auf einer Seite mit einem Haftmittler (2) be­ schichtet ist, dadurch gekennzeichnet, daß der Haftmittler (2) ein Polymer ist.1. Leadframe with a metallic base body ( 1 ), which is coated on at least one side with an adhesive ( 2 ) be, characterized in that the adhesive ( 2 ) is a polymer. 2. Leadframe nach Anspruch 1, dadurch gekennzeichnet, daß das Polymer galvanisch aufgetragen ist.2. Leadframe according to claim 1, characterized, that the polymer is applied galvanically. 3. Leadframe nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß der metallische Grundkörper (1) Kontaktflächen (4) auf­ weist, und daß der Haftmittler derart ausgebildet ist, daß er an den Kontaktflächen Aussparungen (3) aufweist.3. Leadframe according to claim 1 or 2, characterized in that the metallic base body ( 1 ) has contact surfaces ( 4 ), and that the adhesive is designed such that it has recesses ( 3 ) on the contact surfaces. 4. Montagevorbereitungsverfahren für Leadframes, bei dem einem metallischen Leadframe-Grundkörper zumindest auf einer Seite ein Polymer als Haftmittler aufgetragen wird.4. Assembly preparation procedure for lead frames, at least in the case of a metallic lead frame base body a polymer is applied as an adhesive on one side. 5. Verfahren nach Anspruch 4, wobei der Polymer galvanisch aufgetragen wird.5. The method of claim 4, wherein the polymer is galvanic is applied. 6. Verfahren nach Anspruch 4 oder 5, wobei beim Auftragen des Haftmittlers Teile des Leadframe-Grundkörpers abgedeckt sind.6. The method according to claim 4 or 5, wherein when applying the Parts of the leadframe main body are covered.
DE19704351A 1997-02-05 1997-02-05 Lead frame and assembly preparation method for a lead frame Expired - Fee Related DE19704351B4 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19704351A DE19704351B4 (en) 1997-02-05 1997-02-05 Lead frame and assembly preparation method for a lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19704351A DE19704351B4 (en) 1997-02-05 1997-02-05 Lead frame and assembly preparation method for a lead frame

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DE19704351A1 true DE19704351A1 (en) 1998-08-06
DE19704351B4 DE19704351B4 (en) 2006-03-30

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019114242A1 (en) * 2019-05-28 2020-12-03 Infineon Technologies Ag METHOD OF PROVIDING COATED LEADFRAMES OR MEASURING AN ADHESIVE FORCE OF AN ENCAPSULATING AGENT ON A LEADFRAME

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3816457A1 (en) * 1988-05-13 1989-11-23 Josowicz Mira METHOD FOR ENCLOSURE ELECTRONIC COMPONENTS
DE4230187A1 (en) * 1991-09-11 1993-03-18 Gold Star Electronics Component having conductors on lead on chip - comprises insulating film on semiconductor chip contg. projections

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4428987A (en) * 1982-04-28 1984-01-31 Shell Oil Company Process for improving copper-epoxy adhesion
JPS62274647A (en) * 1986-05-22 1987-11-28 Toshiba Corp Manufacture of semiconductor device
US5122858A (en) * 1990-09-10 1992-06-16 Olin Corporation Lead frame having polymer coated surface portions
JPH05102374A (en) * 1991-10-11 1993-04-23 Matsushita Electron Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3816457A1 (en) * 1988-05-13 1989-11-23 Josowicz Mira METHOD FOR ENCLOSURE ELECTRONIC COMPONENTS
DE4230187A1 (en) * 1991-09-11 1993-03-18 Gold Star Electronics Component having conductors on lead on chip - comprises insulating film on semiconductor chip contg. projections

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP 05218260 A In: Patent Abstract of Japan, E-1470, Dec. 6, 1993, Vol. 17/No. 657 *
JP 07329104 A samt Abstract *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019114242A1 (en) * 2019-05-28 2020-12-03 Infineon Technologies Ag METHOD OF PROVIDING COATED LEADFRAMES OR MEASURING AN ADHESIVE FORCE OF AN ENCAPSULATING AGENT ON A LEADFRAME

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