DE19731075A1 - Joining workpieces of metal, metalloid and their compounds - Google Patents
Joining workpieces of metal, metalloid and their compoundsInfo
- Publication number
- DE19731075A1 DE19731075A1 DE19731075A DE19731075A DE19731075A1 DE 19731075 A1 DE19731075 A1 DE 19731075A1 DE 19731075 A DE19731075 A DE 19731075A DE 19731075 A DE19731075 A DE 19731075A DE 19731075 A1 DE19731075 A1 DE 19731075A1
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- silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/06—Joining glass to glass by processes other than fusing
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C29/00—Joining metals with the aid of glass
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/003—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
- C04B37/006—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts consisting of metals or metal salts
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
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- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
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- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/04—Ceramic interlayers
- C04B2237/06—Oxidic interlayers
- C04B2237/062—Oxidic interlayers based on silica or silicates
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- C—CHEMISTRY; METALLURGY
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- C04B2237/04—Ceramic interlayers
- C04B2237/08—Non-oxidic interlayers
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/04—Ceramic interlayers
- C04B2237/08—Non-oxidic interlayers
- C04B2237/083—Carbide interlayers, e.g. silicon carbide interlayers
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- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/54—Oxidising the surface before joining
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/60—Forming at the joining interface or in the joining layer specific reaction phases or zones, e.g. diffusion of reactive species from the interlayer to the substrate or from a substrate to the joining interface, carbide forming at the joining interface
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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- H01L2924/097—Glass-ceramics, e.g. devitrified glass
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Abstract
Description
Die Erfindung beschreibt ein Verfahren zum Verbinden von Werkstücken, wobei jedes Werkstück vollständig oder zumindest dessen äußerste Schicht aus einem Material besteht, das ein Metall, ein Halbmetall, vorzugsweise Silizium, oder eine Metall- oder/ und Halbmetallverbindung, vorzugsweise Siliziumdioxid, enthält.The invention describes a method for connecting workpieces, each workpiece completely or at least its outermost layer consists of a material that is preferably a metal, a semi-metal Silicon, or a metal or / and semimetal compound, preferably Contains silicon dioxide.
Insbesondere in der Mikrotechnik sind Werkstücke aus gleichartigen oder verschiedenartigen Materialien miteinander zu verbinden. Oft handelt es sich um mikrostrukturierte Werkstücke aus Materialien wie Silizium, Quarz, Glas oder anderen Metallen, Halbmetallen oder deren Verbindungen. Die Werkstücke dürfen in der Regel keinen Temperaturen ausgesetzt werden, die in der Nähe des Schmelzpunktes bzw. Erweichungspunktes des am niedrigst schmelzenden bzw. erweichenden Materials liegen. Zum einen können durch Verformung Mikrostrukturen beeinträchtigt werden, zum anderen können beim Verbinden von Materialien mit unterschiedlichen Ausdehnungskoeffizienten hohe innere Spannungen in dem fertigen Werkstück auftreten.In micro technology in particular, workpieces are made of similar or to combine different materials. Often it is around micro-structured workpieces made of materials such as silicon, quartz, glass or other metals, semi-metals or their compounds. The As a rule, workpieces must not be exposed to temperatures that near the melting point or softening point of the lowest melting or softening material. For one, can by Deformation microstructures can be affected, on the other hand Joining materials with different coefficients of expansion high internal stresses occur in the finished workpiece.
Bekannt sind Verfahren zum thermischen Verbinden von Werkstücken aus Silikatglas oder Quarzglas (Fluri et al., Anal. Chem. 68 (1996) 428). So wurden zwei Werkstücke aus einem Borosilikatglas bei 650°C verbunden. Zwei Werkstücke aus Quarzglas wurden bei etwa 1000°C über einen Zeitraum von 4 bis 6 Stunden miteinander verbunden. Nachteilig ist jedoch die hohe Temperatur, da viele Materialien zum Ausrichten der Werkstücke sowohl gegeneinander als auch im Ofen nicht verwendet werden können.Methods for the thermal connection of workpieces are known Silicate glass or quartz glass (Fluri et al., Anal. Chem. 68 (1996) 428). So were two workpieces made of borosilicate glass joined at 650 ° C. Two Workpieces made of quartz glass were machined at around 1000 ° C over a period of 4 connected up to 6 hours. However, the high is a disadvantage Temperature as many materials for both aligning the workpieces cannot be used against each other or in the oven.
Nakanishi et al. (Microelectromechanical Systems, Tagungsband 1997, 299) beschreiben ein Verfahren zum Verbinden von zwei dünnen Quarzplatten bei Raumtemperatur. Die gereinigten Oberflächen werden eine Minute mit einer 1%igen Flußsäurelösung angeätzt und anschließend mit Wasser gereinigt. Die zu verbindenden Flächen werden aneinandergebracht und in den Spalt zwischen den beiden Werkstücken eine 1%ige Flußsäurelösung gegeben. Durch Aneinanderpressen der Werkstücke wird eine Verbindung bei Raumtemperatur erzielt. Die Anwendung von Flußsäure ist jedoch mit hohen Vorsichtsmaßnahmen verbunden. Nakanishi et al. (Microelectromechanical Systems, conference proceedings 1997, 299) describe a method for connecting two thin quartz plates Room temperature. The cleaned surfaces are cleaned with a minute Etched 1% hydrofluoric acid solution and then cleaned with water. The Areas to be joined are brought together and into the gap given a 1% hydrofluoric acid solution between the two workpieces. A connection is created by pressing the workpieces together Achieved room temperature. However, the use of hydrofluoric acid is high Precautions connected.
D. Ando et. al. (Microelectromechanical Systems, Tagungsband 1997, 186) beschreiben ein Verfahren zum direkten Verbinden von zwei Werkstücken aus Silikatglas, wobei zwischen die zu verbindenden Flächen keine Hilfsstoffe eingebracht werden. Zunächst werden die gereinigten Oberflächen zur Erhöhung der Hydrophilität behandelt. Anschließend werden die so behandelten Flächen aneinandergebracht und auf Temperaturen zwischen 200°C und 250°C erhitzt. Als entscheidend wird eine geringe Oberflächenrauhigkeit genannt. So weisen mit Alkalien behandelte Flächen wesentlich schlechtere Verbindungseigenschaften auf. Nachteilig sind bei diesem Verfahren eine vorgeschaltete Behandlung der Oberflächen sowie hohe Anforderungen an die Oberflächenrauhigkeit der Werkstücke. Darüberhinaus können andere Materialien, wie beispielsweise Quarz, nicht bei solch niedrigen Temperaturen direkt miteinander verbunden werden.D. Ando et. al. (Microelectromechanical Systems, conference proceedings 1997, 186) describe a method for the direct connection of two workpieces Silicate glass, with no auxiliary materials between the surfaces to be joined be introduced. First, the cleaned surfaces become Treated to increase hydrophilicity. Then they are like this treated surfaces brought together and at temperatures between 200 ° C and 250 ° C heated. A small one will be decisive Called surface roughness. So show areas treated with alkalis much worse connection properties. Disadvantages are this process an upstream treatment of the surfaces as well high demands on the surface roughness of the workpieces. In addition, other materials such as quartz cannot at such low temperatures.
Aufgabe der Erfindung ist es daher, ein Verfahren bereitzustellen, welches sich zum schonenden Verbinden von insbesondere mikrostrukturierten Werkstücken eignet, wobei jedes Werkstück vollständig oder zumindest dessen äußerste Schicht, die die zu verbindende Fläche bildet, unabhängig von den anderen Werkstücken aus einem Material besteht, das ein Metall, ein Halbmetall, vorzugsweise Silizium, oder eine Metall- oder/und Halbmetallverbindung, vorzugsweise Siliziumdioxid, enthält.The object of the invention is therefore to provide a method which can for the gentle connection of particularly micro-structured workpieces is suitable, with each workpiece completely or at least its outermost Layer that forms the surface to be joined, independent of the others Workpieces made of a material that is a metal, a semi-metal, preferably silicon, or a metal or / and semimetal compound, preferably contains silicon dioxide.
Die Aufgabe wird mit einem Verfahren gemäß Patentanspruch 1 gelöst. Vorteilhafte Ausgestaltungen sind in den Unteransprüchen beschrieben.The object is achieved with a method according to claim 1. Advantageous configurations are described in the subclaims.
Mit dem Verfahren lassen sich Werkstücke sowohl aus gleichartigen als auch aus verschiedenartigen Materialien verbinden. Durch den Einsatz von Temperaturen unterhalb der Schmelzpunkte bzw. Erweichungstemperaturen können auch mikrostrukturierte Bauteile schonend miteinander verbunden werden. Beim Einsatz von Materialien mit unterschiedlichen Ausdehnungskoeffizienten können innere Spannungen klein gehalten werden. Des weiteren kommen keine Stoffe wie Flußsäure zum Einsatz, deren Handhabung nur unter hohen Vorsichtsmaßnahmen möglich ist.With the method, workpieces can be made of the same type as well connect from different materials. Through the use of Temperatures below the melting points or softening temperatures can also gently connect micro-structured components become. When using materials with different Expansion coefficients can keep internal stresses low. Furthermore, no substances such as hydrofluoric acid are used, the Handling is only possible with high precautionary measures.
Mit dem Verfahren lassen sich Werkstücke verbinden, von denen ein oder mehrere Werkstücke ein Metall, Halbmetall, vorzugsweise Silizium, oder eine Metall- oder/und Halbmetallverbindung, vorzugsweise Siliziumdioxid, und Siliziumdioxid, aufweisen. Vorteilhafterweise sind die Verbindungen Oxide, Nitride oder Carbide, wie beispielsweise Aluminiumoxid, Magnesiumaluminat, Siliziumdioxid, Siliziumnitrid oder Siliziumcarbid. Besonders geeignete Materialien sind demnach Quarz, Quarzglas, Quarzgut, Silikatgläser und Silikatglas-Keramiken. Die Werkstücke können komplett aus diesen Materialien bestehen. Zumindest sollte deren äußere Schicht, die die zu verbindende Fläche bildet, eines der oben genannten Materialien aufweisen.The process can be used to connect workpieces, one or of which several workpieces a metal, semi-metal, preferably silicon, or one Metal or / and semimetal compound, preferably silicon dioxide, and silicon dioxide. The compounds are advantageously oxides, Nitrides or carbides, such as aluminum oxide, magnesium aluminate, Silicon dioxide, silicon nitride or silicon carbide. Particularly suitable Materials are therefore quartz, quartz glass, quartz material, silicate glasses and Silicate glass ceramics. The workpieces can be made entirely from these materials consist. At the very least, their outer layer should be the one to be joined Surface forms, have one of the above materials.
Es können aber auch Metalle oder Halbmetalle nach diesem Verfahren miteinander verbunden werden, deren äußerste Schicht, die die zu verbindende Fläche bildet, chemisch umgewandelt ist. Beispielsweise eignet sich das Verfahren auch zum Verbinden von Silizium, dessen Oberfläche eine Oxidschicht aufweist.However, metals or semimetals can also be produced by this process be joined together, the outermost layer of which is the one to be joined Surface forms, is chemically converted. For example, this is suitable Process also for connecting silicon, the surface of which a Has oxide layer.
Bevorzugt werden die beiden zu verbindenden Werkstücke einen Zeitraum bei einer Temperatur zwischen 100 und 300°C zusammengehalten. Hierbei werden die beiden Werkstücke vorteilhaft mit einem Druck von 0 bis 10 bar aneinander gepreßt. Als Zeitraum wird eine Dauer von 1 bis 24 Stunden bevorzugt. Vorteilhaft ist es, die beiden Werkstücke im Vakuum, insbesondere kleiner gleich 1 mbar, zusammen zu halten und zu erwärmen.The two workpieces to be connected are preferably used for a period of time a temperature between 100 and 300 ° C held together. Here are the two workpieces advantageously at a pressure of 0 to 10 bar pressed. A period of 1 to 24 hours is preferred as the period. It is advantageous to vacuum the two workpieces, especially smaller ones equal to 1 mbar, hold together and heat.
Auf mindestens eine der zu verbindenden Flächen ist vor dem In-Kontakt- bringen der beiden Werkstücke eine Flüssigkeit aufzubringen. Hierzu eignet sich Wasser, eine wäßrige Lösung einer Base, wie Alkali-, Erdalkalihydroxide oder/und Wasserglas, oder eine wäßrige Lösung einer schwachen oder mittelstarken Säure, wie Borsäure oder/und Phosphorsäure. Das Wasser bzw. die Lösungen können weitere anorganische Stoffe wie Phosphate, vorzugsweise Alkali- oder/und Erdalkaliphosphate, -hydrogenphosphate oder/ und -dihydrogenphosphate enthalten. Bevorzugt wird als wäßrige Lösung einer Base eine Lithium-, Natrium- oder/und Kaliumhydroxidlösung mit einem Gehalt von 0,01 bis 20%, vorteilhaft von 0,1 bis 5%, an Alkalihydroxid verwendet.Before at least one of the surfaces to be connected is bring the two workpieces to apply a liquid. Suitable for this water, an aqueous solution of a base, such as alkali or alkaline earth metal hydroxides or / and water glass, or an aqueous solution of a weak or medium acid, such as boric acid and / or phosphoric acid. The water or the solutions can contain other inorganic substances such as phosphates, preferably alkali or / and alkaline earth phosphates, hydrogen phosphates or / and dihydrogen phosphates. Is preferred as an aqueous solution Base a lithium, sodium or / and potassium hydroxide solution containing from 0.01 to 20%, advantageously from 0.1 to 5%, of alkali metal hydroxide used.
Im folgenden werden beispielhaft Verfahrensparameter aufgeführt, unter denen verschiedene Materialien erfolgreich miteinander verbunden werden konnten. In allen Versuchen wurden die zu verbindenden Flächen in einer heißen Natriumdodecylsulfat-Lösung gereinigt, anschließend mit entionisiertem Wasser bis zur Einstellung eines konstanten Leitwerts gespült. Die Flüssigkeit wurde dadurch auf die Flächen aufgebracht, daß zwei Werkstücke, die aus etwa Quadratzentimeter großen Plättchen bestanden, in einem Flüssigkeitsbad in Kontakt gebracht wurden, anschließend gemeinsam aus dem Bad entfernt und deren freie Oberflächen trockengeblasen wurden. Bei einem Auflagedruck von 0 bis 2,5 bar wurden die Werkstücke zwischen 5 und 30 Stunden auf Temperaturen zwischen 200 und 500°C erhitzt, wobei als Umgebungsdruck in der Regel ein Vakuum von etwa 10_3 mbar eingestellt wurde. Bruchkanten so miteinander verbundener Werkstücke wurden sowohl im Lichtmikroskop als auch im Rasterelektronenmikroskop untersucht und erwiesen sich als homogen ohne erkennbare Grenzschicht zwischen den beiden Werkstücken. Auch mit einer Ultraschallbehandlung in einem Wasserbad konnten die Werkstücke nicht getrennt werden. Verbundene Werkstücke mit einer Kontaktfläche von 150 mm2 hielten einen durch ein 5 kg Gewicht hervorgerufenen Zug sowohl in senkrechter als auch in paralleler Richtung zur Kontaktfläche aus.Process parameters are listed below, under which different materials could be successfully connected. In all experiments, the surfaces to be connected were cleaned in a hot sodium dodecyl sulfate solution, then rinsed with deionized water until a constant conductivity was reached. The liquid was applied to the surfaces by bringing two workpieces, which consisted of platelets approximately square centimeters in size, into contact in a liquid bath, then removed together from the bath and the free surfaces of which were blown dry. At a contact pressure of 0 to 2.5 bar, the workpieces were heated to temperatures between 200 and 500 ° C for between 5 and 30 hours, with a vacuum of about 10 -3 mbar generally being set as the ambient pressure. Fracture edges of workpieces connected in this way were examined both in the light microscope and in the scanning electron microscope and proved to be homogeneous with no recognizable boundary layer between the two workpieces. The workpieces could not be separated even with an ultrasound treatment in a water bath. Connected workpieces with a contact area of 150 mm 2 withstood a pull caused by a 5 kg weight both in the vertical and in the parallel direction to the contact area.
- a) Zum Verbinden von Plättchen aus Borosilikatglas wurde als Flüssigkeit Wasser oder wäßrige Natriumhydroxid-Lösung der Konzentrationen 1%, 2,5%, 5% und 10% aufgebracht. Bei Temperaturen von 250°C und 500 °C sowie unterschiedlichen Kontaktzeiten zwischen 7 und 28 Stunden konnten durchweg gute Ergebnisse erzielt werden, wobei mit den Konzentrationen von 1% und 2,5% etwas bessere Ergebnisse als mit den beiden höheren Konzentrationen erreicht wurden. Die Versuche wurden auch bei Atmosphärendruck mit gutem Resultat durchgeführt.a) For joining plates made of borosilicate glass was used as a liquid Water or aqueous sodium hydroxide solution of concentrations 1%, 2.5%, 5% and 10% applied. At temperatures of 250 ° C and 500 ° C as well different contact times between 7 and 28 hours could be consistently good results are achieved, with concentrations of 1% and 2.5% slightly better results than with the two higher concentrations have been achieved. The tests were also carried out with good at atmospheric pressure Result accomplished.
- b) Ebenfalls konnten zwei Borosilikatglas-Plättchen mit einer 2,5%igen wäßrigen Borsäurelösung und einer Temperatur von 250°C über 24 Stunden verbunden werden.b) Two borosilicate glass plates with a 2.5% strength could also be used aqueous boric acid solution and a temperature of 250 ° C over 24 hours get connected.
Ein Quarzglas-Plättchen konnte mit einem Borosilikatglas-Plättchen mit Wasser bei einer Temperatur von 250°C und Kontaktzeiten zwischen 10 und 24 Stunden homogen verbunden werden.A quartz glass plate could with a borosilicate glass plate with water at a temperature of 250 ° C and contact times between 10 and 24 Hours homogeneously connected.
Ein Quarzglas-Plättchen wurde mit einem Plättchen aus einem silberhaltigen fotostrukturierbaren Glas unter Verwendung einer 2,5%igen Dinatriumhydrogenphosphatlösung, einer Temperatur von 250°C und einer Dauer von 20 Stunden verbunden.A quartz glass plate was made with a plate made of a silver one photostructurable glass using a 2.5% Disodium hydrogen phosphate solution, a temperature of 250 ° C and one Connected for 20 hours.
Zwei Quarzglas-Plättchen konnten sowohl mit einer 2,5%igen wäßrigen Dinatriumhydrogenphosphatlösung als auch mit wäßrigen Natriumhydroxidlösungen der Gehalte 1%, 2,5%, 5% und 10% und Kontaktzeiten zwischen 7 und 28 Stunden gut miteinander verbunden werden.Two quartz glass plates could both be used with a 2.5% aqueous solution Disodium hydrogen phosphate solution as well as with aqueous Sodium hydroxide solutions of 1%, 2.5%, 5% and 10% and Contact times between 7 and 28 hours can be well connected.
Ein Silizium-Plättchen wurde mit einem Borosilikatglas-Plättchen unter Verwendung von Wasser bzw. einer wäßrigen Borsäurelösung mit einem Gehalt von 1% und 2,5% bei einer Temperatur von 250°C und einer Dauer von 3 Stunden verbunden.A silicon wafer was covered with a borosilicate glass wafer Use of water or an aqueous boric acid solution with a Content of 1% and 2.5% at a temperature of 250 ° C and a duration of 3 hours connected.
Ein Silizium-Plättchen konnte mit einem Plättchen aus Magnesiumaluminat (Spinell) mit einer 2,5% Natriumhydroxidlösung bei einer Temperatur von 250°C und einer Kontaktzeit von 20 Stunden homogen verbunden werden.A silicon plate could with a plate made of magnesium aluminate (Spinel) with a 2.5% sodium hydroxide solution at a temperature of 250 ° C and a contact time of 20 hours can be homogeneously combined.
Zwei Silizium-Plättchen, deren zu verbindende Oberflächen thermisch oxidiert waren, konnten unter Verwendung einer 2,5%igen Natriumhydroxidlösung bei 250°C und einer Dauer von 3 Stunden miteinander verbunden werden.Two silicon wafers whose surfaces to be bonded are thermally oxidized using a 2.5% sodium hydroxide solution 250 ° C and a duration of 3 hours.
Claims (24)
daß auf mindestens eine der zu verbindenden Flächen eine Flüssigkeit aufgebracht wird, die aus Wasser, einer wäßrigen Lösung einer Base oder einer wäßrigen Lösung einer schwachen oder mittelstarken Säure besteht, wobei gegebenenfalls ein oder mehrere weitere anorganisch chemische Stoffe enthalten sind, und
daß die zu verbindenden Flächen der beiden Werkstücke miteinander in Kontakt gebracht werden, und
daß die beiden Werkstücke über einen Zeitraum bei einer Temperatur von 50°C bis zur niedrigsten Schmelztemperatur bzw. Erweichungstemperatur der in den Werkstücken vorliegenden Materialien, jedoch maximal bis 600°C, zusammengehalten werden.1. A method for connecting two or more workpieces, wherein each workpiece completely or at least its outermost layer, which forms the surface to be joined, independently of the other workpieces, consists of a material which is a metal, a semimetal, preferably silicon, or a Contains metal or / and semimetal compound, preferably silicon dioxide, characterized in that
that a liquid is applied to at least one of the surfaces to be joined, which liquid consists of water, an aqueous solution of a base or an aqueous solution of a weak or medium-strong acid, optionally containing one or more further inorganic chemical substances, and
that the surfaces to be joined of the two workpieces are brought into contact with one another, and
that the two workpieces are held together over a period of time at a temperature of 50 ° C to the lowest melting temperature or softening temperature of the materials present in the workpieces, but up to a maximum of 600 ° C.
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DE19731075A DE19731075A1 (en) | 1997-07-19 | 1997-07-19 | Joining workpieces of metal, metalloid and their compounds |
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DE19731075A DE19731075A1 (en) | 1997-07-19 | 1997-07-19 | Joining workpieces of metal, metalloid and their compounds |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19850041A1 (en) * | 1998-10-30 | 2000-05-04 | Festo Ag & Co | Bonding of micro-bodies for a micro-system, has adhesive in the form of adhesive threads laid at the bonding surfaces to be activated by heat when the bodies are pressed together |
WO2001032580A2 (en) * | 1999-11-01 | 2001-05-10 | Schott Glass Technologies, Inc. | Low temperature joining of materials |
WO2001098225A1 (en) * | 2000-06-20 | 2001-12-27 | Schott Glass Technologies, Inc. | Glass ceramic composites |
WO2003087006A1 (en) * | 2002-04-08 | 2003-10-23 | Corning Incorporated | Direct bonding methods using lithium |
WO2003093896A1 (en) | 2002-05-02 | 2003-11-13 | Corning Incorporated | Optical isolators and methods of manufacturing using direct bonding |
US6791748B2 (en) | 2002-05-02 | 2004-09-14 | Corning Incorporated | Optical isolators and methods of manufacture |
US6814833B2 (en) | 2001-10-26 | 2004-11-09 | Corning Incorporated | Direct bonding of articles containing silicon |
US6836602B2 (en) | 2001-10-26 | 2004-12-28 | Corning Incorporated | Direct bonding of optical components |
DE102010016908A1 (en) * | 2010-05-11 | 2011-11-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Process for the silicatic bonding of coated and uncoated optical bodies |
-
1997
- 1997-07-19 DE DE19731075A patent/DE19731075A1/en not_active Withdrawn
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19850041A1 (en) * | 1998-10-30 | 2000-05-04 | Festo Ag & Co | Bonding of micro-bodies for a micro-system, has adhesive in the form of adhesive threads laid at the bonding surfaces to be activated by heat when the bodies are pressed together |
WO2001032580A2 (en) * | 1999-11-01 | 2001-05-10 | Schott Glass Technologies, Inc. | Low temperature joining of materials |
WO2001032580A3 (en) * | 1999-11-01 | 2002-01-24 | Schott Glass Tech Inc | Low temperature joining of materials |
US6652972B1 (en) | 1999-11-01 | 2003-11-25 | Schott Glass Technologies Inc. | Low temperature joining of phosphate glass |
WO2001098225A1 (en) * | 2000-06-20 | 2001-12-27 | Schott Glass Technologies, Inc. | Glass ceramic composites |
US6699341B2 (en) | 2000-06-20 | 2004-03-02 | Schott Glas | Process for the fabrication of glass ceramic structures |
US6814833B2 (en) | 2001-10-26 | 2004-11-09 | Corning Incorporated | Direct bonding of articles containing silicon |
US6949164B2 (en) | 2001-10-26 | 2005-09-27 | Corning Incorporated | Direct bonding of articles containing silicon |
US6836602B2 (en) | 2001-10-26 | 2004-12-28 | Corning Incorporated | Direct bonding of optical components |
WO2003087006A1 (en) * | 2002-04-08 | 2003-10-23 | Corning Incorporated | Direct bonding methods using lithium |
US6791748B2 (en) | 2002-05-02 | 2004-09-14 | Corning Incorporated | Optical isolators and methods of manufacture |
US6950235B2 (en) | 2002-05-02 | 2005-09-27 | Corning Incorporated | Optical isolators and methods of manufacture |
WO2003093896A1 (en) | 2002-05-02 | 2003-11-13 | Corning Incorporated | Optical isolators and methods of manufacturing using direct bonding |
DE102010016908A1 (en) * | 2010-05-11 | 2011-11-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Process for the silicatic bonding of coated and uncoated optical bodies |
US9233873B2 (en) | 2010-05-11 | 2016-01-12 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Method for the siliceous bonding of coated and uncoated optical bodies |
DE102010016908B4 (en) | 2010-05-11 | 2021-11-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Process for the silicate bonding of coated and uncoated optical bodies |
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