DE19983631T1 - Verfahren und System zur Reinigung und Dampftrocknung von Wafern - Google Patents

Verfahren und System zur Reinigung und Dampftrocknung von Wafern

Info

Publication number
DE19983631T1
DE19983631T1 DE19983631T DE19983631T DE19983631T1 DE 19983631 T1 DE19983631 T1 DE 19983631T1 DE 19983631 T DE19983631 T DE 19983631T DE 19983631 T DE19983631 T DE 19983631T DE 19983631 T1 DE19983631 T1 DE 19983631T1
Authority
DE
Germany
Prior art keywords
cleaning
steam drying
drying wafers
wafers
steam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19983631T
Other languages
English (en)
Inventor
Elsawy Tamer
R Mark Hall
Josh Butler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SCO Global Technologies Inc
Original Assignee
SCP Global Technologies
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SCP Global Technologies filed Critical SCP Global Technologies
Publication of DE19983631T1 publication Critical patent/DE19983631T1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
DE19983631T 1998-10-09 1999-09-28 Verfahren und System zur Reinigung und Dampftrocknung von Wafern Withdrawn DE19983631T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10380298P 1998-10-09 1998-10-09
US09/227,637 US6328809B1 (en) 1998-10-09 1999-01-08 Vapor drying system and method
PCT/US1999/022483 WO2000022654A1 (en) 1998-10-09 1999-09-28 Wafer cleaning and vapor drying system and method

Publications (1)

Publication Number Publication Date
DE19983631T1 true DE19983631T1 (de) 2003-03-27

Family

ID=26800867

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19983631T Withdrawn DE19983631T1 (de) 1998-10-09 1999-09-28 Verfahren und System zur Reinigung und Dampftrocknung von Wafern

Country Status (8)

Country Link
US (2) US6328809B1 (de)
KR (1) KR20010089292A (de)
CN (1) CN1179394C (de)
AU (1) AU6271599A (de)
DE (1) DE19983631T1 (de)
MY (1) MY126419A (de)
TW (1) TW519564B (de)
WO (1) WO2000022654A1 (de)

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JP4884180B2 (ja) * 2006-11-21 2012-02-29 東京エレクトロン株式会社 基板処理装置および基板処理方法
CN101329134B (zh) * 2007-06-18 2012-05-23 中芯国际集成电路制造(上海)有限公司 晶片的干燥方法
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CN101718487B (zh) * 2009-12-04 2013-07-31 有研半导体材料股份有限公司 一种硅片清洗后的快速干燥方法和装置
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CN102809264A (zh) * 2011-06-01 2012-12-05 微宏动力系统（湖州）有限公司 用于锂离子电池制造的干燥方法
JP5678858B2 (ja) * 2011-09-29 2015-03-04 東京エレクトロン株式会社 基板処理装置
CN102496590B (zh) * 2011-12-22 2015-04-22 浙江金瑞泓科技股份有限公司 带超声或兆声振子的异丙醇干燥机
JP5837829B2 (ja) * 2012-01-11 2015-12-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN103871843A (zh) * 2014-03-28 2014-06-18 武汉新芯集成电路制造有限公司 改善化学酸液清洗工艺造成缺陷的方法
CN103994637B (zh) * 2014-05-22 2016-04-13 京东方科技集团股份有限公司 一种基板干燥装置及基板干燥方法
TWI620237B (zh) * 2015-01-16 2018-04-01 弘塑科技股份有限公司 整合水分去除與乾燥之處理設備及半導體晶圓之處理方法
CN104766814A (zh) * 2015-03-31 2015-07-08 上海华力微电子有限公司 一种防止湿法清洗工艺中自然氧化膜生长的装置及方法
JP6489524B2 (ja) * 2015-08-18 2019-03-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6881922B2 (ja) * 2016-09-12 2021-06-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US11923210B2 (en) * 2018-08-30 2024-03-05 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for in-situ Marangoni cleaning
JP7355615B2 (ja) * 2019-11-25 2023-10-03 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法
US11515178B2 (en) 2020-03-16 2022-11-29 Tokyo Electron Limited System and methods for wafer drying
CN113418383B (zh) * 2021-06-24 2022-05-17 长沙韶光铬版有限公司 一种铬版湿法清洗工艺干燥用异丙醇蒸汽回流装置
CN116013804A (zh) * 2021-10-22 2023-04-25 长鑫存储技术有限公司 清洗装置及其清洗方法

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Also Published As

Publication number Publication date
US20010037822A1 (en) 2001-11-08
US6328809B1 (en) 2001-12-11
TW519564B (en) 2003-02-01
WO2000022654A1 (en) 2000-04-20
KR20010089292A (ko) 2001-09-29
CN1179394C (zh) 2004-12-08
CN1329748A (zh) 2002-01-02
MY126419A (en) 2006-09-29
AU6271599A (en) 2000-05-01

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