DE2951287C2 - - Google Patents

Info

Publication number
DE2951287C2
DE2951287C2 DE2951287A DE2951287A DE2951287C2 DE 2951287 C2 DE2951287 C2 DE 2951287C2 DE 2951287 A DE2951287 A DE 2951287A DE 2951287 A DE2951287 A DE 2951287A DE 2951287 C2 DE2951287 C2 DE 2951287C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2951287A
Other versions
DE2951287A1 (de
Inventor
Reimar 6100 Darmstadt De Spohr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GESELLSCHAFT fur SCHWERIONENFORSCHUNG MBH 6100 DARMSTADT DE
Original Assignee
GESELLSCHAFT fur SCHWERIONENFORSCHUNG MBH 6100 DARMSTADT DE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GESELLSCHAFT fur SCHWERIONENFORSCHUNG MBH 6100 DARMSTADT DE filed Critical GESELLSCHAFT fur SCHWERIONENFORSCHUNG MBH 6100 DARMSTADT DE
Priority to DE19792951287 priority Critical patent/DE2951287A1/de
Priority to US06/219,350 priority patent/US4338164A/en
Publication of DE2951287A1 publication Critical patent/DE2951287A1/de
Application granted granted Critical
Publication of DE2951287C2 publication Critical patent/DE2951287C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S205/00—Electrolysis: processes, compositions used therein, and methods of preparing the compositions
    • Y10S205/918—Use of wave energy or electrical discharge during pretreatment of substrate or post-treatment of coating
DE19792951287 1979-12-20 1979-12-20 Verfahren zur herstellung von ebenen oberflaechen mit feinsten spitzen im mikrometer-bereich Granted DE2951287A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE19792951287 DE2951287A1 (de) 1979-12-20 1979-12-20 Verfahren zur herstellung von ebenen oberflaechen mit feinsten spitzen im mikrometer-bereich
US06/219,350 US4338164A (en) 1979-12-20 1980-12-22 Method for producing planar surfaces having very fine peaks in the micron range

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792951287 DE2951287A1 (de) 1979-12-20 1979-12-20 Verfahren zur herstellung von ebenen oberflaechen mit feinsten spitzen im mikrometer-bereich

Publications (2)

Publication Number Publication Date
DE2951287A1 DE2951287A1 (de) 1981-07-02
DE2951287C2 true DE2951287C2 (de) 1987-01-02

Family

ID=6088995

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19792951287 Granted DE2951287A1 (de) 1979-12-20 1979-12-20 Verfahren zur herstellung von ebenen oberflaechen mit feinsten spitzen im mikrometer-bereich

Country Status (2)

Country Link
US (1) US4338164A (de)
DE (1) DE2951287A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4209301C1 (en) * 1992-03-21 1993-08-19 Gesellschaft Fuer Schwerionenforschung Mbh, 6100 Darmstadt, De Manufacture of controlled field emitter for flat display screen, TV etc. - using successive etching and deposition stages to form cone shaped emitter peak set in insulating matrix together with electrodes

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3316027A1 (de) * 1983-05-03 1984-11-08 Dornier System Gmbh, 7990 Friedrichshafen Photodetektor
DE3337049A1 (de) * 1983-10-12 1985-05-09 Gesellschaft für Schwerionenforschung mbH, 6100 Darmstadt Feststoff mit besonderen elektrischen eigenschaften und verfahren zur herstellung eines solchen feststoffes
EP0238694B1 (de) * 1986-03-27 1992-01-29 Ibm Deutschland Gmbh Verfahren zur Herstellung identisch angeordneter Ausrichtmarkierungen auf gegenüberliegenden Seiten einer Halbleiterscheibe
GB8816689D0 (en) * 1988-07-13 1988-08-17 Emi Plc Thorn Method of manufacturing cold cathode field emission device & field emission device manufactured by method
US5019003A (en) * 1989-09-29 1991-05-28 Motorola, Inc. Field emission device having preformed emitters
CA2085982C (en) * 1990-07-18 1999-03-09 Stephen Michael Zimmerman Structures and processes for fabricating field emission cathodes
US5334908A (en) * 1990-07-18 1994-08-02 International Business Machines Corporation Structures and processes for fabricating field emission cathode tips using secondary cusp
US5141459A (en) * 1990-07-18 1992-08-25 International Business Machines Corporation Structures and processes for fabricating field emission cathodes
US5192588A (en) * 1991-03-05 1993-03-09 Harris Corporation Electroformed method for fabricating round mesa millimeter wave waffleline structure
US5430300A (en) * 1991-07-18 1995-07-04 The Texas A&M University System Oxidized porous silicon field emission devices
US5564959A (en) * 1993-09-08 1996-10-15 Silicon Video Corporation Use of charged-particle tracks in fabricating gated electron-emitting devices
US7025892B1 (en) 1993-09-08 2006-04-11 Candescent Technologies Corporation Method for creating gated filament structures for field emission displays
US5559389A (en) * 1993-09-08 1996-09-24 Silicon Video Corporation Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals
US5462467A (en) * 1993-09-08 1995-10-31 Silicon Video Corporation Fabrication of filamentary field-emission device, including self-aligned gate
US5552659A (en) * 1994-06-29 1996-09-03 Silicon Video Corporation Structure and fabrication of gated electron-emitting device having electron optics to reduce electron-beam divergence
US5608283A (en) * 1994-06-29 1997-03-04 Candescent Technologies Corporation Electron-emitting devices utilizing electron-emissive particles which typically contain carbon
US5726524A (en) * 1996-05-31 1998-03-10 Minnesota Mining And Manufacturing Company Field emission device having nanostructured emitters
US6033583A (en) * 1997-05-05 2000-03-07 The Regents Of The University Of California Vapor etching of nuclear tracks in dielectric materials
US6444256B1 (en) * 1999-11-17 2002-09-03 The Regents Of The University Of California Formation of nanometer-size wires using infiltration into latent nuclear tracks
US20040029413A1 (en) * 2000-10-30 2004-02-12 Norbert Angert Film material comprising spikes and method for the production thereof
DE10058822A1 (de) * 2000-11-27 2002-06-20 Danziger Manfred Verfahren zur Bearbeitung von Trägerfolien durch Bestrahlen mit Schwerionen
DE102006050023B4 (de) * 2006-10-19 2008-11-13 Ist - Ionen Strahl Technologie - Gmbh Verfahren zur Bearbeitung von Material durch Schwerionenbestrahlung und nachfolgenden Ätzprozess

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1248442A (en) * 1916-08-30 1917-12-04 Alonzo L Blalock Differential.
DE2364850A1 (de) * 1972-12-29 1974-07-04 Atomic Energy Of Australia Verfahren zum fotoaetzen und fototiefdrucken unter verwendung von durch spaltbruchstuecken und/oder alphateilchen verursachte strahlen-aetzspuren von getonten fotographien
DE2616662C2 (de) * 1976-04-15 1984-02-02 Dornier System Gmbh, 7990 Friedrichshafen Verfahren zur herstellung einer selektiven solarabsorberschicht auf aluminium
US4114983A (en) * 1977-02-18 1978-09-19 Minnesota Mining And Manufacturing Company Polymeric optical element having antireflecting surface
DE2717400C2 (de) * 1977-04-20 1979-06-21 Gesellschaft Fuer Schwerionenforschung Mbh, 6100 Darmstadt Ätzverfahren zur Herstellung von Strukturen unterschiedlicher Höhe

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4209301C1 (en) * 1992-03-21 1993-08-19 Gesellschaft Fuer Schwerionenforschung Mbh, 6100 Darmstadt, De Manufacture of controlled field emitter for flat display screen, TV etc. - using successive etching and deposition stages to form cone shaped emitter peak set in insulating matrix together with electrodes

Also Published As

Publication number Publication date
US4338164A (en) 1982-07-06
DE2951287A1 (de) 1981-07-02

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee