DE2966433D1 - Method of manufacturing semiconductor laser devices - Google Patents
Method of manufacturing semiconductor laser devicesInfo
- Publication number
- DE2966433D1 DE2966433D1 DE7979901610T DE2966433T DE2966433D1 DE 2966433 D1 DE2966433 D1 DE 2966433D1 DE 7979901610 T DE7979901610 T DE 7979901610T DE 2966433 T DE2966433 T DE 2966433T DE 2966433 D1 DE2966433 D1 DE 2966433D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- manufacturing semiconductor
- laser devices
- devices
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
- H01S5/02484—Sapphire or diamond heat spreaders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53148839A JPS5837713B2 (ja) | 1978-12-01 | 1978-12-01 | 半導体レ−ザ−装置の製造方法 |
PCT/JP1979/000302 WO1980001222A1 (en) | 1978-12-01 | 1979-11-28 | Method of manufacturing semiconductor laser devices |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2966433D1 true DE2966433D1 (en) | 1983-12-29 |
Family
ID=15461880
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE7979901610T Expired DE2966433D1 (en) | 1978-12-01 | 1979-11-28 | Method of manufacturing semiconductor laser devices |
Country Status (5)
Country | Link |
---|---|
US (1) | US4360965A (de) |
EP (1) | EP0019003B1 (de) |
JP (1) | JPS5837713B2 (de) |
DE (1) | DE2966433D1 (de) |
WO (1) | WO1980001222A1 (de) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3132983A1 (de) * | 1981-08-20 | 1983-03-03 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum verbinden eines halbleiterchips mit einem chiptraeger |
JPS5842285A (ja) * | 1981-09-07 | 1983-03-11 | Mitsubishi Electric Corp | 半導体レ−ザ装置の製造方法 |
FR2516703B1 (fr) * | 1981-11-18 | 1986-02-07 | Lucas Ind Plc | Procede de fixation et d'isolation d'un dispositif semi-conducteur sur une plaque de refroidissement |
JPS58145169A (ja) * | 1982-02-23 | 1983-08-29 | Nec Corp | 光半導体装置 |
US4491264A (en) * | 1982-06-01 | 1985-01-01 | Rca Corporation | Method of soldering a light emitting device to a substrate |
GB8328573D0 (en) * | 1983-10-26 | 1983-11-30 | Plessey Co Plc | Diamond heatsink assemblies |
EP0194358B1 (de) * | 1985-01-11 | 1991-10-23 | Sumitomo Electric Industries, Ltd. | Wärmesenke unter Verwendung eines gesinterten Körpers mit hoher Wärmeleitfähigkeit und Verfahren zu ihrer Herstellung |
US5177806A (en) * | 1986-12-05 | 1993-01-05 | E. I. Du Pont De Nemours And Company | Optical fiber feedthrough |
US5373171A (en) * | 1987-03-12 | 1994-12-13 | Sumitomo Electric Industries, Ltd. | Thin film single crystal substrate |
FR2616272B1 (fr) * | 1987-06-02 | 1990-10-26 | Thomson Csf | Dispositif en materiaux semiconducteurs realise sur un substrat de parametre de maille different, application a un laser et procede de realisation |
US4826276A (en) * | 1987-07-17 | 1989-05-02 | E. I. Du Pont De Nemours And Company | Optical fiber feedthrough assembly having a rigidizing arrangement therein |
ATE258686T1 (de) | 1988-04-22 | 2004-02-15 | Bayer Ag | Nachweis, quantifizierung und klassifizierung von ras-proteinen in körperflüssigkeiten und geweben |
JPH0750813B2 (ja) * | 1988-05-23 | 1995-05-31 | 三菱電機株式会社 | 半導体レーザ素子用サブマウント |
JPH03209896A (ja) * | 1990-01-12 | 1991-09-12 | Mitsubishi Electric Corp | 半導体レーザ素子用サブマウント |
US5202288A (en) * | 1990-06-01 | 1993-04-13 | Robert Bosch Gmbh | Method of manufacturing an electronic circuit component incorporating a heat sink |
US5156999A (en) * | 1990-06-08 | 1992-10-20 | Wai-Hon Lee | Packaging method for semiconductor laser/detector devices |
US5197654A (en) * | 1991-11-15 | 1993-03-30 | Avishay Katz | Bonding method using solder composed of multiple alternating gold and tin layers |
DE4206437A1 (de) * | 1992-02-29 | 1993-09-16 | Telefunken Microelectron | Halbleiter-baugruppe |
US5324387A (en) * | 1993-05-07 | 1994-06-28 | Xerox Corporation | Method of fabricating asymmetric closely-spaced multiple diode lasers |
DE19536434C2 (de) * | 1995-09-29 | 2001-11-15 | Siemens Ag | Verfahren zum Herstellen eines Halbleiterlaser-Bauelements |
US5628196A (en) * | 1995-11-22 | 1997-05-13 | Loral Electro-Optical Systems, Inc. | Cryogenic cooling apparatus employing heat sink and diffuser plate for cooling small objects |
US6027957A (en) * | 1996-06-27 | 2000-02-22 | University Of Maryland | Controlled solder interdiffusion for high power semiconductor laser diode die bonding |
US6281574B1 (en) * | 1999-09-27 | 2001-08-28 | Raytheon Company | High power microwave transistor amplifier |
US7339791B2 (en) | 2001-01-22 | 2008-03-04 | Morgan Advanced Ceramics, Inc. | CVD diamond enhanced microprocessor cooling system |
US7453100B2 (en) * | 2001-08-28 | 2008-11-18 | The Furukawa Electric Co., Ltd. | DFB laser assembly and laser module |
JP2004235534A (ja) * | 2003-01-31 | 2004-08-19 | Fuji Photo Film Co Ltd | レーザ素子およびそのレーザ素子の製造方法並びにそのレーザ素子を用いたレーザモジュール |
EP1575089B1 (de) * | 2004-03-09 | 2007-11-14 | Infineon Technologies AG | Hochzuverlässige, kostengünstige und thermisch verbesserte Halbleiterchip-Befestigungstechnologie mit AuSn |
JP4341693B2 (ja) * | 2007-05-16 | 2009-10-07 | ウシオ電機株式会社 | Led素子およびその製造方法 |
JP2010027645A (ja) * | 2008-07-15 | 2010-02-04 | Ushio Inc | 発光装置及び発光装置の製造方法 |
KR101266205B1 (ko) * | 2008-07-08 | 2013-05-21 | 우시오덴키 가부시키가이샤 | 발광 장치 및 발광 장치의 제조 방법 |
KR101266226B1 (ko) * | 2008-07-09 | 2013-05-21 | 우시오덴키 가부시키가이샤 | 발광 장치 및 발광 장치의 제조 방법 |
CN103904172A (zh) * | 2014-03-19 | 2014-07-02 | 浙江竞达齐泰科技有限公司 | 一种陶瓷体上常温超声波焊接led芯片的方法 |
JP6367980B2 (ja) * | 2014-06-18 | 2018-08-01 | エレメント シックス テクノロジーズ リミテッド | 一体型のダイヤモンドヒートスプレッダを有する電子デバイス構成要素 |
JP6652856B2 (ja) * | 2016-02-25 | 2020-02-26 | 株式会社フジクラ | 半導体レーザモジュール及びその製造方法 |
CN112967957B (zh) * | 2021-02-07 | 2022-04-01 | 深圳市东飞凌科技有限公司 | 共晶装置及晶体管封装共晶系统 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3256465A (en) * | 1962-06-08 | 1966-06-14 | Signetics Corp | Semiconductor device assembly with true metallurgical bonds |
GB1079033A (en) * | 1963-06-05 | 1967-08-09 | Nat Res Dev | Semiconductor diode construction |
US3396454A (en) * | 1964-01-23 | 1968-08-13 | Allis Chalmers Mfg Co | Method of forming ohmic contacts in semiconductor devices |
ES374318A1 (es) * | 1968-12-10 | 1972-03-16 | Matsushita Electronics Corp | Un metodo de fabricar un dispositivo semiconductor sensiblea la presion. |
US3769694A (en) * | 1970-12-28 | 1973-11-06 | Gen Electric | Ohmic contact for group iii-v p-type semiconductors |
BE791929A (fr) * | 1971-12-02 | 1973-03-16 | Western Electric Co | Procede de fabrication de regions isolantes dans un corps de semi-conducteur |
JPS49131863U (de) * | 1973-03-10 | 1974-11-13 | ||
JPS556315B2 (de) * | 1973-08-20 | 1980-02-15 | ||
US3922775A (en) * | 1973-09-13 | 1975-12-02 | Sperry Rand Corp | High frequency diode and manufacture thereof |
US3893229A (en) * | 1973-10-29 | 1975-07-08 | Gen Electric | Mounting for light-emitting diode pellet and method for the fabrication thereof |
US3946334A (en) * | 1973-11-14 | 1976-03-23 | Nippon Electric Company, Limited | Injection semiconductor laser device |
JPS606117B2 (ja) * | 1974-10-05 | 1985-02-15 | 日本電気株式会社 | 注入型半導体発光素子 |
JPS51102565A (de) * | 1975-03-07 | 1976-09-10 | Hitachi Ltd | |
JPS5311591A (en) * | 1976-07-19 | 1978-02-02 | Sharp Corp | Semiconductor laser device |
US4076853A (en) * | 1977-02-04 | 1978-02-28 | International Flavors & Fragrances Inc. | Flavoring with substituted norbornane derivatives |
JPS5385160A (en) * | 1976-12-31 | 1978-07-27 | Fujitsu Ltd | Production of semiconductor device |
-
1978
- 1978-12-01 JP JP53148839A patent/JPS5837713B2/ja not_active Expired
-
1979
- 1979-11-28 WO PCT/JP1979/000302 patent/WO1980001222A1/ja unknown
- 1979-11-28 DE DE7979901610T patent/DE2966433D1/de not_active Expired
- 1979-11-28 US US06/202,438 patent/US4360965A/en not_active Expired - Lifetime
-
1980
- 1980-06-17 EP EP79901610A patent/EP0019003B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0019003A1 (de) | 1980-11-26 |
JPS5575282A (en) | 1980-06-06 |
JPS5837713B2 (ja) | 1983-08-18 |
EP0019003A4 (de) | 1981-04-24 |
EP0019003B1 (de) | 1983-11-23 |
US4360965A (en) | 1982-11-30 |
WO1980001222A1 (en) | 1980-06-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |