DE2966634D1 - Monolithic distributed resistor-capacitor device utilizing polycrystalline semiconductor material - Google Patents

Monolithic distributed resistor-capacitor device utilizing polycrystalline semiconductor material

Info

Publication number
DE2966634D1
DE2966634D1 DE7979303037T DE2966634T DE2966634D1 DE 2966634 D1 DE2966634 D1 DE 2966634D1 DE 7979303037 T DE7979303037 T DE 7979303037T DE 2966634 T DE2966634 T DE 2966634T DE 2966634 D1 DE2966634 D1 DE 2966634D1
Authority
DE
Germany
Prior art keywords
semiconductor material
polycrystalline semiconductor
device utilizing
capacitor device
distributed resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE7979303037T
Other languages
English (en)
Inventor
Levy Gerzberg
James D Meindl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Leland Stanford Junior University
Original Assignee
Leland Stanford Junior University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leland Stanford Junior University filed Critical Leland Stanford Junior University
Application granted granted Critical
Publication of DE2966634D1 publication Critical patent/DE2966634D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
    • H01L27/0794—Combinations of capacitors and resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
DE7979303037T 1978-12-26 1979-12-21 Monolithic distributed resistor-capacitor device utilizing polycrystalline semiconductor material Expired DE2966634D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/972,738 US4285001A (en) 1978-12-26 1978-12-26 Monolithic distributed resistor-capacitor device and circuit utilizing polycrystalline semiconductor material

Publications (1)

Publication Number Publication Date
DE2966634D1 true DE2966634D1 (en) 1984-03-08

Family

ID=25520053

Family Applications (1)

Application Number Title Priority Date Filing Date
DE7979303037T Expired DE2966634D1 (en) 1978-12-26 1979-12-21 Monolithic distributed resistor-capacitor device utilizing polycrystalline semiconductor material

Country Status (5)

Country Link
US (1) US4285001A (de)
EP (2) EP0013173B1 (de)
JP (1) JPS5591154A (de)
CA (1) CA1128672A (de)
DE (1) DE2966634D1 (de)

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US4370798A (en) * 1979-06-15 1983-02-01 Texas Instruments Incorporated Interlevel insulator for integrated circuit with implanted resistor element in second-level polycrystalline silicon
US4399417A (en) * 1980-06-06 1983-08-16 Bell Telephone Laboratories, Incorporated Integrated CRC filter circuit
JPS57133712A (en) * 1981-02-12 1982-08-18 Fujitsu Ltd Constituting method of delay circuit in master slice ic
JPS57196627A (en) * 1981-05-29 1982-12-02 Hitachi Ltd Electronic circuit device
US4641165A (en) * 1982-04-28 1987-02-03 Tokyo Shibaura Denki Kabushiki Kaisha Dynamic memory device with an RC circuit for inhibiting the effects of alpha particle radiation
JPS5928370A (ja) * 1982-08-09 1984-02-15 Toshiba Corp 半導体装置
JPS6080264A (ja) * 1983-10-07 1985-05-08 Toshiba Corp 半導体装置
JPS61174744A (ja) * 1985-01-30 1986-08-06 Nec Corp 集積回路装置およびその製造方法
US5367208A (en) * 1986-09-19 1994-11-22 Actel Corporation Reconfigurable programmable interconnect architecture
DE3714672A1 (de) * 1987-05-02 1988-11-17 Telefunken Electronic Gmbh Rc-leitung
JP2615151B2 (ja) * 1988-08-19 1997-05-28 株式会社村田製作所 チップ型コイル及びその製造方法
FR2705833B1 (fr) * 1993-05-28 1995-06-30 Sgs Thomson Microelectronics Circuit intégré du type à résistance, capacité et transistor, procédé de fabrication d'un tel circuit intégré et application à un oscillateur.
US5801065A (en) * 1994-02-03 1998-09-01 Universal Semiconductor, Inc. Structure and fabrication of semiconductor device having merged resistive/capacitive plate and/or surface layer that provides ESD protection
EP0860050A1 (de) * 1996-08-29 1998-08-26 Koninklijke Philips Electronics N.V. Frequenzunabhängiger spannungsteiler
JP4032459B2 (ja) 1997-08-05 2008-01-16 株式会社デンソー 混成集積回路用基板及びその製造方法
DE19962028A1 (de) * 1999-12-22 2001-06-28 Philips Corp Intellectual Pty Filteranordnung
US6958523B2 (en) * 2000-09-15 2005-10-25 Texas Instruments Incorporated On chip heating for electrical trimming of polysilicon and polysilicon-silicon-germanium resistors and electrically programmable fuses for integrated circuits
US7422972B2 (en) * 2001-09-07 2008-09-09 Texas Instruments Incorporated On chip heating for electrical trimming of polysilicon and polysilicon-silicon-germanium resistors and electrically programmable fuses for integrated circuits
EP1560269A1 (de) * 2004-01-30 2005-08-03 Alcatel MOS-Kondensator in einer integrierten Halbleiterschaltung
KR100593444B1 (ko) * 2004-02-12 2006-06-28 삼성전자주식회사 모오스 바렉터를 갖는 반도체소자 및 그것을 제조하는 방법
US7855422B2 (en) * 2006-05-31 2010-12-21 Alpha & Omega Semiconductor, Ltd. Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process
WO2022182620A1 (en) * 2021-02-26 2022-09-01 KYOCERA AVX Components Corporation High frequency and high power thin-film component

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB945740A (de) * 1959-02-06 Texas Instruments Inc
US3115581A (en) * 1959-05-06 1963-12-24 Texas Instruments Inc Miniature semiconductor integrated circuit
NL257364A (de) * 1960-01-27
US3384829A (en) * 1963-02-08 1968-05-21 Nippon Electric Co Semiconductor variable capacitance element
US3714522A (en) * 1968-11-14 1973-01-30 Kogyo Gijutsuin Agency Of Ind Semiconductor device having surface electric-field effect
US3576478A (en) * 1969-07-22 1971-04-27 Philco Ford Corp Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode
US3829743A (en) * 1969-09-18 1974-08-13 Matsushita Electric Ind Co Ltd Variable capacitance device
US3621407A (en) * 1970-02-27 1971-11-16 Nasa Multiloop rc active filter apparatus having low-parameter sensitivity with low-amplifier gain
US3700976A (en) * 1970-11-02 1972-10-24 Hughes Aircraft Co Insulated gate field effect transistor adapted for microwave applications
US3890698A (en) * 1971-11-01 1975-06-24 Motorola Inc Field shaping layer for high voltage semiconductors
US3792384A (en) * 1972-01-24 1974-02-12 Motorola Inc Controlled loss capacitor
JPS5513426B2 (de) * 1974-06-18 1980-04-09
JPS5513433B2 (de) * 1974-08-29 1980-04-09
DE2556696A1 (de) * 1975-12-17 1977-06-30 Renz Hans Werner Dipl Ing Verfahren zur herstellung von verteilten rc-elementen in duennschichttechnik
US4092619A (en) * 1976-12-27 1978-05-30 Intel Corporation Mos voltage controlled lowpass filter

Also Published As

Publication number Publication date
EP0013173A2 (de) 1980-07-09
EP0013173B1 (de) 1984-02-01
US4285001A (en) 1981-08-18
CA1128672A (en) 1982-07-27
JPS5591154A (en) 1980-07-10
EP0013173A3 (en) 1980-10-29
EP0051902A1 (de) 1982-05-19

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee