DE3071853D1 - Sensing system for a capacitive semiconductor memory - Google Patents

Sensing system for a capacitive semiconductor memory

Info

Publication number
DE3071853D1
DE3071853D1 DE8080107619T DE3071853T DE3071853D1 DE 3071853 D1 DE3071853 D1 DE 3071853D1 DE 8080107619 T DE8080107619 T DE 8080107619T DE 3071853 T DE3071853 T DE 3071853T DE 3071853 D1 DE3071853 D1 DE 3071853D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
sensing system
capacitive semiconductor
capacitive
sensing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080107619T
Other languages
English (en)
Inventor
Satya Narayan Chakravarti
Lawrence Griffith Heller
Wilbur David Pricer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3071853D1 publication Critical patent/DE3071853D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/565—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using capacitive charge storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/34—Digital stores in which the information is moved stepwise, e.g. shift registers using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C19/36—Digital stores in which the information is moved stepwise, e.g. shift registers using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using multistable semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
DE8080107619T 1979-12-27 1980-12-04 Sensing system for a capacitive semiconductor memory Expired DE3071853D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/108,242 US4300210A (en) 1979-12-27 1979-12-27 Calibrated sensing system

Publications (1)

Publication Number Publication Date
DE3071853D1 true DE3071853D1 (en) 1987-01-15

Family

ID=22321076

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080107619T Expired DE3071853D1 (en) 1979-12-27 1980-12-04 Sensing system for a capacitive semiconductor memory

Country Status (4)

Country Link
US (1) US4300210A (de)
EP (1) EP0031491B1 (de)
JP (1) JPS6027116B2 (de)
DE (1) DE3071853D1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4525810A (en) * 1980-07-28 1985-06-25 International Business Machines Corporation Semiconductor memory capable of both read/write and read-only operation
US4345148A (en) * 1980-10-06 1982-08-17 Hughes Aircraft Company Automatic responsivity control for a CCD imager
US4459609A (en) * 1981-09-14 1984-07-10 International Business Machines Corporation Charge-stabilized memory
JPS6013398A (ja) * 1983-07-04 1985-01-23 Hitachi Ltd 半導体多値記憶装置
US4593381A (en) * 1983-11-15 1986-06-03 The Board Of Trustees Of The Leland Stanford Junior University Microplex chip for use with a microstrip detector
EP0148488B1 (de) * 1983-12-23 1992-03-18 Hitachi, Ltd. Halbleiterspeicher mit einer Speicherstruktur mit vielfachen Pegeln
JPS60136088A (ja) * 1983-12-23 1985-07-19 Hitachi Ltd 半導体多値記憶装置
US4719600A (en) * 1986-02-18 1988-01-12 International Business Machines Corporation Sense circuit for multilevel storage system
JPH0329505U (de) * 1989-07-31 1991-03-25
US5218569A (en) 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
US6002614A (en) * 1991-02-08 1999-12-14 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
US5559455A (en) * 1994-12-23 1996-09-24 Lucent Technologies Inc. Sense amplifier with overvoltage protection
US6353554B1 (en) 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
US6857099B1 (en) * 1996-09-18 2005-02-15 Nippon Steel Corporation Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program
AUPO799197A0 (en) * 1997-07-15 1997-08-07 Silverbrook Research Pty Ltd Image processing method and apparatus (ART01)
US6137739A (en) * 1998-06-29 2000-10-24 Hyundai Electronics Industries Co., Ltd. Multilevel sensing circuit and method thereof

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US3819959A (en) * 1970-12-04 1974-06-25 Ibm Two phase charge-coupled semiconductor device
BE789528A (fr) * 1971-10-01 1973-01-15 Ibm Dispositif de detection de charges emmagasinees
US3993917A (en) * 1975-05-29 1976-11-23 International Business Machines Corporation Parameter independent FET sense amplifier
US3979734A (en) * 1975-06-16 1976-09-07 International Business Machines Corporation Multiple element charge storage memory cell
JPS5235536A (en) * 1975-09-13 1977-03-18 Toshiba Corp Memory using charge cobination element
US4035667A (en) * 1975-12-02 1977-07-12 International Business Machines Corporation Input circuit for inserting charge packets into a charge-transfer-device
GB1562774A (en) * 1976-03-26 1980-03-19 Ibm Circuits for generating sequences of signals
US4040017A (en) * 1976-03-31 1977-08-02 International Business Machines Corporation Injected charge capacitor memory
US4139910A (en) * 1976-12-06 1979-02-13 International Business Machines Corporation Charge coupled device memory with method of doubled storage capacity and independent of process parameters and temperature
US4104543A (en) * 1977-02-22 1978-08-01 Hughes Aircraft Company Multichannel CCD signal subtraction system
JPS53144232A (en) * 1977-04-28 1978-12-15 Toshiba Corp Sensor circuit for multi-value signal charge transfer device
US4202046A (en) * 1978-09-01 1980-05-06 Ncr Corporation Data storage system for storing multilevel signals

Also Published As

Publication number Publication date
US4300210A (en) 1981-11-10
JPS6027116B2 (ja) 1985-06-27
EP0031491B1 (de) 1986-12-03
EP0031491A3 (en) 1984-05-23
JPS5694582A (en) 1981-07-31
EP0031491A2 (de) 1981-07-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee