DE3161302D1 - Method of producing a semiconductor device - Google Patents
Method of producing a semiconductor deviceInfo
- Publication number
- DE3161302D1 DE3161302D1 DE8181301320T DE3161302T DE3161302D1 DE 3161302 D1 DE3161302 D1 DE 3161302D1 DE 8181301320 T DE8181301320 T DE 8181301320T DE 3161302 T DE3161302 T DE 3161302T DE 3161302 D1 DE3161302 D1 DE 3161302D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02683—Continuous wave laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/09—Laser anneal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/091—Laser beam processing of fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/093—Laser beam treatment in general
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/123—Polycrystalline diffuse anneal
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4569480A JPS56142630A (en) | 1980-04-09 | 1980-04-09 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3161302D1 true DE3161302D1 (en) | 1983-12-08 |
Family
ID=12726486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8181301320T Expired DE3161302D1 (en) | 1980-04-09 | 1981-03-27 | Method of producing a semiconductor device |
Country Status (4)
Country | Link |
---|---|
US (1) | US4375993A (de) |
EP (1) | EP0037685B1 (de) |
JP (1) | JPS56142630A (de) |
DE (1) | DE3161302D1 (de) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8006339A (nl) * | 1979-11-21 | 1981-06-16 | Hitachi Ltd | Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan. |
JPS58112323A (ja) * | 1981-12-26 | 1983-07-04 | Fujitsu Ltd | 電子ビ−ムアニ−ル方法 |
JPS58147024A (ja) * | 1982-02-24 | 1983-09-01 | Fujitsu Ltd | ラテラルエピタキシヤル成長法 |
JPS58164219A (ja) * | 1982-03-25 | 1983-09-29 | Agency Of Ind Science & Technol | 積層型半導体装置の製造方法 |
JPS58176929A (ja) * | 1982-04-09 | 1983-10-17 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS58194799A (ja) * | 1982-05-07 | 1983-11-12 | Hitachi Ltd | 単結晶シリコンの製造方法 |
US4466179A (en) * | 1982-10-19 | 1984-08-21 | Harris Corporation | Method for providing polysilicon thin films of improved uniformity |
US4472456A (en) * | 1982-11-18 | 1984-09-18 | Texas Instruments Incorporated | Absorption optimized laser annealing |
US4592799A (en) * | 1983-05-09 | 1986-06-03 | Sony Corporation | Method of recrystallizing a polycrystalline, amorphous or small grain material |
US4566914A (en) * | 1983-05-13 | 1986-01-28 | Micro Power Systems, Inc. | Method of forming localized epitaxy and devices formed therein |
US4698486A (en) * | 1984-02-28 | 1987-10-06 | Tamarack Scientific Co., Inc. | Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc. |
JPS6143409A (ja) * | 1984-08-08 | 1986-03-03 | Agency Of Ind Science & Technol | 半導体薄膜結晶層の製造方法 |
EP0304337B1 (de) * | 1987-08-20 | 1994-10-05 | Canon Kabushiki Kaisha | Hybrid-Substrat |
US5232766A (en) * | 1987-08-20 | 1993-08-03 | Canon Kabushiki Kaisha | Hybrid substrate |
JPH07114237B2 (ja) * | 1987-08-26 | 1995-12-06 | 株式会社東芝 | 半導体装置 |
US4758533A (en) * | 1987-09-22 | 1988-07-19 | Xmr Inc. | Laser planarization of nonrefractory metal during integrated circuit fabrication |
DE3938755A1 (de) * | 1989-11-23 | 1991-05-29 | Henkel Kgaa | Verfahren zur kontinuierlichen maschinellen reinigung von gebrauchsgeschirr |
US5930608A (en) | 1992-02-21 | 1999-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a thin film transistor in which the channel region of the transistor consists of two portions of differing crystallinity |
JP3213338B2 (ja) * | 1991-05-15 | 2001-10-02 | 株式会社リコー | 薄膜半導体装置の製法 |
US5338388A (en) * | 1992-05-04 | 1994-08-16 | Mitsubishi Denki Kabushiki Kaisha | Method of forming single-crystal semiconductor films |
US5405804A (en) * | 1993-01-22 | 1995-04-11 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device by laser annealing a metal layer through an insulator |
JP2646977B2 (ja) * | 1993-11-29 | 1997-08-27 | 日本電気株式会社 | 順スタガ型薄膜トランジスタの製造方法 |
US5626670A (en) * | 1994-10-03 | 1997-05-06 | American Research Corporation Of Virginia | Method for producing low thermal budget ferroelectric thin films for integrated device structures using laser-crystallization of spin-on sol-gel films |
US5697998A (en) * | 1996-03-05 | 1997-12-16 | The Aerospace Corporation | Sapphire window laser edge annealing |
JPH1140501A (ja) * | 1997-05-20 | 1999-02-12 | Fujitsu Ltd | 半導体装置の製造方法及び半導体装置 |
US6594446B2 (en) | 2000-12-04 | 2003-07-15 | Vortek Industries Ltd. | Heat-treating methods and systems |
US7015422B2 (en) | 2000-12-21 | 2006-03-21 | Mattson Technology, Inc. | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
US6970644B2 (en) | 2000-12-21 | 2005-11-29 | Mattson Technology, Inc. | Heating configuration for use in thermal processing chambers |
AU2002350358A1 (en) * | 2001-12-26 | 2003-07-30 | Vortek Indusries Ltd. | Temperature measurement and heat-treating methods and systems |
JP2004207691A (ja) * | 2002-12-11 | 2004-07-22 | Sharp Corp | 半導体薄膜の製造方法、その製造方法により得られる半導体薄膜、その半導体薄膜を用いる半導体素子および半導体薄膜の製造装置 |
AU2003287837A1 (en) | 2002-12-20 | 2004-07-14 | Vortek Industries Ltd | Methods and systems for supporting a workpiece and for heat-treating the workpiece |
WO2005059991A1 (en) * | 2003-12-19 | 2005-06-30 | Mattson Technology Canada Inc. | Apparatuses and methods for suppressing thermally induced motion of a workpiece |
JP2006041082A (ja) * | 2004-07-26 | 2006-02-09 | Sharp Corp | 半導体薄膜の結晶化装置および半導体薄膜の結晶化方法 |
US7279721B2 (en) * | 2005-04-13 | 2007-10-09 | Applied Materials, Inc. | Dual wavelength thermal flux laser anneal |
JP5967859B2 (ja) * | 2006-11-15 | 2016-08-10 | マトソン テクノロジー、インコーポレイテッド | 熱処理中の被加工物を支持するシステムおよび方法 |
US20090278287A1 (en) * | 2008-05-12 | 2009-11-12 | Yun Wang | Substrate processing with reduced warpage and/or controlled strain |
KR101610269B1 (ko) | 2008-05-16 | 2016-04-07 | 맷슨 테크놀로지, 인크. | 워크피스 파손 방지 방법 및 장치 |
US8026519B1 (en) | 2010-10-22 | 2011-09-27 | Ultratech, Inc. | Systems and methods for forming a time-averaged line image |
US8399808B2 (en) | 2010-10-22 | 2013-03-19 | Ultratech, Inc. | Systems and methods for forming a time-averaged line image |
JP5569376B2 (ja) * | 2010-12-07 | 2014-08-13 | 住友電気工業株式会社 | 半導体装置の製造方法 |
US8309474B1 (en) | 2011-06-07 | 2012-11-13 | Ultratech, Inc. | Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication |
US9302348B2 (en) | 2011-06-07 | 2016-04-05 | Ultratech Inc. | Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication |
US8546805B2 (en) | 2012-01-27 | 2013-10-01 | Ultratech, Inc. | Two-beam laser annealing with improved temperature performance |
US8501638B1 (en) | 2012-04-27 | 2013-08-06 | Ultratech, Inc. | Laser annealing scanning methods with reduced annealing non-uniformities |
US9558973B2 (en) | 2012-06-11 | 2017-01-31 | Ultratech, Inc. | Laser annealing systems and methods with ultra-short dwell times |
SG195515A1 (en) | 2012-06-11 | 2013-12-30 | Ultratech Inc | Laser annealing systems and methods with ultra-short dwell times |
US9490128B2 (en) | 2012-08-27 | 2016-11-08 | Ultratech, Inc. | Non-melt thin-wafer laser thermal annealing methods |
US9343307B2 (en) | 2013-12-24 | 2016-05-17 | Ultratech, Inc. | Laser spike annealing using fiber lasers |
JP6193305B2 (ja) | 2014-07-29 | 2017-09-06 | ウルトラテック インク | 高性能線形成光学システム及び方法 |
US10083843B2 (en) | 2014-12-17 | 2018-09-25 | Ultratech, Inc. | Laser annealing systems and methods with ultra-short dwell times |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE144481C (de) * | ||||
JPS5235596B2 (de) * | 1973-02-23 | 1977-09-09 | ||
US4309224A (en) * | 1978-10-06 | 1982-01-05 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device |
US4229232A (en) * | 1978-12-11 | 1980-10-21 | Spire Corporation | Method involving pulsed beam processing of metallic and dielectric materials |
JPS55115341A (en) * | 1979-02-28 | 1980-09-05 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
US4272880A (en) * | 1979-04-20 | 1981-06-16 | Intel Corporation | MOS/SOS Process |
US4234356A (en) * | 1979-06-01 | 1980-11-18 | Bell Telephone Laboratories, Incorporated | Dual wavelength optical annealing of materials |
US4249960A (en) * | 1979-06-18 | 1981-02-10 | Rca Corporation | Laser rounding a sharp semiconductor projection |
-
1980
- 1980-04-09 JP JP4569480A patent/JPS56142630A/ja active Granted
-
1981
- 1981-03-27 DE DE8181301320T patent/DE3161302D1/de not_active Expired
- 1981-03-27 EP EP81301320A patent/EP0037685B1/de not_active Expired
- 1981-04-08 US US06/252,216 patent/US4375993A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0037685A1 (de) | 1981-10-14 |
US4375993A (en) | 1983-03-08 |
JPS56142630A (en) | 1981-11-07 |
EP0037685B1 (de) | 1983-11-02 |
JPS6412088B2 (de) | 1989-02-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |