DE3169127D1 - Input circuit for an integrated monolithic semiconductor memory using field effect transistors - Google Patents

Input circuit for an integrated monolithic semiconductor memory using field effect transistors

Info

Publication number
DE3169127D1
DE3169127D1 DE8181103660T DE3169127T DE3169127D1 DE 3169127 D1 DE3169127 D1 DE 3169127D1 DE 8181103660 T DE8181103660 T DE 8181103660T DE 3169127 T DE3169127 T DE 3169127T DE 3169127 D1 DE3169127 D1 DE 3169127D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
field effect
input circuit
effect transistors
monolithic semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181103660T
Other languages
English (en)
Inventor
Werner Haug
Rainer Clemen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IBM Deutschland GmbH
International Business Machines Corp
Original Assignee
IBM Deutschland GmbH
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IBM Deutschland GmbH, International Business Machines Corp filed Critical IBM Deutschland GmbH
Application granted granted Critical
Publication of DE3169127D1 publication Critical patent/DE3169127D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/06—Address interface arrangements, e.g. address buffers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back
DE8181103660T 1981-05-13 1981-05-13 Input circuit for an integrated monolithic semiconductor memory using field effect transistors Expired DE3169127D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP81103660A EP0064569B1 (de) 1981-05-13 1981-05-13 Eingangsschaltung für einen monolithisch integrierten Halbleiterspeicher mit Feldeffekttransistoren

Publications (1)

Publication Number Publication Date
DE3169127D1 true DE3169127D1 (en) 1985-04-04

Family

ID=8187708

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181103660T Expired DE3169127D1 (en) 1981-05-13 1981-05-13 Input circuit for an integrated monolithic semiconductor memory using field effect transistors

Country Status (5)

Country Link
US (1) US4494018A (de)
EP (1) EP0064569B1 (de)
JP (1) JPS57191891A (de)
DE (1) DE3169127D1 (de)
ES (1) ES8303790A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5958920A (ja) * 1982-09-28 1984-04-04 Fujitsu Ltd バツフア回路
JPS59115615A (ja) * 1982-12-22 1984-07-04 Fujitsu Ltd 半導体回路
US4649523A (en) * 1985-02-08 1987-03-10 At&T Bell Laboratories Semiconductor memory with boosted word line
US4663701A (en) * 1985-08-02 1987-05-05 Intermedics, Inc. Voltage level shifter
US4902919A (en) * 1988-09-26 1990-02-20 Motorola, Inc. Inverting latching bootstrap driver with Vdd *2 booting
US4922128A (en) * 1989-01-13 1990-05-01 Ibm Corporation Boost clock circuit for driving redundant wordlines and sample wordlines
US5084637A (en) * 1989-05-30 1992-01-28 International Business Machines Corp. Bidirectional level shifting interface circuit
US5366162A (en) * 1990-10-15 1994-11-22 Ball Corporation Dual orifice nozzle and method for internally coating containers
US5153467A (en) * 1991-06-12 1992-10-06 Etron Technology, Inc. Bootstrap circuit for word line driver in semiconductor memory
US5402387A (en) * 1992-03-12 1995-03-28 Sharp Kabushiki Kaisha Semiconductor memory
DE10330064B3 (de) * 2003-07-03 2004-12-09 Siemens Ag Logikgatter mit potentialfreier Gate-Elektrode für organische integrierte Schaltungen
US20060262938A1 (en) * 2005-05-18 2006-11-23 Gauger Daniel M Jr Adapted audio response

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51122721A (en) * 1975-04-21 1976-10-27 Hitachi Ltd Boosting circuit
DE2553517C3 (de) * 1975-11-28 1978-12-07 Ibm Deutschland Gmbh, 7000 Stuttgart Verzögerungsschaltung mit Feldeffekttransistoren
US4239993A (en) * 1978-09-22 1980-12-16 Texas Instruments Incorporated High performance dynamic sense amplifier with active loads
DE2935121A1 (de) * 1978-09-07 1980-03-27 Texas Instruments Inc Schreib/lese-halbleiterspeicher
US4354123A (en) * 1979-08-13 1982-10-12 Mostek Corporation High voltage clock generator
DE2935465A1 (de) * 1979-09-01 1981-03-19 Ibm Deutschland Gmbh, 7000 Stuttgart Ttl-pegelumsetzer zur ansteuerung von feldeffekttransistoren
JPS5693422A (en) * 1979-12-05 1981-07-29 Fujitsu Ltd Level-up circuit
JPS6037996B2 (ja) * 1980-02-20 1985-08-29 沖電気工業株式会社 バツフア回路
JPS5713819A (en) * 1980-06-27 1982-01-23 Oki Electric Ind Co Ltd Output interface circuit

Also Published As

Publication number Publication date
EP0064569A1 (de) 1982-11-17
JPS57191891A (en) 1982-11-25
EP0064569B1 (de) 1985-02-27
US4494018A (en) 1985-01-15
ES508716A0 (es) 1983-02-01
ES8303790A1 (es) 1983-02-01
JPH022238B2 (de) 1990-01-17

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee