DE3175263D1 - Electrically programmable read-only memory - Google Patents

Electrically programmable read-only memory

Info

Publication number
DE3175263D1
DE3175263D1 DE8181430019T DE3175263T DE3175263D1 DE 3175263 D1 DE3175263 D1 DE 3175263D1 DE 8181430019 T DE8181430019 T DE 8181430019T DE 3175263 T DE3175263 T DE 3175263T DE 3175263 D1 DE3175263 D1 DE 3175263D1
Authority
DE
Germany
Prior art keywords
memory
programmable read
electrically programmable
electrically
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181430019T
Other languages
English (en)
Inventor
Dominique Basire
Arup Bhattacharyya
James Howard
Pierre Mollier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3175263D1 publication Critical patent/DE3175263D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
DE8181430019T 1981-06-25 1981-06-25 Electrically programmable read-only memory Expired DE3175263D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP81430019A EP0068058B1 (de) 1981-06-25 1981-06-25 Elektrisch programmierbarer Festwertspeicher

Publications (1)

Publication Number Publication Date
DE3175263D1 true DE3175263D1 (en) 1986-10-09

Family

ID=8188591

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181430019T Expired DE3175263D1 (en) 1981-06-25 1981-06-25 Electrically programmable read-only memory

Country Status (4)

Country Link
US (1) US4488262A (de)
EP (1) EP0068058B1 (de)
JP (1) JPS583193A (de)
DE (1) DE3175263D1 (de)

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US4899205A (en) * 1986-05-09 1990-02-06 Actel Corporation Electrically-programmable low-impedance anti-fuse element
US5266829A (en) * 1986-05-09 1993-11-30 Actel Corporation Electrically-programmable low-impedance anti-fuse element
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US5063539A (en) * 1988-10-31 1991-11-05 Raytheon Company Ferroelectric memory with diode isolation
JP2783579B2 (ja) * 1989-03-01 1998-08-06 株式会社東芝 半導体装置
US5163180A (en) * 1991-01-18 1992-11-10 Actel Corporation Low voltage programming antifuse and transistor breakdown method for making same
US5521423A (en) * 1993-04-19 1996-05-28 Kawasaki Steel Corporation Dielectric structure for anti-fuse programming element
US5485031A (en) * 1993-11-22 1996-01-16 Actel Corporation Antifuse structure suitable for VLSI application
US5808351A (en) * 1994-02-08 1998-09-15 Prolinx Labs Corporation Programmable/reprogramable structure using fuses and antifuses
US5834824A (en) * 1994-02-08 1998-11-10 Prolinx Labs Corporation Use of conductive particles in a nonconductive body as an integrated circuit antifuse
US5813881A (en) * 1994-02-08 1998-09-29 Prolinx Labs Corporation Programmable cable and cable adapter using fuses and antifuses
US5917229A (en) * 1994-02-08 1999-06-29 Prolinx Labs Corporation Programmable/reprogrammable printed circuit board using fuse and/or antifuse as interconnect
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US5444290A (en) * 1994-05-26 1995-08-22 Symetrix Corporation Method and apparatus for programming antifuse elements using combined AC and DC electric fields
US5679974A (en) * 1994-09-29 1997-10-21 Kawasaki Steel Corporation Antifuse element and semiconductor device having antifuse elements
US5565702A (en) * 1994-08-19 1996-10-15 Kawasaki Steel Corporation Antifuse element, semiconductor device having antifuse elements, and method for manufacturing the same
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US5962815A (en) * 1995-01-18 1999-10-05 Prolinx Labs Corporation Antifuse interconnect between two conducting layers of a printed circuit board
US5906042A (en) * 1995-10-04 1999-05-25 Prolinx Labs Corporation Method and structure to interconnect traces of two conductive layers in a printed circuit board
US5767575A (en) * 1995-10-17 1998-06-16 Prolinx Labs Corporation Ball grid array structure and method for packaging an integrated circuit chip
US5811869A (en) 1996-01-04 1998-09-22 Micron Technology, Inc. Laser antifuse using gate capacitor
US5872338A (en) * 1996-04-10 1999-02-16 Prolinx Labs Corporation Multilayer board having insulating isolation rings
US5742555A (en) 1996-08-20 1998-04-21 Micron Technology, Inc. Method of anti-fuse repair
US5909049A (en) 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
US6034427A (en) * 1998-01-28 2000-03-07 Prolinx Labs Corporation Ball grid array structure and method for packaging an integrated circuit chip
US6836000B1 (en) * 2000-03-01 2004-12-28 Micron Technology, Inc. Antifuse structure and method of use
US6618295B2 (en) 2001-03-21 2003-09-09 Matrix Semiconductor, Inc. Method and apparatus for biasing selected and unselected array lines when writing a memory array
US6798693B2 (en) * 2001-09-18 2004-09-28 Kilopass Technologies, Inc. Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric
EP1436815B1 (de) * 2001-09-18 2010-03-03 Kilopass Technology, Inc. Halbleiterspeicherzelle und speicherarray mit einem durchbruchsphänomen in einem ultradünnen dielektrikum
US6700151B2 (en) * 2001-10-17 2004-03-02 Kilopass Technologies, Inc. Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric
US6766960B2 (en) * 2001-10-17 2004-07-27 Kilopass Technologies, Inc. Smart card having memory using a breakdown phenomena in an ultra-thin dielectric
US6940751B2 (en) * 2002-04-26 2005-09-06 Kilopass Technologies, Inc. High density semiconductor memory cell and memory array using a single transistor and having variable gate oxide breakdown
US6992925B2 (en) * 2002-04-26 2006-01-31 Kilopass Technologies, Inc. High density semiconductor memory cell and memory array using a single transistor and having counter-doped poly and buried diffusion wordline
US6898116B2 (en) * 2002-04-26 2005-05-24 Kilopass Technologies, Inc. High density semiconductor memory cell and memory array using a single transistor having a buried N+ connection
US6777757B2 (en) * 2002-04-26 2004-08-17 Kilopass Technologies, Inc. High density semiconductor memory cell and memory array using a single transistor
US6650143B1 (en) 2002-07-08 2003-11-18 Kilopass Technologies, Inc. Field programmable gate array based upon transistor gate oxide breakdown
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US6865407B2 (en) * 2002-07-11 2005-03-08 Optical Sensors, Inc. Calibration technique for non-invasive medical devices
US7042027B2 (en) * 2002-08-30 2006-05-09 Micron Technology, Inc. Gated lateral thyristor-based random access memory cell (GLTRAM)
US6888200B2 (en) * 2002-08-30 2005-05-03 Micron Technology Inc. One transistor SOI non-volatile random access memory cell
US6903969B2 (en) * 2002-08-30 2005-06-07 Micron Technology Inc. One-device non-volatile random access memory cell
US6917078B2 (en) * 2002-08-30 2005-07-12 Micron Technology Inc. One transistor SOI non-volatile random access memory cell
US7031209B2 (en) * 2002-09-26 2006-04-18 Kilopass Technology, Inc. Methods and circuits for testing programmability of a semiconductor memory cell and memory array using a breakdown phenomenon in an ultra-thin dielectric
US7042772B2 (en) * 2002-09-26 2006-05-09 Kilopass Technology, Inc. Methods and circuits for programming of a semiconductor memory cell and memory array using a breakdown phenomenon in an ultra-thin dielectric
US6791891B1 (en) 2003-04-02 2004-09-14 Kilopass Technologies, Inc. Method of testing the thin oxide of a semiconductor memory cell that uses breakdown voltage
US8125003B2 (en) * 2003-07-02 2012-02-28 Micron Technology, Inc. High-performance one-transistor memory cell
US6924664B2 (en) * 2003-08-15 2005-08-02 Kilopass Technologies, Inc. Field programmable gate array
US7177183B2 (en) 2003-09-30 2007-02-13 Sandisk 3D Llc Multiple twin cell non-volatile memory array and logic block structure and method therefor
US6972986B2 (en) * 2004-02-03 2005-12-06 Kilopass Technologies, Inc. Combination field programmable gate array allowing dynamic reprogrammability and non-votatile programmability based upon transistor gate oxide breakdown
US7064973B2 (en) * 2004-02-03 2006-06-20 Klp International, Ltd. Combination field programmable gate array allowing dynamic reprogrammability
US20050218929A1 (en) * 2004-04-02 2005-10-06 Man Wang Field programmable gate array logic cell and its derivatives
US9123572B2 (en) 2004-05-06 2015-09-01 Sidense Corporation Anti-fuse memory cell
US7402855B2 (en) * 2004-05-06 2008-07-22 Sidense Corp. Split-channel antifuse array architecture
US8735297B2 (en) 2004-05-06 2014-05-27 Sidense Corporation Reverse optical proximity correction method
US7755162B2 (en) 2004-05-06 2010-07-13 Sidense Corp. Anti-fuse memory cell
US7164290B2 (en) * 2004-06-10 2007-01-16 Klp International, Ltd. Field programmable gate array logic unit and its cluster
US20050275427A1 (en) * 2004-06-10 2005-12-15 Man Wang Field programmable gate array logic unit and its cluster
US7145186B2 (en) 2004-08-24 2006-12-05 Micron Technology, Inc. Memory cell with trenched gated thyristor
US7135886B2 (en) * 2004-09-20 2006-11-14 Klp International, Ltd. Field programmable gate arrays using both volatile and nonvolatile memory cell properties and their control
KR100657956B1 (ko) * 2005-04-06 2006-12-14 삼성전자주식회사 다치 저항체 메모리 소자와 그 제조 및 동작 방법
FR2884346A1 (fr) * 2005-04-11 2006-10-13 St Microelectronics Sa Dispositif de memoire du type programmable une fois, et procede de programmation
US7193436B2 (en) * 2005-04-18 2007-03-20 Klp International Ltd. Fast processing path using field programmable gate array logic units
US8395140B2 (en) 2010-07-09 2013-03-12 Micron Technology, Inc. Cross-point memory utilizing Ru/Si diode

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US4312046A (en) * 1979-10-04 1982-01-19 Harris Corporation Vertical fuse and method of fabrication
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JPS5720463A (en) * 1980-07-14 1982-02-02 Toshiba Corp Semiconductor memory device

Also Published As

Publication number Publication date
JPS583193A (ja) 1983-01-08
EP0068058B1 (de) 1986-09-03
US4488262A (en) 1984-12-11
EP0068058A1 (de) 1983-01-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee