DE3175782D1 - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- DE3175782D1 DE3175782D1 DE8181303162T DE3175782T DE3175782D1 DE 3175782 D1 DE3175782 D1 DE 3175782D1 DE 8181303162 T DE8181303162 T DE 8181303162T DE 3175782 T DE3175782 T DE 3175782T DE 3175782 D1 DE3175782 D1 DE 3175782D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55098426A JPS5832789B2 (ja) | 1980-07-18 | 1980-07-18 | 半導体メモリ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3175782D1 true DE3175782D1 (en) | 1987-02-05 |
Family
ID=14219476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8181303162T Expired DE3175782D1 (en) | 1980-07-18 | 1981-07-10 | Semiconductor memory device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4419743A (de) |
| EP (1) | EP0046011B1 (de) |
| JP (1) | JPS5832789B2 (de) |
| DE (1) | DE3175782D1 (de) |
| IE (1) | IE52689B1 (de) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4641165A (en) * | 1982-04-28 | 1987-02-03 | Tokyo Shibaura Denki Kabushiki Kaisha | Dynamic memory device with an RC circuit for inhibiting the effects of alpha particle radiation |
| JPS592365A (ja) * | 1982-06-28 | 1984-01-07 | Fujitsu Ltd | ダイナミツク型半導体記憶装置 |
| JPS602782B2 (ja) * | 1982-06-30 | 1985-01-23 | 富士通株式会社 | 半導体記憶装置 |
| US5244825A (en) * | 1983-02-23 | 1993-09-14 | Texas Instruments Incorporated | DRAM process with improved poly-to-poly capacitor |
| US5359216A (en) * | 1983-02-23 | 1994-10-25 | Texas Instruments Incorporated | DRAM process with improved polysilicon-to-polysilicon capacitor and the capacitor |
| JPH0666436B2 (ja) * | 1983-04-15 | 1994-08-24 | 株式会社日立製作所 | 半導体集積回路装置 |
| JPS6014462A (ja) * | 1983-07-05 | 1985-01-25 | Oki Electric Ind Co Ltd | 半導体メモリ素子 |
| US4652898A (en) * | 1984-07-19 | 1987-03-24 | International Business Machines Corporation | High speed merged charge memory |
| US4658377A (en) * | 1984-07-26 | 1987-04-14 | Texas Instruments Incorporated | Dynamic memory array with segmented bit lines |
| USRE33694E (en) * | 1984-07-26 | 1991-09-17 | Texas Instruments Incorporated | Dynamic memory array with segmented bit lines |
| JPS6130493U (ja) * | 1984-07-27 | 1986-02-24 | 孝子 浜野 | 洗濯ばさみ部分の改良法 |
| JPH0793365B2 (ja) * | 1984-09-11 | 1995-10-09 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
| JPS61150366A (ja) * | 1984-12-25 | 1986-07-09 | Nec Corp | Ｍｉｓ型メモリ−セル |
| JPS61178795A (ja) * | 1985-02-01 | 1986-08-11 | Toshiba Corp | ダイナミツク型半導体記憶装置 |
| JPS61256761A (ja) * | 1985-05-10 | 1986-11-14 | Mitsubishi Electric Corp | 半導体記憶装置 |
| KR900006155B1 (ko) * | 1985-09-04 | 1990-08-24 | 후지쓰 가부시끼가이샤 | 프로그래머블 반도체 리드 온리 메모리 장치 |
| JPS62104786U (de) * | 1985-12-19 | 1987-07-03 | ||
| US5098192A (en) * | 1986-04-30 | 1992-03-24 | Texas Instruments Incorporated | DRAM with improved poly-to-poly capacitor |
| JPS63146461A (ja) * | 1986-12-10 | 1988-06-18 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JP2621181B2 (ja) * | 1987-06-12 | 1997-06-18 | 日本電気株式会社 | Ｍｉｓ型半導体記憶装置 |
| US20010008288A1 (en) | 1988-01-08 | 2001-07-19 | Hitachi, Ltd. | Semiconductor integrated circuit device having memory cells |
| US5374576A (en) * | 1988-12-21 | 1994-12-20 | Hitachi, Ltd. | Method of fabricating stacked capacitor cell memory devices |
| US5049958A (en) * | 1989-01-27 | 1991-09-17 | Texas Instruments Incorporated | Stacked capacitors for VLSI semiconductor devices |
| JPH02222571A (ja) * | 1989-02-23 | 1990-09-05 | Sharp Corp | 半導体記憶装置 |
| US5006481A (en) * | 1989-11-30 | 1991-04-09 | Sgs-Thomson Microelectronics, Inc. | Method of making a stacked capacitor DRAM cell |
| JPH04218959A (ja) * | 1990-10-18 | 1992-08-10 | Mitsubishi Electric Corp | 半導体装置およびその制御方法 |
| US5592411A (en) * | 1995-11-02 | 1997-01-07 | Motorola, Inc. | Non-volatile register and method for accessing data therein |
| US5724283A (en) * | 1996-06-14 | 1998-03-03 | Motorola, Inc. | Data storage element and method for restoring data |
| US7034353B2 (en) | 1998-02-27 | 2006-04-25 | Micron Technology, Inc. | Methods for enhancing capacitors having roughened features to increase charge-storage capacity |
| US6150706A (en) * | 1998-02-27 | 2000-11-21 | Micron Technology, Inc. | Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer |
| US6682970B1 (en) | 1998-02-27 | 2004-01-27 | Micron Technology, Inc. | Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer |
| US6201730B1 (en) * | 1999-06-01 | 2001-03-13 | Infineon Technologies North America Corp. | Sensing of memory cell via a plateline |
| JP2002094027A (ja) | 2000-09-11 | 2002-03-29 | Toshiba Corp | 半導体記憶装置とその製造方法 |
| FR2829280B1 (fr) * | 2001-09-05 | 2004-09-24 | St Microelectronics Sa | Dispositif de memoire claquable et procede de claquage d'une telle memoire |
| JP2008282459A (ja) * | 2007-05-08 | 2008-11-20 | Elpida Memory Inc | 半導体記憶装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3986180A (en) * | 1975-09-22 | 1976-10-12 | International Business Machines Corporation | Depletion mode field effect transistor memory system |
| JPS5810864B2 (ja) * | 1976-07-05 | 1983-02-28 | 株式会社日立製作所 | 半導体記憶装置 |
| NL176415C (nl) * | 1976-07-05 | 1985-04-01 | Hitachi Ltd | Halfgeleidergeheugeninrichting omvattende een matrix van halfgeleidergeheugencellen, die bestaan uit een veldeffekttransistor en een opslagcapaciteit. |
| JPS536579A (en) * | 1976-07-07 | 1978-01-21 | Agency Of Ind Science & Technol | Semiconductor device |
| US4188671A (en) * | 1977-01-24 | 1980-02-12 | Bell Telephone Laboratories, Incorporated | Switched-capacitor memory |
| DE2815605C3 (de) * | 1978-04-11 | 1981-04-16 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterspeicher mit Ansteuerleitungen hoher Leitfähigkeit |
-
1980
- 1980-07-18 JP JP55098426A patent/JPS5832789B2/ja not_active Expired
-
1981
- 1981-07-07 IE IE1527/81A patent/IE52689B1/en unknown
- 1981-07-10 DE DE8181303162T patent/DE3175782D1/de not_active Expired
- 1981-07-10 US US06/282,266 patent/US4419743A/en not_active Expired - Fee Related
- 1981-07-10 EP EP81303162A patent/EP0046011B1/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| EP0046011A3 (en) | 1983-08-24 |
| EP0046011B1 (de) | 1986-12-30 |
| US4419743A (en) | 1983-12-06 |
| JPS5832789B2 (ja) | 1983-07-15 |
| IE811527L (en) | 1982-01-18 |
| EP0046011A2 (de) | 1982-02-17 |
| IE52689B1 (en) | 1988-01-20 |
| JPS5723261A (en) | 1982-02-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |