DE3177169D1 - Halbleiterspeicheranordnung. - Google Patents

Halbleiterspeicheranordnung.

Info

Publication number
DE3177169D1
DE3177169D1 DE8181110659T DE3177169T DE3177169D1 DE 3177169 D1 DE3177169 D1 DE 3177169D1 DE 8181110659 T DE8181110659 T DE 8181110659T DE 3177169 T DE3177169 T DE 3177169T DE 3177169 D1 DE3177169 D1 DE 3177169D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
memory arrangement
arrangement
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8181110659T
Other languages
English (en)
Inventor
Miyauchi Katsuki
Kudo Tetsuichi
Minato Osamu
Masuhara Toshiaki
Uetani Yoshio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Maxell Holdings Ltd
Original Assignee
Hitachi Ltd
Hitachi Maxell Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Maxell Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3177169D1 publication Critical patent/DE3177169D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/05Accumulators with non-aqueous electrolyte
    • H01M10/056Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes
    • H01M10/0561Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes the electrolyte being constituted of inorganic materials only
    • H01M10/0562Solid materials
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/141Battery and back-up supplies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49593Battery in combination with a leadframe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries
DE8181110659T 1980-12-26 1981-12-21 Halbleiterspeicheranordnung. Expired - Lifetime DE3177169D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55188723A JPS57109183A (en) 1980-12-26 1980-12-26 Non-volatile memory

Publications (1)

Publication Number Publication Date
DE3177169D1 true DE3177169D1 (de) 1990-05-03

Family

ID=16228647

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181110659T Expired - Lifetime DE3177169D1 (de) 1980-12-26 1981-12-21 Halbleiterspeicheranordnung.

Country Status (5)

Country Link
US (1) US4539660A (de)
EP (2) EP0055451B1 (de)
JP (4) JPS57109183A (de)
CA (1) CA1202725A (de)
DE (1) DE3177169D1 (de)

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JPS5960866A (ja) * 1982-09-29 1984-04-06 Hitachi Ltd 薄膜リチウム二次電池
JPS59227090A (ja) * 1983-06-06 1984-12-20 Hitachi Ltd 不揮発性メモリ装置
JPS6012679A (ja) * 1983-07-01 1985-01-23 Matsushita Electric Ind Co Ltd 情報記憶素子
JPS6061988A (ja) * 1983-09-16 1985-04-09 Toshiba Corp 半導体メモリ
JPS60177498A (ja) * 1984-02-23 1985-09-11 Fujitsu Ltd 半導体記憶装置
US4628457A (en) * 1984-03-19 1986-12-09 Pitney Bowes Inc. Postal rate memory module with integral battery power
US4985870A (en) * 1986-07-02 1991-01-15 Dallas Semiconductor Corporation Apparatus for connecting electronic modules containing integrated circuits and backup batteries
US4826743A (en) * 1987-12-16 1989-05-02 General Motors Corporation Solid-state lithium battery
FR2629639A1 (en) * 1988-04-01 1989-10-06 Balkanski Minko Self-powered integrated component of the junction type and method for its manufacture
USRE40132E1 (en) 1988-06-17 2008-03-04 Elpida Memory, Inc. Large scale integrated circuit with sense amplifier circuits for low voltage operation
US5297097A (en) * 1988-06-17 1994-03-22 Hitachi Ltd. Large scale integrated circuit for low voltage operation
JPH0270458U (de) * 1988-11-17 1990-05-29
US4894301A (en) * 1989-08-03 1990-01-16 Bell Communications Research, Inc. Battery containing solid protonically conducting electrolyte
US5196374A (en) * 1990-01-26 1993-03-23 Sgs-Thomson Microelectronics, Inc. Integrated circuit package with molded cell
US5294829A (en) * 1990-01-26 1994-03-15 Sgs-Thomson Microelectronics, Inc. IC package having direct attach backup battery
US5289034A (en) * 1990-01-26 1994-02-22 Sgs-Thomson Microelectronics, Inc. IC package having replaceable backup battery
US5008776A (en) * 1990-06-06 1991-04-16 Sgs-Thomson Microelectronics, Inc. Zero power IC module
US5089877A (en) * 1990-06-06 1992-02-18 Sgs-Thomson Microelectronics, Inc. Zero power ic module
JPH04287357A (ja) * 1990-11-21 1992-10-12 Sgs Thomson Microelectron Inc モールドしたセルを有する集積回路パッケージ
EP0503805B1 (de) * 1991-03-14 1996-08-21 STMicroelectronics, Inc. Integrierte Schaltungspackung mit einer direkt befestigten Batterie
US5153710A (en) * 1991-07-26 1992-10-06 Sgs-Thomson Microelectronics, Inc. Integrated circuit package with laminated backup cell
US5187564A (en) * 1991-07-26 1993-02-16 Sgs-Thomson Microelectronics, Inc. Application of laminated interconnect media between a laminated power source and semiconductor devices
US5572226A (en) * 1992-05-15 1996-11-05 Micron Technology, Inc. Spherical antenna pattern(s) from antenna(s) arranged in a two-dimensional plane for use in RFID tags and labels
US5323150A (en) * 1992-06-11 1994-06-21 Micron Technology, Inc. Method for reducing conductive and convective heat loss from the battery in an RFID tag or other battery-powered devices
US6144546A (en) * 1996-12-26 2000-11-07 Kabushiki Kaisha Toshiba Capacitor having electrodes with two-dimensional conductivity
US6168884B1 (en) * 1999-04-02 2001-01-02 Lockheed Martin Energy Research Corporation Battery with an in-situ activation plated lithium anode
EP1328982B1 (de) * 2000-03-24 2005-07-20 Cymbet Corporation Gehäuse für die anordnung und anordnungen mit integrierter batterie
US6650000B2 (en) * 2001-01-16 2003-11-18 International Business Machines Corporation Apparatus and method for forming a battery in an integrated circuit
US7603144B2 (en) 2003-01-02 2009-10-13 Cymbet Corporation Active wireless tagging system on peel and stick substrate
US7294209B2 (en) 2003-01-02 2007-11-13 Cymbet Corporation Apparatus and method for depositing material onto a substrate using a roll-to-roll mask
JP3892826B2 (ja) * 2003-05-26 2007-03-14 株式会社東芝 電力増幅器及びこれを用いた無線通信装置
US7211351B2 (en) 2003-10-16 2007-05-01 Cymbet Corporation Lithium/air batteries with LiPON as separator and protective barrier and method
KR20070024473A (ko) 2004-01-06 2007-03-02 사임베트 코퍼레이션 층상 배리어구조와 그 형성방법
CA2615479A1 (en) 2005-07-15 2007-01-25 Cymbet Corporation Thin-film batteries with polymer and lipon electrolyte layers and methods
US7776478B2 (en) 2005-07-15 2010-08-17 Cymbet Corporation Thin-film batteries with polymer and LiPON electrolyte layers and method
MY165532A (en) * 2007-02-01 2018-04-02 Proteus Digital Health Inc Ingestible event marker systems
US7825867B2 (en) * 2007-04-26 2010-11-02 Round Rock Research, Llc Methods and systems of changing antenna polarization
US8870974B2 (en) 2008-02-18 2014-10-28 Front Edge Technology, Inc. Thin film battery fabrication using laser shaping
US7936268B2 (en) * 2007-08-31 2011-05-03 Round Rock Research, Llc Selectively coupling to feed points of an antenna system
US8115637B2 (en) 2008-06-03 2012-02-14 Micron Technology, Inc. Systems and methods to selectively connect antennas to receive and backscatter radio frequency signals
US20120231345A1 (en) 2009-07-22 2012-09-13 Sumitomo Electric Industries, Ltd. Nonaqueous electrolyte battery and solid electrolyte for nonaqueous electrolyte battery
KR101099585B1 (ko) 2010-11-01 2011-12-28 앰코 테크놀로지 코리아 주식회사 솔라 셀 반도체 패키지
US10601074B2 (en) 2011-06-29 2020-03-24 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US9853325B2 (en) 2011-06-29 2017-12-26 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US11527774B2 (en) 2011-06-29 2022-12-13 Space Charge, LLC Electrochemical energy storage devices
US8865340B2 (en) 2011-10-20 2014-10-21 Front Edge Technology Inc. Thin film battery packaging formed by localized heating
US9887429B2 (en) 2011-12-21 2018-02-06 Front Edge Technology Inc. Laminated lithium battery
US8864954B2 (en) 2011-12-23 2014-10-21 Front Edge Technology Inc. Sputtering lithium-containing material with multiple targets
US9257695B2 (en) 2012-03-29 2016-02-09 Front Edge Technology, Inc. Localized heat treatment of battery component films
US9077000B2 (en) 2012-03-29 2015-07-07 Front Edge Technology, Inc. Thin film battery and localized heat treatment
US9159964B2 (en) 2012-09-25 2015-10-13 Front Edge Technology, Inc. Solid state battery having mismatched battery cells
US9356320B2 (en) 2012-10-15 2016-05-31 Front Edge Technology Inc. Lithium battery having low leakage anode
WO2014147709A1 (ja) * 2013-03-18 2014-09-25 富士通株式会社 電子デバイスとその製造方法、及びネットワークシステム
WO2015121771A1 (en) * 2014-02-14 2015-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP6367575B2 (ja) * 2014-02-25 2018-08-01 株式会社日本マイクロニクス 二次電池搭載回路チップ及びその製造方法
US10008739B2 (en) 2015-02-23 2018-06-26 Front Edge Technology, Inc. Solid-state lithium battery with electrolyte
JP6468966B2 (ja) 2015-07-31 2019-02-13 株式会社日本マイクロニクス 二次電池搭載チップの製造方法
WO2019173626A1 (en) 2018-03-07 2019-09-12 Space Charge, LLC Thin-film solid-state energy-storage devices

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US3859638A (en) * 1973-05-31 1975-01-07 Intersil Inc Non-volatile memory unit with automatic standby power supply
DE2603697A1 (de) * 1975-02-04 1976-08-05 Clive Marles Sinclair Vorrichtung fuer einen digitalrechner
JPS5468126A (en) * 1977-11-11 1979-06-01 Seiko Epson Corp Memory element
JPS54123068A (en) * 1978-03-17 1979-09-25 Citizen Watch Co Ltd Electronic watch
DE2925383A1 (de) * 1978-06-29 1980-01-03 Ebauches Sa Elektrochemische energiequelle
DE2829052A1 (de) * 1978-07-01 1980-01-10 Kuenzel Roland Dipl Ing Integrierte elektronische bauelemente mit eigener stromversorgung
US4247913A (en) * 1979-05-10 1981-01-27 Hiniker Company Protection circuit for storage of volatile data
JPS55178899U (de) * 1979-06-07 1980-12-22
US4384350A (en) * 1980-11-03 1983-05-17 Fairchild Camera & Instrument Corp. MOS Battery backup controller for microcomputer random access memory

Also Published As

Publication number Publication date
EP0171089A3 (de) 1987-09-09
US4539660A (en) 1985-09-03
JPH0334662B2 (de) 1991-05-23
EP0055451A2 (de) 1982-07-07
JPS5925531A (ja) 1984-02-09
JPS57109183A (en) 1982-07-07
CA1202725A (en) 1986-04-01
EP0055451B1 (de) 1990-03-28
JPS5932023A (ja) 1984-02-21
JPH0410303B2 (de) 1992-02-24
EP0171089A2 (de) 1986-02-12
JPS5931570A (ja) 1984-02-20
EP0055451A3 (en) 1984-03-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee