DE3278567D1 - Solvent-soluble organopolysilsesquioxanes, processes for producing the same, and compositions and semiconductor devices using the same - Google Patents
Solvent-soluble organopolysilsesquioxanes, processes for producing the same, and compositions and semiconductor devices using the sameInfo
- Publication number
- DE3278567D1 DE3278567D1 DE8282305223T DE3278567T DE3278567D1 DE 3278567 D1 DE3278567 D1 DE 3278567D1 DE 8282305223 T DE8282305223 T DE 8282305223T DE 3278567 T DE3278567 T DE 3278567T DE 3278567 D1 DE3278567 D1 DE 3278567D1
- Authority
- DE
- Germany
- Prior art keywords
- same
- organopolysilsesquioxanes
- soluble
- compositions
- solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02137—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising alkyl silsesquioxane, e.g. MSQ
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/06—Preparatory processes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
- C08K5/0025—Crosslinking or vulcanising agents; including accelerators
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
- H01B3/465—Silicone oils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15788581A JPS5859222A (ja) | 1981-10-03 | 1981-10-03 | オルガノポリシルセスキオキサン及びその製造方法 |
JP56169178A JPS5869217A (ja) | 1981-10-22 | 1981-10-22 | 感光性シリコ−ン樹脂組成物 |
JP56190667A JPS5893240A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3278567D1 true DE3278567D1 (en) | 1988-07-07 |
Family
ID=27321247
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282305223T Expired DE3278567D1 (en) | 1981-10-03 | 1982-09-30 | Solvent-soluble organopolysilsesquioxanes, processes for producing the same, and compositions and semiconductor devices using the same |
Country Status (3)
Country | Link |
---|---|
US (1) | US4626556A (de) |
EP (1) | EP0076656B1 (de) |
DE (1) | DE3278567D1 (de) |
Families Citing this family (80)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5987840A (ja) * | 1982-11-10 | 1984-05-21 | Toray Silicone Co Ltd | 半導体装置 |
JPS60238827A (ja) * | 1984-05-14 | 1985-11-27 | Nippon Telegr & Teleph Corp <Ntt> | 感光性樹脂組成物 |
EP0163538B1 (de) * | 1984-05-30 | 1989-11-23 | Fujitsu Limited | Bilderzeugendes Material, Herstellung und Anwendung desselben |
US4670299A (en) * | 1984-11-01 | 1987-06-02 | Fujitsu Limited | Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board |
KR900005404B1 (ko) * | 1985-03-07 | 1990-07-28 | 휴우즈 에어크라프트 캄파니 | 이온 빔 및 전자 빔 석판 인쇄용 폴리실록산 내식막 |
US4745169A (en) * | 1985-05-10 | 1988-05-17 | Hitachi, Ltd. | Alkali-soluble siloxane polymer, silmethylene polymer, and polyorganosilsesquioxane polymer |
EP0204631A3 (de) * | 1985-06-04 | 1987-05-20 | Fairchild Semiconductor Corporation | Halbleiterstrukturen mit Polysiloxan-Nivellierschichten |
JPS6243424A (ja) * | 1985-08-20 | 1987-02-25 | Shin Etsu Chem Co Ltd | シルセスキオキサン乳濁液の製造方法 |
US4786569A (en) * | 1985-09-04 | 1988-11-22 | Ciba-Geigy Corporation | Adhesively bonded photostructurable polyimide film |
US4723978A (en) * | 1985-10-31 | 1988-02-09 | International Business Machines Corporation | Method for a plasma-treated polysiloxane coating |
JPH0791509B2 (ja) * | 1985-12-17 | 1995-10-04 | 住友化学工業株式会社 | 半導体用絶縁膜形成塗布液 |
DE3760030D1 (en) * | 1986-02-07 | 1989-02-02 | Nippon Telegraph & Telephone | Photosensitive and high energy beam sensitive resin composition containing substituted polysiloxane |
EP0255303B1 (de) * | 1986-07-25 | 1989-10-11 | Oki Electric Industry Company, Limited | Negatives Resistmaterial, Methode zu seiner Herstellung und Methode zu seiner Verwendung |
US4756977A (en) * | 1986-12-03 | 1988-07-12 | Dow Corning Corporation | Multilayer ceramics from hydrogen silsesquioxane |
US4753855A (en) * | 1986-12-04 | 1988-06-28 | Dow Corning Corporation | Multilayer ceramic coatings from metal oxides for protection of electronic devices |
US4911992A (en) * | 1986-12-04 | 1990-03-27 | Dow Corning Corporation | Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides |
US4746693A (en) * | 1986-12-12 | 1988-05-24 | Rca Corporation | Polyalkylsilsesquioxane coating composition |
US4818732A (en) * | 1987-03-19 | 1989-04-04 | The Standard Oil Company | High surface area ceramics prepared from organosilane gels |
DE3720671A1 (de) * | 1987-06-23 | 1989-01-05 | Degussa | Strahlenhaertbares mittel zur kratzfestbeschichtung von organischen glaesern und verfahren zu dessen herstellung |
US4801507A (en) * | 1987-07-02 | 1989-01-31 | Akzo American Inc. | Arylsiloxane/silicate compositions useful as interlayer dielectric films |
NL8702352A (nl) * | 1987-10-02 | 1989-05-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
US4847162A (en) * | 1987-12-28 | 1989-07-11 | Dow Corning Corporation | Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia |
US4981530A (en) * | 1988-11-28 | 1991-01-01 | International Business Machines Corporation | Planarizing ladder-type silsesquioxane polymer insulation layer |
JPH0386725A (ja) * | 1989-08-31 | 1991-04-11 | Fujitsu Ltd | 絶縁物の製造方法及び半導体装置の製造方法 |
JPH03116857A (ja) * | 1989-09-29 | 1991-05-17 | Mitsui Petrochem Ind Ltd | 発光または受光装置 |
US5110711A (en) * | 1989-10-10 | 1992-05-05 | International Business Machines Corporation | Method for forming a pattern |
US5059512A (en) * | 1989-10-10 | 1991-10-22 | International Business Machines Corporation | Ultraviolet light sensitive photoinitiator compositions, use thereof and radiation sensitive compositions |
US5102967A (en) * | 1989-12-27 | 1992-04-07 | General Electric Company | Process for making polysilsequioxane and polymethyl-n-hexylsilsesquioxane coating compositions and coating compositions formed thereby |
US5026813A (en) * | 1989-12-27 | 1991-06-25 | General Electric Company | Polysilsequioxane and polymethyl-N-hexylsilsesquioxane coating compositions |
JP2718231B2 (ja) * | 1990-01-10 | 1998-02-25 | 三菱電機株式会社 | 高純度末端ヒドロキシフェニルラダーシロキサンプレポリマーの製造方法および高純度末端ヒドロキシフェニルラダーポリシロキサンの製造方法 |
US5043789A (en) * | 1990-03-15 | 1991-08-27 | International Business Machines Corporation | Planarizing silsesquioxane copolymer coating |
KR950002874B1 (ko) * | 1990-06-25 | 1995-03-27 | 마쯔시다덴시고오교오 가부시기가이샤 | 광 또는 방사선감응성 조성물과 패턴형성방법과 포토마스크의 제조방법 및 반도체 |
JPH04233732A (ja) * | 1990-08-16 | 1992-08-21 | Motorola Inc | 半導体の製造工程で使用するスピン・オン誘電体 |
US5114757A (en) * | 1990-10-26 | 1992-05-19 | Linde Harold G | Enhancement of polyimide adhesion on reactive metals |
US5114754A (en) * | 1991-01-14 | 1992-05-19 | International Business Machines Corporation | Passivation of metal in metal/polyimide structures |
US5194928A (en) * | 1991-01-14 | 1993-03-16 | International Business Machines Corporation | Passivation of metal in metal/polyimide structure |
GB9115818D0 (en) * | 1991-07-23 | 1991-09-04 | Impact International Inc | Oligoorganosilasesquioxanes |
US5360878A (en) * | 1992-03-04 | 1994-11-01 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Highly crosslinked silicon polymers for gas chromatography columns |
US5397741A (en) * | 1993-03-29 | 1995-03-14 | International Business Machines Corporation | Process for metallized vias in polyimide |
WO1995018190A1 (en) * | 1993-12-27 | 1995-07-06 | Kawasaki Steel Corporation | Isolation film of semiconductor device, coating fluid for forming the film, and process for producing the film |
US5456952A (en) * | 1994-05-17 | 1995-10-10 | Lsi Logic Corporation | Process of curing hydrogen silsesquioxane coating to form silicon oxide layer |
JPH08245792A (ja) * | 1995-03-10 | 1996-09-24 | Mitsubishi Electric Corp | シリコーンラダーポリマー、シリコーンラダープレポリマーおよびそれらの製造方法 |
US5707783A (en) * | 1995-12-04 | 1998-01-13 | Complex Fluid Systems, Inc. | Mixtures of mono- and DI- or polyfunctional silanes as silylating agents for top surface imaging |
US6218497B1 (en) * | 1997-04-21 | 2001-04-17 | Alliedsignal Inc. | Organohydridosiloxane resins with low organic content |
US6743856B1 (en) | 1997-04-21 | 2004-06-01 | Honeywell International Inc. | Synthesis of siloxane resins |
US6015457A (en) * | 1997-04-21 | 2000-01-18 | Alliedsignal Inc. | Stable inorganic polymers |
US6143855A (en) * | 1997-04-21 | 2000-11-07 | Alliedsignal Inc. | Organohydridosiloxane resins with high organic content |
US6177360B1 (en) | 1997-11-06 | 2001-01-23 | International Business Machines Corporation | Process for manufacture of integrated circuit device |
US5953627A (en) * | 1997-11-06 | 1999-09-14 | International Business Machines Corporation | Process for manufacture of integrated circuit device |
US5998876A (en) * | 1997-12-30 | 1999-12-07 | International Business Machines Corporation | Reworkable thermoplastic hyper-branched encapsulant |
US6111323A (en) * | 1997-12-30 | 2000-08-29 | International Business Machines Corporation | Reworkable thermoplastic encapsulant |
US6962727B2 (en) * | 1998-03-20 | 2005-11-08 | Honeywell International Inc. | Organosiloxanes |
US6218020B1 (en) | 1999-01-07 | 2001-04-17 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with high organic content |
US6177199B1 (en) | 1999-01-07 | 2001-01-23 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with low organic content |
US5906859A (en) * | 1998-07-10 | 1999-05-25 | Dow Corning Corporation | Method for producing low dielectric coatings from hydrogen silsequioxane resin |
US6509259B1 (en) | 1999-06-09 | 2003-01-21 | Alliedsignal Inc. | Process of using siloxane dielectric films in the integration of organic dielectric films in electronic devices |
EP1190277B1 (de) * | 1999-06-10 | 2009-10-07 | AlliedSignal Inc. | Spin-on-glass antireflektionsbeschichtungen aufweisender halbleiter für photolithographie |
US6440550B1 (en) | 1999-10-18 | 2002-08-27 | Honeywell International Inc. | Deposition of fluorosilsesquioxane films |
US6472076B1 (en) | 1999-10-18 | 2002-10-29 | Honeywell International Inc. | Deposition of organosilsesquioxane films |
US6368400B1 (en) | 2000-07-17 | 2002-04-09 | Honeywell International | Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography |
GB2372996A (en) * | 2001-03-10 | 2002-09-11 | Dow Corning | Preparation of silicone resins |
US7060634B2 (en) * | 2002-01-17 | 2006-06-13 | Silecs Oy | Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications |
AU2003201435A1 (en) * | 2002-01-17 | 2003-07-30 | Silecs Oy | Thin films and methods for the preparation thereof |
US20050032357A1 (en) * | 2002-01-17 | 2005-02-10 | Rantala Juha T. | Dielectric materials and methods for integrated circuit applications |
TW200307709A (en) * | 2002-02-19 | 2003-12-16 | Honeywell Int Inc | Organosiloxanes |
US20070063188A1 (en) * | 2003-04-11 | 2007-03-22 | Rantala Juha T | Low-k dielectric material |
WO2004101651A1 (en) * | 2003-05-08 | 2004-11-25 | Honeywell International Inc. | Minimization of coating defects for compositions comprising silicon-based compounds and methods of producing and processing |
KR101100463B1 (ko) * | 2003-07-29 | 2011-12-29 | 도아고세이가부시키가이샤 | 규소 함유 고분자 화합물 및 그의 제조 방법 및 내열성 수지 조성물 및 내열성 피막 |
CA2543366A1 (en) | 2003-08-01 | 2005-02-24 | Dow Corning Corporation | Silicone based dielectric coatings and films for photovoltaic applications |
US7223517B2 (en) * | 2003-08-05 | 2007-05-29 | International Business Machines Corporation | Lithographic antireflective hardmask compositions and uses thereof |
US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
US8134144B2 (en) * | 2005-12-23 | 2012-03-13 | Xerox Corporation | Thin-film transistor |
US20070212886A1 (en) * | 2006-03-13 | 2007-09-13 | Dong Seon Uh | Organosilane polymers, hardmask compositions including the same and methods of producing semiconductor devices using organosilane hardmask compositions |
US8642246B2 (en) * | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
US8080604B2 (en) * | 2007-03-02 | 2011-12-20 | Lintec Corporation | Adhesive containing ladder-type polysilsesquioxane and adhesive sheet |
KR101353824B1 (ko) * | 2007-06-12 | 2014-01-21 | 삼성전자주식회사 | 유기 절연체 형성용 조성물 및 이를 이용하여 제조된 유기절연체 |
TWI443167B (zh) * | 2008-02-19 | 2014-07-01 | Lintec Corp | And a polyorganosiloxane compound as a main component |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
EP3194502A4 (de) | 2015-04-13 | 2018-05-16 | Honeywell International Inc. | Polysiloxanformulierungen und beschichtungen für optoelektronische anwendungen |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3372133A (en) * | 1965-06-23 | 1968-03-05 | Gen Electric | Process for producing organo-polysiloxanes |
FR1472047A (fr) * | 1965-06-29 | 1967-03-10 | Soc Ind Des Silicones | Polycondensats de silanes et procédé de préparation desdits polycondensats |
DE2153860C2 (de) * | 1970-10-29 | 1982-06-09 | Dai Nippon Printing Co., Ltd. | Verwendung von photopolymerisierbaren Gemischen zur Herstellung ätzmittelbeständiger Masken |
CA968898A (en) * | 1971-03-11 | 1975-06-03 | Robert C. Antonen | Solvent-free liquid organosiloxane resins |
US3758306A (en) * | 1971-03-25 | 1973-09-11 | Du Pont | Photopolymerizable compositions and elements containing organosilanes |
US4300153A (en) * | 1977-09-22 | 1981-11-10 | Sharp Kabushiki Kaisha | Flat shaped semiconductor encapsulation |
GB2026190B (en) * | 1978-07-07 | 1982-11-10 | Hitachi Ltd | Liquid crystal display device |
EP0046695B1 (de) * | 1980-08-26 | 1986-01-08 | Japan Synthetic Rubber Co., Ltd. | Leiterpolymere von Niederalkylpolysilsesquioxanen und Verfahren zur Herstellung |
US4480009A (en) * | 1980-12-15 | 1984-10-30 | M&T Chemicals Inc. | Siloxane-containing polymers |
-
1982
- 1982-09-30 EP EP82305223A patent/EP0076656B1/de not_active Expired
- 1982-09-30 DE DE8282305223T patent/DE3278567D1/de not_active Expired
-
1985
- 1985-09-25 US US06/779,617 patent/US4626556A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US4626556A (en) | 1986-12-02 |
EP0076656B1 (de) | 1988-06-01 |
EP0076656A3 (en) | 1985-01-09 |
EP0076656A2 (de) | 1983-04-13 |
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