DE3279582D1 - Merged metal silicide fuse and schottky diode and method of manufacture thereof - Google Patents

Merged metal silicide fuse and schottky diode and method of manufacture thereof

Info

Publication number
DE3279582D1
DE3279582D1 DE8383900110T DE3279582T DE3279582D1 DE 3279582 D1 DE3279582 D1 DE 3279582D1 DE 8383900110 T DE8383900110 T DE 8383900110T DE 3279582 T DE3279582 T DE 3279582T DE 3279582 D1 DE3279582 D1 DE 3279582D1
Authority
DE
Germany
Prior art keywords
manufacture
metal silicide
schottky diode
silicide fuse
merged metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383900110T
Other languages
English (en)
Inventor
Ronald L Schlupp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE3279582D1 publication Critical patent/DE3279582D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE8383900110T 1981-11-12 1982-11-08 Merged metal silicide fuse and schottky diode and method of manufacture thereof Expired DE3279582D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/320,368 US4518981A (en) 1981-11-12 1981-11-12 Merged platinum silicide fuse and Schottky diode and method of manufacture thereof
PCT/US1982/001576 WO1983001866A1 (en) 1981-11-12 1982-11-08 Merged platinum silicide fuse and schottky diode and method of manufacture thereof

Publications (1)

Publication Number Publication Date
DE3279582D1 true DE3279582D1 (en) 1989-05-03

Family

ID=23246104

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383900110T Expired DE3279582D1 (en) 1981-11-12 1982-11-08 Merged metal silicide fuse and schottky diode and method of manufacture thereof

Country Status (4)

Country Link
US (1) US4518981A (de)
EP (1) EP0093165B1 (de)
DE (1) DE3279582D1 (de)
WO (1) WO1983001866A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3234096A1 (de) * 1982-09-14 1984-03-15 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Bauelemente und arrays aus silizium zur detektion von infrarotem licht
US4796075A (en) * 1983-12-21 1989-01-03 Advanced Micro Devices, Inc. Fusible link structure for integrated circuits
JPS60201666A (ja) * 1984-03-27 1985-10-12 Nec Corp 半導体装置
US4670970A (en) * 1985-04-12 1987-06-09 Harris Corporation Method for making a programmable vertical silicide fuse
US4811080A (en) * 1985-08-27 1989-03-07 Fei Microwave, Inc. Monolithic pin diode and method for its manufacture
JPH0628290B2 (ja) * 1985-10-09 1994-04-13 三菱電機株式会社 回路用ヒューズを備えた半導体装置
US4679310A (en) * 1985-10-31 1987-07-14 Advanced Micro Devices, Inc. Method of making improved metal silicide fuse for integrated circuit structure
JPS63128750A (ja) * 1986-11-19 1988-06-01 Toshiba Corp 半導体装置
US5225359A (en) * 1990-08-17 1993-07-06 National Semiconductor Corporation Method of fabricating Schottky barrier diodes and Schottky barrier diode-clamped transistors
US5264725A (en) * 1992-12-07 1993-11-23 Micron Semiconductor, Inc. Low-current polysilicon fuse
US6337507B1 (en) * 1995-09-29 2002-01-08 Intel Corporation Silicide agglomeration fuse device with notches to enhance programmability
US5708291A (en) 1995-09-29 1998-01-13 Intel Corporation Silicide agglomeration fuse device
US20030025177A1 (en) * 2001-08-03 2003-02-06 Chandrasekharan Kothandaraman Optically and electrically programmable silicided polysilicon fuse device
US7106164B2 (en) 2003-12-03 2006-09-12 International Business Machines Corporation Apparatus and method for electronic fuse with improved ESD tolerance
US20050127475A1 (en) * 2003-12-03 2005-06-16 International Business Machines Corporation Apparatus and method for electronic fuse with improved esd tolerance
US7227207B2 (en) * 2005-03-03 2007-06-05 International Business Machines Corporation Dense semiconductor fuse array
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
JP5149576B2 (ja) * 2007-09-21 2013-02-20 パナソニック株式会社 半導体装置
JP2011216240A (ja) * 2010-03-31 2011-10-27 Oki Semiconductor Co Ltd 電流ヒューズ、半導体装置及び電流ヒューズの切断方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3191151A (en) * 1962-11-26 1965-06-22 Fairchild Camera Instr Co Programmable circuit
DE1764378C3 (de) * 1967-05-30 1973-12-20 Honeywell Information Systems Italia S.P.A., Caluso, Turin (Italien) Integrierte Randschichtdiodenmatrix und Verfahren zu ihrer Herstellung
US3636418A (en) * 1969-08-06 1972-01-18 Rca Corp Epitaxial semiconductor device having adherent bonding pads
US4009481A (en) * 1969-12-15 1977-02-22 Siemens Aktiengesellschaft Metal semiconductor diode
BE794202A (fr) * 1972-01-19 1973-05-16 Intel Corp Liaison fusible pour circuit integre sur substrat semi-conducteur pour memoires
US3777364A (en) * 1972-07-31 1973-12-11 Fairchild Camera Instr Co Methods for forming metal/metal silicide semiconductor device interconnect system
FR2228271B1 (de) * 1973-05-04 1976-11-12 Honeywell Bull Soc Ind
US4042950A (en) * 1976-03-01 1977-08-16 Advanced Micro Devices, Inc. Platinum silicide fuse links for integrated circuit devices
US4045310A (en) * 1976-05-03 1977-08-30 Teletype Corporation Starting product for the production of a read-only memory and a method of producing it and the read-only memory
DE2625089A1 (de) * 1976-06-04 1977-12-15 Bosch Gmbh Robert Anordnung zum auftrennen von leiterbahnen auf integrierten schaltkreisen
NL7612883A (nl) * 1976-11-19 1978-05-23 Philips Nv Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan.
JPS5421280A (en) * 1977-07-19 1979-02-17 Fujitsu Ltd Schottky barrier diode
FR2404895A1 (fr) * 1977-09-30 1979-04-27 Radiotechnique Compelec Cellule de memoire programmable a diodes semiconductrices
CA1135854A (en) * 1977-09-30 1982-11-16 Michel Moussie Programmable read only memory cell
JPS5527645A (en) * 1978-08-17 1980-02-27 Nec Corp Semiconductor device
US4184933A (en) * 1978-11-29 1980-01-22 Harris Corporation Method of fabricating two level interconnects and fuse on an IC
US4329706A (en) * 1979-03-01 1982-05-11 International Business Machines Corporation Doped polysilicon silicide semiconductor integrated circuit interconnections
DE2926874A1 (de) * 1979-07-03 1981-01-22 Siemens Ag Verfahren zum herstellen von niederohmigen, diffundierten bereichen bei der silizium-gate-technologie
JPS5636159A (en) * 1979-08-31 1981-04-09 Hitachi Ltd Schottky diode
US4305200A (en) * 1979-11-06 1981-12-15 Hewlett-Packard Company Method of forming self-registering source, drain, and gate contacts for FET transistor structures
DE2950644C2 (de) * 1979-12-15 1985-12-12 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Schottky-Diode
US4259680A (en) * 1980-04-17 1981-03-31 Bell Telephone Laboratories, Incorporated High speed lateral bipolar transistor
US4374700A (en) * 1981-05-29 1983-02-22 Texas Instruments Incorporated Method of manufacturing silicide contacts for CMOS devices

Also Published As

Publication number Publication date
EP0093165A1 (de) 1983-11-09
WO1983001866A1 (en) 1983-05-26
EP0093165B1 (de) 1989-03-29
EP0093165A4 (de) 1986-08-21
US4518981A (en) 1985-05-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee