DE3279658D1 - Defect-remediable semiconductor integrated circuit memory with spare substitution - Google Patents

Defect-remediable semiconductor integrated circuit memory with spare substitution

Info

Publication number
DE3279658D1
DE3279658D1 DE8282300551T DE3279658T DE3279658D1 DE 3279658 D1 DE3279658 D1 DE 3279658D1 DE 8282300551 T DE8282300551 T DE 8282300551T DE 3279658 T DE3279658 T DE 3279658T DE 3279658 D1 DE3279658 D1 DE 3279658D1
Authority
DE
Germany
Prior art keywords
remediable
defect
integrated circuit
semiconductor integrated
circuit memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282300551T
Other languages
English (en)
Inventor
Takaaki Hagiwara
Masatada Horiuchi
Ryuji Kondo
Yuji Yatsuda
Shinichi Minami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3279658D1 publication Critical patent/DE3279658D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G11C29/789—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using non-volatile cells or latches
DE8282300551T 1981-02-06 1982-02-03 Defect-remediable semiconductor integrated circuit memory with spare substitution Expired DE3279658D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56015742A JPS57130298A (en) 1981-02-06 1981-02-06 Semiconductor integrated circuit memory and relieving method for its fault

Publications (1)

Publication Number Publication Date
DE3279658D1 true DE3279658D1 (en) 1989-06-01

Family

ID=11897208

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282300551T Expired DE3279658D1 (en) 1981-02-06 1982-02-03 Defect-remediable semiconductor integrated circuit memory with spare substitution

Country Status (4)

Country Link
US (1) US4514830A (de)
EP (1) EP0058049B1 (de)
JP (1) JPS57130298A (de)
DE (1) DE3279658D1 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5046046A (en) * 1978-03-10 1991-09-03 Intel Corporation Redundancy CAM using word line from memory
JPS593795A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体記憶装置
US4464736A (en) * 1982-09-23 1984-08-07 Motorola, Inc. In-package E2 PROM redundancy
EP0160720B1 (de) * 1984-05-07 1988-01-07 Deutsche ITT Industries GmbH Halbleiterspeicherzelle mit einem potentialmässig schwebenden Speichergate
JPS60129998A (ja) * 1984-09-14 1985-07-11 Sharp Corp 冗長構成ｍｏｓメモリのデコ−ダ回路
US4654830A (en) * 1984-11-27 1987-03-31 Monolithic Memories, Inc. Method and structure for disabling and replacing defective memory in a PROM
KR890001847B1 (ko) * 1986-05-07 1989-05-25 삼성전자 주식회사 반도체 메모리 장치의 리던던시 회로
GB2229021B (en) * 1989-03-10 1993-03-31 Intel Corp Redundancy cam using word line from memory
US5535328A (en) * 1989-04-13 1996-07-09 Sandisk Corporation Non-volatile memory system card with flash erasable sectors of EEprom cells including a mechanism for substituting defective cells
EP0617363B1 (de) 1989-04-13 2000-01-26 SanDisk Corporation Austausch von fehlerhaften Speicherzellen einer EEprommatritze
US7447069B1 (en) 1989-04-13 2008-11-04 Sandisk Corporation Flash EEprom system
US7190617B1 (en) 1989-04-13 2007-03-13 Sandisk Corporation Flash EEprom system
JP2755781B2 (ja) * 1990-04-23 1998-05-25 株式会社東芝 半導体記憶装置およびその製造方法
US5276834A (en) * 1990-12-04 1994-01-04 Micron Technology, Inc. Spare memory arrangement
KR940006922B1 (ko) * 1991-07-11 1994-07-29 금성일렉트론 주식회사 반도체 메모리의 리던던시 회로
FR2718274B1 (fr) * 1994-03-31 1996-05-24 Sgs Thomson Microelectronics Dispositif matriciel de fusibles de redondance pour mémoire intégrée.
EP0724267B1 (de) * 1995-01-26 2001-04-11 STMicroelectronics S.r.l. Programmierbares Multibitregister für Übereinstimmungs- und Sprungbetrieb, und Übereinstimmungssicherungszelle
DE69521493T2 (de) * 1995-04-04 2001-10-11 St Microelectronics Srl Selektiver Sicherungskodierer
US5838620A (en) * 1995-04-05 1998-11-17 Micron Technology, Inc. Circuit for cancelling and replacing redundant elements
US6728851B1 (en) 1995-07-31 2004-04-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6757800B1 (en) 1995-07-31 2004-06-29 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6081878A (en) 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6801979B1 (en) 1995-07-31 2004-10-05 Lexar Media, Inc. Method and apparatus for memory control circuit
US5812468A (en) * 1995-11-28 1998-09-22 Micron Technology, Inc. Programmable device for redundant element cancel in a memory
US5828599A (en) * 1996-08-06 1998-10-27 Simtek Corporation Memory with electrically erasable and programmable redundancy
US5912579A (en) * 1997-02-06 1999-06-15 Zagar; Paul S. Circuit for cancelling and replacing redundant elements
US6411546B1 (en) 1997-03-31 2002-06-25 Lexar Media, Inc. Nonvolatile memory using flexible erasing methods and method and system for using same
US6055611A (en) * 1997-07-09 2000-04-25 Micron Technology, Inc. Method and apparatus for enabling redundant memory
US6078534A (en) * 1997-09-25 2000-06-20 Siemens Aktiengesellschaft Semiconductor memory having redundancy circuit
AU1729100A (en) 1998-11-17 2000-06-05 Lexar Media, Inc. Method and apparatus for memory control circuit
TW434556B (en) * 1999-05-11 2001-05-16 Pian Jian Self-test method for memory
US8072834B2 (en) * 2005-08-25 2011-12-06 Cypress Semiconductor Corporation Line driver circuit and method with standby mode of operation
JP5849998B2 (ja) 2013-06-25 2016-02-03 株式会社デンソー 車両用表示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3721838A (en) * 1970-12-21 1973-03-20 Ibm Repairable semiconductor circuit element and method of manufacture
JPS51128235A (en) * 1975-04-30 1976-11-09 Toshiba Corp A semi-conductor integration circuit memory
JPS5384634A (en) * 1976-12-30 1978-07-26 Fujitsu Ltd Ic memory unit device
JPS55105898A (en) * 1979-02-02 1980-08-13 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory device
US4228528B2 (en) * 1979-02-09 1992-10-06 Memory with redundant rows and columns
US4358833A (en) * 1980-09-30 1982-11-09 Intel Corporation Memory redundancy apparatus for single chip memories
US4422161A (en) * 1981-10-08 1983-12-20 Rca Corporation Memory array with redundant elements

Also Published As

Publication number Publication date
EP0058049A2 (de) 1982-08-18
JPS57130298A (en) 1982-08-12
EP0058049A3 (en) 1984-05-16
EP0058049B1 (de) 1989-04-26
US4514830A (en) 1985-04-30
JPS6135637B2 (de) 1986-08-14

Similar Documents

Publication Publication Date Title
DE3279658D1 (en) Defect-remediable semiconductor integrated circuit memory with spare substitution
DE3279429D1 (en) Semiconductor integrated memory circuit
DE3279013D1 (en) Semiconductor integrated circuit
DE3279855D1 (en) Nonvolatile semiconductor memory circuit
GB2114811B (en) Semiconductor memory
GB8309216D0 (en) Semiconductor memory
EP0166003A4 (de) Integrierte halbleiterschaltung.
GB8431762D0 (en) Semiconductor memory
EP0183232A3 (en) Semiconductor integrated circuit device with built-in memories
DE3071990D1 (en) Semiconductor memory circuit
GB2143698B (en) Semiconductor integrated memory circuit
IL64937A (en) Programmable logic array integrated circuit structure
DE3480242D1 (en) Semiconductor memory
JPS57141096A (en) Integrated semiconductor memory
GB2062391B (en) Semiconductor memory circuit
DE3272424D1 (en) Semiconductor integrated circuit
DE2964943D1 (en) Semiconductor integrated memory circuit
EP0073726A3 (en) Semi-conductor memory circuit
DE3274040D1 (en) An integrated logic circuit
DE3175419D1 (en) Semiconductor memory
EP0078222A3 (en) Integrated circuit bipolar memory cell
DE3264963D1 (en) Semiconductor integrated circuit
DE2961954D1 (en) Semiconductor integrated memory circuit
JPS57207358A (en) Circuit with semiconductor integrated circuit
DE3380678D1 (en) Semiconductor memory

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee